JP2010187031A - Chip type light emitting element - Google Patents

Chip type light emitting element Download PDF

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Publication number
JP2010187031A
JP2010187031A JP2010124127A JP2010124127A JP2010187031A JP 2010187031 A JP2010187031 A JP 2010187031A JP 2010124127 A JP2010124127 A JP 2010124127A JP 2010124127 A JP2010124127 A JP 2010124127A JP 2010187031 A JP2010187031 A JP 2010187031A
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light emitting
chip
insulating substrate
type light
emitting element
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Hiromoto Ishinaga
宏基 石長
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To enter a joint part in the occupation area of an element in a plan view when a structure of a chip type light emitting element is mounted on a wiring board. <P>SOLUTION: In this chip type light emitting element, a pair of internal electrodes 2 and external electrodes 5 are arranged on one-side surface 1a of an insulating board 1 formed of a ceramic and on the other-side surface 1c thereof, respectively. They are electrically connected to each other by conductive materials 7 filled in through-holes 6 bored in the insulating substrate 1. A light emitter chip 3 is die-bonded to one-side of the internal electrodes 2, and jointed to the other-side internal electrode 2 by a bonding wire 4. The light emitter chip 3, the bonding wire 4 and the joint parts between them and the internal electrodes 2 are protected by a translucent member 8. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、パイロットランプ等に用いられるチップ型発光素子の構造に関する。   The present invention relates to a structure of a chip-type light emitting device used for a pilot lamp or the like.

図５は、従来のチップ型発光素子を配線基板上にはんだを用いて接続した状態を示した図解的な断面図である。絶縁性基板５１の一方表面５１ａに一対の内部電極５２が設けられ、その一方にＬＥＤなどの発光体チップ５３がダイ・ボンディングされている。この発光体チップ５３と他方の内部電極５２とはボンディングワイヤー５４で接続されている。内部電極５２は絶縁性基板５１の端部近傍で、外部電極５５と接続されている。   FIG. 5 is a schematic cross-sectional view showing a state in which a conventional chip-type light emitting element is connected to a wiring board using solder. A pair of internal electrodes 52 are provided on one surface 51a of the insulating substrate 51, and a light emitting chip 53 such as an LED is die-bonded on one of the electrodes. The light emitting chip 53 and the other internal electrode 52 are connected by a bonding wire 54. The internal electrode 52 is connected to the external electrode 55 in the vicinity of the end of the insulating substrate 51.

発光体チップ５３、ボンディングワイヤー５４、およびそれらと内部電極５２との接合部を含む領域は、透光性部材５６によって保護されている。外部電極５５は、端面５１ｂを覆うように絶縁性基板５１端部に形成されている。   The light emitting chip 53, the bonding wire 54, and the region including the joint portion between them and the internal electrode 52 are protected by the light transmissive member 56. The external electrode 55 is formed at the end of the insulating substrate 51 so as to cover the end surface 51b.

このような構成のチップ型発光素子を、はんだ５７で配線基板５９上の電極パッド５８に接合する際、接合部、すなわちはんだ５７が存在する部分は、チップ型発光素子自身の占有面積をはみだし、チップ端面側方に接合のためだけに要する領域Ｃが生じていた。
このため、配線基板上の配線や各種電子部品は、このはんだ付けのための領域を避けて配さねばならなかったため、各種部品の実装密度が低くなるという問題があった。 When the chip-type light emitting device having such a structure is joined to the electrode pad 58 on the wiring board 59 with the solder 57, the joint portion, that is, the portion where the solder 57 is present protrudes the area occupied by the chip-type light emitting device itself, A region C required only for bonding was formed on the side of the chip end face.
For this reason, wiring and various electronic components on the wiring board had to be arranged avoiding the area for soldering, and there was a problem that the mounting density of various components was low.

そこで、この発明の目的は、実装時の占有面積を少なくすることができ、これにより配線基板上への部品の高密度実装を可能とするチップ型発光素子を提供することである。   SUMMARY OF THE INVENTION An object of the present invention is to provide a chip-type light emitting device that can reduce an occupied area during mounting, thereby enabling high-density mounting of components on a wiring board.

