JP2010139268A - Pattern light emitting device - Google Patents

Pattern light emitting device Download PDF

Info

Publication number
JP2010139268A
JP2010139268A JP2008313598A JP2008313598A JP2010139268A JP 2010139268 A JP2010139268 A JP 2010139268A JP 2008313598 A JP2008313598 A JP 2008313598A JP 2008313598 A JP2008313598 A JP 2008313598A JP 2010139268 A JP2010139268 A JP 2010139268A
Authority
JP
Japan
Prior art keywords
light emitting
pattern
light
linear
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008313598A
Other languages
Japanese (ja)
Other versions
JP5438308B2 (en
Inventor
Yukio Sato
幸男 佐藤
Susumu Shibata
進 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPACE VISION KK
Original Assignee
SPACE VISION KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPACE VISION KK filed Critical SPACE VISION KK
Priority to JP2008313598A priority Critical patent/JP5438308B2/en
Publication of JP2010139268A publication Critical patent/JP2010139268A/en
Application granted granted Critical
Publication of JP5438308B2 publication Critical patent/JP5438308B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern light emitting device for measuring a three-dimensional shape for which working of manufacturing such as wiring is less troublesome. <P>SOLUTION: An LED chip includes an element array having a plurality of string LED elements arranged in a direction perpendicular to an extending direction of the elements. The element array is produced by a semiconductor process. Each of the string LED elements has a p-side electrode 108 extending like a string and the electrodes are separated by element separation grooves 110 from one another. The string LED elements are formed on a common substrate 120 and an n-side electrode 130 commonly used by all of the elements is formed at the lower side of the substrate 120. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、三次元形状計測用のパターン光を発光するパターン光発光装置に関する。   The present invention relates to a pattern light emitting device that emits pattern light for three-dimensional shape measurement.

能動的ステレオ法により対象物表面の各点の三次元位置を計測するシステム（アクティブ・レンジファインダとも呼ばれる）が普及している。この種のシステムでは、対象物表面上の点を特定するために対象物に光を投影し、光が投影された状態の対象物をカメラで撮影する。例えば、光切断法では、レーザ光源などにより形成されるスリット光で対象物を走査する。また、空間コード化法や位相シフト法では、例えば光源と液晶シャッタにより縞模様のパターン光を形成して対象物に投影する。   A system (also called an active range finder) that measures the three-dimensional position of each point on the surface of an object by the active stereo method has become widespread. In this type of system, light is projected onto an object in order to specify a point on the surface of the object, and the object in a state where the light is projected is photographed with a camera. For example, in the light cutting method, an object is scanned with slit light formed by a laser light source or the like. In the spatial encoding method and the phase shift method, for example, a striped pattern light is formed by a light source and a liquid crystal shutter and projected onto an object.

しかしながら、スリット光を走査する方式は走査機構のために光源ユニットが大型化してしまう。また、光源と液晶シャッタによりパターン光を形成する方式でも、光源から液晶シャッタまでにはある程度の距離を空ける必要があるため、光源ユニットの小型化には限界がある。   However, the method of scanning the slit light increases the size of the light source unit due to the scanning mechanism. In addition, even in a method in which pattern light is formed by a light source and a liquid crystal shutter, it is necessary to provide a certain distance from the light source to the liquid crystal shutter.

これに対し、特許文献１には、点光源として機能する発光ダイオード（ＬＥＤ）素子をマトリクス状に配列したパターン光発光装置が開示されている。この装置では、ＬＥＤ素子の列ごとに発光強度を制御することでパターン光を形成する。   On the other hand, Patent Document 1 discloses a pattern light emitting device in which light emitting diode (LED) elements functioning as point light sources are arranged in a matrix. In this apparatus, pattern light is formed by controlling the light emission intensity for each column of LED elements.

特開２００２−１９５８１２号公報JP 2002-195812 A

しかしながら、点光源として機能するＬＥＤ素子をマトリクス状に配列した発光装置の場合、製造する際に多数のＬＥＤ素子を基板に接続する作業が煩雑である。   However, in the case of a light-emitting device in which LED elements that function as point light sources are arranged in a matrix, it is complicated to connect a large number of LED elements to a substrate during manufacturing.

