JP2010087422A - Optical-coupling semiconductor device and electronic apparatus equipped with the same - Google Patents

Optical-coupling semiconductor device and electronic apparatus equipped with the same Download PDF

Info

Publication number
JP2010087422A
JP2010087422A JP2008257568A JP2008257568A JP2010087422A JP 2010087422 A JP2010087422 A JP 2010087422A JP 2008257568 A JP2008257568 A JP 2008257568A JP 2008257568 A JP2008257568 A JP 2008257568A JP 2010087422 A JP2010087422 A JP 2010087422A
Authority
JP
Japan
Prior art keywords
emitting element
light emitting
semiconductor device
roughened
optically coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008257568A
Other languages
Japanese (ja)
Inventor
Naoki Sada
尚記 佐田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2008257568A priority Critical patent/JP2010087422A/en
Publication of JP2010087422A publication Critical patent/JP2010087422A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical-coupling semiconductor device stabilizing die-bond strength of a light emitting element while maintaining luminance of the light emitting element highly. <P>SOLUTION: Four side surfaces 14 of the light emitting element 11 include each lower smooth surface region 14a adjacent to the edges of a bottom surface 12, and each roughened surface region 14b above these smooth surface regions 14a. The lower smooth surface region 14a of each side surface 14 are smoothed regions by smoothing. The upper roughened surface regions 14b of each side surface 14 are roughened regions by roughing to heighten the luminance of the light emitting element. Since each lower smooth surface region 14a adjacent to the edge of the bottom surface 12 is a smooth surface, capillary phenomenon is not caused in each smooth surface region 14a, and no hardening solvent of silver paste of the bottom surface 12 of the light emitting element 11 is soaked up through each smooth surface region 14a. Thereby hardening of the silver paste is sufficiently accelerated and die bond strength is stabilized. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、発光素子もしくは受光素子をリードフレーム上にダイボンドした光結合型半導体装置、及びそれを備える電子機器に関する。   The present invention relates to an optically coupled semiconductor device in which a light emitting element or a light receiving element is die-bonded on a lead frame, and an electronic apparatus including the same.

従来の光結合型半導体装置としては、例えば図９に示すようなものがある。また、その製造工程は、図１０のフローチャートに示すような工程である。尚、図１０において、溶接手前までの工程は発光素子と受光素子で別々に行われ、溶接以降の工程は該各素子共通のものとなる。   An example of a conventional optically coupled semiconductor device is shown in FIG. The manufacturing process is a process as shown in the flowchart of FIG. In FIG. 10, the steps up to welding are performed separately for the light emitting element and the light receiving element, and the processes after welding are common to the respective elements.

この光結合型半導体装置１０１では、発光素子１０２及び受光素子１０３を各リードフレーム１０４、１０５のヘッダー１０４ａ、１０５ａにそれぞれ搭載してダイボンドし、発光素子１０２及び受光素子１０３をワイヤーボンドによるそれぞれのワイヤー１０６、１０７を介して各リードフレーム１０４、１０５に接続し、発光素子１０２を応力緩和のためのシリコーン樹脂１０８によりプリコートしている。そして、発光素子１０２と受光素子１０３を対向配置して、それぞれの光軸を相互に一致させ、各リードフレーム１０４、１０５を位置決め固定する（溶接）。更に、発光素子１０２と受光素子１０３間の光伝達経路となる透光性エポキシ樹脂１１１を一次モールドにより形成し、各リードフレーム１０４、１０５の１次タイバーカットを行なってから、遮光性エポキシ樹脂（パッケージ）１１２をトランスファーモールドにより形成する。この後、外装メッキ、各リードフレーム１０４、１０５の２次タイバーカット、リードフォーミング（パッケージ外側のリードフレーム部分の成形）、絶縁耐圧試験（発光素子１０２と受光素子１０３間の絶縁性検査）、電気的特性検査（電気的諸特性の測定）、マーキング、外観検査、梱包を経て、この光結合型半導体装置１０１を製品として出荷する。   In this optically coupled semiconductor device 101, the light emitting element 102 and the light receiving element 103 are mounted on the headers 104a and 105a of the lead frames 104 and 105, respectively, and die bonded, and the light emitting element 102 and the light receiving element 103 are respectively connected by wire bonding. The light emitting element 102 is pre-coated with a silicone resin 108 for stress relaxation, connected to the lead frames 104 and 105 through 106 and 107. Then, the light emitting element 102 and the light receiving element 103 are arranged to face each other, the optical axes thereof are aligned with each other, and the lead frames 104 and 105 are positioned and fixed (welding). Further, a light-transmitting epoxy resin 111 serving as a light transmission path between the light-emitting element 102 and the light-receiving element 103 is formed by primary molding, and the lead frames 104 and 105 are subjected to primary tie bar cutting. Package) 112 is formed by transfer molding. Thereafter, exterior plating, secondary tie bar cut of each lead frame 104, 105, lead forming (molding of the lead frame portion outside the package), dielectric strength test (insulation test between the light emitting element 102 and the light receiving element 103), electrical The optically coupled semiconductor device 101 is shipped as a product through a physical characteristic inspection (measurement of various electrical characteristics), marking, appearance inspection, and packaging.

尚、トランスファーモールドの他に、インジェクションモールドや注入型モールド等を適用しても良い。また、１次モールドにより形成される透光性エポキシ樹脂の代わりに、透明シリコーン樹脂を用いて、発光素子１０２と受光素子１０３間の光伝達経路を形成しても構わない。   In addition to the transfer mold, an injection mold, an injection mold, or the like may be applied. In addition, a light transmission path between the light emitting element 102 and the light receiving element 103 may be formed using a transparent silicone resin instead of the translucent epoxy resin formed by the primary mold.

このような光結合型半導体装置は、電源、ＯＡ機器、家電製品、ＦＡ機器等の電子機器に適用されるが、近年の電子機器の省エネルギー化に伴い、光結合型半導体装置の低電力化が強く要求されている。この要求に応える一つの方法として、発光素子表面を粗面化して、発光素子の輝度を高くするという方法がある。   Such an optically coupled semiconductor device is applied to electronic devices such as power supplies, OA devices, home appliances, and FA devices. However, with the recent energy saving of electronic devices, the power consumption of optically coupled semiconductor devices has been reduced. There is a strong demand. As one method for meeting this requirement, there is a method of increasing the luminance of the light emitting element by roughening the surface of the light emitting element.

また、特許文献１には、光半導体素子をパッケージに封止した光半導体装置が記載されている。ここでは、パッケージ内に配置された光半導体素子と、光半導体素子の一方の電極を第１パッケージ電極に接続する導電性ワイヤーと、光半導体素子が透光性絶縁体を介して配置された第２パッケージ電極と、光半導体素子の他方の電極を第２パッケージ電極に電気的に接続する導電性ワイヤーとを有し、光半導体素子が配置される第２パッケージ電極の配置部を平滑面とし、かつ導電性ワイヤーが接続される第２パッケージ電極の接続部を粗面としている。
特開平９−３０７１４５号公報 Further, Patent Document 1 describes an optical semiconductor device in which an optical semiconductor element is sealed in a package. Here, the optical semiconductor element disposed in the package, the conductive wire connecting one electrode of the optical semiconductor element to the first package electrode, and the optical semiconductor element disposed via the translucent insulator. Two package electrodes and a conductive wire that electrically connects the other electrode of the optical semiconductor element to the second package electrode, and the arrangement portion of the second package electrode where the optical semiconductor element is arranged is a smooth surface, And the connection part of the 2nd package electrode to which a conductive wire is connected is made into the rough surface.
JP-A-9-307145

ところで、先に述べたように発光素子表面を粗面化したならば、その素子の輝度が上昇する。しかしながら、本願の発明者等は、発光素子表面全体が粗面化されたならば、次のような問題が生じることを発見した。   By the way, if the surface of the light emitting element is roughened as described above, the luminance of the element increases. However, the inventors of the present application have found that the following problem occurs if the entire surface of the light emitting element is roughened.

