JP2011186138A - アレイ基板、および液晶表示装置 - Google Patents
アレイ基板、および液晶表示装置 Download PDFInfo
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- 239000011159 matrix material Substances 0.000 claims description 8
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- 150000004767 nitrides Chemical class 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】 液晶表示装置100の画素30は、走査配線2と、信号配線5と、TFTのドレイン電極51に接続された下部電極6と、この上層に保護膜7を介して配置された上部電極8とを備え、上部電極8が形成されない光透過しない領域において、下部電極6と同一電位の導電パターン55上の保護膜7に第2コンタクトホール12が設けられ、保護膜7が除去されている。
【選択図】 図2
Description
はじめに、本発明のアレイ基板、および液晶表示装置の構成を簡単に説明する。図1は、実施の形態1に係るアレイ基板、および液晶表示装置を模式的に示す平面図である。
査配線2または信号配線5から液晶15への漏れ電界を遮蔽することができるので、走査配線2または信号配線5近傍に発生しやすい漏れ電界の影響による表示不良を抑制することができる。
図4は、実施の形態2に係る液晶表示装置のアレイ基板の画素を拡大して示す平面図である。図5は、図4のB−B断面図である。
図6は、実施の形態3に係る液晶表示装置のアレイ基板の画素を拡大して示す平面図である。図7は、図6のC−C断面図である。
図8は、実施の形態3に係る液晶表示装置のアレイ基板の画素を拡大して示す平面図である。図9は、図8のD−D断面図である。
図10は、実施の形態5に係る液晶表示装置のアレイ基板の画素を拡大して示す平面図である。図11は、図10のE−E断面図である。
図12は、実施の形態6に係る液晶表示装置のアレイ基板の画素を拡大して示す平面図である。図13は、図12のF−F断面図である。
2 走査配線
3 ゲート絶縁膜
4 半導体膜
5 信号配線
6 下部電極
7 保護膜
8 上部電極
9 コンタクトホール
10 アレイ基板
11 絶縁性基板
12 第2コンタクトホール
13 カラーフィルタ
14 配向膜
15 液晶
20 対向基板
21 共通配線
30 画素
41 オーミックコンタクト膜
50 表示領域
55 導電パターン
81 隙間部
82 枝電極部
85、86 接続部
88 電極パターン
100 液晶表示装置
Claims (8)
- 基板上に、走査配線と、これに交差する信号配線によって規定される複数の画素がマトリクス状に配置された表示領域と、
前記画素は、スイッチング素子と、
該スイッチング素子と接続された下部電極と、
該下部電極上に形成された絶縁膜と、
該絶縁膜上に形成され、前記下部電極との間でフリンジ電界を発生させる上部電極とを備え、
該上部電極が形成されない光透過しない領域において、前記下部電極と同一電位の導電パターン上の前記絶縁膜にコンタクトホールが設けられ、該絶縁膜が除去されているアレイ基板。 - 前記導電パターンは、前記下部電極の一部分である請求項1に記載のアレイ基板。
- 前記コンタクトホールは、前記走査配線上に設けられている請求項1または請求項2に記載のアレイ基板。
- 前記コンタクトホールは、基準電位の共通配線上に設けられている請求項1または請求項2に記載のアレイ基板。
- 前記コンタクトホールは、前記スイッチング素子の薄膜トランジスタの前記下部電極に接続されるドレイン電極上に設けられている請求項1または請求項2に記載のアレイ基板。
- 前記コンタクトホール近傍において、前記上部電極と同一層からなる電極パターンが、前記上部電極とは電気的に分離して設けられ、前記下部電極と接続されている請求項1乃至5のいずれか1項に記載のアレイ基板。
- 前記上部電極は、隣接する前記画素の前記上部電極と接続されている請求項1乃至6のいずれか1項に記載のアレイ基板。
- 請求項1乃至7のいずれか1項に記載のアレイ基板から構成されている液晶表示装置。
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JP2010050537A JP5585127B2 (ja) | 2010-03-08 | 2010-03-08 | アレイ基板、および液晶表示装置 |
US13/040,782 US8488092B2 (en) | 2010-03-08 | 2011-03-04 | Array substrate and liquid crystal display device using the same |
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JP2010050537A JP5585127B2 (ja) | 2010-03-08 | 2010-03-08 | アレイ基板、および液晶表示装置 |
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JP2014144669A Division JP5800070B2 (ja) | 2014-07-15 | 2014-07-15 | アレイ基板、および液晶表示装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US9029072B2 (en) | 2012-02-17 | 2015-05-12 | Sharp Kabushiki Kaisha | Liquid crystal display manufacturing method |
CN113096550A (zh) * | 2021-04-08 | 2021-07-09 | Oppo广东移动通信有限公司 | 显示模组和显示设备 |
KR20220088402A (ko) * | 2013-08-28 | 2022-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
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CN102629055B (zh) * | 2011-10-24 | 2015-06-03 | 北京京东方光电科技有限公司 | 显示器件的阵列基板、彩膜基板及其制备方法 |
