JP2009252851A - Exposure apparatus, and device manufacturing method - Google Patents
Exposure apparatus, and device manufacturing method Download PDFInfo
- Publication number
- JP2009252851A JP2009252851A JP2008096617A JP2008096617A JP2009252851A JP 2009252851 A JP2009252851 A JP 2009252851A JP 2008096617 A JP2008096617 A JP 2008096617A JP 2008096617 A JP2008096617 A JP 2008096617A JP 2009252851 A JP2009252851 A JP 2009252851A
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- light
- grating
- exposure apparatus
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
Description
本発明は、露光装置及びデバイス製造方法に係り、更に詳しくは、半導体素子、液晶表示素子等のマイクロデバイス（電子デバイスなど）を製造するリソグラフィ工程で用いられる露光装置及び該露光装置を用いるデバイス製造方法に関する。 The present invention relates to an exposure apparatus and a device manufacturing method, and more particularly, to an exposure apparatus used in a lithography process for manufacturing a micro device (such as an electronic device) such as a semiconductor element or a liquid crystal display element, and a device manufacturing using the exposure apparatus. Regarding the method.
従来、半導体素子、液晶表示素子等のマイクロデバイス（電子デバイスなど）を製造するリソグラフィ工程では、ステップ・アンド・リピート方式の投影露光装置（いわゆるステッパ）又はステップ・アンド・スキャン方式の投影露光装置（いわゆるスキャニング・ステッパ（スキャナとも呼ばれる））などが比較的多く用いられている。 Conventionally, in a lithography process for manufacturing microdevices (electronic devices and the like) such as semiconductor elements and liquid crystal display elements, a step-and-repeat projection exposure apparatus (so-called stepper) or a step-and-scan projection exposure apparatus ( A so-called scanning stepper (also called a scanner)) is used relatively frequently.
この種の露光装置では、ウエハ又はガラスプレート等の被露光物体（以下、ウエハと総称する）上の複数のショット領域にレチクル（又はマスク）のパターンを転写するために、ウエハを保持するウエハステージはＸＹ２次元方向に例えばリニアモータ等により駆動される。このウエハステージの位置計測は、長期に渡って計測の安定性が良好で、高分解能なレーザ干渉計を用いて行われるのが、一般的であった。 In this type of exposure apparatus, a wafer stage that holds a wafer in order to transfer a reticle (or mask) pattern to a plurality of shot areas on an object to be exposed (hereinafter referred to as a wafer) such as a wafer or a glass plate. Is driven in the XY two-dimensional direction by, for example, a linear motor. The position measurement of the wafer stage is generally performed using a high-resolution laser interferometer, which has good measurement stability over a long period of time.
しかるに、半導体素子の高集積化に伴う、パターンの微細化により、より高精度なステージの位置制御が要求されるようになり、今や、レーザ干渉計のビーム路上の雰囲気の温度変化及び／又は温度勾配の影響で発生する空気揺らぎに起因する計測値の短期的な変動がオーバレイバジェット中の大きなウエイトを占めるようになっている。 However, due to the miniaturization of patterns due to the high integration of semiconductor elements, more accurate position control of the stage is required, and now the temperature change and / or temperature of the atmosphere on the beam path of the laser interferometer Short-term fluctuations in measured values due to air fluctuations that occur due to the influence of gradients occupy a large weight in the overlay budget.
一方、ステージの位置計測に使用されるレーザ干渉計以外の計測装置として、エンコーダがあるが、エンコーダは、計測においてスケール（グレーティングなど）を使用するため、格子ピッチのドリフト、固定位置ドリフト、あるいは熱膨張等などによりそのスケールの機械的な長期安定性に欠ける。このため、エンコーダは、レーザ干渉計に比べて計測値のリニアリティに欠け、長期安定性に劣るという欠点を有している。 On the other hand, there is an encoder as a measuring device other than the laser interferometer used for measuring the position of the stage. However, since the encoder uses a scale (grating, etc.) in the measurement, the grating pitch drift, fixed position drift, or thermal Lack of mechanical long-term stability of the scale due to expansion or the like. For this reason, the encoder has the disadvantage that it lacks the linearity of the measured value and is inferior in long-term stability compared to the laser interferometer.
上述のレーザ干渉計とエンコーダとの欠点に鑑みて、レーザ干渉計とエンコーダ（回折格子を用いる位置検出センサ）とを併用して、ステージの位置を計測する装置が、種々提案されている（例えば特許文献１、２等参照）。特に、最近では、計測分解能が、レーザ干渉計と同程度以上のエンコーダが出現しており（例えば、特許文献３等参照）、上述のレーザ干渉計とエンコーダとを組み合わせる技術が注目されるようになってきた。 In view of the drawbacks of the laser interferometer and the encoder described above, various apparatuses for measuring the position of the stage using both the laser interferometer and the encoder (position detection sensor using a diffraction grating) have been proposed (for example, (See Patent Documents 1 and 2). In particular, recently, an encoder having a measurement resolution equal to or higher than that of a laser interferometer has emerged (for example, see Patent Document 3), and a technique for combining the above-described laser interferometer and encoder is attracting attention. It has become.
しかるに、干渉計のミラー又はエンコーダのスケール（グレーティングなど）は、ステージの外面、例えば側面などに設けられた場合、そのステージが加速した際のステージの微小変形に伴い、ステージ上の位置（ステージ上の所定点との位置関係）が変化してしまい、これがステージの位置計測精度を低下させる蓋然性が高い。また、たとえば、スループットを向上させる観点から、スキャニング・ステッパにおいてウエハステージの加速中に露光を開始するという新技術が提案されたとしても、上記のステージの加速に伴うミラー又はスケールのステージ上での位置の変化が、上記新技術の実施のための障害要因となるおそれがある。 However, when the scale of the interferometer or encoder (grating, etc.) is provided on the outer surface of the stage, such as the side surface, the position on the stage (on the stage) (The positional relationship with the predetermined point) changes, and this is likely to reduce the position measurement accuracy of the stage. In addition, for example, from the viewpoint of improving throughput, even if a new technique is proposed in which exposure is started during the acceleration of the wafer stage in the scanning stepper, even if the stage on the mirror or scale accompanying the acceleration of the above stage is proposed. The change in position may be an obstacle for the implementation of the new technology.
本発明は、上述した事情の下になされたものであり、第１の観点からすると、エネルギビームの照射によって物体にパターンを形成する露光装置であって、物体を保持して実質的に所定平面に沿って移動可能で、前記物体の裏面側で前記所定平面に実質的に平行な面に沿ってグレーティングが配置され、所定波長の光が内部を進行可能な移動体と；前記エネルギビームの照射点である露光位置に対応する第１計測位置で、前記所定平面と交差する前記移動体の一側面を介して前記移動体の外部から前記グレーティングに前記所定波長の第１計測光を入射させ、該第１計測光に由来する前記グレーティングからの回折光を受光して、前記移動体の前記所定平面内の計測方向に関する第１位置情報を計測する第１計測装置と；前記露光位置から一軸方向に離間して配置され、前記移動体上のマーク又は前記移動体に保持された物体上のマークを検出するマーク検出系と；前記第１計測装置とともに計測システムを構成し、前記マーク検出系の検出中心に対応する第２計測位置で、前記移動体の一側面を介して前記移動体の外部から前記グレーティングに前記所定波長の第２計測光を入射させ、該第２計測光に由来する前記グレーティングからの回折光を受光して、前記移動体の計測方向に関する第２位置情報を計測する第２計測装置と；前記計測システムからの前記位置情報に基づいて、前記移動体を駆動する駆動システムと；を備える露光装置である。 The present invention has been made under the circumstances described above. From the first viewpoint, the present invention is an exposure apparatus that forms a pattern on an object by irradiation with an energy beam, and holds the object and has a substantially predetermined plane. A movable body that is movable along the surface of the object and has a grating disposed along a surface substantially parallel to the predetermined plane on the back surface side of the object, and the irradiation of the energy beam. First measurement light having the predetermined wavelength is incident on the grating from the outside of the moving body through one side surface of the moving body that intersects the predetermined plane at a first measurement position corresponding to an exposure position that is a point, A first measurement device that receives diffracted light from the grating derived from the first measurement light and measures first position information regarding a measurement direction within the predetermined plane of the movable body; and one from the exposure position; A mark detection system that is arranged apart from each other and detects a mark on the movable body or a mark on an object held by the movable body; and a measurement system that constitutes the measurement system together with the first measurement device, and the mark detection system The second measurement light having the predetermined wavelength is incident on the grating from the outside of the moving body through one side surface of the moving body at the second measurement position corresponding to the detection center of A second measuring device that receives diffracted light from the grating and measures second position information related to the measurement direction of the moving body; and a drive that drives the moving body based on the position information from the measuring system. An exposure apparatus comprising: a system;
ここで、第１計測装置と第２計測装置とは、移動体の同一の側面を介して、第１、第２計測光を、それぞれグレーティングに入射させるものであっても良いし、移動体の互いに反対側に位置する異なる２つの側面をそれぞれ介して、第１、第２計測光を、グレーティングに入射させるものであっても良い。あるいは、第１計測装置と第２計測装置とは、移動体の相互に交差する側面をそれぞれ介して、第１、第２計測光を、それぞれグレーティングに入射させるものであっても良い。 Here, the first measuring device and the second measuring device may be configured to cause the first and second measurement lights to enter the grating through the same side surface of the moving body, respectively, The first and second measurement light beams may be incident on the grating through two different side surfaces located on opposite sides. Alternatively, the first measurement device and the second measurement device may be configured to cause the first and second measurement lights to enter the grating, respectively, through the side surfaces of the moving body that intersect each other.
