JP2009231607A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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JP2009231607A
JP2009231607A JP2008076374A JP2008076374A JP2009231607A JP 2009231607 A JP2009231607 A JP 2009231607A JP 2008076374 A JP2008076374 A JP 2008076374A JP 2008076374 A JP2008076374 A JP 2008076374A JP 2009231607 A JP2009231607 A JP 2009231607A
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semiconductor device
lead
semiconductor element
protruding electrode
semiconductor
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Seiichiro Maki
誠一郎 牧
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Panasonic Corp
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Panasonic Corp
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  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having superior heat radiation and enabled in large current drive. <P>SOLUTION: A semiconductor element which has a first face and a second face which counters the first face, a lead formed of a plate-shaped body fitted to the first face of the semiconductor element, and a bump electrode formed of a plate-shaped body fitted to the second face of the semiconductor element are provided. The lead has a bent portion so that at least the top thereof is brought into the same level as the bump electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は半導体装置およびその製造方法にかかり、特にパワー用半導体装置に適した放熱性の高い半導体装置に用いられる実装構造に関するものである。   The present invention relates to a semiconductor device and a manufacturing method thereof, and particularly to a mounting structure used for a semiconductor device with high heat dissipation suitable for a power semiconductor device.

近年、携帯電話に代表される移動体通信機器の高性能化や小型化、さらには製品の需要サイクルの短期化が進む中、モジュール部品等に搭載されるトランジスタには、高性能化・小型薄型化・低コスト化への要求はいうまでもなく、接続抵抗を低減し、高出力のトランジスタの調整、短期間での開発および供給への要求が高まっている。   In recent years, as mobile communication devices typified by mobile phones have become higher performance and smaller, and the demand cycle of products has been shortened, transistors mounted on module parts have higher performance, smaller size and thinner. Needless to say, there is a need for reduction in connection resistance and cost, and there is an increasing demand for adjustment of high output transistors, development and supply in a short period of time.

パワーＭＯＳＦＥＴは、電源、携帯端末装置および自動車の電子装置を含む多数のアプリケーションに使用されている。このようなパワーＭＯＳＦＥＴなどのパワーデバイスは、放熱性が重要であることから、ボンディングワイヤに代えてボンディングリボンを用いたボンディングが用いられることがある。ボンディング強度は、デバイスの信頼性に大きな影響を与えるものであることから、複数の部分でボンディングを行なうようにし、ボンディングの接合強度を維持しつつ、ボンディングの差異にボンディングリボンに加える圧着荷重や超音波振動を小さくする方法が提案されている（特許文献１）。   Power MOSFETs are used in many applications, including power supplies, portable terminal devices, and automotive electronic devices. In such a power device such as a power MOSFET, since heat dissipation is important, bonding using a bonding ribbon may be used instead of the bonding wire. Bonding strength has a significant effect on device reliability. Therefore, bonding is performed at multiple parts, maintaining the bonding strength of the bonding, while maintaining the bonding strength of bonding, A method for reducing the acoustic vibration has been proposed (Patent Document 1).

特開２００６−１９６６２９公報JP 2006-196629 A

上記方法では、パワーデバイスの場合、半導体素子が動作することによって生じる発熱によって接合温度が高くなり、永久破壊につながるという問題があった。そこで図１０に示すように、半導体素子１０２の裏面にリードフレームの素子搭載部１０１を固着し、このリードフレームの素子搭載部は樹脂パッケージ１０４を介することなく、直接プリント基板（図示せず）に半田を配して実装される半導体装置が提案されている。１０３はボンディングワイヤである。このように放熱性を考慮した結果、永久破壊に至る前に、半導体素子からの発熱はリードフレームの素子搭載部を経由して放熱されることから、有効であるとされている。
しかしながら、近年の樹脂パッケージの軽薄短小化の影響を受け、市場では更なる小型パッケージが要求されており、それに伴い、リードフレームのチップアイランド部の面積も小さくなり、その結果半導体素子からのプリント基板への放熱面積も小さくなり、半導体素子からの発熱による放熱特性が限界となっている。 In the above method, in the case of a power device, there is a problem in that the junction temperature increases due to heat generated by the operation of the semiconductor element, leading to permanent destruction. Therefore, as shown in FIG. 10, the element mounting portion 101 of the lead frame is fixed to the back surface of the semiconductor element 102, and the element mounting portion of the lead frame is directly attached to a printed circuit board (not shown) without the resin package 104. A semiconductor device has been proposed which is mounted with solder. Reference numeral 103 denotes a bonding wire. As a result of considering heat dissipation as described above, heat from the semiconductor element is radiated through the element mounting portion of the lead frame before permanent destruction, and is thus effective.
However, under the influence of the recent reduction in the size and size of resin packages, there is a demand for further smaller packages in the market. As a result, the area of the chip island portion of the lead frame is reduced, and as a result, printed circuit boards made from semiconductor elements The heat dissipating area is also reduced, and the heat dissipating characteristics due to heat generated from the semiconductor element are limited.

