JP2011103367A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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JP2011103367A
JP2011103367A JP2009257628A JP2009257628A JP2011103367A JP 2011103367 A JP2011103367 A JP 2011103367A JP 2009257628 A JP2009257628 A JP 2009257628A JP 2009257628 A JP2009257628 A JP 2009257628A JP 2011103367 A JP2011103367 A JP 2011103367A
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output terminal
external output
resin case
wall
semiconductor device
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Yoshihide Okamoto
是英 岡本
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of miniaturizing a package, even when bonding terminals with each other by arc welding. <P>SOLUTION: The power semiconductor device includes a resin case 1 having a wall in a height direction, an external output terminal 2 fixed to the wall of the resin case 1 and provided with an exposed part exposed on the inner wall surface of the wall, and a transfer mold type module 3 sealed with a mold resin 21 projecting a main electrode terminal 4. The external output terminal 2 and the main electrode terminal 4 are piled up in the height direction at predetermined interval positions from the wall and bonded so as to face the exposed part of the external output terminal 2. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、電力用半導体装置に関し、特に、トランスファーモールド型モジュールの主電極端子と樹脂製ケース内に設けた外部出力端子とをアーク溶接によって接合された電力用半導体装置に関する。   The present invention relates to a power semiconductor device, and more particularly, to a power semiconductor device in which a main electrode terminal of a transfer mold type module and an external output terminal provided in a resin case are joined by arc welding.

モータ制御、業務用エアコン等のインバータ、昇圧用のコンバータ、ＮＣ制御等に用いられる電力用半導体装置において、銅やアルミ等の金属製の放熱板上にシリコン系のグリスを介してトランスファーモールド型モジュール（Ｔ−ＰＭ）の放熱面を圧接し、トランスファーモールド型モジュールの主電極端子と樹脂製のケース（以下、樹脂ケースとする）内に設けた外部出力端子とを水平方向に重ね合わせて、半田付け等によって接合された電力用半導体装置がある（例えば、特許文献１参照）。また、樹脂ケースの壁部から所定の間隔位置において、端子同士を垂直方向に重ね合わせてアーク溶接によって接合したものもある。   In power semiconductor devices used for motor control, inverters for commercial air conditioners, boost converters, NC control, etc., transfer mold type modules via silicon grease on a heat sink made of metal such as copper or aluminum The heat radiation surface of (T-PM) is pressed and the main electrode terminal of the transfer mold module and the external output terminal provided in a resin case (hereinafter referred to as a resin case) are overlapped in the horizontal direction and soldered. There is a power semiconductor device joined by attaching or the like (see, for example, Patent Document 1). In addition, there is a case where terminals are overlapped in the vertical direction and joined by arc welding at a predetermined distance from the wall of the resin case.

特開２００１−３２６３０３号公報JP 2001-326303 A

特許文献１では、端子同士が水平方向に重ね合わせて接合されているため、接合部の裏面側の接合状態が確認できないという問題がある。また、冷熱サイクル時の熱膨張によって端子の接合部分に応力がかかるという問題がある。   In patent document 1, since the terminals are overlapped and joined in the horizontal direction, there is a problem that the joining state on the back side of the joining portion cannot be confirmed. In addition, there is a problem that stress is applied to the joint portion of the terminal due to thermal expansion during the cooling / heating cycle.

また、端子同士を垂直方向に重ね合わせてアーク溶接によって接合する場合では、アーク溶接時に発生する熱によって樹脂ケースの壁部が溶融してしまい、外観が悪くなるという問題がある。このような問題の対策として、溶接部と樹脂ケースの壁部との距離をある程度離す必要があり、パッケージ（電力用半導体装置全体）の小型化に限度があった。   Further, when the terminals are overlapped in the vertical direction and joined by arc welding, there is a problem that the wall portion of the resin case is melted by heat generated during arc welding and the appearance is deteriorated. As a countermeasure for such a problem, it is necessary to increase the distance between the welded portion and the wall portion of the resin case to some extent, and there is a limit to downsizing of the package (the entire power semiconductor device).

本発明は、これらの問題を解決するためになされたものであり、端子同士をアーク溶接によって接合する場合であってもパッケージの小型化が可能な電力用半導体装置を提供することを目的とする。   The present invention has been made to solve these problems, and an object of the present invention is to provide a power semiconductor device capable of downsizing a package even when terminals are joined together by arc welding. .

