JP2009251243A - Method of removing pellicle adhesive residue - Google Patents
Method of removing pellicle adhesive residue Download PDFInfo
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- JP2009251243A JP2009251243A JP2008098529A JP2008098529A JP2009251243A JP 2009251243 A JP2009251243 A JP 2009251243A JP 2008098529 A JP2008098529 A JP 2008098529A JP 2008098529 A JP2008098529 A JP 2008098529A JP 2009251243 A JP2009251243 A JP 2009251243A
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Abstract
Description
本発明は、マスク基板からペリクルを剥離したときにマスク基板上に残存する接着剤残渣を除去することに関する。 The present invention relates to removing an adhesive residue remaining on a mask substrate when the pellicle is peeled from the mask substrate.
半導体デバイスは、近時益々高集積化、微細化して来ており、現在では、ArF(λ=193nm)露光が最先端のデバイス作製に用いられている。このArF露光は、液浸法や二重露光法などと併用され、今後暫くは先端デバイス作製の主力となると考えられている。
露光装置内で発生したパーティクル等の異物がマスクのパターン上に到達すると、ウェーハ上の投影パターンに異常を引き起こし、異物がマスク上に留まっている限り、不良パターンが作製され続けるという重大な問題を引き起こすため、現在フォトマスクの保護には、ペリクルと呼ばれる薄い有機膜がマスク上のパターンから数mm離れた位置で周辺のフレームを介して貼られている(図1(a)参照)。
Semiconductor devices have been increasingly integrated and miniaturized recently, and now ArF (λ = 193 nm) exposure is used for the most advanced device fabrication. This ArF exposure is used in combination with a liquid immersion method, a double exposure method, or the like, and is considered to be the main force for manufacturing advanced devices for a while.
If foreign matter such as particles generated in the exposure system reaches the mask pattern, it will cause an abnormality in the projected pattern on the wafer, and as long as the foreign matter stays on the mask, it will cause a serious problem that defective patterns will continue to be produced. In order to protect the photomask, a thin organic film called a pellicle is currently attached via a peripheral frame at a position several mm away from the pattern on the mask (see FIG. 1A).
通常、ペリクルは四角形状のフレーム内に張られた構造を有しており、石英ガラス製のマスクに接着剤を介して装着される。しかし、先端デバイス作製においては、この接着剤から発生した有機物(アウトガス)や異物も、歩留まりの低下に関与すると考えられる。
また、ペリクルの接着剤としてはアクリル系の樹脂が一般に用いられるが、このアクリル系の樹脂からはアウトガスが発生する懸念があり、先端デバイス作製において問題を引き起こす可能性がある。化学的に安定な接着剤としてはシリコーン系の樹脂があるが、シリコーン樹脂は、一般に各種の薬品や過酷な環境下においても安定な材料として知られており、本目的にも最適な接着剤といえる。
Usually, the pellicle has a structure stretched in a rectangular frame, and is attached to a quartz glass mask via an adhesive. However, in the production of advanced devices, it is considered that organic substances (outgas) and foreign matters generated from the adhesive are also involved in the yield reduction.
An acrylic resin is generally used as an adhesive for the pellicle, but there is a concern that outgas may be generated from the acrylic resin, which may cause a problem in the manufacture of advanced devices. There are silicone-based resins as chemically stable adhesives, but silicone resins are generally known as stable materials in various chemicals and harsh environments. I can say that.
しかし、このシリコーン樹脂の安定性が問題となる場面も存在する。ペリクルは、ある程度の期間や頻度で交換することもあるが、その際にはペリクルフレームをマスク基板から外す必要がある。シリコーン樹脂は化学的に安定な特性のため、フレームを剥がした際に、マスク上にシリコーン残渣が残存することがある(図1(c)参照)。
またシリコーン樹脂は、紫外線を浴びるに従い、ガラス化することも知られており、ガラス化により更に除去が難しくなるという一面もある。
このように化学的に安定な材料のため、残存すると除去がしにくく、また微細なパターンを有するマスクには、残存する残渣を除去するためとはいえ、パターンの形状を変えてしまうような方法(フッ化水素処理等:石英を溶解)を採用することができない。
However, there are situations where the stability of the silicone resin becomes a problem. The pellicle may be replaced at a certain period or frequency. In this case, it is necessary to remove the pellicle frame from the mask substrate. Since the silicone resin has a chemically stable property, a silicone residue may remain on the mask when the frame is peeled off (see FIG. 1C).