上記の目的を達成するための請求項１記載の発明は、一方表面に内部電極が設けられており、セラミックからなる絶縁性基板と、この絶縁性基板の前記一方表面上に設けられ、前記内部電極と接続された発光体チップと、前記絶縁性基板の他方表面に設けられ、前記絶縁性基板内部に形成された配線部材を介して前記内部電極に電気的に接続された外部電極とを含むことを特徴とするチップ型発光素子である。   In order to achieve the above object, the invention according to claim 1 is characterized in that an internal electrode is provided on one surface, an insulating substrate made of ceramic, and provided on the one surface of the insulating substrate. A light emitting chip connected to the electrode, and an external electrode provided on the other surface of the insulating substrate and electrically connected to the internal electrode via a wiring member formed inside the insulating substrate. This is a chip-type light emitting device.

この発明によれば、チップ型発光素子の外部電極は、絶縁性基板の底面（発光体チップ実装面とは反対側の表面）に形成されている。したがって、このチップ型発光素子を、配線基板上の電極パッドにはんだ付けして実装する場合、接合部の大半はこのチップ型発光素子自身の占有面積内に入る。これにより、配線基板上におけるチップ型発光素子の実質的な占有面積を低減でき、電子部品等の高密度実装が可能となる。   According to the present invention, the external electrode of the chip type light emitting element is formed on the bottom surface of the insulating substrate (surface opposite to the light emitting chip mounting surface). Therefore, when this chip type light emitting element is mounted by soldering to the electrode pad on the wiring board, most of the joint portion falls within the area occupied by the chip type light emitting element itself. Thereby, the substantial occupation area of the chip-type light emitting element on the wiring board can be reduced, and high-density mounting of electronic components and the like is possible.

請求項２記載の発明は、前記配線部材は、前記絶縁性基板に形成された貫通孔内に配置された導電材を含むことを特徴とする請求項１記載のチップ型発光素子である。
この発明においては、絶縁性基板に設けられた貫通孔内に配置した導電材により内部電極と外部電極との電気接続を達成するという単純な構造とすることにより、素子を安価なものとすることができる。 The invention according to claim 2 is the chip-type light emitting device according to claim 1, wherein the wiring member includes a conductive material disposed in a through hole formed in the insulating substrate.
In the present invention, the element is made inexpensive by adopting a simple structure in which electrical connection between the internal electrode and the external electrode is achieved by a conductive material disposed in a through-hole provided in the insulating substrate. Can do.

請求項３記載の発明は、前記貫通孔が前記導電材で満たされていることを特徴とする請求項２記載のチップ型発光素子である。貫通孔に満たされた導電材は、その表面が絶縁性基板の表面と面一になっていることが好ましい。
貫通孔内部を導電材で満たすことにより、貫通孔直上に内部電極を設けた場合に、この内部電極に対して、発光体チップからのボンディングワイヤーを良好に接合できる。すなわち、ワイヤーボンディング時に、与えた超音波が効率的に接合部に伝わるため、容易に接合を達成できる。 The invention according to claim 3 is the chip type light emitting element according to claim 2, wherein the through hole is filled with the conductive material. The surface of the conductive material filled in the through holes is preferably flush with the surface of the insulating substrate.
By filling the inside of the through hole with a conductive material, when an internal electrode is provided immediately above the through hole, a bonding wire from the light emitting chip can be satisfactorily bonded to the internal electrode. That is, since the applied ultrasonic wave is efficiently transmitted to the joint during wire bonding, the joining can be easily achieved.

請求項４記載の発明は、前記絶縁性基板の側面には、いずれの外部電極も形成されていないことを特徴とする請求項１ないし３のいずれかに記載のチップ型発光素子である。
この発明によれば、配線基板上に実装された場合、はんだ接合部の大半がこのチップ型発光素子の占有面積内に入る。
請求項５記載の発明は、前記外部電極は、前記絶縁性基板の側面から内方に間隔をあけて、前記他方表面上に形成されていることを特徴とする請求項１ないし４のいずれかに記載のチップ型発光素子である。 A fourth aspect of the present invention is the chip type light emitting device according to any one of the first to third aspects, wherein any external electrode is not formed on a side surface of the insulating substrate.
According to the present invention, when mounted on the wiring board, most of the solder joints fall within the area occupied by the chip-type light emitting device.
The invention according to claim 5 is characterized in that the external electrode is formed on the other surface at a distance inward from the side surface of the insulating substrate. It is a chip type light emitting element as described in above.