上記の課題を解決するために、本発明による電力用半導体装置は、高さ方向に壁部を有する樹脂ケースと、樹脂ケースの壁部に固定され、壁部の内壁面上に露出した露出部を有する外部出力端子と、電極端子を突出させてモールド樹脂で封止された半導体モジュールとを備える電力用半導体装置であって、外部出力端子と電極端子とは、外部出力端子の露出部と対向するように、壁部から所定の間隔位置で高さ方向に重ね合わせて接合されていることを特徴とする。   In order to solve the above-described problems, a power semiconductor device according to the present invention includes a resin case having a wall portion in the height direction, and an exposed portion fixed to the wall portion of the resin case and exposed on the inner wall surface of the wall portion. A power semiconductor device comprising: an external output terminal having an electrode terminal; and a semiconductor module projecting from the electrode terminal and sealed with a mold resin, wherein the external output terminal and the electrode terminal face an exposed portion of the external output terminal As described above, it is characterized in that they are overlapped and joined in the height direction at predetermined intervals from the wall.

本発明によると、樹脂ケースの壁部に固定され、壁部の内壁面上に露出した露出部を有する外部出力端子と、電極端子を突出させてモールド樹脂で封止された半導体モジュールとを備え、外部出力端子と電極端子とは、外部出力端子の露出部と対向するように、壁部から所定の間隔位置で高さ方向に重ね合わせて接合されているため、端子同士をアーク溶接によって接合する場合であってもパッケージの小型化が可能となる。   According to the present invention, the external output terminal having an exposed portion fixed to the wall portion of the resin case and exposed on the inner wall surface of the wall portion, and the semiconductor module having the electrode terminal protruding and sealed with the mold resin are provided. The external output terminal and the electrode terminal are joined to each other by arc welding because they are overlapped and joined in the height direction at a predetermined distance from the wall so as to face the exposed part of the external output terminal. Even in this case, the package can be downsized.

本発明の実施形態１による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by Embodiment 1 of this invention. 本発明の実施形態１による樹脂ケースおよび外部出力端子の斜視図である。It is a perspective view of the resin case and external output terminal by Embodiment 1 of this invention. 本発明の実施形態２による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by Embodiment 2 of this invention. 本発明の実施形態３による樹脂ケースおよび外部出力端子の斜視図である。It is a perspective view of the resin case and external output terminal by Embodiment 3 of this invention. 本発明の実施形態４による樹脂ケースおよび外部出力端子の斜視図である。It is a perspective view of the resin case and external output terminal by Embodiment 4 of this invention. 前提技術による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by a base technology. 前提技術によるトランスファーモールド型モジュールの断面図である。It is sectional drawing of the transfer mold type module by a premise technique. 前提技術による電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power by a base technology. 前提技術による樹脂ケースおよび外部出力端子の斜視図である。It is a perspective view of the resin case and external output terminal by a base technology.

本発明の実施形態について、図面を用いて以下に説明する。   Embodiments of the present invention will be described below with reference to the drawings.

まず初めに、本発明の前提となる技術について説明する。   First, the technology that is the premise of the present invention will be described.

図６は、前提技術による電力用半導体装置の断面図であり、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）やＦＷＤｉ（Ｆｒｅｅ Ｗｈｅｅｌｉｎｇ Ｄｉｏｄｅ）等のパワーデバイス素子を搭載した２素子インバータ結線における電力用半導体装置の１相分の断面図である。図６に示すように、銅やアルミ等の放熱板１３上にシリコン系のグリス１４を介してトランスファーモールド型モジュール３の放熱面がネジまたは金属製の板によって圧接されている。そして、トランスファーモールド型モジュール３に設けられた銅等の金属からなる主電極端子４と、放熱板１３上に固定されたＰＰＳ（Ｐｏｌｙｐｈｅｎｙｌｅｎｅ ｓｕｌｆｉｄｅ）等からなる樹脂ケース１０の壁内にインサート成形によって形成された銅等の金属からなる外部出力端子１１とが、垂直方向に重ね合わせてアーク溶接によって接合部５のように接合されている。   FIG. 6 is a cross-sectional view of a power semiconductor device according to the premise technology. 1 of the power semiconductor device in a two-element inverter connection on which power device elements such as IGBT (Insulated Gate Bipolar Transistor) and FWDi (Free Wheeling Diode) are mounted. It is sectional drawing of a phase part. As shown in FIG. 6, the heat radiating surface of the transfer mold module 3 is pressed against a heat radiating plate 13 made of copper, aluminum or the like via a silicon grease 14 with screws or a metal plate. Then, it is formed by insert molding in the wall of a resin case 10 made of a metal such as copper provided on the transfer mold module 3 and made of metal such as copper and PPS (Polyphenylene sulfide) fixed on the heat sink 13. The external output terminal 11 made of a metal such as copper is overlapped in the vertical direction and joined like a joint 5 by arc welding.

