JP2010258157A - Solid-state imaging device and method of manufacturing the same - Google Patents

Solid-state imaging device and method of manufacturing the same Download PDF

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JP2010258157A
JP2010258157A JP2009105408A JP2009105408A JP2010258157A JP 2010258157 A JP2010258157 A JP 2010258157A JP 2009105408 A JP2009105408 A JP 2009105408A JP 2009105408 A JP2009105408 A JP 2009105408A JP 2010258157 A JP2010258157 A JP 2010258157A
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imaging device
state imaging
photoelectric conversion
light
solid
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Mitsuo Yasuhira
光雄 安平
Yuichi Hirofuji
裕一 広藤
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To suppress the occurrence of color mixing in a back-side illumination type solid-state imaging device. <P>SOLUTION: A solid-state imaging device includes: a plurality of photoelectric conversion units 3 formed in a first surface of a semiconductor substrate; a plurality of read-out circuits formed in a second surface opposite from the first one of the semiconductor substrate in such a manner as to correspond to the photoelectric conversion units 3, respectively; a multilayer interconnection 7 formed on the second surface of the semiconductor substrate to output electric signals of the plurality of photoelectric conversion units to the outside by using the plurality of read-out circuits; and a light shield 8 that is formed in the semiconductor substrate and surrounds at least part of the periphery of each photoelectric conversion unit. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、基板の裏面に光電変換部の受光面を配置した裏面照射型の固体撮像装置に関し、特にＭＯＳ(Metal Oxide Semiconductor)プロセスを用いて製造するＭＯＳ型イメージセンサに有効な固体撮像装置に関する。   The present invention relates to a back-illuminated solid-state imaging device in which a light-receiving surface of a photoelectric conversion unit is disposed on the back surface of a substrate, and more particularly to a solid-state imaging device effective for a MOS-type image sensor manufactured using a MOS (Metal Oxide Semiconductor) process. .

ＣＣＤ(Charge Coupled Device)イメージセンサやＭＯＳ型イメージセンサ等の固体撮像装置では、さらなる画素数増大の要求に応えるため、画素面積が縮小していく傾向にある。それに伴い、基板の表面側から光が入射される表面照射型の固体撮像装置では、基板表面側に形成された電極や配線によって光が遮られることとなり、基板内部の光電変換部（以下、「フォトダイオード」ということもある）に十分に集光させることが困難となりつつある。これを解決するため、基板の裏面側から光が入射される裏面照射型の固体撮像装置が提案されている（例えば非特許文献１、特許文献１参照）。   In a solid-state imaging device such as a CCD (Charge Coupled Device) image sensor or a MOS type image sensor, the pixel area tends to be reduced in order to meet the demand for further increase in the number of pixels. Accordingly, in the surface irradiation type solid-state imaging device in which light is incident from the surface side of the substrate, the light is blocked by the electrodes and wirings formed on the substrate surface side, and a photoelectric conversion unit (hereinafter, “ It is becoming difficult to concentrate light enough on a “photodiode”. In order to solve this, a backside illumination type solid-state imaging device in which light is incident from the backside of the substrate has been proposed (see, for example, Non-Patent Document 1 and Patent Document 1).

図１２は、従来の裏面照射型の固体撮像装置（ＣＭＯＳイメージセンサ）の一般的な構造例を示す断面図である。半導体基板１２１内に素子分離領域１２２およびフォトダイオード１２３が形成されている。半導体基板１２１の第２の面（表面）１１６側に、フォトダイオード１２３から電気信号を読み出す複数のＭＯＳトランジスタ（転送トランジスタ、リセットトランジスタ、増幅トランジスタ、アドレストランジスタ等）が形成されている。これらのＭＯＳトランジスタは、ソース・ドレイン領域１２４およびゲート電極１２５，１２６等により構成されている。複数のＭＯＳトランジスタの上には、配線層１３１が形成されている。また、半導体基板１２１の第１の面（裏面）１１７上には、保護用絶縁膜１３５、カラーフィルタ１３６、マイクロレンズ１３７が形成されている。また、裏面照射型の固体撮像装置は薄膜化された半導体基板１２１と配線層１３１とだけでは強度が不十分なため、支持基板１３３に固着されている。   FIG. 12 is a cross-sectional view showing an example of a general structure of a conventional back-illuminated solid-state imaging device (CMOS image sensor). An element isolation region 122 and a photodiode 123 are formed in the semiconductor substrate 121. On the second surface (front surface) 116 side of the semiconductor substrate 121, a plurality of MOS transistors (transfer transistors, reset transistors, amplification transistors, address transistors, etc.) that read electrical signals from the photodiode 123 are formed. These MOS transistors are composed of a source / drain region 124, gate electrodes 125 and 126, and the like. A wiring layer 131 is formed on the plurality of MOS transistors. A protective insulating film 135, a color filter 136, and a microlens 137 are formed on the first surface (back surface) 117 of the semiconductor substrate 121. In addition, the back-illuminated solid-state imaging device is fixed to the support substrate 133 because the strength is insufficient only with the thinned semiconductor substrate 121 and the wiring layer 131.

裏面照射型の固体撮像装置では、光が入射される第１の面（裏面）１１７側にＭＯＳトランジスタの電極や配線層が形成されていないので、画素の開口率を大きくすることができる。また、フォトダイオード１２３からカラーフィルタ１３６までの厚み方向の距離が短く、これらの途中に入射光を遮る配線層もない為、高い集光率を得ることができる。これらにより、表面照射型固体撮像装置に比較して、集光特性の良い、高い感度の固体撮像装置を得ることができる。   In the back-illuminated solid-state imaging device, since the MOS transistor electrode and the wiring layer are not formed on the first surface (back surface) 117 side on which light is incident, the aperture ratio of the pixel can be increased. In addition, since the distance in the thickness direction from the photodiode 123 to the color filter 136 is short, and there is no wiring layer that blocks incident light in the middle of these distances, a high light collection rate can be obtained. As a result, it is possible to obtain a solid-state imaging device having a high light-condensing characteristic and a high sensitivity as compared with the surface irradiation type solid-state imaging device.

特開２００６−１２８３９２号公報JP 2006-128392 A

T.Joy.,et al, ”Development of a Production - Ready, Back - Illuminated CMOS Image Sensor with Small Pixels” , IEDM2007 , pp1007 - 1010T.Joy., Et al, “Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels”, IEDM2007, pp1007-1010

ところが、このような裏面照射型の固体撮像装置では、基板に対して斜めに入射された光が、一つの画素の光電変換部１２３内で完全には吸収されず、隣接画素の光電変換部１２３に漏れ出す場合がある。この場合、隣接画素では漏れ込んできた光により電荷が発生して、いわゆる混色という色解像度の低下をもたらすという課題がある。
そこで、本発明は、裏面照射型の固体撮像装置において、混色の発生を抑制することができる技術を提供することを目的とする。 However, in such a back-illuminated solid-state imaging device, light obliquely incident on the substrate is not completely absorbed in the photoelectric conversion unit 123 of one pixel, and the photoelectric conversion unit 123 of an adjacent pixel. May leak. In this case, there is a problem in that charges are generated by light leaking in adjacent pixels, resulting in a decrease in color resolution called so-called color mixing.
Therefore, an object of the present invention is to provide a technique capable of suppressing the occurrence of color mixing in a backside illumination type solid-state imaging device.