この発明によれば、外部電極は絶縁性基板の側面から距離をあけて設けられている。したがって、配線基板との接合時に、平面視において、接合部のほぼ全部がこのチップ型発光素子の占有面積内に入る。
請求項６記載の発明は、前記絶縁性基板の側面と面一の側面を有し、前記発光体チップの周囲を被覆する透光性部材をさらに含むことを特徴とする請求項１ないし５のいずれかに記載のチップ型発光素子である。 According to the present invention, the external electrode is provided at a distance from the side surface of the insulating substrate. Therefore, at the time of bonding to the wiring board, almost all of the bonding portion falls within the area occupied by the chip-type light emitting element in plan view.
The invention according to claim 6 further includes a translucent member having a side surface flush with the side surface of the insulating substrate and covering the periphery of the light emitting chip. A chip-type light emitting device according to any one of the above.

チップ型発光素子を１．０ｍｍ×０．５ｍｍサイズ等の小型サイズに構成する場合、絶縁性基板上において透光性部材による被覆部の占める面積割合が大きくなる。しかし、この発明によれば、絶縁性基板の底面に外部電極が設けられ、その底面側において配線基板への接合を行う構成である。したがって、チップ型発光素子端部付近において絶縁性基板の表面を露出させておく必要がない。そこで、絶縁性基板の側面とほぼ面一の状態で透光性部材を配置して発光体チップの周囲を被覆することにより、素子の小型化が容易になるとともに、構造が簡単になり、生産性を向上させることができる。   When the chip-type light emitting device is configured in a small size such as 1.0 mm × 0.5 mm, the area ratio of the covering portion by the translucent member on the insulating substrate is increased. However, according to the present invention, the external electrode is provided on the bottom surface of the insulating substrate, and bonding to the wiring substrate is performed on the bottom surface side. Therefore, it is not necessary to expose the surface of the insulating substrate in the vicinity of the end of the chip type light emitting element. Therefore, by arranging the translucent member so as to be almost flush with the side surface of the insulating substrate and covering the periphery of the light emitting chip, the device can be easily downsized and the structure can be simplified and produced. Can be improved.

本発明の一実施形態に係るチップ型発光素子の図解的な断面図である。1 is a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention. 図１のチップ型発光素子の図解的な底面図である。FIG. 2 is a schematic bottom view of the chip type light emitting device of FIG. 1. 絶縁性基板の構造の変形例を示す図解的な断面図でる。It is an illustration sectional view showing the modification of the structure of an insulating substrate. 本発明の他の実施形態に係るチップ型発光素子の図解的な断面図である。It is an illustration sectional view of a chip type light emitting element concerning other embodiments of the present invention. 従来の一般的なチップ型発光素子の図解的な断面図である。It is an illustration sectional view of the conventional general chip type light emitting element.

以下では、この発明の実施の形態を、添付図面を参照して詳細に説明する。
図１は、本発明の一実施例に係るチップ型発光素子の構成を示す図解的な断面図である。
このチップ型発光素子は、絶縁性基板１上に発光体チップ３を実装し、この発光体チップ３を透光性部材８で封止した構造を有している。すなわち、絶縁性基板１の一方表面１ａに、一対の内部電極２が形成され、その一方に発光体チップ３がダイ・ボンディングされ、これと他方の内部電極２とがボンディングワイヤー４で電気的に接続されている。絶縁性基板１は、セラミックからなる。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic cross-sectional view showing the configuration of a chip-type light emitting device according to an embodiment of the present invention.
This chip-type light emitting element has a structure in which a light emitting chip 3 is mounted on an insulating substrate 1 and the light emitting chip 3 is sealed with a translucent member 8. That is, a pair of internal electrodes 2 is formed on one surface 1 a of the insulating substrate 1, and a light-emitting chip 3 is die-bonded on one of them, and this and the other internal electrode 2 are electrically connected by a bonding wire 4. It is connected. The insulating substrate 1 is made of ceramic.

