JP2009263721A - Film deposition apparatus - Google Patents

Film deposition apparatus Download PDF

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JP2009263721A
JP2009263721A JP2008114734A JP2008114734A JP2009263721A JP 2009263721 A JP2009263721 A JP 2009263721A JP 2008114734 A JP2008114734 A JP 2008114734A JP 2008114734 A JP2008114734 A JP 2008114734A JP 2009263721 A JP2009263721 A JP 2009263721A
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substrate
cooling
back surface
cooling member
film forming
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JP5072700B2 (en
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Kazunari Yonemoto
一成 米元
Tetsuya Karaki
哲也 唐木
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Canon Inc
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of enhancing the film deposition quality by improving the temperature distribution in a film-deposited substrate. <P>SOLUTION: In a process of performing the film deposition by tightly fitting a mask 4 to a film deposition surface of a substrate 1, the temperature control of the substrate 1 is performed by tightly fitting a back side cooling member 3 to a non-film deposition surface side of the substrate 1. When a center part of the substrate 1 is opposite to an evaporation source, and higher in temperature than a peripheral part, a projecting part 3a having a large contact area with the substrate 1 is provided on a center part of the back side cooling member 3. Thus, the cooling efficiency of the back side cooling member 3 is distributed to improve the temperature distribution of the substrate 1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、基板温度分布を改善して高精度の成膜を可能とする成膜装置に関するものである。   The present invention relates to a film forming apparatus that improves film temperature distribution and enables highly accurate film formation.

薄型表示パネルに用いる有機ＥＬ素子は、液晶素子と共に年々その需要が増大し、パネルの大型化・高性能化、高精度化や、歩留まり、スループット等生産性の向上を図るべく成膜装置及び成膜方法の検討が行われている。   The demand for organic EL elements used in thin display panels is increasing year by year along with liquid crystal elements. To increase productivity, such as increase in panel size, performance, accuracy, yield, and throughput, etc. Membrane methods are being studied.

一般的に有機ＥＬ素子は、蛍光性有機化合物を含む薄膜を、陰極と陽極とで挟んだ構成を有する。そして、前記薄膜に電子及び正孔（ホール）を注入して再結合させることにより励起子（エキシトン）を生成させ、このエキシトンが失活する際の光の放出（蛍光、燐光）を利用して発光させる。この有機ＥＬ素子の特徴は、１０Ｖ以下の低電圧で１００〜１０００００ｃｄ／ｍ２程度の高輝度の面発光が可能であり、また、蛍光物質の種類を選択することにより青色から赤色までの発光が可能なことである。 Generally, an organic EL element has a configuration in which a thin film containing a fluorescent organic compound is sandwiched between a cathode and an anode. Then, electrons and holes (holes) are injected into the thin film and recombined to generate excitons (excitons), and light emission (fluorescence, phosphorescence) when the excitons are deactivated is used. Make it emit light. The characteristics of this organic EL element are that it can emit surface light with a high luminance of about 100 to 100000 cd / m 2 at a low voltage of 10 V or less, and emit light from blue to red by selecting the type of fluorescent material. It is possible.

有機薄膜の形成方法については、低分子（モノマー）有機ＥＬ材料は主にマスク成膜法を用いた真空蒸着法で成膜され、さらに、電極形成についてはスパッタ法あるいは真空蒸着法で引き続き成膜されている。   As for the method of forming an organic thin film, a low molecular (monomer) organic EL material is formed mainly by a vacuum vapor deposition method using a mask film formation method, and further, an electrode is formed continuously by a sputtering method or a vacuum vapor deposition method. Has been.

しかし、従来の成膜装置で用いられるマスクユニットを用いて薄膜形成を行う場合、成膜速度を上げるために蒸発源への投入パワーを増加させると、基板は蒸着成膜時に蒸着熱とともに蒸発源からの放射熱およびマスクから接触熱を受熱して、基板温度が上昇する。   However, when a thin film is formed using a mask unit used in a conventional film forming apparatus, if the input power to the evaporation source is increased in order to increase the film forming speed, the substrate is evaporated together with the evaporation heat during the evaporation film forming. The substrate temperature rises by receiving the radiant heat from and the contact heat from the mask.

