JP2010199578A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010199578A JP2010199578A JP2010029973A JP2010029973A JP2010199578A JP 2010199578 A JP2010199578 A JP 2010199578A JP 2010029973 A JP2010029973 A JP 2010029973A JP 2010029973 A JP2010029973 A JP 2010029973A JP 2010199578 A JP2010199578 A JP 2010199578A
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- Prior art keywords
- semiconductor device
- semiconductor
- preceramic polymer
- underfill
- ceramic material
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 229920000642 polymer Polymers 0.000 claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 12
- 229910010293 ceramic material Inorganic materials 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 229920003257 polycarbosilane Polymers 0.000 claims description 3
- -1 polysiloxane Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052878 cordierite Inorganic materials 0.000 claims description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001709 polysilazane Polymers 0.000 claims description 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
【解決手段】半導体装置、特にパワー半導体装置に関する。接触部10を設けられた表面を有している半導体2、4、11、12が膜結合7、8、9から形成されている電気接続装置6に接続され、接続装置6と半導体2、4、11、12の表面との間にアンダーフィル部14が設けられている。アンダーフィル部の安定性を高めるために、アンダーフィル部14がプレセラミックポリマーから形成されているマトリックスを有することである。
【選択図】図2
Description
2 第1パワー半導体
3 第1放熱プレート
4 第2パワー半導体
5 第2放熱プレート
6 接続装置
7 第1金属膜
8 絶縁膜
9 第2金属膜
10 接触部
11 第3パワー半導体
12 第4パワー半導体
13 接触面
14 アンダーフィル部
V1〜V6 体積
Claims (8)
- 接触部(10)を有して設けられた表面を有している半導体(2、4、11、12)が膜結合(7、8、9)から形成された電気接続装置(6)と接続されている半導体装置、特にパワー半導体装置であって、接続装置(6)と半導体(2、4、11、12)の表面との間にアンダーフィル部(14)が設けられている半導体装置において、
アンダーフィル部(14)がプレセラミックポリマーから形成されたマトリックスを有していることを特徴とする半導体装置。 - プレセラミックポリマーが、80体積%まで、好適には50体積%までの充填程度を有する充填材料によって充填されている、請求項1に記載の半導体装置。
- 充填材料が、セラミック材料から形成され且つ0.5〜500μmの範囲の平均粒子サイズを有するパウダーである、請求項1又は2に記載の半導体装置。
- セラミック材料の熱伝導率λが、室温で10W/mKより大きく好適には20W/mKより大きい、請求項1〜3のうちのいずれか一項に記載の半導体装置。
- セラミック材料が、BN、SiC、Si3N4、AlN、ステアタイト、コーディエライトのグループから選択されている、請求項1〜4のうちのいずれか一項に記載の半導体装置。
- プレセラミックポリマーが、ゲル状或いは熱硬化性形態である、請求項1〜5のうちのいずれか一項に記載の半導体装置。
- プレセラミックポリマーが、ポリシロキサン、ポリシラザン、ポリカルボシランのグループから選択されている、請求項1〜6のうちのいずれか一項に記載の半導体装置。
- 半導体(2、4、11、12)の表面に対向する下面が、基板(1)と接続されている、請求項1〜7のうちのいずれか一項に記載の半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009000888.8 | 2009-02-16 | ||
DE102009000888A DE102009000888B4 (de) | 2009-02-16 | 2009-02-16 | Halbleiteranordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010199578A true JP2010199578A (ja) | 2010-09-09 |
JP5674321B2 JP5674321B2 (ja) | 2015-02-25 |
Family
ID=42181148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010029973A Expired - Fee Related JP5674321B2 (ja) | 2009-02-16 | 2010-02-15 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8564126B2 (ja) |
EP (1) | EP2219213B1 (ja) |
JP (1) | JP5674321B2 (ja) |
KR (1) | KR101630879B1 (ja) |
CN (1) | CN101807565B (ja) |
DE (1) | DE102009000888B4 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012222012B4 (de) * | 2012-11-30 | 2017-04-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung |
DE102013108185B4 (de) | 2013-07-31 | 2021-09-23 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung |
DE102015116165A1 (de) | 2015-09-24 | 2017-03-30 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung |
DE102022111579A1 (de) | 2022-05-10 | 2023-11-16 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06177186A (ja) * | 1992-08-31 | 1994-06-24 | Dow Corning Corp | 気密封止された集積回路及び集積回路を気密封止する方法 |
JPH10107024A (ja) * | 1996-06-05 | 1998-04-24 | Dow Corning Corp | 電子装置に保護被膜を形成する方法 |
WO2008133211A1 (ja) * | 2007-04-20 | 2008-11-06 | Denki Kagaku Kogyo Kabushiki Kaisha | 熱伝導性コンパウンドおよびその製造方法 |
Family Cites Families (12)
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US5654246A (en) * | 1985-02-04 | 1997-08-05 | Lanxide Technology Company, Lp | Methods of making composite ceramic articles having embedded filler |
US5436083A (en) * | 1994-04-01 | 1995-07-25 | Dow Corning Corporation | Protective electronic coatings using filled polysilazanes |
DE69606942T2 (de) * | 1995-09-25 | 2000-10-05 | Dow Corning | Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik |
US6319740B1 (en) * | 1995-10-27 | 2001-11-20 | Honeywell International Inc. | Multilayer protective coating for integrated circuits and multichip modules and method of applying same |
US6624216B2 (en) | 2002-01-31 | 2003-09-23 | National Starch And Chemical Investment Holding Corporation | No-flow underfill encapsulant |
US6940173B2 (en) * | 2003-01-29 | 2005-09-06 | International Business Machines Corporation | Interconnect structures incorporating low-k dielectric barrier films |
DE10340438B4 (de) * | 2003-09-02 | 2005-08-04 | Epcos Ag | Sendemodul mit verbesserter Wärmeabführung |
DE10355925B4 (de) | 2003-11-29 | 2006-07-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren seiner Herstellung |
US20060062985A1 (en) * | 2004-04-26 | 2006-03-23 | Karandikar Prashant G | Nanotube-containing composite bodies, and methods for making same |
DE102006013078B4 (de) * | 2006-03-22 | 2008-01-03 | Semikron Elektronik Gmbh & Co. Kg | Kompaktes Leistungshalbleitermodul mit Verbindungseinrichtung |
DE102007006706B4 (de) * | 2007-02-10 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu |
US8637627B2 (en) * | 2007-12-06 | 2014-01-28 | Rohm And Haas Company | Phenoxyphenyl polysiloxane composition and method for making and using same |
-
2009
- 2009-02-16 DE DE102009000888A patent/DE102009000888B4/de not_active Expired - Fee Related
- 2009-12-24 EP EP09016022A patent/EP2219213B1/de not_active Not-in-force
-
2010
- 2010-02-11 US US12/704,289 patent/US8564126B2/en not_active Expired - Fee Related
- 2010-02-12 CN CN201010119271.0A patent/CN101807565B/zh not_active Expired - Fee Related
- 2010-02-12 KR KR1020100013316A patent/KR101630879B1/ko active IP Right Grant
- 2010-02-15 JP JP2010029973A patent/JP5674321B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177186A (ja) * | 1992-08-31 | 1994-06-24 | Dow Corning Corp | 気密封止された集積回路及び集積回路を気密封止する方法 |
JPH10107024A (ja) * | 1996-06-05 | 1998-04-24 | Dow Corning Corp | 電子装置に保護被膜を形成する方法 |
WO2008133211A1 (ja) * | 2007-04-20 | 2008-11-06 | Denki Kagaku Kogyo Kabushiki Kaisha | 熱伝導性コンパウンドおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101807565A (zh) | 2010-08-18 |
EP2219213A3 (de) | 2010-11-03 |
US8564126B2 (en) | 2013-10-22 |
DE102009000888A1 (de) | 2010-08-26 |
DE102009000888B4 (de) | 2011-03-24 |
CN101807565B (zh) | 2015-05-13 |
KR20100093493A (ko) | 2010-08-25 |
EP2219213B1 (de) | 2012-07-25 |
EP2219213A2 (de) | 2010-08-18 |
JP5674321B2 (ja) | 2015-02-25 |
US20100264537A1 (en) | 2010-10-21 |
KR101630879B1 (ko) | 2016-06-15 |
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