本発明に係る固体撮像装置は、半導体基板内の第１の面側に形成された複数の光電変換部と、前記半導体基板の前記第１の面とは反対の第２の面側に、前記複数の光電変換部のそれぞれに対応して形成された複数の読み出し回路と、前記半導体基板の第２の面上に形成された、前記複数の読み出し回路を用いて前記複数の光電変換部の電気信号を外部に出力するための積層配線と、前記半導体基板内に形成された、各光電変換部の周囲の少なくとも一部を囲む遮光部とを備える。   The solid-state imaging device according to the present invention includes a plurality of photoelectric conversion units formed on a first surface side in a semiconductor substrate, and a second surface side opposite to the first surface of the semiconductor substrate. A plurality of readout circuits formed corresponding to each of the plurality of photoelectric conversion units, and electricity of the plurality of photoelectric conversion units using the plurality of readout circuits formed on the second surface of the semiconductor substrate. A laminated wiring for outputting a signal to the outside, and a light-shielding portion that is formed in the semiconductor substrate and surrounds at least a part of the periphery of each photoelectric conversion portion.

上記構成によれば、光電変換部の受光面を半導体基板の第１の面（裏面）側に配置した裏面照射型の固体撮像装置において、各光電変換部の周囲の少なくとも一部を囲む遮光部を設けることによって、一つの画素の光電変換部に斜めに入射された光が隣接画素の光電変換部に漏れ出すことを抑制できるため、いわゆる混色という課題を解決することができる。これは、本来、裏面照射型の固体撮像装置が有する、光線の入射角が大きくなっても、表面照射型の固体撮像装置に比較して感度低下が小さいという利点を最大限に引き出すことができるという点で、大きな効果をもたらすものである。   According to the above configuration, in the back-illuminated solid-state imaging device in which the light receiving surface of the photoelectric conversion unit is disposed on the first surface (back surface) side of the semiconductor substrate, the light shielding unit that surrounds at least a part of the periphery of each photoelectric conversion unit By preventing the light incident obliquely on the photoelectric conversion unit of one pixel from leaking to the photoelectric conversion unit of an adjacent pixel, the so-called color mixing problem can be solved. This can maximize the advantage that the decrease in sensitivity is small compared to the front-illuminated solid-state imaging device even if the incident angle of the light beam originally possessed by the back-illuminated solid-state imaging device is large. In that respect, it has a great effect.

本発明の第１実施形態に係る裏面照射型固体撮像装置の画素の平面図である。It is a top view of a pixel of a back irradiation type solid imaging device concerning a 1st embodiment of the present invention. 本発明の第１実施形態に係る裏面照射型固体撮像装置の画素の断面図であり、図１の平面図のＡ−Ａ’断面を示している。FIG. 2 is a cross-sectional view of a pixel of the backside illumination type solid-state imaging device according to the first embodiment of the present invention, and shows a cross-section A-A ′ of the plan view of FIG. 1. 遮光部の構造を例示する断面図である。It is sectional drawing which illustrates the structure of a light-shielding part. 本発明の第１実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 1st Embodiment of this invention. 本発明の第１実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 1st Embodiment of this invention. 本発明の第１実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 1st Embodiment of this invention. 本発明の第２実施形態に係る裏面照射型固体撮像装置の画素の断面図である。It is sectional drawing of the pixel of the back irradiation type solid-state imaging device which concerns on 2nd Embodiment of this invention. 本発明の第２実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る裏面照射型固体撮像装置の画素の断面図である。It is sectional drawing of the pixel of the backside illumination type solid-state imaging device which concerns on 3rd Embodiment of this invention. 本発明の第３実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 3rd Embodiment of this invention. 本発明の第３実施形態に係る裏面照射型固体撮像装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the back irradiation type solid-state imaging device which concerns on 3rd Embodiment of this invention. 従来の裏面照射型の固体撮像装置の一般的な構造例を示す断面図である。It is sectional drawing which shows the general structural example of the conventional back irradiation type solid-state imaging device.

本発明を実施するための形態を、図面を参照して詳細に説明する。
［第１実施形態］
（構成の説明）
本発明の第１実施形態に係る裏面照射型の固体撮像装置の構成について、図１乃至図３を用いて説明する。 DESCRIPTION OF EMBODIMENTS Embodiments for carrying out the present invention will be described in detail with reference to the drawings.
[First Embodiment]
(Description of configuration)
The configuration of the backside illumination type solid-state imaging device according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 3.

図１は、本発明の第１実施形態に係る裏面照射型固体撮像装置の画素の平面図であり、半導体基板の第２の面（表面）側から観察したものである。５０は単位画素の領域を示す。半導体基板内には、フォトダイオード３、ＦＤ（フローティングデフュージョン）４および遮光部８が形成されている。とくにフォトダイオード３のうち、半導体基板の第２の面側の領域を３ａで示す。遮光部８は、フォトダイオード３の周囲を囲むように形成されている。半導体基板の第２の面には、ゲート絶縁膜を介して転送トランジスタゲート電極５、リセットトランジスタゲート電極４１、増幅トランジスタゲート電極４２、アドレストランジスタゲート電極４３が形成されている。ゲート電極および半導体基板内部のソース・ドレイン領域によりＭＯＳトランジスタが構成され、これらのＭＯＳトランジスタにより読み出し回路が構成される。半導体基板の第２の面の上には、読み出し回路を用いてフォトダイオード３の電気信号を外部に出力するための積層配線が形成されており、積層配線に含まれる各配線とゲート電極または半導体基板の所定箇所とがコンタクト６ａ，６ｂ，６ｃ，６ｄ，６ｆ，６ｅ，６ｇにより電気的に接続されている。   FIG. 1 is a plan view of a pixel of the backside illumination type solid-state imaging device according to the first embodiment of the present invention, which is observed from the second surface (front surface) side of the semiconductor substrate. Reference numeral 50 denotes a unit pixel region. A photodiode 3, an FD (floating diffusion) 4, and a light shielding portion 8 are formed in the semiconductor substrate. In particular, a region of the photodiode 3 on the second surface side of the semiconductor substrate is indicated by 3a. The light shielding portion 8 is formed so as to surround the photodiode 3. On the second surface of the semiconductor substrate, a transfer transistor gate electrode 5, a reset transistor gate electrode 41, an amplification transistor gate electrode 42, and an address transistor gate electrode 43 are formed via a gate insulating film. A MOS transistor is constituted by the gate electrode and the source / drain regions inside the semiconductor substrate, and a readout circuit is constituted by these MOS transistors. On the second surface of the semiconductor substrate, a laminated wiring for outputting an electrical signal of the photodiode 3 to the outside using a readout circuit is formed. Each wiring included in the laminated wiring and a gate electrode or a semiconductor A predetermined portion of the substrate is electrically connected by contacts 6a, 6b, 6c, 6d, 6f, 6e, and 6g.