Silicone resins are also known to vitrify as they are exposed to ultraviolet rays, and there is an aspect that the vitrification makes it more difficult to remove.
Because it is a chemically stable material, it is difficult to remove it if it remains, and a mask that has a fine pattern is a method that changes the shape of the pattern even though it removes the remaining residue. (Hydrogen fluoride treatment, etc .: melting quartz) cannot be employed.
また、シリコーン樹脂の除去方法として知られているNaOH、KOH処理も、NaやKなどの小さい可動イオンが洗浄中に石英マスクに残存、または表面近傍に拡散してしまうと、以後のデバイスプロセス中に露光装置内に拡散してしまう恐れもあり、採用が難しいという問題もある。
従来、ペリクル枠脱着時にペリクル枠とフォトマスクとの間に温度差を設け、フォトマスクを高温に、ペリクル枠を低温とすることで、糊の残渣をフォトマスク側に残存させない剥離方法も提案されている(特許文献1参照)が、接着剤がシリコーン樹脂の場合は、高温・低温に対して安定な性質を有するため、剥離方法としては有効ではない。
Also, NaOH and KOH treatment, which is known as a method for removing a silicone resin, can cause small mobile ions such as Na and K to remain in the quartz mask during cleaning or diffuse near the surface during subsequent device processes. In addition, there is a possibility that it may diffuse into the exposure apparatus, making it difficult to adopt.
Conventionally, a peeling method has been proposed in which a temperature difference is provided between the pellicle frame and the photomask when the pellicle frame is attached, the photomask is set to a high temperature, and the pellicle frame is set to a low temperature so that no adhesive residue remains on the photomask side. However, when the adhesive is a silicone resin, it is not effective as a peeling method because it has a property stable to high and low temperatures.
本発明は、上記の事情に鑑みて、マスク基板のマスクパターンを損傷することなく、シリコーン樹脂よりなるペリクル接着剤の残渣を完全に除去することを課題とする。 In view of the above circumstances, an object of the present invention is to completely remove a pellicle adhesive residue made of a silicone resin without damaging the mask pattern of the mask substrate.
本発明のペリクル接着剤残渣の除去方法は、アルカリ溶液で処理を行った後に、硫酸を含む酸溶液で処理することにより除去することを特徴とする。アルカリ溶液がアンモニア水溶液またはTMAH溶液であること、アルカリ溶液の濃度が1質量%以上であること、がそれぞれ好ましい。また、硫酸溶液の濃度が、5質量%以上であること、硫酸溶液に30質量%の過酸化水素水を体積比で1〜50%添加すること、がそれぞれ好ましく、さらにまた、各処理温度が50℃以上であること、がそれぞれ好ましい。 The method for removing a pellicle adhesive residue according to the present invention is characterized in that the pellicle adhesive residue is removed by treatment with an acid solution containing sulfuric acid after treatment with an alkaline solution. It is preferable that the alkaline solution is an aqueous ammonia solution or a TMAH solution, and the concentration of the alkaline solution is 1% by mass or more. Further, the concentration of the sulfuric acid solution is preferably 5% by mass or more, and 30% by mass of hydrogen peroxide water is preferably added to the sulfuric acid solution in a volume ratio of 1 to 50%. Each of them is preferably 50 ° C. or higher.
本発明によれば、マスク基板上のマスクパターンを毀損・変質させることを危惧することなく、マスク基板上に残存する接着剤残渣を完全に除去することができる。 According to the present invention, it is possible to completely remove the adhesive residue remaining on the mask substrate without worrying about damage or alteration of the mask pattern on the mask substrate.
上記の問題を解決する為に本発明者は鋭意研究した結果、以下の知見に達したものである。まず、シリコーン樹脂残渣の除去の方法としては、CMOS互換性のある処理が必須となる。すなわち、アルカリやアルカリ土類やその他の金属イオンを含まずに一般に半導体ウェーハの洗浄などに用いられる薬液で処理をすることが必須となる。この前提を保ちつつシリコーン残渣を除去する方法を検討した。その方法は、残存したシリコーン樹脂をCMOS互換性のあるアンモニアもしくはTMAH(Tetramethyl
ammonium hydroxide)でアルカリ高温処理を行う。これのみでは残渣はほとんど除去することができず外見上も大きな変化はないが、この後に硫酸等の酸で高温処理することで残渣を完全に取り除くという方法である。
As a result of diligent research, the present inventor has reached the following knowledge. First, as a method for removing the silicone resin residue, CMOS compatible processing is essential. That is, it is essential to perform treatment with a chemical solution generally used for cleaning a semiconductor wafer and the like without containing alkali, alkaline earth or other metal ions. A method for removing the silicone residue was examined while maintaining this premise. The method is to replace the remaining silicone resin with ammonia compatible with CMOS or TMAH (Tetramethyl).
High temperature alkali treatment with ammonium hydroxide). With this alone, the residue can hardly be removed and there is no significant change in appearance, but this is a method in which the residue is completely removed by high-temperature treatment with an acid such as sulfuric acid.
この機構は以下の通りと推定される。シリコーン樹脂の骨格ともいえるシロキサン結合(−Si−O−Si−)にアルカリ処理を行い、この結合を解離させる(−Si−O−R + HO−Si−:Rは陽イオン)。続いて高温硫酸処理を施すことでこの弱体化したシリコーン樹脂を完全に除去するという方法である。この場合、硫酸に過酸化水素水を添加しても効果が期待できる。これは硫酸加水洗浄(SPM洗浄、ピラニア洗浄とも呼ばれる)として半導体の有機物汚染除去に広く用いられる方法である。
以下に、添付図面をも参照しながら、本発明を具体的に説明する。
This mechanism is estimated as follows. A siloxane bond (—Si—O—Si—), which can be said to be a skeleton of the silicone resin, is subjected to an alkali treatment to dissociate this bond (—Si—O—R + HO—Si—: R is a cation). Subsequently, the weakened silicone resin is completely removed by performing high-temperature sulfuric acid treatment. In this case, the effect can be expected even if hydrogen peroxide is added to sulfuric acid. This is a method widely used for removing organic contaminants from semiconductors as sulfuric acid hydrodehydration (also called SPM cleaning or piranha cleaning).
Hereinafter, the present invention will be specifically described with reference to the accompanying drawings.
図1は、ペリクルの剥離により接着剤残渣が残ることを示す説明模式図で、(a)はペリクルを装着したマスク基板系を示す説明模式図、(b)はその部分拡大図、(c)はペリクル剥離による接着剤残渣が生じることを示す説明模式図である。図2は、接着剤残渣の測定法を説明する説明模式図である。図3は、実験例1による処理後の残渣の状態を示すグラフである。
ペリクル膜2がペリクルフレーム3に固定されたものであるペリクル1は、マスク基板(石英基板)4上に形成されているマスクパターン(金属パターン)5を覆うように、ペリクル接着剤6によってマスク基板4に接着されている(図1(a))。マスク基板4からペリクル1を剥離すると、ペリクル接着剤6の一部は、接着剤残渣7として残存ずる(図1(c))。
FIG. 1 is an explanatory schematic diagram showing that adhesive residue remains due to peeling of the pellicle, (a) is an explanatory schematic diagram showing a mask substrate system on which the pellicle is mounted, (b) is a partially enlarged view thereof, and (c). FIG. 4 is an explanatory schematic view showing that an adhesive residue is generated by peeling the pellicle. FIG. 2 is an explanatory schematic diagram for explaining a method for measuring an adhesive residue. FIG. 3 is a graph showing the state of the residue after treatment in Experimental Example 1.
The
ペリクルフレーム3上に残った接着剤残渣7は、必要があれば機械的な措置も含めて適宜の方策で除去され得るが、マスク基板4上に残存ずる接着剤残渣7は、マスクパターン5やマスク基板4に影響を与えないようにして除去される必要がある。
マスク基板4上に残存ずる接着剤残渣7の有無・量は、例えば、図2に示す測定法によって確認され得る。図2に示す測定法によれば、離接間隔を測定する近接距離センサーを備えた離接距離測端子8をペリクル接着跡9を横切ってスキャンすることによって確認される。
The
The presence / absence / amount of the
[実験例]
石英製のマスク基板表側にシリコーン樹脂を介してペリクルのフレームを貼り付け、石英基板の裏面より接着面に紫外線を照射した。この後にフレームを石英基板より剥がし、残渣除去のために以下の処理を施した。
参考:処理なし
処理1:80℃ 30%硫酸処理30分のみ
処理2:5質量%NH4OH処理10分(80℃)+30% 硫酸処理30分(80℃)
処理3:5質量%NH4OH処理30分(80℃)+30%硫酸処理30分(80℃)
処理4:5質量%NH4OH処理120分(80℃)+30%硫酸処理30分(80℃)
[Experimental example]
A pellicle frame was attached to the front side of the quartz mask substrate via a silicone resin, and the adhesive surface was irradiated with ultraviolet rays from the back side of the quartz substrate. Thereafter, the frame was peeled off from the quartz substrate, and the following treatment was performed to remove the residue.