ダイボンド工程では、発光素子の底面とリードフレーム間に銀ペーストを介在させて、発光素子をリードフレーム上に固定する。ところが、発光素子の側面全体が粗面化されている場合は、銀ペーストに含まれている硬化用の溶剤が発光素子の底面から側面を通じて流出するという現象が生じる。これは、発光素子側面の粗面に毛細管現象が発生して、この毛細管現象により硬化用の溶剤が吸い上げられるためである。この結果として、銀ペーストの硬化が十分でなくなり、ダイボンド強度が安定しなくなるという問題が生じた。   In the die bonding step, the light emitting element is fixed on the lead frame by interposing a silver paste between the bottom surface of the light emitting element and the lead frame. However, when the entire side surface of the light emitting element is roughened, a phenomenon occurs in which the curing solvent contained in the silver paste flows out from the bottom surface of the light emitting element through the side surface. This is because a capillary phenomenon occurs on the rough surface of the light emitting element, and the curing solvent is sucked up by the capillary phenomenon. As a result, there was a problem that the silver paste was not sufficiently cured and the die bond strength became unstable.

尚、特許文献１では、第２パッケージ電極の接続部を選択的に粗面化しているものの、発光素子表面を粗面化しているわではなく、本願の発明者等が発見した現象の記載もない。   In Patent Document 1, although the connection portion of the second package electrode is selectively roughened, the surface of the light emitting element is not roughened, and the phenomenon discovered by the inventors of the present application is also described. Absent.

そこで、本発明は、上記従来の問題点に鑑みてなされたものであり、発光素子の輝度を高く保持しつつ、発光素子のダイボンド強度を安定化させることが可能な光結合型半導体装置、及びそれを備える電子機器を提供することを目的とする。   Therefore, the present invention has been made in view of the above-described conventional problems, and an optically coupled semiconductor device capable of stabilizing the die bond strength of the light emitting element while maintaining the luminance of the light emitting element high, and An object is to provide an electronic apparatus including the same.

上記課題を解決するために、本発明の光結合型半導体装置は、入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる側面とを有し、前記底面の縁に隣接する前記側面の領域を滑面化し、この側面の滑面化された領域を少なくとも除く該発光素子表面の他の領域を粗面化している。   In order to solve the above problems, an optically coupled semiconductor device of the present invention includes: a light emitting element that emits light by inputting an input signal; and a light receiving element that receives light from the light emitting element and outputs an output signal. In the optically coupled semiconductor device in which a light emitting element is die-bonded on a lead frame, the light emitting element has a bottom surface facing the lead frame and a side surface rising from an edge of the bottom surface, and is adjacent to the edge of the bottom surface. A region on the side surface is smoothed, and another region on the surface of the light emitting element excluding at least the smoothed region on the side surface is roughened.

例えば、前記発光素子の側面は、滑面化された領域と、粗面化された領域とを含み、前記底面の縁と前記側面の粗面化された領域との間に前記側面の滑面化された領域を介在させている。   For example, the side surface of the light emitting element includes a smoothed region and a roughened region, and the side smoothed surface between the edge of the bottom surface and the roughened region of the side surface. Interspersed regions.

また、前記発光素子の側面の滑面化された領域と粗面化された領域との間に、段差を設けている。   Further, a step is provided between the smoothed region and the roughened region on the side surface of the light emitting element.

更に、前記側面の滑面化された領域は、前記底面に対して鋭角をなす傾斜面となっている。   Furthermore, the smoothed region of the side surface is an inclined surface that forms an acute angle with respect to the bottom surface.

また、本発明の光結合型半導体装置は、入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、前記各側面として滑面化側面及び粗面化側面を設け、前記粗面化側面に段差を設けている。   The optically coupled semiconductor device of the present invention includes a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is disposed on a lead frame. In the optically coupled semiconductor device die-bonded to, the light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from an edge of the bottom surface, and each of the side surfaces is a smoothed side surface and a roughened surface. A side surface is provided, and a step is provided on the roughened side surface.

更に、本発明の光結合型半導体装置は、入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、前記各側面として滑面化側面と粗面化側面を設け、前記粗面化側面は、前記底面に対して鋭角をなす傾斜面を含んでいる。   The optically coupled semiconductor device of the present invention further includes a light emitting element that emits light upon receiving an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is disposed on the lead frame. In the optically coupled semiconductor device die-bonded to, the light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from an edge of the bottom surface, and each of the side surfaces is a smooth side surface and a roughened surface. A side surface is provided, and the roughened side surface includes an inclined surface that forms an acute angle with respect to the bottom surface.

また、本発明の光結合型半導体装置は、入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、前記粗面化側面に段差を設けている。   The optically coupled semiconductor device of the present invention includes a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is disposed on a lead frame. In the optically coupled semiconductor device die-bonded to, the light emitting element has a bottom surface facing the lead frame and a roughened side surface rising from an edge of the bottom surface, and a step is provided on the roughened side surface. .

更に、本発明の光結合型半導体装置は、入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、前記粗面化側面は、前記底面に対して鋭角をなす傾斜面を含んでいる。   The optically coupled semiconductor device of the present invention further includes a light emitting element that emits light upon receiving an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is disposed on the lead frame. In the optically coupled semiconductor device die-bonded to, the light emitting element has a bottom surface facing the lead frame and a roughened side surface rising from an edge of the bottom surface, and the roughened side surface is And an inclined surface with an acute angle.

また、前記発光素子の底面に複数の電極を離間配置している。あるいは、前記発光素子の底面全体を電極で覆っている。   A plurality of electrodes are spaced from each other on the bottom surface of the light emitting element. Alternatively, the entire bottom surface of the light emitting element is covered with electrodes.

一方、本発明の電子機器は、上記本発明の光結合型半導体装置を備えている。   On the other hand, an electronic apparatus of the present invention includes the above-described optically coupled semiconductor device of the present invention.

本発明の光結合型半導体装置では、発光素子は、リードフレームに対向する底面と、この底面の縁から立ち上がる側面とを有し、底面の縁に隣接する側面の領域を滑面化し、この側面の滑面化された領域を少なくとも除く該発光素子表面の他の領域を粗面化している。このように発光素子表面の他の領域を粗面化していることから、発光素子の輝度を高くすることができる。また、発光素子の底面の縁に隣接する側面の滑面化された領域では毛細管現象が発生しないので、発光素子の底面に銀ペーストが付着した状態においては、銀ペーストの硬化用溶剤が発光素子の底面から側面を通じて流出するという現象が生じ得ず、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。   In the optically coupled semiconductor device of the present invention, the light emitting element has a bottom surface facing the lead frame and a side surface rising from the edge of the bottom surface, and the side surface region adjacent to the edge of the bottom surface is smoothed. Other regions of the light emitting element surface except at least the smoothed region are roughened. Thus, since the other area | region of the light emitting element surface is roughened, the brightness | luminance of a light emitting element can be made high. In addition, since the capillary phenomenon does not occur in the smoothed region of the side surface adjacent to the edge of the bottom surface of the light emitting element, the silver paste curing solvent is used as the light emitting element when the silver paste is attached to the bottom surface of the light emitting element. The phenomenon of flowing out from the bottom surface through the side surface cannot occur, the curing of the silver paste is sufficiently promoted, and the die bond strength is stabilized.