図２は、本発明の第１実施形態に係る裏面照射型固体撮像装置の画素の断面図であり、図１の平面図のＡ−Ａ’断面を示している。ここで、２０は、半導体基板（シリコン基板）領域、３０は配線領域、４０はオンチップフィルタ領域である。ｐ型の半導体基板１の第２の面２０ｂ（表面）側には、読み出し回路を囲む素子分離領域２が形成されている。半導体基板１の第１の面２０ａ（裏面）には、フォトダイオード３が形成されている。半導体基板１の第２の面２０ｂ（表面）上には、層間絶縁膜３６を介して積層配線７が形成されている。層間絶縁膜３６上には、支持基板６０が固着されている。   FIG. 2 is a cross-sectional view of a pixel of the backside illumination type solid-state imaging device according to the first embodiment of the present invention, and shows a cross-section A-A ′ of the plan view of FIG. 1. Here, 20 is a semiconductor substrate (silicon substrate) region, 30 is a wiring region, and 40 is an on-chip filter region. On the second surface 20b (front surface) side of the p-type semiconductor substrate 1, an element isolation region 2 surrounding the readout circuit is formed. A photodiode 3 is formed on the first surface 20 a (back surface) of the semiconductor substrate 1. On the second surface 20 b (front surface) of the semiconductor substrate 1, the multilayer wiring 7 is formed via the interlayer insulating film 36. A support substrate 60 is fixed on the interlayer insulating film 36.

半導体基板１の第２の面２０ａ（裏面）上には、各フォトダイオード３に対応して複数のカラーフィルタ９が形成され、複数のカラーフィルタの上には透明膜（図示せず）が形成され、透明膜上には各フォトダイオード３に対応してマイクロレンズ１０が形成されている。
遮光部８は、半導体基板１の厚み方向に、第１の面２０ａから素子分離領域２に接触するまで延在している。この例では、遮光部８の断面形状は第１の面２０ａから遠ざかっても幅が一定の矩形であるが、第１の面２０ａから遠ざかるほど幅が狭くなるようなテーパー形状としてもよい。このような構成により、遮光部８は、フォトダイオード３の周囲を囲む壁状の構造体であるといえる。また、遮光部８は、隣接画素の境界領域に存在して各画素を区画する平面視格子状の構造体であるともいえる。 A plurality of color filters 9 are formed on the second surface 20a (back surface) of the semiconductor substrate 1 corresponding to each photodiode 3, and a transparent film (not shown) is formed on the plurality of color filters. A microlens 10 is formed on the transparent film corresponding to each photodiode 3.
The light shielding portion 8 extends in the thickness direction of the semiconductor substrate 1 from the first surface 20 a until it contacts the element isolation region 2. In this example, the cross-sectional shape of the light-shielding portion 8 is a rectangle having a constant width even when it is far from the first surface 20a. However, the cross-sectional shape may be tapered such that the width becomes narrower as it is farther from the first surface 20a. With such a configuration, it can be said that the light-shielding portion 8 is a wall-shaped structure surrounding the photodiode 3. In addition, it can be said that the light-shielding portion 8 is a planar lattice-like structure that exists in the boundary region between adjacent pixels and partitions each pixel.

図３は、遮光部の構造を例示する断面図であり、図２のＢ領域を示している。遮光部８は、一つの画素のフォトダイオードに入射された光が隣接画素のフォトダイオードに漏れ出すのを抑制する機能と共に、隣接画素間のフォトダイオードを電気的に分離する機能を果たすものである。
図３（ａ）の例では、遮光部８は単一材料から構成されている。この場合、両者の機能を果たすために、遮光部８は、遮光性のある樹脂（黒フィルタ材料）から成る。遮光性のある樹脂とは、例えば、黒色の色材を分散した樹脂であり、黒色の色材としては、カーボンブラック等が挙げられる。 FIG. 3 is a cross-sectional view illustrating the structure of the light shielding portion, and shows a region B in FIG. The light-shielding unit 8 functions to prevent light incident on the photodiode of one pixel from leaking to the photodiode of the adjacent pixel and to electrically separate the photodiodes between adjacent pixels. .
In the example of FIG. 3A, the light shielding portion 8 is made of a single material. In this case, in order to fulfill both functions, the light shielding portion 8 is made of a light shielding resin (black filter material). The light-shielding resin is, for example, a resin in which a black color material is dispersed, and examples of the black color material include carbon black.

図３（ｂ）の例では、遮光部８は、絶縁層８ａ、遮光層８ｂおよび充填層８ｃの３層構造からなる。絶縁層８ａの存在により、遮光層８ｂに導電性の材料を採用することができる。導電性の材料としては、例えば、タングステンや窒化チタンが挙げられる。絶縁層８ａには、例えば、酸化シリコンや窒化シリコンを採用することができる。また、充填層８ｃには、導電性であるか絶縁性であるかを問わず採用でき、例えば、酸化シリコン、窒化シリコン、タングステン、窒化チタン等が挙げられる。   In the example of FIG. 3B, the light shielding portion 8 has a three-layer structure of an insulating layer 8a, a light shielding layer 8b, and a filling layer 8c. Due to the presence of the insulating layer 8a, a conductive material can be used for the light shielding layer 8b. Examples of the conductive material include tungsten and titanium nitride. For example, silicon oxide or silicon nitride can be used for the insulating layer 8a. The filling layer 8c can be employed regardless of whether it is conductive or insulating, and examples thereof include silicon oxide, silicon nitride, tungsten, and titanium nitride.

図３（ｃ）の例では、遮光部８は、絶縁層８ｄおよび遮光層８ｅの２層構造からなる。図３（ｂ）の充填層８ｃに遮光層８ｂと同じ材料を採用すると、図３（ｃ）のような構造になる。
（効果）
本実施形態によれば、フォトダイオードの受光面を半導体基板の第１の面（裏面）に配置した裏面照射型の固体撮像装置において、各光電変換部の周囲を囲む遮光部を設けることによって、一つの画素のフォトダイオードに斜めに入射された光が隣接画素のフォトダイオードに漏れ出すことを抑制できるため、いわゆる混色という課題を解決することができる。 In the example of FIG. 3C, the light shielding portion 8 has a two-layer structure of an insulating layer 8d and a light shielding layer 8e. When the same material as that of the light shielding layer 8b is used for the filling layer 8c in FIG. 3B, a structure as shown in FIG.
(effect)
According to the present embodiment, in the backside illumination type solid-state imaging device in which the light receiving surface of the photodiode is disposed on the first surface (back surface) of the semiconductor substrate, by providing the light shielding portion surrounding the periphery of each photoelectric conversion unit, Since it is possible to suppress light incident obliquely on the photodiode of one pixel from leaking to the photodiode of the adjacent pixel, it is possible to solve the so-called color mixing problem.

なお、遮光部を構成する材料は、少しでも光の透過を抑制できる材料であればよく、また、遮光部はフォトダイオードの周囲の少なくとも一部を囲めばよい。これらにより、少なくとも遮光部を設けない場合よりも混色抑制の効果を得ることができる。
（製造方法の説明）
次に、図４，５，６を用いて、本発明の第１実施形態に係る固体撮像装置の製造方法を簡単に説明する。 Note that the material constituting the light shielding portion may be any material that can suppress light transmission as much as possible, and the light shielding portion may surround at least a part of the periphery of the photodiode. As a result, at least the effect of suppressing color mixing can be obtained as compared with the case where no light shielding portion is provided.
(Description of manufacturing method)
Next, a manufacturing method of the solid-state imaging device according to the first embodiment of the present invention will be briefly described with reference to FIGS.

