JP2011187459A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2011187459A JP2011187459A JP2011144461A JP2011144461A JP2011187459A JP 2011187459 A JP2011187459 A JP 2011187459A JP 2011144461 A JP2011144461 A JP 2011144461A JP 2011144461 A JP2011144461 A JP 2011144461A JP 2011187459 A JP2011187459 A JP 2011187459A
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic compound
- light
- anode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010936 titanium Substances 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010937 tungsten Substances 0.000 claims abstract description 6
- 150000002894 organic compounds Chemical class 0.000 claims description 127
- 239000000758 substrate Substances 0.000 claims description 50
- 239000011651 chromium Substances 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000003566 sealing material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 52
- 239000010410 layer Substances 0.000 description 133
- 238000000034 method Methods 0.000 description 85
- 238000005530 etching Methods 0.000 description 67
- 239000012535 impurity Substances 0.000 description 41
- 239000007789 gas Substances 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 14
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- 239000000872 buffer Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 238000007733 ion plating Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000004952 Polyamide Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 238000001994 activation Methods 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229920002647 polyamide Polymers 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】透光性を有する陽極を有する発光装置において、陽極の抵抗値を下げるため、チタン(Ti)、アルミニウム(Al)、タンタル(Ta)、タングステン(W)、クロム(Cr)、銅(Cu)または銀(Ag)を有する導電膜を設ける。導電膜は発光領域を区分けするバンクとして機能する絶縁膜に接して設けられる。絶縁膜と導電膜は出射側からみたとき、同じ形状を有している。
【選択図】図3
Description
ゲート信号線には、1ライン分の画素TFTのゲート電極が接続されており、1ライン分全ての画素TFTを同時にONにしなくてはならないので、バッファは大きな電流を流すことが可能なものが用いられる。
なお、電流制御用TFTは、各画素にそれぞれ形成されており、電流供給線からの電流を発光素子に供給する役割を果たす。なお、ここでは図示しないが、各画素には、スイッチング用TFTや消去用TFTも形成されている。
なお、本明細書において抵抗率の低い導電性材料としては、シート抵抗値が0.01〜1Ω/□である材料をいう。具体的には、チタン(Ti)、アルミニウム(Al)、タンタル(Ta)、タングステン(W)、クロム(Cr)、銅(Cu)または銀(Ag)等の材料を用いることができる。なお、導電膜の材料および膜厚は、導電膜の膜抵抗が陽極309の膜抵抗よりも低抵抗となるように適宜選択して用いるとよい。
TaN膜はスパッタ法で形成し、Taのターゲットを用い、窒素を含む雰囲気内でスパッタする。また、W膜は、Wのターゲットを用いたスパッタ法で形成する。その他に6フッ化タングステン(WF6)を用いる熱CVD法で形成することもできる。
または砒素(As)を用いるが、ここではリン(P)を用いる。この場合、導電層615〜618がn型を付与する不純物元素に対するマスクとなり、自己整合的に高濃度不純物領域621〜624が形成される。高濃度不純物領域621〜624には1×1020〜1×1021atoms/cm3の濃度範囲でn型を付与する不純物元素を添加する。
とし、66.5Paの圧力で電極に500WのRF電力を投入する。
TFT704の説明を参照すれば良い。なお、本実施例ではシングルゲート構造としているが、ダブルゲート構造もしくはトリプルゲート構造であっても良い。
電源電位と対向電位は、本発明の発光装置に、外付けのIC等により設けられた電源によって与えられる。なお対向電位を与える電源を、本明細書では特に対向電源1116と呼ぶ。
Claims (3)
- 透光性を有する陽極と、非透光性を有する陰極と、前記陽極と前記陰極との間に配置された有機化合物層と、
前記有機化合物層からの発光領域を区分けするバンクとして機能する絶縁膜と、
前記絶縁膜に接して設けられ、前記陽極の抵抗を下げるために設けられた導電膜と、を有する発光装置であって、
前記導電膜はチタン(Ti)、アルミニウム(Al)、タンタル(Ta)、タングステン(W)、クロム(Cr)、銅(Cu)または銀(Ag)を有し、
前記絶縁膜は第1の部分と、第2の部分とを有し、前記第2の部分は、前記有機化合物層からの発光の出射側からみたとき、前記第1の部分より幅が広く、
前記発光領域において、前記有機化合物層からの発光の出射側からみたとき、前記絶縁膜と、前記導電膜とは同じ形状を有する
ことを特徴とする発光装置。 - 透光性を有する陽極と、非透光性を有する陰極と、前記陽極と前記陰極との間に配置された有機化合物層と、
前記有機化合物層からの発光領域を区分けするバンクとして機能する絶縁膜と、
前記絶縁膜に接して設けられ、前記陽極の抵抗を下げるために設けられた導電膜と、
前記有機化合物層を間に挟持する一対の基板と、
前記一対の基板間を貼り合わせるシール材と、を有する発光装置であって、
前記導電膜はチタン(Ti)、アルミニウム(Al)、タンタル(Ta)、タングステン(W)、クロム(Cr)、銅(Cu)または銀(Ag)を有し、
前記絶縁膜は第1の部分と、第2の部分とを有し、前記第2の部分は、前記有機化合物層からの発光の出射側からみたとき、前記第1の部分より幅が広く、
前記発光領域において、前記有機化合物層からの発光の出射側からみたとき、前記絶縁膜と、前記導電膜とは同じ形状を有し、
前記シール材は、前記一対の基板のFPCが配置される側において、前記陽極に接して設けられた
ことを特徴とする発光装置。 - 請求項1又は請求項2において。
前記同じ形状とは、格子状であることを特徴とする発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011144461A JP2011187459A (ja) | 2011-06-29 | 2011-06-29 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011144461A JP2011187459A (ja) | 2011-06-29 | 2011-06-29 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001091419A Division JP5137279B2 (ja) | 2001-03-27 | 2001-03-27 | 発光装置の作製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011187459A true JP2011187459A (ja) | 2011-09-22 |