例えば、発光素子の側面は、滑面化された領域と、粗面化された領域とを含み、底面の縁と側面の粗面化された領域との間に側面の滑面化された領域を介在させている。この場合、発光素子の側面の滑面化された領域と粗面化された領域との間に段差を設けたり、側面の滑面化された領域を底面に対して鋭角をなす傾斜面としてもよい。銀ペーストがその段差に食い込んだり傾斜面を覆って、発光素子が強固に固定される。   For example, the side surface of the light emitting element includes a smoothed region and a roughened region, and a smoothed region of the side surface between the edge of the bottom surface and the roughened region of the side surface. Is interposed. In this case, a step may be provided between the smoothed region and the roughened region on the side surface of the light emitting element, or the smoothed region of the side surface may be an inclined surface that forms an acute angle with respect to the bottom surface. Good. The silver paste bites into the step or covers the inclined surface, so that the light emitting element is firmly fixed.

また、本発明の光結合型半導体装置では、発光素子は、リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、各側面として滑面化側面及び粗面化側面を設け、粗面化側面に段差を設けている。滑面化側面では、毛細管現象が発生しないので、銀ペーストの硬化用溶剤が発光素子の底面から側面を通じて流出するという現象が生じ得ず、このために底面から該側面にかけては銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。また、粗面化側面では、毛細管現象により発光素子底面の銀ペーストの硬化用溶剤が吸い上げられることから、銀ペーストが十分に硬化するとはいえないものの、銀ペーストが粗面化側面の段差に食い込むので、発光素子の固定強度を確保することができる。   In the optically coupled semiconductor device of the present invention, the light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from the edge of the bottom surface, and each side surface is a smooth surface and a rough surface. And a step is provided on the roughened side surface. Since the capillary action does not occur on the smooth side surface, the phenomenon that the solvent for curing the silver paste flows out from the bottom surface of the light emitting element through the side surface cannot occur, and therefore the silver paste is cured from the bottom surface to the side surface. Sufficiently promoted and stable die bond strength. On the roughened side, the silver paste hardens up due to the capillary phenomenon, so the silver paste does not cure sufficiently, but the silver paste bites into the step on the roughened side. Therefore, the fixing strength of the light emitting element can be ensured.

更に、本発明の光結合型半導体装置では、発光素子は、リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、各側面として滑面化側面と粗面化側面を設け、粗面化側面は、底面に対して鋭角をなす傾斜面を含んでいる。本発明においても、滑面化側面では、毛細管現象が発生しないので、底面から該側面にかけては銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。また、粗面化側面では、銀ペーストが十分に硬化するとはいえないものの、銀ペーストが傾斜面となった粗面化側面を覆うので、発光素子の固定強度を確保することができる。   Furthermore, in the optically coupled semiconductor device of the present invention, the light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from the edge of the bottom surface, and each of the side surfaces is a smooth surface and a rough surface. The roughened side surface includes an inclined surface that forms an acute angle with respect to the bottom surface. Also in the present invention, since the capillary phenomenon does not occur on the smooth side surface, the hardening of the silver paste is sufficiently promoted from the bottom surface to the side surface, and the die bond strength is stabilized. Moreover, although it cannot be said that the silver paste is sufficiently cured on the roughened side surface, the silver paste covers the roughened side surface that has become an inclined surface, so that the fixing strength of the light emitting element can be secured.

また、本発明の光結合型半導体装置では、発光素子は、リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、粗面化側面に段差を設けている。この粗面化側面では、毛細管現象により発光素子底面の銀ペーストの硬化用溶剤が吸い上げられることから、銀ペーストが十分に硬化するとはいえないものの、銀ペーストが粗面化側面の段差に食い込むので、発光素子の固定強度を確保することができる。   In the optically coupled semiconductor device of the present invention, the light emitting element has a bottom surface facing the lead frame and a roughened side surface rising from the edge of the bottom surface, and a step is provided on the roughened side surface. On the roughened side surface, the silver paste is not fully cured because the solvent for the silver paste on the bottom surface of the light-emitting element is sucked up by the capillary phenomenon, but the silver paste bites into the steps on the roughened side surface. The fixing strength of the light emitting element can be ensured.

更に、本発明の光結合型半導体装置では、発光素子は、リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、粗面化側面は、底面に対して鋭角をなす傾斜面を含んでいる。この粗面化側面では、銀ペーストが十分に硬化するとはいえないものの、銀ペーストが傾斜面となった粗面化側面を覆うので、発光素子の固定強度を確保することができる。   Further, in the optically coupled semiconductor device of the present invention, the light emitting element has a bottom surface facing the lead frame and a roughened side surface rising from an edge of the bottom surface, and the roughened side surface has an acute angle with respect to the bottom surface. Including an inclined surface. Although it cannot be said that the silver paste is sufficiently hardened on the roughened side surface, the silver paste covers the roughened side surface which is an inclined surface, so that the fixing strength of the light emitting element can be ensured.

また、発光素子の底面に複数の電極を離間配置している。あるいは、発光素子の底面全体を電極で覆っている。前者の場合は、電極材料を節減することができ、後者の場合は、発光素子底面の電極の面積が広がることから、接着面積が増大して、より安定したダイボンド強度が得られる。   A plurality of electrodes are spaced from each other on the bottom surface of the light emitting element. Alternatively, the entire bottom surface of the light emitting element is covered with electrodes. In the former case, the electrode material can be saved, and in the latter case, the area of the electrode on the bottom surface of the light emitting element is widened, so that the adhesion area is increased and a more stable die bond strength can be obtained.

一方、本発明の電子機器では、上記本発明の光結合型半導体装置を備えることから、同様の作用効果を奏する。電子機器としては、電源、ＯＡ機器、家電製品、ＦＡ機器等がある。   On the other hand, since the electronic device of the present invention includes the above-described optically coupled semiconductor device of the present invention, the same effects can be obtained. Electronic devices include power supplies, OA devices, home appliances, FA devices, and the like.

以下、本発明の実施形態を添付図面を参照して詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明の光結合型半導体装置の第１実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図１の発光素子１１を用いている点が異なる。   FIG. 1 is a diagram showing a light emitting element in the first embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9 except that the light emitting element 11 of FIG. 1 is used instead of the light emitting element 102 of FIG.

図１(a)及び(b)は、発光素子１１の側面及び底面を示している。図１(a)及び(b)から明らかなように発光素子１１は、四角柱状のものであり、その底面１２に複数の電極１３を斑状に離間配置している。これにより、各電極１３の面積が減少し、電極材料を節減することができる。   1A and 1B show the side surface and the bottom surface of the light-emitting element 11. As is clear from FIGS. 1A and 1B, the light emitting element 11 has a quadrangular prism shape, and a plurality of electrodes 13 are spaced apart from each other on the bottom surface 12 thereof. Thereby, the area of each electrode 13 can be reduced and the electrode material can be saved.

また、発光素子１１の４つの側面１４は、底面１２の縁に隣接する下側の各滑面化領域１４aと、これらの滑面化領域１４aの上側の各粗面化領域１４bとを含んでいる。従って、底面１２の縁と上側の粗面化領域１４bとの間に下側の滑面化領域１４aが介在している。   Further, the four side surfaces 14 of the light emitting element 11 include lower smoothed regions 14a adjacent to the edge of the bottom surface 12, and roughened regions 14b above the smoothed regions 14a. Yes. Accordingly, the lower smoothed region 14a is interposed between the edge of the bottom surface 12 and the upper roughened region 14b.