CN102854685A (zh) * | 2012-09-26 | 2013-01-02 | 南京中电熊猫液晶显示科技有限公司 | 一种金属氧化物边缘场开关型液晶显示面板及其制造方法 |
CN102998856B (zh) * | 2012-11-19 | 2015-03-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN203941365U (zh) * | 2014-07-09 | 2014-11-12 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及显示装置 |
KR102313362B1 (ko) * | 2014-12-02 | 2021-10-18 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 및 그 제조방법 |
EP3086170B1 (en) | 2015-04-21 | 2020-12-02 | LG Display Co., Ltd. | Liquid crystal display |
CN105161455A (zh) * | 2015-07-31 | 2015-12-16 | 深圳市华星光电技术有限公司 | 一种ffs阵列基板及其制造方法和显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954342A (ja) * | 1995-08-11 | 1997-02-25 | Nec Corp | アクティブマトリクス液晶表示パネル及びその製造方法 |
JP2008180928A (ja) * | 2007-01-25 | 2008-08-07 | Epson Imaging Devices Corp | 液晶表示装置及びその製造方法 |
JP2009128397A (ja) * | 2007-11-20 | 2009-06-11 | Epson Imaging Devices Corp | 液晶表示装置及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW387997B (en) | 1997-12-29 | 2000-04-21 | Hyundai Electronics Ind | Liquid crystal display and fabrication method |
KR100607519B1 (ko) * | 2004-05-24 | 2006-08-02 | 엘지.필립스 엘시디 주식회사 | 칼라 필터를 구비한 박막 트랜지스터 기판 및 그 제조 방법 |
JP5285280B2 (ja) * | 2008-01-07 | 2013-09-11 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置及び液晶表示装置の製造方法 |
-
2010
- 2010-03-08 JP JP2010050537A patent/JP5585127B2/ja active Active
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2011
- 2011-03-04 US US13/040,782 patent/US8488092B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954342A (ja) * | 1995-08-11 | 1997-02-25 | Nec Corp | アクティブマトリクス液晶表示パネル及びその製造方法 |
JP2008180928A (ja) * | 2007-01-25 | 2008-08-07 | Epson Imaging Devices Corp | 液晶表示装置及びその製造方法 |
JP2009128397A (ja) * | 2007-11-20 | 2009-06-11 | Epson Imaging Devices Corp | 液晶表示装置及びその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9029072B2 (en) | 2012-02-17 | 2015-05-12 | Sharp Kabushiki Kaisha | Liquid crystal display manufacturing method |
KR20220088402A (ko) * | 2013-08-28 | 2022-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11460737B2 (en) | 2013-08-28 | 2022-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a scan line that overlaps an entire region of a first semiconductor film and a second semiconductor film |
KR102515204B1 (ko) | 2013-08-28 | 2023-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11675236B2 (en) | 2013-08-28 | 2023-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising a scan line that overlaps an entire region of a semiconductor film having a channel formation region |
CN113096550A (zh) * | 2021-04-08 | 2021-07-09 | Oppo广东移动通信有限公司 | 显示模组和显示设备 |
CN113096550B (zh) * | 2021-04-08 | 2023-01-03 | Oppo广东移动通信有限公司 | 显示模组和显示设备 |
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US20110216278A1 (en) | 2011-09-08 |
JP5585127B2 (ja) | 2014-09-10 |
US8488092B2 (en) | 2013-07-16 |
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