JP2011029229A - 有機光電変換装置 - Google Patents
有機光電変換装置 Download PDFInfo
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- JP2011029229A JP2011029229A JP2009170244A JP2009170244A JP2011029229A JP 2011029229 A JP2011029229 A JP 2011029229A JP 2009170244 A JP2009170244 A JP 2009170244A JP 2009170244 A JP2009170244 A JP 2009170244A JP 2011029229 A JP2011029229 A JP 2011029229A
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- charge transfer
- semiconductor
- transfer complex
- organic
- photoelectric conversion
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Abstract
【課題を解決するための手段】電子供与性分子7と電子受容性分子8とが交互に積層されてなる電荷移動錯体半導体3を光吸収層として用いた有機光電変換装置。
【選択図】図1
Description
(1)電子供与性分子と電子受容性分子とが交互に積層されてなる電荷移動錯体半導体を光吸収層として用いた有機光電変換装置。
(2)上記電荷移動錯体半導体は、電子供与性分子と電子受容性分子の組み合わせにより、近赤外光領域に電荷移動型励起子による強い光吸収を示すことを特徴とする(1)に記載の有機光電変換装置。
(3)上記電荷移動錯体半導体は、有機半導体単結晶層、有機半導体多結晶薄膜層又は有機半導体アモルファス薄膜層もしくはそのいずれかの混合層であることを特徴とする(1)又は(2)に記載の有機光電変換装置。
(4)上記電荷移動錯体半導体には、半導体の構成分子とは種類の異なる分子からなる電荷移動錯体系金属層又は半導体層からなる電極が設けられていることを特徴とする(1)ないし(3)のいずれかに記載の有機光電変換装置。
これにより有機太陽電池の半導体層を電荷移動錯体半導体に置き換え、或いはタンデム型による既存の太陽電池との併用などによって、太陽電池のエネルギー変換効率を大幅に高効率化することが可能になる。例えば、近赤外光領域の太陽光エネルギーの有効利用により、原理的には、単接合型では15%以上、またタンデム等の多接合型では30%以上の変換効率を達成することが可能になる。
電荷移動錯体半導体は、構成分子の電子供与性や電子受容性の強さを変える分子組み替えによって、バンドギャップ・仕事関数を精密に制御した半導体層や半導体層界面の設計が可能である。
電荷移動錯体半導体による光吸収層の上下には電荷移動錯体系金属による電極2、4が形成されており、光吸収層内で生成した電荷移動型励起子を電子と正孔に高効率に分離している。取り出された電子と正孔はそれぞれ電荷取出用電極1、基板6上に形成された透明電極5を介して出力される。
本実施例は、電子供与性分子としてジベンゾテトラチアフルバレン(DBTTF)、電子受容性分子としてテトラシアノキノジメタン(TCNQ)が交互に積み重なることによって形成されたDBTTF-TCNQ電荷移動錯体単結晶を光吸収層として用いたものである。
図2にDBTTF-TCNQ電荷移動錯体半導体薄膜の吸収スペクトルを示す。近赤外光領域の1,400nm(0.8eV)付近に、電子供与性分子DBTTFから電子受容性分子TCNQへの分子間電荷移動に伴う電荷移動型励起子に由来した強い光吸収が見られている。
また本発明に係る有機光電変換装置は、太陽電池、光起電力素子以外にも光センサ等の光電変換装置にも応用できる。
特に電荷移動錯体半導体は化学的に安定で希少元素を一切含まないこと、真空を介さない溶液法での製膜が可能なこと、プラスチック上での形成も可能であるなど、大面積セルを低コストで作製するための要件をすべて満たしているため、軽量・折り曲げ可能・低価格でかつ高性能な有機太陽電池を生産する上で極めて有用である。
例えばこのような利点を活かして、衣服や鞄に装着可能な太陽電池、各種携帯機器用の太陽電池、屋内の壁紙や敷物を太陽電池に置き換えるなど生活密着型の手軽な発電装置への用途が有望である。
2 電荷移動錯体系金属による電極
3 電荷移動錯体半導体
4 電荷移動錯体系金属による電極
5 透明電極
6 基板
7 電子供与性分子
8 電子受容性分子
Claims (4)
- 電子供与性分子と電子受容性分子とが交互に積層されてなる電荷移動錯体半導体を光吸収層として用いた有機光電変換装置。
- 上記電荷移動錯体半導体は、電子供与性分子と電子受容性分子の組み合わせにより、近赤外光領域に電荷移動型励起子による強い光吸収を示すことを特徴とする請求項1に記載の有機光電変換装置。
- 上記電荷移動錯体半導体は、有機半導体単結晶層、有機半導体多結晶薄膜層又は有機半導体アモルファス薄膜層もしくはそのいずれかの混合層であることを特徴とする請求項1又は2に記載の有機光電変換装置。
- 上記電荷移動錯体半導体には、半導体の構成分子とは種類の異なる分子からなる電荷移動錯体系金属層又は半導体層からなる電極が設けられていることを特徴とする請求項1ないし3のいずれか1項に記載の有機光電変換装置。
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JP2014007053A (ja) * | 2012-06-25 | 2014-01-16 | Ricoh Co Ltd | 機能性デバイスおよびその製造方法 |
JPWO2014024581A1 (ja) * | 2012-08-09 | 2016-07-25 | ソニー株式会社 | 光電変換素子、撮像装置及び光センサ |
JP2021508415A (ja) * | 2017-12-18 | 2021-03-04 | キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー | 非フラーレン及び/又はホールスカベンジャーに基づく活性層並びにオプトエレクトロニクスデバイス |
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JPH05183175A (ja) * | 1992-01-04 | 1993-07-23 | Matsushita Giken Kk | 光スイッチング素子 |
JP2003264085A (ja) * | 2001-12-05 | 2003-09-19 | Semiconductor Energy Lab Co Ltd | 有機半導体素子、有機エレクトロルミネッセンス素子及び有機太陽電池 |
JP2006049578A (ja) * | 2004-08-04 | 2006-02-16 | National Institute Of Advanced Industrial & Technology | 有機半導体装置 |
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JPH05183175A (ja) * | 1992-01-04 | 1993-07-23 | Matsushita Giken Kk | 光スイッチング素子 |
JP2003264085A (ja) * | 2001-12-05 | 2003-09-19 | Semiconductor Energy Lab Co Ltd | 有機半導体素子、有機エレクトロルミネッセンス素子及び有機太陽電池 |
JP2006049578A (ja) * | 2004-08-04 | 2006-02-16 | National Institute Of Advanced Industrial & Technology | 有機半導体装置 |
Cited By (4)
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JP2014007053A (ja) * | 2012-06-25 | 2014-01-16 | Ricoh Co Ltd | 機能性デバイスおよびその製造方法 |
JPWO2014024581A1 (ja) * | 2012-08-09 | 2016-07-25 | ソニー株式会社 | 光電変換素子、撮像装置及び光センサ |
JP2021508415A (ja) * | 2017-12-18 | 2021-03-04 | キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー | 非フラーレン及び/又はホールスカベンジャーに基づく活性層並びにオプトエレクトロニクスデバイス |
JP7279998B2 (ja) | 2017-12-18 | 2023-05-23 | キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー | 非フラーレン及び/又はホールスカベンジャーに基づく活性層並びにオプトエレクトロニクスデバイス |
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