本発明は、三次元形状計測用のパターン光を発光するパターン光発光装置であって、線状の発光層を持つ線状発光ダイオードを、当該線状発光ダイオードの延伸方向に対して直交する方向に、複数個配列してなる発光アレイ部と、前記発光アレイ部の前記各線状発光ダイオードを所定のスイッチングパターンに従ってスイッチングするスイッチング回路と、を備えるパターン光発光装置を提供する。   The present invention relates to a pattern light emitting device that emits pattern light for measuring a three-dimensional shape, in which a linear light emitting diode having a linear light emitting layer is perpendicular to the extending direction of the linear light emitting diode. Further, there is provided a pattern light emitting device comprising a plurality of light emitting array units arranged and a switching circuit for switching each linear light emitting diode of the light emitting array unit according to a predetermined switching pattern.

１つの態様では、前記各線状発光ダイオードの表面に、それぞれ、当該線状ダイオードの延伸方向の略全長にわたって連続した電極が形成されている。   In one aspect, the continuous electrode is formed in the surface of each said linear light emitting diode over the substantially full length of the extending | stretching direction of the said linear diode, respectively.

更に好適な態様では、前記複数の線状発光ダイオードは共通の基板の一方の面上に形成されており、当該基板の他方の面には前記複数の線状発光ダイオードに共通の電極が形成されている。   In a further preferred aspect, the plurality of linear light emitting diodes are formed on one surface of a common substrate, and an electrode common to the plurality of linear light emitting diodes is formed on the other surface of the substrate. ing.

本発明によれば、配線等の製造作業の繁雑さの少ないパターン光発生装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the pattern light generator with little complexity of manufacturing work, such as wiring, can be provided.

以下、図面を参照して、この発明に係るパターン光発光装置の実施形態を説明する。   Embodiments of a patterned light emitting device according to the present invention will be described below with reference to the drawings.

この実施形態では、三次元形状計測用のパターン光源として、図１に示すＬＥＤチップ１０を用いる。このＬＥＤチップ１０は、線状発光ダイオード（以下「ＬＥＤ」）素子１００が当該ダイオード１００の延伸方向（すなわち線の延びる方向）Ｐに垂直な方向Ｑに沿って複数配列されてなる素子アレイを備える。１チップに形成する線状ＬＥＤ素子１００の本数は、例えば１２８本である（ただしこれはあくまで一例に過ぎない）。また線状ＬＥＤ素子１００は、例えば、幅約０．２ｍｍ及び長さ約１０ｍｍである（ただしこれはあくまで一例に過ぎない）。   In this embodiment, the LED chip 10 shown in FIG. 1 is used as a pattern light source for three-dimensional shape measurement. The LED chip 10 includes an element array in which a plurality of linear light emitting diode (hereinafter “LED”) elements 100 are arranged along a direction Q perpendicular to the extending direction P (that is, a line extending direction) P of the diode 100. . The number of linear LED elements 100 formed in one chip is, for example, 128 (however, this is only an example). The linear LED element 100 has, for example, a width of about 0.2 mm and a length of about 10 mm (however, this is only an example).

ＬＥＤチップ１０の隅の部分Ｒの上面図を図２に示す。この図に示すように、個々の線状ＬＥＤ素子１００は、素子分離溝１１０により相互に分離されている。線状ＬＥＤ素子１００を構成する要素として、上面図である図２では、線状のｐ側電極１０８とｐ型半導体層１０２の上面が示されている。ｐ側電極１０８は、線状ＬＥＤ素子１００のほぼ全長に渡って連続的に延びており、その端部にワイヤボンディング用のパッド部１０８ａが形成されている。このパッド部１０８ａが、ワイヤボンディングにより制御回路に接続される。   A top view of the corner portion R of the LED chip 10 is shown in FIG. As shown in this figure, the individual linear LED elements 100 are separated from each other by element separation grooves 110. As elements constituting the linear LED element 100, FIG. 2, which is a top view, shows the top surfaces of the linear p-side electrode 108 and the p-type semiconductor layer 102. The p-side electrode 108 extends continuously over almost the entire length of the linear LED element 100, and a pad portion 108a for wire bonding is formed at the end thereof. The pad portion 108a is connected to the control circuit by wire bonding.

