JP2009278078A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009278078A JP2009278078A JP2009100063A JP2009100063A JP2009278078A JP 2009278078 A JP2009278078 A JP 2009278078A JP 2009100063 A JP2009100063 A JP 2009100063A JP 2009100063 A JP2009100063 A JP 2009100063A JP 2009278078 A JP2009278078 A JP 2009278078A
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- JP
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- Prior art keywords
- film
- wiring
- conductive film
- insulating film
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 216
- 239000000758 substrate Substances 0.000 claims description 199
- 239000011521 glass Substances 0.000 claims description 81
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 83
- 239000013078 crystal Substances 0.000 description 71
- 229910052710 silicon Inorganic materials 0.000 description 54
- 239000010703 silicon Substances 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 49
- 229910052581 Si3N4 Inorganic materials 0.000 description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 45
- 239000007789 gas Substances 0.000 description 39
- 150000002500 ions Chemical class 0.000 description 37
- 238000010438 heat treatment Methods 0.000 description 29
- 229910052721 tungsten Inorganic materials 0.000 description 27
- 239000010937 tungsten Substances 0.000 description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- 239000002184 metal Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000001514 detection method Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 238000011282 treatment Methods 0.000 description 13
- 230000001133 acceleration Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000000926 separation method Methods 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- 239000002585 base Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 9
- -1 aluminum nitride Chemical class 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 description 3
- 239000005354 aluminosilicate glass Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- BHVMAFDNFMTYLQ-UHFFFAOYSA-N azanylidyne(azanylidynegermyloxy)germane Chemical compound N#[Ge]O[Ge]#N BHVMAFDNFMTYLQ-UHFFFAOYSA-N 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000005078 molybdenum compound Substances 0.000 description 1
- 150000002752 molybdenum compounds Chemical class 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Abstract
【解決手段】高電源電位が印加される端子に電気的に接続される配線、および低電源電位が印加される端子に電気的に接続される配線を、それぞれ、誘電体を介して隣接させ、かつ集積回路を取り囲むように形成する。このことにより、端子と集積回路の間に配線抵抗が付加され、かつ2本の配線間に容量を付加することができる。ESDなどにより端子に過電圧が印加されても、そのエネルギーが配線抵抗および付加容量により消費されるため、集積回路の破壊を抑えることができる。
【選択図】図1
Description
図1Aおよび図1Bを用いて、本実施形態の半導体装置の構成を説明する。図1Aは、本実施形態の半導体装置のレイアウトを説明する平面図であり、図1Bは図1AのX−Y切断線による断面図である。
図3Aおよび図3Bを用いて、本実施形態の半導体装置の構成を説明する。図3Aは、本実施形態の半導体装置のレイアウトを説明する平面図であり、図3Bは図3AのX−Y切断線による断面図である。
本実施形態では、第1配線111、および第2配線112をそれぞれ、絶縁膜を介して積層された2つの導電膜で形成する例を示す。図5A、図5B、図6Aおよび図6Bを用いて、本実施形態の半導体装置の構成を説明する。図5Aは、本実施形態の半導体装置のレイアウトを説明する平面図であり、図5Bは図5AのX−Y切断線による断面図である。また、図6Aおよび図6Bは、それぞれ、第1配線111および第2配線112を構成する導電膜のレイアウトを説明する平面図であり、図6Aは2層目の導電膜の平面図であり、図6Bは1層目の導電膜の平面図である。
実施形態1では、図1Aに示すように第1配線111および第2配線112は、VDD端子102、VSS端子103を起点として、内巻きに集積回路101を取り囲むように形成したが、これらを、それぞれ、VDD端子102、VSS端子103を起点にして、外巻きに集積回路101を取り囲むように形成することもできる。本実施形態では、第1配線111および第2配線112を、VDD端子102、VSS端子103を起点に外巻きに集積回路101を取り囲むように形成する例を説明する。図7Aは、本実施形態の半導体装置のレイアウトを説明する平面図であり、図7Bは図7AのX−Y切断線による断面図である。
