JP2009543376A5 - - Google Patents
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- JP2009543376A5 JP2009543376A5 JP2009519476A JP2009519476A JP2009543376A5 JP 2009543376 A5 JP2009543376 A5 JP 2009543376A5 JP 2009519476 A JP2009519476 A JP 2009519476A JP 2009519476 A JP2009519476 A JP 2009519476A JP 2009543376 A5 JP2009543376 A5 JP 2009543376A5
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- 239000004065 semiconductor Substances 0.000 claims 59
- 239000000463 material Substances 0.000 claims 11
- 239000011248 coating agent Substances 0.000 claims 8
- 238000000576 coating method Methods 0.000 claims 8
- 238000007906 compression Methods 0.000 claims 7
- 230000003287 optical Effects 0.000 claims 7
- 229910052782 aluminium Chemical class 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical class [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 6
- 239000004033 plastic Substances 0.000 claims 6
- 229920003023 plastic Polymers 0.000 claims 6
- 229910000831 Steel Inorganic materials 0.000 claims 5
- 239000010959 steel Chemical class 0.000 claims 5
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 4
- 239000012141 concentrate Substances 0.000 claims 4
- 239000003989 dielectric material Substances 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 230000001629 suppression Effects 0.000 claims 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N Fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 2
- 239000000969 carrier Substances 0.000 claims 2
- 239000000919 ceramic Chemical class 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 239000000835 fiber Substances 0.000 claims 2
- 239000008187 granular material Substances 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- -1 mesh Substances 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 238000001228 spectrum Methods 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N Anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 1
- 229910001369 Brass Inorganic materials 0.000 claims 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N Cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L Copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 240000002329 Inga feuillei Species 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229920001721 Polyimide Polymers 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N Tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229940091251 Zinc Supplements Drugs 0.000 claims 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L Zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000001464 adherent Effects 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000005275 alloying Methods 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229920003235 aromatic polyamide Polymers 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010951 brass Substances 0.000 claims 1
- 238000005219 brazing Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000006229 carbon black Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000010073 coating (rubber) Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910000365 copper sulfate Inorganic materials 0.000 claims 1
- 230000001066 destructive Effects 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229920001971 elastomer Polymers 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 239000000446 fuel Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 230000005484 gravity Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000011133 lead Substances 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- ITMSSWCUCPDVED-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane;oxo(oxoalumanyloxy)yttrium;oxo(oxoyttriooxy)yttrium Chemical compound O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Y]=O.O=[Y]O[Y]=O ITMSSWCUCPDVED-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229920000728 polyester Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 230000001737 promoting Effects 0.000 claims 1
- 230000003252 repetitive Effects 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229920002379 silicone rubber Polymers 0.000 claims 1
- 239000004945 silicone rubber Substances 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000004642 transportation engineering Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium(0) Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 229960001763 zinc sulfate Drugs 0.000 claims 1
- 229910000368 zinc sulfate Inorganic materials 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Claims (26)
繰返しの成形された顆粒の半導体物体、該半導体物体を保持するためのスロット、穴、複数スロット又は複数穴、該半導体物体又は複数物体への光導管、及び該スロット又は穴の一部である少なくとも2つの電極であって弾性圧縮を伴って各半導体物体に接触する電極、
を含んでなる装置。 A direct or indirect photon converter or generator, and
A semiconductor object of repetitively shaped granules, a slot for holding the semiconductor object, a hole, a plurality of slots or holes, a light conduit to the semiconductor object or objects, and at least a part of the slot or hole Two electrodes that contact each semiconductor object with elastic compression;
A device comprising:
各スロット又は穴は、ある形状と構造を有することで、電気接触をして光ダイオードを形成する各半導体物体の2つの異なる領域に2つの電極の弾性圧縮又は弾性抑制をもたらし、
光透過性誘電性カバーを通って屈折、回折、散乱、干渉、ケイ光発光、又は反射した、及び/又は該電極から反射、屈折、散乱、回折、干渉、又はケイ光発光した光を濃縮する成形された光透過性誘電性カバーをさらに備える、請求項1に記載の装置。 Each molded semiconductor object is electrically connected by using each slot or hole with two or more electrodes as part of the hole or slot;
Each slot or hole has a shape and structure to provide elastic compression or suppression of the two electrodes in two different regions of each semiconductor object that make electrical contact to form a photodiode,
Concentrates light that has been refracted, diffracted, scattered, interfered, fluorescent, or reflected and / or reflected, refracted, scattered, diffracted, interfered, or fluorescently emitted from the electrode through the light transmissive dielectric cover. The apparatus of claim 1, further comprising a molded light transmissive dielectric cover.