この基板温度を下げるために、従来は、基板と冷却部材の間に、例えば柔らかな熱伝導部材を入れて冷却効率を上げている。また、輻射熱を吸収させる手段として、例えばヘリウム冷凍機のクライオ面を用いて、基板冷却を促進させている（特許文献１参照）。   In order to lower the substrate temperature, conventionally, for example, a soft heat conducting member is inserted between the substrate and the cooling member to increase the cooling efficiency. Further, as means for absorbing radiant heat, for example, a cryo-surface of a helium refrigerator is used to promote substrate cooling (see Patent Document 1).

また、マスク遮蔽部と成膜部との温度差による破損を防止するために基板温度分布を改善する方法が知られている。これは、基板のマスク遮蔽部の温度が低いことを改善するためにマスク表面の放射率を０．２以上にしてマスク温度を上昇させている。さらに、マスク両表面に表面粗さＲａが３〜１０μの凹凸を形成し、放射率を向上させてマスク温度を上昇させている。また、マスクとトレイ間は部分接触と断熱材で断熱させて、トレイへの熱の逃げを抑えてマスク温度を制御している（特許文献２参照）。   Further, a method for improving the substrate temperature distribution is known in order to prevent damage due to a temperature difference between the mask shielding part and the film forming part. This increases the mask temperature by setting the emissivity of the mask surface to 0.2 or more in order to improve the low temperature of the mask shielding portion of the substrate. Furthermore, unevenness having a surface roughness Ra of 3 to 10 μm is formed on both surfaces of the mask to improve the emissivity and raise the mask temperature. In addition, the mask and the tray are insulated by partial contact and a heat insulating material, and the mask temperature is controlled by suppressing the escape of heat to the tray (see Patent Document 2).

特開２００５−２８５５７６号公報JP 2005-285576 A 特開２００５−０５４２４４号公報Japanese Patent Laid-Open No. 2005-054244

しかしながら、成膜中の基板には蒸発源の位置、数に対応して高温部が生じており、さらにその供給熱量が増加するにつれてその温度分布も増大する。   However, a high temperature portion is generated on the substrate during film formation corresponding to the position and number of evaporation sources, and the temperature distribution increases as the amount of heat supplied increases.

例えば、図９に示すように、蒸着熱源が中央１箇所の場合は、基板１０１の中央部の温度が高くなり周辺部は低くなる。   For example, as shown in FIG. 9, when the evaporation heat source is at one central position, the temperature at the central portion of the substrate 101 is high and the peripheral portion is low.

また、デバイス高精度化を目的として、例えば、３種の材料を同時に蒸着する場合は、蒸着熱源が３箇所に増加し、図１０に示すように、基板２０１には３箇所の高温部を持った温度分布が生じ、これにより温度分布が増大していた。   Further, for the purpose of improving device accuracy, for example, when three kinds of materials are vapor-deposited at the same time, the evaporation heat source is increased to three places, and the substrate 201 has three high-temperature portions as shown in FIG. Temperature distribution was generated, which increased the temperature distribution.

基板温度分布の増大に対しては、特許文献１及び特許文献２に記載の対策では対応できず、そのため、マスクとの位置ずれ、熱変形によるゆがみ等により、着膜の位置精度や線幅精度が悪化していた。   The increase in the substrate temperature distribution cannot be dealt with by the measures described in Patent Document 1 and Patent Document 2, and therefore, the positional accuracy and the line width accuracy of the deposited film due to misalignment with the mask, distortion due to thermal deformation, and the like. Was getting worse.

本発明は、成膜時の基板温度分布を改善することにより高精度成膜を可能とする成膜装置を提供することを目的とするものである。   An object of this invention is to provide the film-forming apparatus which enables highly accurate film-forming by improving the substrate temperature distribution at the time of film-forming.

本発明の成膜装置は、蒸発源から発生する成膜材料の蒸気を、マスクを介して基板に蒸着させる成膜装置において、前記基板の成膜面と反対側の非成膜面に接触して前記基板を冷却する背面冷却部材と、前記背面冷却部材を冷却する冷却手段と、前記背面冷却部材の前記基板に対する接触面に、前記蒸発源による熱源位置に対応するように冷却効率の分布をもたせるための冷却効率制御手段と、を有することを特徴とする。   The film forming apparatus of the present invention is a film forming apparatus that deposits vapor of a film forming material generated from an evaporation source onto a substrate through a mask, and contacts a non-film forming surface opposite to the film forming surface of the substrate. And a cooling means for cooling the back surface cooling member, a cooling means for cooling the back surface cooling member, and a contact surface of the back surface cooling member with respect to the substrate, the distribution of the cooling efficiency corresponding to the position of the heat source by the evaporation source. And cooling efficiency control means for providing the cooling efficiency.

