JP2011233977A - Piezoelectric oscillator - Google Patents

Piezoelectric oscillator Download PDF

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JP2011233977A
JP2011233977A JP2010100173A JP2010100173A JP2011233977A JP 2011233977 A JP2011233977 A JP 2011233977A JP 2010100173 A JP2010100173 A JP 2010100173A JP 2010100173 A JP2010100173 A JP 2010100173A JP 2011233977 A JP2011233977 A JP 2011233977A
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piezoelectric
base
wiring pattern
electrode
circuit element
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Toshiya Matsumoto
敏也 松本
Jun Hishikawa
淳 菱川
Yuichi Inagaki
佑一 稲垣
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Daishinku Corp
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Daishinku Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PROBLEM TO BE SOLVED: To provide reliable piezoelectric oscillator capable of coping with low height and stably connecting a circuit element.SOLUTION: A base 1 is made of ceramic, on the inside and outside of which a wiring made of a metal film is applied, and a housing region 1A of a crystal oscillator, an IC 4 mounting region 1B and a groove part 14 are formed on the base 1. An opening C1 and a piezoelectric oscillation element housing part C connected to the opening are formed in the housing region 1A. A wiring pattern electrode 13 is formed on an upper face of the mounting region 1B. A crystal oscillating element 2 (piezoelectric oscillation element) is housed in the piezoelectric oscillation element housing part C, and the housing part is hermetically sealed by a lid using a glass brazing material G as a jointing material. The IC 4, which is a circuit element, is mounted on a wiring pattern electrode 13 of the mounting region 1B.

Description

本発明は、電子機器に用いられる圧電発振器に関するものである。   The present invention relates to a piezoelectric oscillator used in an electronic device.

圧電発振器は、セラミックスからなるパッケージに、圧電振動素子と発振回路を構成する回路素子が一体的に収納された構成が汎用されている。このような圧電発振器は回路素子、圧電振動素子の順で多段に搭載する構成であり、低背化に対応できないという問題があった。このような問題に対応するために、圧電振動素子と回路素子とを並列に搭載する構成が検討されている。例えば特開2008-301196号（特許文献）に示すように、基体上に設けられた凹部空間内に圧電振動素子が、基体の集積回路搭載パッドに集積回路素子がそれぞれ搭載された構成が検討されている。   Piezoelectric oscillators have a general configuration in which a piezoelectric vibration element and a circuit element constituting an oscillation circuit are integrally housed in a ceramic package. Such a piezoelectric oscillator has a configuration in which a circuit element and a piezoelectric vibration element are mounted in order, and there is a problem that it cannot cope with a reduction in height. In order to cope with such a problem, a configuration in which a piezoelectric vibration element and a circuit element are mounted in parallel has been studied. For example, as shown in Japanese Patent Application Laid-Open No. 2008-301196 (patent document), a configuration in which a piezoelectric vibration element is mounted in a recessed space provided on a base and an integrated circuit element is mounted on an integrated circuit mounting pad of the base has been studied. ing.

特開2008-301196号 JP2008-301196

上記特許文献は基体上に高さを有する枠体が形成され、その隣に集積回路素子が形成される構成であり、集積回路素子を基体取り付ける際、隣接する枠体が機械的に干渉することがあった。また枠体の上面には金錫ろう材を介して蓋体が取り付けられているが、蓋体取り付け時に金錫ろう材が集積回路素子側へ流れ、集積回路搭載パッドにおいて短絡事故の生じる可能性があった。   In the above patent document, a frame having a height is formed on a base, and an integrated circuit element is formed next to the frame. When the integrated circuit element is attached to the base, the adjacent frame mechanically interferes. was there. In addition, a lid is attached to the upper surface of the frame via a gold-tin brazing material, but when the lid is attached, the gold-tin brazing material may flow to the integrated circuit element side, and a short circuit accident may occur in the integrated circuit mounting pad. was there.

本発明は上記問題点を解決するためになされたもので、低背化に対応し、回路素子の安定した接続が可能な信頼性の高い圧電発振器を提供することを目的としている。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a highly reliable piezoelectric oscillator which can cope with a low profile and can stably connect circuit elements.

本発明は、上記目的を達成するためになされたもので、請求項１に記載したように、開口部と当該開口部につながる圧電振動素子収納部と当該圧電振動素子収納部の開口部周囲に形成した封止部と当該封止部と略同一面に形成された配線パターン電極を有する回路素子搭載部を具備するベースと、前記圧電振動素子収納部に配置される励振電極の形成された圧電振動素子と、前記封止部とろう材により接合され前記圧電振動素子収納部を気密封止するリッドと、前記回路素子搭載部に導電接合される回路素子とからなる圧電発振器であって、前記封止部と回路素子搭載部間には遮断部が形成されていることを特徴としている。   The present invention has been made to achieve the above object, and as described in claim 1, an opening, a piezoelectric vibration element storage portion connected to the opening, and a periphery of the opening of the piezoelectric vibration element storage portion. A base having a circuit element mounting portion having a formed sealing portion and a wiring pattern electrode formed on substantially the same surface as the sealing portion, and a piezoelectric element having an excitation electrode disposed in the piezoelectric vibration element storage portion A piezoelectric oscillator comprising: a vibration element; a lid that is bonded to the sealing portion by a brazing material and hermetically seals the piezoelectric vibration element housing portion; and a circuit element that is conductively bonded to the circuit element mounting portion. A blocking part is formed between the sealing part and the circuit element mounting part.

本発明によれば、開口部と当該開口部につながる圧電振動素子収納部と当該圧電振動素子収納部の開口部周囲に形成した封止部と当該封止部と略同一面に形成された配線パターン電極を有する回路素子搭載部を具備するベースを用い、圧電振動素子収納部に圧電振動素子を搭載し、回路素子搭載部に回路素子を搭載する構成であるので、回路素子の搭載が安定して行え、また低背化に対応した圧電発振器を得ることができる。   According to the present invention, the opening, the piezoelectric vibration element storage portion connected to the opening, the sealing portion formed around the opening of the piezoelectric vibration element storage portion, and the wiring formed on substantially the same plane as the sealing portion Since a base having a circuit element mounting portion having a pattern electrode is used, a piezoelectric vibration element is mounted in the piezoelectric vibration element housing portion, and a circuit element is mounted in the circuit element mounting portion, the mounting of the circuit element is stable. In addition, a piezoelectric oscillator corresponding to low profile can be obtained.