各スロット又は穴は、ある形状と構造を有することで、電気接触をして光ダイオードを形成する各半導体物体の2つの異なる領域に少なくとも2つの電極の弾性圧縮又は弾性抑制をもたらし、さらに、光透過性誘電性カバーを通って屈折、回折、散乱、干渉、ケイ光発光、又は反射した、及び/又は該電極から反射、屈折、散乱、回折、干渉、又はケイ光発光した光を濃縮する成形された光透過性誘電性カバー、該電極と外側伸縮性カバーの間の伸縮性誘電性材料、及び該光透過性誘電性カバーと該半導体物体及び/又は該外側伸縮性カバーの間の光透過性誘電性材料を備え、
外側と該半導体との界面の該光導管が、相殺的干渉コーティング又は屈折率変化によって光反射を低減する表面処理を有し、
各成形された半導体物体が、該半導体物体をスロット又は穴の中で配向させるために用いられる平坦領域を有し、
少なくとも1つの半導体物体がドーピングされ又は材料と接触して、電子過剰領域と正孔過剰領域を形成して数勾配を形成し、該少なくとも2つの電極が、該電子過剰領域と接触する導電体、該正孔過剰領域と接触する導電体、及び光ダイオードを形成する外部電圧勾配を備え、又は少なくとも1つの半導体物体が、該半導体物体に対する2つの異なる材料の電子伝導性接点を用い、熱電気接合、複数の熱電気接合、電子トンネル接合、複数の電子トンネル接合、熱イオン接合、又は複数の熱イオン接合を形成し、
該電極が、導電性の箔、薄膜、繊維、マトリックス、台座、毛状物、布帛、メッシュ、粉末、伸縮性の多様な表面、又は表面上の皮膜からなり、
該電極が、別の伸縮性電子伝導性材料の上の伸縮性誘電性材料によって支持され、
光導管、光学構成成分、電気接点、及び界面材料の構造が、折り曲げ、ディンプル、多形表面、曲面、又は屈曲に形成され、材料間の熱膨張応力を方向変更又は消散させ、該光学構成成分、該電気接点、及び該界面材料が、折り曲げ、ディンプル、多形表面、曲面、又は屈曲に形成され、該弾性抑制に隣接する流体への放射伝熱又は熱伝達を改良し、
該接点の1つの外側表面に、放射放出又は対流を促進する伝熱構造又は材料コーティングをさらに備える、請求項1に記載の装置。 Each molded semiconductor object is electrically connected by using each slot or hole with two or more electrodes as part of the hole or slot;
Each slot or hole has a shape and structure that provides elastic compression or suppression of at least two electrodes in two different regions of each semiconductor object that make electrical contact to form a photodiode, and Molding that refracts, diffracts, scatters, interferes, fluoresces or reflects through the transmissive dielectric cover and / or concentrates the light reflected, refracted, scattered, diffracted, interfered or fluoresces from the electrode Light-transmitting dielectric cover, stretchable dielectric material between the electrode and outer stretchable cover, and light transmission between the light-transmissive dielectric cover and the semiconductor object and / or the outer stretchable cover Comprising a dielectric material,
The light conduit at the interface between the outside and the semiconductor has a destructive interference coating or a surface treatment that reduces light reflection by refractive index change;
Each molded semiconductor object has a flat region used to orient the semiconductor object in a slot or hole;
A conductor in which at least one semiconductor object is doped or in contact with the material to form an electron excess region and a hole excess region to form a number gradient, wherein the at least two electrodes are in contact with the electron excess region; A conductor in contact with the hole-excess region and an external voltage gradient forming a photodiode, or at least one semiconductor object uses two different material electronically conductive contacts to the semiconductor object, Forming a plurality of thermoelectric junctions, electron tunnel junctions, a plurality of electron tunnel junctions, a thermionic junction, or a plurality of thermionic junctions;
The electrode comprises a conductive foil, thin film, fiber, matrix, pedestal, hair, fabric, mesh, powder, various elastic surfaces, or a coating on the surface,
The electrode is supported by a stretchable dielectric material over another stretchable electronically conductive material;
Optical conduits, optical components, electrical contacts, and interface material structures are formed into folds, dimples, polymorphic surfaces, curved surfaces, or bends to redirect or dissipate thermal expansion stresses between the materials, the optical components The electrical contact and the interface material are formed in a fold, dimple, polymorphic surface, curved surface, or bend to improve radiant heat transfer or heat transfer to the fluid adjacent to the elastic restraint,
The apparatus of claim 1 , further comprising a heat transfer structure or material coating that facilitates radiation emission or convection on one outer surface of the contact .