本発明は前記実情に鑑みてなされたもので、放熱性が良好で大電流駆動の可能な半導体装置を提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that has good heat dissipation and can be driven with a large current.

上記目的を達成するために、本発明は、第１の面と、前記第１の面に対向する第２の面とを有する半導体素子と、前記半導体素子の前記第１の面に当接する板状体からなるリードと、前記半導体素子の前記第２の面に突出する突起電極とを備え、前記リードは、少なくとも先端が前記突起電極と同一レベルになるように折り曲げ部を有することを特徴とする。
この構成によれば、リードに、突起電極を形成した半導体素子を装着し、半導体素子を囲むようにリードを成型し先端が前記突起電極と同一レベルになるようにしていることから、このリードから放熱が効率よく行なわれ放熱性が大幅に向上する。またリードは、半導体素子の上面および側面を覆うため、空気との接触による放熱性も高い。さらにまたこれらにリードおよび突起電極は直接プリント基板などの実装基板に接続されることになるため、接触抵抗も低減可能である。 To achieve the above object, the present invention provides a semiconductor element having a first surface and a second surface opposite to the first surface, and a plate in contact with the first surface of the semiconductor element. A lead made of a solid body and a protruding electrode protruding on the second surface of the semiconductor element, wherein the lead has a bent portion so that at least a tip thereof is at the same level as the protruding electrode. To do.
According to this configuration, since the semiconductor element on which the protruding electrode is formed is attached to the lead and the lead is molded so as to surround the semiconductor element so that the tip is at the same level as the protruding electrode. Heat dissipation is performed efficiently and heat dissipation is greatly improved. Moreover, since the lead covers the upper surface and side surfaces of the semiconductor element, the heat dissipation by contact with air is also high. Furthermore, since the lead and the protruding electrode are directly connected to a mounting board such as a printed board, the contact resistance can be reduced.

また、上記リードフレームにおいて、前記半導体素子は前記突起電極およびリードの外表面が露呈するように樹脂封止されたものを含む。
この構成によれば、封止樹脂とリードとで、半導体素子の略周囲を囲むことになり、強度が高くさらには耐湿性も高い。 In the lead frame, the semiconductor element includes a resin-sealed one so that the protruding electrode and the outer surface of the lead are exposed.
According to this configuration, the sealing resin and the leads surround the semiconductor element substantially, and the strength is high and the moisture resistance is also high.

また、上記リードフレームにおいて、前記リードは前記封止樹脂の近傍で外側に折り曲げられたガルウィング形状であるものを含む。
この構成によれば、リードからの放熱性を高めることができるとともに、経常的に安定な実装が可能である。 In the lead frame, the lead may include a gull wing shape bent outward in the vicinity of the sealing resin.
According to this configuration, heat dissipation from the leads can be improved, and stable mounting can be performed on a regular basis.

また、上記リードフレームにおいて、前記リードは前記封止樹脂の近傍で内側に折り曲げられたＪベンド形状であるものを含む。
この構成によれば、さらなる実装面積の低減をはかることが可能である。 In the lead frame, the lead may include a J-bend shape bent inward in the vicinity of the sealing resin.
According to this configuration, it is possible to further reduce the mounting area.

また、上記リードフレームにおいて、前記リードの先端は前記突起電極面と同一面に位置するものを含む。
この構成によれば、実装基板への電気的接続が確実となり、さらに均一な放熱特性を得ることが可能である。 In the lead frame, the tip of the lead may be located on the same plane as the protruding electrode surface.
According to this configuration, the electrical connection to the mounting substrate is ensured, and further uniform heat dissipation characteristics can be obtained.