基板の面内温度分布をできるだけ小さく抑えるためには、特に、真空中の基板温度については背面冷却部材との接触による冷却が効果大である。そこで、基板の高温個所を、背面冷却部材によって基板背面から部分的に効率よく冷却するための冷却効率制御手段を設けることにより、基板温度分布を改善する。   In order to keep the in-plane temperature distribution of the substrate as small as possible, cooling by contact with the rear cooling member is particularly effective for the substrate temperature in vacuum. Therefore, the substrate temperature distribution is improved by providing a cooling efficiency control means for efficiently cooling the high temperature portion of the substrate from the back surface of the substrate by the back surface cooling member.

基板の温度分布を改善し、基板の熱変形を抑制することで、着膜の位置精度や線幅精度を向上させる。これにより、高品質な有機ＥＬ素子等を製造することができる。   By improving the temperature distribution of the substrate and suppressing thermal deformation of the substrate, the positional accuracy and line width accuracy of the deposited film are improved. Thereby, a high quality organic EL element etc. can be manufactured.

本発明を実施するための最良の形態を図面に基づいて説明する。   The best mode for carrying out the present invention will be described with reference to the drawings.

図１（ａ）は、第１の実施形態を示す。図示しない蒸発源から発生する成膜材料の蒸気を蒸着させる基板１は、その成膜面と、反対側の非成膜面と、をマグネット２により、それぞれ背面冷却部材３とマスク４に密着される。平板四角枠状のフレームと一体化したマスク４は、トレイ５に取り付けられ、その上に基板１と背面冷却部材３を載包し、マグネット２によりマスク成膜のためのユニットとして構成される。マグネット２は、磁力によりマスク４を基板１に引き寄せて密着させる。   FIG. 1A shows a first embodiment. A substrate 1 on which vapor of a film forming material generated from an evaporation source (not shown) is deposited is closely attached to a back surface cooling member 3 and a mask 4 by a magnet 2 and a non-film forming surface on the opposite side. The A mask 4 integrated with a flat plate frame is attached to a tray 5, and a substrate 1 and a rear cooling member 3 are mounted thereon. The mask 2 is configured as a unit for mask film formation. The magnet 2 brings the mask 4 into close contact with the substrate 1 by magnetic force.

トレイ５は、銅（Ｃｕ）、アルミニウム（Ａｌ）、ステンレススティール（ＳＵＳ）、鉄（Ｆｅ）またはこれらの合金等の、比較的熱伝導性が良好で機械加工が容易な材料を用いることが望ましい。   The tray 5 is preferably made of a material having relatively good thermal conductivity and easy machining, such as copper (Cu), aluminum (Al), stainless steel (SUS), iron (Fe), or an alloy thereof. .

トレイ５の中央に配置される基板１は、３００×４００ｍｍ角、厚さ０．７ｍｍの無アルカリガラス基板である。マスク４は、基板１に形成したいパターンに対応して、各種のパターン開口部が設けられた厚さ０．０１〜０．２ｍｍで１００ｍｍ角の金属板製のパターン形成用のマスクである。マスク４は、基板１に密着するように、トレイ５に装着されたマグネット２の磁力により引き上げられるので、例えばインバーやＮｉで作製される。   The substrate 1 disposed in the center of the tray 5 is a non-alkali glass substrate having a size of 300 × 400 mm and a thickness of 0.7 mm. The mask 4 is a pattern forming mask made of a 100 mm square metal plate having a thickness of 0.01 to 0.2 mm provided with various pattern openings corresponding to a pattern to be formed on the substrate 1. Since the mask 4 is pulled up by the magnetic force of the magnet 2 mounted on the tray 5 so as to be in close contact with the substrate 1, it is made of, for example, Invar or Ni.