多数の半導体物体、穴、及びスロットが、各半導体に電気接触をする光濃縮光学部品及び他の半導体と電気接触する回路ネットワークを持つアレイの中に形成され、
多数の半導体物体、穴、及びスロットが、光子を変換する並列接続半導体の周りで高電圧状態のバイパスダイオードとして作用する半導体と並列に電気接続された複数の半導体と光変換回路を形成し、
直列に電気接続された別の半導体が、逆電流状態を阻止するダイオードとして作用する回路ネットワークに配置され、光子を変換する並列接続半導体、及び同様な半導体に直列に電気接続され、ワイヤー、ダイオード、スイッチ、ヒューズ、コンデンサー、バッテリー、燃料電池、フライホイール、DC−DCコンバータ、又はDC−ACコンバータに電気接続される、請求項1に記載の装置。 The electrical connection to the semiconductor forms an array of connected circuit networks in parallel and in series;
A number of semiconductor objects, holes, and slots are formed in an array having light concentrating optical components that make electrical contact with each semiconductor and a circuit network that makes electrical contact with other semiconductors;
A number of semiconductor objects, holes, and slots form a light conversion circuit with a plurality of semiconductors electrically connected in parallel with a semiconductor that acts as a bypass diode in a high voltage state around a parallel connection semiconductor that converts photons,
Another semiconductor, electrically connected in series, is placed in a circuit network that acts as a diode to prevent reverse current conditions, and is connected in series to parallel connected semiconductors that convert photons, and similar semiconductors, wires, diodes, The apparatus of claim 1, wherein the apparatus is electrically connected to a switch, fuse, capacitor, battery, fuel cell, flywheel, DC-DC converter, or DC-AC converter .
該スロット又は穴が、ガラス、ポリイミドプラスチック、ポリアラミドプラスチック、ポリエステル、フッ素化炭化水素、セラミックス、シリコーンゴムをコーティングした鋼又はアルミニウム、シリコーンフッ化炭素をコーティングした鋼又はアルミニウム;ガラスをコーティングした鋼、銅、真鍮、もしくはアルミニウム;セラミックをコーティングした鋼;又はプラスチックをコーティングした鋼もしくはアルミニウムの誘電体に作成され、
該電極が、金、白金、パラジウム、銀、錫、アルミニウム、アンチモン、鉛、銅、亜鉛、チタン、モリブデン、タンタル、タングステン、アルミニウム、ニッケル、炭素、ケイ素、鉄、クロム、バナジウム、ニオブ、ジルコニウム、インジウム、もしくはこれらの材料の1つを含む合金の導電体、又は酸化錫、酸化亜鉛、もしくはホウ素をドーピングしたダイアモンドのような導電性化合物から作成されて、ガラス、光透過性プラスチック、フッ化炭素プラスチック、又はシリコーンフッ化炭素から作成された誘電性カバーをさらに備え、
該散乱体が二酸化チタンの粒子からなり、
該シンチレーターがアントラセンをドーピングしたプラスチック又はゴムからなり、かつ
該ケイ光体が、銅もしくは銀をドーピングした硫酸亜鉛、又はイットリウムアルミニウムガーネットからなる、請求項2に記載の装置。 The semiconductor object is arsenic doped silicon, phosphorous doped silicon, SiC, InAs, CuInSe 2 , Cu (InGa) Se 2 , CuInS, GaAs, InGaP, CdTe, AlGaAs, AlGaP, Ge semiconductor, or these Created from layers,
The slot or hole is glass, polyimide plastic, polyaramid plastic, polyester, fluorinated hydrocarbon, ceramics, steel or aluminum coated with silicone rubber, steel or aluminum coated with silicone fluorocarbon; steel coated with glass, Made of copper, brass or aluminum; ceramic coated steel; or plastic coated steel or aluminum dielectric,
The electrode is gold, platinum, palladium, silver, tin, aluminum, antimony, lead, copper, zinc, titanium, molybdenum, tantalum, tungsten, aluminum, nickel, carbon, silicon, iron, chromium, vanadium, niobium, zirconium, Made from conductive compounds such as indium or alloys containing one of these materials or diamond doped with tin oxide, zinc oxide or boron, glass, light transmissive plastics, fluorocarbons Further comprising a dielectric cover made of plastic or silicone fluorocarbon;
The scatterer comprises titanium dioxide particles;
