JP2011222809A - Method of detecting relative position of substrates and method of manufacturing laminated device - Google Patents

Method of detecting relative position of substrates and method of manufacturing laminated device Download PDF

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JP2011222809A
JP2011222809A JP2010091372A JP2010091372A JP2011222809A JP 2011222809 A JP2011222809 A JP 2011222809A JP 2010091372 A JP2010091372 A JP 2010091372A JP 2010091372 A JP2010091372 A JP 2010091372A JP 2011222809 A JP2011222809 A JP 2011222809A
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substrate
conductive region
relative position
conductive
electrical characteristics
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JP2011222809A5 (en
JP5549339B2 (en
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Motoo Koyama
元夫 小山
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

PROBLEM TO BE SOLVED: To accurately detect a relative position of substrates.SOLUTION: A method of detecting a relative position of substrates is provided that comprises: a step of bringing one face of a first substrate, on which first conductive regions are formed at a first interval, and one face of a second substrate, on which second conductive regions are formed at a second interval different from the first interval, close to each other; a step of measuring electric properties of combinations of the first conductive regions and the second conductive regions while the one face of the first substrate and the one face of the second substrate are in proximity to each other; and a step of detecting the relative position between the first substrate and the second substrate on the basis of a difference in electric properties between the combinations of the first conductive regions and the second conductive regions.

Description

本発明は、基板相対位置検出方法及び積層デバイス製造方法に関する。   The present invention relates to a substrate relative position detection method and a laminated device manufacturing method.

半導体装置の実装密度を高める目的で、電子回路を形成した基板を積層した積層型の半導体装置が注目されている。複数の基板を積層する場合に、基板同士の位置を合わせるアラインメント装置がある（特許文献１を参照）。   For the purpose of increasing the mounting density of semiconductor devices, a stacked type semiconductor device in which substrates on which electronic circuits are formed has been attracting attention. When laminating a plurality of substrates, there is an alignment device that aligns the positions of the substrates (see Patent Document 1).

特開２００９−２３１６７１号公報JP 2009-231671 A

しかし、アライメント装置により、２枚の基板を向かい合わせた状態では、重ね合わせ面が視認できない。よって、重ね合わせた状態における基板間のずれを確認することが難しい。   However, when the two substrates are opposed to each other by the alignment device, the superimposed surface cannot be visually recognized. Therefore, it is difficult to confirm the deviation between the substrates in the superimposed state.

上記課題を解決するために、本発明の第１の態様においては、一の面側に第１導電領域が第１周期で複数形成された第１基板の一の面と、一の面側に第２導電領域を第１周期とは異なる第２周期で複数形成された第２基板の一の面と近接させるステップと、第１基板の一の面と第２基板の一の面とを近接させた状態で、第１導電領域と第２導電領域との複数の組み合わせにおける電気的特性を測定するステップと、第１導電領域と第２導電領域との複数の組み合わせ間の電気的特性の差に基づいて、第１基板と第２基板との相対位置を検出するステップとを備える基板相対位置算出方法が提供される。   In order to solve the above-described problem, in the first aspect of the present invention, one surface of a first substrate in which a plurality of first conductive regions are formed on one surface side at a first period, and one surface side The step of bringing the second conductive region into proximity with one surface of the second substrate formed in a plurality of second periods different from the first period, and bringing one surface of the first substrate and one surface of the second substrate into proximity And measuring the electrical characteristics of the plurality of combinations of the first conductive region and the second conductive region, and the difference in electrical characteristics between the plurality of combinations of the first conductive region and the second conductive region. Based on the above, there is provided a substrate relative position calculation method comprising a step of detecting a relative position between a first substrate and a second substrate.

なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。   It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

基板貼り合せ装置１００の全体構造を模式的に示す平面図である。1 is a plan view schematically showing the overall structure of a substrate bonding apparatus 100. FIG. ステージ装置１４０の構造を概略に示す正面図である。It is a front view which shows the structure of the stage apparatus 140 roughly. 第１基板と第２基板を重ね合わせた状態を概念的に示す平面図である。It is a top view which shows notionally the state which piled up the 1st board | substrate and the 2nd board | substrate. 図３において２点鎖線で囲んだ部分の拡大図である。FIG. 4 is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 3. 第１基板１２２と第２基板１２３とが位置ずれなく重ね合わされた状態を示す。The state which the 1st board | substrate 122 and the 2nd board | substrate 123 were piled up without position shift is shown. 第１基板１２２と第２基板１２３とが位置ずれして重ね合わされた状態を示す。The state where the 1st board | substrate 122 and the 2nd board | substrate 123 overlapped and shifted is shown. 基板相対位置検出方法の一実施形態のフローチャートである。It is a flowchart of one Embodiment of the board | substrate relative position detection method. 制御部１４８が第２導電領域４０４等の電気的な特性を検出する他の例である。This is another example in which the control unit 148 detects electrical characteristics of the second conductive region 404 and the like. 制御部１４８が第２導電領域４０４等の電気的な特性を検出するさらに他の例である。This is still another example in which the control unit 148 detects electrical characteristics of the second conductive region 404 and the like. 第１導電領域を基板の深くまで形成した実施形態を示す。An embodiment in which the first conductive region is formed deep into the substrate is shown. 第１基板を薄化して第１導電領域を裏面に露出させた状態を示す。The state which thinned the 1st board | substrate and exposed the 1st electroconductive area | region on the back surface is shown. 積層デバイスを製造する方法の概略を示す。The outline of the method of manufacturing a laminated device is shown.

以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。   Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

図１は、基板貼り合せ装置１００の全体構造を模式的に示す平面図である。基板貼り合せ装置１００は、筐体１０２と、常温部１０４と、高温部１０６と、基板カセット１１２、１１４、１１６とを備える。常温部１０４および高温部１０６は、共通の筐体１０２の内部に設けられる。   FIG. 1 is a plan view schematically showing the overall structure of the substrate bonding apparatus 100. The substrate bonding apparatus 100 includes a housing 102, a room temperature unit 104, a high temperature unit 106, and substrate cassettes 112, 114, and 116. The normal temperature part 104 and the high temperature part 106 are provided in the common housing 102.

基板カセット１１２、１１４、１１６は、筐体１０２の外部に、筐体１０２に対して脱着自在に装着される。基板カセット１１２、１１４、１１６は、基板貼り合せ装置１００において接合される第１基板１２２および第２基板１２３を収容する。これにより、複数の第１基板１２２および第２基板１２３を一括して基板貼り合せ装置１００に装填できる。また、基板貼り合せ装置１００において接合された第１基板１２２および第２基板１２３を一括して回収できる。   The substrate cassettes 112, 114, and 116 are detachably attached to the housing 102 outside the housing 102. The substrate cassettes 112, 114, and 116 accommodate the first substrate 122 and the second substrate 123 that are bonded in the substrate bonding apparatus 100. Accordingly, the plurality of first substrates 122 and second substrates 123 can be loaded into the substrate bonding apparatus 100 at a time. In addition, the first substrate 122 and the second substrate 123 bonded in the substrate bonding apparatus 100 can be collected at a time.

常温部１０４は、筐体１０２の内側にそれぞれ配された、プリアライナ１２６、ステージ装置１４０、基板ホルダラック１２８および基板取り外し部１３０と、一対のロボットアーム１３２、１３４とを備える。筐体１０２の内部は、基板貼り合せ装置１００が設置された環境の室温と略同じ温度が維持されるように温度管理される。   The room temperature unit 104 includes a pre-aligner 126, a stage device 140, a substrate holder rack 128, a substrate removal unit 130, and a pair of robot arms 132 and 134, which are disposed inside the housing 102. The inside of the housing 102 is temperature-controlled so as to maintain substantially the same temperature as the room temperature of the environment where the substrate bonding apparatus 100 is installed.

プリアライナ１２６は、高精度であるが故に狭いステージ装置１４０の調整範囲に第１基板１２２または第２基板１２３の位置が収まるように、個々の第１基板１２２または第２基板１２３の位置を仮合わせする。これにより、ステージ装置１４０における位置決めを確実にすることができる。   Since the pre-aligner 126 is highly accurate, the position of each first substrate 122 or second substrate 123 is temporarily aligned so that the position of the first substrate 122 or the second substrate 123 is within the adjustment range of the narrow stage device 140. To do. Thereby, the positioning in the stage apparatus 140 can be ensured.

基板ホルダラック１２８は、複数の上基板ホルダ１２４および複数の下基板ホルダ１２５を収容して待機させる。上基板ホルダ１２４による第１基板１２２の保持又は下基板ホルダ１２５による第２基板１２３の保持は、例えば静電吸着による。   The substrate holder rack 128 accommodates and waits for a plurality of upper substrate holders 124 and a plurality of lower substrate holders 125. The holding of the first substrate 122 by the upper substrate holder 124 or the holding of the second substrate 123 by the lower substrate holder 125 is, for example, by electrostatic adsorption.

ステージ装置１４０は、貼り合せの対象である第１基板１２２と第２基板１２３における接合すべき電極同士の位置を合わせて、重ね合わせる。ステージ装置１４０は、第１ステージ１４１と、第２ステージ１４２と、制御部１４８とを含む。また、ステージ装置１４０を包囲して断熱壁１４５およびシャッタ１４６が設けられる。断熱壁１４５およびシャッタ１４６に包囲された空間は空調機等に連通して温度管理され、ステージ装置１４０における位置合わせ精度を維持する。   The stage device 140 aligns the positions of the electrodes to be bonded on the first substrate 122 and the second substrate 123 to be bonded and superimposes them. Stage device 140 includes a first stage 141, a second stage 142, and a control unit 148. Further, a heat insulating wall 145 and a shutter 146 are provided so as to surround the stage device 140. The space surrounded by the heat insulating wall 145 and the shutter 146 is communicated with an air conditioner or the like, and the temperature is controlled, so that the alignment accuracy in the stage device 140 is maintained.

基板取り外し部１３０は、高温部１０６の加圧部２４０から搬出された上基板ホルダ１２４および下基板ホルダ１２５に挟まれて貼り合わされた第１基板１２２および第２基板１２３（以下、積層基板と称することがある）を取り出す。基板ホルダから取り出された積層基板は、ロボットアーム１３４、１３２および第２ステージ１４２により基板カセット１１２、１１４、１１６のうちのひとつに戻されて収容される。積層基板を取り出された上基板ホルダ１２４および下基板ホルダ１２５は、基板ホルダラック１２８に戻されて待機する。   The substrate removing unit 130 includes a first substrate 122 and a second substrate 123 (hereinafter referred to as a laminated substrate) sandwiched and bonded between the upper substrate holder 124 and the lower substrate holder 125 that are carried out from the pressure unit 240 of the high temperature unit 106. Take out). The laminated substrate taken out from the substrate holder is returned to and stored in one of the substrate cassettes 112, 114, 116 by the robot arms 134, 132 and the second stage 142. The upper substrate holder 124 and the lower substrate holder 125, from which the laminated substrate has been taken out, are returned to the substrate holder rack 128 and stand by.