蒸発源による熱源位置（蒸着熱源）が基板１の中央部に対応する１箇所である成膜装置において、図１（ｂ）、（ｃ）に示すように、背面冷却部材３には、基板１に対する接触面の中央部に、２００×１００ｍｍ、高さ０．５ｍｍの凸部３ａを形成する。   In the film forming apparatus in which the heat source position (vapor deposition heat source) by the evaporation source is one place corresponding to the central portion of the substrate 1, the back surface cooling member 3 includes the substrate 1 as shown in FIGS. A convex portion 3a having a size of 200 × 100 mm and a height of 0.5 mm is formed at the center of the contact surface.

凸部３ａは、蒸着熱源に対応するように背面冷却部材３の冷却効率に分布をもたせるための冷却効率制御手段であり、例えば、部材の組立や研削により形成される。背面冷却部材３には図示しない冷却管（冷却手段）が配置されている。   The convex portion 3a is a cooling efficiency control means for giving a distribution to the cooling efficiency of the back surface cooling member 3 so as to correspond to the vapor deposition heat source, and is formed, for example, by assembling or grinding the members. A cooling pipe (cooling means) (not shown) is disposed on the back surface cooling member 3.

このように、凸部３ａによって、背面冷却部材３の面内方向に接触面積の分布をもたせることにより、基板１の中央部の冷却効率を高めて、基板温度を均一にする。   Thus, by providing the contact area distribution in the in-plane direction of the back surface cooling member 3 by the convex portions 3a, the cooling efficiency of the central portion of the substrate 1 is increased and the substrate temperature is made uniform.

比較のために、冷却効率に分布をもたせるための凸部の無い背面冷却部材を用いて成膜したところ、基板の中央部が高温になり、周辺部との温度差が１０〜１５℃あった。   For comparison, when a film was formed using a back surface cooling member without a convex portion for providing a distribution in cooling efficiency, the central portion of the substrate became high temperature, and the temperature difference from the peripheral portion was 10 to 15 ° C. .

一方、本実施形態による背面冷却部材３を取り付けた基板１では、上記温度差が２．５℃となり、温度分布が改善した。そして、基板温度分布に起因する、中央部と周辺部のパターンのずれは、±２μｍ以下に位置精度が改善した。   On the other hand, in the board | substrate 1 which attached the back surface cooling member 3 by this embodiment, the said temperature difference became 2.5 degreeC and temperature distribution improved. Then, the positional accuracy improved to ± 2 μm or less for the shift between the central portion and the peripheral portion due to the substrate temperature distribution.

これは、蒸着源の位置に対応した背面冷却部材の中央部に凸加工を施し、図２に示すように、中央部の熱の流れを増加させて冷却を促進し、基板の中央部と周辺部との温度差を低減することができたためである。   This is because convex processing is applied to the central part of the back surface cooling member corresponding to the position of the vapor deposition source, as shown in FIG. 2, the heat flow in the central part is increased to promote cooling, and the central part and the periphery of the substrate This is because the temperature difference from the part could be reduced.

なお、凸部形状は制約なく、図３に示すように、ピン形状の凸部である凸ピン部１３ａを背面冷却部材１３の中央部に複数配置した構成でもよい。   The shape of the convex portion is not limited, and a configuration in which a plurality of convex pin portions 13a, which are pin-shaped convex portions, are arranged at the central portion of the back surface cooling member 13 as shown in FIG.

蒸発源を３箇所に分布させた成膜装置においては、３箇所の熱源位置に対応して３ヶ所の高温部が存在する。このため、図４に示すように、基板に対する接触面の中央部３箇所に５０×５０ｍｍ、高さ０．５ｍｍの凸部２３ａを研削形成した背面冷却部材２３を用いた。   In the film forming apparatus in which the evaporation sources are distributed in three places, there are three high temperature portions corresponding to the three heat source positions. For this reason, as shown in FIG. 4, a back surface cooling member 23 in which convex portions 23 a having a size of 50 × 50 mm and a height of 0.5 mm are formed by grinding at three locations on the central portion of the contact surface with the substrate.

背面冷却部材２３には図示しない冷却管が配置されている。図１の装置と同様に、基板温度が改善し、成膜位置精度を向上させることができた。   A cooling pipe (not shown) is disposed on the rear cooling member 23. Similar to the apparatus of FIG. 1, the substrate temperature was improved and the film deposition position accuracy was improved.