各側面１４の下側の滑面化領域１４aは、平滑化処理を施されて、平滑面にされた領域である。また、各側面１４の上側の粗面化領域１４bは、発光素子の輝度を高くするために、粗面化処理を施されて、粗面にされた領域である。発光素子１１の輝度を高くするという観点からは、発光素子１１の上面も粗面化することが好ましい。滑面化領域１４a及び粗面化領域１４bのいずれも、周知の化学的研磨や機械的研磨等の処理により形成することができる。   The smooth surface area 14a on the lower side of each side surface 14 is an area that has been smoothed by being smoothed. In addition, the roughened region 14b on the upper side of each side surface 14 is a region that has been roughened by performing a roughening process in order to increase the luminance of the light emitting element. From the viewpoint of increasing the luminance of the light emitting element 11, it is preferable that the upper surface of the light emitting element 11 is also roughened. Both the smoothed region 14a and the roughened region 14b can be formed by a known process such as chemical polishing or mechanical polishing.

このような発光素子１１は、図９の発光素子１０２の代わりに、リードフレーム１０４のヘッダー１０４a上に銀ペーストを用いてダイボンドされる。これにより、発光素子１１の底面１２の各電極１３が銀ペーストを通じてリードフレーム１０４のヘッダー１０４aに接続される。勿論、受光素子１０３もリードフレーム１０５のヘッダー１０５ａに搭載されてダイボンドされる。そして、発光素子１１及び受光素子１０３をワイヤーボンドによるそれぞれのワイヤー１０６、１０７を介して各リードフレーム１０４、１０５に接続し、発光素子１１を応力緩和のためのシリコーン樹脂１０８によりプリコートし、発光素子１１と受光素子１０３を対向配置して、それぞれの光軸を相互に一致させ、各リードフレーム１０４、１０５を位置決め固定する（溶接）。更に、発光素子１１と受光素子１０３間の光伝達経路となる透光性エポキシ樹脂１１１を一次モールドにより形成し、各リードフレーム１０４、１０５の１次タイバーカットを行なってから、遮光性エポキシ樹脂（パッケージ）１１２をトランスファーモールドにより形成する。この後、外装メッキ、各リードフレーム１０４、１０５の２次タイバーカット、リードフォーミング（パッケージ外側のリードフレーム部分の成形）、絶縁耐圧試験（発光素子１１と受光素子１０３間の絶縁性検査）、電気的特性検査（電気的諸特性の測定）、マーキング、外観検査、梱包を経て、本実施形態の光結合型半導体装置を製品として出荷する。   Such a light emitting element 11 is die-bonded using a silver paste on the header 104a of the lead frame 104 instead of the light emitting element 102 of FIG. Thereby, each electrode 13 on the bottom surface 12 of the light emitting element 11 is connected to the header 104a of the lead frame 104 through the silver paste. Of course, the light receiving element 103 is also mounted on the header 105a of the lead frame 105 and die bonded. Then, the light-emitting element 11 and the light-receiving element 103 are connected to the lead frames 104 and 105 via the respective wires 106 and 107 by wire bonding, and the light-emitting element 11 is pre-coated with a silicone resin 108 for stress relaxation. 11 and the light receiving element 103 are arranged opposite to each other, their optical axes are made to coincide with each other, and the lead frames 104 and 105 are positioned and fixed (welding). Further, a light-transmitting epoxy resin 111 serving as a light transmission path between the light-emitting element 11 and the light-receiving element 103 is formed by primary molding, and the lead frames 104 and 105 are subjected to primary tie bar cutting. Package) 112 is formed by transfer molding. Thereafter, exterior plating, secondary tie bar cut of each lead frame 104, 105, lead forming (molding of the lead frame portion outside the package), dielectric strength test (insulation test between the light emitting element 11 and the light receiving element 103), electrical The optically coupled semiconductor device according to the present embodiment is shipped as a product through physical characteristic inspection (measurement of various electrical characteristics), marking, appearance inspection, and packaging.

ここで、先に述べたように発光素子側面全体を粗面化したならば、発光素子側面の粗面の毛細管現象により、銀ペーストに含まれている硬化用の溶剤が発光素子の底面から側面を通じて流出し、銀ペーストの硬化が十分でなくなり、ダイボンド強度が安定しなくなる。   Here, if the entire side surface of the light emitting device is roughened as described above, the curing solvent contained in the silver paste is removed from the bottom surface of the light emitting device due to the capillary action of the rough surface of the light emitting device. The silver paste is not sufficiently cured and the die bond strength is not stable.

ところが、本実施形態では、底面１２の縁に隣接する下側の各滑面化領域１４aが滑面であることから、これらの滑面化領域１４aでは毛細管現象が発生せず、発光素子１１の底面１２とリードフレーム１０４のヘッダー１０４a間に介在する銀ペーストの硬化用溶剤が各滑面化領域１４aを通じて吸い上げられることはない。このため、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。   However, in this embodiment, since each lower smoothed region 14a adjacent to the edge of the bottom surface 12 is a smooth surface, capillary action does not occur in these smoothed regions 14a, and the light emitting element 11 The silver paste curing solvent interposed between the bottom surface 12 and the header 104a of the lead frame 104 is not sucked up through each smoothed region 14a. For this reason, hardening of a silver paste is fully accelerated | stimulated and die bond strength is stabilized.

尚、発光素子１１の底面１２の各電極１３の代わりに、図２に示すように底面１２全体を覆う電極１５を適用してもよい。これにより、電極１５の接着面積が増大して、より安定したダイボンド強度が得られる。   Instead of each electrode 13 on the bottom surface 12 of the light emitting element 11, an electrode 15 that covers the entire bottom surface 12 as shown in FIG. 2 may be applied. Thereby, the adhesion area of the electrode 15 increases, and more stable die bond strength can be obtained.

図３は、本発明の光結合型半導体装置の第２実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図３の発光素子２１を用いている点が異なる。   FIG. 3 is a view showing a light emitting element in the second embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has a configuration substantially similar to that of the device of FIG. 9 except that the light emitting element 21 of FIG. 3 is used instead of the light emitting element 102 of FIG.

図３(a)及び(b)は、発光素子２１の側面及び底面を示している。尚、図３において、図１と同様の作用を果たす部位には、同じ符号を付している。   3A and 3B show the side surface and the bottom surface of the light emitting element 21. FIG. In FIG. 3, the same reference numerals are given to portions that perform the same operation as in FIG. 1.

この発光素子２１は、図１の下側の各滑面化領域１４aと上側の各粗面化領域１４b間にそれぞれの段差２２を設けたものであり、その底面１２に複数の電極１３を斑状に離間配置している。   This light emitting element 21 is provided with respective steps 22 between each lower smoothed region 14a and each upper roughened region 14b in FIG. 1, and a plurality of electrodes 13 are patched on the bottom surface 12 thereof. Are spaced apart.

このような発光素子２１の立体形状は、例えばエッチング処理により形成することができる。発光素子２１の立体形状、すなわち各側面１４の段差２２を形成した後、下側の各滑面化領域１４aを滑面化し、上側の各粗面化領域１４bを粗面化する。   Such a three-dimensional shape of the light emitting element 21 can be formed by, for example, an etching process. After forming the three-dimensional shape of the light-emitting element 21, that is, the step 22 on each side surface 14, each lower smooth surface region 14a is smoothed and each upper rough surface region 14b is roughened.

