JP2011007789A - 一体型直接変換式検出器モジュール - Google Patents
一体型直接変換式検出器モジュール Download PDFInfo
- Publication number
- JP2011007789A JP2011007789A JP2010141145A JP2010141145A JP2011007789A JP 2011007789 A JP2011007789 A JP 2011007789A JP 2010141145 A JP2010141145 A JP 2010141145A JP 2010141145 A JP2010141145 A JP 2010141145A JP 2011007789 A JP2011007789 A JP 2011007789A
- Authority
- JP
- Japan
- Prior art keywords
- imaging
- sensor array
- support structure
- imaging sensor
- direct conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 40
- 238000003384 imaging method Methods 0.000 claims abstract description 131
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 229910000679 solder Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229920001169 thermoplastic Polymers 0.000 claims description 6
- 239000004416 thermosoftening plastic Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000013170 computed tomography imaging Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】検出器モジュール(50)が、入射したフォトンを電気信号へ変換する直接変換結晶(52)であって、第一の表面に堆積した陽極層(56)及び第二の表面に堆積した陰極層(62)を有する直接変換結晶(52)と、陽極層(56)に堆積した再分配層(58)であって、直接変換結晶(52)のパッド型アレイのレイアウトを予め決められたリード・パターンに合わせるように構成されている再分配層(58)と、直接変換結晶(52)と電気的に連絡している集積回路(60)と、撮像モジュール(50)と他のレベルのインタコネクトとの間に接続を設けるように再分配層(58)に接続されている複数の入出力電気経路とを含んでいる。
【選択図】図5
Description
11 検出器アセンブリ
12 ガントリ
14 X線源
16 X線ビーム
18 コリメータ・アセンブリ
20 検出器モジュール
22 患者
24 回転中心
26 制御機構
32 データ取得システム
40 撮像装置
42 検出器結晶
44 セラミック基材
46 集積回路
48 取り付け手段
50 撮像モジュール
52 直接変換結晶
54 結晶面
56 陽極層
58 再分配層
60 集積回路
62 陰極層
64 再分配パッド
64p 再分配周辺パッド
66 ピグテイル
68 放熱用界面パッド
70 撮像センサ・アレイ
72 支持構造
72s 装着面
74 導体用貫通開口
76 熱可塑性伝導性接着剤
78 外側層
80 撮像モジュール
82 ワイヤ・ボンド
84 再分配層
86 再分配パッド
90 撮像モジュール
92 再分配層
94 球状又は柱状格子アレイ・モジュール
96 はんだインタコネクト
98 再分配パッド
98p 再分配周辺パッド
100 撮像モジュール
102 再分配層
104 球状又は柱状格子アレイ・モジュール
106 サブアセンブリ
110 撮像センサ・アレイ
112 撮像モジュール
114 基材
120 撮像センサ・アレイ
122 撮像モジュール
124 基材
130 撮像センサ・アレイ
132 撮像モジュール
134 基材
140 撮像モジュール
142 直接変換結晶
144 陰極層
146 集積回路
148 再分配層
152 はんだ球
154 はんだ球パッド
156 周辺パッド
158 支持構造
160 撮像センサ・アレイ
162 はんだ球
170 撮像センサ・アレイ
172 支持構造
174 放熱用界面パッド
176 放熱ビア
178 ヒート・シンク
182 金属皮膜付き弾性球
184 内部
186 外側皮膜
188 伝導性接着剤
192 Au皮膜付き銅球
194 銅内部
196 外側皮膜
Claims (10)
- 支持構造(72)と、
該支持構造(72)に取り付けられた複数の撮像モジュール(50、80、90、100)であって、当該撮像モジュールの少なくとも一つが直接変換結晶(52)の上の陽極層(56)に取り付けられた再分配層(58)を含んでいる、複数の撮像モジュール(50、80、90、100)と、
熱可塑性伝導性接着剤(76)により前記複数の撮像モジュールに重ねて取り付けられた外側層(78)と、
前記撮像センサ・アレイ(70)と第二レベルの支持構造との間に接続を設けるように前記撮像モジュールに接続された複数の入出力電気経路と
を備えた撮像センサ・アレイ(70、160、170)。 - 前記撮像モジュール(50)の少なくとも一つが、ルーティング基材、はんだ付けリード、フリップ・チップ取り付け、金属皮膜付き弾性球(182)、柱状格子アレイ・モジュール、及びワイヤ・ボンドの少なくとも一つにより前記再分配層(58)に取り付けられた集積回路(60)を含んでいる、請求項1に記載の撮像センサ・アレイ(70)。
- 前記入出力電気経路の少なくとも一つが、実質的に80℃〜160℃の範囲内にある組み立て温度を有する複数の面アレイ球状インタコネクト構成を含んでいる、請求項1又は請求項2に記載の撮像センサ・アレイ(70)。
- 前記複数の面アレイ球状インタコネクト構成は、スズ、ビスマス及び鉛を含有する三元合金により前記第二レベルの支持構造に取り付けられた複数の合金はんだ球(152)を含んでいる、請求項1〜3の何れか一項に記載の撮像センサ・アレイ(70)。
- 前記撮像モジュール(140)の一つと前記支持構造(172)との間に配設された少なくとも一つの放熱用界面パッド(174)をさらに含んでいる請求項1〜3の何れか一項に記載の撮像センサ・アレイ(70)。
- 前記支持構造及び前記第二レベルの支持構造の少なくとも一方が、熱膨脹率の小さい物質を含んでいる、請求項1に記載の撮像センサ・アレイ(70)。
- 前記支持構造(72)及び前記第二レベルの支持構造の少なくとも一方が銅レールを含んでいる、請求項1に記載の撮像センサ・アレイ(70)。
- 前記支持構造(72)は、前記撮像センサ・アレイと前記第二レベルの支持構造との間に前記入出力電気経路を介して接続を設ける少なくとも一つの導体用貫通開口(74)を含んでいる、請求項1〜4の何れか一項に記載の撮像センサ・アレイ(70)。
- 前記支持構造は、前記撮像センサ・アレイからの熱蓄積の除去を助ける熱伝導性経路を設ける少なくとも一つの放熱ビア(176)を含んでいる、請求項1〜4の何れか一項に記載の撮像センサ・アレイ(70)。
- 前記少なくとも一つの放熱ビア(176)の近傍に配設されたヒート・シンク(178)をさらに含んでいる請求項9に記載の撮像センサ・アレイ(70)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/494,257 US20100327173A1 (en) | 2009-06-29 | 2009-06-29 | Integrated Direct Conversion Detector Module |
US12/494,257 | 2009-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011007789A true JP2011007789A (ja) | 2011-01-13 |