本実施形態によれば、基板の裏面に密着して配設された背面冷却部材の接触面に、凸形状を分布配置して接触面積に粗密差をつけることで、基板の冷却状況に差ができ基板温度分布を小さくすることができる。これによって基板変形が小さくなり、成膜時にパターン形成用のマスクとのずれが改善されるため、着膜の位置精度や線幅精度が向上する。   According to the present embodiment, there is a difference in the cooling state of the substrate by distributing the convex shape on the contact surface of the back surface cooling member disposed in close contact with the back surface of the substrate and making a difference in the contact area. In addition, the substrate temperature distribution can be reduced. As a result, the deformation of the substrate is reduced, and the deviation from the mask for pattern formation is improved at the time of film formation, so that the positional accuracy and line width accuracy of the deposited film are improved.

図５は、第２の実施形態を示す。これは、蒸着熱源が中央部１箇所である成膜装置において、背面冷却部材３３と基板の中央部との接触面積を増やすために、背面冷却部材３３の中央部に表面処理を施したものである。例えば、背面冷却部材３３の中央部に、２００×１００ｍｍのエリア部分３３ａの表面粗さＲａを２μｍ以下に仕上げた表面処理面を設ける。その他の部分はＲａが２μｍよりも大きくなるようにすることで、冷却効率の面内方向の分布をもたせている。背面冷却部材３３には冷却管（冷却手段）が配置されている。   FIG. 5 shows a second embodiment. This is a film forming apparatus in which the deposition heat source is at one central portion, and a surface treatment is applied to the central portion of the rear cooling member 33 in order to increase the contact area between the rear cooling member 33 and the central portion of the substrate. is there. For example, a surface-treated surface in which the surface roughness Ra of the area portion 33a of 200 × 100 mm is finished to 2 μm or less is provided at the center of the rear cooling member 33. The other portions are provided with an in-plane distribution of cooling efficiency by making Ra larger than 2 μm. A cooling pipe (cooling means) is disposed on the rear cooling member 33.

このように構成された背面冷却部材を取り付けた成膜装置により蒸着成膜した結果、基板の温度分布が第１の実施形態と同様に改善し、基板温度分布に起因する中央部と周辺部のパターン位置ずれが低減された。   As a result of vapor deposition film formation by the film forming apparatus to which the back surface cooling member configured in this way is attached, the temperature distribution of the substrate is improved similarly to the first embodiment, and the central portion and the peripheral portion due to the substrate temperature distribution are improved. Pattern position shift was reduced.

これは、背面冷却部材の中央部に、例えば研磨により表面粗さを小さく表面処理したエリアを設けることで、表面粗さに分布をもたせて冷却効率に差をつけ、従来中央部が高く、周辺部が低くなっていた基板温度分布を小さくできたことによる。   This is because, for example, by providing an area where the surface roughness is reduced by polishing, for example, at the center of the rear cooling member, the distribution of the surface roughness is distributed and the cooling efficiency is different. This is because the temperature distribution of the substrate, which has been lowered, can be reduced.

さらに、蒸着熱源が３箇所である成膜装置においても、本実施形態による背面冷却部材は、基板接触面の中央部３箇所に同様の研磨仕上げを行うことにより、第１の実施形態と同様に基板温度を改善し、成膜位置精度を向上させることができた。   Furthermore, also in the film forming apparatus having three evaporation heat sources, the back surface cooling member according to the present embodiment performs the same polishing finish on the three central portions of the substrate contact surface, similarly to the first embodiment. The substrate temperature was improved and the film deposition position accuracy was improved.

本実施形態によれば、基板の裏面に密着する背面冷却部材の接触面において部分的に表面粗さを変えて基板の冷却状況に差をつくることで、基板温度分布を小さく改善することができる。その結果、基板変形が小さくなり、成膜時にパターン形成用のマスクとのずれが改善されるため、着膜の位置精度や線幅精度が向上する。   According to this embodiment, the temperature distribution of the substrate can be improved to be small by changing the surface roughness partially on the contact surface of the back surface cooling member that is in close contact with the back surface of the substrate to make a difference in the cooling state of the substrate. . As a result, the deformation of the substrate is reduced, and the deviation from the mask for pattern formation is improved at the time of film formation, so that the positional accuracy and line width accuracy of the deposited film are improved.

