JP2011035366A - 高アスペクト比のフィーチャーへのタングステン堆積方法 - Google Patents
高アスペクト比のフィーチャーへのタングステン堆積方法 Download PDFInfo
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- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
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Abstract
【解決手段】部分的に製造された半導体基板上の高アスペクト比のフィーチャーをタングステン含有材料で充填する方法が提供される。ある実施形態においては、当該方法は高アスペクト比のフィーチャーにタングステン含有材料を部分的に充填する工程とフィーチャー空洞から部分的に充填された材料を選択的に除去する工程とを有する。これらの方法を用いて処理された基板においては、高アスペクト比のフィーチャーに充填されたタングステン含有材料のステップカバレッジが改善され、シームの大きさが低減する。
【選択図】図3
Description
シーム形成は、フィーチャー充填プロセス全体における1以上の中間的な選択除去処理によって、ある程度軽減されることが発見された。これらの除去処理のためのプロセスパラメータは、これらの処理の後で、堆積されたタングステン含有層のステップカバレッジが改善するものであってよい。一部の実施形態においては、選択的除去の結果、フィーチャー内部よりも開口付近において、それまでに堆積されたより多くの材料が除去される。
図5Aは、マルチステーション装置500の一例を示す。装置500は、プロセスチャンバー501、および処理される基板および処理が完了した基板を保持する1以上のカセット503(例えば、前面で開くユニファイドポート)を有する。チャンバー501は、複数のステーション、例えば、2台のステーション、3台のステーション、4台のステーション、5台のステーション、6台のステーション、7台のステーション、8台のステーション、10台のステーション、または、その他何台のステーションを備えてもよい。ステーションの台数は、普通はプロセス処理の複雑さと、共有環境で実行することができるこれらの処理の数に応じて選択される。図5Aは、511から516の符号が付された6台のステーションを備えるプロセスチャンバー501を示す。1つのプロセスチャンバー503を有するマルチステーション装置500内の全てのステーションは、同じ圧力環境下に置かれる。しかし、それぞれのステーションは、特定の反応分布システムと、ローカルプラズマと、図4に示されたような専用のプラズマ発生器およびペデスタルによって用いられる熱条件とを有してよい。
堆積された材料および生成されたシームの選択的除去における異なるプロセス条件の効果を確認するべく、いくつかの実験を行った。基板温度を上昇させ、エッチング液の流量を下げることにより、フィーチャー内における大量輸送が制限されたエッチングによって、フィーチャー内部よりも開口付近において、より多くの材料がエッチング除去されることが判明した。
明確に理解できるようにすることを目的として、上述の発明の詳細について説明したが、添付の請求項の範囲内で、変更および改変をすることができることは明らかである。本願発明に係るプロセス、システム、および装置を実施する多くの代替方法があることに留意すべきである。従って、本詳細な説明は、これに制限されるものではなく、例示的なものであり、本願発明はここに記載された詳細に限定されるものではない。
Claims (20)
- 部分的に製造された半導体基板に設けられた高アスペクト比のフィーチャーを充填する方法であって、
タングステン含有前駆体および還元剤をプロセスチャンバーに導入する工程と、
前記タングステン含有前駆体と前記還元剤との間の化学気相成長反応によって前記部分的に製造された半導体基板にタングステン含有材料の層を堆積し、前記堆積された堆積層で高アスペクト比の前記フィーチャーを部分的に充填する堆積工程と、
開口付近の前記堆積層の平均厚の減少が、前記フィーチャー内部における前記堆積層の平均厚の減少よりも大きくなるように前記堆積層の一部を選択的に除去して、エッチングされた層を形成する選択的除去工程と
を備える方法。 - 前記開口付近の減少が、前記フィーチャー内部の減少よりも少なくとも約10%大きい請求項1に記載の方法。
- 前記開口付近の減少が、前記フィーチャー内部の減少よりも少なくとも約25%大きい請求項1に記載の方法。
- 前記高アスペクト比のフィーチャーは、少なくとも約2のアスペクト比を有する請求項1に記載の方法。
