JP2010067869A - Semiconductor laser element - Google Patents

Semiconductor laser element Download PDF

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JP2010067869A
JP2010067869A JP2008234229A JP2008234229A JP2010067869A JP 2010067869 A JP2010067869 A JP 2010067869A JP 2008234229 A JP2008234229 A JP 2008234229A JP 2008234229 A JP2008234229 A JP 2008234229A JP 2010067869 A JP2010067869 A JP 2010067869A
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insulating film
semiconductor laser
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Kenho Chin
顕鋒 陳
Susumu Monma
進 門馬
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Ricoh Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element high in stability, and miniaturizable while having an excellent heat radiation property. <P>SOLUTION: An insulating film covering a groove part of an air ridge structure end face light emission laser element includes 11a and 11b and has a step structure; film thickness H<SB>1</SB>of a thick part and film thickness H<SB>2</SB>of a thin part satisfy conditions of 0.1 μm≤H<SB>2</SB>≤0.7 μm and 0.1 μm≤H<SB>1</SB>-H<SB>2</SB>≤3 μm; and an electrode 12 is formed on the thick part. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、光通信、光情報処理などの技術分野において光源として用いられる半導体レーザ素子に関する。   The present invention relates to a semiconductor laser element used as a light source in technical fields such as optical communication and optical information processing.

近年、AlGaInP材料系の赤色半導体レーザ素子が、レーザプリンタ光源、高密度光ディスクピックアップ、ＰＯＦ通信の光源として非常に注目されている。更に、半導体レーザアレイ（半導体モノリシックレーザアレイ）は、高速レーザプリンタ、光ディスクピックアップ、光ファイバ通信の光源として優れた特長を持っている。１回の結晶成長で製造されるエアリッジ型の半導体レーザは、結晶成長工程が３回必要なリッジ埋め込み型半導体レーザに比べて製造工程が簡便なため、低コストで半導体レーザ素子を製造することができるというメリットがある。図５と図６は、それぞれ従来の１回の結晶成長工程で製造される半導体レーザ素子の断面図である。   In recent years, red semiconductor laser elements based on AlGaInP materials have attracted much attention as laser printer light sources, high-density optical disc pickups, and POF communication light sources. Furthermore, the semiconductor laser array (semiconductor monolithic laser array) has excellent features as a light source for high-speed laser printers, optical disk pickups, and optical fiber communications. An air ridge type semiconductor laser manufactured by one crystal growth has a simpler manufacturing process than a ridge embedded type semiconductor laser that requires three crystal growth processes, and therefore a semiconductor laser device can be manufactured at low cost. There is a merit that you can. 5 and 6 are cross-sectional views of a semiconductor laser device manufactured in a conventional single crystal growth process.

図５の半導体レーザ素子は、ｎ−GaAs基板５０２上に、ｎ−GaAsバッファ層５０４、ｎ−GaInP中間層506、ｎ−AlGaInPクラット層508、ノンドープMQW（多重量子井戸）活性層５１０、ｐ−AlGaInPクラッド層５１２、ｐ−GaInPエッチングストップ層５１４、ｐ−AlGaInPクラッド層５１６、ｐ−GaAsキャップ層５１８を備え、前記ｐ−GaAsキャップ層５１８と、ｐ−AlGaInPクラッド層５１６とに形成されたリッジ部５２８を有する。   5 includes an n-GaAs substrate 502, an n-GaAs buffer layer 504, an n-GaInP intermediate layer 506, an n-AlGaInP clat layer 508, an undoped MQW (multiple quantum well) active layer 510, p- A ridge formed on the p-GaAs cap layer 518 and the p-AlGaInP cladding layer 516 includes an AlGaInP cladding layer 512, a p-GaInP etching stop layer 514, a p-AlGaInP cladding layer 516, and a p-GaAs cap layer 518. Part 528.