図６及び図７は、第３の実施形態を示す。蒸着熱源が中央部１箇所である成膜装置において、背面冷却部材４３の基板接触面の中央部には、２００×１００ｍｍの部分に熱伝導率が高い厚さ１ｍｍの銅板４３ａ貼り付け、周辺には熱伝導率が低い厚さ１ｍｍのセラミック板４３ｂを貼り付けた。このように、熱伝導率の異なる異種材料を接合することにより、背面冷却部材４３の冷却効率に分布を持たせている。なお、背面冷却部材４３には図示しない冷却管が配置されている。   6 and 7 show a third embodiment. In the film forming apparatus in which the evaporation heat source is one central portion, a copper plate 43a having a thickness of 1 mm having a high thermal conductivity is attached to a 200 × 100 mm portion at the central portion of the substrate contact surface of the rear cooling member 43, Stuck a 1 mm thick ceramic plate 43b with low thermal conductivity. As described above, the dissimilar materials having different thermal conductivities are joined, so that the cooling efficiency of the back surface cooling member 43 is distributed. Note that a cooling pipe (not shown) is disposed on the rear cooling member 43.

このように構成された背面冷却部材を取り付けた成膜装置により蒸着成膜した結果、基板の温度は中央部と周辺部の温度分布が第１の実施形態と同様に改善し、基板温度分布に起因する中央部と周辺部のパターン位置ずれが改善した。   As a result of the vapor deposition film formation by the film forming apparatus having the rear cooling member configured as described above, the temperature distribution of the substrate is improved in the central portion and the peripheral portion as in the first embodiment, and the substrate temperature distribution is improved. The resulting pattern misalignment between the central part and the peripheral part was improved.

これは、接触面中央部に熱伝導率が良い部材を、そして周辺には熱伝導率が悪い部材を貼り付けた背面冷却部材を使用することで、従来中央部が高く、周辺部が低くなっていた基板温度分布を小さくできたことによる。   This is because a member with good thermal conductivity is used at the center of the contact surface, and a rear cooling member with a member with poor heat conductivity is used at the periphery. This is because the temperature distribution of the substrate was reduced.

また、図７に示すように、中央部の銅板５３ａと周辺部のセラミック板５３ｂを背面冷却部材５３の内部に配置しても、同様の効果がある。   Further, as shown in FIG. 7, the same effect can be obtained even if the central copper plate 53 a and the peripheral ceramic plate 53 b are arranged inside the back surface cooling member 53.

さらに、蒸着熱源が３箇所である成膜装置においても、本実施形態による背面冷却部材は、基板接触面の中央部３箇所に同様の構造をとることで、第１の実施形態と同様に基板温度が改善し、成膜位置精度を向上させることができた。   Further, in the film forming apparatus having three deposition heat sources, the back surface cooling member according to the present embodiment has the same structure as that of the first embodiment by adopting the same structure at the three central portions of the substrate contact surface. The temperature was improved and the film deposition position accuracy was improved.

本実施形態によれば、基板の裏面に密着する背面冷却部材に、部分的に熱伝導率の異なる異種材料を接合することで基板の冷却効率に差をつけ、基板温度分布を改善することができる。その結果、基板変形が小さくなり、成膜時にパターン形成用のマスクとのずれが改善されるため、着膜の位置精度や線幅精度が向上する。   According to this embodiment, it is possible to improve the substrate temperature distribution by making a difference in the cooling efficiency of the substrate by bonding different materials having different thermal conductivities to the back surface cooling member that is in close contact with the back surface of the substrate. it can. As a result, the deformation of the substrate is reduced, and the deviation from the mask for pattern formation is improved at the time of film formation, so that the positional accuracy and line width accuracy of the deposited film are improved.

図８は、第４の実施形態を示す。これは、蒸着熱源が中央部１箇所である成膜装置において、背面冷却部材６３の中央部と周辺部に２系統の冷却管６３ａ、６３ｂを加工した。そして、中央部には２０℃、周辺部には２５℃の冷媒を使用して、冷却能力の異なる２系統の配管を有する冷却手段によって背面冷却部材６３を冷却した。   FIG. 8 shows a fourth embodiment. In this film forming apparatus having a vapor deposition heat source at one central part, two cooling pipes 63a and 63b are processed in the central part and the peripheral part of the rear cooling member 63. Then, the back surface cooling member 63 was cooled by a cooling means having two systems of pipes having different cooling capacities, using a refrigerant of 20 ° C. in the central part and 25 ° C. in the peripheral part.