このような発光素子２１においても、図１の発光素子１１と同様に、底面１２の縁に隣接する下側の各滑面化領域１４aが滑面であることから、これらの滑面化領域１４aでは毛細管現象が発生せず、銀ペーストの硬化用溶剤が発光素子２１の底面１２から各滑面化領域１４aを通じて流出することはない。このため、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。また、銀ペーストの一部が発光素子２１の各側面１４の段差２２に達して食い込むので、発光素子２１の固定強度がより向上する。   Also in such a light emitting element 21, since each lower smooth surface area 14a adjacent to the edge of the bottom surface 12 is a smooth surface, similarly to the light emitting element 11 of FIG. 1, these smooth surface areas 14a. Then, the capillary phenomenon does not occur and the silver paste curing solvent does not flow out from the bottom surface 12 of the light emitting element 21 through each smoothed region 14a. For this reason, hardening of a silver paste is fully accelerated | stimulated and die bond strength is stabilized. In addition, since a part of the silver paste reaches the step 22 on each side surface 14 of the light emitting element 21 and bites in, the fixing strength of the light emitting element 21 is further improved.

尚、発光素子２１の底面１２の各電極１３の代わりに、図２に示すように底面１２全体を覆う電極１５を適用してもよい。   Instead of each electrode 13 on the bottom surface 12 of the light emitting element 21, an electrode 15 that covers the entire bottom surface 12 as shown in FIG. 2 may be applied.

図４は、本発明の光結合型半導体装置の第３実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図４の発光素子３１を用いている点が異なる。   FIG. 4 is a view showing a light emitting element in the third embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9 except that the light emitting element 31 of FIG. 4 is used instead of the light emitting element 102 of FIG.

図４(a)及び(b)は、発光素子３１の側面及び底面を示している。尚、図４において、図１と同様の作用を果たす部位には、同じ符号を付している。   4A and 4B show the side surface and the bottom surface of the light emitting element 31. FIG. In FIG. 4, the same reference numerals are given to portions that perform the same operation as in FIG. 1.

この発光素子３１では、図１の下側の各滑面化領域１４cを底面１２に対して鋭角をなす傾斜面としている。このため、下側の各滑面化領域１４cで囲まれる発光素子３１の部分が、底面１２から上側の各粗面化領域１４bに至るまでに徐々に細くなるテーパー状になっている。   In the light emitting element 31, each of the lower smoothed regions 14 c in FIG. 1 is an inclined surface that forms an acute angle with respect to the bottom surface 12. For this reason, the portion of the light emitting element 31 surrounded by each lower smooth surface region 14c has a tapered shape that gradually decreases from the bottom surface 12 to each upper rough surface region 14b.

このような発光素子３１の立体形状は、例えばエッチング処理により形成することができる。発光素子３１の立体形状、すなわち傾斜している下側の滑面化領域１４cを形成した後、下側の各滑面化領域１４cを滑面化し、上側の各粗面化領域１４bを粗面化する。   Such a three-dimensional shape of the light emitting element 31 can be formed by, for example, an etching process. After forming the three-dimensional shape of the light emitting element 31, that is, the inclined lower smoothed region 14c, the lower smoothed region 14c is smoothed, and the upper roughened region 14b is roughened. Turn into.

このような発光素子３１においても、図１の発光素子１１と同様に、底面１２の縁に隣接する下側の各滑面化領域１４cが滑面であることから、これらの滑面化領域１４cでは毛細管現象が発生せず、銀ペーストの硬化用溶剤が発光素子２１の底面１２から各滑面化領域１４cを通じて流出することはなく、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。また、銀ペーストが傾斜している下側の各滑面化領域１４cを部分的に覆うので、発光素子３１の固定強度がより向上する。   Also in such a light emitting element 31, since each lower smooth surface area 14c adjacent to the edge of the bottom surface 12 is a smooth surface, similarly to the light emitting element 11 of FIG. 1, these smooth surface areas 14c. In this case, capillary action does not occur, and the silver paste curing solvent does not flow out from the bottom surface 12 of the light emitting element 21 through each smoothed region 14c, so that the curing of the silver paste is sufficiently promoted and the die bond strength is stabilized. . Further, since the lower smooth surfaces 14c where the silver paste is inclined are partially covered, the fixing strength of the light emitting element 31 is further improved.

尚、発光素子３１の底面１２の各電極１３の代わりに、図２に示すように底面１２全体を覆う電極１５を適用してもよい。   Instead of each electrode 13 on the bottom surface 12 of the light emitting element 31, an electrode 15 that covers the entire bottom surface 12 may be applied as shown in FIG.

図５は、本発明の光結合型半導体装置の第４実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図３の発光素子４１を用いている点が異なる。   FIG. 5 is a view showing a light emitting element in the fourth embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9, except that the light emitting element 41 of FIG. 3 is used instead of the light emitting element 102 of FIG.

図５(a)及び(b)は、発光素子４１の側面及び上面を示している。この発光素子４１では、相互に対向する一対の側面４２にそれぞれの段差４３を形成し、相互に対向する他の一対の側面４４を平坦面としている。それぞれの段差４３を有する各側面４２は、それらの側面全体が粗面化されている。また、平坦面となっている他の各側面４４は、底面１２の縁に隣接する下側の各滑面化領域４４aと、これらの滑面化領域４４aの上側の各粗面化領域４４bとを有している。   5A and 5B show the side surface and the top surface of the light emitting element 41. FIG. In this light emitting element 41, each level | step difference 43 is formed in a pair of side surface 42 which mutually opposes, and another pair of side surface 44 which mutually opposes is made into the flat surface. Each of the side surfaces 42 having the respective steps 43 is roughened. Further, each of the other side surfaces 44 that are flat surfaces includes lower smoothed regions 44a adjacent to the edge of the bottom surface 12, and roughened regions 44b above the smoothed regions 44a. have.

このような発光素子４１の立体形状は、例えばエッチング処理により形成することができる。発光素子４１の立体形状、すなわち一対の側面４２の段差４３を形成した後、他の一対の側面４４における下側の各滑面化領域４４aを滑面化し、一対の側面４２全体及び他の一対の側面４４における上側の各粗面化領域４４bを粗面化する。   Such a three-dimensional shape of the light emitting element 41 can be formed by, for example, an etching process. After forming the three-dimensional shape of the light emitting element 41, that is, the step 43 of the pair of side surfaces 42, the lower smooth surface regions 44 a on the other pair of side surfaces 44 are smoothed, and the entire pair of side surfaces 42 and the other pair are formed. Each of the upper roughened regions 44b on the side surface 44 is roughened.

このような発光素子４１においては、底面１２の縁に隣接する各側面４４の下側の滑面化領域４４aが滑面であることから、これらの滑面化領域４４aでは毛細管現象が発生せず、銀ペーストの硬化用溶剤が発光素子４１の底面１２から各滑面化領域４４aを通じて流出することはない。このため、各側面４４では、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。   In such a light emitting element 41, since the smoothed region 44a below each side surface 44 adjacent to the edge of the bottom surface 12 is a smooth surface, no capillary phenomenon occurs in these smoothed regions 44a. The silver paste curing solvent does not flow out from the bottom surface 12 of the light emitting element 41 through each smoothed region 44a. For this reason, in each side surface 44, hardening of a silver paste is fully accelerated | stimulated and die-bonding strength is stabilized.

