JP2011040433A5 - Surface inspection apparatus and surface inspection method - Google Patents
Surface inspection apparatus and surface inspection method Download PDFInfo
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- JP2011040433A5 JP2011040433A5 JP2009183640A JP2009183640A JP2011040433A5 JP 2011040433 A5 JP2011040433 A5 JP 2011040433A5 JP 2009183640 A JP2009183640 A JP 2009183640A JP 2009183640 A JP2009183640 A JP 2009183640A JP 2011040433 A5 JP2011040433 A5 JP 2011040433A5
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本発明は、このような問題に鑑みてなされたものであり、露光装置の相対的な光学的像面を精度よく計測可能な装置および方法を提供することを目的とする。 The present invention has been made in view of such problems, and an object of the present invention is to provide an apparatus and method that can accurately measure the relative optical image plane of an exposure apparatus.
このような目的達成のため、本発明に係る表面検査装置は、露光により形成されたパターンを有する基板に照明光を照射する照明部と、前記パターンで反射した照明光を検出して検出信号を出力する検出部と、パターンを形成する時のフォーカスオフセットと該パターンからの前記検出信号の強度との相関関係に基づいて、露光状態を判定する判定部とを備えて構成される。
なお、前記照明部は、前記基板の前記パターンで回折光が発生するように、前記照明光を前記基板の表面に照射し、前記検出部は、前記基板の前記パターンで発生した前記回折光を検出して前記検出信号を出力してもよい。
また、前記照明部は、前記照明光として略直線偏光を前記基板の表面に照射し、前記検出部は、前記略直線偏光の偏光状態の変化を検出して前記検出信号を出力してもよい。
In order to achieve such an object, a surface inspection apparatus according to the present invention detects an illumination unit that irradiates illumination light onto a substrate having a pattern formed by exposure, and detects a detection signal by detecting illumination light reflected by the pattern. And a detection unit that outputs , and a determination unit that determines an exposure state based on a correlation between a focus offset when forming a pattern and the intensity of the detection signal from the pattern .
The illumination unit irradiates the surface of the substrate with the illumination light so that diffracted light is generated by the pattern of the substrate, and the detection unit applies the diffracted light generated by the pattern of the substrate. The detection signal may be output upon detection.
The illumination unit may irradiate the surface of the substrate with substantially linearly polarized light as the illumination light, and the detection unit may detect a change in the polarization state of the substantially linearly polarized light and output the detection signal. .
また、前記照明光として紫外光を用いてもよい。Further, ultraviolet light may be used as the illumination light.
また、前記相関関係は、複数のフォーカスオフセットと該フォーカスオフセットで形成された各パターンからの検出信号とに基づいてもよい。The correlation may be based on a plurality of focus offsets and detection signals from each pattern formed by the focus offsets.
また、前記相関関係が関数近似を用いて求められていてもよい。Further, the correlation may be obtained using function approximation.
また、前記判定部は、前記相関関係上で検出信号の強度が最大となるフォーカスオフセットに基づいて、前記露光状態を判定してもよい。The determination unit may determine the exposure state based on a focus offset that maximizes the intensity of the detection signal in the correlation.
また、前記判定部は、１回の露光で形成されるパターン内の複数の部分からの検出信号の強度に基づいて、前記露光状態を判定してもよい。Further, the determination unit may determine the exposure state based on the intensity of detection signals from a plurality of portions in a pattern formed by one exposure.
また、前記判定部は、前記露光状態として像面傾斜を判定してもよい。Further, the determination unit may determine an image plane inclination as the exposure state.
また、前記判定部により判定された前記露光状態を、該露光を行った露光装置に入力可能な信号に変換して出力する信号出力部をさらに備えてもよい。The signal processing unit may further include a signal output unit that converts the exposure state determined by the determination unit into a signal that can be input to the exposure apparatus that has performed the exposure and outputs the signal.
また、前記照明部は、前記照明光として略平行な光束を用いて、前記基板の前記パターンが形成された面の全面を一括照明し、前記検出部は、前記全面からの光を一括して検出してもよい。Further, the illumination unit collectively illuminates the entire surface of the substrate on which the pattern is formed using a substantially parallel light beam as the illumination light, and the detection unit collectively collects light from the entire surface. It may be detected.
また、本発明に係る表面検査方法は、露光により形成されたパターンを有する基板に照明光を照射し、前記パターンで反射した照明光を検出して検出信号を出力し、パターンを形成する時のフォーカスオフセットと該パターンからの前記検出信号の強度との相関関係に基づいて、露光状態を判定する。In the surface inspection method according to the present invention, the substrate having a pattern formed by exposure is irradiated with illumination light, the illumination light reflected by the pattern is detected, a detection signal is output, and a pattern is formed. An exposure state is determined based on the correlation between the focus offset and the intensity of the detection signal from the pattern.
なお、前記基板の前記パターンで回折光が発生するように、前記照明光を前記基板の表面に照射し、前記基板の前記パターンで発生した前記回折光を検出して前記検出信号を出力してもよい。The surface of the substrate is irradiated with the illumination light so that diffracted light is generated in the pattern of the substrate, the diffracted light generated in the pattern of the substrate is detected, and the detection signal is output. Also good.
また、前記照明光として略直線偏光を前記基板の表面に照射し、前記略直線偏光の偏光状態の変化を検出して前記検出信号を出力してもよい。Alternatively, the surface of the substrate may be irradiated with substantially linearly polarized light as the illumination light, and a change in the polarization state of the substantially linearly polarized light may be detected to output the detection signal.
また、前記照明光として紫外光を用いてもよい。Further, ultraviolet light may be used as the illumination light.