また、当該封止部と略同一面に形成された配線パターン電極を有する回路素子搭載部の間には遮断部が形成されているので、封止部のろう材が流れたとしても遮断部により回路素子搭載部に及ぶことを抑制できる。具体的には当該ろう材が回路素子搭載部に流れたときに、当該ろう材が回路素子搭載部の一部または全部を覆い、回路素子の搭載性を悪化させたり、また特にろう材が導電材料である場合は電気的な短絡事故が懸念される。しかしながら遮断部を設けることにより、このような搭載性の悪化や短絡事故の発生を無くすことができる。   In addition, since a blocking portion is formed between the circuit element mounting portions having wiring pattern electrodes formed on substantially the same surface as the sealing portion, even if the brazing material of the sealing portion flows, It is possible to suppress reaching the circuit element mounting portion. Specifically, when the brazing material flows into the circuit element mounting portion, the brazing material covers a part or all of the circuit element mounting portion and deteriorates the mountability of the circuit element. In the case of materials, there is a concern about electrical short-circuit accidents. However, the provision of the blocking portion can eliminate such mounting deterioration and occurrence of a short circuit accident.

前記遮断部は凹状の溝部であってもよい。このような構成であれば、ろう材の余分が流れ出したとしても、凹状の溝部に入り込み、ろう材の流れが遮断される。これにより封止部のろう材が流れたとしても遮断部により回路素子搭載部に及ぶことを抑制できる。   The blocking portion may be a concave groove. With such a configuration, even if excess brazing material flows out, the brazing material enters the concave groove and the flow of the brazing material is blocked. Thereby, even if the brazing material of the sealing portion flows, it is possible to suppress the blocking portion from reaching the circuit element mounting portion.

また前記遮断部が凸状の堤防部であってもよい。このような構成であれば、ろう材の余分が流れ出したとしても、凸状の堤防部でろう材の流れが遮断される。これにより封止部のろう材が流れたとしても遮断部により回路素子搭載部に及ぶことを抑制できる。   Further, the blocking portion may be a convex levee portion. With such a configuration, even if excess brazing material flows out, the flow of the brazing material is blocked by the convex bank portion. Thereby, even if the brazing material of the sealing portion flows, it is possible to suppress the blocking portion from reaching the circuit element mounting portion.

さらに前記堤防部は配線パターン電極と一部または全部が同材料からなる構成であってもよい。このような構成であれば、配線パターン電極の形成と同時に堤防部を形成することができるので、低コストで上記各作用効果を有する圧電発振器を得ることができる。 Further, the bank portion may be configured to be partially or entirely made of the same material as the wiring pattern electrode. With such a configuration, since the bank portion can be formed simultaneously with the formation of the wiring pattern electrode, a piezoelectric oscillator having the above-described effects can be obtained at low cost.

本発明によれば、低背化に対応し、回路素子の安定した接続が可能な信頼性の高い圧電発振器を得ることができる。   According to the present invention, it is possible to obtain a highly reliable piezoelectric oscillator that can cope with a low profile and can stably connect circuit elements.

本発明による第１の実施形態を示す回路素子搭載前の圧電発振器の平面図The top view of the piezoelectric oscillator before the circuit element mounting which shows 1st Embodiment by this invention 図１において回路素子を搭載した後のＡ−Ａ断面図1 is a cross-sectional view taken along the line AA after mounting the circuit element 本発明による第２の実施形態を示す回路素子搭載前の圧電発振器の平面図The top view of the piezoelectric oscillator before the circuit element mounting which shows 2nd Embodiment by this invention 図１において回路素子を搭載した後のＢ−Ｂ断面図BB cross-sectional view after mounting circuit elements in FIG. 図３の底面図Bottom view of FIG.

以下、本発明による好ましい実施の形態について図面に基づいて説明する。
本発明による第１の実施の形態を表面実装型の水晶発振器を例にとり図１および図２とともに説明する。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
A first embodiment of the present invention will be described with reference to FIGS. 1 and 2 by taking a surface-mount crystal oscillator as an example.

表面実装型水晶発振器はベース１に水晶振動素子２が気密収納され、また発振回路用のＩＣ４が搭載され、ベース底面に複数の外部接続端子１６が形成された構成である。 The surface-mounted crystal oscillator has a structure in which a crystal resonator element 2 is hermetically housed in a base 1, an IC 4 for an oscillation circuit is mounted, and a plurality of external connection terminals 16 are formed on the bottom surface of the base.

ベース１はその内外部に金属膜からなる配線が施されたセラミックスからなり、全体として外形が直方体形状である。またベース１の四隅の側面には角が切り欠かれたキャスタレーションが形成され、当該キャスタレーション内に各々側面電極１５が形成されている。これら各側面電極１５はその一部または全部が各外部接続端子１６に接続されている。ベース１の底面（裏面）には実装基板と導電接合するための複数の外部接続端子１６が形成されている。また当該ベース１は平面で見て長辺方向の一方側には水晶振動子の収納領域１Ａが形成され、同長辺方向の他方側には発振回路用のＩＣ４の搭載領域１Ｂが形成された構成である。さらに収納領域１Ａと搭載領域１Ｂ間には遮断部である溝部１４が形成されている。   The base 1 is made of ceramics with wiring made of a metal film on the inside and outside, and the outer shape is a rectangular parallelepiped shape as a whole. Further, castellations with corners notched are formed on the four side surfaces of the base 1, and side electrodes 15 are formed in the castellations. A part or all of each side electrode 15 is connected to each external connection terminal 16. A plurality of external connection terminals 16 are formed on the bottom surface (back surface) of the base 1 for conductive bonding to the mounting substrate. In addition, the base 1 has a crystal resonator housing area 1A formed on one side in the long side direction when viewed in a plane, and a mounting area 1B for an oscillation circuit IC 4 formed on the other side in the long side direction. It is a configuration. Further, a groove portion 14 that is a blocking portion is formed between the storage region 1A and the mounting region 1B.