また、各側面４２では、側面全体が粗面化されていることから、毛細管現象により発光素子４１の底面１２の銀ペーストの硬化用溶剤が吸い上げられ、銀ペーストが十分に硬化するとはいえないものの、銀ペーストの一部が各側面４２の段差４３に食い込むので、発光素子４１の固定強度を確保することができる。   Further, in each side surface 42, since the entire side surface is roughened, the silver paste curing solvent on the bottom surface 12 of the light emitting element 41 is sucked up by the capillary phenomenon, and it cannot be said that the silver paste is sufficiently cured. Since a part of the silver paste bites into the step 43 on each side surface 42, the fixing strength of the light emitting element 41 can be ensured.

尚、発光素子４１の底面１２には、図１(b)と同様の各電極１３を設けても、また図２に示すような底面１２全体を覆う電極１５を設けてもよい。   Each electrode 13 similar to that shown in FIG. 1B may be provided on the bottom surface 12 of the light emitting element 41, or an electrode 15 covering the entire bottom surface 12 as shown in FIG. 2 may be provided.

図６は、本発明の光結合型半導体装置の第５実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図６の発光素子５１を用いている点が異なる。   FIG. 6 is a view showing a light emitting element in the fifth embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9 except that the light emitting element 51 of FIG. 6 is used instead of the light emitting element 102 of FIG.

図６(a)及び(b)は、発光素子５１の側面及び上面を示している。この発光素子５１では、相互に対向する一対の側面５２に下側領域５２a及び上側領域５２bを設けて、下側領域５２aを底面１２に対して鋭角をなす傾斜面とし、また相互に対向する他の一対の側面５３を平坦面としている。それぞれの傾斜面を含む各側面５２は、それらの側面全体が粗面化されている。また、平坦面となっている他の各側面５３は、底面１２の縁に隣接する下側の各滑面化領域５３aと、これらの滑面化領域５３aの上側の各粗面化領域５３bとを有している。   6A and 6B show the side surface and the top surface of the light emitting element 51. FIG. In this light emitting element 51, a lower region 52a and an upper region 52b are provided on a pair of side surfaces 52 opposed to each other, and the lower region 52a is formed as an inclined surface that forms an acute angle with respect to the bottom surface 12. The pair of side surfaces 53 are flat surfaces. Each of the side surfaces 52 including the respective inclined surfaces is roughened. Further, each of the other side surfaces 53 that are flat surfaces includes a lower smoothed region 53a adjacent to the edge of the bottom surface 12, and a roughened region 53b above the smoothed region 53a. have.

このような発光素子５１の立体形状は、例えばエッチング処理により形成することができる。発光素子５１の立体形状、すなわちそれぞれの傾斜面を含む各側面５２を形成した後、他の各側面５３における下側の各滑面化領域５３aを滑面化し、各側面５２全体及び他の各側面５３における上側の各粗面化領域５３bを粗面化する。   Such a three-dimensional shape of the light emitting element 51 can be formed by, for example, an etching process. After forming the three-dimensional shape of the light emitting element 51, that is, each side surface 52 including each inclined surface, each lower side smoothened region 53 a on each other side surface 53 is smoothed, and each side surface 52 as a whole and each other side Each upper roughened region 53b on the side surface 53 is roughened.

このような発光素子５１においては、底面１２の縁に隣接する各側面５３の下側領域５３aが滑面であることから、これらの滑面化領域５３aでは毛細管現象が発生せず、銀ペーストの硬化用溶剤が発光素子５１の底面１２から各滑面化領域５３aを通じて流出することはない。このため、各側面５３では、銀ペーストの硬化が十分に促進され、ダイボンド強度が安定する。   In such a light emitting element 51, since the lower region 53a of each side surface 53 adjacent to the edge of the bottom surface 12 is a smooth surface, capillary action does not occur in these smoothed regions 53a, and silver paste The curing solvent does not flow out from the bottom surface 12 of the light emitting element 51 through each smoothed region 53a. For this reason, in each side surface 53, hardening of a silver paste is fully accelerated | stimulated and die-bonding strength is stabilized.

また、各側面５２では、側面全体が粗面化されていることから、毛細管現象により発光素子５１の底面１２の銀ペーストの硬化用溶剤が吸い上げられ、銀ペーストが十分に硬化するとはいえないものの、銀ペーストが各側面５２の傾斜面となっている下側領域５２aを部分的に覆うので、発光素子５１の固定強度を確保することができる。   Further, in each side surface 52, since the entire side surface is roughened, the silver paste curing solvent on the bottom surface 12 of the light emitting element 51 is sucked up by the capillary phenomenon, and it cannot be said that the silver paste is sufficiently cured. Since the silver paste partially covers the lower region 52a that is the inclined surface of each side surface 52, the fixing strength of the light emitting element 51 can be ensured.

尚、発光素子５１の底面１２には、図１(b)と同様の各電極１３を設けても、また図２に示すような底面１２全体を覆う電極１５を設けてもよい。   Each electrode 13 similar to that shown in FIG. 1B may be provided on the bottom surface 12 of the light emitting element 51, or an electrode 15 covering the entire bottom surface 12 as shown in FIG. 2 may be provided.

図７は、本発明の光結合型半導体装置の第６実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図７の発光素子６１を用いている点が異なる。   FIG. 7 is a view showing a light emitting element in the sixth embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9, except that the light emitting element 61 of FIG. 7 is used instead of the light emitting element 102 of FIG.

図７は、発光素子６１の側面を示している。この発光素子６１では、４つの側面６２にそれぞれの段差６３を形成している。また、各側面６２は、それらの側面全体が粗面化されている。   FIG. 7 shows a side surface of the light emitting element 61. In the light emitting element 61, the step 63 is formed on each of the four side surfaces 62. In addition, each side surface 62 is roughened on the entire side surface.

このような発光素子６１の立体形状は、例えばエッチング処理により形成することができる。発光素子６１の立体形状、すなわち各側面６２の段差６３を形成した後、各側面６２全体を粗面化する。   Such a three-dimensional shape of the light emitting element 61 can be formed by, for example, an etching process. After the three-dimensional shape of the light emitting element 61, that is, the step 63 of each side surface 62 is formed, the entire side surface 62 is roughened.

このような発光素子６１の各側面６２では、側面全体が粗面化されていることから、毛細管現象により発光素子６１の底面１２の銀ペーストの硬化用溶剤が吸い上げられ、銀ペーストが十分に硬化するとはいえないものの、銀ペーストの一部が各側面６２の段差６３に食い込むので、発光素子６１の固定強度を確保することができる。   In each side surface 62 of such a light emitting element 61, since the entire side surface is roughened, the silver paste curing solvent on the bottom surface 12 of the light emitting element 61 is sucked up by capillary action, and the silver paste is sufficiently cured. However, although a part of the silver paste bites into the step 63 of each side surface 62, the fixing strength of the light emitting element 61 can be secured.

尚、発光素子６１の底面１２には、図１(b)と同様の各電極１３を設けても、また図２に示すような底面１２全体を覆う電極１５を設けてもよい。   Each electrode 13 similar to that shown in FIG. 1B may be provided on the bottom surface 12 of the light emitting element 61, or an electrode 15 covering the entire bottom surface 12 as shown in FIG. 2 may be provided.

図８は、本発明の光結合型半導体装置の第７実施形態における発光素子を示す図である。本実施形態の光結合型半導体装置は、その構成が図９の装置と概ね同様であるが、図９の発光素子１０２の代わりに、図８の発光素子７１を用いている点が異なる。   FIG. 8 is a view showing a light emitting element in the seventh embodiment of the optically coupled semiconductor device of the present invention. The optically coupled semiconductor device of the present embodiment has the same configuration as that of the device of FIG. 9 except that the light emitting element 71 of FIG. 8 is used instead of the light emitting element 102 of FIG.