このリッジ部５２８の両側に、幅が約２０μｍの溝５２９とダミーリッジ部５３０がある。前記リッジ部５２８の側面と、前記溝５２９の内側面と、前記ｐ−GaAsキャップ層518の側面とに、SiO2からなる誘電体膜５２０を形成する。前記誘電体膜５２０の表面と、リッジ部５２８のｐ−GaAsキャップ層５１８の表面に、ｐ側電極５２２が形成され、このｐ側電極５２２上に、約３μｍの厚みのｐ側Ａｕメッキ電極５２４が形成されている。このｐ側Ａｕメッキ電極５２４によって、レーザ発振で発生した熱を放出させ、また、半田でサブマウントに実装されるときの応力歪を緩和するようにしている。前記ｎ型GaAs基板５０２の下側面には、ｎ型電極５２６が形成されている。 On both sides of the ridge portion 528, there are a groove 529 having a width of about 20 μm and a dummy ridge portion 530. A dielectric film 520 made of SiO 2 is formed on the side surface of the ridge portion 528, the inner side surface of the groove 529, and the side surface of the p-GaAs cap layer 518. A p-side electrode 522 is formed on the surface of the dielectric film 520 and the surface of the p-GaAs cap layer 518 of the ridge 528, and a p-side Au plating electrode 524 having a thickness of about 3 μm is formed on the p-side electrode 522. Is formed. The p-side Au plating electrode 524 releases heat generated by laser oscillation and relieves stress strain when mounted on the submount with solder. An n-type electrode 526 is formed on the lower surface of the n-type GaAs substrate 502.

図６の半導体レーザ素子は、ｎ型GaAs基板６０２上に、ｎ型GaAsバッファ層６０４、ｎ型GaInP中間層６０６、ｎ−AlGaInPクラッド層６０８、ノンドープMQW活性層６１０と、第１上部クラット層としてｐ−AlGaInP層６１２と、第２上部クラット層としてのｐ−AlGaInPクラット層６１４と、ｐ−GaAsキャップ層６１８が形成されている。前記GaAs基板６０２の上部から前記ｐ−GaInPエッチングストップ層までの各層は、前記GaAs基板６０２の下部の幅よりも小さい幅の狭幅部６１７に形成されている。これにより、前記GaAs基板２の上部と下部の間に段部６０２ａが形成されている。また、前記ｐ−AlGaInPクラッド層614とｐ−GaAsキャップ層６１６は、前記幅部６１７の幅より小さい幅のリッジ部６１５に形成されている。前記GaAs基板６０２の段部の表面と、前記狭幅部６１７の表面と、前記リッジ部６１５の側面に、誘電体膜としてのSiO2膜６１８が形成されている。このSiO2膜の表面と前記GaAsキャップ層６１６の表面に、ｐ側電極層６２３が形成されている。 6 includes an n-type GaAs buffer layer 604, an n-type GaInP intermediate layer 606, an n-AlGaInP cladding layer 608, a non-doped MQW active layer 610, and a first upper clat layer. A p-AlGaInP layer 612, a p-AlGaInP clat layer 614 as a second upper clat layer, and a p-GaAs cap layer 618 are formed. Each layer from the upper part of the GaAs substrate 602 to the p-GaInP etching stop layer is formed in a narrow part 617 having a width smaller than that of the lower part of the GaAs substrate 602. As a result, a step 602 a is formed between the upper and lower portions of the GaAs substrate 2. The p-AlGaInP cladding layer 614 and the p-GaAs cap layer 616 are formed in the ridge portion 615 having a width smaller than the width of the width portion 617. A SiO 2 film 618 as a dielectric film is formed on the surface of the step portion of the GaAs substrate 602, the surface of the narrow width portion 617, and the side surface of the ridge portion 615. A p-side electrode layer 623 is formed on the surface of the SiO 2 film and the surface of the GaAs cap layer 616.