図示例では、すべてのラインのｐ側電極１０８のパッド部１０８ａが同じ側（図では下側）に設けられているが、これは一例に過ぎない。この代わりに、例えば奇数番目のラインではパッド部１０８ａをラインの上端に設け、偶数番目のラインでは下端に設けるなどと言うように、パッド１０８ａの位置を周期的に上下させてもよい。また、ｐ側電極１０８の両端にパッド部１０８ａを設け、両方のパッド部１０８ａにそれぞれ同じ電源電圧を印加するようにしてもよい。線状のｐ側電極１０８の長手方向にそった各位置での電位は、電源電圧が印加されるパッド部１０８ａからの距離に応じて降下するため発光強度もそれに応じて低下する。ｐ側電極１０８の両側から電源電圧を印加すれば、片側から印加する場合よりも電極１０８の各位置での電位の高低差を小さくし、発光強度のばらつきを小さくすることができる。   In the illustrated example, the pad portions 108a of the p-side electrodes 108 of all the lines are provided on the same side (lower side in the figure), but this is only an example. Instead, for example, the pad portion 108a may be provided at the upper end of the odd-numbered line and the lower end of the even-numbered line may be provided at the lower end. Alternatively, pad portions 108a may be provided at both ends of the p-side electrode 108, and the same power supply voltage may be applied to both pad portions 108a. Since the potential at each position along the longitudinal direction of the linear p-side electrode 108 decreases according to the distance from the pad portion 108a to which the power supply voltage is applied, the emission intensity also decreases accordingly. If the power supply voltage is applied from both sides of the p-side electrode 108, the difference in potential at each position of the electrode 108 can be reduced and the variation in emission intensity can be reduced compared to the case where the power supply voltage is applied from one side.

図２におけるＡＡ線に沿った断面のうち４本の線状ＬＥＤ素子１００が並んだ部分を図３に示す。図３に示すように、ＬＥＤチップ１０の基板１２０は基板１２０を基礎としている。基板１２０の材質は特に限定されない。例えばＧａＡｓ（ガリウムヒ素）などの材料を用いればよい。   FIG. 3 shows a portion where four linear LED elements 100 are arranged in the cross section taken along the line AA in FIG. As shown in FIG. 3, the substrate 120 of the LED chip 10 is based on the substrate 120. The material of the substrate 120 is not particularly limited. For example, a material such as GaAs (gallium arsenide) may be used.

基板１２０の一方の面全体に渡ってｎ側電極１３０が形成されている。このｎ側電極１３０は、全ての線状ＬＥＤ素子１０についての共通電極となる。   An n-side electrode 130 is formed over the entire surface of the substrate 120. The n-side electrode 130 is a common electrode for all the linear LED elements 10.

基板１２０のもう一方の面には、基板１２０に近い順に、ｎ型半導体層１０６，発光層１０４，ｐ型半導体層１０２が積層形成されている。そして、ｐ型半導体層１０２の上に線状のｐ側電極１０８が複数形成されている。ｐ側電極１０８は、１つの線状ＬＥＤ素子ごとに１つ設けられる。   On the other surface of the substrate 120, an n-type semiconductor layer 106, a light emitting layer 104, and a p-type semiconductor layer 102 are stacked in the order closer to the substrate 120. A plurality of linear p-side electrodes 108 are formed on the p-type semiconductor layer 102. One p-side electrode 108 is provided for each linear LED element.