はじめに、図４（ａ）を用いて、半導体基板領域２０にトランジスタを形成するまでを説明する。半導体基板１（ここで、半導体基板の不純物濃度は、例えば２×１０１５ｃｍ−３程度である）にドライエッチングで約０．３ｕｍの深さのシャロートレンチを形成し、シリコン酸化膜を埋め込んで、最小分離幅０．１ｕｍ以細の素子分離領域２を形成する。次に、半導体基板１の第２の面（表面）側から５００ＫｅＶ以上の高加速エネルギーでのＡｓ（ヒ素）やＰ（リン）のイオン注入により３ｕｍ〜５ｕｍの深さのフォトダイオード３を形成する。ここで、フォトダイオード３のｎ型不純物濃度は、例えば１×１０１５ｃｍ−３ 〜 ２×１０１６ｃｍ−３ 程度である。次に、画素領域、及び周辺回路領域（図示せず）の各種トランジスタのソース領域、ドレイン領域、及びゲート電極を通常のパターン形成、イオン注入やポリシリコンのドライエッチングで形成する。画素領域においては、図４（ａ）に示すように、フォトダイオード３からの信号電荷を一時的に蓄積するフローティングデフュージョン４をＡｓやＰのイオン注入により形成し、その後、ポリシリコンを堆積し、リソグラフィーとドライエッチングで所望のパターンを形成し、フォトダイオード３からの信号電荷をフローティングデフュージョン４に転送する転送トランジスタゲート電極５を形成する（図４（ａ））。 First, a process until a transistor is formed in the semiconductor substrate region 20 will be described with reference to FIG. A shallow trench having a depth of about 0.3 μm is formed by dry etching on the semiconductor substrate 1 (where the impurity concentration of the semiconductor substrate is about 2 × 10 15 cm −3 , for example), and a silicon oxide film is embedded. Then, an element isolation region 2 having a minimum isolation width of 0.1 μm or less is formed. Next, a photodiode 3 having a depth of 3 μm to 5 μm is formed by ion implantation of As (arsenic) or P (phosphorus) with a high acceleration energy of 500 KeV or more from the second surface (front surface) side of the semiconductor substrate 1. . Here, the n-type impurity concentration of the photodiode 3 is, for example, about 1 × 10 15 cm −3 to 2 × 10 16 cm −3 . Next, the source region, drain region, and gate electrode of various transistors in the pixel region and peripheral circuit region (not shown) are formed by normal pattern formation, ion implantation, or polysilicon dry etching. In the pixel region, as shown in FIG. 4A, a floating diffusion 4 that temporarily accumulates signal charges from the photodiode 3 is formed by ion implantation of As or P, and then polysilicon is deposited. Then, a desired pattern is formed by lithography and dry etching to form a transfer transistor gate electrode 5 that transfers signal charges from the photodiode 3 to the floating diffusion 4 (FIG. 4A).

次に、図４（ｂ）を用いて、配線領域３０を形成するまでを説明する。半導体基板領域２０に形成されたトランジスタのソース、ドレイン領域やポリシリコンのゲート電極との電気的接続をとるために、層間絶縁膜にドライエッチングで開口し、その内部に金属のＷ（タングステン）を埋め込んでコンタクト６ａを形成する。そして、層間絶縁膜を堆積し、その上にＡｌ（アルミニウム）やＣｕ（銅）からなる導電層を形成し、この導電層をリソグラフィーとドライエッチングで所望の配線パターンを形成することにより、層間絶縁膜上に配線を形成する。この工程を繰り返すことで複数の配線が積層された積層配線７が形成される。画素領域においては、フローティングデフュージョン４と積層配線７に含まれる配線とがコンタクト６ａで電気的に接続されている（図４（ｂ））。   Next, the process until the wiring region 30 is formed will be described with reference to FIG. In order to establish electrical connection with the source and drain regions of the transistor formed in the semiconductor substrate region 20 and the gate electrode of polysilicon, an opening is formed in the interlayer insulating film by dry etching, and a metal W (tungsten) is formed therein. A contact 6a is formed by embedding. Then, an interlayer insulating film is deposited, and a conductive layer made of Al (aluminum) or Cu (copper) is formed thereon, and a desired wiring pattern is formed on the conductive layer by lithography and dry etching, thereby providing interlayer insulation. A wiring is formed on the film. By repeating this process, a laminated wiring 7 in which a plurality of wirings are laminated is formed. In the pixel region, the floating diffusion 4 and the wiring included in the laminated wiring 7 are electrically connected by a contact 6a (FIG. 4B).

次に、図５（ａ）を用いて、配線領域３０上に支持基板６０を形成した後にウェーハを裏返しして半導体基板１をフォトダイオード３の深さ近くまで削る（薄膜化する）までを説明する。配線領域３０上の表面に数１０ｎｍ〜数１００ｎｍのシリコン酸化膜を形成した厚さ３００ｕｍ〜５００ｕｍのシリコンウェーハからなる支持基板６０を貼り付ける。貼り付けは２００℃〜３００℃の窒素雰囲気中で圧力を加えながら行い、配線領域３０上のシリコン酸化膜と支持基板６０上のシリコン酸化膜のファンデルワールス力の原理で接着する。次に、支持基板６０を貼り付けた状態でトランジスタや配線層が形成されているウェーハを裏返しして、半導体基板１を裏側からバックグラインドやＣＭＰ(Chemical Mechanical Polishing)で、フォトダイオード３の深さ近くまで研磨する（図５（ａ））。   Next, with reference to FIG. 5A, a description will be given until the support substrate 60 is formed on the wiring region 30 and then the wafer is turned over and the semiconductor substrate 1 is shaved to a depth close to the photodiode 3 (thinned). To do. A support substrate 60 made of a silicon wafer having a thickness of 300 μm to 500 μm in which a silicon oxide film having a thickness of several tens to several hundreds of nm is formed on the surface of the wiring region 30 is attached. The pasting is performed while applying pressure in a nitrogen atmosphere of 200 ° C. to 300 ° C., and the silicon oxide film on the wiring region 30 and the silicon oxide film on the support substrate 60 are bonded on the principle of van der Waals force. Next, the wafer on which the transistors and wiring layers are formed with the support substrate 60 attached is turned over, and the depth of the photodiode 3 is reduced by back grinding or CMP (Chemical Mechanical Polishing) from the back side of the semiconductor substrate 1. Polish to near (FIG. 5A).

次に、図５（ｂ）を用いて、遮光部８に相当する領域２８に溝を形成するまでを説明する。半導体基板１の第１の面（裏面）にリソグラフィーでパターンを形成し、その後、第１の面からドライエッチングすることにより、フォトダイオード３の周囲を囲み、かつ、フォトダイオード３の深さ３ｕｍ〜５ｕｍと同じ深さの溝１８を形成する（図５（ｂ））。   Next, a process until a groove is formed in the region 28 corresponding to the light shielding portion 8 will be described with reference to FIG. A pattern is formed by lithography on the first surface (back surface) of the semiconductor substrate 1, and then dry etching is performed from the first surface to surround the photodiode 3 and the depth of the photodiode 3 is 3 μm to 3 μm. A groove 18 having the same depth as 5 μm is formed (FIG. 5B).