これによれば、第１計測位置での移動体の第１位置情報の計測において、回折光が移動体内を通過する光路上では、移動体の周辺雰囲気の揺らぎの影響を受けることがない。さらに、移動体の外部についても、回折光の光路は近接し、ほぼ同じ雰囲気中を伝播するので、周辺雰囲気の揺らぎの影響は小さい。そのため、第１計測位置での移動体の第１位置情報を高精度に計測することができる。また、第２計測位置での移動体の第２位置情報を高精度に計測することができる。さらに、駆動システムにより、第１及び第２計測装置から構成される計測システムからの位置情報に基づいて、移動体が駆動される。従って、第１計測位置では第１位置情報に、第２計測位置では第２位置情報に、それぞれ基づいて移動体を駆動することができるので、両計測位置において、高精度な移動体の駆動制御が可能となる。 According to this, in the measurement of the first position information of the moving body at the first measurement position, the diffracted light is not affected by the fluctuation of the ambient atmosphere of the moving body on the optical path through which the moving body passes. Furthermore, since the optical path of the diffracted light is close to the outside of the moving body and propagates in almost the same atmosphere, the influence of fluctuations in the surrounding atmosphere is small. Therefore, the first position information of the moving body at the first measurement position can be measured with high accuracy. In addition, the second position information of the moving body at the second measurement position can be measured with high accuracy. Further, the moving body is driven by the drive system based on the position information from the measurement system configured by the first and second measurement devices. Therefore, since the moving body can be driven based on the first position information at the first measurement position and the second position information at the second measurement position, the highly accurate driving control of the moving body can be performed at both measurement positions. Is possible.
本発明は、第２の観点からすると、本発明の露光装置を用いて前記物体として基板を露光することと；前記露光された基板を現像することと；を含むデバイス製造方法である。 According to a second aspect of the present invention, there is provided a device manufacturing method including: exposing a substrate as the object using the exposure apparatus of the present invention; and developing the exposed substrate.
以下、本発明の一実施形態について、図１〜図４に基づいて説明する。 Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
図１には、一実施形態に係る露光装置１００の概略構成が示されている。露光装置１００は、ステップ・アンド・スキャン方式の縮小投影露光装置である。露光装置１００は、光源及び照明光学系を含み、照明光ＩＬによりレチクルＲを照明する照明系１２、レチクルＲを保持するレチクルステージＲＳＴ、投影光学系ＰＬ、アライメント系ＡＬＧ、ウエハＷを保持するウエハステージＷＳＴ、及び装置全体を統括制御する主制御装置２０（図１では不図示、図４参照）等を備えている。以下においては、投影光学系ＰＬの光軸ＡＸと平行な方向をＺ軸方向、これに直交する面内でレチクルＲとウエハＷとが相対走査される方向をＹ軸方向、Ｚ軸及びＹ軸に直交する方向をＸ軸方向とし、Ｘ軸、Ｙ軸、及びＺ軸回りの回転（傾斜）方向をそれぞれθｘ、θｙ、及びθｚ方向として説明を行う。
FIG. 1 shows a schematic configuration of an
照明系１２は、レチクルブラインド（不図示）で規定されたレチクルＲ上でＸ軸方向に延びるスリット状の照明領域を照明光ＩＬによりほぼ均一な照度で照明する。ここで、照明光ＩＬとしては、一例としてＡｒＦエキシマレーザ光（波長１９３ｎｍ）が用いられている。
The
レチクルステージＲＳＴ上には、回路パターン等が描かれたレチクルＲが、例えば真空吸着により、固定されている。レチクルステージＲＳＴは、レチクルＲの位置制御のため、レチクルステージ駆動系１３（図１では不図示、図４参照）により、照明系１２の光軸（後述する投影光学系ＰＬの光軸ＡＸに一致）に垂直なＸＹ平面内で微少駆動可能であるとともに、所定の走査方向（図１における紙面内左右方向、すなわちＹ軸方向）に所定の走査速度で駆動可能となっている。 On reticle stage RST, reticle R on which a circuit pattern or the like is drawn is fixed, for example, by vacuum suction. Reticle stage RST coincides with the optical axis of illumination system 12 (to be described later, optical axis AX of projection optical system PL) by reticle stage drive system 13 (not shown in FIG. 1, see FIG. 4) for position control of reticle R. 1), and can be driven at a predetermined scanning speed in a predetermined scanning direction (left-right direction in FIG. 1, ie, the Y-axis direction).
レチクルステージＲＳＴのＸＹ平面内の位置は、レチクルレーザ干渉計（以下、「レチクル干渉計」という）１１によって、レチクルステージＲＳＴの側面（鏡面加工された端面）を介して、例えば０．５〜１ｎｍ程度の分解能で、常時検出される。レチクル干渉計１１からのレチクルステージＲＳＴの位置情報は、主制御装置２０（図４参照）に送られている。主制御装置２０は、レチクルステージＲＳＴの位置情報に基づいてレチクルステージ駆動系１３を介してレチクルステージＲＳＴを駆動する。
The position of the reticle stage RST in the XY plane is, for example, 0.5 to 1 nm by the reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 11 via the side surface (mirror-finished end surface) of the reticle stage RST. It is always detected with a resolution of the order. Position information of reticle stage RST from
投影光学系ＰＬとしては、例えばＺ軸方向と平行な光軸ＡＸに沿って配列される複数のレンズ（レンズエレメント）から成る屈折光学系が用いられている。投影光学系ＰＬは、例えば両側テレセントリックで所定の投影倍率（例えば１／４倍又は１／５倍）を有する。このため、照明系１２からの照明光ＩＬによって照明領域が照明されると、投影光学系ＰＬの第１面（物体面）とパターン面がほぼ一致して配置されるレチクルＲを通過した照明光ＩＬにより、投影光学系ＰＬを介してその照明領域内のレチクルＲの回路パターンの縮小像（回路パターンの一部の縮小像）が、その第２面（像面側）に配置される、表面にレジスト（感応剤）が塗布されたウエハＷ上の前記照明領域に共役な領域（露光領域ＩＡ）に形成される。そしてレチクルステージＲＳＴとウエハステージＷＳＴとの同期駆動によって、照明領域（照明光ＩＬ）に対してレチクルＲを走査方向（Ｙ軸方向）に相対移動するとともに、露光領域ＩＡ（照明光ＩＬ）に対してウエハＷを走査方向（Ｙ軸方向）に相対移動することで、ウエハＷ上の１つのショット領域（区画領域）の走査露光が行われ、そのショット領域にレチクルのパターンが形成される。すなわち、本実施形態では、照明系１２、レチクルＲ及び投影光学系ＰＬによってウエハＷ上にパターンが生成され、照明光ＩＬによるウエハＷ上の感応層（レジスト層）の露光によってウエハＷ上にそのパターンが形成される。
As the projection optical system PL, for example, a refractive optical system including a plurality of lenses (lens elements) arranged along an optical axis AX parallel to the Z-axis direction is used. The projection optical system PL is, for example, both-side telecentric and has a predetermined projection magnification (for example, 1/4 times or 1/5 times). For this reason, when the illumination area is illuminated by the illumination light IL from the
投影光学系ＰＬから−Ｙ方向に所定距離離間した位置には、アライメント系ＡＬＧが設置されている。ここで、アライメント系ＡＬＧが有する光軸ＡＬＸは、投影光学系ＰＬの光軸ＡＸと平行であり、且つ、Ｙ軸に直交する。アライメント系ＡＬＧとして、例えば、画像処理方式のＦＩＡ（Field Image Alignment）系のセンサが用いられる。このＦＩＡ系は、ウエハ上のレジストを感光させないブロードバンドな検出光束を検出対象のマーク（ウエハＷ上のアライメントマーク又は基準マーク板上の基準マーク）に照射し、そのマークからの反射光により受光面に結像されたマークの像と指標（不図示）の像とを撮像素子（ＣＣＤ）等を用いて撮像し、それらの撮像信号を出力する。撮像信号は不図示の信号処理装置に送られ、その信号処理装置により、指標中心（検出中心）に対するマークの位置ずれ量（位置情報）が、主制御装置２０（図４参照）に供給される。 An alignment system ALG is installed at a position separated from the projection optical system PL by a predetermined distance in the −Y direction. Here, the optical axis ALX of the alignment system ALG is parallel to the optical axis AX of the projection optical system PL and is orthogonal to the Y axis. As the alignment system ALG, for example, an image processing type FIA (Field Image Alignment) type sensor is used. This FIA system irradiates a detection target mark (an alignment mark on the wafer W or a reference mark on a reference mark plate) with a broadband detection light beam that does not expose the resist on the wafer, and receives light from the reflected light from the mark. The image of the mark formed on the image and the image of the index (not shown) are picked up using an image pickup device (CCD) or the like, and the image pickup signals are output. The imaging signal is sent to a signal processing device (not shown), and the signal processing device supplies a mark position shift amount (position information) with respect to the index center (detection center) to the main controller 20 (see FIG. 4). .