Reference: No treatment 1: Treatment at 80 ° C. 30% sulfuric acid treatment for 30 minutes only 2: Treatment with 5 mass% NH 4 OH treatment for 10 minutes (80 ° C.) + 30% sulfuric acid treatment for 30 minutes (80 ° C.)
Treatment 3: 5% by mass NH 4 OH treatment 30 minutes (80 ° C.) + 30%
Treatment 4: 5% by mass NH 4 OH treatment 120 minutes (80 ° C.) + 30%
処理の後に処理前に残渣が残っていた箇所を段差計で断面形状の観察を行った。結果を図2に示す。この結果硫酸処理のみでは残渣は取りきれなかった(処理1)。しかし、アンモニア処理+硫酸処理においては、アンモニア処理時間が長くなるにつれ残渣が除去されていく様子が分かる。結果として処理3、4では残渣は実質的に観察されなかった。また、この実験の付随実験において、効果が確認できるアンモニアの濃度・温度は1質量%以上、50℃以上であることが実験的に判明した。
After the treatment, the cross-sectional shape of the portion where the residue remained before the treatment was observed with a step gauge. The results are shown in FIG. As a result, the residue was not completely removed only by the sulfuric acid treatment (treatment 1). However, in the ammonia treatment + sulfuric acid treatment, it can be seen that the residue is removed as the ammonia treatment time becomes longer. As a result, substantially no residue was observed in
[実験例2]
実験例1と同様の実験を、アンモニアの替わりにTMAHを用いて、行った。その結果、TMAHの濃度が3質量%、温度が80℃、処理時間4時間の際に残渣が観察されなくなった。
基本的に本発明においては、アルカリ処理、硫酸処理において、希釈溶液、低温処理でも効果はあるが、この場合、非常な長時間処理が必要となり現実的ではない。現実的な範囲として、アンモニアの濃度・温度は1質量%以上、50℃以上とし、TMAHは0.5質量%以上、50℃以上とした。また硫酸の濃度・温度は1質量%以上、50℃以上が経験的に妥当と考えられる。
[Experimental example 2]
An experiment similar to Experimental Example 1 was performed using TMAH instead of ammonia. As a result, no residue was observed when the concentration of TMAH was 3 mass%, the temperature was 80 ° C., and the treatment time was 4 hours.
Basically, in the present invention, dilute solution and low-temperature treatment are effective in alkali treatment and sulfuric acid treatment, but in this case, treatment for a very long time is required, which is not practical. As a practical range, the ammonia concentration and temperature were 1% by mass or more and 50 ° C. or more, and TMAH was 0.5% by mass or more and 50 ° C. or more. Further, it is considered empirically appropriate that the concentration / temperature of sulfuric acid is 1% by mass or more and 50 ° C. or more.