次に、図６（ａ）を用いて、領域２８に形成された溝１８に遮光性のある材料を埋め込むまでを説明する。溝１８に遮光性のある樹脂（黒フィルタ材料等）を塗布で埋め込む。あるいは、溝１８の内壁および底面にＣＶＤ(Chemical Vapor Deposition)でシリコン酸化膜やシリコン窒化膜を堆積し（図示せず）、次に、このシリコン酸化膜やシリコン窒化膜上にＰＶＤ(Physical Vapor Deposition)やＣＶＤによりＷ（タングステン）やＴｉＮ（窒化チタン）等の数１０ｎｍ以上の金属の薄膜を堆積し、そして、この金属薄膜上にＣＶＤによりシリコン酸化膜を堆積することにより溝１８を埋め込む。また、シリコン酸化膜やシリコン窒化膜が堆積された溝１８にＣＶＤでＷ等の金属を堆積することにより溝１８を埋め込むことも可能である。これにより遮光部８が形成される（図６（ａ））。   Next, with reference to FIG. 6A, a description is given of the process up to embedding a light-shielding material in the groove 18 formed in the region 28. The groove 18 is filled with a light-blocking resin (black filter material or the like) by coating. Alternatively, a silicon oxide film or silicon nitride film is deposited on the inner wall and bottom surface of the groove 18 by CVD (Chemical Vapor Deposition) (not shown), and then PVD (Physical Vapor Deposition) is formed on the silicon oxide film or silicon nitride film. ) And CVD are used to deposit a metal thin film of several tens of nm or more such as W (tungsten) or TiN (titanium nitride), and the groove 18 is buried by depositing a silicon oxide film on the metal thin film by CVD. It is also possible to fill the groove 18 by depositing a metal such as W by CVD in the groove 18 where the silicon oxide film or silicon nitride film is deposited. Thereby, the light shielding part 8 is formed (FIG. 6A).

次に、図６（ｂ）を用いて、半導体基板領域２０上にオンチップフィルタ領域４０を形成し、デバイスが完成するまでを説明する。遮光部８が形成されている半導体基板上に、カラーフィルタ材料の下地となるレジスト材料等の有機膜を塗布等により形成する（図示せず）。次に、有機膜上に、カラーフィルタ９を塗布で形成する。このとき、画素毎に色の異なるカラーフィルタ（具体的には原色カラーフィルタの場合はＲｅｄ、Ｇｒｅｅｎ、Ｂｌｕｅ、補色カラーフィルタの場合はイエロー、マゼンタ、シアン）を、通常のフォトリソグラフィーと同様な方法でパターン形成することにより形成する。次に、カラーフィルタ９上に、マイクロレンズ１０の下地となるレジスト材料等の有機膜を塗布等により形成する（図示せず）。次に、有機膜上に、マイクロレンズ１０をレジスト材料等の有機膜をドライエッチングによってレンズ形状に加工し、形成する。または、レジスト材料等の有機膜を熱フローすることによってレンズ形状に形成する（図６（ｂ））。
［第２実施形態］
（構成の説明）
本発明の第２実施形態に係る裏面照射型の固体撮像装置の構成について、図７を用いて説明する。 Next, with reference to FIG. 6B, a process until the device is completed after the on-chip filter region 40 is formed on the semiconductor substrate region 20 will be described. An organic film such as a resist material, which is a base of the color filter material, is formed on the semiconductor substrate on which the light shielding portion 8 is formed by coating or the like (not shown). Next, a color filter 9 is formed on the organic film by coating. At this time, a color filter having a different color for each pixel (specifically, Red, Green, Blue in the case of a primary color filter, yellow, magenta, cyan in the case of a complementary color filter) is used in the same method as in normal photolithography. And forming a pattern. Next, an organic film such as a resist material, which is a base of the microlens 10, is formed on the color filter 9 by coating or the like (not shown). Next, the microlens 10 is formed on the organic film by processing an organic film such as a resist material into a lens shape by dry etching. Alternatively, it is formed into a lens shape by heat-flowing an organic film such as a resist material (FIG. 6B).
[Second Embodiment]
(Description of configuration)
The configuration of the backside illumination type solid-state imaging device according to the second embodiment of the present invention will be described with reference to FIG.

図７は、本発明の第２実施形態に係る裏面照射型固体撮像装置の画素の断面図である。本実施形態では、半導体基板１の第１の面２０ａ上に、各カラーフィルタ９の周囲を囲む遮光性グリッド５０が形成されている。これ以外の構成は第１実施形態と同様であるため、第１実施形態と同一の構成要素には同一の番号を用い、説明を省略する。
遮光性グリッド５０は、遮光性の材料からなる格子状の構造体であり、具体的には、金属（タングステン、窒化チタン等）または遮光性の樹脂（黒フィルタ材料、青フィルタ材料等）からなる。遮光性グリッド５０はカラーフィルタ９の厚みと同等の高さで、例えば、数１００ｎｍ〜１ｕｍ程度である。また、遮光性グリッド５０の幅は、遮光部８の幅とほぼ等しい。カラーフィルタ９は遮光性グリッド５０により画素毎に分離されている。
（効果）
本実施形態によれば、フォトダイオードの受光面を半導体基板の第１の面（裏面）に配置した裏面照射型の固体撮像装置において、各光電変換部の周囲を囲む遮光部を設け、更に、各カラーフィルタの周囲を囲む遮光性グリッドを設けることによって、一つの画素のフォトダイオードに斜めに入射された光が隣接画素のフォトダイオードに漏れ出すことを抑制できるだけでなく、一つの画素のカラーフィルタに斜めに入射された光が隣接画素のカラーフィルタに漏れ出すことを抑制できるため、いわゆる混色という課題を解決することができる。
（製造方法の説明）
次に、図８を用いて、本発明の第２実施形態に係る固体撮像装置の製造方法を簡単に説明する。第１実施形態の図４，５に表された工程までは本実施形態でも共通である。図８（ａ）は、溝１８に遮光性のある材料が埋め込まれた状態を示している。これにより遮光部８が形成される。 FIG. 7 is a cross-sectional view of a pixel of a backside illumination type solid-state imaging device according to the second embodiment of the present invention. In the present embodiment, a light-shielding grid 50 that surrounds each color filter 9 is formed on the first surface 20 a of the semiconductor substrate 1. Since the configuration other than this is the same as that of the first embodiment, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
The light-shielding grid 50 is a lattice-shaped structure made of a light-shielding material. Specifically, the light-shielding grid 50 is made of a metal (tungsten, titanium nitride, etc.) or a light-shielding resin (black filter material, blue filter material, etc.). . The light-shielding grid 50 has a height equivalent to the thickness of the color filter 9 and is, for example, about several hundred nm to 1 μm. The width of the light shielding grid 50 is substantially equal to the width of the light shielding portion 8. The color filter 9 is separated for each pixel by the light shielding grid 50.
(effect)
According to the present embodiment, in the backside illumination type solid-state imaging device in which the light receiving surface of the photodiode is disposed on the first surface (back surface) of the semiconductor substrate, the light shielding portion is provided that surrounds each photoelectric conversion portion. By providing a light-shielding grid that surrounds each color filter, it is possible not only to prevent light incident obliquely on the photodiode of one pixel from leaking to the photodiode of the adjacent pixel, but also to a color filter of one pixel. It is possible to suppress the light incident obliquely on the color filter from leaking to the color filter of the adjacent pixel, so that the so-called color mixing problem can be solved.
(Description of manufacturing method)
Next, a manufacturing method of the solid-state imaging device according to the second embodiment of the present invention will be briefly described with reference to FIG. The processes up to the steps shown in FIGS. 4 and 5 of the first embodiment are also common to this embodiment. FIG. 8A shows a state in which a light shielding material is embedded in the groove 18. Thereby, the light shielding part 8 is formed.

