JP2010088065A - Piezoelectric vibrator and piezoelectric oscillator - Google Patents

Piezoelectric vibrator and piezoelectric oscillator Download PDF

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JP2010088065A
JP2010088065A JP2008257861A JP2008257861A JP2010088065A JP 2010088065 A JP2010088065 A JP 2010088065A JP 2008257861 A JP2008257861 A JP 2008257861A JP 2008257861 A JP2008257861 A JP 2008257861A JP 2010088065 A JP2010088065 A JP 2010088065A
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vibration element
piezoelectric vibration
piezoelectric
mounting member
element mounting
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JP5220539B2 (en
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Hirokazu Kobayashi
宏和 小林
Kenji Oba
健司 大場
Kazuya Takahashi
和也 高橋
Yoshinori Nasu
義紀 那須
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric vibrator and a piezoelectric oscillator that are completely sealed and prevent stress from remaining. <P>SOLUTION: The piezoelectric vibrator includes a piezoelectric vibrating element, a piezoelectric vibrating element mounting member having a surface roughness such that a mean surface roughness is ≤1 nm and made of a brittle material, and a cover member having a recessed portion and a surface roughness such that a mean surface roughness is ≤1 nm and made of a brittle material, the piezoelectric vibrating element mounting member mounted with the piezoelectric vibrating element and the cover member being joined together directly at room temperature. Metal films for joining are provided on respective junction surfaces of the piezoelectric vibrating element mounting member and the cover member. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、電子機器に用いられる圧電振動子及び圧電発振器に関する。   The present invention relates to a piezoelectric vibrator and a piezoelectric oscillator used in electronic equipment.

従来から、電子機器には電子部品を搭載した電子基板が用いられている。この電子基板には、金属膜からなる導通パターンが形成されており、この導通パターンに半田等でコンデンサ等のチップ部品を接合することで電子基板に電子部品を搭載している。
また、電子部品は、チップ部品の他に、凹部を有する容器に各種素子を搭載して凹部を封止した構造の圧電振動子や圧電発振器といった電子部品が含まれる。 Conventionally, electronic boards on which electronic components are mounted are used in electronic devices. A conductive pattern made of a metal film is formed on the electronic substrate, and an electronic component is mounted on the electronic substrate by bonding a chip component such as a capacitor to the conductive pattern with solder or the like.
In addition to the chip component, the electronic component includes an electronic component such as a piezoelectric vibrator or a piezoelectric oscillator having a structure in which various elements are mounted on a container having a recess and the recess is sealed.

ここで、圧電振動子に用いられる圧電振動素子搭載部材と蓋部材について説明する。
例えば、圧電振動素子搭載部材は、平板状に形成されており、後述する蓋部材と接合する面に金属膜が設けられている。また、この金属膜よりも内側に圧電振動素子を搭載するための搭載パッドが設けられている。また、この金属膜が設けられる主面とは反対側の主面にマザーボードなどの配線基板に実装するための外部端子が設けられている。この外部端子は、内部配線パターンを介して搭載パッドと接続している。このような圧電振動素子搭載部材は、複数が連なったウェハの状態で、金属膜、搭載パッド、外部端子が設けられる。
また、蓋部材は、内部に圧電振動素子を封止することができる程度の大きさを有する凹部が設けられており、圧電振動素子搭載部材と接合する面に封止材からなる金属膜が設けられている。このような蓋部材は、複数が連なったウェハの状態で、金属膜が設けられる。 Here, the piezoelectric vibration element mounting member and the lid member used for the piezoelectric vibrator will be described.
For example, the piezoelectric vibration element mounting member is formed in a flat plate shape, and a metal film is provided on a surface to be joined to a lid member described later. In addition, a mounting pad for mounting the piezoelectric vibration element is provided inside the metal film. In addition, an external terminal for mounting on a wiring board such as a mother board is provided on the main surface opposite to the main surface on which the metal film is provided. This external terminal is connected to the mounting pad via an internal wiring pattern. Such a piezoelectric vibration element mounting member is provided with a metal film, a mounting pad, and an external terminal in the state of a plurality of wafers.
In addition, the lid member is provided with a recess having a size capable of sealing the piezoelectric vibration element inside, and a metal film made of a sealing material is provided on a surface to be joined to the piezoelectric vibration element mounting member. It has been. Such a lid member is provided with a metal film in the state of a wafer in which a plurality are connected.

ここで、圧電振動子は、以下の工程を経て製造される。
まず、圧電振動素子搭載部材に設けられた搭載パッドに圧電振動素子を導電性接着剤を介して搭載し、この状態で蓋部材の凹部内に圧電振動素子が入るように蓋部材を圧電振動素子搭載部材に重ねる。
圧電振動素子搭載部材と蓋部材とが重なった状態で、例えば、３００℃〜３５０℃で加熱して、圧電振動素子搭載部材と蓋部材とを接合して１つのウェハに複数の圧電振動子が設けられた状態にする。
その後、各圧電振動子の境目で切断して個片化された圧電振動子とする（例えば、特許文献１参照）。 Here, the piezoelectric vibrator is manufactured through the following steps.
First, the piezoelectric vibration element is mounted on a mounting pad provided on the piezoelectric vibration element mounting member via a conductive adhesive, and in this state, the lid member is placed in the recess of the lid member so that the piezoelectric vibration element enters the recess. Overlay the mounting member.
In a state where the piezoelectric vibration element mounting member and the lid member overlap, for example, heating is performed at 300 ° C. to 350 ° C., and the piezoelectric vibration element mounting member and the lid member are joined to each other so that a plurality of piezoelectric vibrators are formed on one wafer. Keep it in the provided state.
Thereafter, the piezoelectric vibrator is cut into individual piezoelectric vibrators and separated into individual pieces (see, for example, Patent Document 1).

また、同様な構造の圧電振動子において、接合用の金属膜を用いずに、ウェハの状態の圧電振動素子搭載部材と蓋部材とを接合した圧電振動子が提案されている（例えば、特許文献２参照）。
圧電振動素子搭載部材と蓋部材との接合は、直接接合により行われている。この接合を行うときの温度は、２００℃〜５００℃とされている。
このように、ウェハの状態で接合を行い、各圧電振動子となっている部分で切断して、個片化された圧電振動子としている。 In addition, a piezoelectric vibrator having a similar structure in which a piezoelectric vibration element mounting member in a wafer state and a lid member are joined without using a bonding metal film has been proposed (for example, Patent Documents). 2).
The piezoelectric vibration element mounting member and the lid member are joined by direct joining. The temperature at which this bonding is performed is set to 200 ° C to 500 ° C.
In this way, bonding is performed in the state of a wafer, and the piezoelectric vibrators are cut into pieces and cut into individual piezoelectric vibrators.