また、上記リードフレームにおいて、前記リードは封止樹脂の外端よりも外方に突出し、前記封止樹脂の外端から所定の距離を隔てた位置で折り曲げられたものを含む。
この構成によれば、封止樹脂と、リードとの間に空気の流れができ、リードは両面から放熱するため、より効率よい放熱特性を得ることが可能である。 In the lead frame, the lead protrudes outward from the outer end of the sealing resin and is bent at a predetermined distance from the outer end of the sealing resin.
According to this configuration, air can flow between the sealing resin and the lead, and the lead radiates heat from both surfaces, so that more efficient heat dissipation characteristics can be obtained.

また、上記リードフレームにおいて、前記リードは封止樹脂の外端よりも外方に突出し、前記封止樹脂の外端に密着するように折り曲げられたものを含む。
この構成によれば、封止樹脂と、リードとを密着性よく実装でき、半導体素子からの熱はリード及び突起電極から放熱するため、より効率よい放熱特性を得ることが可能である。 In the lead frame, the lead may be bent outwardly from the outer end of the sealing resin and bent so as to be in close contact with the outer end of the sealing resin.
According to this configuration, the sealing resin and the lead can be mounted with good adhesion, and heat from the semiconductor element is dissipated from the lead and the protruding electrode, so that more efficient heat dissipation characteristics can be obtained.

また本発明は、第１の面と、前記第１の面に対向する第２の面とに電気的接続用の電極を備えた半導体素子と、前記半導体素子の第２の面に突起電極を形成する工程と、板状体からなるリードを用意する工程と、前記半導体素子の前記第１の面に当接するように板状体からなるリードに、前記半導体素子を搭載する工程と、前記半導体素子の第２の面に当接するように板状体からなる突起電極を装着する工程と、前記半導体素子を覆うように樹脂封止を行なう工程と、前記リードを、少なくとも先端が前記突起電極と同一レベルになるように成型する工程とを有することを特徴とする。
この構成によれば、成型する工程でリードおよび突起電極のレベルを調整することができるため、リードと突起電極との高さのばらつきを低減し、信頼性の高い雰囲気を提供することができる。なおリードを形成する工程は、プレス加工などによってなされる。また、リードをタイバーによってサイドレールに接続して一体化しておくことにより、実装作業性が良好となる。 According to another aspect of the present invention, there is provided a semiconductor element provided with an electrode for electrical connection on a first surface and a second surface opposite to the first surface, and a protruding electrode on the second surface of the semiconductor element. A step of forming, a step of preparing a lead made of a plate-like body, a step of mounting the semiconductor element on a lead made of a plate-like body so as to abut on the first surface of the semiconductor element, and the semiconductor Mounting a protruding electrode made of a plate-like body so as to contact the second surface of the element; sealing the resin so as to cover the semiconductor element; and at least a tip of the lead and the protruding electrode And a step of molding so as to be at the same level.
According to this configuration, since the level of the lead and the protruding electrode can be adjusted in the molding step, variation in height between the lead and the protruding electrode can be reduced, and a highly reliable atmosphere can be provided. The step of forming the lead is performed by press working or the like. In addition, by connecting the leads to the side rails with a tie bar and integrating them, the mounting workability is improved.

また本発明は、前記突起電極を形成する工程は、真空蒸着法、めっき法、スタッドバンプ法のいずれかであるものを含む。   In the invention, the step of forming the protruding electrode includes any one of a vacuum deposition method, a plating method, and a stud bump method.

また本発明は、前記突起電極の突出高さを低くするレベリング工程を含む。
この構成によれば、突起電極のレベルを調整することができるため、リードと突起電極との高さのばらつきを低減し、信頼性の高い雰囲気を提供することができる。 The present invention also includes a leveling step of reducing the protruding height of the protruding electrode.
According to this configuration, since the level of the protruding electrode can be adjusted, variation in height between the lead and the protruding electrode can be reduced, and a highly reliable atmosphere can be provided.