次に、図８（ｂ）に示すように、遮光部８が形成された半導体基板領域２０上に、金属または遮光性のある樹脂からなる遮光性グリッド５０を形成する。遮光性グリッド５０が金属の場合は、ＣＶＤやＰＶＤによりＷ（タングステン）等の金属膜を堆積し、フォトリソグラフィーとドライエッチングでパターン形成する。また、遮光性グリッド５０が遮光性のある樹脂（黒フィルター材料、青フィルター材料）の場合は、遮光性のある樹脂を塗布した後、フォトリソグラフィーでパターン形成する。ここで、遮光性グリッド５０はカラーフィルタ９の厚みと同等の高さで、例えば、数１００ｎｍ〜１ｕｍ程度である。   Next, as shown in FIG. 8B, a light-shielding grid 50 made of metal or light-shielding resin is formed on the semiconductor substrate region 20 where the light-shielding portion 8 is formed. When the light-shielding grid 50 is a metal, a metal film such as W (tungsten) is deposited by CVD or PVD, and a pattern is formed by photolithography and dry etching. When the light-shielding grid 50 is a light-shielding resin (black filter material or blue filter material), a pattern is formed by photolithography after applying the light-shielding resin. Here, the light-shielding grid 50 has a height equivalent to the thickness of the color filter 9 and is, for example, about several hundred nm to 1 μm.

次に、遮光性グリッド５０が形成された半導体基板上に、開口５０ａからカラーフィルタ材料の下地となるレジスト材料等の有機膜を塗布により形成し、次に、有機膜上に、カラーフィルタ９を塗布で形成する。カラーフィルタ９の厚みは遮光性グリッド５０の厚みと同等で、遮光性グリッド５０の開口５０ａを埋め込むように形成される。あとは、第１実施形態と同様に、カラーフィルタ上にマイクロレンズを形成する。
［第３実施形態］
（構成の説明）
本発明の第３実施形態に係る裏面照射型の固体撮像装置の構成について、図９を用いて説明する。 Next, an organic film such as a resist material, which is the base of the color filter material, is formed by coating on the semiconductor substrate on which the light-shielding grid 50 is formed, and then the color filter 9 is formed on the organic film. Form by coating. The thickness of the color filter 9 is equal to the thickness of the light-shielding grid 50, and is formed so as to embed the openings 50a of the light-shielding grid 50. After that, as in the first embodiment, a microlens is formed on the color filter.
[Third Embodiment]
(Description of configuration)
The configuration of a backside illumination type solid-state imaging device according to the third embodiment of the present invention will be described with reference to FIG.

図９は、本発明の第３実施形態に係る裏面照射型固体撮像装置の画素の断面図である。本実施形態では、遮光部３８以外の構成は第１実施形態と同様であるため、第１実施形態と同一の構成要素には同一の番号を用い、説明を省略する。遮光部３８は、カラーフィルタ９の厚み分（例えば数１００ｎｍ〜１ｕｍ程度）だけ半導体基板の第１の面２０ａから突出している。そのため、遮光部３８の上面の高さとカラーフィルタ９の上面の高さとがほぼ等しくなっている。
（効果）
本実施形態によれば、フォトダイオードの受光面を半導体基板の第１の面（裏面）に配置した裏面照射型の固体撮像装置において、各光電変換部の周囲を囲む遮光部を設け、更に、この遮光部が各カラーフィルタの周囲を囲むため、一つの画素のフォトダイオードに斜めに入射された光が隣接画素のフォトダイオードに漏れ出すことを抑制できるだけでなく、一つの画素のカラーフィルタに斜めに入射された光が隣接画素のカラーフィルタに漏れ出すことを抑制できるため、いわゆる混色という課題を解決することができる。
（製造方法の説明）
次に、図１０，１１を用いて、本発明の第３実施形態に係る固体撮像装置の製造方法を簡単に説明する。第１実施形態の図４に表された工程までは本実施形態でも共通である。 FIG. 9 is a cross-sectional view of a pixel of a backside illumination type solid-state imaging device according to the third embodiment of the present invention. In the present embodiment, since the configuration other than the light shielding unit 38 is the same as that of the first embodiment, the same components as those of the first embodiment are denoted by the same reference numerals and description thereof is omitted. The light shielding portion 38 protrudes from the first surface 20a of the semiconductor substrate by the thickness of the color filter 9 (for example, about several hundred nm to 1 μm). Therefore, the height of the upper surface of the light shielding portion 38 and the height of the upper surface of the color filter 9 are substantially equal.
(effect)
According to the present embodiment, in the backside illumination type solid-state imaging device in which the light receiving surface of the photodiode is disposed on the first surface (back surface) of the semiconductor substrate, the light shielding portion is provided that surrounds each photoelectric conversion portion. Since this light-shielding portion surrounds each color filter, not only can the light incident on the photodiode of one pixel obliquely enter the photodiode of the adjacent pixel be prevented from leaking, but also the color filter of one pixel can be Since it is possible to suppress the light incident on the color filter from leaking to the color filter of the adjacent pixel, the so-called color mixing problem can be solved.
(Description of manufacturing method)
Next, a method for manufacturing a solid-state imaging device according to the third embodiment of the present invention will be briefly described with reference to FIGS. The steps up to the step shown in FIG. 4 of the first embodiment are also common to this embodiment.

図１０（ａ）に示すように、配線領域３０上の表面に数１０ｎｍ〜数１００ｎｍのシリコン酸化膜を形成した厚さ３００ｕｍ〜５００ｕｍのシリコンウェーハからなる支持基板６０を貼り付ける。貼り付けは２００℃〜３００℃の窒素雰囲気中で圧力を加えながら行い、配線領域３０上のシリコン酸化膜と支持基板６０上のシリコン酸化膜のファンデルワールス力の原理で接着する。次に、支持基板６０を貼り付けた状態でトランジスタや配線層が形成されているウェーハを裏返しして、半導体基板１を裏側からバックグラインドやＣＭＰ(Chemical Mechanical Polishing)で、フォトダイオード３の深さ近くまで研磨する。この後の工程で、半導体基板１をカラーフィルタ９の厚み分（例えば数１００ｎｍ〜１ｕｍ程度）だけドライエッチングするので、その分、第１実施形態に比べて研磨量を少なくする。   As shown in FIG. 10A, a support substrate 60 made of a silicon wafer having a thickness of 300 μm to 500 μm in which a silicon oxide film having a thickness of several tens to several hundreds of nanometers is formed on the surface of the wiring region 30 is attached. The pasting is performed while applying pressure in a nitrogen atmosphere of 200 ° C. to 300 ° C., and the silicon oxide film on the wiring region 30 and the silicon oxide film on the support substrate 60 are bonded on the principle of van der Waals force. Next, the wafer on which the transistors and wiring layers are formed with the support substrate 60 attached is turned over, and the depth of the photodiode 3 is reduced by back grinding or CMP (Chemical Mechanical Polishing) from the back side of the semiconductor substrate 1. Polish close. In the subsequent steps, the semiconductor substrate 1 is dry-etched by the thickness of the color filter 9 (for example, about several hundred nm to 1 μm), so that the amount of polishing is reduced as compared with the first embodiment.