JP5698472B2 JP5698472B2 (ja) | 2015-04-08 |
Family
ID=43379665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010141145A Active JP5698472B2 (ja) | 2009-06-29 | 2010-06-22 | 一体型直接変換式検出器モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100327173A1 (ja) |
JP (1) | JP5698472B2 (ja) |
IL (1) | IL206597A0 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6126758B1 (ja) * | 2014-10-31 | 2017-05-10 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 放射線信号を検出するためのセンサ装置及び画像化システム |
JP2017525938A (ja) * | 2015-01-15 | 2017-09-07 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 撮像検出器モジュールアセンブリ |
JP2018050896A (ja) * | 2016-09-28 | 2018-04-05 | キヤノンメディカルシステムズ株式会社 | X線検出器及びx線ct装置 |
JP2018512599A (ja) * | 2015-04-07 | 2018-05-17 | シェンゼン・エクスペクトビジョン・テクノロジー・カンパニー・リミテッド | 半導体x線検出器の製造方法 |
JP2018533723A (ja) * | 2015-09-24 | 2018-11-15 | プリズマティック、センサーズ、アクチボラグPrismatic Sensors Ab | モジュール式x線検出器 |
JP2019523402A (ja) * | 2016-07-14 | 2019-08-22 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 検出器モジュール、検出器、イメージング装置及び検出器モジュールの製造方法 |
JP2020507070A (ja) * | 2017-01-27 | 2020-03-05 | ディテクション テクノロジー オイ | 放射線検出器パネルアセンブリ構造 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9753157B2 (en) | 2014-09-26 | 2017-09-05 | Koninklijke Philips N.V. | Radiation detector with heating device |
US10181493B2 (en) * | 2015-02-06 | 2019-01-15 | Analogic Corporation | Radiation detector system of radiation imaging modality |
EP3428692B1 (de) * | 2017-07-10 | 2021-03-10 | Siemens Healthcare GmbH | Röntgendetektor mit zwischeneinheit und auswerteebene |
US20210069749A1 (en) * | 2019-09-09 | 2021-03-11 | GE Precision Healthcare LLC | Ultrasound Transducer Array Architecture And Method of Manufacture |
EP3839575A1 (en) | 2019-12-17 | 2021-06-23 | Koninklijke Philips N.V. | Photon counting detector |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002523786A (ja) * | 1998-08-28 | 2002-07-30 | ディジラッド コーポレーション | ダウンコンバーション素子を備えた半導体放射線検出器 |
JP2006521699A (ja) * | 2003-03-28 | 2006-09-21 | ゲルコアー リミテッド ライアビリティ カンパニー | Ledパワー・パッケージ |
JP2007155563A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線画像検出装置 |
JP2007155564A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線検出器および放射線画像検出装置 |
JP2009078143A (ja) * | 2007-09-26 | 2009-04-16 | General Electric Co <Ge> | エネルギ識別データを自在にまとめる方法及び装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348728B1 (en) * | 2000-01-28 | 2002-02-19 | Fujitsu Limited | Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer |
US6798057B2 (en) * | 2002-11-05 | 2004-09-28 | Micron Technology, Inc. | Thin stacked ball-grid array package |
US7223981B1 (en) * | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
US7560304B2 (en) * | 2006-12-28 | 2009-07-14 | Sandisk Corporation | Method of making a semiconductor device having multiple die redistribution layer |
US7486764B2 (en) * | 2007-01-23 | 2009-02-03 | General Electric Company | Method and apparatus to reduce charge sharing in pixellated energy discriminating detectors |
-
2009
- 2009-06-29 US US12/494,257 patent/US20100327173A1/en not_active Abandoned
-
2010
- 2010-06-22 JP JP2010141145A patent/JP5698472B2/ja active Active
- 2010-06-24 IL IL206597A patent/IL206597A0/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002523786A (ja) * | 1998-08-28 | 2002-07-30 | ディジラッド コーポレーション | ダウンコンバーション素子を備えた半導体放射線検出器 |
JP2006521699A (ja) * | 2003-03-28 | 2006-09-21 | ゲルコアー リミテッド ライアビリティ カンパニー | Ledパワー・パッケージ |
JP2007155563A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線画像検出装置 |
JP2007155564A (ja) * | 2005-12-07 | 2007-06-21 | Acrorad Co Ltd | 放射線検出器および放射線画像検出装置 |