図７は、前提技術によるトランスファーモールド型モジュール３の断面図である。図７に示すように、トランスファーモールド型モジュール３には半導体素子１５が２つ備えられており、各半導体素子１５には共通して主電極端子４が半田１９によって電気的に接続されている。また、一方の半導体素子１５は、Ａｌワイヤー２０によって信号端子１２と電気的に接続されている。各半導体素子１５の裏面側（図１のグリス１４側）には半田を介してヒートスプレッダ１６、絶縁シート１７、銅箔１８が順に設けられている。そして、主電極端子４および信号端子１２の一端を露出してモールド樹脂２１によって封止して形成されている。   FIG. 7 is a cross-sectional view of the transfer mold type module 3 according to the base technology. As shown in FIG. 7, the transfer mold module 3 includes two semiconductor elements 15, and the main electrode terminal 4 is electrically connected to each semiconductor element 15 by solder 19 in common. One semiconductor element 15 is electrically connected to the signal terminal 12 by an Al wire 20. A heat spreader 16, an insulating sheet 17, and a copper foil 18 are provided in this order on the back surface side (the grease 14 side in FIG. 1) of each semiconductor element 15 via solder. Then, one end of the main electrode terminal 4 and the signal terminal 12 is exposed and sealed with a mold resin 21.

図８は前提技術による電力用半導体装置の断面図であり、図９は樹脂ケース１０の一壁面および当該一壁面に埋め込まれた外部出力端子１１の斜視図である。図８に示すように、主電極端子４と外部出力端子１１との接合部５は、溶接電極２２によるアーク溶接によって接合されている。ここで、αは樹脂ケース１０の内壁と、主電極端子４に接合された外部出力端子１１との距離を示し、βは樹脂ケース１０の壁内にインサート形成された外部出力端子１１と、樹脂ケース１０の内壁との距離を示し、Ｘ１は樹脂ケース１０にインサート形成された外部出力端子１１と主電極端子４に接合された外部出力端子１１との距離を示している。なお、ここでは、グリス１４は図示していないが形成されているものとする（以下、他図においてもグリス１４は形成されているものとする）。   FIG. 8 is a cross-sectional view of the power semiconductor device according to the base technology, and FIG. 9 is a perspective view of one wall surface of the resin case 10 and the external output terminal 11 embedded in the one wall surface. As shown in FIG. 8, the joint 5 between the main electrode terminal 4 and the external output terminal 11 is joined by arc welding with the welding electrode 22. Here, α represents the distance between the inner wall of the resin case 10 and the external output terminal 11 joined to the main electrode terminal 4, and β represents the external output terminal 11 inserted in the wall of the resin case 10 and the resin The distance from the inner wall of the case 10 is indicated, and X1 indicates the distance between the external output terminal 11 inserted in the resin case 10 and the external output terminal 11 joined to the main electrode terminal 4. Here, it is assumed that the grease 14 is formed although not shown (hereinafter, the grease 14 is also formed in other drawings).

前提技術による電力用半導体装置では、主電極端子４と外部出力端子１１とが垂直（高さ）方向に重ね合わせて接合されているため、両端子の溶接部分が上方から容易に確認できる。また、冷熱サイクル時の熱膨張によって接合部分にかかる応力が軽減される。しかしながら、図８に示すように、アーク溶接時に発生する熱で樹脂ケース１０の壁部が溶融することによる外観の不良を防ぐために、接合部５は樹脂ケース１０の内壁から距離αの間隔を空けて形成する必要がある。従って、距離Ｘ１はα＋β分の間隔を設ける必要があり、パッケージの小型化に限度があった。   In the power semiconductor device according to the base technology, the main electrode terminal 4 and the external output terminal 11 are overlapped and joined in the vertical (height) direction, so that the welded portion of both terminals can be easily confirmed from above. Further, the stress applied to the joint portion is reduced by the thermal expansion during the cooling / heating cycle. However, as shown in FIG. 8, in order to prevent poor appearance due to melting of the wall portion of the resin case 10 due to heat generated during arc welding, the joint portion 5 is spaced a distance α from the inner wall of the resin case 10. Need to be formed. Therefore, it is necessary to provide an interval of α + β for the distance X1, and there is a limit to downsizing of the package.