ｎ型半導体層１０６，発光層１０４及びｐ型半導体層１０２は素子分離溝１１０により素子ごとに分離されている。図示例では、素子分離溝１１０はｐ型半導体層１０２の上面からｎ型半導体層１０２の途中までの深さであるが、これは一例に過ぎない。素子分離溝１１０の深さは、発光層１０４を完全に切断する深さ以上であればよい。   The n-type semiconductor layer 106, the light emitting layer 104, and the p-type semiconductor layer 102 are separated for each element by an element isolation groove 110. In the illustrated example, the element isolation trench 110 has a depth from the upper surface of the p-type semiconductor layer 102 to the middle of the n-type semiconductor layer 102, but this is only an example. The depth of the element isolation groove 110 may be equal to or greater than the depth at which the light emitting layer 104 is completely cut.

ｎ型半導体層１０６，発光層１０４及びｐ型半導体層１０２の材質は、本実施形態の構成上特に限定されない。通常ＬＥＤに用いられる様々なものを用いることができる。また、ｎ側電極１３０及びｐ側電極１０８は、通常ＬＥＤの電極に用いられる材料（例えば金）で形成すればよい。   The materials of the n-type semiconductor layer 106, the light emitting layer 104, and the p-type semiconductor layer 102 are not particularly limited due to the configuration of this embodiment. Various things normally used for LED can be used. The n-side electrode 130 and the p-side electrode 108 may be formed of a material (for example, gold) that is usually used for an LED electrode.

このようなＬＥＤチップ１０の製造手順の一例を図４に示す。   An example of the manufacturing procedure of such LED chip 10 is shown in FIG.

（ａ）まず、ウエハ状の基板１２０の一方の面に金蒸着などによりｎ側電極１３０を形成するとともに、基板１２０のもう一方の面に、エピタキシャル結晶成長法などの手法により、ＬＥＤ動作層、すなわちｎ型半導体層１０６，発光層１０４及びｐ型半導体層１０２を下から（すなわち基板１２０側から）この順に形成する。   (A) First, an n-side electrode 130 is formed on one surface of a wafer-shaped substrate 120 by gold vapor deposition or the like, and an LED operation layer is formed on the other surface of the substrate 120 by a technique such as an epitaxial crystal growth method. That is, the n-type semiconductor layer 106, the light emitting layer 104, and the p-type semiconductor layer 102 are formed in this order from the bottom (that is, from the substrate 120 side).

（ｂ）次に、ｐ型半導体層１０２の上面に、金蒸着などの方法により、所定間隔ごとに並んだ複数の線状のｐ側電極１０８を形成する。なお、ｐ側電極１０８を透明電極とすれば、金などの不透明電極を用いる場合よりも、線状ＬＥＤ素子１００の発光面積を増大させることができる。透明電極には、公知の透明導電材料を用いればよい。   (B) Next, a plurality of linear p-side electrodes 108 arranged at predetermined intervals are formed on the upper surface of the p-type semiconductor layer 102 by a method such as gold vapor deposition. If the p-side electrode 108 is a transparent electrode, the light emitting area of the linear LED element 100 can be increased as compared with the case where an opaque electrode such as gold is used. A known transparent conductive material may be used for the transparent electrode.

（ｃ）そして、ダイシングカットにより素子分離溝１１０を形成する。素子分離溝１１０は、発光層１０４より深い位置まで形成する。ただし、ｎ側電極１３０は切断しない。   (C) Then, an element isolation groove 110 is formed by dicing cut. The element isolation trench 110 is formed to a position deeper than the light emitting layer 104. However, the n-side electrode 130 is not cut.

このようにして素子分離を行った後、ウエハ全体に（電極１０８及び１３０の部分を除いて）保護膜を形成し、チップサイズごとにカットする。そして、このようにしてできたチップのｎ側電極１３０及び各ｐ側電極１０８を、それぞれワイヤボンディングにより制御回路に接続することで、ＬＥＤチップ１０が完成する。   After element isolation is performed in this manner, a protective film is formed on the entire wafer (excluding the portions of the electrodes 108 and 130) and cut for each chip size. Then, the LED chip 10 is completed by connecting the n-side electrode 130 and the p-side electrode 108 of the chip thus formed to the control circuit by wire bonding.

