JP2011151413A - パターン形成方法 - Google Patents
パターン形成方法 Download PDFInfo
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- JP2011151413A JP2011151413A JP2011086064A JP2011086064A JP2011151413A JP 2011151413 A JP2011151413 A JP 2011151413A JP 2011086064 A JP2011086064 A JP 2011086064A JP 2011086064 A JP2011086064 A JP 2011086064A JP 2011151413 A JP2011151413 A JP 2011151413A
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- 238000000034 method Methods 0.000 title claims abstract description 159
- 230000007261 regionalization Effects 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 444
- 239000000758 substrate Substances 0.000 claims abstract description 437
- 150000004767 nitrides Chemical class 0.000 claims abstract description 147
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 71
- 239000012535 impurity Substances 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 238000002834 transmittance Methods 0.000 claims description 23
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 230000007547 defect Effects 0.000 claims description 13
- 239000006096 absorbing agent Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 126
- 230000008569 process Effects 0.000 abstract description 68
- 238000000206 photolithography Methods 0.000 abstract description 63
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 367
- 229910002601 GaN Inorganic materials 0.000 description 151
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 63
- 229910004298 SiO 2 Inorganic materials 0.000 description 62
- 239000007789 gas Substances 0.000 description 52
- 230000031700 light absorption Effects 0.000 description 48
- 238000000149 argon plasma sintering Methods 0.000 description 45
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 42
- 239000013078 crystal Substances 0.000 description 41
- 229910021529 ammonia Inorganic materials 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 229910052594 sapphire Inorganic materials 0.000 description 22
- 239000010980 sapphire Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 15
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- 229910001195 gallium oxide Inorganic materials 0.000 description 13
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 13
- 238000005498 polishing Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 9
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Semiconductor Lasers (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】一の面から入射した光を吸収する吸収部301が少なくとも一部分に設けられたIII 族窒化物半導体基板300における前記一の面の上に、III 族窒化物よりなる半導体層312を形成する。半導体層312の上にレジスト膜313を形成する。開口部を有するフォトマスク360を介してレジスト膜313に、III 族窒化物半導体基板300に吸収されず且つ吸収部301に吸収される露光光を照射する。レジスト膜313を現像することによって、レジストパターンを形成し、当該レジストパターンをマスクとして半導体層312に対してエッチングを行なう。
【選択図】図20
Description
以下、第1の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第2の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第2の実施形態の変形例に係る半導体基板及びその製造方法について図面を参照しながら説明する。
以下、第3の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第4の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第5の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第6の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置を製造するためのパターン形成方法について図面を参照しながら説明する。
以下、第7の実施形態に係る半導体基板及びその製造方法、並びにその半導体基板を用いた半導体装置及びその半導体装置の製造方法について図面を参照しながら説明する。
100a 凹凸
101 サファイア基板
102 シリコン基板
103 AlN層
104 酸化アルミニウム層
105 酸化ガリウム層
106 光散乱部
106a SiO2 粒
107 GaN層
108 Al0.1Ga0.9N層
109 光吸収部
109a Si層
110 第1のSi層
111 第1のレジストパターン
112 第1のGaN層
113 第2のSi層
114 第2のGaN層
150 反応管
150a ガス導入口
150b ガス排出口
151 被処理基板
152 サセプタ
153 加熱手段
160 反応管
160a 第1のガス導入口
160b 第2のガス導入口
160c ガス排出口
161 被処理基板
162 サセプタ
163 溶融状態のGa
164 皿
165 加熱手段
171 レジスト膜
171a 本来露光されるべき領域
172 フォトマスク
172a 開口部
173 入射光(露光光)
174 出射光
175 反射光
200 GaN層(GaN基板)
201 光吸収部
202 サファイア基板
203 シリコン基板
204 AlN層
300 GaN層(GaN基板)
300a 凹凸
301 光吸収部
302 ハードマスク
303 GaAs層
310 n型Al0.1Ga0.9Nクラッド層
311 量子井戸活性層
312 p型Al0.1Ga0.9Nクラッド層
312a リッジ構造
313 レジスト膜
313A レジストパターン
314 p電極
315 n電極
316 発光領域
350 反応管
350a ガス導入口
350b ガス排出口
351 サセプタ
352 加熱手段
360 フォトマスク
Claims (12)
- 一の面から入射した光を吸収する吸収部が少なくとも一部分に設けられたIII 族窒化物半導体基板における前記一の面の上に、III 族窒化物よりなる半導体層を形成する工程と、
前記半導体層の上にポジ型又はネガ型のレジスト膜を形成する工程と、
開口部を有するフォトマスクを介して前記レジスト膜に、前記III 族窒化物半導体基板に吸収されず且つ前記吸収部に吸収される露光光を照射する工程と、
前記レジスト膜を現像することによって、前記レジスト膜がポジ型の場合には前記レジスト膜における前記露光光が照射された部分を除去すると共に前記レジスト膜がネガ型の場合には前記レジスト膜における前記露光光が照射されなかった部分を除去し、それによりレジストパターンを形成する工程と、
前記レジストパターンをマスクとして前記半導体層に対してエッチングを行なう工程とを備えていることを特徴とするパターン形成方法。 - 前記吸収部の前記露光光に対する透過率は80%以下であることを特徴とする請求項1に記載のパターン形成方法。
- 前記露光光の波長は365nm又は436nmであることを特徴とする請求項2に記載のパターン形成方法。
- 前記吸収部は、前記露光光に対して前記III 族窒化物半導体基板よりも大きな吸収係数を有する材料からなることを特徴とする請求項1に記載のパターン形成方法。
- 前記材料は、前記露光光に対して互いに異なる吸収係数を有する複数の材料であることを特徴とする請求項4に記載のパターン形成方法。
- 前記材料はSi及びWのうちの少なくとも1つを含むことを特徴とする請求項4に記載のパターン形成方法。
- 前記吸収部は、前記露光光を吸収する準位を生じるように不純物が前記III 族窒化物半導体基板に添加されてなることを特徴とする請求項1に記載のパターン形成方法。
- 前記不純物はC、O、Si、S、Cl、P及びAsのうちの少なくとも1つを含むことを特徴とする請求項7に記載のパターン形成方法。
- 前記吸収部の前記露光光に対する吸収係数をαとし、前記吸収部の厚さをz0としたときに、
z0≧0.223/αの関係が成り立つことを特徴とする請求項7に記載のパターン形成方法。 - 前記吸収部は前記III 族窒化物半導体基板に点欠陥が形成されてなることを特徴とする請求項1に記載のパターン形成方法。
- 前記点欠陥は前記III 族窒化物半導体基板にプロトンを導入することにより形成されていることを特徴とする請求項10に記載のパターン形成方法。
- 前記吸収部は、前記III 族窒化物半導体基板の前記一の面に対して平行な方向に沿って不均一に分布していることを特徴とする請求項1に記載のパターン形成方法。
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JP2000101193A (ja) * | 1998-09-22 | 2000-04-07 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
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KR100791162B1 (ko) | 2008-01-02 |
TW512546B (en) | 2002-12-01 |
US20050167692A1 (en) | 2005-08-04 |
JP5363526B2 (ja) | 2013-12-11 |
US6562644B2 (en) | 2003-05-13 |
KR20020013438A (ko) | 2002-02-20 |
EP1180725A3 (en) | 2006-08-09 |
US20080105950A1 (en) | 2008-05-08 |
US20020037599A1 (en) | 2002-03-28 |
EP1180725A2 (en) | 2002-02-20 |
US7345311B2 (en) | 2008-03-18 |
US6905898B2 (en) | 2005-06-14 |
US20030183832A1 (en) | 2003-10-02 |
EP1850179A1 (en) | 2007-10-31 |
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