特開２００７−１８９０７５号公報JP 2007-189075 A

しかしながら、前記の従来の半導体レーザ素子は、寸法の低減が困難である。詳しくは、前記図５のような従来の半導体レーザ素子の幅を減少すると、溝５２９幅の低減に従って両側のダミーリッジ部での光の吸収が大きくなるので、レーザ素子の発光効率が低下するという不都合を招く。図６のような従来の半導体レーザ素子において、寸法の低減より、高次モードの影響が著しくて、レーザ出力の変動が大きくなってしまう。   However, it is difficult to reduce the size of the conventional semiconductor laser element. Specifically, when the width of the conventional semiconductor laser device as shown in FIG. 5 is reduced, light absorption at the dummy ridges on both sides increases as the width of the groove 529 is reduced, so that the light emission efficiency of the laser device is reduced. Inconvenience. In the conventional semiconductor laser device as shown in FIG. 6, the influence of the higher-order mode is more significant than the reduction in size, and the fluctuation of the laser output becomes large.

本発明の課題は、安定性が高い、良好な放熱性を有しつつ小型化を図ることができる半導体レーザ素子を提供することにある。   An object of the present invention is to provide a semiconductor laser device that is highly stable and has good heat dissipation and can be miniaturized.

前記課題を解決するため、本発明の第１の手段は、第１導電型半導体基板上に形成された第１導電型半導体層と、前記第１導電型半導体層の上に形成された量子井戸構造を含む活性層と、前記活性層の上に形成されたリッジ部とリッジ部の両側のストライプ溝を有する第２導電型半導体層とを備え、前記リッジ部の側面とストライプ溝の表面を覆う絶縁膜を設け、前記ストライプ溝の表面を覆う絶縁膜の厚みに段差を有し、
少なくとも前記ストライプ溝上の一部の絶縁膜が溝の端部の絶縁膜より厚く、前記絶縁膜を覆うと共に、前記リッジ部表面に電気的に接続される電極層を、前記溝部を覆う絶縁膜の厚い部分上に形成することを特徴とするものである。 In order to solve the above problems, a first means of the present invention includes a first conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate, and a quantum well formed on the first conductivity type semiconductor layer. An active layer including a structure; a ridge portion formed on the active layer; and a second conductive semiconductor layer having stripe grooves on both sides of the ridge portion; and covering a side surface of the ridge portion and the surface of the stripe groove. Providing an insulating film, and having a step in the thickness of the insulating film covering the surface of the stripe groove;
At least a part of the insulating film on the stripe groove is thicker than the insulating film at the end of the groove and covers the insulating film, and an electrode layer electrically connected to the surface of the ridge part is formed on the insulating film covering the groove part. It is characterized by being formed on a thick part.

本発明の第２の手段は前記第１の手段において、前記溝部を覆う、厚み段差のある絶縁膜の一番厚い部分の厚みをＨ1とし、一番薄い部分の厚みをＨ２として、Ｈ１とＨ２が、
０．１μｍ≦Ｈ２≦０．７μｍ
０．１μｍ≦Ｈ１−Ｈ２≦３μｍ
の条件を満足することを特徴とするものである。 According to a second means of the present invention, in the first means, the thickness of the thickest part of the insulating film having a thickness difference covering the groove is H 1, and the thickness of the thinnest part is H 2 . 1 and H 2
0.1 μm ≦ H 2 ≦ 0.7 μm
0.1 μm ≦ H 1 −H 2 ≦ 3 μm
It satisfies the following conditions.

本発明の第３の手段は前記第１又は第２の手段において、前記溝部を覆う厚み段差のある絶縁膜が１種類以上材料で構成されることを特徴とするものである。   According to a third means of the present invention, in the first or second means, the insulating film having a thickness step covering the groove is made of one or more materials.