特開２００６−２７９８７２号公報JP 2006-279872 A 特開２００６−３３９８９６号公報JP 2006-339896 A

しかしながら、圧電振動素子搭載部材と蓋部材との接合は加熱が必要となる。これにより、加熱による熱膨張とその後の冷却による収縮で圧電振動素子搭載部材と蓋部材とに応力が残留することがある。この応力により、接合部分が剥がれる恐れがある。
また、接合されるために接合面の幅を、例えば、０．１５ｍｍ程度に広く設ける必要があるが、電子部品の小型化により、接合幅が従来よりも狭くなってきている。そのため、完全な封止が行えない恐れがある。 However, the joining of the piezoelectric vibration element mounting member and the lid member requires heating. Thereby, stress may remain in the piezoelectric vibration element mounting member and the lid member due to thermal expansion due to heating and subsequent shrinkage due to cooling. Due to this stress, there is a possibility that the joint portion is peeled off.
Further, in order to be bonded, the width of the bonding surface needs to be provided as wide as, for example, about 0.15 mm, but the bonding width has become narrower than before due to downsizing of electronic components. Therefore, there is a possibility that complete sealing cannot be performed.

そこで、本発明では、前記した問題を解決し、封止が完全になされ、応力の残留を防ぐ圧電振動子及び圧電発振器を提供することを課題とする。   Therefore, an object of the present invention is to provide a piezoelectric vibrator and a piezoelectric oscillator that solve the above-described problems and that are completely sealed and prevent residual stress.

前記課題を解決するため、本発明は、圧電振動子であって、圧電振動素子と、平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる圧電振動素子搭載部材と、凹部を有し平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる蓋部材と、を備え、 前記圧電振動素子を搭載した圧電振動素子搭載部材と前記蓋部材とが常温で直接接合されて構成されていることを特徴とする。   In order to solve the above problems, the present invention provides a piezoelectric vibrator, a piezoelectric vibration element, a piezoelectric vibration element mounting member made of a brittle material with a surface roughness with an average surface roughness Ra of 1 nm or less, and a recess. And a lid member made of a brittle material with an average surface roughness Ra of 1 nm or less, and the piezoelectric vibration element mounting member on which the piezoelectric vibration element is mounted and the lid member are directly bonded at room temperature. It is characterized by being configured.

また、本発明は、圧電振動子であって、圧電振動素子と、凹部を有し平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる圧電振動素子搭載部材と、平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる蓋部材と、を備え、前記圧電振動素子を搭載した圧電振動素子搭載部材と前記蓋部材とが常温で直接接合されて構成されていることを特徴とする。   The present invention also relates to a piezoelectric vibrator, a piezoelectric vibration element, a piezoelectric vibration element mounting member made of a brittle material having a concave portion and an average surface roughness Ra of 1 nm or less, and an average surface roughness. A lid member made of a brittle material with a surface roughness of Ra of 1 nm or less, and the piezoelectric vibration element mounting member on which the piezoelectric vibration element is mounted and the lid member are directly bonded at room temperature. It is characterized by that.

また、本発明は、前記圧電振動素子搭載部材に２つの凹部が設けられていても良い。
また、本発明は、前記圧電振動素子搭載部材と前記蓋部材とのそれぞれの接合面に接合用金属膜が設けられていても良い。 In the present invention, two recesses may be provided in the piezoelectric vibration element mounting member.
In the present invention, a bonding metal film may be provided on each bonding surface of the piezoelectric vibration element mounting member and the lid member.

また、本発明は、圧電発振器であって、請求項１乃至請求項４のいずれか１項に記載の圧電振動子に、少なくとも発振回路を備えた集積回路素子が搭載されて構成されていることを特徴とする。   The present invention is also a piezoelectric oscillator, wherein the piezoelectric vibrator according to any one of claims 1 to 4 is mounted with an integrated circuit element including at least an oscillation circuit. It is characterized by.

このような圧電振動子によれば、接合面の平均表面粗さＲａが１ｎｍとなるため、常温で直接接合ができ、また、接合面の幅が従来より小さくても封止状態を維持することができる。
また、圧電振動素子搭載部材に２つの凹部を設けたので、圧電振動素子のための空間として用いることができ、その他に、他の電子部品を搭載可能に構成することができる。
また、接合面に接合用金属膜を設けたので、圧電振動素子搭載部材と蓋部材との接合強度を向上させることができる。 According to such a piezoelectric vibrator, since the average surface roughness Ra of the bonded surface is 1 nm, direct bonding can be performed at room temperature, and the sealed state can be maintained even if the width of the bonded surface is smaller than the conventional one. Can do.
Moreover, since the two concave portions are provided in the piezoelectric vibration element mounting member, it can be used as a space for the piezoelectric vibration element, and in addition, other electronic components can be mounted.
In addition, since the bonding metal film is provided on the bonding surface, the bonding strength between the piezoelectric vibration element mounting member and the lid member can be improved.

また、このような圧電発振器によれば、圧電振動素子を封止する部分からの気密漏れを防ぐことができるので、歩留まりを向上させることができる。   In addition, according to such a piezoelectric oscillator, it is possible to prevent airtight leakage from a portion that seals the piezoelectric vibration element, so that the yield can be improved.

次に、本発明を実施するための最良の形態（以下、「実施形態」という。）について、適宜図面を参照しながら詳細に説明する。なお、各構成要素について、状態をわかりやすくするために、誇張して図示している。   Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. Note that each component is exaggerated for easy understanding of the state.

（第一の実施形態）
図１（ａ）は、ウェハに外部端子と搭載パッドを設けた状態の一例を示す概念図であり、（ｂ）は圧電振動素子を搭載した状態の一例を示す概念図であり、（ｃ）は蓋部材を接合する前の状態を示す概念図であり、（ｄ）は、蓋部材を接合した状態を示す概念図である。図２は、本発明の第一の実施形態に係る圧電振動子の一例を示す概念図である。
本発明の第一の実施形態に係る圧電振動子１０１は、圧電振動素子搭載部材１０Ａ、圧電振動素子２０、蓋部材３０Ａとから構成されている。 (First embodiment)
FIG. 1A is a conceptual diagram illustrating an example of a state in which external terminals and mounting pads are provided on a wafer. FIG. 1B is a conceptual diagram illustrating an example of a state in which a piezoelectric vibration element is mounted. Is a conceptual diagram showing a state before the lid member is joined, and (d) is a conceptual diagram showing a state in which the lid member is joined. FIG. 2 is a conceptual diagram showing an example of the piezoelectric vibrator according to the first embodiment of the present invention.
The piezoelectric vibrator 101 according to the first embodiment of the present invention includes a piezoelectric vibration element mounting member 10A, a piezoelectric vibration element 20, and a lid member 30A.