なお、基板貼り合せ装置１００に装填される第１基板１２２および第２基板１２３は、単体のシリコンウエハ、化合物半導体ウェハ、ガラス基板等の他、それらに素子、回路、端子等が形成されたものであってよい。また、装填された第１基板１２２および第２基板１２３が、既に複数のウェハを積層して形成された積層基板である場合もある。   The first substrate 122 and the second substrate 123 to be loaded into the substrate bonding apparatus 100 are a single silicon wafer, compound semiconductor wafer, glass substrate, etc., in which elements, circuits, terminals, etc. are formed. It may be. Further, the loaded first substrate 122 and second substrate 123 may be laminated substrates that are already formed by laminating a plurality of wafers.

一対のロボットアーム１３２、１３４のうち、基板カセット１１２、１１４、１１６に近い側に配置されたロボットアーム１３２は、基板カセット１１２、１１４、１１６、プリアライナ１２６およびステージ装置１４０の間で第１基板１２２および第２基板１２３を搬送する。一方、基板カセット１１２、１１４、１１６から遠い側に配置されたロボットアーム１３４は、ステージ装置１４０、基板ホルダラック１２８、基板取り外し部１３０およびエアロック２２０の間で、第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５を搬送する。   Of the pair of robot arms 132, 134, the robot arm 132 disposed on the side closer to the substrate cassettes 112, 114, 116 is the first substrate 122 between the substrate cassettes 112, 114, 116, the pre-aligner 126 and the stage apparatus 140. The second substrate 123 is transported. On the other hand, the robot arm 134 arranged on the side far from the substrate cassettes 112, 114, 116 is between the stage device 140, the substrate holder rack 128, the substrate removing unit 130, and the air lock 220, the first substrate 122, the second substrate. 123, the upper substrate holder 124 and the lower substrate holder 125 are conveyed.

ロボットアーム１３４は、基板ホルダラック１２８に対して、上基板ホルダ１２４および下基板ホルダ１２５の搬入および搬出も担う。また、ロボットアーム１３４は、第１基板１２２、第２基板１２３、上基板ホルダ１２４又は下基板ホルダ１２５を裏返す機能も有する。これにより、第１基板１２２において回路、素子、端子等が形成された面を第２基板１２３において回路、素子、端子等が形成された面に対向させて貼り合せることができる。   The robot arm 134 is also responsible for loading and unloading the upper substrate holder 124 and the lower substrate holder 125 with respect to the substrate holder rack 128. The robot arm 134 also has a function of turning over the first substrate 122, the second substrate 123, the upper substrate holder 124, or the lower substrate holder 125. Accordingly, the surface of the first substrate 122 on which circuits, elements, terminals, and the like are formed can be bonded to the surface of the second substrate 123 on which circuits, elements, terminals, and the like are formed.

高温部１０６は、断熱壁１０８、エアロック２２０、ロボットアーム２３０および複数の加圧部２４０を有する。断熱壁１０８は、高温部１０６を包囲して、高温部１０６の高い内部温度を維持すると共に、高温部１０６の外部への熱輻射を遮断する。これにより、高温部１０６の熱が常温部１０４に及ぼす影響を抑制できる。   The high temperature unit 106 includes a heat insulating wall 108, an air lock 220, a robot arm 230, and a plurality of pressure units 240. The heat insulating wall 108 surrounds the high temperature part 106, maintains a high internal temperature of the high temperature part 106, and blocks heat radiation to the outside of the high temperature part 106. Thereby, the influence which the heat of the high temperature part 106 has on the normal temperature part 104 can be suppressed.

ロボットアーム２３０は、加圧部２４０のいずれかとエアロック２２０との間で第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５を搬送する。エアロック２２０は、常温部１０４側と高温部１０６側とに、交互に開閉するシャッタ２２２、２２４を有する。   The robot arm 230 conveys the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 between any one of the pressure units 240 and the air lock 220. The air lock 220 includes shutters 222 and 224 that open and close alternately on the normal temperature part 104 side and the high temperature part 106 side.

第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５が常温部１０４から高温部１０６に搬入される場合、まず、常温部１０４側のシャッタ２２２が開かれ、ロボットアーム１３４が第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５をエアロック２２０に搬入する。次に、常温部１０４側のシャッタ２２２が閉じられ、高温部１０６側のシャッタ２２４が開かれる。   When the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 are carried into the high temperature unit 106 from the normal temperature unit 104, first, the shutter 222 on the normal temperature unit 104 side is opened, and the robot arm 134 is moved. The first substrate 122, the second substrate 123, the upper substrate holder 124 and the lower substrate holder 125 are carried into the air lock 220. Next, the shutter 222 on the normal temperature part 104 side is closed, and the shutter 224 on the high temperature part 106 side is opened.

続いて、ロボットアーム２３０が、エアロック２２０から第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５を搬出して、加圧部２４０のいずれかに装入する。加圧部２４０は、上基板ホルダ１２４と下基板ホルダ１２５に挟まれた状態で加圧部２４０に搬入された第１基板１２２及び第２基板１２３を加熱および加圧する。これにより第１基板１２２と第２基板１２３が貼り合わされる。なお、加圧部２４０は、第１基板１２２及び第２基板１２３を加熱せずに加圧することで第１基板１２２及び第２基板１２３を貼り合わせてもよい。   Subsequently, the robot arm 230 unloads the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 from the air lock 220 and inserts them into any of the pressure units 240. The pressurizing unit 240 heats and pressurizes the first substrate 122 and the second substrate 123 carried into the pressurizing unit 240 while being sandwiched between the upper substrate holder 124 and the lower substrate holder 125. Thereby, the first substrate 122 and the second substrate 123 are bonded together. Note that the pressing unit 240 may bond the first substrate 122 and the second substrate 123 together by pressing the first substrate 122 and the second substrate 123 without heating them.

高温部１０６から常温部１０４に第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５を搬出する場合は、上記の一連の動作を逆順で実行する。これらの一連の動作により、高温部１０６の内部雰囲気を常温部１０４側に漏らすことなく、第１基板１２２、第２基板１２３、上基板ホルダ１２４および下基板ホルダ１２５を高温部１０６に搬入または搬出できる。   When the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 are carried out from the high temperature unit 106 to the normal temperature unit 104, the above series of operations are executed in reverse order. Through these series of operations, the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 are carried into or out of the high temperature unit 106 without leaking the internal atmosphere of the high temperature unit 106 to the normal temperature unit 104 side. it can.

このように、基板貼り合せ装置１００内の多くの領域において、上基板ホルダ１２４が第１基板１２２を保持した状態で、又は下基板ホルダ１２５が第２基板１２３を保持した状態で、ロボットアーム１３４、２３０および第２ステージ１４２により搬送される。第１基板１２２を保持した上基板ホルダ１２４又は第２基板１２３を保持した下基板ホルダ１２５が搬送される場合、ロボットアーム１３４、２３０は、真空吸着、静電吸着等により上基板ホルダ１２４又は下基板ホルダ１２５を吸着して保持する。また、上基板ホルダ１２４又は下基板ホルダ１２５は、静電吸着により第１基板１２２または第２基板１２３を吸着して保持する。   Thus, in many areas in the substrate bonding apparatus 100, the robot arm 134 with the upper substrate holder 124 holding the first substrate 122 or the lower substrate holder 125 holding the second substrate 123. , 230 and the second stage 142. When the upper substrate holder 124 that holds the first substrate 122 or the lower substrate holder 125 that holds the second substrate 123 is transported, the robot arms 134 and 230 move the upper substrate holder 124 or the lower substrate by vacuum suction, electrostatic suction, or the like. The substrate holder 125 is sucked and held. Further, the upper substrate holder 124 or the lower substrate holder 125 attracts and holds the first substrate 122 or the second substrate 123 by electrostatic attraction.

図２は、ステージ装置１４０の構造を概略的に示す。ステージ装置１４０は、枠体３１０の内側に配された第１ステージ１４１と、第２ステージ１４２と、第１顕微鏡３４２と、第２顕微鏡３４４と、干渉計３７０と、計測器３７４と、制御部１４８とを備える。   FIG. 2 schematically shows the structure of the stage apparatus 140. The stage device 140 includes a first stage 141, a second stage 142, a first microscope 342, a second microscope 344, an interferometer 370, a measuring instrument 374, and a control unit disposed inside the frame 310. 148.

枠体３１０は、互いに平行で水平な天板３１２および底板３１６と、天板３１２および底板３１６を結合する複数の支柱３１４とを備える。天板３１２、支柱３１４および底板３１６は、それぞれ高剛性な材料により形成され、内部機構の動作に係る反力が作用した場合も変形を生じない。なお、基板貼り合せ装置１００に組み込まれた場合は、支柱３１４相互の間は断熱壁１４５により封止される。   The frame 310 includes a top plate 312 and a bottom plate 316 that are parallel to each other and a plurality of support columns 314 that couple the top plate 312 and the bottom plate 316. The top plate 312, the support column 314, and the bottom plate 316 are each formed of a highly rigid material and do not deform even when a reaction force relating to the operation of the internal mechanism is applied. When incorporated in the substrate bonding apparatus 100, the space between the columns 314 is sealed with a heat insulating wall 145.

第１ステージ１４１は、天板３１２の下面に固定される。第１ステージ１４１は、第１基板１２２を下面に保持する上基板ホルダ１２４を吸着する。当該吸着方法は、真空吸着であってよく、静電吸着であってもよい。第１基板１２２は、静電吸着により上基板ホルダ１２４の下面に保持されて、後述するアラインメントの対象の一方となる。   The first stage 141 is fixed to the lower surface of the top plate 312. The first stage 141 sucks the upper substrate holder 124 that holds the first substrate 122 on the lower surface. The adsorption method may be vacuum adsorption or electrostatic adsorption. The first substrate 122 is held on the lower surface of the upper substrate holder 124 by electrostatic attraction and becomes one of alignment targets to be described later.

第２ステージ１４２は、第１ステージ１４１に対向して昇降部３６０に配される。昇降部３６０は、底板３１６の上に載置され、底板に対して固定されたガイドレール３５２に案内されつつＸ方向に移動するＸステージ３５４と、Ｘステージ３５４の上でＹ方向に移動するＹステージ３５６の上に載置される。よって、制御部１４８の制御により、第２ステージ１４２に搭載された部材を、ＸＹ平面上の任意の方向に移動でき、Ｚ方向にも移動できる。Ｚ方向の移動距離は変位センサー３７２により検知できる。変位センサー３７２が検出したデータが制御部１４８にフィードバックされる。   The second stage 142 is disposed in the elevating unit 360 so as to face the first stage 141. The elevating unit 360 is placed on the bottom plate 316 and moved in the X direction while being guided by a guide rail 352 fixed to the bottom plate, and the Y stage moves on the X stage 354 in the Y direction. It is placed on the stage 356. Therefore, under the control of the control unit 148, the member mounted on the second stage 142 can be moved in any direction on the XY plane, and can also be moved in the Z direction. The movement distance in the Z direction can be detected by a displacement sensor 372. Data detected by the displacement sensor 372 is fed back to the control unit 148.