Family
ID=44793466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011144461A Withdrawn JP2011187459A (ja) | 2011-06-29 | 2011-06-29 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2011187459A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742314A (zh) * | 2014-12-25 | 2016-07-06 | 精工爱普生株式会社 | 光电装置以及其制造方法、电子设备 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226076A (ja) * | 1992-02-12 | 1993-09-03 | Mitsubishi Cable Ind Ltd | El発光体 |
JPH08180974A (ja) * | 1994-12-26 | 1996-07-12 | Nippondenso Co Ltd | El素子およびその製造方法 |
JPH1165487A (ja) * | 1997-08-21 | 1999-03-05 | Seiko Epson Corp | アクティブマトリクス型表示装置 |
JPH11214161A (ja) * | 1998-01-21 | 1999-08-06 | Toppan Printing Co Ltd | エレクトロルミネッセント素子 |
JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
JP2000172198A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000228284A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000243579A (ja) * | 1999-02-17 | 2000-09-08 | Hokuriku Electric Ind Co Ltd | 有機el素子とその製造方法 |
JP2000260572A (ja) * | 1999-03-04 | 2000-09-22 | Sumitomo Electric Ind Ltd | 有機エレクトロルミネッセンスパネル |
JP2000331783A (ja) * | 1999-05-21 | 2000-11-30 | Tohoku Pioneer Corp | 有機elディスプレイパネルおよびその製造方法 |
JP2001076868A (ja) * | 1999-06-28 | 2001-03-23 | Semiconductor Energy Lab Co Ltd | El表示装置及び電子装置 |
WO2001063975A1 (fr) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Dispositif organique el et procede de fabrication |
-
2011
- 2011-06-29 JP JP2011144461A patent/JP2011187459A/ja not_active Withdrawn
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226076A (ja) * | 1992-02-12 | 1993-09-03 | Mitsubishi Cable Ind Ltd | El発光体 |
JPH08180974A (ja) * | 1994-12-26 | 1996-07-12 | Nippondenso Co Ltd | El素子およびその製造方法 |
JPH1165487A (ja) * | 1997-08-21 | 1999-03-05 | Seiko Epson Corp | アクティブマトリクス型表示装置 |
JPH11214161A (ja) * | 1998-01-21 | 1999-08-06 | Toppan Printing Co Ltd | エレクトロルミネッセント素子 |
JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
JP2000172198A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000228284A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000243579A (ja) * | 1999-02-17 | 2000-09-08 | Hokuriku Electric Ind Co Ltd | 有機el素子とその製造方法 |
JP2000260572A (ja) * | 1999-03-04 | 2000-09-22 | Sumitomo Electric Ind Ltd | 有機エレクトロルミネッセンスパネル |
JP2000331783A (ja) * | 1999-05-21 | 2000-11-30 | Tohoku Pioneer Corp | 有機elディスプレイパネルおよびその製造方法 |
JP2001076868A (ja) * | 1999-06-28 | 2001-03-23 | Semiconductor Energy Lab Co Ltd | El表示装置及び電子装置 |
WO2001063975A1 (fr) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Dispositif organique el et procede de fabrication |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742314A (zh) * | 2014-12-25 | 2016-07-06 | 精工爱普生株式会社 | 光电装置以及其制造方法、电子设备 |
JP2016122612A (ja) * | 2014-12-25 | 2016-07-07 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、電子機器 |
US9991472B2 (en) | 2014-12-25 | 2018-06-05 | Seiko Epson Corporation | Electro-optical apparatus, manufacturing method thereof, and electronic device |
US10490776B2 (en) | 2014-12-25 | 2019-11-26 | Seiko Epson Corporation | Electro-optical apparatus, manufacturing method thereof, and electronic device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3983037B2 (ja) | 発光装置およびその作製方法 | |
US8456079B2 (en) | Luminous device | |
US6956240B2 (en) | Light emitting device | |
JP4101511B2 (ja) | 発光装置及びその作製方法 | |
US7488986B2 (en) | Light emitting device | |
US7393792B2 (en) | Light-emitting device and method of fabricating the same | |
JP5137279B2 (ja) | 発光装置の作製方法 | |
JP4809544B2 (ja) | 発光装置 | |
JP4091021B2 (ja) | アクティブマトリックス型の表示装置 | |
JP5600704B2 (ja) | 発光装置 | |
JP2011187459A (ja) | 発光装置 | |
JP4244126B2 (ja) | 発光装置の作製方法 | |
JP2004079452A6 (ja) | 発光装置 | |
JP3691475B2 (ja) | 発光装置 | |
JP2004127592A6 (ja) | 発光装置の作製方法 | |
JP2004146198A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110715 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121227 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131001 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20131004 |