The scintillator is made of plastic or rubber doped with anthracene, and
The apparatus of claim 2, wherein the phosphor comprises copper sulfate or silver doped zinc sulfate, or yttrium aluminum garnet .
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81927306P | 2006-07-07 | 2006-07-07 | |
PCT/US2007/015623 WO2008005557A2 (en) | 2006-07-07 | 2007-07-09 | Micro concentrators elastically coupled with spherical photovoltaic cells |
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JP2009543376A JP2009543376A (en) | 2009-12-03 |
JP2009543376A5 true JP2009543376A5 (en) | 2010-08-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009519476A Pending JP2009543376A (en) | 2006-07-07 | 2007-07-09 | A micro-concentrator connected to a spherical solar cell in a telescopic manner |
Country Status (9)
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EP (1) | EP2038936A2 (en) |
JP (1) | JP2009543376A (en) |
KR (1) | KR101443043B1 (en) |
CN (1) | CN101501979A (en) |
AU (1) | AU2007269559A1 (en) |
CA (1) | CA2657099C (en) |
MX (1) | MX2009000045A (en) |
TW (1) | TWI466304B (en) |
WO (1) | WO2008005557A2 (en) |
Families Citing this family (20)
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US20080185039A1 (en) * | 2007-02-02 | 2008-08-07 | Hing Wah Chan | Conductor fabrication for optical element |
AU2009252717A1 (en) * | 2008-05-26 | 2009-12-03 | Impel Microchip Ltd. | A monolithic low concentration photovoltaic panel based on polymer embedded photovoltaic cells and crossed compound parabolic concentrators |
DE102008064313A1 (en) * | 2008-12-20 | 2010-07-08 | Schott Solar Gmbh | Photovoltaic-module for use in e.g. pitched roof of house, has ventilator increasing air stream at lower side, and control system comparing initial temperature with reference temperature of module and for adjusting power of ventilator |
FR2942058B1 (en) * | 2009-02-06 | 2011-03-11 | Univ Sud Toulon Var | METHOD FOR OPTIMIZED CALCULATION OF A DEVICE FOR CONCENTRATING RADIUSES, IN PARTICULAR SOLAR RAYS, AND A RADIATION CONCENTRATOR THUS OBTAINED |
CN101764167B (en) * | 2009-12-25 | 2011-08-24 | 赵耀华 | High-efficient solar photovoltaic cell heat dissipating device and electricity and heat cogeneration system |
US8884156B2 (en) | 2010-11-29 | 2014-11-11 | Palo Alto Research Center Incorporated | Solar energy harvesting device using stimuli-responsive material |
US9279551B2 (en) | 2011-12-05 | 2016-03-08 | Koninklijke Philips N.V. | Lighting system |
US8752380B2 (en) | 2012-05-22 | 2014-06-17 | Palo Alto Research Center Incorporated | Collapsible solar-thermal concentrator for renewable, sustainable expeditionary power generator system |
JP5983471B2 (en) * | 2013-03-11 | 2016-08-31 | 株式会社豊田自動織機 | Solar cell module |
JP2014175538A (en) * | 2013-03-11 | 2014-09-22 | Toyota Industries Corp | Solar cell module |
JP6024529B2 (en) * | 2013-03-11 | 2016-11-16 | 株式会社豊田自動織機 | Solar cell module and method for manufacturing solar cell module |
ES2527969B1 (en) * | 2013-08-01 | 2015-11-23 | Instituto Holográfico Andaluz, S.L. | Three-dimensional thermal or photovoltaic solar panel with built-in holography |