このように冷却効率に分布をもつ背面冷却部材を取り付けた成膜装置により蒸着成膜した結果、基板の温度分布が第１の実施形態と同様に改善し、パターン位置精度が向上した。これは、背面冷却部材に２系統の冷却管を加工して、接触面中央部の冷媒温度を周辺部の冷媒温度に比べて低く制御した背面冷却部材を使用することで、従来中央部が高く、周辺部が低くなっていた基板温度分布を小さくできたことによる。   As described above, as a result of the vapor deposition film formation by the film forming apparatus provided with the back surface cooling member having the distribution in the cooling efficiency, the temperature distribution of the substrate is improved as in the first embodiment, and the pattern position accuracy is improved. This is because the back surface cooling member is processed with two cooling pipes and the back surface cooling member in which the refrigerant temperature at the central portion of the contact surface is controlled to be lower than the refrigerant temperature at the peripheral portion is used. This is because the substrate temperature distribution which has been lowered in the peripheral portion can be reduced.

さらに、蒸着熱源が３箇所である成膜装置においても、本実施形態による背面冷却部材は、基板接触面の中央部３箇所に同様の冷却管を加工することで、第１の実施形態と同様に基板温度が改善し、成膜位置精度を向上させることができた。   Further, in the film forming apparatus having three deposition heat sources, the back surface cooling member according to the present embodiment is similar to the first embodiment by processing the same cooling pipes at the three central portions of the substrate contact surface. In addition, the substrate temperature was improved, and the deposition position accuracy was improved.

本実施形態によれば、基板の裏面に密着する背面冷却部材の冷却管の配置や冷却条件を変えて基板の冷却状況に差をつけることで、基板温度分布を小さく改善することができる。その結果、基板変形が小さくなり、成膜時にパターン形成用のマスクとのずれが改善されるため、着膜の位置精度や線幅精度が向上する。   According to the present embodiment, the substrate temperature distribution can be improved by changing the arrangement of the cooling pipes of the back surface cooling member that is in close contact with the back surface of the substrate and the cooling conditions to make a difference in the cooling state of the substrate. As a result, the deformation of the substrate is reduced, and the deviation from the mask for pattern formation is improved at the time of film formation, so that the positional accuracy and line width accuracy of the deposited film are improved.

第１の実施形態による成膜装置を示すもので、（ａ）はその主要部を示す模式断面図、（ｂ）、（ｃ）は背面冷却部材のみを示す断面図と底面図である。BRIEF DESCRIPTION OF THE DRAWINGS The film-forming apparatus by 1st Embodiment is shown, (a) is a schematic cross section which shows the principal part, (b), (c) is sectional drawing and a bottom view which show only a back surface cooling member. 図１の背面冷却部材における熱の流れを示す図である。It is a figure which shows the heat flow in the back surface cooling member of FIG. 一変形例を示す図である。It is a figure which shows one modification. 別の変形例を示す図である。It is a figure which shows another modification. 第２の実施形態による背面冷却部材を示すもので、（ａ）はその断面図、（ｂ）は底面図である。The back surface cooling member by 2nd Embodiment is shown, (a) is the sectional drawing, (b) is a bottom view. 第３の実施形態による背面冷却部材を示すもので、（ａ）はその断面図、（ｂ）は底面図である。The back surface cooling member by 3rd Embodiment is shown, (a) is the sectional drawing, (b) is a bottom view. 一変形例を示す図である。It is a figure which shows one modification. 第４の実施形態による背面冷却部材を示すもので、（ａ）はその断面図、（ｂ）は底面図である。The back surface cooling member by 4th Embodiment is shown, (a) is the sectional drawing, (b) is a bottom view. 蒸着熱源が中央１箇所である場合の基板の温度分布を示す図である。It is a figure which shows the temperature distribution of a board | substrate in case a vapor deposition heat source is one center. 蒸着熱源が３箇所である場合の基板の温度分布を示す図である。It is a figure which shows the temperature distribution of a board | substrate in case a vapor deposition heat source is three places.