次に、このＬＥＤチップ１０の発光パターン制御のための構成の一例を、図５を参照して説明する。   Next, an example of a configuration for controlling the light emission pattern of the LED chip 10 will be described with reference to FIG.

図５の例は、位相シフト法による三次元形状計測に利用可能な回路構成である。図では、煩雑さを避けるため、チップ１０上の線状ＬＥＤ素子１００のうちの１６本のみを示している。   The example of FIG. 5 is a circuit configuration that can be used for three-dimensional shape measurement by the phase shift method. In the figure, only 16 of the linear LED elements 100 on the chip 10 are shown to avoid complexity.

各線状ＬＥＤ素子１００の一方の端子は電源Ｖｃｃに接続され、他方の端子はスイッチｓｗ０，ｓｗ１，ｓｗ２，…，又はｓｗ７を介してグランドに接続されている。各スイッチｓｗ０，ｓｗ１，ｓｗ２，…，ｓｗ７は、それぞれ素子アレイ中の８つごとの素子に接続されている。隣り合うスイッチｓｗ０，ｓｗ１，ｓｗ２，…，ｓｗ７は素子アレイ内の隣り合う素子１００に接続されている。例えば、ｓｗ０は左から８，１６，…８ｎ番目（ｎは自然数）の素子１００に、ｓｗ１は左から７，１５，…，（８ｎ−１）番目の素子１００に、それぞれ接続されている。   One terminal of each linear LED element 100 is connected to the power supply Vcc, and the other terminal is connected to the ground via the switches sw0, sw1, sw2,. Each of the switches sw0, sw1, sw2,..., Sw7 is connected to every eight elements in the element array. The adjacent switches sw0, sw1, sw2,..., Sw7 are connected to the adjacent elements 100 in the element array. For example, sw0 is connected to the 8,100,..., 8nth element 100 (n is a natural number) from the left, and sw1 is connected to the 7,15,..., (8n-1) th element 100 from the left.

各スイッチｓｗ０，ｓｗ１，ｓｗ２，…，ｓｗ７は、制御回路２００によりオン・オフ制御される。位相シフト法のためのこれらスイッチのスイッチングパターンの一例を図６（ａ）に示す   The switches sw0, sw1, sw2,..., Sw7 are on / off controlled by the control circuit 200. An example of the switching pattern of these switches for the phase shift method is shown in FIG.

この例のスイッチングパターンは、４つの時相Ｉ，ＩＩ，ＩＩＩ，ＩＶを繰り返す。各時相のパターンは、素子アレイの２ライン（すなわち２素子）ごとに交互にオン・オフされる周期パターンであり、その周期パターンが１時相ごとに１ライン、すなわちπ／２ずつ一方に移動する。例えば、時相Ｉではスイッチｓｗ０及びｓｗ１とｓｗ４及びｓｗ５とがオンされ残りのスイッチがオフされ、時相ＩＩではスイッチｓｗ１及びｓｗ２とｓｗ５及びｓｗ６とがオンされ残りのスイッチがオフされる。   The switching pattern of this example repeats four time phases I, II, III, and IV. Each time phase pattern is a periodic pattern that is alternately turned on / off every two lines (ie, two elements) of the element array, and the periodic pattern is one line per time phase, ie, π / 2. Moving. For example, in time phase I, switches sw0 and sw1, and sw4 and sw5 are turned on and the remaining switches are turned off. In time phase II, switches sw1 and sw2, sw5 and sw6 are turned on and the remaining switches are turned off.

図６（ｂ）には各時相での素子アレイの発光パターンを、（ｃ）には各時相の発光パターンに応じて平面に投影されるパターン光の投影パターンを示す。発光パターンはラインすなわち隣り合う２つの線状ＬＥＤ素子１００を単位とした画然としたオン・オフパターンであるが、それが投影されると、発光自体の広がり等により、オン・オフパターンが鈍ることにより、サインカーブに近い光の強度分布が得られる。   FIG. 6B shows a light emission pattern of the element array in each time phase, and FIG. 6C shows a projection pattern of pattern light projected on a plane according to the light emission pattern in each time phase. The light emission pattern is a distinct on / off pattern in units of lines, that is, two adjacent linear LED elements 100, but when it is projected, the on / off pattern becomes dull due to the spread of the light emission itself. Thus, a light intensity distribution close to a sine curve can be obtained.