第２ステージ１４２は、真空吸着により下基板ホルダ１２５を保持し、下基板ホルダ１２５は、静電吸着により第２基板１２３を保持する。昇降部３６０は、制御部１４８からの指示に応じて、第２ステージ１４２をＺ方向に昇降する。第２ステージ１４２を上昇させることにより、下基板ホルダ１２５と上基板ホルダ１２４との間に第１基板１２２および第２基板１２３を挟み、重ね合わせることができる。   The second stage 142 holds the lower substrate holder 125 by vacuum chucking, and the lower substrate holder 125 holds the second substrate 123 by electrostatic chucking. The lifting unit 360 moves the second stage 142 up and down in the Z direction in response to an instruction from the control unit 148. By raising the second stage 142, it is possible to sandwich the first substrate 122 and the second substrate 123 between the lower substrate holder 125 and the upper substrate holder 124 so as to overlap each other.

昇降部３６０の駆動形式の例として、ＶＣＭ（ボイスコイルモータ）による駆動、シリンダー及びピストンによる駆動等が挙げられる。第２ステージ１４２は、更にそれぞれＸ、Ｙ、Ｚ軸を回転軸として傾斜又は回転する機能を有する。第２ステージ１４２は、粗動微動分離駆動機構を有する。   As an example of the drive type of the raising / lowering part 360, the drive by a VCM (voice coil motor), the drive by a cylinder and a piston, etc. are mentioned. The second stage 142 further has a function of tilting or rotating about the X, Y, and Z axes as rotation axes. The second stage 142 has a coarse / fine movement separation drive mechanism.

第１顕微鏡３４２は、天板３１２の下面に、第１ステージ１４１に対して所定の間隔をおいて固定される。第１顕微鏡３４２は、第２ステージ１４２に保持された第２基板１２３の表面に設けられたアライメントマークを観察することができる。第１顕微鏡３４２により観察された画像データは、制御部１４８に送信される。制御部１４８は、受信した画像データを解析して、第２基板１２３の位置、向きを特定する。   The first microscope 342 is fixed to the lower surface of the top plate 312 with a predetermined interval with respect to the first stage 141. The first microscope 342 can observe the alignment marks provided on the surface of the second substrate 123 held on the second stage 142. Image data observed by the first microscope 342 is transmitted to the control unit 148. The control unit 148 analyzes the received image data and specifies the position and orientation of the second substrate 123.

第２顕微鏡３４４は、第２ステージ１４２に固定され、第２ステージ１４２と共に移動することができる。第２顕微鏡３４４は、第１ステージ１４１に保持された第１基板１２２の表面に設けられたアライメントマークを観察することができる。第２顕微鏡３４４により観察された画像データは、制御部１４８に送信される。制御部１４８は、受信した画像データを解析して、第１基板１２２の位置、向きを特定する。   The second microscope 344 is fixed to the second stage 142 and can move together with the second stage 142. The second microscope 344 can observe the alignment mark provided on the surface of the first substrate 122 held on the first stage 141. Image data observed by the second microscope 344 is transmitted to the control unit 148. The control unit 148 analyzes the received image data and specifies the position and orientation of the first substrate 122.

干渉計３７０は、それぞれ第１ステージ１４１及び第２ステージ１４２に固定されたミラーに光を照射して、ミラーから反射される光の干渉により、第１ステージ１４１と第２ステージ１４２との相対距離、第１ステージ１４１および第２ステージ１４２の傾きを検知することができる。干渉計３７０は、検出したデータを制御部１４８にフィードバックする。   The interferometer 370 irradiates light to the mirrors fixed to the first stage 141 and the second stage 142, respectively, and the relative distance between the first stage 141 and the second stage 142 due to the interference of the light reflected from the mirror. The inclination of the first stage 141 and the second stage 142 can be detected. Interferometer 370 feeds back the detected data to control unit 148.

計測器３７４は、プローブ３７６を有し、当該プローブ３７６に接触した対象物の電気的特性を測定する。計測器３７４は、電気的特性として、例えば、電流、電圧、静電容量、抵抗等を測定する。計測器３７４は、第２ステージ１４２に対してＸ方向の位置であって、天板３１２に取り付けられている。プローブ３７６は、第２ステージ１４２上に配された第２基板１２３の上面に対して進退自在に設けられる。同様の計測器３７４が、第２ステージ１４２のＹ方向の位置であって、天板３１２にさらに設けられてもよい。   The measuring instrument 374 has a probe 376 and measures the electrical characteristics of an object that has contacted the probe 376. The measuring instrument 374 measures, for example, current, voltage, capacitance, resistance, etc. as electrical characteristics. The measuring instrument 374 is located in the X direction with respect to the second stage 142 and is attached to the top plate 312. The probe 376 is provided so as to be movable forward and backward with respect to the upper surface of the second substrate 123 arranged on the second stage 142. A similar measuring instrument 374 may be further provided on the top board 312 at the position of the second stage 142 in the Y direction.

制御部１４８は、第２ステージ１４２を制御する。制御部１４８は、干渉計３７０及び変位センサー３７２によりフィードバックされるデータに基づいて、第２ステージ１４２を精密に制御できる。制御部１４８は、特定した第１基板１２２及び第２基板１２３の位置データにより、第２ステージ１４２を精密に制御して、第１基板１２２と第２基板１２３の位置合せを行う。   The control unit 148 controls the second stage 142. The control unit 148 can precisely control the second stage 142 based on data fed back by the interferometer 370 and the displacement sensor 372. The control unit 148 precisely controls the second stage 142 based on the specified position data of the first substrate 122 and the second substrate 123 to align the first substrate 122 and the second substrate 123.

図３は、第１基板１２２と第２基板１２３とを重ね合わせた状態を概念的に示す平面図である。この図には、第１基板１２２と第１基板１２２より一回り大きい第２基板１２３とを貼り合せる実施形態の例を示す。   FIG. 3 is a plan view conceptually showing a state in which the first substrate 122 and the second substrate 123 are overlapped. This figure shows an example of an embodiment in which a first substrate 122 and a second substrate 123 that is slightly larger than the first substrate 122 are bonded together.

第１基板１２２は、第２基板１２３と重ね合わせる面において、回路４００と、第１導電領域４０２と、第３導電領域４０６と、第１大導電領域４１２と、第３大導電領域４１６とを有する。また、第２基板１２３は、第１基板１２２と重ね合わせる面において、回路４０１と、第２導電領域４０４と、第４導電領域４０８と、第２大導電領域４１４と、第４大導電領域４１８とを有する。回路４００および４０１は、能動素子、受動素子、配線等により構成され、個片化されて一定の機能を果たす電子回路である。回路４００および４０１は、それぞれ相手に対応するＴＳＶ等の電極を有する。第１基板１２２と第２基板１２３を重ね合わせて、当該対応する電極を接合することにより、回路４００と回路４０１を電気的に接続する。   The first substrate 122 includes a circuit 400, a first conductive region 402, a third conductive region 406, a first large conductive region 412, and a third large conductive region 416 on a surface overlapping the second substrate 123. Have. In addition, the second substrate 123 overlaps with the first substrate 122 on the surface 401, the circuit 401, the second conductive region 404, the fourth conductive region 408, the second large conductive region 414, and the fourth large conductive region 418. And have. The circuits 400 and 401 are electronic circuits that are configured by active elements, passive elements, wirings, and the like, and are separated into pieces to perform a certain function. Each of the circuits 400 and 401 has an electrode such as TSV corresponding to the counterpart. The circuit 400 and the circuit 401 are electrically connected by overlapping the first substrate 122 and the second substrate 123 and bonding the corresponding electrodes.

第１導電領域４０２は、導電材料から形成される。第１導電領域４０２は、一定のピッチ、例えば数μｍ間隔でＸ方向に複数配列される。第１導電領域４０２の材料として、Ａｕ、Ａｇ、Ｃｕ、Ａｌ等、電子回路の配線又は電極に用いる材料を用いることができる。第１導電領域４０２は、メッキ、スパッタ、蒸着、ＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）等により、金属層を形成してから、フォトリソグラフィ及びエッチング等の方法によりパターンを形成することにより得られる。第１導電領域４０２は、回路４００の配線、電極等と同じ工程で同時に形成されても良い。   The first conductive region 402 is formed from a conductive material. A plurality of first conductive regions 402 are arranged in the X direction at a constant pitch, for example, at intervals of several μm. As a material of the first conductive region 402, a material used for wiring or electrodes of an electronic circuit such as Au, Ag, Cu, Al, or the like can be used. The first conductive region 402 is obtained by forming a metal layer by plating, sputtering, vapor deposition, CVD (Chemical Vapor Deposition) or the like, and then forming a pattern by a method such as photolithography and etching. The first conductive region 402 may be formed at the same time in the same process as the wiring, electrodes, and the like of the circuit 400.

第２導電領域４０４は、第１導電領域４０２と異なるピッチ、図３に示す例においては第１導電領域４０２よりも狭いピッチでＸ方向に複数配列される。第２導電領域４０４は、第１基板１２２と第２基板１２３を重ね合わせる場合に、第１導電領域４０２との間に後述の対応関係を形成する位置に設けられる。各第２導電領域４０４は、Ｙ方向に延伸する形態を有し、図３に示すように、第２基板１２３が第１基板１２２と重ね合わせられたとき、径の小さい第１基板１２２の外周より外部にはみ出すことができるように設けられる。当該はみ出し部位に、計測器３７４のプローブ３７６が当てられ、電気的特性が測定される。第２導電領域４０４は、第１導電領域４０２と同様の材料を用いて、同様の方法により形成される。   A plurality of second conductive regions 404 are arranged in the X direction at a different pitch from the first conductive region 402, and in the example shown in FIG. The second conductive region 404 is provided at a position where a correspondence relationship described later is formed between the first conductive region 402 and the first conductive region 402 when the first substrate 122 and the second substrate 123 are overlaid. Each second conductive region 404 has a form extending in the Y direction. As shown in FIG. 3, when the second substrate 123 is overlapped with the first substrate 122, the outer periphery of the first substrate 122 having a small diameter is formed. It is provided so that it can protrude beyond the outside. The probe 376 of the measuring instrument 374 is applied to the protruding portion, and the electrical characteristics are measured. The second conductive region 404 is formed by the same method using the same material as that of the first conductive region 402.

第３導電領域４０６は、導電材料から形成される。第３導電領域４０６は、一定のピッチ、例えば数μｍ間隔でＹ方向に複数配列される。第３導電領域４０６は、第１導電領域４０２と同一形状および同一ピッチで形成されてもよいし、異なった形状または異なったピッチで形成されてもよい。   The third conductive region 406 is formed from a conductive material. A plurality of third conductive regions 406 are arranged in the Y direction at a constant pitch, for example, several μm intervals. The third conductive regions 406 may be formed with the same shape and the same pitch as the first conductive regions 402, or may be formed with different shapes or different pitches.