以上詳述したように、本発明の半導体装置によれば、放熱性が良好で信頼性の高い半導体装置を提供することができる。
また、本発明の半導体装置の製造方法によれば、リードおよび突起電極の位置を、自由度をもたせて、揃えることができ、信頼性の高い半導体装置を提供することが可能となる。 As described above in detail, according to the semiconductor device of the present invention, it is possible to provide a highly reliable semiconductor device with good heat dissipation.
In addition, according to the method for manufacturing a semiconductor device of the present invention, the positions of the lead and the protruding electrode can be made uniform with a degree of freedom, and a highly reliable semiconductor device can be provided.

以下、本発明の実施の形態について、図面を参照しつつ詳細に説明する。
（実施の形態１）
図１は本発明の実施の形態１の半導体装置を示す断面説明図、図２は上面図である。この半導体装置は、第１の面２ａと、前記第１の面に対向する第２の面２ｂとを有する半導体素子２としてのダイオードチップと、前記半導体素子２の前記第１の面に当接する板状体からなるリード１と、前記半導体素子２の前記第２の面２ｂに形成された突起電極３とを備え、前記リード１は、少なくとも先端が前記突起電極３と同一レベルになるように折り曲げ部を有することを特徴とする。
ここで半導体素子２は半田６ａを介して第１の面２ａをリード１に接続されるとともに、第２の面２ｂを突起電極３に接続され、リード１および突起電極３の表面が露呈するように、封止樹脂（エポキシ樹脂）４で被覆されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is an explanatory cross-sectional view showing a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a top view. The semiconductor device is in contact with a diode chip as a semiconductor element 2 having a first surface 2a and a second surface 2b opposite to the first surface, and the first surface of the semiconductor element 2. A lead 1 made of a plate-like body and a protruding electrode 3 formed on the second surface 2b of the semiconductor element 2 are provided, and the lead 1 has at least the tip at the same level as the protruding electrode 3. It has a bent part.
Here, in the semiconductor element 2, the first surface 2a is connected to the lead 1 via the solder 6a, and the second surface 2b is connected to the protruding electrode 3, so that the surfaces of the lead 1 and the protruding electrode 3 are exposed. Further, it is covered with a sealing resin (epoxy resin) 4.

この構成によれば、リードおよび突起電極間に半導体素子を装着し、半導体素子を囲むようにリードおよび突起電極を成型し先端が前記突起電極と同一レベルになるようにしていることから、このリードおよび突起電極から放熱が効率よく行なわれ放熱性が大幅に向上する。またリードおよび突起電極は直接プリント基板に接続されることになるため、接触抵抗も大幅に低減することが可能である。   According to this configuration, the semiconductor element is mounted between the lead and the protruding electrode, and the lead and the protruding electrode are molded so as to surround the semiconductor element so that the tip is at the same level as the protruding electrode. In addition, heat is efficiently radiated from the protruding electrodes, and the heat dissipation is greatly improved. In addition, since the lead and the protruding electrode are directly connected to the printed board, the contact resistance can be greatly reduced.

次に、本発明の実施の形態の半導体装置の実装方法について説明する。
まず、厚さ０．１５ｍｍ程度の銅（Ｃｕ）板を用意し、金型成型により、図３に示すように、リード１を多数個配列し、タイバー１２を介してサイドレール１１に接続するように形状加工する。 Next, a semiconductor device mounting method according to an embodiment of the present invention will be described.
First, a copper (Cu) plate having a thickness of about 0.15 mm is prepared, and a large number of leads 1 are arranged by die molding as shown in FIG. 3 and connected to the side rails 11 through tie bars 12. Form the shape.

次いで、図４（ａ）に示すように、スタッドバンプ法により突起電極３を形成した半導体素子２の第１の面２ａに、半田６ａを介して図３に示したリードフレームのリード１を接合する。
この後、図４（ｂ）に示すように、リード１が上にくるようにし、この後、図４（ｃ）に示すように、射出成型により、封止樹脂４を形成する。
そして最後に、リード１のタイバー１２を切除し、リードを成型した後、突起電極高さをレベリングにより調整する。
このようにして図１および図２に示したような半導体装置が形成される。
なお、リードの成型とレベリングは同時でもよい。 Next, as shown in FIG. 4A, the lead 1 of the lead frame shown in FIG. 3 is joined to the first surface 2a of the semiconductor element 2 on which the protruding electrode 3 is formed by the stud bump method via the solder 6a. To do.
Thereafter, as shown in FIG. 4B, the lead 1 is placed on the upper side, and thereafter, as shown in FIG. 4C, the sealing resin 4 is formed by injection molding.
Finally, after the tie bar 12 of the lead 1 is cut and the lead is molded, the height of the protruding electrode is adjusted by leveling.
In this way, the semiconductor device as shown in FIGS. 1 and 2 is formed.
The lead molding and leveling may be performed simultaneously.