図１（ｂ）に示すように、圧電振動素子２０は、例えば、圧電片である平面視矩形形状の水晶片２１の両主面に励振電極２２が設けられており、それぞれの主面に設けられた励振電極２２からこの水晶片２１の端部側に伸びる引回しパターン２３が形成されて構成されている（図１参照）。
この圧電振動素子２０は、励振電極２２と接続している引回しパターン２３と圧電振動素子搭載部材１０Ａに設けられた搭載パッドＰに導電性接着材Ｄにより接合される。
これにより、圧電振動素子２０は圧電振動素子搭載部材１０Ａに搭載される。 As shown in FIG. 1B, the piezoelectric vibration element 20 is provided with excitation electrodes 22 on both main surfaces of a crystal piece 21 having a rectangular shape in plan view, which is a piezoelectric piece, for example. A lead pattern 23 extending from the excited electrode 22 to the end side of the crystal piece 21 is formed (see FIG. 1).
The piezoelectric vibration element 20 is bonded to the lead pattern 23 connected to the excitation electrode 22 and the mounting pad P provided on the piezoelectric vibration element mounting member 10A by the conductive adhesive D.
Thereby, the piezoelectric vibration element 20 is mounted on the piezoelectric vibration element mounting member 10A.

圧電振動素子搭載部材１０Ａは、ガラス又は水晶の脆性材料が用いられ平均表面粗さＲａが１ｎｍ以下となる表面粗さで形成されている。この圧電振動素子搭載部材１０Ａは、後述する蓋部材３０Ａとの接合面においても、平均表面粗さＲａが１ｎｍ以下となる表面粗さとなっている。
接合面の平均表面粗さＲａが１ｎｍ以下となることで、常温での直接接合が容易となる。しかし、接合面の平均表面粗さＲａが１ｎｍよりも大きい場合、常温での直接接合が困難と成り、加熱しながらの接合となるため、圧電振動素子搭載部材１０Ａが歪む恐れがある。 The piezoelectric vibration element mounting member 10 </ b> A is made of a brittle material such as glass or quartz, and has a surface roughness with an average surface roughness Ra of 1 nm or less. The piezoelectric vibration element mounting member 10A has a surface roughness with an average surface roughness Ra of 1 nm or less even on a joint surface with a lid member 30A described later.
When the average surface roughness Ra of the bonding surface is 1 nm or less, direct bonding at room temperature is facilitated. However, when the average surface roughness Ra of the bonding surface is larger than 1 nm, direct bonding at room temperature becomes difficult and bonding is performed while heating, so that the piezoelectric vibration element mounting member 10A may be distorted.

また、接合面は、圧電振動素子搭載部材１０Ａの外周縁に沿って搭載パッドＰ（図１（ａ）参照）が設けられている主面に設けられており、その幅は、例えば、２０μｍとなっている。
この接合面は、後述する蓋部材３０Ａと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化される。
また、図１（ａ）に示すように、圧電振動素子搭載部材１０Ａには、接合面よりも内側に圧電振動素子２０を搭載するための搭載パッドＰが設けられ、その搭載パッドＰが設けられる主面とは反対側の主面に外部端子Ｇが設けられている。
これら搭載パッドＰと外部端子Ｇとは、予め設けられているスルーホールを介して接続されている。 Further, the bonding surface is provided on the main surface on which the mounting pad P (see FIG. 1A) is provided along the outer peripheral edge of the piezoelectric vibration element mounting member 10A, and the width thereof is, for example, 20 μm. It has become.
This bonding surface is activated by argon plasma or oxygen plasma before being overlapped with a lid member 30A described later.
Further, as shown in FIG. 1A, the piezoelectric vibration element mounting member 10A is provided with a mounting pad P for mounting the piezoelectric vibration element 20 on the inner side of the bonding surface, and the mounting pad P is provided. An external terminal G is provided on the main surface opposite to the main surface.
The mounting pad P and the external terminal G are connected through a through hole provided in advance.

蓋部材３０Ａは、ガラス又は水晶の脆性材料が用いられ平均表面粗さＲａが１ｎｍ以下となる表面粗さで形成されている。この蓋部材３０Ａは、圧電振動素子搭載部材１０Ａとの接合面においても、平均表面粗さＲａが１ｎｍ以下となる表面粗さとなっている。
この接合面は、圧電振動素子搭載部材１０Ａと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化される。
接合面の平均表面粗さＲａが１ｎｍ以下となることで、常温での直接接合が容易となる。しかし、接合面の平均表面粗さＲａが１ｎｍよりも大きい場合、常温での直接接合が困難と成り、加熱しながらの接合となるため、蓋部材３０Ａが歪む恐れがある。
また、図１（ｃ）に示すように、蓋部材３０Ａには、凹部３１が形成されている。この凹部３１は、圧電振動素子搭載部材１０Ａに搭載されている圧電振動素子２０を覆う大きさで形成されている。
接合面は、蓋部材３０Ａの外周縁から凹部３１までの間であって、その幅は、例えば、２０μｍで形成されている。 The lid member 30A is made of a brittle material such as glass or quartz and has a surface roughness with an average surface roughness Ra of 1 nm or less. The lid member 30A has a surface roughness with an average surface roughness Ra of 1 nm or less even on the joint surface with the piezoelectric vibration element mounting member 10A.
This bonding surface is activated by argon plasma or oxygen plasma before being overlapped with the piezoelectric vibration element mounting member 10A.
When the average surface roughness Ra of the bonding surface is 1 nm or less, direct bonding at room temperature is facilitated. However, when the average surface roughness Ra of the bonding surface is larger than 1 nm, direct bonding at room temperature becomes difficult and bonding is performed while heating, so that the lid member 30A may be distorted.
Moreover, as shown in FIG.1 (c), the recessed part 31 is formed in the cover member 30A. The recess 31 is formed to have a size that covers the piezoelectric vibration element 20 mounted on the piezoelectric vibration element mounting member 10A.
The joining surface is between the outer peripheral edge of the lid member 30A and the recess 31 and has a width of, for example, 20 μm.

圧電振動素子２０が搭載された圧電振動素子搭載部材１０Ａと蓋部材３０Ａとは、接合面を重ね合わせた状態で、常温にて真空雰囲気中で所定の圧力が加えられて直接接合される。ここで、常温とは、例えば２０±１５℃の範囲とする。
これにより、圧電振動素子搭載部材１０Ａと蓋部材３０Ａとが直接接合されて圧電振動子１０１となる。 The piezoelectric vibration element mounting member 10A on which the piezoelectric vibration element 20 is mounted and the lid member 30A are directly bonded by applying a predetermined pressure in a vacuum atmosphere at room temperature in a state where the bonding surfaces are overlapped. Here, normal temperature is set to a range of 20 ± 15 ° C., for example.
As a result, the piezoelectric vibration element mounting member 10A and the lid member 30A are directly joined to form the piezoelectric vibrator 101.