第４導電領域４０８は、第３導電領域４０６と異なるピッチ、図３に示す例においては第３導電領域４０６よりも狭いピッチでＹ方向に複数配列される。第４導電領域４０８は、第１基板１２２と第２基板１２３を重ね合わせる場合に、第３導電領域４０６との間に後述の対応関係を形成する位置に設けられる。各第４導電領域４０８は、Ｘ方向に延伸する形態を有し、図３に示すように、第２基板１２３が第１基板１２２と重ね合わせられたとき、径の小さい第１基板１２２の外周より外部にはみ出すことができるように設けられる。第３導電領域４０６および第４導電領域４０８も、第１導電領域４０２と同様の材料を用いて、同様の方法により形成される。   A plurality of the fourth conductive regions 408 are arranged in the Y direction at a pitch different from that of the third conductive region 406, in the example shown in FIG. The fourth conductive region 408 is provided at a position where a correspondence relationship described later is formed with the third conductive region 406 when the first substrate 122 and the second substrate 123 are overlaid. Each of the fourth conductive regions 408 has a form extending in the X direction. As shown in FIG. 3, when the second substrate 123 is overlapped with the first substrate 122, the outer periphery of the first substrate 122 having a small diameter is formed. It is provided so that it can protrude beyond the outside. The third conductive region 406 and the fourth conductive region 408 are also formed using the same material as the first conductive region 402 by the same method.

第１大導電領域４１２及び第３大導電領域４１６は、第１導電領域４０２又は第３導電領域４０６より大きい。第１大導電領域４１２及び第３大導電領域４１６は、第１導電領域４０２と同様の材料を用いて、同様の方法により形成される。   The first large conductive region 412 and the third large conductive region 416 are larger than the first conductive region 402 or the third conductive region 406. The first large conductive region 412 and the third large conductive region 416 are formed by the same method using the same material as that of the first conductive region 402.

第２大導電領域４１４および第４大導電領域４１８は、第２導電領域４０４又は第４導電領域４０８より大きい導電領域である。第２大導電領域４１４は、第１基板１２２と第２基板１２３を重ね合わせる場合に、第１大導電領域４１２との間に後述の対応関係を形成する位置に設けられる。また、第４大導電領域４１８は、第１基板１２２と第２基板１２３を重ね合わせる場合に、第３大導電領域４１６との間に後述の対応関係を形成する位置に設けられる。第２大導電領域４１４及び第４大導電領域４１８は、第１導電領域４０２と同様の材料を用いて、同様の方法により形成される。   The second large conductive region 414 and the fourth large conductive region 418 are conductive regions larger than the second conductive region 404 or the fourth conductive region 408. The second large conductive region 414 is provided at a position where a correspondence relationship described later is formed with the first large conductive region 412 when the first substrate 122 and the second substrate 123 are overlapped. The fourth large conductive region 418 is provided at a position where a correspondence relationship described later is formed with the third large conductive region 416 when the first substrate 122 and the second substrate 123 are overlapped. The second large conductive region 414 and the fourth large conductive region 418 are formed by the same method using the same material as the first conductive region 402.

図４は、図３において２点鎖線により囲んだ部分の拡大図である。複数の第１導電領域４０２のそれぞれを領域ｒ、領域ｓ、領域ｔ、領域ｕ、領域ｖと称する。また、複数の第２導電領域４０４を区別する目的で、それぞれ領域ａ、領域ｂ、領域ｃ、領域ｄ、領域ｅ、領域ｆと称する。   FIG. 4 is an enlarged view of a portion surrounded by a two-dot chain line in FIG. Each of the plurality of first conductive regions 402 is referred to as a region r, a region s, a region t, a region u, and a region v. For the purpose of distinguishing the plurality of second conductive regions 404, they are referred to as a region a, a region b, a region c, a region d, a region e, and a region f, respectively.

図５は、図４におけるＡ−Ａ部分の断面図である。図５は、第１基板１２２と第２基板１２３とが位置ずれなく重ね合わされ、第１導電領域４０２と第２導電領域４０４とが接触した状態を示す。図４及び図５に示す場合に、計測器３７４は、隣り合う二つの第２導電領域４０４の間の電気的導通を確認する。この場合に、計測器３７４は、領域ａ、ｂ間、領域ｂ、ｃ間等に順次、直流電圧を印加して、それぞれの出力電流を測定して制御部１４８に送る。   FIG. 5 is a cross-sectional view taken along line AA in FIG. FIG. 5 illustrates a state in which the first substrate 122 and the second substrate 123 are overlapped without displacement and the first conductive region 402 and the second conductive region 404 are in contact with each other. In the case shown in FIGS. 4 and 5, the measuring instrument 374 confirms electrical continuity between two adjacent second conductive regions 404. In this case, the measuring instrument 374 sequentially applies a DC voltage between the regions a and b, between the regions b and c, etc., measures each output current, and sends it to the control unit 148.

図４及び図５に示す例において、領域ｂと領域ｃの間は領域ｓを介して電気的に導通しており、他の第２導電領域４０４の間は導通しない。よって、制御部１４８は、計測器３７４の計測値に基づいて領域ｂと領域ｃの間が導通したことを検出することにより、第１基板１２２と第２基板１２３との位置ずれがないことを検出することができる。   In the example shown in FIGS. 4 and 5, the region b and the region c are electrically connected via the region s and are not connected between the other second conductive regions 404. Therefore, the control unit 148 detects that there is no displacement between the first substrate 122 and the second substrate 123 by detecting that the region b and the region c are electrically connected based on the measurement value of the measuring instrument 374. Can be detected.

図６は、第１基板１２２と第２基板１２３とが位置ずれして重ね合わされた状態を示す。第１基板１２２と第２基板１２３との相対位置がずれると、導通が生ずる第２導電領域４０４の組みの位置が変わる。例えば、図６に示す例において、制御部１４８は、計測器３７４の計測値に基づいて領域ｂと領域ｃの間が導通しなかったことを検出することにより、第１基板１２２と第２基板１２３との位置ずれがあることを検出することができる。   FIG. 6 shows a state where the first substrate 122 and the second substrate 123 are overlapped with each other. When the relative position between the first substrate 122 and the second substrate 123 is shifted, the position of the set of second conductive regions 404 in which conduction occurs is changed. For example, in the example illustrated in FIG. 6, the control unit 148 detects that the electrical connection between the region b and the region c is not conducted based on the measurement value of the measuring instrument 374, and thereby the first substrate 122 and the second substrate. It is possible to detect that there is a positional deviation with respect to 123.

さらにこの場合に、いずれの第２導電領域の組が電気的に導通しているかを検出することにより、第１基板１２２と第２基板１２３との位置ずれの量および方向を検出することができる。例えば、図６の場合に、領域ｃと領域ｄの間が領域ｔを介して電気的に導通する。よって、制御部１４８は、計測器３７４の計測値に基づいて領域ｃと領域ｄの間が導通したことを検出することにより、第１基板１２２に対して第２基板１２３が図中の右方向にピッチの半分程度の量だけ位置ずれしたことを検出することができる。   Further, in this case, it is possible to detect the amount and direction of the positional deviation between the first substrate 122 and the second substrate 123 by detecting which set of second conductive regions is electrically conductive. . For example, in the case of FIG. 6, the region c and the region d are electrically connected via the region t. Therefore, the control unit 148 detects that the region c and the region d are electrically connected based on the measurement value of the measuring instrument 374, so that the second substrate 123 is in the right direction in the drawing with respect to the first substrate 122. It is possible to detect that the position has shifted by about half the pitch.

以上、第２導電領域４０４の組の間の電気的導通を検出することにより、第１基板１２２と第２基板１２３との重ね合わせにおけるずれの有無及びずれの大きさを検出することができる。なおこの場合に、第２導電領域４０４のうち一対の第２導電領域４０４だけが導通するように、第１導電領域４０２及び第２導電領域４０４のピッチ及び個数の組み合わせを選択してもよいし、複数の対の第２導電領域４０４が導通するように当該ピッチ及び個数の組み合わせを選択してもよい。第１導電領域４０２と第２導電領域４０４との相対関係と同様に、第３導電領域４０６と第４導電領域４０８が設けられてよい。   As described above, by detecting the electrical continuity between the sets of the second conductive regions 404, it is possible to detect the presence / absence of displacement and the magnitude of the displacement in overlaying the first substrate 122 and the second substrate 123. In this case, the combination of the pitch and the number of the first conductive regions 402 and the second conductive regions 404 may be selected so that only the pair of second conductive regions 404 among the second conductive regions 404 are conductive. The combination of the pitch and the number may be selected so that the plurality of pairs of second conductive regions 404 are conductive. Similar to the relative relationship between the first conductive region 402 and the second conductive region 404, a third conductive region 406 and a fourth conductive region 408 may be provided.

ここで、図４を用いて上記ピッチの一例を説明する。第１基板１２２と第２基板１２３との間に求められている位置合わせの精度Δに対して、第１基板１２２のピッチＰ１および第２基板１２３のピッチＰ２は下記の関係にあることが好ましい。
Δ＞｜Ｐ１−Ｐ２｜
これにより、求められている位置分解能を得ることができる。 Here, an example of the pitch will be described with reference to FIG. For the alignment accuracy Δ required between the first substrate 122 and the second substrate 123, the pitch P1 of the first substrate 122 and the pitch P2 of the second substrate 123 are preferably in the following relationship. .
Δ> | P1-P2 |
Thereby, the required position resolution can be obtained.

さらに、第１基板１２２の線幅Ｌ１、間隔幅Ｓ１、および第２基板１２３の線幅Ｌ２、間隔幅Ｓ２は下記の関係にあることが好ましい。
Ｓ１＜Ｌ２
Ｓ２＜Ｌ１
これにより、いずれかの場所で導通が形成される。 Furthermore, it is preferable that the line width L1 and the interval width S1 of the first substrate 122 and the line width L2 and the interval width S2 of the second substrate 123 have the following relationship.
S1 <L2
S2 <L1
Thereby, conduction is formed at any place.

よって、例えば、Ｐ１＝８μｍ、Ｓ１＝４μｍ、Ｌ１＝４μｍ、Ｐ２＝６μｍ、Ｓ２＝３μｍ、Ｌ２＝３μｍとすると、上記式を満足せず、いずれの導電領域でも導通が形成されない第１基板１２２と第２基板１２３との位置が生じえる。他の例として、Ｐ１＝８μｍ、Ｓ１＝２μｍ、Ｌ１＝５μｍ、Ｐ２＝６μｍ、Ｓ２＝３μｍ、Ｌ２＝３μｍとすると、上記式を満足し、いずれかの導電領域で導通が形成される。   Therefore, for example, if P1 = 8 μm, S1 = 4 μm, L1 = 4 μm, P2 = 6 μm, S2 = 3 μm, and L2 = 3 μm, the above formula is not satisfied, and no conduction is formed in any conductive region. And the position of the second substrate 123 may occur. As another example, when P1 = 8 μm, S1 = 2 μm, L1 = 5 μm, P2 = 6 μm, S2 = 3 μm, and L2 = 3 μm, the above equation is satisfied, and conduction is formed in any conductive region.