次に、図１０（ｂ）に示すように、半導体基板１の第１の面（裏面）にリソグラフィーでパターンを形成し、その後、第１の面からフォトダイオード３の厚み（例えば、３ｕｍ〜５ｕｍ）とカラーフィルタの厚み（例えば数１００ｎｍ〜１ｕｍ程度）を加えた深さまでドライエッチングすることにより、フォトダイオード３の周囲を囲み、かつ、素子分離領域２に達する溝１８を形成する。   Next, as shown in FIG. 10B, a pattern is formed by lithography on the first surface (back surface) of the semiconductor substrate 1, and then the thickness of the photodiode 3 (for example, 3 μm to 5 μm from the first surface). ) And the thickness of the color filter (for example, several hundred nm to 1 μm) are added to form a groove 18 that surrounds the photodiode 3 and reaches the element isolation region 2.

次に、図１１（ａ）に示すように、溝１８に遮光性のある材料を埋め込むことにより遮光部３８を形成する。遮光部３８の材料および形成方法は第１実施形態と同様である。
次に、図１１（ｂ）に示すように、半導体基板１におけるカラーフィルタが形成される領域１１を、カラーフィルタの厚み分（例えば数１００ｎｍ〜１ｕｍ程度）だけドライエッチングにより除去する。これにより、半導体基板１の領域１１に凹部が形成される。 Next, as shown in FIG. 11A, the light shielding part 38 is formed by embedding a light shielding material in the groove 18. The material and forming method of the light shielding portion 38 are the same as those in the first embodiment.
Next, as shown in FIG. 11B, the region 11 where the color filter is formed in the semiconductor substrate 1 is removed by dry etching by the thickness of the color filter (for example, about several hundred nm to 1 μm). Thereby, a recess is formed in the region 11 of the semiconductor substrate 1.

次に、半導体基板の凹部に、カラーフィルタ材料の下地となるレジスト材料等の有機膜を塗布により形成し、次に、有機膜上に、カラーフィルタ９を塗布で形成する。カラーフィルタ９は半導体基板の凹部を埋め込むように形成される。あとは、第１実施形態と同様に、カラーフィルタ上にマイクロレンズを形成する。   Next, an organic film such as a resist material, which is a base for the color filter material, is formed by coating in the recesses of the semiconductor substrate, and then the color filter 9 is formed by coating on the organic film. The color filter 9 is formed so as to fill the concave portion of the semiconductor substrate. After that, as in the first embodiment, a microlens is formed on the color filter.

本発明は、固体撮像装置及びその製造方法に利用でき、特にオンチップマイクレンズ構造を有する固体撮像装置及び製造方法に有効である。   The present invention can be used for a solid-state imaging device and a manufacturing method thereof, and is particularly effective for a solid-state imaging device having an on-chip microphone lens structure and a manufacturing method.

１ 半導体基板
２ 素子分離領域
３ フォトダイオード
４ フローティングデフュージョン
５ 転送トランジスタゲート電極
６ａ，６ｂ，６ｃ，６ｄ，６ｆ，６ｅ，６ｇ コンタクト
７ 積層配線
８，３８ 遮光部
９ カラーフィルタ
１０ マイクロレンズ
１８ 溝
２０ 半導体基板領域
３０ 配線領域
３６ 層間絶縁膜
３８ 遮光部
４０ オンチップフィルタ領域
４１ リセットトランジスタゲート電極
４２ 増幅トランジスタゲート電極
４３ アドレストランジスタゲート電極
５０ 遮光性グリッド
６０ 支持基板 DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Element isolation region 3 Photodiode 4 Floating diffusion 5 Transfer transistor gate electrode 6a, 6b, 6c, 6d, 6f, 6e, 6g Contact 7 Laminated wiring 8, 38 Light-shielding part 9 Color filter 10 Micro lens 18 Groove 20 Semiconductor substrate region 30 Wiring region 36 Interlayer insulating film 38 Light shielding part 40 On-chip filter region 41 Reset transistor gate electrode 42 Amplifying transistor gate electrode 43 Address transistor gate electrode 50 Light shielding grid 60 Support substrate

Claims (20)

