JP2011018797A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP2011018797A JP2011018797A JP2009162860A JP2009162860A JP2011018797A JP 2011018797 A JP2011018797 A JP 2011018797A JP 2009162860 A JP2009162860 A JP 2009162860A JP 2009162860 A JP2009162860 A JP 2009162860A JP 2011018797 A JP2011018797 A JP 2011018797A
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- insulating layer
- semiconductor chip
- semiconductor device
- conductive wire
- wiring board
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Engineering & Computer Science (AREA)
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- Wire Bonding (AREA)
Abstract
【解決手段】半導体チップ12が搭載された配線基板11を準備する。配線基板11には接続パッド17が設けられている。半導体チップ12の、電極パッド18が設けられた一の面12aは、配線基板11とは反対側に向いている。次に、半導体チップ12の、配線基板11とは反対側に向いた一の面12aに、第1の絶縁層14を形成する。次に、第1の絶縁層14上に、熱可塑性を有する第2の絶縁層15を形成する。それから、導電性ワイヤ13の一端13aを配線基板の接続パッド17に熱圧着し、導電性ワイヤ13の他端13bを半導体チップ12の電極パッド18に熱圧着するとともに、熱圧着する際に発せられる熱によって軟化した第2の絶縁層15に、導電性ワイヤ13の一端13aと他端13bとの間の一部を埋め込む。
【選択図】図4
Description
11 配線基板
11a 基材
11b 保護膜
11c 配線パターン
12 半導体チップ
12a 半導体チップの一の面
13,57,73 導電性ワイヤ
13a 導電性ワイヤの一端
13b 導電性ワイヤの他端
14,84 第1の絶縁層
15,85 第2の絶縁層
16,56 封止体
17,59 接続パッド
18,58 電極パッド
19 金属バンプ
20,54,55,63 接合部材
21 ランド
22 導電性ボール
31 マウントツール
32 ダイシングブレード
33 ダイシングテープ
34 ダイシングライン
35 製品エリア
41 キャピラリ
51a 配線基板の開口部
52 第1の半導体チップ
53 第2の半導体チップ
91 配線基板の一の面
92 配線基板の他の面
Claims (25)
- 接続パッドが設けられた配線基板であって、半導体チップの、電極パッドが設けられた一の面が前記配線基板とは反対側に向くように、前記半導体チップが搭載された前記配線基板を準備するステップと、
前記半導体チップの、前記配線基板とは反対側に向いた前記一の面に、第1の絶縁層を形成するステップと、
前記第1の絶縁層上に、熱可塑性を有する第2の絶縁層を形成するステップと、
前記導電性ワイヤの一端を前記配線基板の接続パッドに熱圧着し、前記導電性ワイヤの他端を前記半導体チップの前記電極パッドに熱圧着するとともに、熱圧着する際に発せられる熱によって軟化した前記第2の絶縁層に、前記導電性ワイヤの前記一端と前記他端との間の一部を埋め込むワイヤボンディングステップと、を有する、半導体装置の製造方法。 - 前記第1の絶縁層は熱硬化性の樹脂からなり、
前記ワイヤボンディングステップにおいて、熱圧着する際に発せられる前記熱によって前記第1の絶縁層を硬化させる、請求項1に記載の半導体装置の製造方法。 - 前記第1の絶縁層の硬化温度は、前記第2の絶縁層の軟化温度よりも低い、請求項2に記載の半導体装置の製造方法。
- 前記ワイヤボンディングステップ中に、前記第2の絶縁層を、前記第2の絶縁層の軟化温度以上に加熱する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 前記ワイヤボンディングステップ中に、前記導電性ワイヤの温度を、前記第2の絶縁層の軟化温度以上に加熱する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 前記第1の絶縁層および前記第2の絶縁層を、前記半導体チップの前記一の面の周辺部に形成する、請求項1から5のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体チップの前記電極パッドは、前記半導体チップの前記一の面の中央部に配されている、請求項6に記載の半導体装置の製造方法。