さらに、導通を形成する第２導電領域４０４の対の個数ｎは次式により求められる。
ｎ＝（Ｌ１−Ｓ２）／（Ｐ２−Ｐ１）
よって例えば上記のＰ１＝７μｍ、Ｓ１＝２μｍ、Ｌ１＝５μｍ、Ｐ２＝６μｍ、Ｓ２＝３μｍ、Ｌ２＝３μｍとすると、ｎ＝２となる。他の例として、例えば、Ｐ１＝６．５μｍ、Ｓ１＝１．５μｍ、Ｌ１＝５μｍ、Ｐ２＝６μｍ、Ｓ２＝３μｍ、Ｌ２＝３μｍでｎ＝４となるようにしてもよいし、Ｐ１＝７μｍ、Ｓ１＝２μｍ、Ｌ１＝５μｍ、Ｐ２＝６．５μｍ、Ｓ２＝３μｍ、Ｌ２＝３．５μｍでｎ＝３となるようにしてもよい。 Further, the number n of pairs of second conductive regions 404 that form conduction is obtained by the following equation.
n = (L1-S2) / (P2-P1)
Therefore, for example, when P1 = 7 μm, S1 = 2 μm, L1 = 5 μm, P2 = 6 μm, S2 = 3 μm, and L2 = 3 μm, n = 2. As another example, for example, P1 = 6.5 μm, S1 = 1.5 μm, L1 = 5 μm, P2 = 6 μm, S2 = 3 μm, L2 = 3 μm, and n = 4, or P1 = 7 μm S1 = 2 μm, L1 = 5 μm, P2 = 6.5 μm, S2 = 3 μm, L2 = 3.5 μm, and n = 3.

第１導電領域４０２と第２導電領域４０４との組み合わせの電気的導通を検出することにより、第１基板１２２と第２基板１２３との間のＸ方向のずれが検出できる。さらに、第３導電領域４０６と第４導電領域４０８との組み合わせの電気的導通を検出することにより、第１基板１２２と第２基板１２３との間のＹ方向のずれが検出できる。   By detecting the electrical continuity of the combination of the first conductive region 402 and the second conductive region 404, a deviation in the X direction between the first substrate 122 and the second substrate 123 can be detected. Further, by detecting the electrical continuity of the combination of the third conductive region 406 and the fourth conductive region 408, a shift in the Y direction between the first substrate 122 and the second substrate 123 can be detected.

第１導電領域４０２及び第２導電領域４０４の位置から、第１基板１２２及び１２３の中心に対して１８０°回転した対向位置に、更に第１導電領域４０２及び第２導電領域４０４と同等の第５導電領域と第６導電領域の組み合わせを設けてもよい。これにより、第１導電領域４０２と第２導電領域４０４との組み合わせの電気的導通と、第５導電領域と第６導電領域の組み合わせの電気的導通との違いを比較することにより、Ｚ軸まわりの回転のずれが検出できる。   From the position of the first conductive region 402 and the second conductive region 404 to the opposite position rotated by 180 ° with respect to the centers of the first substrates 122 and 123, a first equivalent to the first conductive region 402 and the second conductive region 404 is obtained. A combination of the fifth conductive region and the sixth conductive region may be provided. Thus, by comparing the difference between the electrical conduction of the combination of the first conductive region 402 and the second conductive region 404 and the electrical conduction of the combination of the fifth conductive region and the sixth conductive region, Rotation deviation can be detected.

第１大導電領域４１２及び第２大導電領域４１４の大きさ、位置は、第１基板１２２と第２基板１２３とのＸ方向の位置ずれが第１導電領域４０２及び第２導電領域４０４により計測できる範囲を超えたことを検出できるように、設定されることが好ましい。例えば、第１導電領域４０２及び第２導電領域４０４のピッチのうち、大きいピッチ分に相当するずれを許容範囲に設定した場合に、当該許容範囲内のずれに対しては第１大導電領域４１２を介して二つの第２大導電領域４１４の間に電気的に導通するが、許容範囲外のずれに対して、二つの第２大導電領域４１４の間の電気的には導通しない、第１大導電領域４１２及び第２大導電領域４１４の大きさ及び位置等を設ける。これにより、大きい位置ずれは、第１大導電領域４１２と第２大導電領域４１４との組み合わせにより検出され、微少な位置ずれは、第１導電領域４０２及び第２導電領域４０４の組み合わせにより検出される。同様に、Ｙ方向の大きい位置ずれは、第３大導電領域４１６と第４大導電領域４１８の組み合わせにより検出できるように、第３大導電領域４１６及び第４大導電領域４１８の大きさ、位置を設計してよい。   The size and position of the first large conductive region 412 and the second large conductive region 414 are measured by the first conductive region 402 and the second conductive region 404 in the X direction displacement between the first substrate 122 and the second substrate 123. It is preferably set so that it can be detected that the range is exceeded. For example, when a shift corresponding to a large pitch among the pitches of the first conductive region 402 and the second conductive region 404 is set as an allowable range, the first large conductive region 412 is used for the shift within the allowable range. Is electrically connected between the two second large conductive regions 414, but is not electrically connected between the two second large conductive regions 414 for a deviation outside the allowable range. The size and position of the large conductive region 412 and the second large conductive region 414 are provided. Thus, a large misalignment is detected by the combination of the first large conductive region 412 and the second large conductive region 414, and a slight misalignment is detected by the combination of the first conductive region 402 and the second conductive region 404. The Similarly, the size and position of the third large conductive region 416 and the fourth large conductive region 418 can be detected by the combination of the third large conductive region 416 and the fourth large conductive region 418 so that a large displacement in the Y direction can be detected. You may design.

図７は、基板相対位置検出方法の一実施形態のフローチャートである。この基板相対位置検出方法は、二つの基板を位置合せするステップＳ０１０と、二つの基板を接近させるステップＳ０２０と、大導電領域の電気的特性を測定するステップＳ０３０と、位置ずれを検出するステップＳ０４０と、位置ずれが許容範囲を超えたかを判断するステップＳ０５０と、導電領域の電気的特性を測定するステップＳ０６０と、二つの基板の相対位置を検出するステップＳ０７０と、警告するステップＳ０８０とを備える。   FIG. 7 is a flowchart of an embodiment of a substrate relative position detection method. In this substrate relative position detection method, step S010 for aligning two substrates, step S020 for bringing the two substrates closer, step S030 for measuring the electrical characteristics of the large conductive region, and step S040 for detecting misalignment. And step S050 for determining whether the positional deviation exceeds the allowable range, step S060 for measuring the electrical characteristics of the conductive region, step S070 for detecting the relative position of the two substrates, and step S080 for warning. .

ステップＳ０１０において、第１基板１２２及び第２基板１２３をステージ装置１４０に設置する。まず、ロボットアーム１３２により、基板カセット１１２、１１４、１１６のいずれかに収容されている一枚の第１基板１２２がプリアライナ１２６に搬入され、プリアラインされる。一方、ロボットアーム１３４は、一枚の上基板ホルダ１２４を第２ステージ１４２に搭載して、ロボットアーム１３２の近傍まで搬送させる。ロボットアーム１３２は、この上基板ホルダ１２４に、プリアラインされた第１基板１２２を搭載して保持させる。   In step S 010, the first substrate 122 and the second substrate 123 are placed on the stage apparatus 140. First, the first arm 122 accommodated in one of the substrate cassettes 112, 114, and 116 is loaded into the pre-aligner 126 and pre-aligned by the robot arm 132. On the other hand, the robot arm 134 mounts the single upper substrate holder 124 on the second stage 142 and conveys it to the vicinity of the robot arm 132. The robot arm 132 mounts and holds the pre-aligned first substrate 122 on the upper substrate holder 124.

第２ステージ１４２が再びロボットアーム１３４の側に移動する。ロボットアーム１３４は、第１基板１２２を保持した上基板ホルダ１２４を裏返して、第１ステージ１４１に近づけて、真空吸着等により第１ステージ１４１に保持させる。   The second stage 142 moves again to the robot arm 134 side. The robot arm 134 turns over the upper substrate holder 124 that holds the first substrate 122, approaches the first stage 141, and holds it on the first stage 141 by vacuum suction or the like.

ロボットアーム１３４は、下基板ホルダ１２５を第２ステージ１４２に搭載して、ロボットアーム１３２の近傍まで搬送させる。ロボットアーム１３２は、この下基板ホルダ１２５に、プリアラインされた第２基板１２３を搭載して保持させる。第２ステージ１４２は、下基板ホルダ１２５及び第２基板１２３を載置して、第１ステージ１４１の直下に移動する。   The robot arm 134 mounts the lower substrate holder 125 on the second stage 142 and transports it to the vicinity of the robot arm 132. The robot arm 132 mounts and holds the pre-aligned second substrate 123 on the lower substrate holder 125. The second stage 142 mounts the lower substrate holder 125 and the second substrate 123 and moves directly below the first stage 141.

第２顕微鏡３４４により、第１基板１２２の表面に設けられたアライメント用マークを観察して、その位置情報を制御部１４８に送信する。制御部１４８は、受信したデータに基づいて、第１ステージ１４１に保持された第１基板１２２の位置、向き等を算出して、記憶する。   The second microscope 344 observes the alignment marks provided on the surface of the first substrate 122 and transmits the position information to the control unit 148. The control unit 148 calculates and stores the position, orientation, and the like of the first substrate 122 held on the first stage 141 based on the received data.

第１顕微鏡３４２により、第２基板１２３の表面に設けられたアライメント用マークを観察して、その位置情報を制御部１４８に送信する。制御部１４８は、受信したデータに基づいて、第２ステージ１４２に保持された第２基板１２３の位置、向き等を算出して、記憶する。   The first microscope 342 observes the alignment marks provided on the surface of the second substrate 123 and transmits the position information to the control unit 148. The control unit 148 calculates and stores the position, orientation, and the like of the second substrate 123 held on the second stage 142 based on the received data.

制御部１４８は、算出して記憶した第１基板１２２及び第２基板１２３の位置情報に基づいて、第２ステージ１４２を移動して、第１基板１２２と第２基板１２３における接合すべき電極同士の位置が合うようにアラインメントする。上記の移動は、Ｘ−Ｙ軸面内で平行移動、Ｚ軸の回転移動、およびＸ軸又はＹ軸の傾斜移動を含む。   The controller 148 moves the second stage 142 based on the position information of the first substrate 122 and the second substrate 123 calculated and stored, and the electrodes to be joined on the first substrate 122 and the second substrate 123 are connected to each other. Align so that the positions of are aligned. The above movement includes parallel movement in the XY axis plane, rotational movement of the Z axis, and tilt movement of the X axis or Y axis.

また、第２顕微鏡３４４の焦点を第１基板１２２の表面に合わせたときの第２ステージ１４２の高さすなわちＺ座標の情報、及び第１顕微鏡３４２の焦点を第２基板１２３の表面に合わせたときの第２ステージ１４２の高さの情報も制御部１４８に送信され、制御部１４８は、その情報に基づいて第１ステージ１４１の表面と第２ステージ１４２の表面との間隔を算出する。   Further, the height of the second stage 142 when the second microscope 344 is focused on the surface of the first substrate 122, that is, information on the Z coordinate, and the focus of the first microscope 342 are aligned with the surface of the second substrate 123. Information on the height of the second stage 142 is also transmitted to the control unit 148, and the control unit 148 calculates the interval between the surface of the first stage 141 and the surface of the second stage 142 based on the information.

ステップＳ０２０において、第２ステージ１４２を上昇させて、規定の距離まで第１基板１２２と第２基板１２３を接近させる。上述の計算により、制御部１４８は、第１基板１２２の表面と第２基板１２３の表面との間の間隔を正確に算出できるので、第２ステージ１４２を正確に制御して接近させることができる。   In step S020, the second stage 142 is raised to bring the first substrate 122 and the second substrate 123 closer to a specified distance. According to the above calculation, the controller 148 can accurately calculate the distance between the surface of the first substrate 122 and the surface of the second substrate 123, so that the second stage 142 can be accurately controlled and approached. .