ウエハステージＷＳＴは、その上面にて静電チャック機構（不図示）によりウエハホルダＷＨを吸着保持している。また、ウエハホルダＷＨは、該ウエハホルダＷＨが有する静電チャック機構により、ウエハＷを吸着保持する。ウエハステージＷＳＴは、図１に示されるように、ステージ本体１４と、その上に固定されたウエハテーブルＷＴＢと、静電チャック機構（不図示）によってウエハテーブルＷＴＢに対して着脱自在のウエハホルダＷＨと、を含んでいる。なお、ウエハホルダＷＨをウエハテーブルＷＴＢに固定する保持機構は静電チャック機構に限らず、例えば真空チャック機構あるいはクランプ機構などでも良い。また、ウエハホルダＷＨは、ウエハテーブルＷＴＢと一体に形成されても良いし、静電チャック機構と異なる機構、例えば真空チャック機構などによってウエハＷを保持しても良い。
Wafer stage WST attracts and holds wafer holder WH on its upper surface by an electrostatic chuck mechanism (not shown). Further, the wafer holder WH attracts and holds the wafer W by an electrostatic chuck mechanism included in the wafer holder WH. As shown in FIG. 1, wafer stage WST includes a stage
ステージ本体１４（ウエハステージＷＳＴ）は、例えばリニアモータ及びボイスコイルモータ（ＶＣＭ）などを含むステージ駆動系２７（図４参照）により、Ｘ軸方向、Ｙ軸方向、Ｚ軸方向、θｘ方向、θｙ方向、及びθｚ方向の６自由度方向に駆動される。これにより、ウエハＷは６自由度方向に移動可能である。なお、ステージ本体１４はＸ軸方向、Ｙ軸方向、及びθｚ方向に駆動可能とし、かつウエハテーブルＷＴＢを少なくともＺ軸方向、θｘ方向、及びθｙ方向に微動可能としても良い。この場合、ウエハテーブルＷＴＢを６自由度方向に微動可能としても良い。
The stage main body 14 (wafer stage WST) is, for example, driven by a stage drive system 27 (see FIG. 4) including a linear motor, a voice coil motor (VCM), and the like, in the X-axis direction, Y-axis direction, Z-axis direction, θx direction, θy And 6 degrees of freedom in the θz direction. Thereby, the wafer W can move in the direction of six degrees of freedom. The stage
ウエハテーブルＷＴＢは、透明な部材（例えば、ガラス等）から成る、平面視（上方から見て）、略正方形の板状部材である。ウエハテーブルＷＴＢの上面の中央部にウエハホルダＷＨが保持されている。ウエハテーブルＷＴＢは、その内部を後述するエンコーダシステムの計測光が進行するので、少なくともこの計測光に対して透明な透明部材で構成される。また、ウエハテーブルＷＴＢは、ＸＹ平面と実質的に平行な第１面（上面）及び第２面（下面）と、Ｘ軸方向にそれぞれ延びる一対の側面及びＹ軸方向にそれぞれ延びる一対の側面とを有する。本実施形態では、後述するように、４つの側面（以下では、端面とも呼ぶ）から、計測用のレーザ光（計測光）がウエハテーブルＷＴＢの内部に入射する又は外部に射出される。なお、透明部材は、低熱膨張率の材料であることが好ましく、本実施形態では一例として合成石英などが用いられる。また、ウエハテーブルＷＴＢはその全体が透明部材で構成されても良いが、計測用のレーザ光が通るウエハテーブルＷＴＢの一部のみを透明部材で構成しても良い。 Wafer table WTB is a substantially square plate-like member that is made of a transparent member (for example, glass or the like) in plan view (viewed from above). Wafer holder WH is held at the center of the upper surface of wafer table WTB. Wafer table WTB is composed of a transparent member transparent to at least this measurement light because measurement light of an encoder system, which will be described later, travels inside. Wafer table WTB includes a first surface (upper surface) and a second surface (lower surface) substantially parallel to the XY plane, a pair of side surfaces extending in the X-axis direction, and a pair of side surfaces extending in the Y-axis direction, respectively. Have In this embodiment, as will be described later, laser light for measurement (measurement light) is incident on the inside of wafer table WTB or emitted to the outside from four side surfaces (hereinafter also referred to as end surfaces). The transparent member is preferably a material having a low coefficient of thermal expansion, and synthetic quartz or the like is used as an example in this embodiment. Wafer table WTB may be entirely formed of a transparent member, but only a part of wafer table WTB through which measurement laser light passes may be formed of a transparent member.
ウエハテーブルＷＴＢの−Ｙ側端面及び＋Ｙ側端面は、図３（Ａ）に示されるように、Ｘ軸方向に延び、かつＸＺ平面に対して所定角度（θ（０°＜θ＜９０°））傾斜している。すなわち、両端面は、ウエハテーブルＷＴＢの上面に対して鋭角（９０°−θ）をなす。同様に、ウエハテーブルＷＴＢの−Ｘ側端面及び＋Ｘ側端面は、Ｙ軸方向に延び、かつＹＺ平面に対して所定角度（θ）傾斜している。 As shown in FIG. 3A, the −Y side end surface and the + Y side end surface of wafer table WTB extend in the X-axis direction and have a predetermined angle (θ (0 ° <θ <90 °) with respect to the XZ plane. ) Inclined. That is, both end faces form an acute angle (90 ° −θ) with respect to the upper surface of wafer table WTB. Similarly, the −X side end surface and the + X side end surface of wafer table WTB extend in the Y-axis direction and are inclined at a predetermined angle (θ) with respect to the YZ plane.
ウエハテーブルＷＴＢの上面中央部（ウエハホルダＷＨよりも一回り大きい部分）には、図１に示されるように、Ｘ軸方向を周期方向とするグレーティングと、Ｙ軸方向を周期方向とするグレーティングと、を組み合わせた２次元グレーティング（以降、単にグレーティングと呼ぶ）２４が水平に設置されている。グレーティング２４の上面は、保護部材としてのカバーガラス５１によって覆われている。本実施形態では、カバーガラス５１の上面に、ウエハホルダＷＨを吸着保持する前述の静電チャック機構が設けられている。なお、本実施形態では、ウエハテーブルＷＴＢの上面のほぼ全面を覆うようにカバーガラス５１を設けているが、グレーティング２４を含む上面の一部のみを覆うようにカバーガラス５１を設けても良い。また、本実施形態では、カバーガラス５１をウエハテーブルＷＴＢと同一の材料で構成するが、他の材料、例えば金属、セラミックス、あるいは薄膜などで構成しても良い。
At the center of the upper surface of wafer table WTB (a portion slightly larger than wafer holder WH), as shown in FIG. 1, a grating having a periodic direction in the X-axis direction, a grating having a periodic direction in the Y-axis direction, A two-dimensional grating (hereinafter simply referred to as a “grating”) 24 in combination is installed horizontally. The upper surface of the grating 24 is covered with a
なお、ウエハテーブルＷＴＢはカバーガラス５１を含むものとしても良い。この場合、グレーティング２４の形成面がウエハテーブルＷＴＢの最上面ではなくその内部に配置されることになる。また、グレーティング２４を、ウエハホルダの裏面に設けても良い。さらに、カバーガラスなどの保護部材を設ける代わりに、例えばウエハホルダなどで代用しても良い。
Wafer table WTB may include
ウエハステージＷＳＴのＸＹ平面内における、すなわちＸ及びＹ軸方向に関する位置情報は、後述するエンコーダシステムにより、グレーティング２４を用いて、常時検出されている。検出されるウエハステージＷＳＴの位置情報は主制御装置２０に送られる。主制御装置２０は、この位置情報に基づいて、前述したリニアモータ及びボイスコイルモータを駆動して、ウエハステージＷＳＴの位置を制御する。
Position information of wafer stage WST in the XY plane, that is, in the X and Y axis directions, is always detected using a grating 24 by an encoder system described later. The detected position information of wafer stage WST is sent to
また、露光装置１００では、上述のエンコーダシステムとは独立に、ウエハテーブルＷＴＢに固定された移動鏡１７を介して、ウエハテーブルＷＴＢ（ウエハＷ）の全６自由度（Ｘ，Ｙ，Ｚ，θｘ，θｙ，θｚ）方向に関する位置情報を計測するためのレーザ干渉計システム１８（以下、適宜干渉計システムと略述する）が設けられている。ここで、実際には、ウエハテーブルＷＴＢ上には、Ｘ軸に垂直な反射面を有し、Ｙ軸方向に延びるＸ移動鏡と、Ｙ軸に垂直な反射面を有し、Ｘ軸方向に延びるＹ移動鏡とが設けられ、これに対応して、Ｘ移動鏡、Ｙ移動鏡にそれぞれ測長ビームを照射するＸ干渉計、Ｙ干渉計が、それぞれ設けられる。Ｘ干渉計、Ｙ干渉計としては、測長軸を複数有する多軸干渉計が用いられており、主制御装置２０は、Ｘ干渉計及びＹ干渉計の計測値に基づいて、ウエハテーブルＷＴＢ（ウエハステージＷＳＴ）のＸ軸方向の位置及びＹ軸方向の位置に加え、θｘ、θｙ、及びθｚ方向の位置情報（回転情報）をも計測することができる。また、干渉計システム１８は、ウエハテーブルＷＴＢに固定されたＸＹ平面に対して４５度傾斜した不図示の反射面、及び投影光学系ＰＬを保持する不図示のメインフレームに固定された反射面を介してウエハテーブルＷＴＢ（ウエハステージＷＳＴ）のＺ位置を計測する、Ｚ干渉計をも備えている。
Further, in the
本実施形態では、主制御装置２０は、露光時などにウエハテーブルＷＴＢ（ウエハステージＷＳＴ）のＸ軸方向及びＹ軸方向の位置を、通常、後述するエンコーダシステムの計測値に基づいて制御し、干渉計システム１８のＸ干渉計、Ｙ干渉計の計測値は、補助的に用いる。すなわち、主制御装置２０は、後述するエンコーダシステムの各エンコーダの計測領域から外れる位置に移動した場合に、干渉計システム１８のＸ干渉計、Ｙ干渉計の計測値に基づいてウエハテーブルＷＴＢ（ウエハステージＷＳＴ）のＸ軸方向及びＹ軸方向の位置を制御する。また、主制御装置２０は、エンコーダシステムのいずれかのエンコーダの出力異常が発生した場合などに、バックアップとして、干渉計システム１８のＸ干渉計及び／又はＹ干渉計の計測値を用いる。
In the present embodiment,