このように、本発明の第一の実施形態に係る圧電振動子１０１を構成したので、直接接合を容易に行うことができる構造とすることができる。また、接合面の平均表面粗さＲａが１ｎｍとなるため、常温で直接接合ができ、また、接合面の幅が従来より小さくても封止状態を維持することができる。   As described above, since the piezoelectric vibrator 101 according to the first embodiment of the present invention is configured, a structure capable of easily performing direct bonding can be obtained. In addition, since the average surface roughness Ra of the bonding surface is 1 nm, direct bonding can be performed at room temperature, and the sealed state can be maintained even if the width of the bonding surface is smaller than the conventional one.

次に、本発明の第一の実施形態に係る圧電振動子１０１の製造方法について説明する。
図１（ａ）に示すように、複数の圧電振動素子搭載部材１０Ａは、１枚のウェハに設けられた状態となっている。つまり、このウェハは、複数の圧電振動素子搭載部材１０Ａとする部分が設けられている。
このウェハを平均表面粗さＲａが１ｎｍ以下となる表面粗さとなるまで研磨する。なお、平均表面粗さＲａは、１ｎｍ以下であればよい。また、接合面となる主面の平均表面粗さＲａが１ｎｍ以下となればよいが、両面の平均表面粗さＲａを１ｎｍ以下としても良い。 Next, a method for manufacturing the piezoelectric vibrator 101 according to the first embodiment of the present invention will be described.
As shown in FIG. 1A, the plurality of piezoelectric vibration element mounting members 10A are provided on a single wafer. That is, this wafer is provided with a portion to be a plurality of piezoelectric vibration element mounting members 10A.
The wafer is polished until the average surface roughness Ra is 1 nm or less. The average surface roughness Ra may be 1 nm or less. Moreover, the average surface roughness Ra of the main surface to be the bonding surface may be 1 nm or less, but the average surface roughness Ra of both surfaces may be 1 nm or less.

ウェハの平均表面粗さＲａが１ｎｍ以下となる表面粗さとなったら、スルーホールを所定のレーザー、サンドブラスト、エッチングなどを用いて形成する。
次に、スルーホールをスパッタリング、電解めっき、無電解めっきのいずれかにより埋めた後、搭載パッドＰと外部端子Ｇを形成する。
図１（ｂ）に示すように、この状態で、導電性接着剤Ｄを用いて圧電振動素子２０を搭載パッドＰに搭載する。
導電性接着剤Ｄが硬化した後に圧電振動素子２０の励振電極２２の一部を除去又は付加して周波数を調整する。 When the average surface roughness Ra of the wafer is 1 nm or less, a through hole is formed using a predetermined laser, sand blasting, etching or the like.
Next, after the through hole is filled with any one of sputtering, electrolytic plating, and electroless plating, the mounting pad P and the external terminal G are formed.
As shown in FIG. 1B, in this state, the piezoelectric vibration element 20 is mounted on the mounting pad P using the conductive adhesive D.
After the conductive adhesive D is cured, a part of the excitation electrode 22 of the piezoelectric vibration element 20 is removed or added to adjust the frequency.

これら工程と同時又は後に、複数の蓋部材３０Ａが設けられるウェハを研磨する。
このウェハの研磨も、複数の圧電振動素子搭載部材１０Ａが設けられるウェハと同様に、平均表面粗さＲａが１ｎｍ以下となる表面粗さとなるまで研磨する。なお、平均表面粗さＲａは、１ｎｍ以下であればよい。また、接合面となる主面の平均表面粗さＲａが１ｎｍ以下となればよいが、両面の平均表面粗さＲａを１ｎｍ以下としても良い。
この接合面となる主面は、凹部３１が設けられる側の主面である。
ウェハの平均表面粗さＲａが１ｎｍ以下となる表面粗さとなったら、凹部３１をサンドブラスト、エッチングなどを用いて形成する。 At the same time or after these steps, the wafer provided with the plurality of lid members 30A is polished.
The wafer is also polished until the average surface roughness Ra becomes 1 nm or less, as in the wafer provided with the plurality of piezoelectric vibration element mounting members 10A. The average surface roughness Ra may be 1 nm or less. Moreover, the average surface roughness Ra of the main surface to be the bonding surface may be 1 nm or less, but the average surface roughness Ra of both surfaces may be 1 nm or less.
The main surface serving as the bonding surface is the main surface on the side where the recess 31 is provided.
When the average surface roughness Ra of the wafer is 1 nm or less, the recess 31 is formed using sand blasting, etching, or the like.

図１（ｃ）及び（ｄ）に示すように、圧電振動素子２０を搭載する。
その後、圧電振動素子搭載部材１０Ａの接合面を、蓋部材３０Ａと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化する。
また、蓋部材３０Ａの接合面を、圧電振動素子搭載部材１０Ａと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化する。
この状態で、複数の圧電振動素子搭載部材１０Ａが設けられるウェハと、凹部３１が設けられ、複数の蓋部材３０Ａが設けられるウェハとを重ね合わせる。
このとき、複数の蓋部材３０Ａが設けられるウェハに設けられた凹部３１内に圧電振動素子２０が入るように重ね合わせる。
この状態で、真空度が５×１０−５Ｐａ以下となる真空雰囲気中で、常温にて所定の圧力を加えてウェハ同士を直接接合する。 As shown in FIGS. 1C and 1D, the piezoelectric vibration element 20 is mounted.
Thereafter, the surface of the bonding surface of the piezoelectric vibration element mounting member 10A is activated with argon plasma or oxygen plasma before being overlapped with the lid member 30A.
Further, the surface of the joining surface of the lid member 30A is activated by argon plasma or oxygen plasma before being overlapped with the piezoelectric vibration element mounting member 10A.
In this state, the wafer provided with the plurality of piezoelectric vibration element mounting members 10A and the wafer provided with the recesses 31 and provided with the plurality of lid members 30A are overlapped.
At this time, the piezoelectric vibration element 20 is superposed so as to enter the recess 31 provided in the wafer provided with the plurality of lid members 30A.
In this state, in a vacuum atmosphere in which the degree of vacuum is 5 × 10 −5 Pa or less, wafers are directly bonded to each other by applying a predetermined pressure at room temperature.

接合後、圧電振動素子搭載部材１０Ａの輪郭、又は／および蓋部材３０Ａの輪郭に沿って切断し、複数の圧電振動子１０１（図２参照）とする。   After the joining, the piezoelectric vibrator 101 is cut along the outline of the piezoelectric vibration element mounting member 10A and / or the outline of the lid member 30A to form a plurality of piezoelectric vibrators 101 (see FIG. 2).

したがって、接合に加熱する工程が不要となることから、直接接合が容易に行え、また、圧電振動素子搭載部材１０Ａ、蓋部材３０Ａの歪みもなくすことができる。   Therefore, since a heating step for bonding is not required, direct bonding can be easily performed, and distortion of the piezoelectric vibration element mounting member 10A and the lid member 30A can be eliminated.