図1Aの半導体装置において、第1配線111および第2配線112が、集積回路101と重なる部分を含んでいてもよい。本実施形態では、集積回路101と重なる部分を含んだ第1配線111および第2配線112を有する半導体装置について説明する。図8は、第1配線111および第2配線112のレイアウトを説明する平面図である。
本実施形態では、半導体装置の一具体例として光検出装置について説明する。まず、図9−図11を用いて、光検出装置の構成を説明する。図9は、本実施形態の光検出装置の回路図である。図10は、同光検出装置のレイアウトを説明する平面図である。図11は、同光検出装置の積層構造を説明する断面図である。
実施形態6では、集積回路の作製時に使用したガラス基板310を、光検出装置の基板としてそのまま用いている。集積回路の作製が完了した後、ガラス基板310から集積回路を分離して、他の基板上に集積回路を固定することができる。本実施形態では、このような構造の半導体装置について説明する。
実施形態6では、非晶質半導体膜を結晶化して形成した結晶性半導体膜を用いて集積回路を作製した。ガラス基板に単結晶半導体膜を形成し、この単結晶半導体膜を用いて集積回路を作製することができる。本実施形態では、ガラス基板上に単結晶半導体膜を形成する方法を説明する。
実施形態6により得られた光検出装置を電子機器に取り付けることで、光検出装置の検出信号に基づいて、電気機器の動作を制御することができる。例えば、表示パネルを備えた電子機器に光検出装置を内蔵することで、表示パネルの輝度調節を光検出装置の検出信号をもとに行うことが可能になる。本実施形態では、図25A−図25Fを用いて、このような電子機器のいくつかの例を説明する。
VSS 低電源電位
10 基板
21 絶縁膜
22 絶縁膜
23 絶縁膜
25 絶縁膜
101 集積回路
102 第1端子(VDD端子)
103 第2端子(VSS端子)
105 接続部
106 接続部
107 内部配線
108 内部配線
111 第1配線
111a 接続部
111b 接続部
111c 接続部
112 第2配線
112a−112c 接続部
131 抵抗素子
132 抵抗素子
133 容量素子
201−204 導電膜
250−255 半導体膜
301 接続部
302 接続部
303 光
304 光電変換素子
305 増幅回路
307 トランジスタ
308 トランジスタ
340 半導体膜
351 導電膜
361 導電膜
361A 端部
362 導電膜
362A 端部
363 導電膜
364 導電膜
370 光電変換層
381 導電膜
381A 端部
381B 端部
382 導電膜
382A 端部
382B 端部
Claims (9)
- 誘電体と、
第1電源電位が印加される第1配線と、
前記誘電体を介して前記第1配線に隣接して形成され、第2電源電位が印加される第2配線と、
複数の半導体素子を含み、前記第1配線および前記第2配線に電気的に接続され、前記第1配線および前記第2配線に取り囲まれている集積回路と、
を有することを特徴とする半導体装置。 - 請求項1において、
第2の誘電体と、
前記第2の誘電体を介して前記第1配線および前記第2配線と重なり、電気的に浮遊状態とされている少なくとも1つの半導体膜または導電膜と、
を有することを特徴とする半導体装置。 - 第1電源電位が印加される第1配線と、
第2電源電位が印加される第2配線と、
第1絶縁膜と、
前記第1絶縁膜上に形成されている第2絶縁膜と、
前記第1配線に含まれ、前記第1絶縁膜上に形成されている第1導電膜と、
前記第2配線に含まれ、前記第2絶縁膜を介して前記第1導電膜と隣接して前記第1絶縁膜上に形成されている第2導電膜と、
複数の半導体素子を含み、前記第1導電膜および前記第2導電膜に取り囲まれ、前記第1導電膜を経て前記第1電源電位が印加され、前記第2導電膜を経て前記第2電源電位が印加される集積回路と、
を有することを特徴とする半導体装置。 - 第1電源電位が印加される第1配線と、
第2電源電位が印加される第2配線と、
第1絶縁膜と、
前記第1絶縁膜上に形成されている第2絶縁膜と、
前記第2絶縁膜上に形成されている第3絶縁膜と、
前記第1配線に含まれ、前記第1絶縁膜上に形成されている第1導電膜と、
前記第2配線に含まれ、前記第2絶縁膜を介して前記第1導電膜に隣接して前記第1絶縁膜上に形成されている第2導電膜と、
前記第1配線に含まれ、前記第2絶縁膜を介して前記第1導電膜および前記第2導電膜上に形成されている第3導電膜と、
前記第2配線に含まれ、記第3絶縁膜を介して前記第3導電膜に隣接し、前記第2絶縁膜を介して前記第1導電膜および前記第2導電膜上に形成されている第4導電膜と、
複数の半導体素子を含み、前記第1導電膜乃至前記第4導電膜に取り囲まれ、前記第1導電膜および前記第3導電膜を経て前記第1電源電位が印加され、前記第2導電膜および前記第4導電膜を経て前記第2電源電位が印加される集積回路と、
を有することを特徴とする半導体装置。 - 請求項4において、
前記第1導電膜と前記第4導電膜は、前記第2絶縁膜を介して隣接し、
前記第2導電膜と前記第3導電膜は、前記第2絶縁膜を介して隣接していることを特徴とする半導体装置。 - 請求項3において、
前記第1絶縁膜を介して前記第1導電膜および前記第2導電膜に重なり、電気的に浮遊状態とされている少なくとも1つの半導体膜または第3導電膜を有することを特徴とする半導体装置。 - 請求項4または5において、
前記第1導電膜乃至前記第4導電膜に重なり、前記第1絶縁膜に覆われ、電気的に浮遊状態とされている少なくとも1つの半導体膜または第5導電膜を有することを特徴とする半導体装置。 - 請求項1乃至7のいずれか1項において、
前記集積回路は、
光電変換素子と、
前記光電変換素子を流れる電流を増幅する増幅回路と、
を有することを特徴とする半導体装置。 - 請求項1乃至8のいずれか1項において、
前記集積回路は、ガラス基板上に形成されていることを特徴とする半導体装置。
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JP2021040161A (ja) * | 2009-12-08 | 2021-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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JP2017126800A (ja) * | 2011-03-11 | 2017-07-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP2017085082A (ja) * | 2015-08-31 | 2017-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
JP2021077913A (ja) * | 2015-08-31 | 2021-05-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2023036754A (ja) * | 2015-08-31 | 2023-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2023166379A1 (ja) * | 2022-03-04 | 2023-09-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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US8106474B2 (en) | 2012-01-31 |
US20090261444A1 (en) | 2009-10-22 |
JP5552256B2 (ja) | 2014-07-16 |
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