位相シフト法では、典型的には、サイン状の強度分布を持つ縞パターン光を対象に投影し、そのパターン光の位相をπ／２ずつずらしながらカメラで撮影し、それら各時相での撮影画像から対象の奥行き情報を得る。図５及び図６に例示した装置は、そのような位相シフト法に利用可能なパターン光を投影することができる。   In the phase shift method, a fringe pattern light having a sine-like intensity distribution is typically projected onto a target, and the pattern light is photographed with a camera while shifting the phase by π / 2, and photographed at each time phase. The depth information of the object is obtained from the image. The apparatus illustrated in FIGS. 5 and 6 can project pattern light that can be used in such a phase shift method.

なお、位相シフト法自体は周知の手法であるので説明は省略する。必要であれば、特開平０６−１０９４３８号公報、三高良介・濱田長生著「位相シフト法による高速高精度３次元計測技術」松下電工技報（Aug.2002）pp.10-15，２００２年８月(http://www.mew.co.jp/tecrepo/78j/pdfs/78_02.pdf)等を参照されたい。   Since the phase shift method itself is a well-known method, description thereof is omitted. If necessary, Japanese Patent Application Laid-Open No. 06-109438, Ryosuke Mitaka and Nagao Hamada “High-speed and high-accuracy three-dimensional measurement technology using the phase shift method” Matsushita Electric Works Technical Report (Aug. 2002) pp.10-15, 2002 Please refer to August (http://www.mew.co.jp/tecrepo/78j/pdfs/78_02.pdf).

以上、この発明の実施形態を説明した。この実施形態のパターン光発生装置は半導体プロセスにより形成される線状ＬＥＤ素子１００のアレイなので、点光源のＬＥＤ素子をマトリックス状に配列した光源よりも製造や配線の煩雑さが少ない。また、個別の点光源のＬＥＤ素子を多数用いる場合、個々の素子の特性のばらつきにより発光強度分布がラインごとに不規則になるが、本実施形態では半導体プロセスにより形成される線状ＬＥＤ素子１００を用いるのでそのようなラインごとのばらつきはすくない。また、ｎ側電極１３０をすべての線状ＬＥＤ素子１００で共用しているので、ｎ側電極１３０についての配線その他の構成が簡素化できる。   The embodiment of the present invention has been described above. Since the pattern light generator of this embodiment is an array of linear LED elements 100 formed by a semiconductor process, the manufacturing and wiring are less complicated than a light source in which LED elements of point light sources are arranged in a matrix. When a large number of LED elements of individual point light sources are used, the emission intensity distribution becomes irregular for each line due to variations in the characteristics of the individual elements. In this embodiment, the linear LED element 100 formed by a semiconductor process is used. Therefore, such line-by-line variations are not great. In addition, since the n-side electrode 130 is shared by all the linear LED elements 100, wiring and other configurations for the n-side electrode 130 can be simplified.

また、この実施形態では、比較的簡単な配線と制御により、位相シフト法のための発光パターンを生成することができる。   In this embodiment, a light emission pattern for the phase shift method can be generated by relatively simple wiring and control.

なお、上記実施形態のＬＥＤチップ１０の適用先は位相シフト法に限られるわけではない。配線とスイッチングロジックが多少複雑にはなるが、空間コード化法のための二進コードパターンやグレイコードパターンも生成可能であることは、当業者ならば容易に理解できるであろう。   In addition, the application destination of the LED chip 10 of the said embodiment is not necessarily restricted to a phase shift method. Those skilled in the art will readily understand that although the wiring and switching logic are somewhat complicated, binary code patterns and gray code patterns for spatial coding methods can also be generated.