本実施形態においては、内部電極２は絶縁性基板１側よりＣｕ（２ａ）、Ｎｉ（２ｂ）、Ａｕ（２ｃ）の３層により構成される。導電性の高いＣｕを基材とすることにより低抵抗が得られる。これを適度な硬度を持つＮｉで被覆することによりワイヤー・ボンディング時の作業性が向上する。さらにこれを耐候性の高いＡｕで被覆することにより電極部材の特性を経時的に一定に保っている。   In the present embodiment, the internal electrode 2 is composed of three layers of Cu (2a), Ni (2b), and Au (2c) from the insulating substrate 1 side. Low resistance can be obtained by using Cu having high conductivity as a base material. By covering this with Ni having an appropriate hardness, workability during wire bonding is improved. Further, by covering this with Au having high weather resistance, the characteristics of the electrode member are kept constant over time.

内部電極２ａは、絶縁性基板１にあけられた貫通孔６に満たされた導電材７によって、絶縁性基板１の他方表面１ｃに形成された外部電極５と電気的に接続されている。外部電極５は内部電極２と同様、絶縁性基板１側よりＣｕ（５ａ）、Ｎｉ（５ｂ）、Ａｕ（５ｃ）の３層により構成される。導電材７の材質としてはＣｕなど低抵抗のものを用いることが好ましい。   The internal electrode 2 a is electrically connected to the external electrode 5 formed on the other surface 1 c of the insulating substrate 1 by a conductive material 7 filled in the through hole 6 formed in the insulating substrate 1. As with the internal electrode 2, the external electrode 5 is composed of three layers of Cu (5a), Ni (5b), and Au (5c) from the insulating substrate 1 side. As the material of the conductive material 7, it is preferable to use a low resistance material such as Cu.

絶縁性基板１の表面１ａ上において、発光体チップ３、ボンディングワイヤー４、およびそれらと内部電極２ｃとの接合部を含む領域は、透光性部材８によって保護されている。
図２は、図１に示すチップ型発光素子を矢印Ａの方向から見た図解的な底面図である。外部電極５は、絶縁性基板１の側面１ｂから一定の距離Ｂ１、Ｂ２をあけて配されている。絶縁性基板１の側面１ｂには、いずれの電極も形成されておらず、この側面１ｂは全周にわたってはんだぬれ性のない表面を呈している。 On the surface 1 a of the insulating substrate 1, the region including the light emitting chip 3, the bonding wire 4, and the joint portion between them and the internal electrode 2 c is protected by the translucent member 8.
2 is a schematic bottom view of the chip-type light emitting device shown in FIG. The external electrode 5 is arranged at a certain distance B1 and B2 from the side surface 1b of the insulating substrate 1. No electrode is formed on the side surface 1b of the insulating substrate 1, and the side surface 1b exhibits a surface without solder wettability over the entire circumference.

このような構造を採ることにより、このチップ型発光素子を外部電極５を介して配線基板１４上の電極パッド１３に、はんだ１２により接続する際、接合部、すなわちはんだ１２が存在する部分は、平面視において、すべてチップ型発光素子自身の占有面積内に入る。したがって、はんだ接合のためだけに要する領域を配線基板１４上に確保する必要がない。   By adopting such a structure, when this chip-type light emitting element is connected to the electrode pad 13 on the wiring board 14 via the external electrode 5 by the solder 12, the joint portion, that is, the portion where the solder 12 exists, In plan view, all are within the area occupied by the chip-type light emitting element itself. Therefore, it is not necessary to secure an area required only for solder joining on the wiring board 14.

したがって図１に示すように、配線基板１４上に、電極パッド１３や配線１５をごく近接して配置することが可能となり、はんだ１２を用いて部品を実装する際に、隣合った電極パッドや配線間で、ブリッジと呼ばれるはんだによる短絡が生ずることがない。
とくに、この実施形態の構成では、図２に示すように、外部電極５は、絶縁性基板１の側面１ｂから一定の距離Ｂ１やＢ２をもって配されている。そのため、配線基板１４への接合の際、はんだが外部電極５の面積の外に多少はみ出しても、ブリッジが生ずることはない。 Therefore, as shown in FIG. 1, it is possible to arrange the electrode pads 13 and the wirings 15 on the wiring board 14 in close proximity, and when mounting components using the solder 12, There is no short circuit between the wires due to solder called a bridge.
In particular, in the configuration of this embodiment, as shown in FIG. 2, the external electrode 5 is arranged at a certain distance B <b> 1 or B <b> 2 from the side surface 1 b of the insulating substrate 1. For this reason, even when the solder protrudes out of the area of the external electrode 5 at the time of joining to the wiring board 14, no bridge is generated.