さらに、露光装置１００には、投影光学系ＰＬの直下でウエハＷの面位置（Ｚ軸方向の位置）を検出するための、例えば特開平６−２８３４０３号公報（対応する米国特許第５，４４８，３３２号明細書）等に開示される多点焦点位置検出系から成るフォーカスセンサＡＦ（図４参照）が設けられている。このフォーカスセンサＡＦの出力が主制御装置２０に供給され、主制御装置２０はウエハステージＷＳＴをＺ軸方向、θｘ方向及びθｙ方向に微動していわゆるフォーカスレベリング制御を行う。
Further, in the
図４には、露光装置１００の制御系の主要な構成が示されている。制御系は、主制御装置２０を中心として構成されている。制御装置２０（図４参照）は、ワークステーション（又はマイクロコンピュータ）等を含み、上記検出系など、露光装置１００の構成各部を統括制御する。
FIG. 4 shows the main configuration of the control system of the
次に、ウエハステージＷＳＴの位置計測に用いられるエンコーダシステム１６（図４参照）の構成について説明する。本実施形態のエンコーダシステムは、前述のグレーティング２４と、グレーティング２４に計測用のレーザ光（計測光）Ｌｘ１，Ｌｙ１１，Ｌｙ１２をそれぞれ照射する光源１６Ｘａ，１６Ｙａ１，１６Ｙａ２（光源１６Ｙａ１，１６Ｙａ２は、図１及び図３（Ａ）〜図３（Ｃ）では不図示、図２（Ａ）参照）と、グレーティング２４からの複数の回折光Ｌｘ２，Ｌｙ２１，Ｌｙ２２をそれぞれ受光する光検出器１６Ｘｂ，１６Ｙｂ１，１６Ｙｂ２（光検出器１６Ｙｂ１，１６Ｙｂ２は、図１及び図３（Ａ）〜図３（Ｃ）では不図示、図２（Ａ）参照）と、を備えている。光検出器１６Ｘｂ，１６Ｙｂ１，１６Ｙｂ２は、それぞれ複数の回折光Ｌｘ２，Ｌｙ２１，Ｌｙ２２を集光して干渉光を生成するための回折格子と、生成された干渉光を受光するための受光素子、例えばＣＣＤと、を含む。
Next, the configuration of encoder system 16 (see FIG. 4) used for position measurement of wafer stage WST will be described. The encoder system of the present embodiment includes the above-described
図２（Ａ）には、露光領域ＩＡ及びアライメント系ＡＬＧの光軸ＡＬＸと、光源１６Ｘａ，１６Ｙａ１，１６Ｙａ２と、光検出器１６Ｘｂ，１６Ｙｂ１，１６Ｙｂ２と、の位置関係が、斜視図にて示されている。光源１６Ｘａと光検出器１６Ｘｂは、露光領域ＩＡの中心の直下の点ＩＡａ（図２（Ｂ）参照）から−Ｙ側及び＋Ｙ側にほぼ等間隔離れた位置に配置されている。光源１６Ｙａ１と光検出器１６Ｙｂ１は、露光領域ＩＡの中心の直下の点ＩＡａ（以下、適宜露光領域ＩＡの中心ＩＡａとも記述する）から＋Ｘ側及び−Ｘ側にほぼ等間隔離れた位置に配置されている。ここで、露光領域ＩＡの中心ＩＡａは、ＸＹ平面内で投影光学系ＰＬの光軸ＡＸと一致している。光源１６Ｙａ２と光検出器１６Ｙｂ２は、アライメント系ＡＬＧの検出中心ＡＬａ（図２（Ｃ）参照）から＋Ｘ側及び−Ｘ側にほぼ等間隔離れた位置に配置されている。ここで、アライメント系ＡＬＧの検出中心ＡＬａは、ＸＹ平面内でアライメント系ＡＬＧの光軸ＡＬＸと一致し、ウエハＷ上のアライメントマークを検出するアライメント計測時には検出中心ＡＬａを基準にウエハステージＷＳＴが位置決めされる。 2A is a perspective view showing the positional relationship between the exposure area IA and the optical axis ALX of the alignment system ALG, the light sources 16Xa, 16Ya 1 and 16Ya 2 and the photodetectors 16Xb, 16Yb 1 and 16Yb 2 . Is shown. The light source 16Xa and the light detector 16Xb are arranged at substantially equal intervals on the −Y side and the + Y side from a point IAa (see FIG. 2B) immediately below the center of the exposure area IA. The light source 16Ya 1 and the light detector 16Yb 1 are located at substantially equal intervals on the + X side and the −X side from a point IAa immediately below the center of the exposure area IA (hereinafter also referred to as the center IAa of the exposure area IA as appropriate) Has been placed. Here, the center IAa of the exposure area IA coincides with the optical axis AX of the projection optical system PL in the XY plane. The light source 16Ya 2 and the light detector 16Yb 2 are arranged at substantially equal intervals on the + X side and the −X side from the detection center ALa (see FIG. 2C) of the alignment system ALG. Here, the detection center ALa of the alignment system ALG coincides with the optical axis ALX of the alignment system ALG in the XY plane, and the wafer stage WST is positioned with reference to the detection center ALa at the time of alignment measurement for detecting the alignment mark on the wafer W. Is done.
グレーティング２４と光源１６Ｘａと受光系１６Ｘｂとを用いることにより、ウエハテーブルＷＴＢ（ウエハＷ）のＸ軸方向に関する位置情報を検出することができる。これらの要素を含んで構成されるエンコーダを、Ｘエンコーダ１６Ｘと呼ぶ。図２（Ａ）及び図３（Ａ）に示されるように、光源１６Ｘａは計測光Ｌｘ１を、ＸＹ平面内においてＹ軸に平行に、ＹＺ平面においてＹ軸に対して角θを成す方向に射出する。計測光Ｌｘ１は、ウエハテーブルＷＴＢの−Ｙ側の端面に垂直に入射し、ウエハテーブルＷＴＢの内部に進入する。進入した計測光Ｌｘ１は、ウエハテーブルＷＴＢの内部を伝播し、グレーティング２４にＹＺ平面内において入射角（９０°−θ）で入射する。ここで、図２（Ｂ）に示されるように、計測光Ｌｘ１のグレーティング２４上での照射点が、常に、露光領域ＩＡの中心の直下の点ＩＡａに位置するように、光源１６Ｘａの設置位置、計測光Ｌｘ１の射出角、及びウエハテーブルＷＴＢの端面の傾斜角θ、が定められている。
By using the
計測光Ｌｘ１が、グレーティング２４に入射し、そのＸ軸方向を周期方向とするグレーティングによって反射・回折されることにより、複数の回折光が発生する。図２（Ａ）及び図２（Ｂ）には、±１次の回折光Ｌｘ２が図示されている。これら±１次の回折光Ｌｘ２は、グレーティング２４から、図３（Ａ）に示されるように、ＹＺ平面内において射出角（９０°−θ）を成し、且つ、図２（Ｂ）に示されるように、ＸＹ平面内においてＹ軸に平行な中心軸に関して互いに絶対値が等しい（ただし符号が異なる）回折角を成す方向へ射出される。なお、これらの回折光は、図３（Ａ）〜図３（Ｃ）では、紙面垂直方向に重なっている。 The measurement light Lx1 enters the grating 24 and is reflected and diffracted by the grating having the X-axis direction as a periodic direction, thereby generating a plurality of diffracted lights. 2A and 2B show ± first-order diffracted light Lx2. These ± 1st-order diffracted beams Lx2 form an emission angle (90 ° −θ) in the YZ plane as shown in FIG. 3A from the grating 24, and also shown in FIG. As shown in the figure, the light beams are emitted in directions that form diffraction angles having the same absolute value (but different in sign) from each other with respect to the central axis parallel to the Y axis in the XY plane. Note that these diffracted lights overlap in the direction perpendicular to the paper surface in FIGS. 3 (A) to 3 (C).
回折光Ｌｘ２は、ウエハテーブルＷＴＢの＋Ｙ側の端面から外部に射出され、光検出器１６Ｘｂによって受光される。光検出器１６Ｘｂは、その内部に設けられた回折格子を用いて、回折光Ｌｘ２を集光、合成して干渉光を発生させ、その強度を検出する。検出結果は、主制御装置２０に送られる。主制御装置２０は、受信した検出結果から、ウエハテーブルＷＴＢ（ウエハＷ）のＸ軸方向に関する位置情報を算出する。ここで、Ｘエンコーダ１６Ｘの計測光Ｌｘ１の光路は、図２（Ｂ）からもわかるように、Ｚ軸方向から見て（ＸＹ平面内において）その計測方向（Ｘ軸方向）と直交している。
The diffracted light Lx2 is emitted to the outside from the + Y side end surface of the wafer table WTB, and is received by the photodetector 16Xb. The photodetector 16Xb collects and synthesizes the diffracted light Lx2 using a diffraction grating provided therein, generates interference light, and detects its intensity. The detection result is sent to the
同様に、グレーティング２４と光源１６Ｙａ１と受光系１６Ｙｂ１とを用いることにより、ウエハテーブルＷＴＢ（ウエハＷ）のＹ軸方向に関する位置情報を検出することができる。これらの要素を含んで構成されるエンコーダを、Ｙエンコーダ１６Ｙ１と呼ぶ。図２（Ａ）に示されるように、光源１６Ｙａ１は、計測光Ｌｙ１１を、ＸＹ平面内においてＸ軸に平行に、ＸＺ平面においてＸ軸に対して角θを成す方向に射出する。計測光Ｌｙ１１は、ウエハテーブルＷＴＢの＋Ｘ側の端面に垂直に入射し、ウエハテーブルＷＴＢの内部に進入する。進入した計測光Ｌｙ１１は、ウエハテーブルＷＴＢの内部を伝播し、グレーティング２４にＸＺ平面内において入射角（９０°−θ）で入射する。ここで、図２（Ｂ）に示されるように、計測光Ｌｙ１１のグレーティング２４上での照射点が、常に、露光領域ＩＡの中心の直下の点ＩＡａに位置するように、光源１６Ｙａ１の設置位置、計測光Ｌｙ１１の射出角、及びウエハテーブルＷＴＢの端面の傾斜角θ、が定められている。
Similarly, by using the
計測光Ｌｙ１１が、グレーティング２４に入射し、そのＹ軸方向を周期方向とするグレーティングによって反射・回折されることにより、複数の回折光が発生する。図２（Ａ）及び図２（Ｂ）には、±１次の回折光Ｌｙ２１が図示されている。これら±１次の回折光Ｌｙ２１は、グレーティング２４から、ＸＺ平面内において射出角（９０°−θ）を成し、且つ、図２（Ｂ）に示されるように、ＸＹ平面内においてＸ軸に平行な中心軸に関して互いに絶対値が等しい（ただし符号が異なる）回折角を成す方向へ射出される。 Measuring light LyI 1 is incident on the grating 24, by being reflected and diffracted by the grating to the Y-axis direction and periodic direction, a plurality of diffracted light is generated. FIG. 2 (A) and FIG. 2 (B), the diffracted light Ly2 1 of ± 1-order is shown. These ± 1st-order diffracted lights Ly2 1 form an emission angle (90 ° −θ) in the XZ plane from the grating 24, and as shown in FIG. 2B, the X-axis in the XY plane Are emitted in directions that form diffraction angles having the same absolute value (but different signs) from each other with respect to a central axis parallel to.