収納領域１Ａはベースの厚さ方向に凹部が形成され、これにより開口部Ｃ１と当該開口部につながる圧電振動素子収納部Ｃが形成されている。圧電振動素子収納部Ｃは平面で見て長方形の開口部Ｃ１を有するとともに底部１０と堤部１１を有し、また堤部１１の上面は封止部１７が周状に形成されている。これにより開口部周囲に封止部が形成された構成となっている。   In the storage area 1A, a recess is formed in the thickness direction of the base, whereby an opening C1 and a piezoelectric vibration element storage C connected to the opening are formed. The piezoelectric vibration element housing portion C has a rectangular opening C1 when viewed in plan and has a bottom portion 10 and a bank portion 11, and a sealing portion 17 is formed on the top surface of the bank portion 11 in a circumferential shape. Thereby, the sealing portion is formed around the opening.

搭載領域１Ｂは凹部の形成されない厚肉部１２を有し、その上面に配線パターン電極１３が形成されている。配線パターン電極１３は下地金属材料がタングステンからなり、タングステン上にニッケル、金の順でメッキ等の手法により積層形成された構成である。   The mounting region 1B has a thick portion 12 where no recess is formed, and a wiring pattern electrode 13 is formed on the upper surface thereof. The wiring pattern electrode 13 has a structure in which the base metal material is tungsten, and is laminated on the tungsten by a technique such as plating in the order of nickel and gold.

配線パターン電極１３には図１において丸印のドットで示す部分が回路素子との接続点１３ａとなっている。また配線パターン電極１３の一部はベースの内外に形成された配線を介して、前述の水晶振動素子２に電気的に接続され、また配線パターン電極１３の別の一部はベース１に形成された各外部接続端子１６と電気的に接続されている。 In the wiring pattern electrode 13, a portion indicated by a round dot in FIG. 1 is a connection point 13 a with a circuit element. Further, a part of the wiring pattern electrode 13 is electrically connected to the above-described crystal resonator element 2 through wiring formed inside and outside the base, and another part of the wiring pattern electrode 13 is formed on the base 1. In addition, each external connection terminal 16 is electrically connected.

ベース１は上述のとおり内外部に金属膜からなる配線が形成されているが、これら配線はセラミック積層技術を用いて形成され、これら配線により水晶振動素子２（圧電振動素子）とＩＣ４（回路素子）とが電気的に接続されている。なおベースの材料としてホウケイ酸ガラス等のガラス材を用いてもよい。   As described above, the base 1 is formed with wiring made of a metal film on the inside and outside, and these wirings are formed by using a ceramic lamination technique. ) And are electrically connected. A glass material such as borosilicate glass may be used as the base material.

遮断部である溝部１４は、収納領域１Ａと搭載領域１Ｂ間であって、ベースの短辺方向に延びる凹条部である。溝部１４の両端は曲率部が形成され、溝部形成によるベースへのクラック発生を抑制する構成となっている。   The groove portion 14 serving as a blocking portion is a concave portion extending between the storage region 1A and the mounting region 1B and extending in the short side direction of the base. Curvature portions are formed at both ends of the groove portion 14 to suppress the occurrence of cracks in the base due to the groove portion formation.

圧電振動素子収納部Ｃには水晶振動素子２（圧電振動素子）が収納され、ベースに形成された配線と電気的機械的接続されている。水晶振動素子２は板状のＡＴカット水晶振動板であり、図示していないが平面視矩形状で長辺と短辺を有している。水晶振動素子２の主面中央部には表裏に励振電極２１，２２が形成されている。当該励振電極２１，２２も平面視矩形状で水晶振動素子と相似しており、長辺と短辺を有している。表裏の各励振電極２１，２２は一方の励振電極の短辺から一方の水晶振動素子の短辺に引出電極（図示せず）が引き出されている。なお、圧電振動素子はＡＴカット水晶振動板以外に音叉型水晶振動板やその他の圧電振動板を用いてもよい。 The crystal resonator element 2 (piezoelectric resonator) is accommodated in the piezoelectric resonator accommodating portion C, and is electrically and mechanically connected to the wiring formed on the base. The crystal resonator element 2 is a plate-like AT-cut crystal resonator plate, which is not shown in the figure but has a rectangular shape in plan view and has a long side and a short side. Excitation electrodes 21 and 22 are formed on the front and back of the central portion of the main surface of the crystal resonator element 2. The excitation electrodes 21 and 22 have a rectangular shape in plan view and are similar to a crystal resonator element, and have a long side and a short side. In each of the front and back excitation electrodes 21 and 22, an extraction electrode (not shown) is drawn from the short side of one excitation electrode to the short side of one crystal vibration element. The piezoelectric vibrating element may be a tuning fork type quartz vibrating plate or other piezoelectric vibrating plate in addition to the AT cut quartz vibrating plate.

励振電極および引出電極は金属膜からなり、例えば水晶振動素子に接して、下地層としてクロム膜が形成され、当該クロム膜の上部に上層として金膜が形成された２層構成となっている。当該金属膜構成は他の金属材料であってもよく、例えば下地層にチタン膜やニッケル膜を用いてもよい。また上層に銀膜や銅膜等の材料あるいは金合金、銀合金、銅合金の各合金膜を用いてもよい。 The excitation electrode and the extraction electrode are made of a metal film. For example, the excitation electrode and the extraction electrode have a two-layer structure in which a chromium film is formed as a base layer in contact with a quartz crystal vibration element and a gold film is formed as an upper layer on the chromium film. The metal film configuration may be other metal materials, for example, a titanium film or a nickel film may be used for the underlayer. Alternatively, a material such as a silver film or a copper film, or an alloy film of a gold alloy, a silver alloy, or a copper alloy may be used for the upper layer.

上記電極形成された水晶振動素子は、圧電振動素子収納部内に形成された電極パッド（図示せず）に導電接合材Ｓを用いて短辺が片持ち保持され、前記引出電極と導電接合される。導電接合材Ｓは鉛フリーハンダや導電フィラーを含む樹脂接着剤が用いられる。 The crystal resonator element having the electrode formed thereon is cantilevered by a conductive bonding material S on an electrode pad (not shown) formed in the piezoelectric resonator element storage portion, and is conductively bonded to the lead electrode. . As the conductive bonding material S, a resin adhesive containing lead-free solder or conductive filler is used.