ワイヤー・ボンディングの作業性の面では、貫通孔６は、図１に示すように導電材７によって完全に満たされていることが望ましいが、図３に示すごとく貫通孔６の一部のみを導電材７Ａで満たすことも可能である。すなわち、ワイヤー・ボンディングの際、ボンディングワイヤー４を接続すべき内部電極２の下部は、図１のように中実であった方が、図３のように中空であった場合に比して、与えた超音波が効率的に接合部に伝わるため、接合が容易なものとなる。   In terms of workability of wire bonding, the through hole 6 is preferably completely filled with the conductive material 7 as shown in FIG. 1, but only a part of the through hole 6 is electrically conductive as shown in FIG. It is also possible to fill with material 7A. That is, at the time of wire bonding, the lower part of the internal electrode 2 to which the bonding wire 4 is to be connected is solid as shown in FIG. Since the applied ultrasonic wave is efficiently transmitted to the joining portion, joining becomes easy.

ただし、ワイヤー・ボンディングの作業性が問題にならない場合、たとえば、内部電極２の領域内で貫通孔６の直上でない部分でボンディングする場合など、図３のような構造を採ることができる。
図３の構造は、絶縁性基板１の一方表面１ａに内部電極２を形成後、他方表面１ｃより、レーザなどにより貫通孔６をあけ、貫通孔６内面を含む所定部分にメッキをすることなどにより得られる。この構造では、絶縁性基板１の底面１ｃより外部電極９と内部電極２とを電気的に接続する導電材７Ａは、外部電極９と一体化された導電膜からなっている。 However, when workability of wire bonding does not become a problem, for example, when bonding is performed at a portion not directly above the through hole 6 in the region of the internal electrode 2, a structure as shown in FIG. 3 can be adopted.
In the structure of FIG. 3, after forming the internal electrode 2 on the one surface 1 a of the insulating substrate 1, a through hole 6 is formed from the other surface 1 c with a laser or the like, and a predetermined portion including the inner surface of the through hole 6 is plated. Is obtained. In this structure, the conductive material 7 A that electrically connects the external electrode 9 and the internal electrode 2 from the bottom surface 1 c of the insulating substrate 1 is made of a conductive film integrated with the external electrode 9.

図４は、本発明の他の実施形態に係るチップ型発光素子の図解的な断面図である。この実施形態では、透光性部材８の端面８ｂが、絶縁性基板１の側面１ｂと、全周にわたって面一に形成されて、発光体チップ３の周囲を被覆している。外部電極５は部品底部にあるので、透光性部材８は従来の構成の場合（図５）のように、絶縁性基板１の表面１ａ側に露出部を確保した状態で設ける必要がなく、絶縁性基板１の側面１ｂとほぼ面一に形成して差し支えない。   FIG. 4 is a schematic cross-sectional view of a chip-type light emitting device according to another embodiment of the present invention. In this embodiment, the end surface 8 b of the translucent member 8 is formed flush with the side surface 1 b of the insulating substrate 1 over the entire circumference and covers the periphery of the light emitting chip 3. Since the external electrode 5 is located at the bottom of the component, the translucent member 8 does not need to be provided in a state where an exposed portion is secured on the surface 1a side of the insulating substrate 1 as in the conventional configuration (FIG. 5). The insulating substrate 1 may be formed substantially flush with the side surface 1b.

上述のような構成を採れば、複数個の素子分の導電材６、内部電極２、および外部電極５を形成した大きな絶縁性基板１上に、素子数分の発光体チップ３およびボンディング・ワイヤー４を設けた後、この大きな絶縁性基板１のほぼ全面を覆う透光性部材８を形成し、その後に個々の素子に切出すという製造方法を採ることが可能である。この方法によれば、複数個の素子の透光性部材８を一括で形成できるので生産性が向上する。   If the configuration as described above is adopted, the light emitting device chips 3 and bonding wires corresponding to the number of elements are formed on the large insulating substrate 1 on which the conductive material 6, the internal electrodes 2 and the external electrodes 5 for a plurality of elements are formed. 4 is provided, a translucent member 8 that covers substantially the entire surface of the large insulating substrate 1 is formed, and thereafter, a manufacturing method of cutting into individual elements can be employed. According to this method, the translucent member 8 of a plurality of elements can be formed at a time, so that productivity is improved.