回折光Ｌｙ２１は、ウエハテーブルＷＴＢの−Ｘ側の端面から外部に射出され、光検出器１６Ｙｂ１によって受光される。光検出器１６Ｙｂ１は、その内部に設けられた回折格子を用いて、回折光Ｌｙ２１を集光、合成して干渉光を発生させ、その強度を検出する。検出結果は、主制御装置２０に送られる。主制御装置２０は、受信した検出結果から、ウエハテーブルＷＴＢ（ウエハＷ）のＹ軸方向に関する位置情報を算出する。なお、Ｙエンコーダ１６Ｙ１の計測光Ｌｙ１１の光路は、図２（Ｂ）からもわかるように、Ｚ軸方向から見て（ＸＹ平面内において）その計測方向（Ｙ軸方向）と直交している。
Diffracted light Ly2 1 is emitted to the outside from the −X side end face of wafer table WTB, and is received by photodetector 16Yb 1 . The photodetector 16Yb 1 collects and synthesizes the diffracted light Ly2 1 using a diffraction grating provided therein, generates interference light, and detects its intensity. The detection result is sent to the
図３（Ａ）〜図３（Ｃ）に示されるように、光源１６Ｘａから射出される計測光Ｌｘ１は、少なくともウエハＷ上に露光領域ＩＡが存在する領域内では、必ず、ウエハテーブルＷＴＢの−Ｙ側の端面に入射する。そのため、少なくとも露光領域ＩＡがウエハＷ上に存在する領域、例えば露光時における移動領域（露光時移動領域）の内部をウエハテーブルＷＴＢが移動する際には、Ｘエンコーダ１６Ｘを用いて、ウエハテーブルＷＴＢのＸ軸方向に関する位置情報を計測することができる。同様に、光源１６Ｙａ１から射出される計測光Ｌｙ１１は、少なくともウエハＷ上に露光領域ＩＡが存在する領域内では、必ず、ウエハテーブルＷＴＢの＋Ｘ側の端面に入射する。そのため、少なくとも露光領域ＩＡがウエハＷ上に存在する領域、例えば露光時移動領域の内部をウエハテーブルＷＴＢが移動する際には、Ｙエンコーダ１６Ｙ１を用いて、ウエハテーブルＷＴＢのＹ軸方向に関する位置情報を計測することができる。
As shown in FIG. 3A to FIG. 3C, the measurement light Lx1 emitted from the light source 16Xa is always on the wafer table WTB at least in the region where the exposure region IA exists on the wafer W. Incident on the Y side end face. Therefore, when the wafer table WTB moves at least in an area where the exposure area IA exists on the wafer W, for example, the movement area during exposure (movement area during exposure), the wafer table WTB is used by using the
上述のＹエンコーダ１６Ｙ１と同様に、グレーティング２４と光源１６Ｙａ２と受光系１６Ｙｂ２とを含んで構成されるＹエンコーダ１６Ｙ２を用いることにより、ウエハテーブルＷＴＢ（ウエハＷ）のＹ軸方向に関する位置情報を検出することができる。図２（Ａ）に示されるように、光源１６Ｙａ２は、計測光Ｌｙ１１と平行に、計測光Ｌｙ１２を射出する。計測光Ｌｙ１２は、ウエハテーブルＷＴＢがアライメント系ＡＬＧの下方にあるとき、ウエハテーブルＷＴＢの＋Ｘ側の端面を介してウエハテーブルＷＴＢの内部に進入し、グレーティング２４に入射する。ここで、図２（Ｃ）に示されるように、計測光Ｌｙ１２のグレーティング２４上での照射点が、常に、アライメント系ＡＬＧの検出中心ＡＬａに位置するように、光源１６Ｙａ２の設置位置、計測光Ｌｙ１２の射出角、及びウエハテーブルＷＴＢの端面の傾斜角θ、が定められている。
Like the Y encoder 16Y 1 described above, by using the configured Y encoder 16Y 2 include a grating 24 and the light source 16Ya 2 and the light receiving system 16Yb 2, the position in the Y-axis direction of the surface position of wafer table WTB (wafer W) Information can be detected. As shown in FIG. 2 (A), the light source 16Ya 2 are parallel, and emits a measurement light LyI 2 and the measurement light LyI 1. Measuring light LyI 2, when wafer table WTB is below the alignment system ALG, and enters the inside of wafer table WTB via an end surface on the + X side of wafer table WTB, incident on the
計測光Ｌｙ１２が、グレーティング２４に入射し、そのＹ軸方向を周期方向とするグレーティングによって反射・回折されることにより、複数の回折光が発生する。図２（Ａ）及び図２（Ｃ）には、±１次の回折光Ｌｙ２２が図示されている。これら±１次の回折光Ｌｙ２２は、それぞれ±１次の回折光Ｌｙ２１の光路と平行な光路に沿って、ウエハテーブルＷＴＢの−Ｘ側の端面から外部に射出され、光検出器１６Ｙｂ２によって受光される。光検出器１６Ｙｂ２は、その内部に設けられた回折格子を用いて、回折光Ｌｙ２２を集光、合成して干渉光を発生させ、その強度を検出する。検出結果は、主制御装置２０に送られる。主制御装置２０は、受信した検出結果から、ウエハテーブルＷＴＢ（ウエハＷ）のＹ軸方向に関する位置情報を算出する。なお、Ｙエンコーダ１６Ｙ２の計測光Ｌｙ１２の光路は、図２（Ｃ）からもわかるように、Ｚ軸方向から見て（ＸＹ平面内において）その計測方向（Ｙ軸方向）と直交している。
Measuring light LyI 2 is incident on the grating 24, by being reflected and diffracted by the grating to the Y-axis direction and periodic direction, a plurality of diffracted light is generated. 2A and 2C show ± first-order diffracted light Ly22 2 . These ± 1st-order diffracted lights Ly2 2 are emitted to the outside from the −X side end surface of wafer table WTB along optical paths parallel to the optical paths of ± 1st-order diffracted lights Ly2 1 , respectively, and are detected by photodetector 16Yb 2. Is received by. The photodetector 16Yb 2 collects and combines the diffracted light Ly22 2 using a diffraction grating provided therein, generates interference light, and detects its intensity. The detection result is sent to the
光源１６Ｙａ２から射出される計測光Ｌｙ１２は、少なくともウエハＷ上にアライメント系ＡＬＧの検出中心ＡＬａが存在する領域内では、必ず、ウエハテーブルＷＴＢの＋Ｘ側の端面に入射する。そのため、検出中心ＡＬａがウエハＷ上に存在する領域、例えばアライメント時における移動領域（アライメント時移動領域）の内部をウエハテーブルＷＴＢが移動する際には、Ｙエンコーダ１６Ｙ２を用いて、ウエハテーブルＷＴＢのＹ軸方向に関する位置情報を計測することができる。なお、アライメント時移動領域では、ウエハテーブルＷＴＢのＸ軸方向に関する位置情報は、主制御装置２０により、干渉計システム１８を用いて計測されるようになっている。勿論、アライメント系ＡＬＧの検出中心ＡＬａに対応するグレーティング２４上の点に計測光を照射して、ウエハテーブルＷＴＢのＸ位置を計測する、Ｘエンコーダ１６Ｘと同様のＸエンコーダを導入しても良い。
Measuring light LyI 2 emitted from the light source 16Ya 2, in the area where the detection center ALa of alignment system ALG on at least the wafer W is present, always incident on the end surface on the + X side of wafer table WTB. Therefore, when the region detection center ALa is present on the wafer W, for example, the interior of the moving region when the alignment (alignment time movement area) wafer table WTB moves, using the Y encoder 16Y 2, wafer table WTB The position information regarding the Y-axis direction can be measured. In the movement region during alignment, position information regarding the X-axis direction of wafer table WTB is measured by
以上詳細に説明したように、本実施形態に係るエンコーダシステム１６は、ウエハテーブルＷＴＢが投影光学系ＰＬの下方に位置するとき、光源１６Ｘａ，１６Ｙａ１から射出される計測光Ｌｘ１，Ｌｙ１１を、ウエハテーブルＷＴＢの外部からその一側面を介して、露光領域ＩＡの直下に位置する点ＩＡａにてグレーティング２４に照射する。それにより、複数の回折光が発生する。そして、計測光Ｌｘ１，Ｌｙ１１のそれぞれに由来する回折光Ｌｘ２，Ｌｙ２１を、光検出器１６Ｘｂ，１６Ｙｂ１を用いて受光することにより、ウエハテーブルＷＴＢの位置情報を計測することができる。従って、ウエハテーブルＷＴＢの位置情報の計測において、回折光がウエハテーブルＷＴＢ内を通過する光路上では、ウエハテーブルＷＴＢの周辺雰囲気の揺らぎの影響を受けることがない。さらに、ウエハテーブルＷＴＢの外部についても、回折光の光路は近接し、ほぼ同じ雰囲気中を伝播するので、周辺雰囲気の揺らぎの影響は小さい。そのため、例えば露光時移動領域などの露光領域ＩＡがウエハＷ上に存在する領域において、高精度なウエハテーブルＷＴＢの位置計測を行うことが可能となる。
As described in detail above, the
さらに、本実施形態におけるエンコーダシステム１６は、ウエハテーブルＷＴＢがアライメント系ＡＬＧの下方に位置するとき、光源１６Ｙａ２から射出される計測光Ｌｙ１２を、ウエハテーブルＷＴＢの外部からその一側面を介して、アライメント系ＡＬＧの検出中心ＡＬａにてグレーティング２４に照射する。それにより、複数の回折光が発生する。そして、計測光Ｌｙ１２に由来する回折光Ｌｙ２２を、光検出器１６Ｙｂ２を用いて受光することにより、ウエハテーブルＷＴＢの位置情報を計測することができる。従って、アライメント時移動領域などのアライメント系ＡＬＧの検出中心ＡＬａがウエハＷ上に存在する領域においても、高精度なウエハテーブルＷＴＢの位置計測を行うことが可能となる。
Moreover, the
また、本実施形態では、主制御装置２０は、エンコーダシステム１６によるウエハテーブルＷＴＢの位置情報に基づいて、ウエハテーブルＷＴＢ（ウエハステージＷＳＴ）を駆動する。従って、露光領域ＩＡがウエハＷ上に存在する領域及びアライメント系ＡＬＧの検出中心ＡＬａがウエハＷ上に存在する領域において、高精度にウエハテーブルＷＴＢ（ウエハステージＷＳＴ）を駆動することが可能になる。
In the present embodiment,
また、本実施形態では、ウエハテーブルＷＴＢ及びこれに保持されるウエハＷの位置計測を高精度に行うことが可能なエンコーダシステム１６を備えているので、その計測結果に基づいて、レチクルステージＲＳＴ（レチクルＲ）とウエハステージＷＳＴ（ウエハＷ）とを投影光学系ＰＬの投影倍率に応じた速度比で相対移動させることにより、ウエハ上にレチクルＲのパターンを高精度に転写、形成することが可能となる。
Further, in the present embodiment, the
また、本実施形態では、ウエハテーブルＷＴＢのウエハホルダＷＨの裏面部分にグレーティング２４が設けられていることから、ウエハテーブルＷＴＢの加速により、ウエハテーブルＷＴＢ上でのグレーティング２４の位置が微小に変化することが無い。このため、ウエハテーブルＷＴＢを加速している間にも高精度な位置計測を行うことができる。したがって、例えば加速している間に露光を開始することも可能となり、高スループットが期待できる。 In the present embodiment, since the grating 24 is provided on the back surface portion of the wafer holder WH of the wafer table WTB, the position of the grating 24 on the wafer table WTB is slightly changed by the acceleration of the wafer table WTB. There is no. Therefore, highly accurate position measurement can be performed while accelerating wafer table WTB. Therefore, for example, exposure can be started during acceleration, and high throughput can be expected.