以上のように、本発明の半導体レーザ素子は、溝部の上に厚み段差がある絶縁膜によって、ボンディングによって生じる応力が活性層に与える影響を低減できると共に、活性層でレーザ光の生成に伴って発生した熱をこの絶縁膜層、或はこの絶縁膜と電極層を介して外部に放出させることにより、素子の放熱性を改善させることができる。従って、従来の素子より安定性が高い、製造コストが低い、良好な放熱性を有する小型化された半導体レーザ素子を実現することができる。   As described above, the semiconductor laser device according to the present invention can reduce the influence of the stress generated by bonding on the active layer by the insulating film having a thickness step on the groove portion, and with generation of laser light in the active layer. By releasing the generated heat to the outside through this insulating film layer or this insulating film and electrode layer, the heat dissipation of the element can be improved. Accordingly, it is possible to realize a miniaturized semiconductor laser device having higher stability, lower manufacturing cost, and good heat dissipation than conventional devices.

本発明を実施するための最良の形態を以下実施例により説明する。   The best mode for carrying out the present invention will be described below with reference to examples.

半導体基板１は、例えば、ｎ型のGaAs基板である。図２（ａ）に示すように、まず、ｎ−GaAs半導体基板１上に、n−AlGaInPクラッド層２（ｎ＝３×１０１７ｃｍ−３、厚さ：２μｍ）、活性層３（例えば、５ｎｍ厚、＋０．７％圧縮歪みのGaInPウェルと４ｎｍ厚のAlGaInPバリアを交互に積層してウェルを３層含んだ構成としたもの）、ｐ−AlGaInP第１クラッド層４（ｐ＝１〜１０×１０１７ｃｍ−３、厚さ：０．１５〜０．４５μｍ）、p−GaInPエッチングストップ層５(厚さ：１０ｎｍ)、ｐ−AlGaInP第２クラッド層６（ｐ＝５×１０１７ｃｍ−３、厚さ：１．０〜１．５μm）とｐ−GaAsコンタクト層７（ｐ＝０．２〜１×１０１９ｃｍ−３、厚さ：０．２〜０．７μm）が順次にMOVPE(Metal-Organic Vapor Phase Epitaxy)法により結晶成長させる。 The semiconductor substrate 1 is, for example, an n-type GaAs substrate. As shown in FIG. 2A, first, an n-AlGaInP clad layer 2 (n = 3 × 10 17 cm −3 , thickness: 2 μm), an active layer 3 (for example, on the n-GaAs semiconductor substrate 1) 5 nm thick, + 0.7% compressive strain GaInP wells and 4 nm thick AlGaInP barriers are alternately stacked to have three wells), p-AlGaInP first cladding layer 4 (p = 1-10) × 10 17 cm −3 , thickness: 0.15 to 0.45 μm), p-GaInP etching stop layer 5 (thickness: 10 nm), p-AlGaInP second cladding layer 6 (p = 5 × 10 17 cm − 3 and thickness: 1.0 to 1.5 μm) and p-GaAs contact layer 7 (p = 0.2 to 1 × 10 19 cm −3 , thickness: 0.2 to 0.7 μm) sequentially Crystals are grown by the (Metal-Organic Vapor Phase Epitaxy) method.

そして、ｐ−GaAsコンタクト層７上に、周期が３０μｍのストライプ状レジストパターンを形成して、エッチングストップ層５までの各層をエッチング加工する。このようにして、図２（ｂ）に示す半導体レーザアレイ素子のリッジストライプ構造が形成される。このとき、半導体レーザアレイ素子のリッジ部９の幅Wは約１．５〜３μｍである。   Then, a striped resist pattern with a period of 30 μm is formed on the p-GaAs contact layer 7 and the layers up to the etching stop layer 5 are etched. In this way, the ridge stripe structure of the semiconductor laser array element shown in FIG. 2B is formed. At this time, the width W of the ridge portion 9 of the semiconductor laser array element is about 1.5 to 3 μm.