これに対して、図５のような従来構造のチップ型発光素子においては、外部電極５５は絶縁性基板５１を所定の大きさに切り出した後に形成、その後に透光性部材５６を形成しなければならない。
チップ型発光素子と配線基板との接合は、はんだ以外に導電性接着剤を用いて作ることもできる。 On the other hand, in the chip type light emitting device having the conventional structure as shown in FIG. 5, the external electrode 55 is formed after the insulating substrate 51 is cut out to a predetermined size, and then the translucent member 56 is formed. I must.
The chip-type light emitting element and the wiring board can be joined using a conductive adhesive other than solder.

１ 絶縁性基板
１ａ 絶縁性基板表面
１ｂ 絶縁性基板側面
１ｃ 絶縁性基板底面
２ 内部電極
３ 発光体チップ
４ ボンディングワイヤー
５ 外部電極
６ 貫通孔
７ 導電材
８ 透光性部材
９ 外部電極
１２ はんだ
１４ 配線基板 DESCRIPTION OF SYMBOLS 1 Insulating substrate 1a Insulating substrate surface 1b Insulating substrate side surface 1c Insulating substrate bottom face 2 Internal electrode 3 Light emitting chip 4 Bonding wire 5 External electrode 6 Through hole 7 Conductive material 8 Translucent member 9 External electrode 12 Solder 14 Wiring substrate

Claims (6)

一方表面に内部電極が設けられており、セラミックからなる絶縁性基板と、
この絶縁性基板の前記一方表面上に設けられ、前記内部電極と接続された発光体チップと、
前記絶縁性基板の他方表面に設けられ、前記絶縁性基板内部に形成された配線部材を介して前記内部電極に電気的に接続された外部電極とを含むことを特徴とするチップ型発光素子。 On the other hand, an internal electrode is provided on the surface, an insulating substrate made of ceramic,
A light emitting chip provided on the one surface of the insulating substrate and connected to the internal electrode;
A chip-type light emitting device comprising an external electrode provided on the other surface of the insulating substrate and electrically connected to the internal electrode through a wiring member formed inside the insulating substrate. 前記配線部材は、前記絶縁性基板に形成された貫通孔内に配置された導電材を含むことを特徴とする請求項１記載のチップ型発光素子。   The chip-type light emitting device according to claim 1, wherein the wiring member includes a conductive material disposed in a through hole formed in the insulating substrate. 前記貫通孔が前記導電材で満たされていることを特徴とする請求項２記載のチップ型発光素子。   The chip-type light emitting device according to claim 2, wherein the through hole is filled with the conductive material. 前記絶縁性基板の側面には、いずれの外部電極も形成されていないことを特徴とする請求項１ないし３のいずれかに記載のチップ型発光素子。   4. The chip-type light emitting device according to claim 1, wherein any external electrode is not formed on a side surface of the insulating substrate. 前記外部電極は、前記絶縁性基板の側面から内方に間隔をあけて、前記他方表面上に形成されていることを特徴とする請求項１ないし４のいずれかに記載のチップ型発光素子。   5. The chip-type light emitting device according to claim 1, wherein the external electrode is formed on the other surface with a space inward from a side surface of the insulating substrate. 前記絶縁性基板の側面とほぼ面一の側面を有し、前記発光体チップの周囲を被覆する透光性部材をさらに含むことを特徴とする請求項１ないし５のいずれかに記載のチップ型発光素子。   6. The chip type according to claim 1, further comprising a translucent member having a side surface substantially flush with a side surface of the insulating substrate and covering the periphery of the light emitting chip. Light emitting element.
JP2010124127A 2010-05-31 2010-05-31 Chip type light emitting element Pending JP2010187031A (en)

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JPH0945965A (en) * 1995-07-26 1997-02-14 Nichia Chem Ind Ltd Ceramic led package and manufacture thereof
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JPH118414A (en) * 1997-06-18 1999-01-12 Sony Corp Semiconductor device and semiconductor light-emitting device
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