図８は、発光素子７１の側面を示している。この発光素子７１では、４つの側面７２に下側領域７２a及び上側領域７２bを設けて、下側領域７２aを底面１２に対して鋭角をなす傾斜面としている。また、各側面７２は、それらの側面全体が粗面化されている。   FIG. 8 shows a side surface of the light emitting element 71. In the light emitting element 71, a lower region 72 a and an upper region 72 b are provided on four side surfaces 72, and the lower region 72 a is an inclined surface that forms an acute angle with respect to the bottom surface 12. In addition, each side surface 72 is roughened on the entire side surface.

このような発光素子７１の立体形状は、例えばエッチング処理により形成することができる。発光素子７１の立体形状、すなわちそれぞれの傾斜面を含む各側面７２を形成した後、各側面７２全体を粗面化する。   Such a three-dimensional shape of the light emitting element 71 can be formed by, for example, an etching process. After forming the three-dimensional shape of the light emitting element 71, that is, the side surfaces 72 including the respective inclined surfaces, the entire side surfaces 72 are roughened.

このような発光素子７１の各側面７２では、側面全体が粗面化されていることから、毛細管現象により発光素子７１の底面１２の銀ペーストの硬化用溶剤が吸い上げられ、銀ペーストが十分に硬化するとはいえないものの、銀ペーストの一部が各側面７２の傾斜面となっている下側領域７２aを部分的に覆うので、発光素子７１の固定強度を確保することができる。   In each side surface 72 of such a light emitting element 71, since the entire side surface is roughened, the silver paste curing solvent on the bottom surface 12 of the light emitting element 71 is sucked up by capillary action, and the silver paste is sufficiently cured. However, although a part of the silver paste partially covers the lower region 72 a that is the inclined surface of each side surface 72, the fixing strength of the light emitting element 71 can be ensured.

尚、発光素子７１の底面１２には、図１(b)と同様の各電極１３を設けても、また図２に示すような底面１２全体を覆う電極１５を設けてもよい。   Each electrode 13 similar to that shown in FIG. 1B may be provided on the bottom surface 12 of the light emitting element 71, or an electrode 15 covering the entire bottom surface 12 as shown in FIG. 2 may be provided.

以上、添付図面を参照しながら本発明の好適な実施形態について説明したが、本発明は係る例に限定されないことは言うまでもない。当業者であれば、特許請求の範囲に記載された範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと解される。   As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. It is understood.

例えば、図９に示すような光結合型半導体装置を例示したが、他の構成の光結合型半導体装置にも本発明を適用することができる。   For example, an optically coupled semiconductor device as illustrated in FIG. 9 is illustrated, but the present invention can also be applied to an optically coupled semiconductor device having another configuration.

また、本発明は、光結合型半導体装置だけではなく、これを備える電子機器をも包含する。電子機器としては、電源、ＯＡ機器、家電製品、ＦＡ機器等がある。   Further, the present invention includes not only an optically coupled semiconductor device but also an electronic device including the same. Electronic devices include power supplies, OA devices, home appliances, FA devices, and the like.

(a)及び(b)は、本発明の光結合型半導体装置の第１実施形態における発光素子を示す側面図及び底面図である。(a) And (b) is the side view and bottom view which show the light emitting element in 1st Embodiment of the optical coupling type semiconductor device of this invention. 発光素子底面の電極の変形例を示す図である。It is a figure which shows the modification of the electrode of a light emitting element bottom face. (a)及び(b)は、本発明の光結合型半導体装置の第２実施形態における発光素子を示す側面図及び底面図である。(a) And (b) is the side view and bottom view which show the light emitting element in 2nd Embodiment of the optical coupling type semiconductor device of this invention. (a)及び(b)は、本発明の光結合型半導体装置の第３実施形態における発光素子を示す側面図及び底面図である。(a) And (b) is the side view and bottom view which show the light emitting element in 3rd Embodiment of the optical coupling type semiconductor device of this invention. (a)及び(b)は、本発明の光結合型半導体装置の第４実施形態における発光素子を示す側面図及び上面図である。(a) And (b) is the side view and top view which show the light emitting element in 4th Embodiment of the optical coupling type semiconductor device of this invention. (a)及び(b)は、本発明の光結合型半導体装置の第５実施形態における発光素子を示す側面図及び上面図である。(a) And (b) is the side view and top view which show the light emitting element in 5th Embodiment of the optical coupling type semiconductor device of this invention. 本発明の光結合型半導体装置の第６実施形態における発光素子を示す側面図である。It is a side view which shows the light emitting element in 6th Embodiment of the optical coupling type semiconductor device of this invention. 本発明の光結合型半導体装置の第７実施形態における発光素子を示す側面図である。It is a side view which shows the light emitting element in 7th Embodiment of the optical coupling type semiconductor device of this invention. 光結合型半導体装置を例示する断面図である。It is sectional drawing which illustrates an optical coupling type semiconductor device. 光結合型半導体装置の製造工程を例示するフローチャートである。3 is a flowchart illustrating a manufacturing process of an optically coupled semiconductor device.

符号の説明Explanation of symbols

１１、２１、３１、４１、５１、６１、７１ 発光素子
１２ 底面
１３、１５ 電極
１４、４２、４４、５２、５３、６２、７２ 側面
１４a、１４c、４４a、５３a 滑面化領域
１４b、４４b、５３b 粗面化領域
２２、４３、６３ 段差
５２a、５３a、７２a 下側領域 11, 21, 31, 41, 51, 61, 71 Light-emitting element 12 Bottom surface 13, 15 Electrodes 14, 42, 44, 52, 53, 62, 72 Side surfaces 14a, 14c, 44a, 53a Smooth surfaces 14b, 44b, 53b Roughened regions 22, 43, 63 Steps 52a, 53a, 72a Lower region

Claims (11)