第１基板１２２と第２基板１２３との接触の衝撃による破損を防ぐ目的で、制御部１４８は、算出された第１基板１２２の表面と第２基板１２３の表面との間隔よりも所定距離手前まで高速に第２ステージ１４２を上昇させ、当該所定距離から低速に第２ステージ１４２を上昇させて、規定の距離まで第１基板１２２と第２基板１２３を接近させる。このような制御により、基板を接近させる時間を短縮しながら、接触による基板の破損を防ぐことができる。   For the purpose of preventing breakage due to the impact of contact between the first substrate 122 and the second substrate 123, the control unit 148 is a predetermined distance before the calculated distance between the surface of the first substrate 122 and the surface of the second substrate 123. The second stage 142 is raised at a high speed until the second stage 142 is raised from the predetermined distance to a low speed, and the first substrate 122 and the second substrate 123 are brought closer to a specified distance. By such control, it is possible to prevent the substrate from being damaged by the contact while shortening the time for the substrate to approach.

ステップＳ０３０において、第１大導電領域４１２と第２大導電領域４１４の組み合わせおよび第３大導電領域４１６と第４大導電領域４１８の組み合わせの電気的特性を測定する。例えば、２本の第２大導電領域４１４にプローブ３７６を当て、直流電圧を印加したときの直流電流を測定する。測定結果は、制御部１４８に送信される。   In step S030, the electrical characteristics of the combination of the first large conductive region 412 and the second large conductive region 414 and the combination of the third large conductive region 416 and the fourth large conductive region 418 are measured. For example, the probe 376 is applied to the two second large conductive regions 414, and the DC current when a DC voltage is applied is measured. The measurement result is transmitted to the control unit 148.

ステップＳ０４０において、制御部１４８は、上記の測定値から電気的導通の有無を検出し、第１基板１２２と第２基板１２３との間の位置ずれを検出する。例えば、第２大導電領域４１４の直流電流値から、第１基板１２２と第２基板１２３との間のＸ方向のずれを検出できる。また、第４大導電領域４１８の直流電流値から、第１基板１２２と第２基板１２３との間のＹ方向のずれを検出できる。   In step S040, the control unit 148 detects the presence / absence of electrical continuity from the measured value, and detects a positional shift between the first substrate 122 and the second substrate 123. For example, the deviation in the X direction between the first substrate 122 and the second substrate 123 can be detected from the direct current value of the second large conductive region 414. Further, the deviation in the Y direction between the first substrate 122 and the second substrate 123 can be detected from the direct current value of the fourth large conductive region 418.

ステップＳ０５０において、制御部１４８は、上記の位置ずれが規定の許容範囲を超えたか否かを判断する。この場合に制御部１４８は電気的導通の有無を当該許容範囲としてもよい。これにより、第１導電領域４０２及び第２導電領域４０４のピッチのうち、大きいピッチを超える位置ずれが発生した場合には、当該第１導電領域４０２及び第２導電領域４０４による電気的導通を検出する前に、当該位置ずれを検出することができる。ここで、第１導電領域４０２及び第２導電領域４０４のピッチのうち、大きいピッチを超える位置ずれが発生すると、本来の組み合わせからｎピッチ（ここでｎは整数）ずれた位置における電気的導通の有無は、位置ずれがない場合と区別することが困難になる。これに対し、第１導電領域４０２等の電気的導通の有無の検出に先立って、上記の通り第１大導電領域４１２と第２大導電領域４１４との組み合わせの電気的導通を検出することにより、ｎピッチ以上のずれを先に検出し下記警告等をすることができる。   In step S050, the control unit 148 determines whether or not the above-described positional deviation exceeds a prescribed allowable range. In this case, the control unit 148 may set the allowable range based on the presence or absence of electrical continuity. As a result, when a positional shift exceeding a large pitch among the pitches of the first conductive region 402 and the second conductive region 404 occurs, electrical conduction by the first conductive region 402 and the second conductive region 404 is detected. The positional deviation can be detected before the operation. Here, when a positional deviation exceeding a large pitch among the pitches of the first conductive region 402 and the second conductive region 404 occurs, electrical conduction at a position shifted by n pitches (where n is an integer) from the original combination. It is difficult to distinguish the presence / absence from the case where there is no displacement. On the other hand, by detecting the electrical continuity of the combination of the first large conductive region 412 and the second large conductive region 414 as described above, before detecting the presence or absence of the electrical continuity of the first conductive region 402 or the like. , A deviation of n pitches or more can be detected first and the following warning can be given.

Ｘ方向の位置ずれがこの許容範囲を超えたとき、ステップＳ０８０に進み、警告を発して、ステップＳ０１０をやり直す。Ｙ方向についても、同様の判断ができる。また、位置ずれが許容範囲内であれば、次のステップＳ０６０に進む。   When the positional deviation in the X direction exceeds the allowable range, the process proceeds to step S080, a warning is issued, and step S010 is performed again. The same determination can be made for the Y direction. If the positional deviation is within the allowable range, the process proceeds to the next step S060.

ステップＳ０６０において、計測器３７４は、図４から図６で説明したように、第１導電領域４０２と第２導電領域４０４の組み合わせおよび第３導電領域４０６と第４導電領域４０８の組み合わせの電気的特性を測定する。測定結果は、制御部１４８に送信される。   In step S060, as described with reference to FIGS. 4 to 6, the measuring instrument 374 performs electrical combination of the combination of the first conductive region 402 and the second conductive region 404 and the combination of the third conductive region 406 and the fourth conductive region 408. Measure characteristics. The measurement result is transmitted to the control unit 148.

ステップＳ０７０において、制御部１４８は、上記の測定値から第１基板１２２と第２基板１２３との相対位置を検出する。例えば、制御部１４８は、図４から図６で説明したように、第２導電領域４０４の直流電流値から、第１基板１２２と第２基板１２３との間のＸ方向のずれを検出できる。さらに、制御部１４８は、第４導電領域４０８の直流電流値から、第１基板１２２と第２基板１２３との間のＹ方向のずれを検出できる。   In step S070, the control unit 148 detects the relative position between the first substrate 122 and the second substrate 123 from the above measured values. For example, as described with reference to FIGS. 4 to 6, the control unit 148 can detect a deviation in the X direction between the first substrate 122 and the second substrate 123 from the direct current value of the second conductive region 404. Further, the control unit 148 can detect a deviation in the Y direction between the first substrate 122 and the second substrate 123 from the direct current value of the fourth conductive region 408.

以上のプロセスにより、第１基板１２２と第２基板１２３との相対位置を検出することができる。なおステップＳ０７０において、位置ずれの許容範囲を規定して、第１基板１２２と第２基板１２３との相対位置がその許容範囲内か否かを判断し、許容範囲を超えた場合には、ステップＳ０１０の位置合せからやり直してよい。第１基板１２２と第２基板１２３との相対位置が許容範囲内であれば、ロボットアーム１３４によりエアロック２２０に搬送され、図１に示した加圧部２４０に装入される。加圧部２４０において加熱および加圧されることにより、第１基板１２２および第２基板１２３は互いに貼り合わされて一体になる。   With the above process, the relative position between the first substrate 122 and the second substrate 123 can be detected. In step S070, an allowable range of misregistration is defined, and it is determined whether or not the relative position between the first substrate 122 and the second substrate 123 is within the allowable range. You may start again from the alignment of S010. If the relative position between the first substrate 122 and the second substrate 123 is within an allowable range, the robot arm 134 transfers the air to the air lock 220 and inserts it into the pressurizing unit 240 shown in FIG. By being heated and pressurized in the pressure unit 240, the first substrate 122 and the second substrate 123 are bonded together to be integrated.

図１から図７に示す実施形態において、制御部１４８は第２導電領域４０４等の電気的導通の有無を検出しているが、電気的な特性の検出は導通の有無に限られない。他の例として、制御部１４８は、第２導電領域４０４の電気的な抵抗値を検出してもよい。これにより、制御部１４８は、抵抗値の大小により位置ずれの量を検出することができる。   In the embodiment shown in FIGS. 1 to 7, the control unit 148 detects the presence / absence of electrical continuity of the second conductive region 404 and the like, but the detection of the electrical characteristics is not limited to the presence / absence of continuity. As another example, the controller 148 may detect the electrical resistance value of the second conductive region 404. Thereby, the control unit 148 can detect the amount of displacement based on the magnitude of the resistance value.

図８は、制御部１４８が第２導電領域４０４等の電気的な特性を検出する他の例である。図８に示すように、第１基板１２２と第２基板１２３が近接しつつ離間した状態で、計測器３７４が二つの第２導電領域４０４の間の静電容量を計測する。これにより、制御部１４８は、第１基板１２２と第２基板１２３との相対位置を検出する。この場合に、各第２導電領域４０４に対する各第１導電領域４０２の相対位置が異なるので、近接する第１導電領域４０２の位置に応じて二つの第２導電領域４０４の間の静電容量が異なる。よって、計測器３７４が領域ａ、ｂ間、領域ｃ、ｄ間等の静電容量を計測して、制御部１４８がこれらの静電容量値を比較することにより、第１基板１２２と第２基板１２３との相対位置を検出することができる。この場合に計測器３７４は、二つの第２導電領域４０４の間に交流電圧を印加して、出力される交流電流を計測することによって静電容量を計測してもよい。   FIG. 8 shows another example in which the control unit 148 detects electrical characteristics of the second conductive region 404 and the like. As shown in FIG. 8, the measuring instrument 374 measures the electrostatic capacitance between the two second conductive regions 404 in a state where the first substrate 122 and the second substrate 123 are spaced apart from each other. Thereby, the control unit 148 detects the relative position between the first substrate 122 and the second substrate 123. In this case, since the relative position of each first conductive region 402 with respect to each second conductive region 404 is different, the capacitance between the two second conductive regions 404 depends on the position of the adjacent first conductive region 402. Different. Therefore, the measuring device 374 measures the capacitance between the regions a and b, between the regions c and d, and the control unit 148 compares these capacitance values, whereby the first substrate 122 and the second substrate are compared with each other. The relative position with respect to the substrate 123 can be detected. In this case, the measuring instrument 374 may measure the capacitance by applying an AC voltage between the two second conductive regions 404 and measuring the output AC current.

図８に示す実施形態によれば、第１基板１２２と第２基板１２３の相対位置を非接触状態で検出できるので、容易に位置合せの修正ができる。また、重ね合わせ直前の相対位置を確認できるので、位置合せの信頼度を高めることができる。   According to the embodiment shown in FIG. 8, since the relative position between the first substrate 122 and the second substrate 123 can be detected in a non-contact state, the alignment can be easily corrected. Further, since the relative position immediately before the overlapping can be confirmed, the reliability of alignment can be increased.