（第二の実施形態）
次に本発明の第二の実施形態に係る圧電振動子について説明する。
図３に示すように、本発明の第二の実施形態に係る圧電振動子１０２は、凹部１１Ｂが圧電振動素子搭載部材１０Ｂに形成され、蓋部材３０Ｂが平板状に形成されている点で第一の実施形態と異なる。
この本発明の第二の実施形態に係る圧電振動子１０２は、凹部１１Ｂを有する圧電振動素子搭載部材１０Ｂ、圧電振動素子２０、平板状の蓋部材３０Ｂとから主に構成されている。 (Second embodiment)
Next, a piezoelectric vibrator according to a second embodiment of the present invention will be described.
As shown in FIG. 3, the piezoelectric vibrator 102 according to the second embodiment of the present invention is the first in that the concave portion 11B is formed in the piezoelectric vibration element mounting member 10B and the lid member 30B is formed in a flat plate shape. Different from one embodiment.
The piezoelectric vibrator 102 according to the second embodiment of the present invention is mainly configured by a piezoelectric vibration element mounting member 10B having a recess 11B, a piezoelectric vibration element 20, and a flat lid member 30B.

圧電振動素子搭載部材１０Ｂは、一方の主面に凹部１１Ｂが設けられており、その凹部１１Ｂ内部に圧電振動素子２０を搭載するための搭載パッドＰが設けられている。また、他方の主面には、マザーボードなどの配線基板に接続するための外部端子Ｇが設けられている。この外部端子Ｇは、圧電振動素子搭載部材１０Ｂに設けられたスルーホールを介して搭載パッドＰと接続している。
この圧電振動素子搭載部材１０Ｂの凹部１１Ｂが設けられる側の主面は、平均表面粗さＲａが１ｎｍ以下となる表面粗さとなっている。なお、圧電振動素子搭載部材１０Ｂの両主面の平均表面粗さＲａを１ｎｍ以下としても良い。 The piezoelectric vibration element mounting member 10B is provided with a recess 11B on one main surface, and a mounting pad P for mounting the piezoelectric vibration element 20 is provided inside the recess 11B. The other main surface is provided with an external terminal G for connection to a wiring board such as a mother board. The external terminal G is connected to the mounting pad P through a through hole provided in the piezoelectric vibration element mounting member 10B.
The main surface on the side where the concave portion 11B of the piezoelectric vibration element mounting member 10B is provided has a surface roughness with an average surface roughness Ra of 1 nm or less. The average surface roughness Ra of both main surfaces of the piezoelectric vibration element mounting member 10B may be 1 nm or less.

蓋部材３０Ｂは、平板状となっており、平面形状が圧電振動素子搭載部材１０Ｂの外周縁における平面形状と同一となっている。この蓋部材３０Ｂの圧電振動素子搭載部材１０Ｂと接合する側の主面の平均表面粗さＲａが、１ｎｍ以下となっている。なお、蓋部材３０Ｂの両主面の平均表面粗さＲａが１ｎｍ以下となる表面粗さとしても良い。   The lid member 30B has a flat plate shape, and the planar shape is the same as the planar shape at the outer peripheral edge of the piezoelectric vibration element mounting member 10B. The average surface roughness Ra of the main surface of the lid member 30B on the side to be joined to the piezoelectric vibration element mounting member 10B is 1 nm or less. The average surface roughness Ra of both main surfaces of the lid member 30B may be a surface roughness that is 1 nm or less.

このように構成される圧電振動素子１０２は、凹部１１Ｂが設けられたウェハに、それぞれの凹部１１Ｂ内に設けられた搭載パッドＰに圧電振動素子２０を搭載し、蓋部材３０Ｂとなる平板状のウェハを、表面活性化した後に重ねて、真空雰囲気中にて、常温の状態で所定の圧力を加えて直接接合を行う。その後、圧電振動素子搭載部材１０Ｂの輪郭、又は／および蓋部材３０Ｂの輪郭に沿って切断し、複数の圧電振動子１０２とする。   The piezoelectric vibration element 102 configured as described above has a flat plate-like shape that is formed by mounting the piezoelectric vibration element 20 on a mounting pad P provided in each of the recesses 11B on a wafer provided with the recesses 11B. The wafers are stacked after surface activation, and are directly bonded in a vacuum atmosphere by applying a predetermined pressure at room temperature. Thereafter, cutting is performed along the contour of the piezoelectric vibration element mounting member 10 </ b> B and / or the contour of the lid member 30 </ b> B to form a plurality of piezoelectric vibrators 102.

このように本発明の第二の実施形態に係る圧電振動子１０２を構成しても第一の実施形態と同様の効果を奏する。   Thus, even if the piezoelectric vibrator 102 according to the second embodiment of the present invention is configured, the same effects as those of the first embodiment can be obtained.

（第三の実施形態）
次に本発明の第三の実施形態に係る圧電振動子について説明する。
図４に示すように、本発明の第三の実施形態に係る圧電振動子１０３は、圧電振動素子搭載部材１０Ｃに設けられた１つめの凹部１１ＣＡ内に更に２つめの凹部１１ＣＢが設けられた構造となっている点で第二の実施形態と異なる。 (Third embodiment)
Next, a piezoelectric vibrator according to a third embodiment of the present invention will be described.
As shown in FIG. 4, in the piezoelectric vibrator 103 according to the third embodiment of the present invention, a second concave portion 11CB is further provided in the first concave portion 11CA provided in the piezoelectric vibration element mounting member 10C. It differs from the second embodiment in that it has a structure.

この圧電振動素子搭載部材１０Ｃは、２つの凹部１１ＣＡ、１１ＣＢが設けられた構造となっている。この凹部１１ＣＡ、１１ＣＢは、圧電振動素子搭載部材１０Ｃの平均表面粗さＲａが１ｎｍ以下となる表面粗さに研磨する前に形成しても良いし、研磨後に形成しても良い。
研磨する前に凹部１１ＣＡ、１１ＣＢを形成する場合は、ウェハを製造する前に、例えば、ガラス又は水晶の脆性材料を段階的にエッチングを行うことで
段差をつけて凹部１１ＣＡ、１１ＣＢを形成し、焼成することで凹部１１ＣＡ、１１ＣＢを有するウェハとしても良い。 The piezoelectric vibration element mounting member 10C has a structure in which two concave portions 11CA and 11CB are provided. The recesses 11CA and 11CB may be formed before or after polishing to a surface roughness with an average surface roughness Ra of 1 nm or less of the piezoelectric vibration element mounting member 10C.
When forming the recesses 11CA and 11CB before polishing, before manufacturing the wafer, for example, by forming a step by etching a brittle material of glass or quartz to form the recesses 11CA and 11CB, It is good also as a wafer which has recessed part 11CA and 11CB by baking.

