JP2010040557A - 固体撮像装置とその製造方法 - Google Patents
固体撮像装置とその製造方法 Download PDFInfo
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- JP2010040557A JP2010040557A JP2008198274A JP2008198274A JP2010040557A JP 2010040557 A JP2010040557 A JP 2010040557A JP 2008198274 A JP2008198274 A JP 2008198274A JP 2008198274 A JP2008198274 A JP 2008198274A JP 2010040557 A JP2010040557 A JP 2010040557A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000007787 solid Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000009825 accumulation Methods 0.000 claims abstract description 13
- 238000003860 storage Methods 0.000 claims description 38
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 70
- 238000000034 method Methods 0.000 description 22
- 239000012535 impurity Substances 0.000 description 21
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】第1導電型の電荷蓄積領域12は、半導体基板11中に埋め込まれている。第1導電型の電荷転送先拡散層22は、半導体基板11の表面に形成されている。転送ゲート電極21は、電荷蓄積領域12上に形成され、電荷蓄積領域12から電荷転送先拡散層22へ電荷を転送する。
【選択図】 図1
Description
図7〜図13は、本発明の第2の実施形態を示している。第2の実施形態において、第1の実施形態と同一部分には同一符号を付し、異なる部分について説明する。
図7は、SOI基板30を示している。SOI基板30は、半導体基板31、BOX(Buried Oxide)層32、SOI(Silicon On Insulator)層33により構成されている。SOI層33はP型結晶シリコンであり、その不純物濃度は、例えば1×1018〜1×1020cm−3程度である。
図15は、第1、第2の実施形態の変形例を示しており、第1、第2の実施形態と同一部分には同一符号を付している。
Claims (5)
- 半導体基板と、
前記半導体基板内に埋め込まれた第1導電型の電荷蓄積領域と、
前記半導体基板の表面に形成された第1導電型の拡散層と、
前記電荷蓄積領域上に形成され、前記電荷蓄積領域から前記拡散層へ電荷を転送するための転送ゲート電極と
を具備することを特徴とする固体撮像装置。 - 前記半導体基板内に形成され、底部が前記電荷蓄積領域に達し、内部に前記転送ゲート電極が形成されるトレンチをさらに具備することを特徴とする請求項1記載の固体撮像装置。
- 前記電荷蓄積領域と前記縦型転送ゲートの間に第2導電型のシールド層を具備することを特徴とする請求項1記載の固体撮像装置。
- 前記第1導電型の電荷蓄積領域は前記転送ゲート電極近傍の濃度が他の領域より高いことを特徴とする請求項1記載の固体撮像装置。
- 表面に第1導電型の半導体層を有する半導体基板に第2導電型のウェル領域を形成し、
前記第1導電型の半導体層上の前記第2導電型のウェル領域内にトレンチを形成し、
前記トレンチ内壁にゲート絶縁膜を形成し、
前記トレンチ内部をゲート電極材料で埋め込み、
前記第2導電型のウェル領域表面に第1導電型の拡散層を形成することを特徴とする固体撮像装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008198274A JP5231890B2 (ja) | 2008-07-31 | 2008-07-31 | 固体撮像装置とその製造方法 |
TW098122429A TWI395326B (zh) | 2008-07-31 | 2009-07-02 | 固態攝影裝置及其製造方法 |
US12/509,810 US8310003B2 (en) | 2008-07-31 | 2009-07-27 | Solid-state imaging device with vertical gate electrode and method of manufacturing the same |
CN2009101655391A CN101640214B (zh) | 2008-07-31 | 2009-07-29 | 固体成像装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008198274A JP5231890B2 (ja) | 2008-07-31 | 2008-07-31 | 固体撮像装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010040557A true JP2010040557A (ja) | 2010-02-18 |
JP5231890B2 JP5231890B2 (ja) | 2013-07-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008198274A Expired - Fee Related JP5231890B2 (ja) | 2008-07-31 | 2008-07-31 | 固体撮像装置とその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8310003B2 (ja) |
JP (1) | JP5231890B2 (ja) |
CN (1) | CN101640214B (ja) |
TW (1) | TWI395326B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013118646A1 (ja) * | 2012-02-10 | 2013-08-15 | ソニー株式会社 | 撮像素子、製造装置および方法、並びに、撮像装置 |
US9041071B2 (en) | 2012-02-27 | 2015-05-26 | Samsung Electronics Co., Ltd. | Unit pixel of image sensor and image sensor including the same |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9020009B2 (en) * | 2009-05-11 | 2015-04-28 | Qualcomm Incorporated | Inserted pilot construction for an echo cancellation repeater |
EP2315251A1 (fr) * | 2009-10-22 | 2011-04-27 | STMicroelectronics (Crolles 2) SAS | Capteur d'image à grille de transfert verticale et son procédé de fabrication |
JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
JP2015053296A (ja) * | 2013-01-28 | 2015-03-19 | ソニー株式会社 | 半導体素子およびこれを備えた半導体装置 |
US8773562B1 (en) | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
JP2014199898A (ja) * | 2013-03-11 | 2014-10-23 | ソニー株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
KR102471593B1 (ko) * | 2015-06-09 | 2022-11-29 | 에스케이하이닉스 주식회사 | 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법 |
KR102456530B1 (ko) | 2015-09-09 | 2022-10-20 | 삼성전자주식회사 | 이미지 센서 |
CN106981495B (zh) * | 2016-01-15 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制作方法 |
US10147829B2 (en) * | 2016-09-23 | 2018-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric sidewall structure for quality improvement in Ge and SiGe devices |
US10490596B2 (en) * | 2016-11-30 | 2019-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for fabricating an image sensor |
US11355537B2 (en) * | 2019-10-16 | 2022-06-07 | Omnivision Technologies, Inc. | Vertical gate structure and layout in a CMOS image sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08255888A (ja) * | 1995-03-16 | 1996-10-01 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JP2005223084A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 固体撮像装置 |
JP2005294701A (ja) * | 2004-04-02 | 2005-10-20 | Sharp Corp | 固体撮像素子およびその製造方法 |
JP2007294531A (ja) * | 2006-04-21 | 2007-11-08 | Nikon Corp | 固体撮像装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
TW497236B (en) * | 2001-08-27 | 2002-08-01 | Chipmos Technologies Inc | A soc packaging process |
KR100630704B1 (ko) * | 2004-10-20 | 2006-10-02 | 삼성전자주식회사 | 비평면 구조의 트랜지스터를 구비한 cmos 이미지 센서및 그 제조 방법 |
US7217968B2 (en) * | 2004-12-15 | 2007-05-15 | International Business Machines Corporation | Recessed gate for an image sensor |
CN100463205C (zh) | 2005-09-05 | 2009-02-18 | 株式会社东芝 | 固体摄像装置及其制造方法 |
JP2007096271A (ja) | 2005-09-05 | 2007-04-12 | Toshiba Corp | 固体撮像装置及びその製造方法 |
-
2008
- 2008-07-31 JP JP2008198274A patent/JP5231890B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-02 TW TW098122429A patent/TWI395326B/zh not_active IP Right Cessation
- 2009-07-27 US US12/509,810 patent/US8310003B2/en not_active Expired - Fee Related
- 2009-07-29 CN CN2009101655391A patent/CN101640214B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08255888A (ja) * | 1995-03-16 | 1996-10-01 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JP2005223084A (ja) * | 2004-02-04 | 2005-08-18 | Sony Corp | 固体撮像装置 |
JP2005294701A (ja) * | 2004-04-02 | 2005-10-20 | Sharp Corp | 固体撮像素子およびその製造方法 |
JP2007294531A (ja) * | 2006-04-21 | 2007-11-08 | Nikon Corp | 固体撮像装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013118646A1 (ja) * | 2012-02-10 | 2013-08-15 | ソニー株式会社 | 撮像素子、製造装置および方法、並びに、撮像装置 |
US9041071B2 (en) | 2012-02-27 | 2015-05-26 | Samsung Electronics Co., Ltd. | Unit pixel of image sensor and image sensor including the same |
Also Published As
Publication number | Publication date |
---|---|
CN101640214B (zh) | 2011-08-10 |
TW201005932A (en) | 2010-02-01 |
US8310003B2 (en) | 2012-11-13 |
US20100025738A1 (en) | 2010-02-04 |
JP5231890B2 (ja) | 2013-07-10 |
TWI395326B (zh) | 2013-05-01 |
CN101640214A (zh) | 2010-02-03 |
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