本発明は、これらの問題を解決するためになされたものであり、以下に詳細を説明する。   The present invention has been made to solve these problems, and will be described in detail below.

〈実施形態１〉
図１は本発明の実施形態１による電力用半導体装置の断面図であり、図２は樹脂ケース１の一壁面および当該一壁面に固定された外部出力端子２の斜視図である。図１に示すように、電力用半導体装置は、垂直（高さ）方向に壁部を有する樹脂ケース１と、樹脂ケース１の壁部に固定され、壁部の内壁面上に露出した露出部を有する外部出力端子２と、主電極端子４（電極端子）を突出させてモールド樹脂２１で封止されたトランスファーモールド型モジュール３（半導体モジュール）とを備えている。なお、トランスファーモールド型モジュール３の構成は、図７に示す前提技術による構成と同様である。 <Embodiment 1>
1 is a cross-sectional view of a power semiconductor device according to Embodiment 1 of the present invention, and FIG. 2 is a perspective view of one wall surface of a resin case 1 and an external output terminal 2 fixed to the one wall surface. As shown in FIG. 1, the power semiconductor device includes a resin case 1 having a wall portion in the vertical (height) direction, and an exposed portion fixed to the wall portion of the resin case 1 and exposed on the inner wall surface of the wall portion. And a transfer mold type module 3 (semiconductor module) in which a main electrode terminal 4 (electrode terminal) protrudes and is sealed with a mold resin 21. The configuration of the transfer mold module 3 is the same as that of the base technology shown in FIG.

外部出力端子２と主電極端子４とは、外部出力端子２の露出部と対向するように、樹脂ケース１の壁部から所定の間隔位置（Ｘ２＝α）で垂直方向に重ね合わせて、溶接電極２２によるアーク溶接によって接合部５のように接合されている。このように、外部出力端子２と接合部５との距離（Ｘ２＝α）は、図８に示す前提技術による電力用半導体装置と比較すると、樹脂ケース１０の壁部から幅β分が取り除かれているため、前提技術（Ｘ１＝α＋β）よりも短くなっている。また、接合部５の近傍（アーク溶接によって高温になる範囲）において、接合部５に対向して樹脂ケース１の壁部に固定された外部出力端子２は、樹脂ケース１の壁部の内壁面上に露出して露出部を形成している。   The external output terminal 2 and the main electrode terminal 4 are overlapped in the vertical direction at a predetermined distance (X2 = α) from the wall portion of the resin case 1 so as to face the exposed portion of the external output terminal 2 and welded. Joined like the joint 5 by arc welding with the electrode 22. As described above, the distance (X2 = α) between the external output terminal 2 and the joint portion 5 is such that the width β is removed from the wall portion of the resin case 10 as compared with the power semiconductor device according to the base technology shown in FIG. Therefore, it is shorter than the base technology (X1 = α + β). In addition, the external output terminal 2 fixed to the wall portion of the resin case 1 facing the joint portion 5 in the vicinity of the joint portion 5 (in a range where the temperature becomes high by arc welding) is the inner wall surface of the wall portion of the resin case 1. Exposed to form an exposed part.

以上のことから、前提技術（図８）と比較すると、外部出力端子２と接合部５との距離が幅β分だけ短くなっているため、パッケージの小型化が可能となる。また、少なくとも接合部５の近傍において、接合部５に対向して樹脂ケース１の壁部に固定された外部出力端子２を露出させることによって、アーク溶接による樹脂ケース１の溶融を防ぐことができる。   From the above, the distance between the external output terminal 2 and the joint 5 is shortened by the width β as compared with the base technology (FIG. 8), so that the package can be downsized. Further, by exposing the external output terminal 2 fixed to the wall portion of the resin case 1 so as to face the joint portion 5 at least in the vicinity of the joint portion 5, melting of the resin case 1 due to arc welding can be prevented. .