実施形態のＬＥＤチップの概略構成を模式的に示す斜視図である。It is a perspective view which shows typically schematic structure of the LED chip of embodiment. 実施形態のＬＥＤチップの部分的な上面図である。It is a partial top view of the LED chip of embodiment. 実施形態のＬＥＤチップの部分的な断面図である。It is a fragmentary sectional view of the LED chip of an embodiment. 実施形態のＬＥＤチップの製造工程の一例を示す図である。It is a figure which shows an example of the manufacturing process of the LED chip of embodiment. 実施形態のＬＥＤチップの発光パターン制御のための構成の一例を示す図である。It is a figure which shows an example of the structure for the light emission pattern control of the LED chip of embodiment. スイッチのオン・オフ制御パターン、これに対応する素子アレイの発光パターン、及び素子アレイから発せられた光の投影パターンを説明するための図である。It is a figure for demonstrating the on / off control pattern of a switch, the light emission pattern of the element array corresponding to this, and the projection pattern of the light emitted from the element array.

符号の説明Explanation of symbols

１０ ＬＥＤチップ、１００ 線状ＬＥＤ素子、１０２ ｐ型半導体層、１０４ 発光層、１０６ ｎ型半導体層、１０８ ｐ側電極、１１０ 素子分離溝、１２０ 基板、１３０ ｎ側電極。   10 LED chip, 100 linear LED element, 102 p-type semiconductor layer, 104 light emitting layer, 106 n-type semiconductor layer, 108 p-side electrode, 110 element isolation groove, 120 substrate, 130 n-side electrode.

Claims (3)

三次元形状計測用のパターン光を発光するパターン光発光装置であって、
線状の発光層を持つ線状発光ダイオードを、当該線状発光ダイオードの延伸方向に対して直交する方向に、複数個配列してなる発光アレイ部と、
前記発光アレイ部の前記各線状発光ダイオードを所定のスイッチングパターンに従ってスイッチングするスイッチング回路と、
を備えるパターン光発光装置。 A pattern light emitting device for emitting pattern light for three-dimensional shape measurement,
A light-emitting array portion formed by arranging a plurality of linear light-emitting diodes having a linear light-emitting layer in a direction orthogonal to the extending direction of the linear light-emitting diodes;
A switching circuit that switches the linear light emitting diodes of the light emitting array unit according to a predetermined switching pattern;
A pattern light emitting device comprising: 前記各線状発光ダイオードの表面に、それぞれ、当該線状ダイオードの延伸方向の略全長にわたって連続した電極が形成されていることを特徴とする請求項１記載のパターン光発光装置。   2. The pattern light emitting device according to claim 1, wherein an electrode is formed on the surface of each linear light emitting diode so as to be continuous over substantially the entire length in the extending direction of the linear diode. 前記複数の線状発光ダイオードは共通の基板の一方の面上に形成されており、当該基板の他方の面には前記複数の線状発光ダイオードに共通の電極が形成されていることを特徴とする請求項２記載のパターン光発光装置。   The plurality of linear light emitting diodes are formed on one surface of a common substrate, and an electrode common to the plurality of linear light emitting diodes is formed on the other surface of the substrate. The patterned light-emitting device according to claim 2.
JP2008313598A 2008-12-09 2008-12-09 Pattern light emitting device Expired - Fee Related JP5438308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008313598A JP5438308B2 (en) 2008-12-09 2008-12-09 Pattern light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008313598A JP5438308B2 (en) 2008-12-09 2008-12-09 Pattern light emitting device

Publications (2)

Publication Number Publication Date
JP2010139268A true JP2010139268A (en) 2010-06-24
JP5438308B2 JP5438308B2 (en) 2014-03-12

Family

ID=42349534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008313598A Expired - Fee Related JP5438308B2 (en) 2008-12-09 2008-12-09 Pattern light emitting device

Country Status (1)

Country Link
JP (1) JP5438308B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101653923B1 (en) * 2015-04-27 2016-09-02 한국광기술원 Luminous device with series of striped lighting sources for 3 dimensional display