図９は、制御部１４８が第２導電領域４０４等の電気的な特性を検出する他の例である。図９に示すように、第２導電領域４０４の上には、誘電体層４３２が設けられている。この場合に、図９に示すように、第１導電領域４０２と誘電体層４３２とが接触した状態で、すなわち、誘電体層４３２を介して第１基板１２２と第２基板１２３が接触した状態で、計測器３７４が二つの第２導電領域４０４の間の静電容量を計測する。制御部１４８がこれらの静電容量値を比較することにより、図８の場合と同様に、第１基板１２２と第２基板１２３との相対位置を検出することができる。   FIG. 9 is another example in which the control unit 148 detects electrical characteristics of the second conductive region 404 and the like. As shown in FIG. 9, a dielectric layer 432 is provided on the second conductive region 404. In this case, as shown in FIG. 9, the first conductive region 402 and the dielectric layer 432 are in contact with each other, that is, the first substrate 122 and the second substrate 123 are in contact with each other through the dielectric layer 432. Thus, the measuring instrument 374 measures the capacitance between the two second conductive regions 404. The control unit 148 compares these capacitance values, so that the relative position between the first substrate 122 and the second substrate 123 can be detected as in the case of FIG.

図９に示す実施形態によれば、第１導電領域４０２と誘電体層４３２とを接触させるので、高さ方向について第１導電領域４０２と第２導電領域４０４との距離を一定に保つことができ、当該高さ方向に直交する方向の位置ずれと静電容量の変化とを正確に対応付けることができる。   According to the embodiment shown in FIG. 9, since the first conductive region 402 and the dielectric layer 432 are brought into contact with each other, the distance between the first conductive region 402 and the second conductive region 404 can be kept constant in the height direction. The positional deviation in the direction orthogonal to the height direction can be accurately associated with the change in capacitance.

図１０および図１１は、他の第１導電領域４４２の例を示す。図１０に示すように、第１導電領域４４２を、第１基板１２２の回路４００等に比較して深くまで形成する。例えば、第１基板１２２の第１導電領域４４２を形成する位置に、リソグラフィ及びエッチングにより第１基板１２２の深くまでホールを形成して、そのホールに第１導電領域４４２を形成する。この場合に、第１導電領域４４２は、第１基板１２２と第２基板１２３とを貼り合わせたときに回路４００、４０１間の導通を図るＴＳＶと同等の深さであることが好ましい。   10 and 11 show examples of other first conductive regions 442. FIG. As shown in FIG. 10, the first conductive region 442 is formed deeper than the circuit 400 and the like of the first substrate 122. For example, a hole is formed deep in the first substrate 122 by lithography and etching at a position where the first conductive region 442 of the first substrate 122 is formed, and the first conductive region 442 is formed in the hole. In this case, it is preferable that the first conductive region 442 has a depth equivalent to that of the TSV that achieves conduction between the circuits 400 and 401 when the first substrate 122 and the second substrate 123 are bonded to each other.

当該第１基板１２２と第２基板１２３を貼り合わせた後、ＣＭＰ（Ｃｈｅｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ）等の方法により、第１基板１２２を裏面（貼り合せ面の反対側の面）から薄化する。これにより、図１１に示すように、第１導電領域４４２を第１基板１２２の裏面に露出させる。   After the first substrate 122 and the second substrate 123 are bonded together, the first substrate 122 is thinned from the back surface (the surface opposite to the bonding surface) by a method such as CMP (Chemical Mechanical Polishing). As a result, as shown in FIG. 11, the first conductive region 442 is exposed on the back surface of the first substrate 122.

これにより、第１基板１２２の裏面に露出した第１導電領域４４２は、第１基板１２２に更に第３の基板を貼り合せた場合に、上記図１から図９の実施形態と同様に、第１基板１２２と第３の基板との位置ずれの検出に利用することができる。この場合に、第３の基板には第２基板１２３の第２導電領域４０４等と同じ位置、ピッチ、大きさの導電領域が設けられていることが好ましい。さらにこの第３の基板の導電領域もその裏面に露出させることにより、その上に貼り合わされる第４の基板との位置ずれの検出に利用することができる。同様にして、所望の枚数の重ねあわせに対して、相対位置を検出することができる。なお、図１０および図１１においては、第１導電領域４４２を形成してから第１基板１２２を薄化したが、これに代えて、第１基板１２２を薄化してから第１導電領域４４２を形成してもよい。   As a result, the first conductive region 442 exposed on the back surface of the first substrate 122 is similar to the first embodiment shown in FIGS. 1 to 9 when the third substrate is further bonded to the first substrate 122. This can be used for detecting the positional deviation between the first substrate 122 and the third substrate. In this case, the third substrate is preferably provided with a conductive region having the same position, pitch, and size as the second conductive region 404 and the like of the second substrate 123. Further, the conductive region of the third substrate is also exposed on the back surface thereof, so that it can be used for detecting a positional deviation from the fourth substrate bonded thereon. Similarly, the relative position can be detected for a desired number of overlaps. 10 and 11, the first substrate 122 is thinned after the first conductive region 442 is formed. Instead, the first conductive region 442 is thinned after the first substrate 122 is thinned. It may be formed.

以上、図１から図１１に示す実施形態によれば、第１基板１２２と第２基板１２３との位置ずれを、第１基板１２２と第２基板１２３とを近接させた状態で直接的に検出することができる。なお上記の通り第１基板１２２と第２基板１２３とを近接させた状態には、第１導電領域４０２、４４２と第２導電領域４０４とが接触した状態、第１導電領域４０２、４４２と第２導電領域４０４とが電気的特性を計測できる程度には近づいているが互いに離間した状態、および、第１基板１２２と第２基板１２３との少なくともいずれかに設けた誘電体層４３２とこれに対向した第１導電領域４０２、４４２または第２導電領域４０４とが接触した状態を含む。   As described above, according to the embodiment shown in FIGS. 1 to 11, the positional deviation between the first substrate 122 and the second substrate 123 is directly detected in a state where the first substrate 122 and the second substrate 123 are brought close to each other. can do. As described above, when the first substrate 122 and the second substrate 123 are close to each other, the first conductive regions 402 and 442 and the second conductive region 404 are in contact with each other, and the first conductive regions 402 and 442 and the second substrate 123 are in contact with each other. The two conductive regions 404 are close enough to measure the electrical characteristics but are separated from each other, and the dielectric layer 432 provided on at least one of the first substrate 122 and the second substrate 123 and This includes a state in which the opposing first conductive regions 402 and 442 or the second conductive region 404 are in contact with each other.

図１２は、積層デバイスを製造する方法の概略を示す。図１２に示すように、積層デバイスは、当該デバイスの機能・性能設計を行うステップＳ１０１、この設計ステップに基づいたマスク（レチクル）を製作するステップＳ１０２、デバイスの基材である基板を製造するステップＳ１０３、マスクのパターンを用いて露光光で基板を露光すること、及び露光された基板を現像することを含む基板処理ステップＳ１０４、上記図１から図１１による位置合わせ工程を含むデバイス組み立てステップＳ１０５、検査ステップＳ１０６等を経て製造される。なお、デバイス組み立てステップＳ１０５は、位置合わせ工程に続いて、ダイシング工程、ボンディング工程、パッケージ工程などの加工プロセスを含む。   FIG. 12 shows an outline of a method for manufacturing a laminated device. As shown in FIG. 12, in the laminated device, step S101 for performing function / performance design of the device, step S102 for manufacturing a mask (reticle) based on the design step, and step for manufacturing a substrate as a base material of the device S103, substrate processing step S104 including exposing the substrate with exposure light using a mask pattern, and developing the exposed substrate, device assembly step S105 including the alignment step according to FIGS. It is manufactured through the inspection step S106 and the like. The device assembly step S105 includes processing processes such as a dicing process, a bonding process, and a package process following the alignment process.

なお図３に示す例において、第１基板１２２と第１基板１２２より一回り大きい第２基板１２３とを貼り合せているが、大きさの関係はこれに限られない。他の例として、第１基板１２２と第２基板１２３とがほぼ同じ大きさであってもよい。この場合には第１基板１２２および第２基板１２３の一方にオリエンテーションフラットを設けて、第２導電領域４０４、４０８および第１導電領域４０２、４０６の一方を露出させる。基板を３層以上積層する場合にはオリエンテーションフラットの位置をずらすことで、いずれの基板においても導電領域が露出するようにしてもよい。   In the example illustrated in FIG. 3, the first substrate 122 and the second substrate 123 that is slightly larger than the first substrate 122 are bonded together, but the size relationship is not limited thereto. As another example, the first substrate 122 and the second substrate 123 may be approximately the same size. In this case, an orientation flat is provided on one of the first substrate 122 and the second substrate 123 to expose one of the second conductive regions 404 and 408 and the first conductive regions 402 and 406. When three or more substrates are stacked, the conductive region may be exposed in any substrate by shifting the position of the orientation flat.

さらに、基板を３層以上積層する場合に、基板の大きさを順次小さくすることにより導電領域を露出させてもよいし、大径の基板と小径の基板とを交互に積層して、大径の基板において導電領域を露出させてもよい。他の例として、基板を３層以上積層する場合に、複数の導電領域をそれぞれの基板の表裏面に露出するように設けておき、当該複数の導電領域の一部を表裏側に積層された基板に設けられた導電領域との導通に用いて、他の一部を裏面側に積層された基板の導電領域との導通に用いてもよい。   Furthermore, when laminating three or more substrates, the conductive region may be exposed by sequentially reducing the size of the substrate, or a large-diameter substrate and a small-diameter substrate are alternately laminated, The conductive region may be exposed in the substrate. As another example, when three or more layers of substrates are stacked, a plurality of conductive regions are provided so as to be exposed on the front and back surfaces of each substrate, and a part of the plurality of conductive regions is stacked on the front and back sides. The other part may be used for conduction with the conductive region provided on the substrate, and the other part may be used for conduction with the conductive region of the substrate laminated on the back surface side.