符号の説明Explanation of symbols

１ 基板
２ マグネット
３、１３、２３、３３、４３、５３、６３ 背面冷却部材
４ マスク
５ トレイ
３ａ、２３ａ 凸部
１３ａ 凸ピン部
４３ａ、５３ａ 銅板
６３ａ、６３ｂ 冷却管 DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Magnet 3, 13, 23, 33, 43, 53, 63 Back surface cooling member 4 Mask 5 Tray 3a, 23a Convex part 13a Convex pin part 43a, 53a Copper plate 63a, 63b Cooling tube

Claims (5)

蒸発源から発生する成膜材料の蒸気を、マスクを介して基板に蒸着させる成膜装置において、
前記基板の成膜面と反対側の非成膜面に接触して前記基板を冷却する背面冷却部材と、
前記背面冷却部材を冷却する冷却手段と、
前記背面冷却部材の前記基板に対する接触面に、前記蒸発源による熱源位置に対応するように冷却効率の分布をもたせるための冷却効率制御手段と、を有することを特徴とする成膜装置。 In a film forming apparatus for depositing vapor of a film forming material generated from an evaporation source on a substrate through a mask,
A back surface cooling member that cools the substrate in contact with a non-film formation surface opposite to the film formation surface of the substrate;
Cooling means for cooling the back surface cooling member;
A film forming apparatus, comprising: cooling efficiency control means for providing a distribution of cooling efficiency on a contact surface of the back surface cooling member with respect to the substrate so as to correspond to a heat source position by the evaporation source. 前記冷却効率制御手段は、前記基板に対する前記背面冷却部材の接触面積に分布をもたせるために、前記背面冷却部材に形成された凸部を有することを特徴とする請求項１に記載の成膜装置。   2. The film forming apparatus according to claim 1, wherein the cooling efficiency control unit has a convex portion formed on the back surface cooling member in order to have a distribution in a contact area of the back surface cooling member with respect to the substrate. . 前記冷却効率制御手段は、前記背面冷却部材の表面粗さに分布をもたせるために、前記背面冷却部材に設けられた表面処理面であることを特徴とする請求項１に記載の成膜装置。   The film forming apparatus according to claim 1, wherein the cooling efficiency control unit is a surface treatment surface provided on the back surface cooling member in order to have a distribution in the surface roughness of the back surface cooling member. 前記冷却効率制御手段は、前記背面冷却部材の熱伝導率に分布をもたせるために、前記背面冷却部材に接合された異種材料であることを特徴とする請求項１に記載の成膜装置。   2. The film forming apparatus according to claim 1, wherein the cooling efficiency control unit is a dissimilar material bonded to the back surface cooling member in order to have a distribution in the thermal conductivity of the back surface cooling member. 前記冷却効率制御手段は、前記冷却手段の冷却能力に分布をもたせるために、前記背面冷却部材に設けられた冷却管であることを特徴とする請求項１に記載の成膜装置。   The film forming apparatus according to claim 1, wherein the cooling efficiency control unit is a cooling pipe provided in the back surface cooling member in order to have a distribution in the cooling capacity of the cooling unit.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169824A (en) * 1993-12-13 1995-07-04 Anelva Corp Substrate heating and cooling mechanism
JPH11186195A (en) * 1997-12-19 1999-07-09 Samsung Electron Co Ltd Method for forming thin film in semiconductor device
JP2002339066A (en) * 2001-05-15 2002-11-27 Canon Inc Thin oxide film deposition method
JP2004014246A (en) * 2002-06-05 2004-01-15 Sony Corp Organic film forming device and method
JP2004091913A (en) * 2002-07-10 2004-03-25 Sony Corp Film deposition system and film deposition method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169824A (en) * 1993-12-13 1995-07-04 Anelva Corp Substrate heating and cooling mechanism
JPH11186195A (en) * 1997-12-19 1999-07-09 Samsung Electron Co Ltd Method for forming thin film in semiconductor device
JP2002339066A (en) * 2001-05-15 2002-11-27 Canon Inc Thin oxide film deposition method
JP2004014246A (en) * 2002-06-05 2004-01-15 Sony Corp Organic film forming device and method
JP2004091913A (en) * 2002-07-10 2004-03-25 Sony Corp Film deposition system and film deposition method

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