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000292131A (en) * 1999-04-07 2000-10-20 Minolta Co Ltd Three-dimensional information input camera
JP2001063139A (en) * 1999-08-30 2001-03-13 Kyocera Corp Imaging apparatus
JP2001308375A (en) * 2000-04-24 2001-11-02 Nippon Sheet Glass Co Ltd Light-emitting element and light-emitting element array
JP2002195812A (en) * 2000-10-20 2002-07-10 Matsushita Electric Ind Co Ltd Range finder device, three-dimensional measuring method and light source device
JP2006029829A (en) * 2004-07-12 2006-02-02 Shinshu Univ Three-dimensional measuring instrument
JP2007012853A (en) * 2005-06-30 2007-01-18 Fujifilm Holdings Corp Image reader
JP2007288139A (en) * 2006-03-24 2007-11-01 Sumitomo Chemical Co Ltd Monolithic light emitting device and method for operation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000292131A (en) * 1999-04-07 2000-10-20 Minolta Co Ltd Three-dimensional information input camera
JP2001063139A (en) * 1999-08-30 2001-03-13 Kyocera Corp Imaging apparatus
JP2001308375A (en) * 2000-04-24 2001-11-02 Nippon Sheet Glass Co Ltd Light-emitting element and light-emitting element array
JP2002195812A (en) * 2000-10-20 2002-07-10 Matsushita Electric Ind Co Ltd Range finder device, three-dimensional measuring method and light source device
JP2006029829A (en) * 2004-07-12 2006-02-02 Shinshu Univ Three-dimensional measuring instrument
JP2007012853A (en) * 2005-06-30 2007-01-18 Fujifilm Holdings Corp Image reader
JP2007288139A (en) * 2006-03-24 2007-11-01 Sumitomo Chemical Co Ltd Monolithic light emitting device and method for operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101653923B1 (en) * 2015-04-27 2016-09-02 한국광기술원 Luminous device with series of striped lighting sources for 3 dimensional display

Also Published As

Publication number Publication date
JP5438308B2 (en) 2014-03-12

Similar Documents

Publication Publication Date Title
KR102538882B1 (en) Display device
CN107561837B (en) Overlapping pattern projector
CN112531463B (en) Combining light-emitting elements of different divergences on the same substrate
JP6896863B2 (en) Surface mountable semiconductor lasers, devices equipped with such semiconductor lasers and methods of operation thereof
JP4871978B2 (en) Semiconductor device and optical print head
JP2012513667A (en) Optoelectronic projector
KR102385059B1 (en) Light-emitting module and display device comprising same
US20120104284A1 (en) Patterning device for generating a pattern in and/or on a layer
JP2009238963A (en) Light-emitting diode chip and manufacturing method thereof
JPWO2018181204A1 (en) Semiconductor light emitting module and control method thereof
JP6664037B1 (en) Method and apparatus for manufacturing flexible light emitting device
US6262540B1 (en) Semiconductor device and image formation apparatus using same
US8692264B2 (en) Light-emitting element, method of manufacturing light-emitting element, self-scanning light-emitting element array, optical writing head, and image forming apparatus
JP2784052B2 (en) Self-scanning light emitting element array and driving method thereof
JP2784025B2 (en) Optical scanning device
JP5438308B2 (en) Pattern light emitting device
JP6674593B1 (en) Method and apparatus for manufacturing flexible light emitting device
KR102191802B1 (en) Method for optical transmission of a structure into a recording medium
US10014445B2 (en) Light-emitting device and manufacturing method thereof
JP2004319915A (en) Semiconductor laser device and method for manufacturing the semiconductor laser device
JP2006156901A (en) Semiconductor light emitting device
JP2016152244A (en) Light emitting element, light emitting element array, optical writing head, and image forming apparatus
US20220337028A1 (en) Light-emitting device and measurement device
KR20150088184A (en) Distributed feedback laser diode and distributed feedback laser diode fabrication method
JP2009238964A (en) Light-emitting diode chip and manufacturing method thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121204

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131213

R150 Certificate of patent or registration of utility model

Ref document number: 5438308

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees