JP2011097032A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP2011097032A JP2011097032A JP2010210343A JP2010210343A JP2011097032A JP 2011097032 A JP2011097032 A JP 2011097032A JP 2010210343 A JP2010210343 A JP 2010210343A JP 2010210343 A JP2010210343 A JP 2010210343A JP 2011097032 A JP2011097032 A JP 2011097032A
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- film
- oxide semiconductor
- gate electrode
- insulating film
- electrode
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】酸化物半導体をチャネル形成領域に用いたトランジスタを有する半導体装置の作製において、酸化物半導体膜を形成した後、水分、ヒドロキシ基、または水素などを吸蔵或いは吸着することができる金属、金属化合物または合金を用いた導電膜を、絶縁膜を間に挟んで酸化物半導体膜と重なるように形成する。そして、該導電膜が露出した状態で加熱処理を行うことで、導電膜の表面や内部に吸着されている水分、酸素、水素などを取り除く活性化処理を行う。
【選択図】図1
Description
半導体装置の作製方法について、ボトムゲート型の薄膜トランジスタを例に挙げ、図1及び図2を用いて説明する。
本実施の形態では、実施の形態1で示した薄膜トランジスタ111とは構造が異なるボトムコンタクト型の薄膜トランジスタを有する、半導体装置の作製方法について説明する。なお、実施の形態1と同一部分又は同様な機能を有する部分、及び工程は、実施の形態1と同様に行うことができるため、繰り返しの説明は省略する。
本実施の形態では、実施の形態1で示した薄膜トランジスタ111、実施の形態2とで示した薄膜トランジスタ211とは構造が異なる、チャネル保護膜を有するボトムゲート型の薄膜トランジスタを有する、半導体装置の作製方法について説明する。なお、実施の形態1と同一部分又は同様な機能を有する部分、及び工程は、実施の形態1と同様に行うことができるため、繰り返しの説明は省略する。
本実施の形態では、本発明の一態様に係る半導体表示装置の作製方法について、図7乃至図13を用いて説明する。
本実施の形態では、本発明の一態様に係る液晶表示装置の構成について説明する。
本実施の形態では、本発明の一態様に係る薄膜トランジスタを画素に用いた、発光装置の構成について説明する。本実施の形態では、発光素子を駆動させるためのトランジスタがn型の場合における、画素の断面構造について、図15を用いて説明する。なお図15では、第1の電極が陰極、第2の電極が陽極の場合について説明するが、第1の電極が陽極、第2の電極が陰極であっても良い。
本実施の形態では、本発明の一態様に係る液晶表示装置の構成について説明する。
101 ゲート電極
102 ゲート絶縁膜
103 酸化物半導体膜
104 酸化物半導体膜
105 ソース電極
106 ドレイン電極
107 酸化物半導体膜
108 酸化物絶縁膜
109 バックゲート電極
110 絶縁膜
111 薄膜トランジスタ
200 基板
201 ゲート電極
202 ゲート絶縁膜
203 ソース電極
204 ドレイン電極
205 酸化物半導体膜
206 酸化物半導体膜
207 酸化物絶縁膜
208 バックゲート電極
210 絶縁膜
211 薄膜トランジスタ
300 基板
301 ゲート電極
302 ゲート絶縁膜
303 酸化物半導体膜
304 酸化物半導体膜
305 チャネル保護膜
306 ソース電極
307 ドレイン電極
308 酸化物絶縁膜
309 バックゲート電極
310 絶縁膜
311 薄膜トランジスタ
400 基板
401 ゲート電極
402 ゲート絶縁膜
403 酸化物半導体膜
404 酸化物半導体膜
406 導電膜
408 容量配線
409 酸化物半導体膜
411 酸化物絶縁膜
412 バックゲート電極
413 絶縁膜
414 薄膜トランジスタ
415 画素電極
416 透明導電膜
417 透明導電膜
418 透明導電膜
419 保持容量
420 端子
421 端子
1401 薄膜トランジスタ
1402 ゲート電極
1403 ゲート絶縁膜
1404 酸化物半導体膜
1405 半導体膜
1406 導電膜
1407 酸化物絶縁膜
1408 バックゲート電極
1409 絶縁膜
1410 画素電極
1411 配向膜
1413 対向電極
1414 配向膜
1415 液晶
1416 シール材
1417 スペーサ
1601 液晶パネル
1602 拡散板
1603 プリズムシート
1604 拡散板
1605 導光板
1606 反射板
1607 光源
1608 回路基板
1609 FPC
1610 FPC
407a ソース電極
407b ドレイン電極
6031 トランジスタ
6033 発光素子
6034 電極
6035 電界発光層
6036 電極
6037 絶縁膜
6038 隔壁
6041 トランジスタ
6043 発光素子
6044 電極
6045 電界発光層
6046 電極
6047 絶縁膜
6048 隔壁
6051 トランジスタ
6053 発光素子
6054 電極
6055 電界発光層
6056 電極
6057 絶縁膜
6058 隔壁
7001 筐体
7002 表示部
7011 筐体
7012 表示部
7013 支持台
7021 筐体
7022 表示部
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
Claims (13)
- 絶縁表面上において、ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にソース電極及びドレイン電極を形成し、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上に、前記酸化物半導体膜と接する酸化物絶縁膜を形成し、
前記ゲート電極及び前記酸化物半導体膜と重なる位置において、前記酸化物絶縁膜上にバックゲート電極を形成し、
前記バックゲート電極が露出した状態で加熱処理を行い、
前記加熱処理を行った後、前記バックゲート電極上に絶縁膜を形成する半導体装置の作製方法。 - 絶縁表面上において、ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にソース電極及びドレイン電極を形成し、