この圧電振動素子搭載部材１０Ｃにおいて、凹部１１ＣＡ内に搭載パッドＰを設け、凹部１１ＣＡ内に位置するように、この搭載パッドＰに圧電振動素子２０を搭載する。
このように本発明の第三の実施形態に係る圧電振動子１０３を構成したので、直接接合を容易に行うことができる構造とすることができる。また、接合面の平均表面粗さＲａが１ｎｍとなるため、常温で直接接合ができ、また、接合面の幅が従来より小さくても封止状態を維持することができる。
また、凹部１１ＣＡに圧電振動素子２０を搭載する構造となるので、凹部１１ＣＢが空いた空間となるために、圧電振動素子２０の自由端部側が下がっても圧電振動素子搭載部材１０Ｃに接触することがない。これにより、圧電振動素子２０の周波数が変化する要因を除去することができる。 In the piezoelectric vibration element mounting member 10C, a mounting pad P is provided in the recess 11CA, and the piezoelectric vibration element 20 is mounted on the mounting pad P so as to be positioned in the recess 11CA.
Thus, since the piezoelectric vibrator 103 according to the third embodiment of the present invention is configured, a structure capable of easily performing direct bonding can be obtained. In addition, since the average surface roughness Ra of the bonding surface is 1 nm, direct bonding can be performed at room temperature, and the sealed state can be maintained even if the width of the bonding surface is smaller than the conventional one.
In addition, since the piezoelectric vibration element 20 is mounted in the recess 11CA, the recess 11CB becomes a vacant space, so that the piezoelectric vibration element mounting member 10C can be contacted even when the free end portion of the piezoelectric vibration element 20 is lowered. There is no. Thereby, the factor that the frequency of the piezoelectric vibration element 20 changes can be removed.

（第四の実施形態）
次に本発明の第四の実施形態に係る圧電振動子について説明する。
図５に示すように、本発明の第四の実施形態に係る圧電振動子１０４は、圧電振動素子搭載部材１０Ｄと蓋部材３０Ｄとのそれぞれの接合面に接合用金属膜１２、３２が設けられている点で第一の実施形態と異なる。 (Fourth embodiment)
Next, a piezoelectric vibrator according to a fourth embodiment of the present invention will be described.
As shown in FIG. 5, in the piezoelectric vibrator 104 according to the fourth embodiment of the present invention, the bonding metal films 12 and 32 are provided on the bonding surfaces of the piezoelectric vibration element mounting member 10D and the lid member 30D. This is different from the first embodiment.

圧電振動素子搭載部材１０Ｄは、搭載パッドＰが設けられる側の主面の平均表面粗さＲａを１ｎｍ以下となるまで研磨されており、その後、搭載パッドＰと同時又は別に接合用金属膜１２を設ける。この接合用金属膜１２は、第一の実施形態における圧電振動素子搭載部材１０Ａに設けられた接合面に設けられる。
この接合用金属膜１２は、後述する蓋部材３０Ｄと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化される。
このように、圧電振動素子搭載部材１０Ｄの平均表面粗さＲａが１ｎｍ以下となる表面粗さとなる状態で接合用金属膜１２を設けると、圧電振動素子搭載部材１０Ｄと接合用金属膜１２との密着性が良く、圧電振動素子搭載部材１０Ｄと接合用金属膜１２との境目からの気密漏れを防ぐことができる。 The piezoelectric vibration element mounting member 10D is polished until the average surface roughness Ra of the main surface on the side where the mounting pad P is provided is 1 nm or less. Thereafter, the bonding metal film 12 is formed simultaneously with or separately from the mounting pad P. Provide. The bonding metal film 12 is provided on the bonding surface provided on the piezoelectric vibration element mounting member 10A in the first embodiment.
The bonding metal film 12 is surface activated by argon plasma or oxygen plasma before being overlapped with a lid member 30D described later.
Thus, when the bonding metal film 12 is provided in a state where the average surface roughness Ra of the piezoelectric vibration element mounting member 10D is 1 nm or less, the piezoelectric vibration element mounting member 10D and the bonding metal film 12 Adhesiveness is good, and airtight leakage from the boundary between the piezoelectric vibration element mounting member 10D and the bonding metal film 12 can be prevented.

蓋部材３０Ｄは、凹部３１が設けられる側の主面の平均表面粗さＲａが１ｎｍ以下とるまで研磨されており、その後、凹部３１が形成された後に、接合用金属膜３２が設けられる。
この接合用金属膜３２は、第一の実施形態における蓋部材３０Ａに設けられた接合面に設けられる。つまり、蓋部材３０Ｄの外周縁と凹部３１の縁との間が接合面となり、この接合面に接合用金属膜３２が設けられる。
この接合用金属膜３２は、圧電振動素子搭載部材１０Ｄと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化される。
このように、蓋部材３０Ｄの平均表面粗さＲａが１ｎｍ以下となる表面粗さとなる状態で接合用金属膜３２を設けると、蓋部材３０Ｄと接合用金属膜３２との密着性が良く、蓋部材３０Ｄと接合用金属膜３２との境目からの気密漏れを防ぐことができる。 The lid member 30D is polished until the average surface roughness Ra of the main surface on the side where the recesses 31 are provided is 1 nm or less, and then the bonding metal film 32 is provided after the recesses 31 are formed.
The bonding metal film 32 is provided on the bonding surface provided on the lid member 30A in the first embodiment. That is, the joint surface is between the outer peripheral edge of the lid member 30 </ b> D and the edge of the recess 31, and the joining metal film 32 is provided on the joint surface.
The bonding metal film 32 is surface activated by argon plasma or oxygen plasma before being superimposed on the piezoelectric vibration element mounting member 10D.
Thus, when the bonding metal film 32 is provided in a state where the average surface roughness Ra of the lid member 30D is 1 nm or less, the adhesion between the lid member 30D and the bonding metal film 32 is good, and the lid Airtight leakage from the boundary between the member 30D and the bonding metal film 32 can be prevented.