また、本実施形態では、露光領域ＩＡの中心の直下の点ＩＡａ、及びアライメント系ＡＬＧの検出中心ＡＬａ、にてウエハテーブルＷＴＢの位置を計測しているので、アッベ誤差無く、高精度な位置計測を行うことができ、該計測結果を用いて、露光の際のウエハの位置制御を行うことで、高精度な露光を行うことが可能である。 In the present embodiment, the position of the wafer table WTB is measured at the point IAa immediately below the center of the exposure area IA and the detection center ALa of the alignment system ALG. Therefore, highly accurate position measurement without Abbe error. It is possible to perform highly accurate exposure by performing wafer position control during exposure using the measurement result.
また、本実施形態では、計測光をウエハテーブルＷＴＢの端面から、その内部を伝播させて、グレーティング２４に入射させている。この構成の場合、例えば計測光をウエハテーブルＷＴＢの上面から入射し、そして底面にて反射させて、グレーティング２４に入射させる構成と比べて、ウエハテーブルＷＴＢのＹ軸方向及びＸ軸方向のサイズを小さくすることができる。また、計測光とグレーティング２４とのなす角θを小さくすることにより、ウエハテーブルＷＴＢのＺ軸方向のサイズ（高さ又は厚さ）も小さくすることができる。従って、本実施形態のエンコーダシステムの構成を採用することにより、ウエハテーブルＷＴＢを小型化することができる。
In the present embodiment, measurement light is propagated from the end surface of wafer table WTB through the interior thereof and is incident on grating 24. In the case of this configuration, for example, the size of the wafer table WTB in the Y-axis direction and the X-axis direction is smaller than that in the configuration in which measurement light is incident from the upper surface of the wafer table WTB and reflected from the bottom surface and incident on the
なお、上記実施形態では、Ｙエンコーダ１６Ｙ１、１６Ｙ２の光源１６Ｙａ１，１６Ｙａ２が、ともにウエハテーブルＷＴＢの＋Ｘ側の端面を介して計測光Ｌｙ１１，Ｌｙ１２をウエハテーブルＷＴＢの内部に入射させる（進入させる）場合について説明したが、これに限らず、光源１６Ｙａ１，１６Ｙａ２は、ウエハテーブルＷＴＢのＸ軸方向の反対側の端面をそれぞれ介して計測光Ｌｙ１１，Ｌｙ１２をウエハテーブルＷＴＢの内部に入射させる（進入させる）構成であっても良い。 In the above embodiment, the light sources 16Ya 1 and 16Ya 2 of the Y encoders 16Y 1 and 16Y 2 both enter the measurement light Ly1 1 and Ly1 2 into the wafer table WTB via the + X side end surface of the wafer table WTB. However, the present invention is not limited to this, and the light sources 16Ya 1 and 16Ya 2 send the measurement light Ly1 1 and Ly1 2 to the wafer table via the end surfaces on the opposite side of the wafer table WTB in the X-axis direction, respectively. It may be configured to enter (approach) the inside of the WTB.
なお、上記実施形態において、図２（Ａ）に示されるエンコーダシステム１６の各光源に代えて、２つの計測光を射出する光源を用いても良い。２つの計測光は、光源の内部において、例えば半導体レーザから射出されるレーザ光を回折格子を介して分岐することによって、生成される。射出される２つの計測光は、ウエハテーブルＷＴＢの側面を介してウエハテーブルＷＴＢの内部に進入し、ウエハテーブルＷＴＢの内部を伝播し、グレーティング２４に入射する。そして、グレーティング２４にて発生する複数の回折光のうち、２つの計測光のそれぞれに由来する少なくとも各１つの回折光が同軸上に合成される。その合成光の強度を、光検出器を用いて検出する。ここで、２つの計測光がグレーティング２４上の同一点（例えば、点ＩＡａ又はその近傍）に入射し、それぞれの計測光に由来する少なくとも各１つの回折光が同軸上に合成されるように、ウエハテーブルＷＴＢの側面に入射する際の屈折を考慮して、光源の設置位置、２つの計測光の射出角、及びウエハテーブルＷＴＢの端面の傾斜角θ、グレーティング２４のピッチが定められているものとする。この光源を導入したエンコーダシステムを採用した場合も、図２（Ａ）に示される構成のエンコーダシステム１６を用いた場合と同等の効果が得られる。
In the above embodiment, instead of each light source of the
また、上記実施形態では、光源からの計測光を、ウエハテーブルのＸ軸方向（又はＹ軸方向）の一側の端面から入射させ、その計測光に由来するグレーティングで発生する回折光をウエハテーブルのＸ軸方向（又はＹ軸方向）の他側の端面を介して光検出器で受光する構成のエンコーダが用いられる場合について説明した。しかし、本発明がこれに限定されるものではない。例えば、ウエハテーブルのＸ軸方向（又はＹ軸方向）の一側の端面をビームスプリッタにより構成し、該ビームスプリッタを介して光源からの計測光の一部をウエハテーブルの内部に入射させ、その計測光に由来するウエハテーブルの天井部に設けられたグレーティングからの回折光を、ビームスプリッタ（前記端面）で反射された計測光の一部と同軸に合成し、この合成された２つの光の干渉光の強度を光検出器で検出する構成のエンコーダを用いる、露光装置などにも本発明は好適に適用することができる。 In the above embodiment, the measurement light from the light source is incident from one end face in the X-axis direction (or Y-axis direction) of the wafer table, and the diffracted light generated by the grating derived from the measurement light is incident on the wafer table. A case has been described where an encoder configured to receive light with a photodetector via the other end face in the X-axis direction (or Y-axis direction) is used. However, the present invention is not limited to this. For example, one end face of the wafer table in the X-axis direction (or Y-axis direction) is configured by a beam splitter, and a part of measurement light from a light source is incident on the wafer table via the beam splitter. The diffracted light from the grating provided on the ceiling of the wafer table derived from the measurement light is synthesized coaxially with a part of the measurement light reflected by the beam splitter (the end face), and the two synthesized lights are combined. The present invention can also be suitably applied to an exposure apparatus that uses an encoder configured to detect the intensity of interference light with a photodetector.
なお、上記実施形態及び変形例では、ウエハテーブルＷＴＢの少なくとも一部を、エンコーダシステムの計測用レーザ光が透過可能な材料（合成石英など）で構成するものとしたが、これに限らず、例えば中空の枠部材などで構成しても良い。この場合、枠部材の開口部に透過部材を設けてその内部を密封しても良いし、その内部の温度を調整可能としても良い。ウエハテーブルを中空の枠部材などで構成する場合を含み、上記実施形態では、エンコーダ本体の構成部分のうち、熱源となる部分（光源、ディテクタなど）と、熱源と成らない部分（光学系など）とを分離し、両者を光ファイバで接続するような構成を採用しても良い。 In the embodiment and the modification, at least a part of the wafer table WTB is made of a material (such as synthetic quartz) that can transmit the measurement laser light of the encoder system. You may comprise with a hollow frame member. In this case, a transparent member may be provided in the opening of the frame member to seal the inside, or the temperature inside the frame member may be adjustable. Including the case where the wafer table is constituted by a hollow frame member or the like, in the above embodiment, of the constituent parts of the encoder body, the part that becomes the heat source (light source, detector, etc.) and the part that does not become the heat source (optical system etc.) It is also possible to adopt a configuration in which the two are separated and connected by an optical fiber.
なお、上記実施形態では露光装置が単一のウエハステージを備える場合について説明したが、これに限らず、例えば米国特許第６，５９０，６３４号明細書、米国特許第５，９６９，４４１号明細書、米国特許第６，２０８，４０７号明細書などに開示されているように、複数のウエハステージを備える露光装置にも、本発明を適用することが可能である。また、例えば、米国特許第６,８９７,９６３号明細書に開示されるように、ウエハステージと、ウエハステージとは独立して移動可能な計測ステージとを含むステージ装置を備える露光装置に本発明を適用することも可能である。 In the above-described embodiment, the case where the exposure apparatus includes a single wafer stage has been described. However, the present invention is not limited to this. For example, US Pat. No. 6,590,634, US Pat. No. 5,969,441 As disclosed in US Pat. No. 6,208,407, etc., the present invention can also be applied to an exposure apparatus including a plurality of wafer stages. Further, as disclosed in, for example, US Pat. No. 6,897,963, the present invention relates to an exposure apparatus including a stage apparatus including a wafer stage and a measurement stage that can move independently of the wafer stage. It is also possible to apply.
なお、例えば国際公開第２００４／０５３９５５号パンフレット及びこれに対応する米国特許出願公開第２００５／０２５９２３４号明細書などに開示される液浸露光装置に、本発明を適用することも可能である。この場合、移動鏡１７に代えて、ウエハテーブルＷＴＢの側面に反射面を形成することで、ウエハテーブルＷＴＢの上面が、ウエハＷを含め、全体としてフルフラットな同一面となるようにすることが望ましい。
Note that the present invention can also be applied to, for example, an immersion exposure apparatus disclosed in International Publication No. 2004/053955 pamphlet and US Patent Application Publication No. 2005/0259234 corresponding thereto. In this case, instead of the
また、上記実施形態の露光装置における投影光学系は縮小系のみならず等倍及び拡大系のいずれでも良いし、投影光学系は屈折系のみならず、反射系及び反射屈折系のいずれでも良いし、その投影像は倒立像及び正立像のいずれでも良い。さらに、前述の露光領域ＩＡは、投影光学系ＰＬの視野内で光軸ＡＸを含むオンアクシス領域であるが、例えば国際公開第２００４／１０７０１１号パンフレットに開示されるインライン型の反射屈折系と同様に、光軸ＡＸを含まないオフアクシス領域でも良い。また、露光領域ＩＡの形状は矩形に限らず、例えば円弧、台形、あるいは平行四辺形などでも良い。 In addition, the projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system, but also an equal magnification and an enlargement system, and the projection optical system may be not only a refraction system but also a reflection system or a catadioptric system. The projected image may be an inverted image or an erect image. Further, the above-described exposure area IA is an on-axis area including the optical axis AX within the field of view of the projection optical system PL. For example, the exposure area IA is similar to the inline catadioptric system disclosed in WO 2004/107011. In addition, an off-axis region that does not include the optical axis AX may be used. The shape of the exposure area IA is not limited to a rectangle, and may be, for example, an arc, a trapezoid, or a parallelogram.