次に、図２（ｃ）に示すように、エッチングしたストライプの溝部１0の中間部に厚みＴ０．１〜３μmのSiO2膜１１aを形成させる。このSiO2膜１１ａのリッジ部９幅方向での距離（幅Ｗ１）は０．１〜１２μｍである。 Next, as shown in FIG. 2C, an SiO 2 film 11a having a thickness of T1 to 3 μm is formed in the middle portion of the groove portion 10 of the etched stripe. The distance (width W1) in the width direction of the ridge portion 9 of the SiO 2 film 11a is 0.1 to 12 μm.

次に、図２（ｄ）に示すように、ＣＶＤ蒸着で、厚みが０．１〜０．７μｍのSiO2膜１１ｂをリッジ部の側面と溝と、SiO2膜１１ａの一部の表面を覆うように形成させる。 Next, as shown in FIG. 2 (d), the SiO 2 film 11b having a thickness of 0.1 to 0.7 μm is formed by CVD deposition on the side surfaces and grooves of the ridge portion and a part of the surface of the SiO 2 film 11a. Form to cover.

続いて、図２（ｅ）に示すように、SiO2膜１１ｂの表面と、コンタクト層７の表面に、ｐ側電極１２が形成されている。このｐ側電極１２の厚みは３μmで、電極１２の端部は絶縁膜SiO2膜１１ａとSiO2膜１１ｂが重なった厚い部分上に形成する。こうすると、ジャンクションダウンで組み立てる構造する場合、ボンディングによって電極端部で生じる応力が結晶に影響を抑える。 Subsequently, as shown in FIG. 2E, the p-side electrode 12 is formed on the surface of the SiO 2 film 11 b and the surface of the contact layer 7. The thickness of the p-side electrode 12 is 3 μm, and the end of the electrode 12 is formed on a thick portion where the insulating film SiO 2 film 11a and the SiO 2 film 11b overlap. In this case, when the structure is assembled by junction-down, the stress generated at the electrode end by bonding suppresses the influence on the crystal.

最後に基板１の裏面部分を、研磨やエッチングによって薄くする。続いて、基板１の裏面に、ｎ側電極１３を形成する。   Finally, the back surface portion of the substrate 1 is thinned by polishing or etching. Subsequently, the n-side electrode 13 is formed on the back surface of the substrate 1.

本実例形態では、絶縁膜１１ａと１１ｂはSiO２で形成するが、例えばSiNなどの他の放熱性がよい材料を用いてもよい。 In this example embodiment, the insulating film 11a and 11b are formed in the SiO 2, may be used other heat dissipation is good material such as SiN.

以上の実施例ではAlGaInP系半導体レーザアレイ素子について示したが、AlGaAs系やInGaAsP系などIII-V族、III-N系化合物材料よりなる半導体レーザアレイ素子についても適用でき、同様の効果を得ることができる。   Although the AlGaInP semiconductor laser array element has been described in the above embodiments, it can be applied to semiconductor laser array elements made of III-V and III-N compound materials such as AlGaAs and InGaAsP, and the same effect can be obtained. Can do.

半導体レーザアレイ素子の製造プロセスは図２に示すのと同様である。但し、図３に示すように電極１２は絶縁膜１1ａと接触する構造である。また、溝部の絶縁膜１１ａは放熱性がよいSixNyなどの材料からなる。この構造によって活性層３でレーザ光の生成に伴って発生した熱が絶縁膜１１ａと電極層１２を介して外部に放出できる。 The manufacturing process of the semiconductor laser array element is the same as that shown in FIG. However, as shown in FIG. 3, the electrode 12 has a structure in contact with the insulating film 11a. The insulating film 11a in the trench is made of a material such as Si x N y that has good heat dissipation. With this structure, heat generated by the generation of laser light in the active layer 3 can be released to the outside through the insulating film 11 a and the electrode layer 12.