圧電振動素子収納部Ｃを気密封止するリッド３は平面視長方形状であり、セラミックス板からなる。リッド３の接合面の外周領域には周状の封止用のガラスろう材Ｇが事前に形成されている。当該ガラスろう材Ｇはベースに形成された封止部１７に対応して形成され、気密封止時にはガラスろう材Ｇが封止部１７に対応させて密着させ、この状態で加熱することによりガラスろう材が溶融し気密封止が行われる。気密封止後の圧電振動素子収納部Ｃは窒素ガス等の不活性ガス雰囲気や真空雰囲気に保たれる。 The lid 3 that hermetically seals the piezoelectric vibration element housing portion C has a rectangular shape in plan view and is made of a ceramic plate. A circumferential sealing glass brazing material G is formed in advance in the outer peripheral region of the joint surface of the lid 3. The said glass brazing material G is formed corresponding to the sealing part 17 formed in the base, and at the time of hermetic sealing, the glass brazing material G is brought into close contact with the sealing part 17 and heated in this state to be glass. The brazing material is melted and hermetically sealed. The piezoelectric vibration element housing part C after hermetic sealing is maintained in an inert gas atmosphere such as nitrogen gas or a vacuum atmosphere.

搭載領域１Ｂの配線パターン電極１３上には回路素子であるＩＣ４が搭載される。ＩＣは全体として直方体形状であり、前記水晶振動素子２と電気的に接続されることにより水晶発振回路を構成しており、その接合面（搭載面）に複数の接続電極４１を有している。接続電極４１は金属膜からなるが、その最上面に金からなるバンプが形成され、前記配線パターン電極１３の最上面の金とフリップチップ接合されている。なお、フリップチップ接合領域に樹脂材からなるアンダーフィルを形成しても良く、これによりベース１に対するＩＣ４の接合強度をより向上かつ安定化させることができる。 IC4 which is a circuit element is mounted on the wiring pattern electrode 13 in the mounting region 1B. The IC has a rectangular parallelepiped shape as a whole, and constitutes a crystal oscillation circuit by being electrically connected to the crystal resonator element 2, and has a plurality of connection electrodes 41 on its joint surface (mounting surface). . The connection electrode 41 is made of a metal film, and a bump made of gold is formed on the uppermost surface thereof, and is flip-chip bonded to the uppermost gold of the wiring pattern electrode 13. Note that an underfill made of a resin material may be formed in the flip chip bonding region, whereby the bonding strength of the IC 4 to the base 1 can be further improved and stabilized.

上記構成において、前述のガラスろう材Ｇが搭載領域１Ｂに流れた場合でも、遮断部である溝部１４に当該ガラスろう材Ｇが流れ込むことになり、ろう材の流れが遮断され搭載領域１Ｂの配線パターン電極にまで及ぶことはない。このように遮断部を設けることにより、搭載性の悪化や短絡事故の発生を無くすことができる。また前記アンダーフィルを形成した場合もその余分を溝部に収納させることができ、搭載性の悪化や短絡事故の発生を無くすことができる。以上の構成により、回路素子の搭載が安定して行え、また低背化に対応した圧電発振器を得ることができる。 In the above configuration, even when the above-described glass brazing material G flows into the mounting region 1B, the glass brazing material G flows into the groove portion 14 serving as a blocking portion, so that the flow of the brazing material is blocked and wiring in the mounting region 1B. It does not extend to the pattern electrode. By providing the blocking part in this way, it is possible to eliminate the deterioration of mountability and the occurrence of a short circuit accident. Further, when the underfill is formed, the excess can be accommodated in the groove portion, and the deterioration of the mountability and the occurrence of a short circuit accident can be eliminated. With the above configuration, it is possible to stably mount circuit elements, and to obtain a piezoelectric oscillator that can be reduced in height.

次に本発明による水晶発振器の製造方法について説明する。まずベース１の圧電振動素子収納部Ｃに水晶振動素子２を収納し、導電接合し気密封止を行う。具体的にはまず圧電振動素子収納部Ｃの底部の各電極パッド（図示せず）に導電接合材Ｓを塗布する。この塗布はディスペンサを用いて一定量を吐出することにより行う。その後、励振電極２１，２２の形成された水晶振動素子の支持領域を前記導電接合材Ｓ上に搭載する。この状態で導電接合材を硬化させ導電接合が行われる。 Next, a method for manufacturing a crystal oscillator according to the present invention will be described. First, the crystal resonator element 2 is accommodated in the piezoelectric resonator element accommodating portion C of the base 1, and is electrically conductively bonded and hermetically sealed. Specifically, first, a conductive bonding material S is applied to each electrode pad (not shown) at the bottom of the piezoelectric vibration element storage portion C. This application is performed by discharging a certain amount using a dispenser. Thereafter, the support region of the crystal resonator element in which the excitation electrodes 21 and 22 are formed is mounted on the conductive bonding material S. In this state, the conductive bonding material is cured and conductive bonding is performed.

その後励振電極に対してパーシャル蒸着法やイオンミリング法等により周波数調整を行い、アニール等の熱安定化処理後窒素ガス雰囲気で気密封止を行う。気密封止は窒素ガス雰囲気中においてガラスろう材Ｇの形成されたリッド部分を封止部１７に対応させた状態でベース１の開口部をリッド３で被覆し、所定の温度プロファイルに基づいて加熱冷却を行い、気密封止を行う。以上により水晶振動素子が窒素ガス雰囲気で気密封止される。なお、この時製造バラツキ等により余分のガラスろう材が生じた場合は、前述の溝部に流れ込み配線パターン電極には及ばない。 Thereafter, the excitation electrode is subjected to frequency adjustment by a partial vapor deposition method, an ion milling method, or the like, and after heat stabilization treatment such as annealing, hermetic sealing is performed in a nitrogen gas atmosphere. In the hermetic sealing, an opening of the base 1 is covered with the lid 3 in a state where the lid portion where the glass brazing material G is formed corresponds to the sealing portion 17 in a nitrogen gas atmosphere, and heating is performed based on a predetermined temperature profile. Cool and hermetically seal. As described above, the quartz resonator element is hermetically sealed in a nitrogen gas atmosphere. At this time, if an extra glass brazing material is produced due to manufacturing variation or the like, it flows into the aforementioned groove and does not reach the wiring pattern electrode.