前記ソース電極及び前記ドレイン電極上に酸化物半導体膜を形成し、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上に、前記酸化物半導体膜と接する酸化物絶縁膜を形成し、
前記ゲート電極及び前記酸化物半導体膜と重なる位置において、前記酸化物絶縁膜上にバックゲート電極を形成し、
前記バックゲート電極が露出した状態で加熱処理を行い、
前記加熱処理を行った後、前記バックゲート電極上に絶縁膜を形成する半導体装置の作製方法。 - 絶縁表面上において、ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にチャネル保護膜を形成し、
前記酸化物半導体膜上に、ソース電極及びドレイン電極を形成し、
前記チャネル保護膜、前記ソース電極及び前記ドレイン電極上に酸化物絶縁膜を形成し、
前記ゲート電極及び前記酸化物半導体膜と重なる位置において、前記酸化物絶縁膜上にバックゲート電極を形成し、
前記バックゲート電極が露出した状態で加熱処理を行い、
前記加熱処理を行った後、前記バックゲート電極上に絶縁膜を形成する半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか1項において、前記加熱処理は350℃以上650℃以下で行う半導体装置の作製方法。
- 請求項1乃至請求項4のいずれか1項において、前記バックゲート電極は、チタン、白金、バナジウム、ジルコニウム、ハフニウム、パラジウム、マグネシウム、ニオブまたは希土類の金属のうち、いずれか一つまたは複数を含む混合物、金属化合物または合金を有する半導体装置の作製方法。
- 請求項1乃至請求項4のいずれか1項において、前記バックゲート電極は水素吸蔵合金を有する半導体装置の作製方法。
- 請求項1乃至請求項6のいずれか1項において、前記加熱処理は、不活性ガス雰囲気下または減圧雰囲気下で行う半導体装置の作製方法。
- 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のソース電極及びドレイン電極と、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上において、前記酸化物半導体膜と接する酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は、チタン、白金、バナジウム、ジルコニウム、ハフニウム、パラジウム、マグネシウム、ニオブまたは希土類の金属のうち、いずれか一つまたは複数を含む混合物、金属化合物または合金を有する半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上のソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極上の酸化物半導体膜と、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上において、前記酸化物半導体膜と接する酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は、チタン、白金、バナジウム、ジルコニウム、ハフニウム、パラジウム、マグネシウム、ニオブまたは希土類の金属のうち、いずれか一つまたは複数を含む混合物、金属化合物または合金を有する半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のチャネル保護膜と、
前記酸化物半導体膜上のソース電極及びドレイン電極と、
前記チャネル保護膜、前記ソース電極及び前記ドレイン電極上の酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は、チタン、白金、バナジウム、ジルコニウム、ハフニウム、パラジウム、マグネシウム、ニオブまたは希土類の金属のうち、いずれか一つまたは複数を含む混合物、金属化合物または合金を有する半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のソース電極及びドレイン電極と、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上において、前記酸化物半導体膜と接する酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は水素吸蔵合金を有する半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上のソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極上の酸化物半導体膜と、
前記酸化物半導体膜、前記ソース電極及び前記ドレイン電極上において、前記酸化物半導体膜と接する酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は水素吸蔵合金を有する半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のチャネル保護膜と、
前記酸化物半導体膜上のソース電極及びドレイン電極と、
前記チャネル保護膜、前記ソース電極及び前記ドレイン電極上の酸化物絶縁膜と、
前記酸化物絶縁膜上において、前記ゲート電極及び前記酸化物半導体膜と重なるバックゲート電極とを有し、
前記バックゲート電極は水素吸蔵合金を有する半導体装置。
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TWI508288B (zh) | 2015-11-11 |
KR20120081978A (ko) | 2012-07-20 |
JP5097870B2 (ja) | 2012-12-12 |
WO2011040213A1 (en) | 2011-04-07 |
JP5631676B2 (ja) | 2014-11-26 |
US20150340508A1 (en) | 2015-11-26 |
KR101767035B1 (ko) | 2017-08-10 |
US9130043B2 (en) | 2015-09-08 |
JP2012231179A (ja) | 2012-11-22 |
TW201135929A (en) | 2011-10-16 |
US20110079777A1 (en) | 2011-04-07 |
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