以上の実施例ではAlGaInP系半導体レーザアレイ素子について示したが、AlGaAs系やInGaAsP系などIII-V族、III-N系化合物材料よりなる半導体レーザアレイ素子についても適用でき、同様の効果を得ることができる。   Although the AlGaInP semiconductor laser array element has been described in the above embodiments, it can be applied to semiconductor laser array elements made of III-V and III-N compound materials such as AlGaAs and InGaAsP, and the same effect can be obtained. Can do.

半導体レーザアレイ素子の製造プロセスは図２に示すのと同様である。但し、図４に示すように絶縁膜１１ｂは１１aを完全に閉じ込められている。   The manufacturing process of the semiconductor laser array element is the same as that shown in FIG. However, as shown in FIG. 4, the insulating film 11b completely confines 11a.

以上の実施例ではAlGaInP系半導体レーザアレイ素子について示したが、AlGaAs系やInGaAsP系などIII-V族、III-N系化合物材料よりなる半導体レーザアレイ素子についても適用でき、同様の効果を得ることができる。   Although the AlGaInP semiconductor laser array element has been described in the above embodiments, it can be applied to semiconductor laser array elements made of III-V and III-N compound materials such as AlGaAs and InGaAsP, and the same effect can be obtained. Can do.

前記実施例１から３において、溝部を覆う絶縁膜の一番厚い部分の厚みをＨ1とし、一番薄い部分の厚みをH２として、Ｈ１とＨ２が、
０．１μｍ≦Ｈ２≦０．７μｍ
０．１μｍ≦Ｈ１−Ｈ2≦３μｍ
の条件を満足することで、絶縁膜は良好な均一性が得られると共に、電極と半導体部分の接触を防止しつつ活性層でレーザ光の生成に伴って発生した熱がこの絶縁膜と電極層１２を介して外部に放出できる。前記リッジ部の側面と溝部の両端を覆う絶縁膜の厚みは０．１μｍ〜０．７μｍであるとよい。 In Examples 1 to 3, the thickness of the thickest part of the insulating film covering the groove is H 1 , the thickness of the thinnest part is H 2 , and H 1 and H 2 are
0.1 μm ≦ H 2 ≦ 0.7 μm
0.1 μm ≦ H 1 −H 2 ≦ 3 μm
By satisfying the above conditions, the insulating film has good uniformity, and heat generated by generation of laser light in the active layer while preventing the contact between the electrode and the semiconductor portion is generated by the insulating film and the electrode layer. 12 can be discharged to the outside. The insulating film covering the side surface of the ridge portion and both ends of the groove portion may be 0.1 μm to 0.7 μm.

前記溝部を覆う絶縁膜の段差が０．１μｍ〜３μｍであるから、熱膨張係数の異なることによって電極が活性層３に影響を与えることは避けることができて、且つジャンクションダウンで組み立てされる半導体レーザアレイ素子の機械的な安定性がよい。   Since the step of the insulating film covering the groove is 0.1 μm to 3 μm, it is possible to avoid the electrode from affecting the active layer 3 due to the difference in thermal expansion coefficient, and the semiconductor assembled by junction down The mechanical stability of the laser array element is good.

本発明の実施例１に係る半導体レーザ素子の断面図である。It is sectional drawing of the semiconductor laser element which concerns on Example 1 of this invention. 本発明の実施例１に係る半導体レーザ素子の製造工程を示す図である。It is a figure which shows the manufacturing process of the semiconductor laser element which concerns on Example 1 of this invention. 本発明の実施例２に係る半導体レーザ素子の断面図である。It is sectional drawing of the semiconductor laser element which concerns on Example 2 of this invention. 本発明の実施例３に係る半導体レーザ素子の断面図である。It is sectional drawing of the semiconductor laser element which concerns on Example 3 of this invention. 従来の半導体レーザ素子の断面図である。It is sectional drawing of the conventional semiconductor laser element. 従来の他の半導体レーザ素子の断面図である。It is sectional drawing of the other conventional semiconductor laser element.

符号の説明Explanation of symbols

１…ｎ−GaAs基板、２…ｎ−AlGaInPクラッド層、３…活性層、４…ｐ−AlGaInP第1クラッド層、５…ｐ−GaInPエッチングストップ層、６…ｐ−AlGaInP第２クラッド層、７…ｐ−GaAsコンタクト層、９…リッジ部、１０…ストライブ溝部、１１ａ…絶縁膜、１１ｂ…絶縁膜、１２…ｐ型電極、１３…ｎ型電極。   DESCRIPTION OF SYMBOLS 1 ... n-GaAs substrate, 2 ... n-AlGaInP clad layer, 3 ... Active layer, 4 ... p-AlGaInP 1st clad layer, 5 ... p-GaInP etching stop layer, 6 ... p-AlGaInP 2nd clad layer, 7 ... P-GaAs contact layer, 9. Ridge portion, 10... Strip groove portion, 11 a... Insulating film, 11 b.

Claims (3)

第１導電型半導体基板上に形成された第１導電型半導体層と、前記第１導電型半導体層の上に形成された量子井戸構造を含む活性層と、前記活性層の上に形成されたリッジ部とリッジ部の両側のストライプ溝を有する第２導電型半導体層とを備え、前記リッジ部の側面とストライプ溝の表面を覆う絶縁膜を設け、前記ストライプ溝の表面を覆う絶縁膜の厚みに段差を有し、少なくとも前記ストライプ溝上の一部の絶縁膜が溝の端部の絶縁膜より厚く、前記絶縁膜を覆うと共に、前記リッジ部表面に電気的に接続される電極層を、前記溝部を覆う絶縁膜の厚い部分上に形成することを特徴とする半導体レーザ素子。   A first conductive semiconductor layer formed on the first conductive semiconductor substrate; an active layer including a quantum well structure formed on the first conductive semiconductor layer; and an active layer formed on the active layer. A ridge portion and a second conductive semiconductor layer having stripe grooves on both sides of the ridge portion, an insulating film covering the side surface of the ridge portion and the surface of the stripe groove is provided, and the thickness of the insulating film covering the surface of the stripe groove An electrode layer that has a step, and at least a portion of the insulating film on the stripe groove is thicker than the insulating film at the end of the groove, covers the insulating film, and is electrically connected to the surface of the ridge portion, A semiconductor laser device, wherein the semiconductor laser device is formed on a thick portion of an insulating film covering the groove. 請求項1に記載の半導体レーザ素子において、前記溝部を覆う、厚み段差のある絶縁膜の一番厚い部分の厚みをH1とし、一番薄い部分の厚みをH２として、H１とH２が、
０．１μｍ≦Ｈ2≦０．７μｍ
０．１μｍ≦Ｈ１−Ｈ2≦３μｍ
の条件を満足することを特徴とする半導体レーザ素子。 In the semiconductor laser device according to claim 1, wherein the cover groove, the thickness of the thickest portion of a thick stepped insulating film and H 1, the thickness of the thinnest portion as H 2, H 1 and H 2 But,
0.1 μm ≦ H 2 ≦ 0.7 μm
0.1 μm ≦ H 1 −H 2 ≦ 3 μm
A semiconductor laser device satisfying the following conditions: 請求項１又は２に記載の半導体レーザ素子において、前記溝部を覆う厚み段差のある絶縁膜が１種類以上材料で構成されることを特徴とする半導体レーザ素子。   3. The semiconductor laser device according to claim 1, wherein an insulating film having a thickness step covering the groove is made of one or more materials.
JP2008234229A 2008-09-12 2008-09-12 Semiconductor laser element Pending JP2010067869A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565153A (en) * 2016-08-25 2019-04-02 索尼公司 Semiconductor laser, electronic equipment and the method for driving semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565153A (en) * 2016-08-25 2019-04-02 索尼公司 Semiconductor laser, electronic equipment and the method for driving semiconductor laser

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