そして、この半導体装置をリード１と、突起電極３とによってプリント基板上に実装する。   Then, the semiconductor device is mounted on the printed board by the lead 1 and the protruding electrode 3.

この構成によれば、第１及び突起電極間に樹脂封止のなされた半導体素子２を装着しているため、このリード１と、突起電極３から放熱が効率よく行なわれ、半導体素子の大電流化が容易となる。また、動作時に半導体素子が発熱しても、この半導体素子の周囲を囲むリードおよび突起電極を経由して空気中およびプリント基板側に逃がすことができ、その結果半導体装置の長寿命化をはかることができる。従ってパワーデバイスなどの大電流素子への適用が可能となる。   According to this configuration, since the semiconductor element 2 sealed with resin is mounted between the first and projecting electrodes, heat is efficiently radiated from the lead 1 and the projecting electrode 3, and a large current of the semiconductor element is obtained. It becomes easy. In addition, even if the semiconductor element generates heat during operation, it can escape to the air and the printed circuit board via the leads and protruding electrodes surrounding the semiconductor element, thereby extending the life of the semiconductor device. Can do. Therefore, it can be applied to a large current element such as a power device.

なお、封止樹脂４は金型を用いた射出成型によって行なうようにしたが、これに限定されるものではなく、ポッティングなどの方法を用いることも可能である。また、リードの成型は封止樹脂４と間隔を隔てて形成したが、封止樹脂の側面に密着するように形成することも可能である。   The sealing resin 4 is formed by injection molding using a mold, but is not limited to this, and a method such as potting can also be used. In addition, the lead is formed at a distance from the sealing resin 4, but may be formed so as to be in close contact with the side surface of the sealing resin.

さらにまたリードの先端位置の調整が必要である場合も多いが、第１および第２の端子の成型を調整することで、プリント基板などの実装基板との接触性を高めることができる。   Furthermore, although it is often necessary to adjust the tip position of the lead, the contact with a mounting board such as a printed board can be improved by adjusting the molding of the first and second terminals.

また、Ｃｕ板の板厚は０．１５ｍｍとしたが、０．１ｍｍから０．２ｍｍの場合に、有効であることが確認されている。０．１ｍｍに満たないと、放熱性と強度とが十分ではない。また０．２ｍｍを越えるとＣｕ板の場合、加工性が低下する。なお、封止樹脂との接触面などにおいては凹凸面を形成してもよい。また、プレス加工などの凹凸加工に先立ち、コイニングにより薄肉化しておくことで、より成型が容易となる。   Further, the thickness of the Cu plate is 0.15 mm, but it has been confirmed that it is effective when the thickness is 0.1 mm to 0.2 mm. If it is less than 0.1 mm, heat dissipation and strength are not sufficient. On the other hand, when the thickness exceeds 0.2 mm, the workability is lowered in the case of a Cu plate. An uneven surface may be formed on the contact surface with the sealing resin. In addition, prior to uneven processing such as press processing, thinning by coining facilitates molding.

さらにまた、封止樹脂としては熱可塑性樹脂のほか熱硬化性樹脂でもよい。従って、射出成型を用いてもよいし、液状樹脂をポッティングにより充填して硬化させるようにしてもよい。   Furthermore, the sealing resin may be a thermosetting resin in addition to a thermoplastic resin. Therefore, injection molding may be used, or liquid resin may be filled by potting and cured.

