JP2011176225A - 光学変換装置及び同装置を含む電子機器 - Google Patents
光学変換装置及び同装置を含む電子機器 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 116
- 230000003287 optical effect Effects 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 120
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000002105 nanoparticle Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 abstract description 42
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 239000011162 core material Substances 0.000 description 39
- 239000007788 liquid Substances 0.000 description 13
- 239000012686 silicon precursor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011258 core-shell material Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
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- ICSWLKDKQBNKAY-UHFFFAOYSA-N 1,1,3,3,5,5-hexamethyl-1,3,5-trisilinane Chemical compound C[Si]1(C)C[Si](C)(C)C[Si](C)(C)C1 ICSWLKDKQBNKAY-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OBSZRRSYVTXPNB-UHFFFAOYSA-N tetraphosphorus Chemical compound P12P3P1P32 OBSZRRSYVTXPNB-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
【解決手段】本発明の一態様の光電変換装置は、第1導電型基板(p型単結晶シリコン基板100)、第1の中間層(i型半導体層110または絶縁層160)、及び第2導電型半導体層(n型半導体層120)を備える。そして、第1の中間層(i型半導体層110または絶縁層160)は少なくともコアを備えた量子ドット(ナノ粒子)を含んでいる。第1導電型基板は単結晶シリコンなどの結晶半導体によって形成される。
【選択図】図1
Description
1.定義
2.実施形態1
(1)光電変換装置の構成例
(2)光電変換装置の製造方法
3.実施形態2
(1)光電変換装置の構成例
4.実施形態3
(1)光電変換装置の構成例
(2)光電変換装置の製造方法
5.本発明の特徴
6.応用例
まず、本明細書における用語を以下の通り定義する。
「上」「下」:本明細書では、理解を容易にするため、図面の上方向及び下方向をそれぞれ上及び下と呼ぶ。ただし、実際の構成においては上下が逆になっていたり、横になっていたりすることもあるが、積層関係が同様の構成についても本発明の範囲に含むものとする。
まず、本発明の光電変換装置、及び光電変換装置の製造方法に関する実施形態1について、図面を参照しながら説明する。
図1は、本実施形態1における光電変換装置の構成を示す断面図である。図1に示すように、光電変換装置は、p型(第1導電型)の半導体基板であるp型単結晶シリコン基板100、i型半導体層110、及びn型(第2導電型)の半導体層であるn型半導体層120が積層されて構成される。また、本実施形態1の光電変換装置は、n型半導体層120の上に透明電極130を備え、p型単結晶シリコン基板100の下に金属電極140を備える。また、透明電極130には複数の集電極150が電気的に接続されており、金属電極140には複数の集電極150が電気的に接続されている。
次に、図3乃至図6を参照しながら、本実施形態1の光電変換装置の製造方法について説明する。
まず、図3に示すように、p型単結晶シリコン基板100上に、量子ドット111を分散させたシリコンの前駆体液112を塗布する。塗布する方法としては、例えばスピンコート法、スプレー法、またはインクジェット法などの方法を用いることができる。前駆体液とは特定物質を得るための前段階の物質を指し、ここではi型半導体層110を形成するための液体シリコン材料を指す。シリコンの前駆体液112としては、例えば、シクロペンタシラン(Si5H10)に紫外線を照射するなどして、重合させてポリシランとしたものを有機溶媒で希釈した溶解液体を用いる。
次に、シリコンの前駆体液112を塗布したp型単結晶シリコン基板100を例えば窒素中で焼成することで熱処理を施し、シリコンの前駆体液112をアモルファスシリコン化する。これにより、図4に示すように、量子ドット113を分散状態で含有するi型半導体層110が形成される。
次に、図5に示すように、i型半導体層110上に、n型半導体層120を形成する。本工程では、まず、i型半導体層110上に黄燐(P4)などのn型不純物を加えたシリコンの前駆体液(例えば前述のポリシラン溶液)をスピンコート法で塗布する。その後、このシリコンの前駆体液に熱処理を施すことによって、n型のアモルファスシリコン層であるn型半導体層120を形成する。