入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、
前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる側面とを有し、前記底面の縁に隣接する前記側面の領域を滑面化し、この側面の滑面化された領域を少なくとも除く該発光素子表面の他の領域を粗面化したことを特徴とする光結合型半導体装置。 In an optically coupled semiconductor device comprising a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is die-bonded on a lead frame.
The light emitting element has a bottom surface facing the lead frame and a side surface rising from an edge of the bottom surface, and the side surface region adjacent to the edge of the bottom surface is smoothed, and the side surface is smoothed. 2. An optically coupled semiconductor device, wherein another region of the light emitting element surface excluding at least the region is roughened. 前記発光素子の側面は、滑面化された領域と、粗面化された領域とを含み、前記底面の縁と前記側面の粗面化された領域との間に前記側面の滑面化された領域を介在させたことを特徴とする請求項１に記載の光結合型半導体装置。   The side surface of the light emitting element includes a smoothed region and a roughened region, and the side surface is smoothed between an edge of the bottom surface and a roughened region of the side surface. The optically coupled semiconductor device according to claim 1, wherein a region is interposed. 前記発光素子の側面の滑面化された領域と粗面化された領域との間に、段差を設けたことを特徴とする請求項２に記載の光結合型半導体装置。   The optically coupled semiconductor device according to claim 2, wherein a step is provided between a smoothed region and a roughened region on a side surface of the light emitting element. 前記側面の滑面化された領域は、前記底面に対して鋭角をなす傾斜面となっていることを特徴とする請求項２に記載の光結合型半導体装置。   The optically coupled semiconductor device according to claim 2, wherein the smoothed region of the side surface is an inclined surface that forms an acute angle with respect to the bottom surface. 入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、
前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、前記各側面として滑面化側面及び粗面化側面を設け、
前記粗面化側面に段差を設けたことを特徴とする光結合型半導体装置。 In an optically coupled semiconductor device comprising a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is die-bonded on a lead frame.
The light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from an edge of the bottom surface, and provided with a smooth side surface and a roughened side surface as the side surfaces,
An optically coupled semiconductor device, wherein a step is provided on the roughened side surface. 入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、
前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる複数の側面とを有し、前記各側面として滑面化側面と粗面化側面を設け、
前記粗面化側面は、前記底面に対して鋭角をなす傾斜面を含むことを特徴とする光結合型半導体装置。 In an optically coupled semiconductor device comprising a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is die-bonded on a lead frame.
The light emitting element has a bottom surface facing the lead frame and a plurality of side surfaces rising from an edge of the bottom surface, and provided with a smooth side surface and a roughened side surface as the side surfaces,
The roughened side surface includes an inclined surface that forms an acute angle with respect to the bottom surface. 入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、
前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、
前記粗面化側面に段差を設けたことを特徴とする光結合型半導体装置。 In an optically coupled semiconductor device comprising a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is die-bonded on a lead frame.
The light emitting element has a bottom surface facing the lead frame, and a roughened side surface rising from an edge of the bottom surface,
An optically coupled semiconductor device, wherein a step is provided on the roughened side surface. 入力信号を入力して発光する発光素子と、発光素子の光を受光して出力信号を出力する受光素子とを備え、少なくとも発光素子をリードフレーム上にダイボンドした光結合型半導体装置において、
前記発光素子は、前記リードフレームに対向する底面と、この底面の縁から立ち上がる粗面化側面とを有し、
前記粗面化側面は、前記底面に対して鋭角をなす傾斜面を含むことを特徴とする光結合型半導体装置。 In an optically coupled semiconductor device comprising a light emitting element that emits light by inputting an input signal, and a light receiving element that receives light from the light emitting element and outputs an output signal, and at least the light emitting element is die-bonded on a lead frame.
The light emitting element has a bottom surface facing the lead frame, and a roughened side surface rising from an edge of the bottom surface,
The roughened side surface includes an inclined surface that forms an acute angle with respect to the bottom surface. 前記発光素子の底面に複数の電極を離間配置したことを特徴等する請求項１乃至８のいずれか一つに記載の光結合型半導体装置。   The optically coupled semiconductor device according to claim 1, wherein a plurality of electrodes are spaced apart from each other on a bottom surface of the light emitting element. 前記発光素子の底面全体を電極で覆ったことを特徴等する請求項１乃至８のいずれか一つに記載の光結合型半導体装置。   9. The optically coupled semiconductor device according to claim 1, wherein an entire bottom surface of the light emitting element is covered with an electrode. 請求項１乃至１０のいずれか一つに記載の光結合型半導体装置を備えることを特徴とする電子機器。   An electronic apparatus comprising the optically coupled semiconductor device according to claim 1.
JP2008257568A 2008-10-02 2008-10-02 Optical-coupling semiconductor device and electronic apparatus equipped with the same Pending JP2010087422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008257568A JP2010087422A (en) 2008-10-02 2008-10-02 Optical-coupling semiconductor device and electronic apparatus equipped with the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008257568A JP2010087422A (en) 2008-10-02 2008-10-02 Optical-coupling semiconductor device and electronic apparatus equipped with the same

Publications (1)

Publication Number Publication Date
JP2010087422A true JP2010087422A (en) 2010-04-15

Family

ID=42251055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008257568A Pending JP2010087422A (en) 2008-10-02 2008-10-02 Optical-coupling semiconductor device and electronic apparatus equipped with the same

Country Status (1)

Country Link
JP (1) JP2010087422A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279775A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device
JPS5279776A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device
JPS63244890A (en) * 1987-03-31 1988-10-12 Nec Corp Optical semiconductor device
JPH0878722A (en) * 1994-09-08 1996-03-22 Nec Corp Optical coupling device
JPH1093135A (en) * 1996-09-11 1998-04-10 Sanken Electric Co Ltd Semiconductor light-emitting element
JP2002124489A (en) * 2000-10-18 2002-04-26 Sharp Corp Method of manufacturing semiconductor light emitting device
JP2003110136A (en) * 2001-09-28 2003-04-11 Toyoda Gosei Co Ltd Light emitting element
JP2005302828A (en) * 2004-04-07 2005-10-27 Sharp Corp Optical coupling element and electronic apparatus using the same
JP2007042851A (en) * 2005-08-03 2007-02-15 Mitsubishi Chemicals Corp Light emitting diode and its manufacturing method
JP2008140926A (en) * 2006-11-30 2008-06-19 Shin Etsu Handotai Co Ltd Method of manufacturing light emitting element

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279775A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device
JPS5279776A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device
JPS63244890A (en) * 1987-03-31 1988-10-12 Nec Corp Optical semiconductor device
JPH0878722A (en) * 1994-09-08 1996-03-22 Nec Corp Optical coupling device
JPH1093135A (en) * 1996-09-11 1998-04-10 Sanken Electric Co Ltd Semiconductor light-emitting element
JP2002124489A (en) * 2000-10-18 2002-04-26 Sharp Corp Method of manufacturing semiconductor light emitting device
JP2003110136A (en) * 2001-09-28 2003-04-11 Toyoda Gosei Co Ltd Light emitting element
JP2005302828A (en) * 2004-04-07 2005-10-27 Sharp Corp Optical coupling element and electronic apparatus using the same
JP2007042851A (en) * 2005-08-03 2007-02-15 Mitsubishi Chemicals Corp Light emitting diode and its manufacturing method
JP2008140926A (en) * 2006-11-30 2008-06-19 Shin Etsu Handotai Co Ltd Method of manufacturing light emitting element

Similar Documents

Publication Publication Date Title
CN105895792B (en) Light emitting assembly
JP4965858B2 (en) LED device with lens
US20070052074A1 (en) Optical coupling element, method for producing the optical coupling element, and electronic device equipped with the optical coupling element
TWI531089B (en) Led package and method for manufacturing the same
EP2197052A2 (en) Light emitting diode package structure
JP2007206336A (en) Optical module and manufacturing method thereof
JP2015177052A (en) Optical coupling device
US20130015490A1 (en) Led and method for manufacturing the same
JP2007305736A (en) Manufacturing method of optical module
US8455274B2 (en) Method for manufacturing light emitting diode
JP2001144334A (en) Optical semiconductor device and forming method therefor
US7350988B2 (en) Optical module and method of manufacturing the same
JP2009111140A (en) Light-emitting device and method of manufacturing the same
JP2005116937A (en) Semiconductor light emitting device and manufacturing method thereof
JP2010087422A (en) Optical-coupling semiconductor device and electronic apparatus equipped with the same
JP2010171060A (en) Lead frame of resin-encapsulated device
KR20100108969A (en) Method for fabricating light emitting diode packang and light emitting diode package
TWI513055B (en) Light emitting diode package and method for manufacuring the same
KR101682067B1 (en) Semiconductor package with heat slug and leadframe bonded using ultrasonic welding
US10867894B2 (en) Semiconductor element including encapsulated lead frames
US20050029633A1 (en) Optical semiconductor device and method of manufacturing the same
JP7021970B2 (en) Manufacturing method of lead frame, lead frame with resin, lead frame with resin, and manufacturing method of semiconductor device
TWI521745B (en) Light emitting diode package and method for manufacuring the same
JP6329596B2 (en) Semiconductor device
KR20080089051A (en) Led package with interfacial debonding reduced

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120717

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120829

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20120829

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120925

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130205