以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。   As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

特許請求の範囲、明細書、および図面中において示した装置、システム、プログラム、および方法における動作、手順、ステップ、および段階等の各処理の実行順序は、特段「より前に」、「先立って」等と明示しておらず、また、前の処理の出力を後の処理で用いるのでない限り、任意の順序で実現しうることに留意すべきである。特許請求の範囲、明細書、および図面中の動作フローに関して、便宜上「まず、」、「次に、」等を用いて説明したとしても、この順で実施することが必須であることを意味するものではない。   The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

１００ 基板貼り合せ装置、１０２ 筐体、１０４ 常温部、１０６ 高温部、１０８ 断熱壁、１１２ 基板カセット、１１４ 基板カセット、１１６ 基板カセット、１２２ 第１基板、１２３ 第２基板、１２４ 上基板ホルダ、１２５ 下基板ホルダ、１２６ プリアライナ、１２８ 基板ホルダラック、１３０ 基板取り外し部、１３２ ロボットアーム、１３４ ロボットアーム、１４０ ステージ装置、１４１ 第１ステージ、１４２ 第２ステージ、１４５ 断熱壁、１４６ シャッタ、１４８ 制御部、２２０ エアロック、２２２ シャッタ、２２４ シャッタ、２３０ ロボットアーム、２４０ 加圧部、３１０ 枠体、３１２ 天板、３１４ 支柱、３１６ 底板、３４２ 第１顕微鏡、３４４ 第２顕微鏡、３５２ ガイドレール、３５４ Ｘステージ、３５６ Ｙステージ、３６０ 昇降部、３７０ 干渉計、３７２ 変位センサー、３７４ 計測器、３７６ プローブ、４００ 回路、４０１ 回路、４０２ 第１導電領域、４０４ 第２導電領域、４０６ 第３導電領域、４０８ 第４導電領域、４１２ 第１大導電領域、４１４ 第２大導電領域、４１６ 第３大導電領域、４１８ 第４大導電領域、４３２ 誘電体層、４４２ 第１導電領域 DESCRIPTION OF SYMBOLS 100 Substrate bonding apparatus, 102 Case, 104 Normal temperature part, 106 High temperature part, 108 Heat insulation wall, 112 Substrate cassette, 114 Substrate cassette, 116 Substrate cassette, 122 First substrate, 123 Second substrate, 124 Upper substrate holder, 125 Lower substrate holder, 126 Pre-aligner, 128 Substrate holder rack, 130 Substrate removal unit, 132 Robot arm, 134 Robot arm, 140 Stage device, 141 First stage, 142 Second stage, 145 Heat insulation wall, 146 Shutter, 148 Control unit, 220 Air Lock, 222 Shutter, 224 Shutter, 230 Robot Arm, 240 Pressurizer, 310 Frame, 312 Top Plate, 314 Support, 316 Bottom Plate, 342 First Microscope, 344 Second Microscope, 352 Guide Rail, 354 X stage, 356 Y stage, 360 elevating part, 370 interferometer, 372 displacement sensor, 374 measuring instrument, 376 probe, 400 circuit, 401 circuit, 402 first conductive region, 404 second conductive region, 406 third conductive region, 408 Fourth conductive region, 412 First large conductive region, 414 Second large conductive region, 416 Third large conductive region, 418 Fourth large conductive region, 432 Dielectric layer, 442 First conductive region

Claims (11)

一の面側に第１導電領域が第１周期で複数形成された第１基板の前記一の面と、一の面側に第２導電領域を前記第１周期とは異なる第２周期で複数形成された第２基板の前記一の面と近接させるステップと、
前記第１基板の前記一の面と前記第２基板の前記一の面とを近接させた状態で、前記第１導電領域と前記第２導電領域との複数の組み合わせにおける電気的特性を測定するステップと、
前記第１導電領域と前記第２導電領域との前記複数の組み合わせ間の前記電気的特性の差に基づいて、前記第１基板と前記第２基板との相対位置を検出するステップと
を備える基板相対位置検出方法。 The first surface of the first substrate having a plurality of first conductive regions formed on one surface side in a first cycle, and the second conductive regions on a first surface side in a second cycle different from the first cycle. Making it close to the one surface of the formed second substrate;
Measuring electrical characteristics in a plurality of combinations of the first conductive region and the second conductive region in a state where the one surface of the first substrate and the one surface of the second substrate are close to each other. Steps,
Detecting a relative position between the first substrate and the second substrate based on the difference in electrical characteristics between the plurality of combinations of the first conductive region and the second conductive region. Relative position detection method. 前記近接させるステップにおいて、前記第１導電領域と前記第２導電領域とを接触させ、
前記電気的特性を測定するステップは、前記第１導電領域と前記第２導電領域との前記複数の組み合わせのそれぞれに対して直流電圧を入力して出力される電流を測定することにより、前記第１導電領域と前記第２導電領域との前記複数の組み合わせにおけるそれぞれの電気的導通の有無を検出することを含む請求項１に記載の基板相対位置検出方法。 In the step of bringing the first conductive region and the second conductive region into contact,
The step of measuring the electrical characteristics includes measuring the current output by inputting a DC voltage to each of the plurality of combinations of the first conductive region and the second conductive region. The substrate relative position detection method according to claim 1, further comprising detecting presence / absence of electrical continuity in each of the plurality of combinations of one conductive region and the second conductive region. 前記近接させるステップにおいて、前記第１基板の前記一の面と前記第２基板の前記一の面とを離間した状態で保持し、
前記電気的特性を測定するステップは、前記第１導電領域と前記第２導電領域との前記複数の組み合わせのそれぞれに対して交流電圧を入力して出力される電流を測定することにより、前記第１導電領域と前記第２導電領域との前記複数の組み合わせにおけるそれぞれの静電容量を検出する請求項１に記載の基板相対位置検出方法。 In the approaching step, the one surface of the first substrate and the one surface of the second substrate are held apart from each other;
The step of measuring the electrical characteristics includes measuring the current output by inputting an alternating voltage to each of the plurality of combinations of the first conductive region and the second conductive region. The substrate relative position detection method according to claim 1, wherein capacitances of the plurality of combinations of one conductive region and the second conductive region are detected. 前記第１導電領域および前記第２導電領域のすくなくとも一方には誘電体層が設けられており、
前記近接させるステップにおいて、前記第１導電領域と前記第２導電領域と前記誘電体層を介して接触させ、
前記電気的特性を測定するステップは、前記第１導電領域と前記第２導電領域との前記複数の組み合わせのそれぞれに対して交流電圧を入力して出力される電流を測定することにより、前記第１導電領域と前記第２導電領域との前記複数の組み合わせにおけるそれぞれの静電容量を検出する請求項１に記載の基板相対位置検出方法。 A dielectric layer is provided on at least one of the first conductive region and the second conductive region;
In the approaching step, the first conductive region, the second conductive region and the dielectric layer are brought into contact with each other,
The step of measuring the electrical characteristics includes measuring the current output by inputting an alternating voltage to each of the plurality of combinations of the first conductive region and the second conductive region. The substrate relative position detection method according to claim 1, wherein capacitances of the plurality of combinations of one conductive region and the second conductive region are detected. 前記第１基板と前記第２基板とを近接させる前に、前記第１基板の外形および前記第２基板の外形に基づいて、前記第１基板と前記第２基板とを位置合わせするステップをさらに備える請求項１から４のいずれかに記載の基板相対位置検出方法。   Aligning the first substrate and the second substrate based on the outer shape of the first substrate and the outer shape of the second substrate before bringing the first substrate and the second substrate close to each other; The substrate relative position detection method according to claim 1, further comprising: 前記位置合わせステップにおいて、前記第１基板と前記第２基板との位置ずれを、前記第１周期および前記第２周期のいずれか大きい方の周期以下の範囲に収める請求項５に記載の基板相対位置検出方法。   The relative position of the substrate according to claim 5, wherein in the alignment step, the positional deviation between the first substrate and the second substrate is within a range equal to or less than the larger one of the first period and the second period. Position detection method. 前記第１基板の前記一の面側に、前記第１導電領域よりも大きい大導電領域が形成されており、
前記第２基板の前記一の面側における、前記第１基板と近接した場合の前記大導電領域に対応した位置に、前記第２導電領域よりも大きい大導電領域が形成されており、
前記電気的特性を測定するステップに先立って、前記第１基板の前記大導電領域と前記第２基板の前記大導電領域と間の電気的特性を測定するステップと、
前記第１基板の前記大導電領域と前記第２基板の前記大導電領域と間の電気的特性により前記第１基板と前記第２基板との位置ずれを検出するステップと、
前記位置ずれを検出するステップで検出された位置ずれが前記第１周期および前記第２周期のいずれか大きい方の周期以上である場合に、その旨を警告するステップと
をさらに備える請求項１から６のいずれかに記載の基板相対位置検出方法。 A large conductive region larger than the first conductive region is formed on the one surface side of the first substrate,
A large conductive region larger than the second conductive region is formed at a position corresponding to the large conductive region when close to the first substrate on the one surface side of the second substrate,
Prior to measuring the electrical characteristics, measuring electrical characteristics between the large conductive region of the first substrate and the large conductive region of the second substrate;
Detecting a displacement between the first substrate and the second substrate based on electrical characteristics between the large conductive region of the first substrate and the large conductive region of the second substrate;
The method further comprises a step of warning when the positional deviation detected in the step of detecting the positional deviation is not less than the larger one of the first period and the second period. The substrate relative position detection method according to any one of claims 6 to 7. 前記第１導電領域を形成するステップは、
前記第１基板の他の面側に、前記第１導電領域を形成するステップと、
前記第１基板の前記一の面を薄化することにより、前記第１導電領域を前記一の面側に露出させるステップと
を有する請求項１から７のいずれかに記載の基板相対位置検出方法。 Forming the first conductive region comprises:
Forming the first conductive region on the other surface side of the first substrate;
The substrate relative position detecting method according to claim 1, further comprising: exposing the first conductive region to the one surface side by thinning the one surface of the first substrate. . 前記第１基板の前記一の面側に、前記第１導電領域が並ぶ方向に直交する方向に、第３周期で配した第３導電領域が複数形成されており、
前記第２基板の前記一の面側に、前記第２導電領域が並ぶ方向に直交する方向に、前記第３周期とは異なる第４周期で配した第４導電領域が複数形成されており、
前記電気的特性を測定するステップは、前記第１基板の前記一の面と前記第２基板の前記一の面とを近接させた状態で、前記第３導電領域と前記第４導電領域との複数の組み合わせにおける電気的特性をさらに測定し、
前記相対位置を検出するステップは、前記第１導電領域と前記第２導電領域との前記複数の組み合わせ間の前記電気的特性の差、および、前記第３導電領域と前記第４導電領域との前記複数の組み合わせ間の前記電気的特性の差に基づいて、前記第１基板と前記第２基板との相対位置を検出する請求項１に記載の基板相対位置検出方法。 A plurality of third conductive regions arranged at a third period in a direction perpendicular to the direction in which the first conductive regions are arranged on the one surface side of the first substrate;
A plurality of fourth conductive regions arranged in a fourth period different from the third period in a direction orthogonal to the direction in which the second conductive regions are arranged on the one surface side of the second substrate;
The step of measuring the electrical characteristics includes the third conductive region and the fourth conductive region in a state where the one surface of the first substrate and the one surface of the second substrate are close to each other. Further measure the electrical properties in multiple combinations,
The step of detecting the relative position includes the difference in the electrical characteristics between the plurality of combinations of the first conductive region and the second conductive region, and the third conductive region and the fourth conductive region. The substrate relative position detection method according to claim 1, wherein a relative position between the first substrate and the second substrate is detected based on a difference in the electrical characteristics between the plurality of combinations. 前記第１基板の前記一の面側に、前記第１導電領域とは異なる複数の回路パターンが形成されているとともに、前記第２基板の前記一の面側に、前記第２導電領域とは異なる、前記第１基板の前記複数の回路パターンに対応した、複数の回路パターンが形成されている請求項１から９のいずれかに記載の基板相対位置検出方法。   A plurality of circuit patterns different from the first conductive region are formed on the one surface side of the first substrate, and the second conductive region is defined on the one surface side of the second substrate. The substrate relative position detection method according to claim 1, wherein a plurality of circuit patterns corresponding to the plurality of circuit patterns of the first substrate, which are different from each other, are formed. 請求項１から１０のいずれかに記載の基板相対位置検出方法により複数の基板の相対位置を検出し、
前記相対位置に基づいて基板を貼り合わせることと
を含む積層デバイス製造方法。 The relative position of a plurality of substrates is detected by the substrate relative position detection method according to claim 1,
A laminated device manufacturing method including bonding a substrate based on the relative position.
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