- 前記ワイヤボンディングステップにおいて、前記導電性ワイヤは、前記配線基板の前記接続パッドから前記第2の絶縁層に向かって延ばされ、前記第2の絶縁層を通して、前記半導体チップの前記電極パッドに向かって延ばされる、請求項7に記載の半導体装置。
- 前記ワイヤボンディングステップにおいて、前記導電性ワイヤは、前記半導体チップの前記電極パッドから前記第2の絶縁層に向かって延ばされ、前記第2の絶縁層を通して、前記配線基板の前記接続パッドに向かって延ばされる、請求項7に記載の半導体装置。
- 前記ワイヤボンディングステップの前に、前記半導体チップの前記電極パッド上に、金属バンプを形成し、
前記第2の絶縁層を、前記電極パッドの高さよりも高くなるように形成する、請求項1から9のいずれか1項に記載の半導体装置の製造方法。 - 前記半導体チップは、絶縁性の接合部材を介して前記配線基板に接合されている、請求項1から10のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体チップは、別の半導体チップを介して前記配線基板に接合されている、請求項1から10のいずれか1項に記載の半導体装置の製造方法。
- 少なくとも前記半導体チップおよび前記導電性ワイヤを、絶縁性の封止体で覆うステップをさらに有する、請求項1から12に記載の半導体装置の製造方法。
- 接続パッドが設けられた配線基板と、
電極パッドが設けられた半導体チップと、を有し、
一端が前記配線基板の前記接続パッドに接続され、他端が前記半導体チップの前記電極パッドに接続されている導電性ワイヤと、
前記半導体チップの、前記電極パッドが設けられた一の面が前記配線基板とは反対側に向くように、前記半導体チップが前記配線基板に搭載されている半導体装置であって、
前記半導体チップの、前記配線基板とは反対側に向いた前記一の面に、第1の絶縁層が形成されており、
前記第1の絶縁層上に、熱可塑性を有する第2の絶縁層が形成されており、
前記導電性ワイヤの前記一端と前記他端との間の一部が前記第2の絶縁層に埋まっている、半導体装置。 - 前記第1の絶縁層は熱硬化性の樹脂からなり、
前記第1の絶縁層の硬化温度は、前記第2の絶縁層の軟化温度よりも低い、請求項14に記載の半導体装置。 - 前記第1の絶縁層および前記第2の絶縁層は、前記半導体チップの前記一の面の周辺部に形成されている、請求項14または15に記載の半導体装置。
- 前記半導体チップの前記電極パッドは、前記半導体チップの前記一の面の中央部に配されている、請求項16に記載の半導体装置。
- 前記導電性ワイヤは、前記前記接続パッドから、前記第2の絶縁層に向かって延び、前記第2の絶縁層内を通って、前記半導体チップの前記電極パッドに向かって延びている、請求項17に記載の半導体装置。
- 前記半導体チップの前記電極パッド上に、金属バンプが形成されており、
前記第2の絶縁層の高さが、前記電極パッドの高さよりも高い、請求項14から18のいずれか1項に記載の半導体装置。 - 前記半導体チップは、絶縁性の接合部材を介して前記配線基板に接合されている、請求項14から19のいずれか1項に記載の半導体装置。
- 前記半導体チップは、別の半導体チップを介して前記配線基板に接合されている、請求項14から19のいずれか1項に記載の半導体装置。
- 前記半導体チップ上に、絶縁性の接合部材を介してさらに別の半導体チップが搭載されている、請求項14から21のいずれか1項に記載の半導体装置。
- 少なくとも前記半導体チップおよび前記導電性ワイヤが、絶縁性の封止体で覆われている、請求項14から22に記載の半導体装置。
- 前記半導体チップの前記電極パッドと前記配線基板の前記接続パッドとを接続する導電性ワイヤが複数設けられており、
前記第2の絶縁層に埋まっている前記導電性ワイヤの他に、前記第2の絶縁層上に配された別の導電性ワイヤを有している、請求項14から23に記載の半導体装置。 - 前記第2の絶縁層上に第3の絶縁層が形成されており、
前記第3の絶縁層上に、熱可塑性を有する第4の絶縁層が形成されており、
前記半導体チップの前記電極パッドと前記配線基板の前記接続パッドとを接続する導電性ワイヤが複数設けられており、
前記第2の絶縁層に埋まっている前記導電性ワイヤの他に、前記第4の絶縁層に埋まっている別の導電性ワイヤを有している、請求項14から23に記載の半導体装置。
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JPH11135539A (ja) * | 1997-10-28 | 1999-05-21 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
JP2004072009A (ja) * | 2002-08-09 | 2004-03-04 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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