JP2009078143A (ja) * | 2007-09-26 | 2009-04-16 | General Electric Co <Ge> | エネルギ識別データを自在にまとめる方法及び装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6126758B1 (ja) * | 2014-10-31 | 2017-05-10 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 放射線信号を検出するためのセンサ装置及び画像化システム |
JP2017513588A (ja) * | 2014-10-31 | 2017-06-01 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 放射線信号を検出するためのセンサ装置及び画像化システム |
JP2017525938A (ja) * | 2015-01-15 | 2017-09-07 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 撮像検出器モジュールアセンブリ |
JP2018512599A (ja) * | 2015-04-07 | 2018-05-17 | シェンゼン・エクスペクトビジョン・テクノロジー・カンパニー・リミテッド | 半導体x線検出器の製造方法 |
US10228473B2 (en) | 2015-04-07 | 2019-03-12 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making semiconductor X-ray detectors |
US10712456B2 (en) | 2015-04-07 | 2020-07-14 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making semiconductor X-ray detectors |
JP2018533723A (ja) * | 2015-09-24 | 2018-11-15 | プリズマティック、センサーズ、アクチボラグPrismatic Sensors Ab | モジュール式x線検出器 |
JP2019523402A (ja) * | 2016-07-14 | 2019-08-22 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 検出器モジュール、検出器、イメージング装置及び検出器モジュールの製造方法 |
JP2018050896A (ja) * | 2016-09-28 | 2018-04-05 | キヤノンメディカルシステムズ株式会社 | X線検出器及びx線ct装置 |
JP2020507070A (ja) * | 2017-01-27 | 2020-03-05 | ディテクション テクノロジー オイ | 放射線検出器パネルアセンブリ構造 |
JP7023286B2 (ja) | 2017-01-27 | 2022-02-21 | ディテクション テクノロジー オイ | 放射線検出器パネルアセンブリ構造 |
Also Published As
Publication number | Publication date |
---|---|
IL206597A0 (en) | 2010-12-30 |
US20100327173A1 (en) | 2010-12-30 |
JP5698472B2 (ja) | 2015-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5698472B2 (ja) | 一体型直接変換式検出器モジュール | |
EP1411833B1 (en) | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same | |
US8710448B2 (en) | Radiation detector array | |
JP5432448B2 (ja) | 計算機式断層写真法検出器モジュール構成 | |
US10488532B2 (en) | Detector unit for detector array of radiation imaging modality | |
JP2001318155A (ja) | 放射線検出器、およびx線ct装置 | |
JP2006504258A (ja) | 回路基板およびその製造方法 | |
JP2009544011A (ja) | 2コンポーネントフォトダイオード検出器 | |
US20060071173A1 (en) | Module assembly for multiple die back-illuminated diode | |
NL2009365C2 (en) | Anode-illuminated radiation detector. | |
Tick et al. | TSV processing of Medipix3 wafers by CEA-LETI: a progress report | |
JP2004219318A (ja) | 放射線検出器 | |
EP3794380B1 (en) | Sensor unit, radiation detector and method of manufacturing a sensor unit | |
CN109478556B (zh) | 检测器模块、检测器、成像设备和制造检测器模块的方法 | |
US7042008B2 (en) | Image sensor and method of manufacturing the same | |
Kasinski et al. | Development of a four-side buttable X-ray detection module with low dead area using the UFXC32k chips with TSVs | |
JP7213951B2 (ja) | イメージセンサ、イメージセンサ装置、及び、これらを含むコンピュータ断層撮影装置 | |
JP2004273747A (ja) | 光検出器および放射線検出装置 | |
US6921904B2 (en) | Solid state gamma camera module and integrated thermal management method thereof | |
JP7500876B2 (ja) | X線放射の検出のためのモジュールアセンブリ | |
JP2011245209A (ja) | X線検出器モジュールおよびx線検出器並びにx線ct装置 | |
Kasinski | Thermal and power delivery considerations of the 65k pixel 3-D integrated radiation imaging module with through-silicon vias | |
Fritzsch et al. | Packaging of radiation and particle detectors | |
Becks et al. | Building pixel detector modules in multichip module deposited technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130613 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140611 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140624 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140723 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150213 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5698472 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |