JP2010192877A5 - Semiconductor device - Google Patents

Claims (1)

基板上にトランジスタを有する半導体装置であって、A semiconductor device having a transistor on a substrate,
前記トランジスタは、導電層と、第１の絶縁層と、第２の絶縁層と、半導体層と、を有し、The transistor includes a conductive layer, a first insulating layer, a second insulating layer, and a semiconductor layer.
前記導電層は、前記第１の絶縁層と前記第２の絶縁層とを介して、前記半導体層と重なる領域を有し、The conductive layer has a region overlapping with the semiconductor layer via the first insulating layer and the second insulating layer,
前記第１の絶縁層は、窒素と珪素とを含み、The first insulating layer contains nitrogen and silicon,
前記第２の絶縁層は、酸素と珪素とを含み、The second insulating layer contains oxygen and silicon,
前記半導体層は、The semiconductor layer is
前記基板表面の法線方向に沿って成長した結晶を有する第１の領域と、A first region having a crystal grown along the normal direction of the substrate surface;
非晶質を有する第２の領域と、A second region having an amorphous state;
前記第１の領域と前記第２の領域の間に設けられ、前記結晶と非晶質とが混在した第３の領域と、を有し、And a third region provided between the first region and the second region and in which the crystal and the amorphous are mixed,
前記半導体層において、二次イオン質量分析法によって計測される窒素濃度は、前記第１の領域と前記第３の領域との界面近傍においてピークを有することを特徴とする半導体装置。In the semiconductor layer, a nitrogen concentration measured by secondary ion mass spectrometry has a peak in the vicinity of an interface between the first region and the third region.