次に搭載領域１Ｂの配線パターン電極上にＩＣ４を搭載し、電気的機械的接続を行う。まず、配線パターン電極１３の表面にプラズマエッチングを行い、電極膜の酸化物層や異物を除去する。その後ＩＣ４の接続電極のバンプが前記配線パターン電極１３の回路素子との接続点１３ａに対応接触するようにＩＣを配線パターン電極上に搭載し、超音波を印加することによりフリップチップ接合を行う。その後必要に応じてフリップチップ接合領域に流動性のある樹脂材を供給し硬化させ、アンダーフィルを形成してもよい。 Next, the IC 4 is mounted on the wiring pattern electrode in the mounting region 1B, and electrical and mechanical connection is performed. First, plasma etching is performed on the surface of the wiring pattern electrode 13 to remove an oxide layer and foreign matter from the electrode film. Thereafter, the IC is mounted on the wiring pattern electrode so that the bump of the connection electrode of IC4 is in contact with the connection point 13a of the wiring pattern electrode 13 with the circuit element, and flip chip bonding is performed by applying ultrasonic waves. Thereafter, if necessary, a fluid resin material may be supplied to the flip chip bonding region and cured to form an underfill.

以上のように本発明においては水晶振動素子（圧電振動素子）とＩＣ（回路素子）を別の構成でベースに搭載することができるので、製造工程を簡便化することができる。また水晶振動素子をＩＣと分けて搭載しているので、ガスの問題等相互の悪影響を無くすことができる。   As described above, in the present invention, since the crystal resonator element (piezoelectric resonator element) and the IC (circuit element) can be mounted on the base with different configurations, the manufacturing process can be simplified. Further, since the quartz resonator element is mounted separately from the IC, it is possible to eliminate the mutual adverse effects such as gas problems.

本発明による第２の実施形態について、図３乃至図５とともに説明する。基本的な構成は第１の実施の形態に類似しているが、ろう材の構成と遮断部の形成されたベースの構成が異なっている。   A second embodiment according to the present invention will be described with reference to FIGS. The basic configuration is similar to that of the first embodiment, but the configuration of the brazing material and the configuration of the base on which the blocking portion is formed are different.

ベース５はその内外部に金属膜からなる配線が施されたセラミックスからなり、全体として外形が直方体形状である。またベース５の四隅の側面には角が切り欠かれたキャスタレーションが形成され、当該キャスタレーション内に各々側面電極５５が形成されている。これら各側面電極５５は平面視長方形状の外部接続端子５６に接続されている。   The base 5 is made of ceramics with wiring made of a metal film on the inside and outside thereof, and the outer shape as a whole is a rectangular parallelepiped shape. Further, castellations with cut-out corners are formed on the side surfaces of the four corners of the base 5, and side electrodes 55 are formed in the castellations. Each side electrode 55 is connected to an external connection terminal 56 having a rectangular shape in plan view.

図５に示すように、ベース５の底面（裏面）には実装基板と導電接合するための４つの外部接続端子５６が、それぞれの角部に形成されている。またベース底面の長辺方向の中央部分に並んで一対の測定電極５８が形成されている。当該測定電極５８は水晶振動素子に形成された一対の励振電極２１，２２に各々電気的に接続され、当該測定電極５８から水晶振動素子２の特性を測定することができる。 As shown in FIG. 5, four external connection terminals 56 for conductive bonding to the mounting substrate are formed at the corners of the bottom surface (back surface) of the base 5. A pair of measurement electrodes 58 are formed side by side in the center of the base bottom surface in the long side direction. The measurement electrode 58 is electrically connected to a pair of excitation electrodes 21 and 22 formed on the crystal resonator element, and the characteristics of the crystal resonator element 2 can be measured from the measurement electrode 58.

さらにベースの各短辺の側面中央部分には一対の書き込み電極５９が形成されている。当該書き込み電極５９は後述のＩＣ４に形成された接続電極の一部と電気的に接続され、当該書き込み電極５９からＩＣ４に対してデータ書き込みをすることが可能な構成となっている。 Further, a pair of write electrodes 59 is formed at the center of the side surface of each short side of the base. The write electrode 59 is electrically connected to a part of connection electrodes formed on the IC 4 to be described later, so that data can be written from the write electrode 59 to the IC 4.

また当該ベース５は平面で見て長辺方向の一方側には水晶振動子の収納領域５Ａが形成され、同長辺方向の他方側には発振回路用のＩＣ４の搭載領域５Ｂが形成された構成である。 Further, the base 5 is formed with a crystal resonator storage area 5A on one side in the long side direction when viewed in a plane, and a mounting area 5B for the oscillation circuit IC 4 on the other side in the long side direction. It is a configuration.

収納領域５Ａはベースの厚さ方向に凹部が形成され、これにより開口部Ｃ１と当該開口部につながる圧電振動素子収納部Ｃが形成される。圧電振動素子収納部Ｃは平面で見て長方形の開口部Ｃ１を有するとともに底部５０と堤部５１を有し、また堤部５１の上面は封止部５７が周状に形成されている。これにより開口部周囲に封止部が形成された構成となっている。   In the storage area 5A, a recess is formed in the thickness direction of the base, whereby an opening C1 and a piezoelectric vibration element storage C connected to the opening are formed. The piezoelectric vibration element housing part C has a rectangular opening C1 when viewed in plan and has a bottom part 50 and a bank part 51. On the top surface of the bank part 51, a sealing part 57 is formed in a circumferential shape. Thereby, the sealing portion is formed around the opening.

搭載領域５Ｂは凹部の形成されない厚肉部５２を有し、その上面に配線パターン電極５３が形成されている。配線パターン電極５３は下地金属材料がタングステンからなり、タングステン上にニッケル、金の順でメッキ等の手法により積層形成された構成である。   The mounting region 5B has a thick portion 52 where no recess is formed, and a wiring pattern electrode 53 is formed on the upper surface thereof. The wiring pattern electrode 53 has a configuration in which the base metal material is tungsten and is laminated on the tungsten by a technique such as plating in the order of nickel and gold.

配線パターン電極５３には図１において丸印のドットで示す部分が回路素子との接続点５３ａとなっている。また配線パターン電極５３の一部はベースの内外に形成された配線を介して、前述の水晶振動素子に電気的に接続され、また配線パターン電極５３の別の一部はベースに形成された各外部接続端子５６と電気的に接続されている。 In the wiring pattern electrode 53, a portion indicated by a round dot in FIG. 1 is a connection point 53a with a circuit element. In addition, a part of the wiring pattern electrode 53 is electrically connected to the above-described crystal resonator element through a wiring formed inside and outside the base, and another part of the wiring pattern electrode 53 is formed on the base. The external connection terminal 56 is electrically connected.