- 前記開口付近における前記堆積層の平均厚は、前記フィーチャーの断面寸法の約5%から50%の間である請求項1に記載の方法。
- 前記堆積工程は、前記基板に先に堆積された下部層を覆うように実行され、前記開口付近における前記下部層の平均厚は、前記フィーチャー内部の前記下部層の平均厚よりも少なくとも約25%大きい請求項1に記載の方法。
- 前記選択的除去工程は、前記プロセスチャンバーにエッチング液を導入する工程と、前記エッチング液を前記堆積層と反応させる工程とを有する請求項1に記載の方法。
- 前記反応中の前記基板の温度は、少なくとも約摂氏300度である請求項7に記載の方法。
- 前記エッチング液は、大量輸送条件に対応する流量で前記チャンバーに導入される請求項7に記載の方法。
- 前記エッチング液は、リモートプラズマ発生器から前記プロセスチャンバーに導入される請求項7に記載の方法。
- 前記堆積工程を繰り返して第2の堆積層を形成する段階と、前記選択的除去工程を繰り返して第2のエッチングされた層を形成する段階とをさらに備える請求項1に記載の方法。
- 前記選択的除去工程を繰り返す場合には、それ以前の前記選択的除去工程と異なるプロセス条件で実行される請求項11に記載の方法。
- 前記開口付近における前記第2の堆積層の平均厚の減少は、前記フィーチャー内部の前記第2の堆積層の平均厚の減少よりも、少なくとも約10%は大きい請求項11に記載の方法。
- 前記タングステン含有前駆体と前記還元剤との間の化学気相成長反応によって、前記高アスペクト比のフィーチャーが閉じるまで、前記部分的に製造された半導体基板に前記タングステン含有材料を堆積する工程をさらに備える請求項1に記載の方法。
- 閉じた前記高アスペクト比のフィーチャーはシームを有し、前記高アスペクト比のフィーチャーの深さに対してフィールド領域から少なくとも約20%の位置で前記シームが終端する請求項14に記載の方法。
- 前記堆積工程および前記選択的除去工程はマルチステーション装置の異なるステーションにおいて実行される請求項1に記載の方法。
- 前記基板は、前記堆積工程の間に閉じられ、前記選択的除去工程の後にも閉じたままとなる第2のフィーチャーを有する請求項1に記載の方法。
- 前記高アスペクト比のフィーチャーは前記堆積工程の間に閉じて、前記選択的除去工程の間に開く請求項1に記載の方法。
- 部分的に製造された半導体基板に設けられた高アスペクト比のフィーチャーを充填する方法であって、
タングステン含有前駆体および還元剤をプロセスチャンバーに導入する工程と、
前記タングステン含有前駆体と前記還元剤との間の化学気相成長反応によって前記部分的に製造された半導体基板にタングステン含有材料の層を堆積し、前記堆積された堆積層で高アスペクト比の前記フィーチャーを部分的に充填する堆積工程と、
開口の付近における前記層の平均厚が前記フィーチャー内部の前記層の平均厚よりも小さくなるように、エッチング液を前記プロセスチャンバーに導入し、前記エッチング液を前記堆積層と反応させて、前記堆積層の一部を選択的に除去してエッチングされた層を形成する選択的除去工程と、
前記高アスペクト比のフィーチャーが閉じるまで、前記タングステン含有前駆体と還元剤との間の化学気相成長反応によって、前記部分的に製造された半導体基板に前記タングステン含有材料を堆積させる工程と
を備え、
前記高アスペクト比のフィーチャーは少なくとも約2のアスペクト比を有する方法。 - 部分的に製造された半導体基板に設けられた高アスペクト比のフィーチャーを充填する半導体プロセス装置であって、
前記基板を載置する1以上の堆積ステーションを有するプロセスチャンバーと、
前記基板を予め定められた温度まで加熱する加熱部と、
タングステン含有前駆体および還元剤を前記プロセスチャンバーに導入し、
前記タングステン含有前駆体と前記還元剤との間の化学気相成長反応によって、前記部分的に製造された半導体基板にタングステン含有材料の層を堆積し、前記層で前記高アスペクト比のフィーチャーを部分的に充填し、
開口の付近における前記層の平均厚が前記フィーチャー内部の前記層の平均厚よりも小さくなるように、前記堆積された前記層の一部を選択的に除去してエッチングされた層を形成するプログラム命令を有するコントローラと
を備える半導体プロセス装置。
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KR101327258B1 (ko) | 2013-11-08 |
TWI495756B (zh) | 2015-08-11 |
US8119527B1 (en) | 2012-02-21 |
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