また、複数のフォーカスオフセットと該フォーカスオフセットで形成された各パターンからの検出信号とから、前記相関関係を求めてもよい。The correlation may be obtained from a plurality of focus offsets and detection signals from each pattern formed by the focus offsets.
また、関数近似を用いて前記相関関係を求めてもよい。Further, the correlation may be obtained using function approximation.
また、前記相関関係上で検出信号の強度が最大となるフォーカスオフセットに基づいて、前記露光状態を判定してもよい。Further, the exposure state may be determined based on a focus offset that maximizes the intensity of the detection signal in the correlation.
また、１回の露光で形成されるパターン内の複数の部分からの検出信号の強度に基づいて、前記露光状態を判定してもよい。Further, the exposure state may be determined based on the intensity of detection signals from a plurality of portions in a pattern formed by one exposure.
また、前記露光状態として像面傾斜を判定してもよい。Further, the image plane inclination may be determined as the exposure state.
また、前記判定した前記露光状態を、該露光を行った露光装置に入力可能な信号に変換して出力してもよい。Further, the determined exposure state may be converted into a signal that can be input to the exposure apparatus that has performed the exposure and output.
また、前記照明光として略平行な光束を用いて、前記基板の前記パターンが形成された面の全面を一括照明し、前記全面からの光を一括して検出してもよい。Further, a substantially parallel light beam may be used as the illumination light to collectively illuminate the entire surface of the substrate on which the pattern is formed, and the light from the entire surface may be detected collectively.
Claims (22)
前記パターンで反射した照明光を検出して検出信号を出力する検出部と、
パターンを形成する時のフォーカスオフセットと該パターンからの前記検出信号の強度との相関関係に基づいて、露光状態を判定する判定部とを備えて構成されることを特徴とする表面検査装置。 An illumination unit that irradiates illumination light onto a substrate having a pattern formed by exposure; and
A detection unit that detects illumination light reflected by the pattern and outputs a detection signal ;
A surface inspection apparatus comprising: a determination unit that determines an exposure state based on a correlation between a focus offset when forming a pattern and an intensity of the detection signal from the pattern .
前記検出部は、前記基板の前記パターンで発生した前記回折光を検出して前記検出信号を出力することを特徴とする請求項１に記載の表面検査装置。 The illumination unit irradiates the surface of the substrate with the illumination light so that diffracted light is generated in the pattern of the substrate,
The surface inspection apparatus according to claim 1, wherein the detection unit detects the diffracted light generated in the pattern of the substrate and outputs the detection signal .
前記検出部は、前記略直線偏光の偏光状態の変化を検出して前記検出信号を出力することを特徴とする請求項１または２に記載の表面検査装置。 The illumination unit irradiates the surface of the substrate with substantially linearly polarized light as the illumination light,
The surface inspection apparatus according to claim 1 , wherein the detection unit detects a change in a polarization state of the substantially linearly polarized light and outputs the detection signal .
前記検出部は、前記全面からの光を一括して検出することを特徴とする請求項１から１０のいずれか一項に記載の表面検査装置。The surface inspection apparatus according to claim 1, wherein the detection unit collectively detects light from the entire surface.
前記パターンで反射した照明光を検出して検出信号を出力し、Detecting the illumination light reflected by the pattern and outputting a detection signal;
パターンを形成する時のフォーカスオフセットと該パターンからの前記検出信号の強度との相関関係に基づいて、露光状態を判定することを特徴とする表面検査方法。A surface inspection method comprising: determining an exposure state based on a correlation between a focus offset when forming a pattern and an intensity of the detection signal from the pattern.
前記基板の前記パターンで発生した前記回折光を検出して前記検出信号を出力することを特徴とする請求項１２に記載の表面検査方法。The surface inspection method according to claim 12, wherein the detection signal is output by detecting the diffracted light generated in the pattern of the substrate.
前記略直線偏光の偏光状態の変化を検出して前記検出信号を出力することを特徴とする請求項１２または１３に記載の表面検査方法。The surface inspection method according to claim 12 or 13, wherein a change in a polarization state of the substantially linearly polarized light is detected and the detection signal is output.
前記全面からの光を一括して検出することを特徴とする請求項１２から２１のいずれか一項に記載の表面検査方法。The surface inspection method according to any one of claims 12 to 21, wherein light from the entire surface is collectively detected.
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| CN103283002B (en) | 2010-10-26 | 2016-06-15 | 株式会社尼康 | The manufacture method of inspection units, inspection method, exposure method and semiconductor element |
| US20140315330A1 (en) * | 2011-11-29 | 2014-10-23 | Nikon Corporation | Measurement device, measurement method, and method for manufacturing semiconductor device |
| JP2015062207A (en) * | 2012-01-18 | 2015-04-02 | 株式会社ニコン | Optical apparatus and aberration measuring method |
| JP2015088496A (en) * | 2012-02-23 | 2015-05-07 | 株式会社ニコン | Evaluation device, evaluation method and device manufacturing method |
| JP6367021B2 (en) | 2014-07-02 | 2018-08-01 | 東芝メモリ株式会社 | Exposure condition analysis method |
| US9760017B2 (en) | 2015-03-20 | 2017-09-12 | Toshiba Memory Corporation | Wafer lithography equipment |
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| JP3900601B2 (en) * | 1997-07-18 | 2007-04-04 | 株式会社ニコン | Exposure condition selection method and inspection apparatus used in the method |
| EP0985977A1 (en) * | 1998-09-11 | 2000-03-15 | Lucent Technologies Inc. | Integrated circuit device fabrication utilizing latent imagery |
| JP2002075815A (en) * | 2000-08-23 | 2002-03-15 | Sony Corp | Pattern tester and aligner control system using the same |
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