また、照明光ＩＬは、ＡｒＦエキシマレーザ光（波長１９３ｎｍ）に限らず、ＫｒＦエキシマレーザ光（波長２４８ｎｍ）などの紫外光、あるいはＦ2レーザ光（波長１５７ｎｍ）などの真空紫外光であっても良い。また、例えば米国特許第７,０２３,６１０号明細書などに開示されているように、真空紫外光としてＤＦＢ半導体レーザ又はファイバーレーザから発振される赤外域、又は可視域の単一波長レーザ光を、例えばエルビウム（又はエルビウムとイッテルビウムの両方）がドープされたファイバーアンプで増幅し、非線形光学結晶を用いて紫外域に波長変換した高調波を用いても良い。 The illumination light IL is not limited to ArF excimer laser light (wavelength 193 nm), but may be ultraviolet light such as KrF excimer laser light (wavelength 248 nm) or vacuum ultraviolet light such as F 2 laser light (wavelength 157 nm). good. Further, as disclosed in, for example, US Pat. No. 7,023,610, a single wavelength laser beam in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser is used as vacuum ultraviolet light. For example, a harmonic that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into an ultraviolet region using a nonlinear optical crystal may be used.
また、上記実施形態では、露光装置の照明光ＩＬとしては波長１００ｎｍ以上の光に限らず、波長１００ｎｍ未満の光を用いても良いことは言うまでもない。例えば、ＳＯＲ又はプラズマレーザを光源として、軟Ｘ線領域（例えば５〜１５ｎｍの波長域）のＥＵＶ（Extreme Ultraviolet）光を発生させるとともに、その露光波長（例えば１３．５ｎｍ）の下で設計されたオール反射光学系、及び反射型マスクを用いるＥＵＶ露光装置にも本発明を好適に適用することができる。このほか、電子線又はイオンビームなどの荷電粒子線を用いる露光装置にも、本発明は適用できる。 In the above embodiment, it is needless to say that the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used. For example, the SOR or plasma laser is used as a light source to generate EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm) and designed under the exposure wavelength (for example, 13.5 nm). The present invention can also be suitably applied to an EUV exposure apparatus that uses an all-reflection optical system and a reflective mask. In addition, the present invention can be applied to an exposure apparatus using a charged particle beam such as an electron beam or an ion beam.
また、上記実施形態においては、光透過性の基板上に所定の遮光パターン（又は位相パターン・減光パターン）を形成した光透過型マスク（レチクル）を用いたが、このレチクルに代えて、例えば米国特許第６，７７８，２５７号明細書に開示されているように、露光すべきパターンの電子データに基づいて、透過パターンまたは反射パターン、あるいは発光パターンを形成する電子マスク（可変成形マスク、アクティブマスク、あるいはイメージジェネレータとも呼ばれ、例えば非発光型画像表示素子（空間光変調器）の一種であるＤＭＤ（Digital Micro-mirror Device）などを含む）を用いても良い。 In the above embodiment, a light transmissive mask (reticle) in which a predetermined light shielding pattern (or phase pattern / dimming pattern) is formed on a light transmissive substrate is used. Instead of this reticle, for example, As disclosed in US Pat. No. 6,778,257, based on electronic data of a pattern to be exposed, an electronic mask (variable shaping mask, active pattern) that forms a transmission pattern, a reflection pattern, or a light emission pattern is disclosed. Also called a mask or an image generator, for example, a DMD (Digital Micro-mirror Device) which is a kind of non-light emitting image display element (spatial light modulator) may be used.
また、例えば国際公開第２００１／０３５１６８号パンフレットに開示されているように、干渉縞をウエハ上に形成することによって、ウエハ上にライン・アンド・スペースパターンを形成する露光装置（リソグラフィシステム）にも本発明を適用することができる。 Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that forms line and space patterns on a wafer by forming interference fringes on the wafer. The present invention can be applied.
さらに、例えば米国特許第６，６１１，３１６号明細書に開示されているように、２つのレチクルパターンを投影光学系を介してウエハ上で合成し、１回のスキャン露光によってウエハ上の１つのショット領域をほぼ同時に二重露光する露光装置にも本発明を適用することができる。 Further, as disclosed in, for example, US Pat. No. 6,611,316, two reticle patterns are synthesized on a wafer via a projection optical system, and one scan exposure is performed on one wafer. The present invention can also be applied to an exposure apparatus that performs double exposure of shot areas almost simultaneously.
また、物体上にパターンを形成する装置は、前述の露光装置（リソグラフィシステム）に限られず、例えばインクジェット方式にて物体上にパターンを形成する装置にも本発明を適用することができる。 The apparatus for forming a pattern on an object is not limited to the above-described exposure apparatus (lithography system), and the present invention can also be applied to an apparatus for forming a pattern on an object by, for example, an inkjet method.
なお、上記実施形態でパターンを形成すべき物体（エネルギビームが照射される露光対象の物体）はウエハに限られるものではなく、ガラスプレート、セラミック基板、フィルム部材、あるいはマスクブランクスなど、他の物体でも良い。 Note that the object on which the pattern is to be formed in the above embodiment (the object to be exposed to the energy beam) is not limited to the wafer, but other objects such as a glass plate, a ceramic substrate, a film member, or a mask blank. But it ’s okay.
露光装置の用途としては半導体製造用の露光装置に限定されることなく、例えば、角型のガラスプレートに液晶表示素子パターンを転写形成する液晶用の露光装置、あるいは有機ＥＬ、薄型磁気ヘッド、撮像素子（ＣＣＤ等）、マイクロマシン及びＤＮＡチップなどを製造するための露光装置にも広く適用できる。また、半導体素子などのマイクロデバイスだけでなく、光露光装置、ＥＵＶ露光装置、Ｘ線露光装置、及び電子線露光装置などで使用されるレチクル又はマスクを製造するために、ガラス基板又はシリコンウエハなどに回路パターンを転写する露光装置にも本発明を適用できる。 The application of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, but for example, an exposure apparatus for liquid crystal that transfers and forms a liquid crystal display element pattern on a square glass plate, or an organic EL, thin magnetic head, imaging The present invention can be widely applied to an exposure apparatus for manufacturing elements (CCD, etc.), micromachines, DNA chips and the like. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.
半導体素子などの電子デバイスは、デバイスの機能・性能設計を行うステップ、この設計ステップに基づいたレチクルを製作するステップ、シリコン材料からウエハを製作するステップ、前述した実施形態の露光装置（パターン形成装置）によりマスク（レチクル）のパターンをウエハに転写するリソグラフィステップ、露光されたウエハを現像する現像ステップ、レジストが残存している部分以外の部分の露出部材をエッチングにより取り去るエッチングステップ、エッチングが済んで不要となったレジストを取り除くレジスト除去ステップ、デバイス組み立てステップ（ダイシング工程、ボンディング工程、パッケージ工程を含む）、検査ステップ等を経て製造される。この場合、リソグラフィステップで、上記実施形態の露光装置を用いて前述の露光方法が実行され、ウエハ上にデバイスパターンが形成されるので、高集積度のデバイスを生産性良く製造することができる。 An electronic device such as a semiconductor element includes a step of designing a function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the exposure apparatus (pattern forming apparatus) of the above-described embodiment. ) A lithography step for transferring a mask (reticle) pattern onto a wafer, a development step for developing the exposed wafer, an etching step for removing exposed members other than the portion where the resist remains by etching, and etching is completed. It is manufactured through a resist removal step for removing unnecessary resist, a device assembly step (including a dicing process, a bonding process, and a package process), an inspection step, and the like. In this case, in the lithography step, the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.
以上説明したように、本発明の露光装置は、移動体を用いて物体を保持して移動させ、該物体にエネルギビームを照射してパターンを形成するのに適している。また、本発明のデバイス製造方法は、高集積度のデバイスの製造に適している。 As described above, the exposure apparatus of the present invention is suitable for forming a pattern by holding and moving an object using a moving body and irradiating the object with an energy beam. The device manufacturing method of the present invention is suitable for manufacturing a highly integrated device.
１２…照明系（パターニング装置の一部）、１６…エンコーダシステム、１６Ｘ…Ｘエンコーダ、１６Ｙ１，１６Ｙ２…Ｙエンコーダ、１６Ｘａ，１６Ｙａ１，１６Ｙａ２…光源、１６Ｘｂ，１６Ｙｂ１，１６Ｙｂ２…光検出器、１８…干渉計システム、２４…２次元グレーティング、１００…露光装置（パターン形成装置）、ＡＬＧ…アライメント系、ＡＬａ，ＩＡａ…所定点、ＩＬ…照明光（エネルギビーム）、ＰＬ…投影光学系（パターニング装置の一部）、Ｌｘ１，Ｌｙ１１，Ｌｙ１２…計測光、Ｌｘ２，Ｌｙ２１，Ｌｙ２１…回折光、Ｗ…ウエハ（物体）、ＷＴＢ…ウエハテーブル（移動体、テーブル）。 12 ... illumination system (part of the patterning device), 16 ... encoder system, 16X ... X encoder, 16Y 1, 16Y 2 ... Y encoders, 16Xa, 16Ya 1, 16Ya 2 ... light source, 16Xb, 16Yb 1, 16Yb 2 ... Light Detector: 18 ... Interferometer system, 24 ... Two-dimensional grating, 100 ... Exposure device (pattern forming device), ALG ... Alignment system, ALa, IAa ... Predetermined point, IL ... Illumination light (energy beam), PL ... Projection optics System (part of patterning apparatus), Lx1, Ly1 1 , Ly1 2 ... measurement light, Lx2, Ly2 1 , Ly2 1 ... diffracted light, W ... wafer (object), WTB ... wafer table (moving body, table).
