JP2010217514A - Method for manufacturing photomask - Google Patents
Method for manufacturing photomask Download PDFInfo
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- JP2010217514A JP2010217514A JP2009064229A JP2009064229A JP2010217514A JP 2010217514 A JP2010217514 A JP 2010217514A JP 2009064229 A JP2009064229 A JP 2009064229A JP 2009064229 A JP2009064229 A JP 2009064229A JP 2010217514 A JP2010217514 A JP 2010217514A
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
本発明は、フォトマスクの製造方法に関するものであり、特に、ＡｒＦエキシマレーザの照射にる膜の劣化を防止したフォトマスクの製造方法に関する。 The present invention relates to a photomask manufacturing method, and more particularly, to a photomask manufacturing method in which deterioration of a film exposed to ArF excimer laser is prevented.
半導体集積回路の製造に用いられるリソグラフィ工程にて、露光光源としてＡｒＦエキシマレーザを利用すると、フォトマスクのパターンに用いられている材料であるＭｏＳｉ系膜、Ｃｒ系膜に劣化が生じる。ＡｒＦエキシマレーザの照射によって、パターン寸法の変化、パターン形状の変化、また、位相差、透過率などの光学特性の変化等の問題が発生する。
また、Ｃｒ系膜においては、洗浄時の薬液処理により膜に劣化が生じるといった問題が発生する。
When an ArF excimer laser is used as an exposure light source in a lithography process used for manufacturing a semiconductor integrated circuit, the MoSi-based film and the Cr-based film, which are materials used for the photomask pattern, are deteriorated. IrF excimer laser irradiation causes problems such as changes in pattern dimensions, changes in pattern shape, and changes in optical characteristics such as phase difference and transmittance.
Further, in the case of a Cr-based film, there arises a problem that the film is deteriorated due to the chemical treatment during cleaning.
本発明は、上記の問題を解決するためになされたものであり、フォトマスクのパターンのＭｏＳｉ系膜、Ｃｒ系膜が、ＡｒＦエキシマレーザの照射によって劣化が生じるを防止し、パターン寸法、パターン形状、及び、位相差、透過率に変化のないフォトマスクを製造することのできるフォトマスクの製造方法を提供することを課題とする。 The present invention has been made to solve the above problems, and prevents the MoSi-based film and Cr-based film of the photomask pattern from being deteriorated by irradiation with ArF excimer laser, and the pattern size and pattern shape. It is another object of the present invention to provide a photomask manufacturing method capable of manufacturing a photomask having no change in phase difference and transmittance.
本発明は、ＭｏＳｉ系膜又はＣｒ系膜が設けられた基板上にレジストパターンを形成し、該レジストパターンから露出したＭｏＳｉ系膜又はＣｒ系膜をエッチングした後にレジストパターンを剥離し、形成されたＭｏＳｉ系膜又はＣｒ系膜のパターンに、ＡｒＦエキシマレーザの照射による上記パターンの膜に劣化が生じることを防止するためのプラズマ処理を施すことを特徴とするフォトマスクの製造方法である。 In the present invention, a resist pattern is formed on a substrate provided with a MoSi-based film or a Cr-based film, and the resist pattern is peeled off after etching the MoSi-based film or the Cr-based film exposed from the resist pattern. A method for manufacturing a photomask, comprising: applying a plasma treatment to a pattern of a MoSi-based film or a Cr-based film to prevent the film having the pattern from being deteriorated by irradiation with an ArF excimer laser.
また、本発明は、上記発明によるフォトマスクの製造方法において、前記プラズマ処理と同様の効果が得られる方法として前記パターンへのＵＶ照射又は加熱を施すことを特徴とするフォトマスクの製造方法である。 The present invention also provides a photomask manufacturing method according to the above-described invention, wherein the pattern is subjected to UV irradiation or heating as a method for obtaining the same effect as the plasma treatment. .
本発明は、ＭｏＳｉ系膜又はＣｒ系膜が設けられた基板上にレジストパターンを形成し、該レジストパターンから露出したＭｏＳｉ系膜又はＣｒ系膜をエッチングした後にレジストパターンを剥離し、形成されたＭｏＳｉ系膜、Ｃｒ系膜のパターンに、プラズマ処理を施すので、フォトマスクのパターンのＭｏＳｉ系膜、Ｃｒ系膜が、ＡｒＦエキシマレーザの照射によって劣化されるのが防止され、パターン寸法、パターン形状、及び、位相差、透過率に変化のないフォトマスクの製造方法となる。 In the present invention, a resist pattern is formed on a substrate provided with a MoSi-based film or a Cr-based film, and the resist pattern is peeled off after etching the MoSi-based film or the Cr-based film exposed from the resist pattern. Since the plasma treatment is applied to the pattern of the MoSi film and Cr film, the MoSi film and Cr film of the photomask pattern are prevented from being deteriorated by the ArF excimer laser irradiation, and the pattern size and pattern shape are prevented. And a photomask manufacturing method in which there is no change in phase difference and transmittance.
以下に、本発明によるフォトマスクの製造方法を、その実施の形態に基づいて説明する。
本発明は、フォトマスクの製造におけるプロセス工程にて、遮光膜などのエッチング後に、レジストパターンが剥離され、形成されたＭｏＳｉ系膜又はＣｒ系膜のパターンに、ＡｒＦエキシマレーザの照射による膜の劣化を防止するためのプラズマ処理を施すことを特徴としている。
図１（ａ）は、形成された直後のＭｏＳｉ系膜又はＣｒ系膜のパターンの断面図である。また、図１（ｂ）は、図１（ａ）に示すパターンへのプラズマ処理後の断面図である。
Below, the manufacturing method of the photomask by this invention is demonstrated based on the embodiment.
In the present invention, the resist pattern is peeled off after etching of the light shielding film or the like in a process step in the manufacture of a photomask, and the formed MoSi-based film or Cr-based film pattern is deteriorated by irradiation with an ArF excimer laser. It is characterized by performing plasma treatment for preventing the above.
FIG. 1A is a cross-sectional view of the pattern of the MoSi-based film or Cr-based film immediately after being formed. FIG. 1B is a cross-sectional view after the plasma treatment for the pattern shown in FIG.
図１（ｂ）に示すように、基板（１）上のパターン（２）の表面は不動態膜（３）で覆われている。プラズマ処理によって、ＭｏＳｉ系膜、Ｃｒ系膜の表面は不動態化し不動態膜（３）となる。この不動態膜（３）は、ＡｒＦエキシマレーザ、及びＡｒＦエキシマレーザにより生成されるオゾンとの反応性が低く、ＡｒＦエキシマレーザやＫｒＦエキシマレーザなどＤＵＶ光の照射に対する耐性が向上し、膜の劣化が防止されるものと推量している。 As shown in FIG. 1B, the surface of the pattern (2) on the substrate (1) is covered with a passive film (3). By the plasma treatment, the surfaces of the MoSi-based film and the Cr-based film are passivated to become a passive film (3). This passive film (3) has low reactivity with the ArF excimer laser and ozone generated by the ArF excimer laser, improves resistance to irradiation with DUV light such as ArF excimer laser and KrF excimer laser, and deteriorates the film. I guess that will be prevented.
また、Ｃｒ系膜においては、Ｃｒ系膜の表面が不動態化し不動態膜（３）となることによって、薬液処理に対する耐性が向上するためと推量される。
また、プラズマ処理と同様の効果が得られる方法として前記パターンへのＵＶ照射又は加熱を施すことにより、上記不動態化が促進される。尚、プラズマ処理の際に導入されるガスとしては、例えば、Ｏ2 、Ｈ2 Ｏが挙げられる。
In addition, in the Cr-based film, it is presumed that the resistance to the chemical treatment is improved when the surface of the Cr-based film is passivated to become the passive film (3).
In addition, the passivation is promoted by applying UV irradiation or heating to the pattern as a method for obtaining the same effect as the plasma treatment. As the gas to be introduced during the plasma treatment, for example, O 2, H 2 O and the like.
１・・・基板
２・・・パターン
３・・・不動態膜
1 ...
Claims (2)
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| JP2009064229A JP2010217514A (en) | 2009-03-17 | 2009-03-17 | Method for manufacturing photomask |
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| JP2009064229A JP2010217514A (en) | 2009-03-17 | 2009-03-17 | Method for manufacturing photomask |
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