EP2916151B1 (en) | 2014-03-05 | 2020-01-01 | Corning Optical Communications LLC | Method of forming a fiber coupling device |
CN104852677B (en) * | 2015-03-19 | 2017-04-19 | 华南理工大学 | Micro-lens light-absorbing and micro-spherical silicon light-condensing combined solar cell |
KR101961834B1 (en) * | 2017-11-06 | 2019-03-26 | 전북대학교산학협력단 | Method of fabricating a led display apparatus |
CN108306610A (en) * | 2018-02-12 | 2018-07-20 | 张明永 | A kind of solar energy photovoltaic generator |
TWI661456B (en) * | 2018-07-31 | 2019-06-01 | 聚鼎科技股份有限公司 | Protection device |
CN110828254B (en) * | 2018-08-07 | 2022-11-25 | 聚鼎科技股份有限公司 | Protective element |
CN109541668B (en) * | 2018-12-03 | 2020-05-22 | 西安交通大学 | Power-free radiation monitoring device and method |
CN110390863B (en) * | 2019-07-22 | 2021-08-20 | 中国原子能科学研究院 | Thermal ion power generation experimental device adopting electrode assembly integral welding process |
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JPS5854684A (en) * | 1981-09-08 | 1983-03-31 | テキサス・インスツルメンツ・インコ−ポレイテツド | Solar energy converter |
US4514580A (en) * | 1983-12-02 | 1985-04-30 | Sri International | Particulate silicon photovoltaic device and method of making |
US4697041A (en) * | 1985-02-15 | 1987-09-29 | Teijin Limited | Integrated solar cells |
WO1998031054A1 (en) * | 1997-01-13 | 1998-07-16 | Hitachi, Ltd. | Photoelectric transducer and device using the same |
JPH1131837A (en) * | 1997-07-14 | 1999-02-02 | Hitachi Ltd | Light collecting type solar generator and module using it |
JP2000022184A (en) * | 1998-07-03 | 2000-01-21 | Nippon Telegr & Teleph Corp <Ntt> | Spherical or rod-shaped crystal solar cell and its manufacture |
JP2001210843A (en) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | Photovoltaic power generating panel and method of manufacturing it |
US6355873B1 (en) * | 2000-06-21 | 2002-03-12 | Ball Semiconductor, Inc. | Spherical shaped solar cell fabrication and panel assembly |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
JP3490969B2 (en) * | 2000-11-24 | 2004-01-26 | 圭弘 浜川 | Photovoltaic generator |
JP3902210B2 (en) * | 2002-05-02 | 2007-04-04 | 仗祐 中田 | Light receiving or light emitting panel and manufacturing method thereof |
JP4180636B2 (en) * | 2004-03-12 | 2008-11-12 | 京セミ株式会社 | Stacked solar cell |
-
2007
- 2007-07-06 TW TW096124657A patent/TWI466304B/en not_active IP Right Cessation
- 2007-07-09 KR KR1020097000238A patent/KR101443043B1/en not_active IP Right Cessation
- 2007-07-09 MX MX2009000045A patent/MX2009000045A/en active IP Right Grant
- 2007-07-09 EP EP07810263A patent/EP2038936A2/en not_active Withdrawn
- 2007-07-09 CA CA2657099A patent/CA2657099C/en not_active Expired - Fee Related
- 2007-07-09 CN CNA2007800257432A patent/CN101501979A/en active Pending
- 2007-07-09 JP JP2009519476A patent/JP2009543376A/en active Pending
- 2007-07-09 WO PCT/US2007/015623 patent/WO2008005557A2/en active Application Filing
- 2007-07-09 AU AU2007269559A patent/AU2007269559A1/en not_active Abandoned
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