Claims (18)
物体を保持して実質的に所定平面に沿って移動可能で、前記物体の裏面側で前記所定平面に実質的に平行な面に沿ってグレーティングが配置され、所定波長の光が内部を進行可能な移動体と；
前記エネルギビームの照射点である露光位置に対応する第１計測位置で、前記所定平面と交差する前記移動体の一側面を介して前記移動体の外部から前記グレーティングに前記所定波長の第１計測光を入射させ、該第１計測光に由来する前記グレーティングからの回折光を受光して、前記移動体の前記所定平面内の計測方向に関する第１位置情報を計測する第１計測装置と；
前記露光位置から一軸方向に離間して配置され、前記移動体上のマーク又は前記移動体に保持された物体上のマークを検出するマーク検出系と；
前記第１計測装置とともに計測システムを構成し、前記マーク検出系の検出中心に対応する第２計測位置で、前記移動体の一側面を介して前記移動体の外部から前記グレーティングに前記所定波長の第２計測光を入射させ、該第２計測光に由来する前記グレーティングからの回折光を受光して、前記移動体の計測方向に関する第２位置情報を計測する第２計測装置と；
前記計測システムからの前記位置情報に基づいて、前記移動体を駆動する駆動システムと；を備える露光装置。 An exposure apparatus that forms a pattern on an object by irradiation with an energy beam,
The object can be held and moved substantially along a predetermined plane, and a grating is arranged on the back side of the object along a plane substantially parallel to the predetermined plane so that light of a predetermined wavelength can travel inside. A moving body;
A first measurement of the predetermined wavelength from the outside of the moving body to the grating through a side surface of the moving body that intersects the predetermined plane at a first measurement position corresponding to an exposure position that is an irradiation point of the energy beam. A first measuring device that makes light incident, receives diffracted light from the grating derived from the first measurement light, and measures first position information related to a measurement direction in the predetermined plane of the moving body;
A mark detection system that is arranged uniaxially from the exposure position and detects a mark on the moving body or a mark on an object held by the moving body;
A measurement system is configured together with the first measurement device, and at a second measurement position corresponding to the detection center of the mark detection system, the predetermined wavelength is applied to the grating from the outside of the movable body via one side surface of the movable body. A second measurement device that receives the second measurement light, receives the diffracted light from the grating derived from the second measurement light, and measures second position information related to the measurement direction of the moving body;
An exposure apparatus comprising: a drive system that drives the movable body based on the position information from the measurement system.
前記他の側面は、前記一側面と前記一軸方向に垂直な方向に関して反対側で前記一軸方向に延びる前記移動体の第２側面であり、
前記第１、第２計測装置は、前記第１側面を介して少なくとも１つの第１、第２計測光を前記移動体内部に入射させ、該第１、第２計測光に由来する前記回折光を前記第２側面を介して受光する、請求項７に記載の露光装置。 The one side surface is a first side surface of the movable body extending in the uniaxial direction,
The other side surface is a second side surface of the movable body that extends in the uniaxial direction on the opposite side to the one side surface and a direction perpendicular to the uniaxial direction,
The first and second measurement devices cause at least one of the first and second measurement lights to enter the movable body through the first side surface, and the diffracted light derived from the first and second measurement lights. The exposure apparatus according to claim 7, wherein the light is received through the second side surface.
前記第１、第２計測装置は、それぞれ前記一軸方向に関する前記移動体の位置情報を計測する、請求項８に記載の露光装置。 The grating includes a diffraction grating having the uniaxial direction as a periodic direction,
The exposure apparatus according to claim 8, wherein the first and second measurement apparatuses respectively measure position information of the moving body in the uniaxial direction.
前記計測システムは、前記第３、第４側面の一方を介して少なくとも１つの第３計測光を前記移動体内部に入射させ、該第３計測光に由来する前記回折光を前記第３、第４側面の他方を介して受光する第３計測装置をさらに有する、請求項８又は９に記載の露光装置。 The movable body has third and fourth side surfaces extending in a direction perpendicular to the uniaxial direction within the predetermined plane,
The measurement system causes at least one third measurement light to enter the movable body via one of the third and fourth side surfaces, and causes the diffracted light derived from the third measurement light to pass through the third and fourth sides. The exposure apparatus according to claim 8 or 9, further comprising a third measurement device that receives light through the other of the four side surfaces.
前記第３計測装置は、前記所定平面内の前記照射中心を含む領域内における、前記垂直な方向に関する前記移動体の位置情報を計測する、請求項１０に記載の露光装置。 The grating includes a diffraction grating whose periodic direction is the perpendicular direction;
The exposure apparatus according to claim 10, wherein the third measurement apparatus measures position information of the moving body in the vertical direction within a region including the irradiation center in the predetermined plane.
前記露光された基板を現像することと；を含むデバイス製造方法。 Exposing the substrate as the object using the exposure apparatus according to claim 1;
Developing the exposed substrate; and a device manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008096617A JP2009252851A (en) | 2008-04-02 | 2008-04-02 | Exposure apparatus, and device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008096617A JP2009252851A (en) | 2008-04-02 | 2008-04-02 | Exposure apparatus, and device manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2009252851A true JP2009252851A (en) | 2009-10-29 |
Family
ID=41313302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008096617A Pending JP2009252851A (en) | 2008-04-02 | 2008-04-02 | Exposure apparatus, and device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009252851A (en) |
Cited By (250)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140016838A (en) * | 2012-07-31 | 2014-02-10 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US8928861B2 (en) | 2010-06-23 | 2015-01-06 | Asml Netherlands B.V. | Lithographic apparatus |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
| US10604847B2 (en) | 2014-03-18 | 2020-03-31 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
| US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
| US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10665452B2 (en) | 2016-05-02 | 2020-05-26 | Asm Ip Holdings B.V. | Source/drain performance through conformal solid state doping |
| US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
| US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
| US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
| US10720331B2 (en) | 2016-11-01 | 2020-07-21 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10720322B2 (en) | 2016-02-19 | 2020-07-21 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top surface |
| US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10784102B2 (en) | 2016-12-22 | 2020-09-22 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10787741B2 (en) | 2014-08-21 | 2020-09-29 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
| US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10844486B2 (en) | 2009-04-06 | 2020-11-24 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
| US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10851456B2 (en) | 2016-04-21 | 2020-12-01 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
| USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
| US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
| US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
| US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
| US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US11970766B2 (en) | 2023-01-17 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
-
2008
- 2008-04-02 JP JP2008096617A patent/JP2009252851A/en active Pending
Cited By (305)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10844486B2 (en) | 2009-04-06 | 2020-11-24 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
| US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8928861B2 (en) | 2010-06-23 | 2015-01-06 | Asml Netherlands B.V. | Lithographic apparatus |
| US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
| US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
| KR102090834B1 (en) * | 2012-07-31 | 2020-03-19 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| KR20140016838A (en) * | 2012-07-31 | 2014-02-10 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
| US10604847B2 (en) | 2014-03-18 | 2020-03-31 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10787741B2 (en) | 2014-08-21 | 2020-09-29 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
| US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
| US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10720322B2 (en) | 2016-02-19 | 2020-07-21 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top surface |
| US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10851456B2 (en) | 2016-04-21 | 2020-12-01 | Asm Ip Holding B.V. | Deposition of metal borides |
| US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US10665452B2 (en) | 2016-05-02 | 2020-05-26 | Asm Ip Holdings B.V. | Source/drain performance through conformal solid state doping |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
| US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
| US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11107676B2 (en) | 2016-07-28 | 2021-08-31 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
| US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US10943771B2 (en) | 2016-10-26 | 2021-03-09 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10720331B2 (en) | 2016-11-01 | 2020-07-21 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
| US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
| US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11851755B2 (en) | 2016-12-15 | 2023-12-26 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10784102B2 (en) | 2016-12-22 | 2020-09-22 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
| US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
| US10950432B2 (en) | 2017-04-25 | 2021-03-16 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
| US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
| US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| US11837494B2 (en) | 2020-03-11 | 2023-12-05 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
| US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
| US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
| US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11972944B2 (en) | 2022-10-21 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11970766B2 (en) | 2023-01-17 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009252851A (en) | Exposure apparatus, and device manufacturing method | |
| JP5146507B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP5071894B2 (en) | Stage apparatus, pattern forming apparatus, exposure apparatus, stage driving method, exposure method, and device manufacturing method | |
| JP5224071B2 (en) | MOBILE SYSTEM, PATTERN FORMING APPARATUS, EXPOSURE APPARATUS, MEASURING APPARATUS, AND DEVICE MANUFACTURING METHOD | |
| JP5679131B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP5700363B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP5979254B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP5489068B2 (en) | POSITION MEASUREMENT SYSTEM, EXPOSURE APPARATUS, POSITION MEASUREMENT METHOD, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, TOOL AND MEASUREMENT METHOD | |
| US8390780B2 (en) | Movable-body apparatus, exposure apparatus, exposure method, and device manufacturing method | |
| US10642169B2 (en) | Measurement device and measurement method, exposure apparatus and exposure method, and device manufacturing method | |
| JP2009278095A (en) | Exposure device and exposure method, and device method for manufacturing | |
| JP5605768B2 (en) | Exposure apparatus and device manufacturing method | |
| JP5299638B2 (en) | Exposure apparatus and device manufacturing method | |
| JP6748907B2 (en) | Measuring apparatus, exposure apparatus, device manufacturing method, and pattern forming method | |
| JP2013506269A (en) | Exposure apparatus and device manufacturing method | |
| JP2009252850A (en) | Mobile body system, exposure apparatus and exposure method, and device manufacturing method | |
| JP2009252849A (en) | Exposure apparatus, and device manufacturing method | |
| JP2009252848A (en) | Exposure apparatus and exposure method, and device manufacturing method | |
| JP2009252847A (en) | Mobile body system, exposure apparatus and exposure method, and device manufacturing method | |
| JP2009252852A (en) | Mobile body system, exposure apparatus and exposure method, and device manufacturing method | |
| JP2013016680A (en) | Exposure method and exposure device, and device manufacturing method |