このように構成された圧電振動素子搭載部材１０Ｄに圧電振動素子２０を搭載する。その後、
圧電振動素子搭載部材１０Ｄの接合用金属膜１２を、後述する蓋部材３０Ｄと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化する。
また、蓋部材３０Ｄの接合用金属膜３２を、圧電振動素子搭載部材１０Ｄと重ね合わせる前に、アルゴンプラズマ又は酸素プラズマなどにより表面活性化する。
この状態で、圧電振動素子搭載部材１０Ｄと蓋部材３０Ｄとを重ね合わせ、真空雰囲気中にて、常温において所定の圧力を加えて直接接合を行う。
これにより、圧電振動素子搭載部材１０Ｄと蓋部材３０Ｄとは接合された状態となる。
具体的には、圧電振動素子搭載部材１０Ｄが複数設けられたウェハに圧電振動素子２０をそれぞれ搭載し、複数の蓋部材３０Ｄが設けられたウェハを重ね合わせる。このとき、蓋部材３０Ｄの凹部３１内に入らない圧電振動素子搭載部材１０Ｄとなる部分に接合用金属膜１２が設けられ、また、蓋部材３０Ｄの凹部３１が設けられる主面にも接合用金属膜３２が設けられている。 The piezoelectric vibration element 20 is mounted on the piezoelectric vibration element mounting member 10D configured as described above. afterwards,
The surface of the bonding metal film 12 of the piezoelectric vibration element mounting member 10D is activated by argon plasma or oxygen plasma before being overlapped with a lid member 30D described later.
Further, the surface of the bonding metal film 32 of the lid member 30D is activated by argon plasma or oxygen plasma before being superimposed on the piezoelectric vibration element mounting member 10D.
In this state, the piezoelectric vibration element mounting member 10 </ b> D and the lid member 30 </ b> D are overlapped and directly bonded by applying a predetermined pressure at room temperature in a vacuum atmosphere.
Thereby, the piezoelectric vibration element mounting member 10D and the lid member 30D are joined.
Specifically, each of the piezoelectric vibration elements 20 is mounted on a wafer provided with a plurality of piezoelectric vibration element mounting members 10D, and the wafer provided with a plurality of lid members 30D is overlapped. At this time, the bonding metal film 12 is provided on the portion that becomes the piezoelectric vibration element mounting member 10D that does not enter the recess 31 of the lid member 30D, and the bonding metal is also provided on the main surface on which the recess 31 of the lid member 30D is provided. A membrane 32 is provided.

なお、接合用金属膜１２、３２は、同一材料で構成される。なお、搭載パッドと同一材料で構成しても良い。   The bonding metal films 12 and 32 are made of the same material. The mounting pad may be made of the same material.

したがって、圧電振動素子搭載部材１０Ｄの接合用金属膜１２と蓋部材３０Ｄの接合用金属膜３２とが重なった状態となる。この状態で真空雰囲気中で、常温にて所定の圧力を加えて直接接合が行われ、圧電振動素子搭載部材１０Ｄと蓋部材３０Ｄとが接合される。
その後、圧電振動素子搭載部材１０Ｄと蓋部材３０Ｄとの輪郭で切断を行い、複数の圧電振動子１０４とする。
このように第四の実施形態に係る圧電振動子１０４を構成したので、圧電振動素子搭載部材１０Ｄの接合用金属膜１２と蓋部材３０Ｄの接合用金属膜３２とが直接接合により接合されるため、常温においても所定の圧力を加えることにより直接接合で接合することができる。 Therefore, the bonding metal film 12 of the piezoelectric vibration element mounting member 10D and the bonding metal film 32 of the lid member 30D are overlapped. In this state, a predetermined pressure is applied at normal temperature in a vacuum atmosphere to perform direct bonding, and the piezoelectric vibration element mounting member 10D and the lid member 30D are bonded.
Thereafter, cutting is performed at the contours of the piezoelectric vibration element mounting member 10 </ b> D and the lid member 30 </ b> D to form a plurality of piezoelectric vibrators 104.
Since the piezoelectric vibrator 104 according to the fourth embodiment is configured as described above, the bonding metal film 12 of the piezoelectric vibration element mounting member 10D and the bonding metal film 32 of the lid member 30D are bonded by direct bonding. Even at room temperature, direct bonding can be performed by applying a predetermined pressure.

これにより、第四の実施形態に係る圧電振動子１０４は、第一の実施形態よりも気密性を向上させることができる。   Thereby, the piezoelectric vibrator 104 according to the fourth embodiment can improve the airtightness as compared with the first embodiment.

（第五の実施形態）
次に本発明の第五の実施形態に係る圧電発振器について説明する。
図６に示すように、本発明の第五の実施形態に係る圧電発振器１０５は、第一の実施形態〜第四の実施形態のいずれかに係る圧電振動子１０１〜１０４に、すくなくとも発振回路を備えた集積回路素子４０を搭載した構造となっている。 (Fifth embodiment)
Next, a piezoelectric oscillator according to a fifth embodiment of the invention will be described.
As shown in FIG. 6, the piezoelectric oscillator 105 according to the fifth embodiment of the present invention includes at least an oscillation circuit in the piezoelectric vibrators 101 to 104 according to any one of the first to fourth embodiments. The integrated circuit element 40 is provided.

この集積回路素子４０は、フリップチップ型となっており、単結晶シリコン等から成る本体の下面に、例えば、周囲の温度状態を検知する感温素子（サーミスタ）、圧電振動素子２０の温度特性を補償する温度補償データを格納するとともに該温度補償データに基づいて水晶振動素子３０の振動特性を温度変化に応じて補正する温度補償回路、該温度補償回路に接続されて所定の発振出力を生成する発振回路等の電子回路が設けられている。このような発振回路で生成された発振出力は、外部に出力された後、例えば、クロック信号等の基準信号として利用されることとなる。   This integrated circuit element 40 is of a flip chip type, and the temperature characteristics of, for example, a temperature sensitive element (thermistor) for detecting the ambient temperature state and the piezoelectric vibration element 20 are provided on the lower surface of a main body made of single crystal silicon or the like. Temperature compensation data to be compensated is stored, and a temperature compensation circuit for correcting the vibration characteristics of the crystal resonator element 30 according to a temperature change based on the temperature compensation data, and connected to the temperature compensation circuit to generate a predetermined oscillation output An electronic circuit such as an oscillation circuit is provided. The oscillation output generated by such an oscillation circuit is used as a reference signal such as a clock signal after being output to the outside.