次に、図6に示すように、n型半導体層120の上に透明電極130を、p型単結晶シリコン基板100の下に金属電極140を形成する。透明電極130及び金属電極140は、いずれもスパッタ法、蒸着法、またはスクリーン印刷法などの方法で形成することができる。
次に、図1に示すように、透明電極130の上及び金属電極140の下に、集電極150を形成する。集電極150は、スパッタ法またはスクリーン印刷法などの方法で形成することができる。
次に、本発明の光電変換装置に関する実施形態2について、図7を参照しながら説明する。本実施形態2は、実施形態1におけるi型半導体層110が絶縁層160になっている点で相違しており、以下においてはこの相違点を中心に説明し、実施形態1と同様の部分については説明を省略する。
図7は、本実施形態2における光電変換装置の構成を示す断面図である。図7に示すように、光電変換装置は、p型(第1導電型)の半導体基板であるp型単結晶シリコン基板100、絶縁層160、及びn型(第2導電型)の半導体層であるn型半導体層120が積層されて構成される。また、n型半導体層120の上に透明電極130を備え、p型単結晶シリコン基板100の下に金属電極140を備える。また、透明電極130には複数の集電極150が電気的に接続されており、金属電極140には複数の集電極150が電気的に接続されている。
次に、本実施形態2における光電変換装置の製造方法について説明するが、絶縁層160を形成する工程以外は実施形態1と同様であるので説明を省略する。
次に、本発明の光電変換装置、及び光電変換装置の製造方法に関する実施形態3について、図8を参照しながら説明する。本実施形態3と実施形態1とを比較すると、本実施形態3では、p型単結晶シリコン基板100の上のみならず、下にもi型半導体層170及び高濃度p型半導体層180などが形成されている点で相違する。本実施形態3のような構成の光電変換装置を、両面構造と呼ぶことがある。以下、実施形態1との相違点を中心に説明する。
図8は、本実施形態3における光電変換装置の構成を示す断面図である。図8に示すように、光電変換装置は、p型(第1導電型)の半導体基板であるp型単結晶シリコン基板100、i型半導体層110、及びn型(第2導電型)の半導体層であるn型半導体層120が積層されて構成される。さらに本実施形態3では、p型単結晶シリコン基板100の下に、i型半導体層170、及び高濃度p型(第1導電型)の半導体層である高濃度p型半導体層180が積層されて構成されている。また、n型半導体層120の上及び高濃度p型半導体層180の下にそれぞれ透明電極130及び190を備える。また、透明電極130には複数の集電極150が電気的に接続されており、透明電極190には複数の集電極150が電気的に接続されている。
次に、本実施形態3の光電変換装置の製造方法について、簡単に説明する。
ここで、本発明の特徴について具体的に説明する。
上記光電変換装置は、各種電子機器に組み込むことができる。適用できる電子機器に制限はないがその一例について説明する。
Claims (10)
- 第1導電型の半導体を含む第1導電型基板と、
前記第1導電型基板の上に形成された第1の中間層と、
前記第1の中間層の上に形成された、第2導電型の半導体を含む第2導電型半導体層と、を備え、
前記第1の中間層は、ナノ粒子を含んでおり、
前記ナノ粒子は第1材料からなるコアを備えていること、を特徴とする、
光電変換装置。 - 前記第1導電型基板は少なくとも一部が第1導電型の半導体であり、
前記第2導電型半導体層は少なくとも一部が第2導電型の半導体であることを特徴とする
請求項1に記載の光電変換装置。 - 前記ナノ粒子は、さらに、前記コアを被覆する第2材料からなるシェルを備えたことを特徴とする
請求項1または2に記載の光電変換装置。 - 前記第2材料のバンドギャップは、前記第1材料のバンドギャップよりも大きく、かつ前記第1の中間層が含む第3材料のバンドギャップよりも大きいことを特徴とする、
請求項3に記載の光電変換装置。 - 前記第1材料の吸収係数は、前記第3材料の吸収係数よりも大きいことを特徴とする、
請求項4に記載の光電変換装置。 - 前記第1導電型基板は、第1導電型の単結晶シリコンまたは多結晶シリコン基板で構成されており、
前記第3材料は、i型アモルファスシリコンで構成されており、
さらに前記第2導電型半導体層は、第2導電型のアモルファスシリコンで構成されていることを特徴とする、
請求項4または5に記載の光電変換装置。 - 前記第1の中間層は絶縁体を含む
請求項1乃至6のいずれか1項に記載の光電変換装置。 - 請求項1乃至7のいずれか1項に記載の光電変換装置を備えた電子機器。
- 第1導電型の半導体からなる第1導電型基板の上に第1の中間層を形成する工程と、
前記第1の中間層の上に第2導電型の半導体からなる第2導電型半導体層を形成する工程と、を備え、
前記第1の中間層は、第1材料からなるコアを備えたナノ粒子を含んでおり、
前記第1導電型の半導体が結晶半導体であること、を特徴とする、
光電変換装置の製造方法。 - 前記第2導電型半導体層を形成する工程において、前記コアが前記第1材料のバンドギャップより大きいバンドギャップを有する材料に接するよう形成されることを特徴とする、
請求項9に記載の光電変換装置の製造方法。
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