ベース５は上述のとおり内外部に金属膜からなる配線が形成されているが、これら配線はセラミック積層技術を用いて形成され、これら配線により水晶振動素子２（圧電振動素子）とＩＣ４（回路素子）とが電気的に接続されている。なおベースの材料としてホウケイ酸ガラス等のガラス材を用いてもよい。   As described above, the base 5 is formed with wiring made of a metal film on the inside and outside. These wirings are formed by using a ceramic lamination technique. ) And are electrically connected. A glass material such as borosilicate glass may be used as the base material.

遮断部である堤防部は、配線パターン電極５３を囲むように形成された金属からなる凸条構成である。具体的には収納領域５Ａと搭載領域５Ｂ間であって、ベースの短辺方向に延びる堤防部５４１と長辺に沿った堤防部５４２，５４３と短辺に沿った堤防部５４４，５４５からなる。これら堤防部は前記配線パターン電極と同じ金属材料構成からなり、配線パターン電極形成５３と同時に堤防部５４も形成することができ、安価な圧電発振器の実現に寄与できる。なお、これら配線パターンをアース接続してもよい。   The bank portion which is a blocking portion has a ridge structure made of metal formed so as to surround the wiring pattern electrode 53. Specifically, it is between the storage area 5A and the mounting area 5B, and includes a dike part 541 extending in the short side direction of the base, dike parts 542 and 543 along the long side, and dike parts 544 and 545 along the short side. . These bank portions are made of the same metal material as the wiring pattern electrodes, and the bank portions 54 can be formed simultaneously with the wiring pattern electrode formation 53, which contributes to the realization of an inexpensive piezoelectric oscillator. These wiring patterns may be grounded.

なお、堤防部は堤防部５４１のみで遮断部の役割を果たすが、本実施の形態のように配線パターン電極を囲む構成により、後述のアンダーフィルの流出を防止する効果を得ることができる。また堤防部をアース接続することにより、圧電発振器の特性の安定化が期待できる。   The embankment portion serves as a blocking portion only by the embankment portion 541. However, an effect of preventing an underfill outflow described later can be obtained by the configuration surrounding the wiring pattern electrode as in the present embodiment. Also, stabilization of the characteristics of the piezoelectric oscillator can be expected by connecting the dike part to the ground.

圧電振動素子収納部Ｃには水晶振動素子が収納され、ベースに形成された配線と電気的機械的接続されている。水晶振動素子２は板状のＡＴカット水晶振動板であり、図示していないが平面視矩形状で長辺と短辺を有している。水晶振動素子２の主面中央部には表裏に励振電極２１，２２が形成されている。当該励振電極２１，２２も平面視矩形状で水晶振動素子と相似しており、長辺と短辺を有している。表裏の各励振電極２１，２２は一方の励振電極の短辺から一方の水晶振動素子の短辺に引出電極（図示せず）が引き出されている。なお、圧電振動素子はＡＴカット水晶振動板以外に音叉型水晶振動板やその他の圧電振動板を用いてもよい。 The piezoelectric vibration element storage portion C stores a crystal vibration element and is electrically and mechanically connected to a wiring formed on the base. The crystal resonator element 2 is a plate-like AT-cut crystal resonator plate, which is not shown in the figure but has a rectangular shape in plan view and has a long side and a short side. Excitation electrodes 21 and 22 are formed on the front and back of the central portion of the main surface of the crystal resonator element 2. The excitation electrodes 21 and 22 have a rectangular shape in plan view and are similar to a crystal resonator element, and have a long side and a short side. In each of the front and back excitation electrodes 21 and 22, an extraction electrode (not shown) is drawn from the short side of one excitation electrode to the short side of one crystal vibration element. The piezoelectric vibrating element may be a tuning fork type quartz vibrating plate or other piezoelectric vibrating plate in addition to the AT cut quartz vibrating plate.

励振電極および引出電極は金属膜からなり、例えば水晶振動素子２に接して、下地層としてクロム膜が形成され、当該クロム膜の上部に上層として金膜が形成された２層構成となっている。当該金属膜構成は他の金属材料であってもよく、例えば下地層にチタン膜やニッケル膜を用いてもよい。また上層に銀膜や銅膜等の材料あるいは金合金、銀合金、銅合金の各合金膜を用いてもよい。 The excitation electrode and the extraction electrode are made of a metal film, for example, a two-layer structure in which a chromium film is formed as a base layer in contact with the crystal vibration element 2 and a gold film is formed as an upper layer on the chromium film. . The metal film configuration may be other metal materials, for example, a titanium film or a nickel film may be used for the underlayer. Alternatively, a material such as a silver film or a copper film, or an alloy film of a gold alloy, a silver alloy, or a copper alloy may be used for the upper layer.

上記電極形成された水晶振動素子２は、前記電極パッド１２，１３に導電接合材Ｓを用いて短辺が片持ち保持され、前記引出電極と導電接合される。導電接合材Ｓは鉛フリーハンダや導電フィラーを含む樹脂接着剤が用いられる。 The crystal resonator element 2 with the electrodes formed thereon is cantilevered with the electrode pads 12 and 13 using a conductive bonding material S and is conductively bonded to the lead electrodes. As the conductive bonding material S, a resin adhesive containing lead-free solder or conductive filler is used.

圧電振動素子収納部Ｃを気密封止するリッド６は平面視長方形状であり、多層の金属材料からなる構成で、コア部の表面に金属ろう材Ｍが形成された構成である。コア部はコバール材（鉄ニッケルコバルト合金）からなり、当該コア部のベース５との接合面にはリッドの外周近傍に沿って周状の金属ろう材Ｍが形成されている。なおコア部の金属ろう材Ｍを形成した反対面にニッケル層を形成してもよい。またコア部はコバール材にニッケルメッキされた構成や、コバール材とニッケルを圧延にてクラッド化した構成や、コバール材をニッケルで挟み込んだ状態で圧延にてクラッド化した構成であってもよい。またリッドのコア部を金属ではなくセラミックス板やガラス板で構成してもよい。この場合、セラミックス板またはガラス板のベースとの接合面側に金属ろう材Ｍが形成される。 The lid 6 that hermetically seals the piezoelectric vibration element housing portion C has a rectangular shape in plan view, and is configured by a multilayer metal material, and a metal brazing material M is formed on the surface of the core portion. The core portion is made of Kovar material (iron-nickel-cobalt alloy), and a circumferential metal brazing material M is formed along the vicinity of the outer periphery of the lid on the joint surface with the base 5 of the core portion. In addition, you may form a nickel layer in the opposite surface in which the metal brazing material M of the core part was formed. The core portion may have a configuration in which the Kovar material is nickel-plated, a configuration in which the Kovar material and nickel are clad by rolling, or a configuration in which the Kovar material is clad by rolling with the nickel sandwiched between nickel. Moreover, you may comprise the core part of a lid with a ceramic plate and a glass plate instead of a metal. In this case, the metal brazing material M is formed on the bonding surface side with the base of the ceramic plate or the glass plate.