この集積回路素子４０をセラミック容器Ｙに搭載して、第一の実施形態〜第四の実施形態のいずれかに係る圧電振動子に接続される。以下、第一の実施形態に係る圧電振動子１０１を用いた場合について説明する。
例えば、このセラミック容器Ｙは、一方の主面に凹部４１が形成され、その一方の主面に、圧電振動子１０１に設けられた外部端子Ｇの位置に対応した接続端子Ｓが設けられており、他方の主面にマザーボードなどの配線基板に接続するためのＩＣ側外部端子ＩＣＧが設けられている。また、凹部４１内には、集積回路素子４０に設けられている実装パッドに対応した位置にＩＣ搭載パッドＰ２が複数、設けられており、このＩＣ搭載パッドＰ２の所定の２つが、接続端子Ｓに接続されており、残りのＩＣ搭載パッドＰ２のうち、所定のものがＩＣ側外部端子ＩＧと接続している。
ここで、圧電振動子１０１に設けられた外部端子Ｇとセラミック容器Ｙの接続端子Ｓとは、例えば、導電性接着剤Ｄ２で接続される。
このように、本発明の第五の実施形態に係る圧電発振器１０５を構成したので、圧電振動素子２０を封止する部分からの気密漏れを防ぐことができ、また、歩留まりを向上させることができる。 The integrated circuit element 40 is mounted on the ceramic container Y and connected to the piezoelectric vibrator according to any one of the first to fourth embodiments. Hereinafter, the case where the piezoelectric vibrator 101 according to the first embodiment is used will be described.
For example, the ceramic container Y has a concave portion 41 formed on one main surface, and a connection terminal S corresponding to the position of the external terminal G provided on the piezoelectric vibrator 101 on one main surface. The other main surface is provided with an IC-side external terminal ICG for connection to a wiring board such as a mother board. In the recess 41, a plurality of IC mounting pads P2 are provided at positions corresponding to the mounting pads provided in the integrated circuit element 40. Two predetermined IC mounting pads P2 are connected to the connection terminal S. Among the remaining IC mounting pads P2, a predetermined one is connected to the IC side external terminal IG.
Here, the external terminal G provided on the piezoelectric vibrator 101 and the connection terminal S of the ceramic container Y are connected by, for example, a conductive adhesive D2.
As described above, since the piezoelectric oscillator 105 according to the fifth embodiment of the present invention is configured, airtight leakage from the portion sealing the piezoelectric vibration element 20 can be prevented, and the yield can be improved. .

なお、本発明の実施形態について説明したが、本発明は前記実施形態には限定されない。例えば、蓋部材に凹部が形成され、圧電振動素子搭載部材に凹部が形成された構造であっても良い。   In addition, although embodiment of this invention was described, this invention is not limited to the said embodiment. For example, a structure in which a recess is formed in the lid member and a recess is formed in the piezoelectric vibration element mounting member may be used.

（ａ）は、ウェハに外部端子と搭載パッドを設けた状態の一例を示す概念図であり、（ｂ）は圧電振動素子を搭載した状態の一例を示す概念図であり、（ｃ）は蓋部材を接合する前の状態を示す概念図であり、（ｄ）は、蓋部材を接合した状態を示す概念図である。(A) is a conceptual diagram which shows an example of the state which provided the external terminal and the mounting pad in the wafer, (b) is a conceptual diagram which shows an example of the state which mounted the piezoelectric vibration element, (c) is a lid | cover. It is a conceptual diagram which shows the state before joining a member, (d) is a conceptual diagram which shows the state which joined the cover member. 本発明の第一の実施形態に係る圧電振動子の一例を示す概念図である。It is a conceptual diagram which shows an example of the piezoelectric vibrator which concerns on 1st embodiment of this invention. 本発明の第二の実施形態に係る圧電振動子の一例を示す概念図である。It is a conceptual diagram which shows an example of the piezoelectric vibrator which concerns on 2nd embodiment of this invention. 本発明の第三の実施形態に係る圧電振動子の一例を示す概念図である。It is a conceptual diagram which shows an example of the piezoelectric vibrator which concerns on 3rd embodiment of this invention. 本発明の第四の実施形態に係る圧電振動子の一例を示す概念図であり、（ａ）は、蓋部材を接合する前の状態を示す概念図であり、（ｂ）は蓋部材を接合した状態を示す概念図であり、（ｃ）は個片化した状態を示す概念図である。It is a conceptual diagram which shows an example of the piezoelectric vibrator which concerns on 4th embodiment of this invention, (a) is a conceptual diagram which shows the state before joining a cover member, (b) is joining a cover member. It is a conceptual diagram which shows the state which carried out, (c) is a conceptual diagram which shows the state separated into pieces. 本発明の第五の実施形態に係る圧電発振器の一例を示す概念図である。It is a conceptual diagram which shows an example of the piezoelectric oscillator which concerns on 5th embodiment of this invention.

符号の説明Explanation of symbols

１０Ａ、１０Ｂ、１０Ｃ、１０Ｄ 圧電振動素子搭載部材
１１Ｂ、１１ＣＡ、１１ＣＢ、３１ 凹部
１２、３２ 接合用金属膜
２０ 圧電振動素子
３０Ａ、３０Ｂ、３０Ｄ 蓋部材
４０ 集積回路素子 10A, 10B, 10C, 10D Piezoelectric vibration element mounting member 11B, 11CA, 11CB, 31 Recess 12, 32 Metal film for bonding 20 Piezoelectric vibration element 30A, 30B, 30D Lid member 40 Integrated circuit element

Claims (5)

圧電振動素子と、平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる圧電振動素子搭載部材と、
凹部を有し平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる蓋部材と、
を備え、
前記圧電振動素子を搭載した圧電振動素子搭載部材と前記蓋部材とが常温で直接接合されて構成されていることを特徴とする圧電振動子。 A piezoelectric vibration element, and a piezoelectric vibration element mounting member made of a brittle material with a surface roughness at which the average surface roughness Ra is 1 nm or less,
A lid member made of a brittle material with a surface roughness having a recess and an average surface roughness Ra of 1 nm or less;
With
A piezoelectric vibrator comprising: a piezoelectric vibration element mounting member on which the piezoelectric vibration element is mounted and the lid member are directly bonded at room temperature. 圧電振動素子と、
凹部を有し平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる圧電振動素子搭載部材と、
平均表面粗さＲａが１ｎｍ以下となる表面粗さで脆性材料からなる蓋部材と、
を備え、
前記圧電振動素子を搭載した圧電振動素子搭載部材と前記蓋部材とが常温で直接接合されて構成されていることを特徴とする圧電振動子。 A piezoelectric vibration element;
A piezoelectric vibration element mounting member having a concave portion and made of a brittle material with a surface roughness of 1 nm or less in average surface roughness Ra;
A lid member made of a brittle material with a surface roughness such that the average surface roughness Ra is 1 nm or less;
With
A piezoelectric vibrator comprising: a piezoelectric vibration element mounting member on which the piezoelectric vibration element is mounted and the lid member are directly bonded at room temperature. 前記圧電振動素子搭載部材に２つの凹部が設けられていることを特徴とする請求項１又は請求項２に記載の圧電振動子。   The piezoelectric vibrator according to claim 1, wherein the piezoelectric vibration element mounting member is provided with two concave portions. 前記圧電振動素子搭載部材と前記蓋部材とのそれぞれの接合面に接合用金属膜が設けられていることを特徴とする請求項１乃至請求項３に記載の圧電振動子。   4. The piezoelectric vibrator according to claim 1, wherein a bonding metal film is provided on each bonding surface of the piezoelectric vibration element mounting member and the lid member. 5. 請求項１乃至請求項４のいずれか１項に記載の圧電振動子に、
少なくとも発振回路を備えた集積回路素子が搭載されて構成されていることを特徴とする圧電発振器。 The piezoelectric vibrator according to any one of claims 1 to 4,
A piezoelectric oscillator comprising an integrated circuit element including at least an oscillation circuit.
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