〈実施形態２〉
図３は、本発明の実施形態２による電力用半導体装置の断面図である。図３に示すように、本実施形態２では、外部出力端子６が樹脂ケース１の壁部から外部に向かって水平（横）方向に突出して形成されていることを特徴としている。その他の構成は実施形態１と同様であるため、ここでは説明を省略する。 <Embodiment 2>
FIG. 3 is a cross-sectional view of a power semiconductor device according to Embodiment 2 of the present invention. As shown in FIG. 3, the second embodiment is characterized in that the external output terminal 6 is formed to protrude in the horizontal (lateral) direction from the wall portion of the resin case 1 toward the outside. Since other configurations are the same as those of the first embodiment, description thereof is omitted here.

図３に示すように、外部出力端子６は、溶接電極２２によるアーク溶接によって接合部５を形成する時に樹脂ケース１の溶融を回避する位置から外部に向かって水平方向に突出している。   As shown in FIG. 3, the external output terminal 6 protrudes in the horizontal direction from the position where melting of the resin case 1 is avoided when the joint portion 5 is formed by arc welding using the welding electrode 22.

以上のことから、外部出力端子６を樹脂ケース１の壁部から外部に向かって水平方向に突出して形成しているため、外部出力端子６を強固に固定することが可能となる。また、外部出力端子６の露出部により、実施形態１と同様の効果が得られる。   From the above, since the external output terminal 6 is formed so as to protrude in the horizontal direction from the wall portion of the resin case 1 to the outside, the external output terminal 6 can be firmly fixed. Further, the same effect as in the first embodiment can be obtained by the exposed portion of the external output terminal 6.

〈実施形態３〉
図４は、本発明の実施形態３による樹脂ケース１の一壁面および当該一壁面に固定された外部出力端子７の斜視図である。図４に示すように、本発明の実施形態３では、外部出力端子７の露出部が樹脂ケース１の壁面に沿ったＬ字形状であることを特徴としている。その他の構成は実施形態１と同様であるため、ここでは説明を省略する。 <Embodiment 3>
FIG. 4 is a perspective view of one wall surface of the resin case 1 according to Embodiment 3 of the present invention and the external output terminal 7 fixed to the one wall surface. As shown in FIG. 4, the third embodiment of the present invention is characterized in that the exposed portion of the external output terminal 7 is L-shaped along the wall surface of the resin case 1. Since other configurations are the same as those of the first embodiment, description thereof is omitted here.

図４に示すように、外部出力端子７は、樹脂ケース１の壁部の壁面に沿ったＬ字形状となっている。   As shown in FIG. 4, the external output terminal 7 has an L shape along the wall surface of the wall portion of the resin case 1.

以上のことから、外部出力端子７を樹脂ケース１の壁部の壁面に沿ったＬ字形状としているため、外部出力端子７を強固に固定することが可能となるとともに、外部出力端子７の位置決めが容易となる。   From the above, since the external output terminal 7 is L-shaped along the wall surface of the resin case 1, the external output terminal 7 can be firmly fixed and the external output terminal 7 is positioned. Becomes easy.

なお、外部出力端子７を実施形態２に示すように水平方向に折り曲げて形成してもよく、その場合はさらに強固に固定される。   The external output terminal 7 may be formed by bending in the horizontal direction as shown in the second embodiment, and in that case, it is more firmly fixed.

〈実施形態４〉
図５は、本発明の実施形態４による樹脂ケース１の一壁面および当該一壁面に固定された外部出力端子８の斜視図である。図５に示すように、本発明の実施形態４では、外部出力端子８の露出部は、少なくとも一箇所に樹脂ケース１の樹脂で埋め込まれた貫通孔９を有することを特徴としている。その他の構成は実施形態１と同様であるため、ここでは説明を省略する。 <Embodiment 4>
FIG. 5 is a perspective view of one wall surface of the resin case 1 and the external output terminal 8 fixed to the one wall surface according to Embodiment 4 of the present invention. As shown in FIG. 5, the fourth embodiment of the present invention is characterized in that the exposed portion of the external output terminal 8 has a through hole 9 embedded with resin of the resin case 1 in at least one place. Since other configurations are the same as those of the first embodiment, description thereof is omitted here.

図５に示すように、外部出力端子８に形成された貫通孔（カシメ用の穴）９は、外部出力端子８の設置時に樹脂ケース１の樹脂によって塞がれる。なお、貫通孔９は一箇所に形成されてもよく、複数箇所に形成されてもよい。   As shown in FIG. 5, a through hole (a caulking hole) 9 formed in the external output terminal 8 is closed by the resin of the resin case 1 when the external output terminal 8 is installed. In addition, the through-hole 9 may be formed in one place and may be formed in several places.

以上のことから、外部出力端子８の露出部の少なくとも一箇所に樹脂ケース１の樹脂で埋め込まれた貫通孔９を形成することによって、外部出力端子８を強固に固定することが可能となる。   From the above, it is possible to firmly fix the external output terminal 8 by forming the through hole 9 embedded with the resin of the resin case 1 in at least one portion of the exposed portion of the external output terminal 8.

なお、外部出力端子８を実施形態２に示すように水平方向に折り曲げて形成してもよく、その場合はさらに強固に固定される。   The external output terminal 8 may be formed by bending in the horizontal direction as shown in the second embodiment, and in that case, it is more firmly fixed.

また、外部出力端子８を実施形態３に示すようにＬ字形状にしてもよく、その場合は更に強固に固定されるとともに、外部出力端子８の位置決めが容易となる。   Further, the external output terminal 8 may be L-shaped as shown in the third embodiment. In this case, the external output terminal 8 is more firmly fixed and positioning of the external output terminal 8 is facilitated.

１ 樹脂ケース、２ 外部出力端子、３ トランスファーモールド型モジュール、４ 主電極端子、５ 接合部、６，７，８ 外部出力端子、９ 貫通孔、１０ 樹脂ケース、１１ 外部出力端子、１２ 信号端子、１３ 放熱板、１４ グリス、１５ 半導体素子、１６ ヒートスプレッダ、１７ 絶縁シート、１８ 銅箔、１９ 半田、２０ Ａｌワイヤー、２１ モールド樹脂、２２ 溶接電極。   DESCRIPTION OF SYMBOLS 1 Resin case, 2 External output terminal, 3 Transfer mold type module, 4 Main electrode terminal, 5 Junction part, 6, 7, 8 External output terminal, 9 Through hole, 10 Resin case, 11 External output terminal, 12 Signal terminal, 13 heat sink, 14 grease, 15 semiconductor element, 16 heat spreader, 17 insulating sheet, 18 copper foil, 19 solder, 20 Al wire, 21 mold resin, 22 welding electrode.

Claims (4)

高さ方向に壁部を有する樹脂ケースと、
前記樹脂ケースの前記壁部に固定され、前記壁部の内壁面上に露出した露出部を有する外部出力端子と、
電極端子を突出させてモールド樹脂で封止された半導体モジュールと、
を備える電力用半導体装置であって、
前記外部出力端子と前記電極端子とは、前記外部出力端子の前記露出部と対向するように、前記壁部から所定の間隔位置で前記高さ方向に重ね合わせて接合されていることを特徴とする、電力用半導体装置。 A resin case having a wall in the height direction;
An external output terminal having an exposed portion fixed to the wall portion of the resin case and exposed on an inner wall surface of the wall portion;
A semiconductor module having electrode terminals protruding and sealed with a mold resin;
A power semiconductor device comprising:
The external output terminal and the electrode terminal are overlapped and joined in the height direction at a predetermined distance from the wall so as to face the exposed portion of the external output terminal. A power semiconductor device. 前記外部出力端子は、前記樹脂ケースの前記壁部から外部に向かって横方向に突出して形成されることを特徴とする、請求項１に記載の電力用半導体装置。   2. The power semiconductor device according to claim 1, wherein the external output terminal is formed to project laterally from the wall portion of the resin case toward the outside. 前記外部出力端子の前記露出部は、前記壁部の壁面に沿ったＬ字形状であることを特徴とする、請求項１または２に記載の電力用半導体装置。   The power semiconductor device according to claim 1, wherein the exposed portion of the external output terminal has an L shape along a wall surface of the wall portion. 前記外部出力端子の前記露出部は、少なくとも一箇所に前記樹脂ケースの樹脂で埋め込まれた貫通孔を有することを特徴とする、請求項１ないし３のいずれかに記載の電力用半導体装置。   4. The power semiconductor device according to claim 1, wherein the exposed portion of the external output terminal has a through hole embedded with resin of the resin case in at least one place. 5.
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