金属ろう材Ｍは金錫合金ろうや錫銅合金ろうからなる。いずれの合金も共晶合金や共晶合金に近い組成比率が用いられる。当該金属ろう材Ｍはベースに形成された封止部５７に対応して形成され、気密封止時には金属ろう材Ｍが封止部５７に対応させて密着させ加熱により金属ろう材Ｍが溶融し気密封止が行われる。気密封止後の圧電振動素子収納部Ｃは窒素ガス等の不活性ガス雰囲気や真空雰囲気に保たれる。本実施の形態では真空雰囲気に保たれる。 The metal brazing material M is made of gold-tin alloy brazing or tin-copper alloy brazing. In any alloy, a composition ratio close to that of a eutectic alloy or a eutectic alloy is used. The metal brazing material M is formed corresponding to the sealing portion 57 formed on the base, and the metal brazing material M is brought into close contact with the sealing portion 57 at the time of hermetic sealing, and the metal brazing material M is melted by heating. Airtight sealing is performed. The piezoelectric vibration element housing part C after hermetic sealing is maintained in an inert gas atmosphere such as nitrogen gas or a vacuum atmosphere. In this embodiment mode, a vacuum atmosphere is maintained.

搭載領域５Ｂの配線パターン電極５３上には回路素子であるＩＣ４が搭載される。ＩＣ４は前記水晶振動素子２と電気的機械的に接続されることにより水晶発振回路を構成しており、その接合面に複数の接続電極４１を有している。接続電極４１は金属膜からなるが、その最上面に金からなるバンプが形成され、前記配線パターン電極５３の最上面の金とフリップチップ接合されている。なお、フリップチップ接合領域に樹脂材からなるアンダーフィルを形成しても良いし、ベース５に対するＩＣ４の接合強度を向上および安定化させても良い。 IC4 which is a circuit element is mounted on the wiring pattern electrode 53 in the mounting region 5B. The IC 4 constitutes a crystal oscillation circuit by being electrically and mechanically connected to the crystal resonator element 2 and has a plurality of connection electrodes 41 on its joint surface. The connection electrode 41 is made of a metal film, and a bump made of gold is formed on the uppermost surface thereof, and is flip-chip bonded to the uppermost gold of the wiring pattern electrode 53. An underfill made of a resin material may be formed in the flip chip bonding region, and the bonding strength of the IC 4 to the base 5 may be improved and stabilized.

上記構成において、前述の金属ろう材Ｍが搭載領域５Ｂ側に流れた場合でも、遮断部である堤防部により当該金属ろう材Ｍの流れが阻止され、搭載領域５Ｂにまで流れることはなくなる。特に本実施の形態においては遮断部である堤防部は、配線パターン電極５３を囲むように形成された凸条構成であるため、配線パターン電極への金属ろう材の流入を多方面から防止することができる。このように遮断部を設けることにより、搭載性の悪化や短絡事故の発生を無くすことができる。また前記アンダーフィルを形成した場合も堤防部による阻止効果により、搭載性の悪化や短絡事故の発生を無くすことができる。以上の構成により、回路素子の搭載が安定して行え、また低背化に対応した圧電発振器を得ることができる。 In the above configuration, even when the above-described metal brazing material M flows to the mounting region 5B side, the flow of the metal brazing material M is blocked by the bank portion which is a blocking portion and does not flow to the mounting region 5B. In particular, in the present embodiment, the bank portion, which is a blocking portion, has a ridge structure that is formed so as to surround the wiring pattern electrode 53, and therefore prevents the metal brazing material from flowing into the wiring pattern electrode from various directions. Can do. By providing the blocking part in this way, it is possible to eliminate the deterioration of mountability and the occurrence of a short circuit accident. In addition, even when the underfill is formed, it is possible to eliminate the deterioration of the mountability and the occurrence of a short-circuit accident due to the blocking effect by the bank. With the above configuration, it is possible to stably mount circuit elements, and to obtain a piezoelectric oscillator that can be reduced in height.

次に本発明による水晶発振器の製造方法について説明する。まずベース５の圧電振動素子収納部Ｃに水晶振動素子２を収納し、導電接合し気密封止を行う。具体的にはまず圧電振動素子収納部Ｃの底部の各電極パッド（図示せず）に導電接合材Ｓを塗布する。この塗布はディスペンサを用いて一定量を吐出することにより行う。その後、励振電極２１，２２の形成された水晶振動素子の支持領域を前記導電接合材Ｓ上に搭載する。この状態で導電接合材を硬化させ導電接合が行われる。 Next, a method for manufacturing a crystal oscillator according to the present invention will be described. First, the crystal resonator element 2 is accommodated in the piezoelectric resonator element accommodating portion C of the base 5, and conductively joined to perform airtight sealing. Specifically, first, a conductive bonding material S is applied to each electrode pad (not shown) at the bottom of the piezoelectric vibration element storage portion C. This application is performed by discharging a certain amount using a dispenser. Thereafter, the support region of the crystal resonator element in which the excitation electrodes 21 and 22 are formed is mounted on the conductive bonding material S. In this state, the conductive bonding material is cured and conductive bonding is performed.

その後励振電極に対してパーシャル蒸着法やイオンミリング法等により周波数調整を行い、アニール等の熱安定化処理後真空雰囲気で気密封止を行う。気密封止は真空雰囲気中において金属ろう材Ｍの形成されたリッド部分を封止部５７に対応させた状態でベースの開口部をリッドで被覆し、所定の温度プロファイルに基づいて加熱冷却を行い、気密封止を行う。以上により水晶振動素子が窒素ガス雰囲気で気密封止される。なお、この時製造バラツキ等により余分のガラスろう材が生じた場合は、前述の堤防部により流れが阻止され、配線パターン電極には及ばない。 Thereafter, the excitation electrode is subjected to frequency adjustment by a partial vapor deposition method, an ion milling method, or the like, and after heat stabilization treatment such as annealing, hermetically sealed in a vacuum atmosphere. In the hermetic sealing, the opening of the base is covered with a lid in a vacuum atmosphere with the lid portion where the metal brazing material M is formed corresponding to the sealing portion 57, and heating and cooling are performed based on a predetermined temperature profile. , Perform hermetic sealing. As described above, the quartz resonator element is hermetically sealed in a nitrogen gas atmosphere. At this time, if an extra glass brazing material is generated due to manufacturing variation or the like, the flow is blocked by the above-mentioned bank portion and does not reach the wiring pattern electrode.