1:ペリクル
2:ペリクル膜
3:ペリクルフレーム
4:マスク基板
5:マスクパターン(金属パターン)
6:ペリクル接着剤
7:接着剤残渣
8:離接距離測端子
9:フレーム跡
1: Pellicle 2: Pellicle film 3: Pellicle frame 4: Mask substrate 5: Mask pattern (metal pattern)
6: Pellicle adhesive 7: Adhesive residue 8: Separation distance measuring terminal 9: Frame mark
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Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5924849A (en) * | 1982-08-02 | 1984-02-08 | Hitachi Ltd | Cleaning method of photomask |
JPS6088946A (en) * | 1983-10-21 | 1985-05-18 | Hoya Corp | Chromium mask washing method |
JPH02106929A (en) * | 1988-10-17 | 1990-04-19 | Matsushita Electron Corp | Washer for photo-mask |
JPH11133589A (en) * | 1997-10-31 | 1999-05-21 | Shin Etsu Chem Co Ltd | Pellicle for lithography |
JPH11231508A (en) * | 1998-02-17 | 1999-08-27 | Shin Etsu Chem Co Ltd | Method for preparing reproduced reticle and reproduced reticle |
JP2000305252A (en) * | 1999-04-20 | 2000-11-02 | Shin Etsu Chem Co Ltd | Method for peeling pellicle |
JP2002001243A (en) * | 2000-06-23 | 2002-01-08 | Kurita Water Ind Ltd | Method for cleaning electronic material |
JP2002082426A (en) * | 2000-09-06 | 2002-03-22 | Toray Ind Inc | Cleaning method and cleaning device for photomask |
JP2002131890A (en) * | 2000-10-27 | 2002-05-09 | Mitsubishi Electric Corp | Cleaning method and cleaning solvent for photomask |
JP2003068696A (en) * | 2001-05-22 | 2003-03-07 | Mitsubishi Chemicals Corp | Method for cleaning substrate surface |
JP2004000969A (en) * | 2002-05-31 | 2004-01-08 | Internatl Business Mach Corp <Ibm> | Method for removing silicone polymer deposit from electronic component |
JP2005064375A (en) * | 2003-08-19 | 2005-03-10 | Dainippon Screen Mfg Co Ltd | Method and device for processing substrate |
JP2006011048A (en) * | 2004-06-25 | 2006-01-12 | Hoya Corp | Method for manufacturing lithography mask and lithography mask |
JP2006091667A (en) * | 2004-09-27 | 2006-04-06 | Renesas Technology Corp | Photomask, and method and device for cleaning the same |
JP2006119624A (en) * | 2004-09-22 | 2006-05-11 | Hoya Corp | Mask blank substrate, mask blank, exposure mask, semiconductor device, and method for manufacturing them |
-
2008
- 2008-04-04 JP JP2008098529A patent/JP5131916B2/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5924849A (en) * | 1982-08-02 | 1984-02-08 | Hitachi Ltd | Cleaning method of photomask |
JPS6088946A (en) * | 1983-10-21 | 1985-05-18 | Hoya Corp | Chromium mask washing method |
JPH02106929A (en) * | 1988-10-17 | 1990-04-19 | Matsushita Electron Corp | Washer for photo-mask |
JPH11133589A (en) * | 1997-10-31 | 1999-05-21 | Shin Etsu Chem Co Ltd | Pellicle for lithography |
JPH11231508A (en) * | 1998-02-17 | 1999-08-27 | Shin Etsu Chem Co Ltd | Method for preparing reproduced reticle and reproduced reticle |
JP2000305252A (en) * | 1999-04-20 | 2000-11-02 | Shin Etsu Chem Co Ltd | Method for peeling pellicle |
JP2002001243A (en) * | 2000-06-23 | 2002-01-08 | Kurita Water Ind Ltd | Method for cleaning electronic material |
JP2002082426A (en) * | 2000-09-06 | 2002-03-22 | Toray Ind Inc | Cleaning method and cleaning device for photomask |
JP2002131890A (en) * | 2000-10-27 | 2002-05-09 | Mitsubishi Electric Corp | Cleaning method and cleaning solvent for photomask |
JP2003068696A (en) * | 2001-05-22 | 2003-03-07 | Mitsubishi Chemicals Corp | Method for cleaning substrate surface |
JP2004000969A (en) * | 2002-05-31 | 2004-01-08 | Internatl Business Mach Corp <Ibm> | Method for removing silicone polymer deposit from electronic component |
JP2005064375A (en) * | 2003-08-19 | 2005-03-10 | Dainippon Screen Mfg Co Ltd | Method and device for processing substrate |
JP2006011048A (en) * | 2004-06-25 | 2006-01-12 | Hoya Corp | Method for manufacturing lithography mask and lithography mask |
JP2006119624A (en) * | 2004-09-22 | 2006-05-11 | Hoya Corp | Mask blank substrate, mask blank, exposure mask, semiconductor device, and method for manufacturing them |
JP2006091667A (en) * | 2004-09-27 | 2006-04-06 | Renesas Technology Corp | Photomask, and method and device for cleaning the same |
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