半導体基板内の第１の面側に形成された複数の光電変換部と、
前記半導体基板の前記第１の面とは反対の第２の面側に、前記複数の光電変換部のそれぞれに対応して形成された複数の読み出し回路と、
前記半導体基板の第２の面上に形成された、前記複数の読み出し回路を用いて前記複数の光電変換部の電気信号を外部に出力するための積層配線と、
前記半導体基板内に形成された、各光電変換部の周囲の少なくとも一部を囲む遮光部と
を備えることを特徴とする固体撮像装置。 A plurality of photoelectric conversion units formed on the first surface side in the semiconductor substrate;
A plurality of readout circuits formed on the second surface side opposite to the first surface of the semiconductor substrate, corresponding to each of the plurality of photoelectric conversion units;
Laminated wiring formed on the second surface of the semiconductor substrate for outputting electrical signals of the plurality of photoelectric conversion units to the outside using the plurality of readout circuits;
A solid-state imaging device, comprising: a light-shielding portion that is formed in the semiconductor substrate and surrounds at least a part of the periphery of each photoelectric conversion portion. 前記半導体基板の第２の面側に形成された、各読み出し回路の周囲を囲む素子分離領域をさらに備え、
前記遮光部は、前記半導体基板の厚み方向に、前記第１の面から前記素子分離領域に接触するまで延在していることを特徴とする請求項１に記載の固体撮像装置。 An element isolation region formed on the second surface side of the semiconductor substrate and surrounding each readout circuit;
The solid-state imaging device according to claim 1, wherein the light-shielding portion extends in the thickness direction of the semiconductor substrate from the first surface until it contacts the element isolation region. 前記第１の面上に前記複数の光電変換部のそれぞれに対応して形成された複数のカラーフィルタと、
前記複数のカラーフィルタの上に形成された透明膜と、
前記透明膜の上に前記複数の光電変換部のそれぞれに対応して形成された複数のマイクロレンズと
をさらに備えることを特徴とする請求項１または２に記載の固体撮像装置。 A plurality of color filters formed on the first surface corresponding to each of the plurality of photoelectric conversion units;
A transparent film formed on the plurality of color filters;
The solid-state imaging device according to claim 1, further comprising: a plurality of microlenses formed on the transparent film so as to correspond to each of the plurality of photoelectric conversion units. 前記遮光部は金属から成ることを特徴とする請求項１〜３のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the light shielding portion is made of metal. 前記遮光部は遮光性のある樹脂から成ることを特徴とする請求項１〜３のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the light-shielding portion is made of a light-shielding resin. 前記遮光部の断面形状は、前記第１の面から遠ざかるほど幅が狭くなるようなテーパー形状であることを特徴とする請求項１〜５のいずれかに記載の固体撮像装置。   6. The solid-state imaging device according to claim 1, wherein a cross-sectional shape of the light-shielding portion is a tapered shape such that the width decreases as the distance from the first surface increases. 前記第１の面上に前記複数の光電変換部のそれぞれに対応して形成された複数のカラーフィルタと、
前記第１の面上に形成され、各カラーフィルタの周囲を囲む遮光性グリッドと
をさらに備えることを特徴とする請求項１または２に記載の固体撮像装置。 A plurality of color filters formed on the first surface corresponding to each of the plurality of photoelectric conversion units;
The solid-state imaging device according to claim 1, further comprising: a light-shielding grid formed on the first surface and surrounding each color filter. 前記遮光性グリッドの幅は前記遮光部の幅とほぼ等しいことを特徴とする請求項７に記載の固体撮像装置。   The solid-state imaging device according to claim 7, wherein a width of the light shielding grid is substantially equal to a width of the light shielding portion. 前記複数のカラーフィルタの上に形成された透明膜と、
前記透明膜の上に前記複数の光電変換部のそれぞれに対応して形成された複数のマイクロレンズと
をさらに備えることを特徴とする請求項７または８に記載の固体撮像装置。 A transparent film formed on the plurality of color filters;
The solid-state imaging device according to claim 7, further comprising: a plurality of microlenses formed on the transparent film so as to correspond to each of the plurality of photoelectric conversion units. 前記遮光部は金属から成ることを特徴とする請求項７〜９のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 7, wherein the light shielding portion is made of metal. 前記遮光部は遮光性のある樹脂から成ることを特徴とする請求項７〜９のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 7, wherein the light-shielding portion is made of a light-shielding resin. 前記遮光部の断面形状は、前記第１の面から遠ざかるほど幅が狭くなるようなテーパー形状であることを特徴とする請求項７〜１１のいずれかに記載の固体撮像装置。   12. The solid-state imaging device according to claim 7, wherein a cross-sectional shape of the light-shielding portion is a tapered shape such that the width decreases as the distance from the first surface increases. 前記第１の面上に前記複数の光電変換部のそれぞれに対応して形成された複数のカラーフィルタをさらに備え、
前記遮光部は、前記カラーフィルタの上面とほぼ等しい高さまで前記第１の面から突出していることを特徴とする請求項１または２に記載の固体撮像装置。 A plurality of color filters formed on the first surface corresponding to each of the plurality of photoelectric conversion units;
3. The solid-state imaging device according to claim 1, wherein the light shielding portion protrudes from the first surface to a height substantially equal to an upper surface of the color filter. 前記複数のカラーフィルタの上に形成された透明膜と、
前記透明膜の上に前記複数の光電変換部のそれぞれに対応して形成された複数のマイクロレンズと
をさらに備えることを特徴とする請求項１３または１４に記載の固体撮像装置。 A transparent film formed on the plurality of color filters;
The solid-state imaging device according to claim 13, further comprising: a plurality of microlenses formed on the transparent film so as to correspond to each of the plurality of photoelectric conversion units. 前記遮光部は金属から成ることを特徴とする請求項１３または１４に記載の固体撮像装置。   The solid-state imaging device according to claim 13 or 14, wherein the light shielding portion is made of metal. 前記遮光部は遮光性のある樹脂から成ることを特徴とする請求項１３または１４に記載の固体撮像装置。   The solid-state imaging device according to claim 13 or 14, wherein the light-shielding portion is made of a light-shielding resin. 前記遮光部の断面形状は、前記第１の面から遠ざかるほど幅が狭くなるようなテーパー形状であることを特徴とする請求項１３〜１６のいずれかに記載の固体撮像装置。   17. The solid-state imaging device according to claim 13, wherein a cross-sectional shape of the light-shielding portion is a tapered shape such that the width decreases as the distance from the first surface increases. 半導体基板内の第１の面側に複数の光電変換部を、前記半導体基板の前記第１の面とは反対の第２の面側に前記複数の光電変換部のそれぞれに対応する複数の読み出し回路を、前記第２の面上に前記複数の読み出し回路を用いて前記複数の光電変換部の電気信号を外部に出力するための積層配線を形成する第１の工程と、
前記半導体基板の第１の面から、各光電変換部の周囲の少なくとも一部を囲むように溝部を形成する第２の工程と、
前記溝部を遮光性の材料で埋める第３の工程と、
前記第１の面上に前記複数の光電変換部のそれぞれに対応して複数のカラーフィルタを形成する第４の工程と、
前記複数のカラーフィルタの上に透明膜を形成する第５の工程と、
前記透明膜の上に前記複数の光電変換部のそれぞれに対応して複数のマイクロレンズを形成する第６の工程と
を含むことを特徴とする固体撮像装置の製造方法。 A plurality of photoelectric conversion units on the first surface side in the semiconductor substrate, and a plurality of readouts corresponding to each of the plurality of photoelectric conversion units on the second surface side opposite to the first surface of the semiconductor substrate A first step of forming a laminated wiring for outputting an electrical signal of the plurality of photoelectric conversion units to the outside using the plurality of readout circuits on the second surface;
A second step of forming a groove so as to surround at least a part of the periphery of each photoelectric conversion unit from the first surface of the semiconductor substrate;
A third step of filling the groove with a light shielding material;
A fourth step of forming a plurality of color filters corresponding to each of the plurality of photoelectric conversion units on the first surface;
A fifth step of forming a transparent film on the plurality of color filters;
And a sixth step of forming a plurality of microlenses corresponding to each of the plurality of photoelectric conversion units on the transparent film. 前記第１の工程は、
前記半導体基板の前記第２の面から不純物を注入して複数の光電変換部を形成し、
前記第２の面側に前記複数の光電変換部のそれぞれに対応する複数の読み出し回路を形成し、
前記第２の面上に前記複数の読み出し回路を用いて前記複数の光電変換部の電気信号を外部に出力するための積層配線を形成し、
前記複数の光電変換部が表面近くに位置するように、前記半導体基板を前記第２の面の反対側から研磨すること
を特徴とする請求項１８に記載の固体撮像装置の製造方法。 The first step includes
Impurities are injected from the second surface of the semiconductor substrate to form a plurality of photoelectric conversion units,
Forming a plurality of readout circuits corresponding to each of the plurality of photoelectric conversion units on the second surface side;
Forming a multilayer wiring on the second surface for outputting the electrical signals of the plurality of photoelectric conversion units to the outside using the plurality of readout circuits;
The method of manufacturing a solid-state imaging device according to claim 18, wherein the semiconductor substrate is polished from the opposite side of the second surface so that the plurality of photoelectric conversion units are positioned near the surface. 前記第１の工程において、前記第２の面側に、各読み出し回路の周囲を囲む素子分離領域をさらに形成し、
前記第２の工程において、前記溝部を前記素子分離領域に達するように形成することを特徴とする請求項１８または１９に記載の固体撮像装置の製造方法。 In the first step, an element isolation region surrounding the periphery of each readout circuit is further formed on the second surface side,
The method for manufacturing a solid-state imaging device according to claim 18, wherein, in the second step, the groove is formed so as to reach the element isolation region.
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