次に搭載領域１Ｂの配線パターン電極上にＩＣ４を搭載し、電気的機械的接続を行う。まず、配線パターン電極１３の表面にプラズマエッチングを行い、電極膜の酸化物層や異物を除去する。その後ＩＣ４の接続電極のバンプが前記配線パターン電極１３の回路素子との接続点１３ａに対応接触するようにＩＣを配線パターン電極上に搭載し、超音波を印加することによりフリップチップ接合を行う。その後必要に応じてフリップチップ接合領域に流動性のある樹脂材を供給し硬化させ、アンダーフィルを形成してもよい。 Next, the IC 4 is mounted on the wiring pattern electrode in the mounting region 1B, and electrical and mechanical connection is performed. First, plasma etching is performed on the surface of the wiring pattern electrode 13 to remove an oxide layer and foreign matter from the electrode film. Thereafter, the IC is mounted on the wiring pattern electrode so that the bump of the connection electrode of IC4 is in contact with the connection point 13a of the wiring pattern electrode 13 with the circuit element, and flip chip bonding is performed by applying ultrasonic waves. Thereafter, if necessary, a fluid resin material may be supplied to the flip chip bonding region and cured to form an underfill.

以上のように本発明においては水晶振動素子（圧電振動素子）とＩＣ（回路素子）を別の構成でベースに搭載することができるので、製造工程を簡便化することができる。また水晶振動素子をＩＣと分けて搭載しているので、ガスの問題等相互の悪影響を無くすことができる。 As described above, in the present invention, since the crystal resonator element (piezoelectric resonator element) and the IC (circuit element) can be mounted on the base with different configurations, the manufacturing process can be simplified. Further, since the quartz resonator element is mounted separately from the IC, it is possible to eliminate the mutual adverse effects such as gas problems.

その後、測定電極５８に測定装置のコンタクトプローブを当接させ、気密封止された水晶振動素子の特性を測定する。当該測定結果に基づいてＩＣの特性を決定し、必要なデータを書き込み電極５９を介して書き込み、所定の特性の水晶発振器を得る。このような水晶振動素子の特性を測定して、その結果に基づき発振回路を構成するＩＣに対してデータ書き込みを行う構成は温度補償型水晶発振器等の場合に特に有効な構成となる。 Thereafter, the contact probe of the measuring device is brought into contact with the measuring electrode 58, and the characteristics of the hermetically sealed quartz crystal vibrating element are measured. IC characteristics are determined based on the measurement result, and necessary data is written through the write electrode 59 to obtain a crystal oscillator having predetermined characteristics. A configuration in which characteristics of such a crystal resonator element are measured and data is written to an IC constituting the oscillation circuit based on the result is particularly effective in the case of a temperature compensated crystal oscillator or the like.

なお、上記第２の実施の形態において、堤防部に金属材料を用いたが、これに限定されるものではなく、例えばアルミナ等のセラミックスや樹脂材を用いてもよい。樹脂材はエポキシ系樹脂やシリコーン系樹脂等の比較的耐熱性に優れた樹脂材を用いると、圧電振動素子の気密封止時の加熱に対して耐性があり好ましい。   In the second embodiment, the metal material is used for the bank portion. However, the present invention is not limited to this. For example, ceramics such as alumina or a resin material may be used. It is preferable to use a resin material having relatively high heat resistance, such as an epoxy resin or a silicone resin, because the resin material is resistant to heating during hermetic sealing of the piezoelectric vibration element.

なお、本発明は、その精神や主旨または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

圧電発振器の量産に適用できる。   It can be applied to mass production of piezoelectric oscillators.

１、５ ベース
１０ 底部
１１ 堤部
１４ 溝部（遮断部）
２ 水晶振動素子（圧電振動素子）
３、６ リッド
４ ＩＣ（回路素子） 1, 5 Base 10 Bottom 11 Embankment 14 Groove (blocking part)
2 Quartz vibrating element (piezoelectric vibrating element)
3, 6 Lid 4 IC (circuit element)

Claims (4)

開口部と当該開口部につながる圧電振動素子収納部と当該圧電振動素子収納部の開口部周囲に形成した封止部と当該封止部と略同一面に形成された配線パターンを有する回路素子搭載部を具備するベースと、前記圧電振動素子収納部に配置される励振電極の形成された圧電振動素子と、前記封止部とろう材により接合され前記圧電振動素子収納部を気密封止するリッドと、前記回路素子搭載部に導電接合される回路素子とからなる圧電発振器であって、
前記封止部と回路素子搭載部間には遮断部が形成されていることを特徴とする圧電発振器。 Circuit element mounting having an opening, a piezoelectric vibration element storage portion connected to the opening, a sealing portion formed around the opening of the piezoelectric vibration element storage portion, and a wiring pattern formed on substantially the same plane as the sealing portion A base provided with a portion, a piezoelectric vibration element having an excitation electrode disposed in the piezoelectric vibration element housing portion, and a lid that is joined to the sealing portion by a brazing material and hermetically seals the piezoelectric vibration element housing portion And a piezoelectric oscillator comprising a circuit element that is conductively bonded to the circuit element mounting portion,
A piezoelectric oscillator, wherein a blocking portion is formed between the sealing portion and the circuit element mounting portion. 前記遮断部が凹状の溝部であることを特徴とする請求項１記載の圧電発振器。 The piezoelectric oscillator according to claim 1, wherein the blocking portion is a concave groove. 前記遮断部が凸状の堤防部であることを特徴とする請求項１または２に記載の圧電発振器。 The piezoelectric oscillator according to claim 1, wherein the blocking portion is a convex bank portion. 前記堤防部は配線パターンと一部または全部が同材料からなる請求項３記載の圧電発振器。 4. The piezoelectric oscillator according to claim 3, wherein the bank portion is partially or entirely made of the same material as the wiring pattern.
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