（実施の形態２）
図５は本発明の実施の形態２の半導体装置を示す断面説明図、図６は斜視図（封止樹脂を除く）である。この半導体装置は、リードの先端が外側方向に広がっていわゆるガルウィング形状を構成したものである。
他部については前記実施の形態１の半導体装置と同様に形成されているため、同一部位には同一符号を付した。 (Embodiment 2)
FIG. 5 is an explanatory cross-sectional view showing the semiconductor device according to the second embodiment of the present invention, and FIG. 6 is a perspective view (excluding the sealing resin). This semiconductor device has a so-called gull wing shape in which the tip of the lead spreads outward.
Since other parts are formed in the same manner as the semiconductor device of the first embodiment, the same parts are denoted by the same reference numerals.

この構成によれば、効率よい放熱が実現される。   According to this configuration, efficient heat dissipation is realized.

なお、第１および突起電極の構造については、この構造に限定されることなく、適宜変更可能である。   The structures of the first and protruding electrodes are not limited to this structure and can be changed as appropriate.

（実施の形態３）
図７および図８は本発明の実施の形態３の半導体装置を示す説明図である。図７は断面説明図、図８は上面説明図である。
この半導体装置においては、封止樹脂４に沿ってリード１の周縁部１ｄを折り曲げ、Ｊベンド形状にしたものである。
他部については前記実施の形態１の半導体装置と同様に形成されているため、同一部位には同一符号を付した。 (Embodiment 3)
7 and 8 are explanatory views showing a semiconductor device according to the third embodiment of the present invention. 7 is a cross-sectional explanatory view, and FIG. 8 is a top explanatory view.
In this semiconductor device, the peripheral portion 1d of the lead 1 is bent along the sealing resin 4 to form a J-bend.
Since other parts are formed in the same manner as the semiconductor device of the first embodiment, the same parts are denoted by the same reference numerals.

この構成によれば、上記実施の形態２と比較して、放熱性は若干劣るかもしれないが、占有面積が小さくなり、また取り扱いも容易である。   According to this configuration, the heat dissipation may be slightly inferior to that of the second embodiment, but the occupied area is reduced and the handling is easy.

（実施の形態４）
図９は本発明の実施の形態４の半導体装置を示す説明図である。この半導体装置においては、前記実施の形態１の半導体装置のリードを封止樹脂４の側面に密着させた点で前記実施の形態１の半導体装置と異なるのみであり他部については前記実施の形態１の半導体装置と同様に形成されているため、同一部位には同一符号を付した。 (Embodiment 4)
FIG. 9 is an explanatory view showing a semiconductor device according to a fourth embodiment of the present invention. This semiconductor device is different from the semiconductor device of the first embodiment only in that the lead of the semiconductor device of the first embodiment is brought into close contact with the side surface of the sealing resin 4, and the other parts are the same as those of the first embodiment. Since the semiconductor device is formed in the same manner as the semiconductor device 1, the same symbol is assigned to the same part.

この構成によれば、リード１の上面部１ａが封止樹脂を介して半導体素子と密着しているため熱伝導により効率よく放熱がなされる。また、封止樹脂４とリード１および突起電極３とで、半導体素子２の略周囲を囲むことになり、強度が高くさらには耐湿性も高い。   According to this configuration, since the upper surface portion 1a of the lead 1 is in close contact with the semiconductor element via the sealing resin, heat is efficiently radiated by heat conduction. In addition, the sealing resin 4, the lead 1, and the protruding electrode 3 surround substantially the periphery of the semiconductor element 2, and the strength is high and the moisture resistance is also high.

なお、前記実施の形態では、リードを銅（Ｃｕ）で構成したがこのほか、リードフレーム材料としては、銅（Ｃｕ）系材料、又はその合金など、熱伝導性の良好な材料であれば適用可能である。また、導電性も良好であるのが望ましい。   In the above-described embodiment, the lead is made of copper (Cu). In addition, the lead frame material may be any material having good thermal conductivity, such as a copper (Cu) -based material or an alloy thereof. Is possible. It is also desirable that the conductivity be good.

また、リードは板厚が大きいため、比抵抗が小さく、低インピーダンスでかつ良好な接続が可能となる。   Moreover, since the lead has a large plate thickness, the specific resistance is small, and a low impedance and good connection can be achieved.

また、上記リードフレームにおいて、前記リードは硬度が小さいもので形成すれば、リードの曲げ加工が容易となる。   In the lead frame, if the lead is formed with a low hardness, the bending of the lead becomes easy.

またダイボンディングに際しては、半田を用いたが、導電性ペーストなど、熱伝導性の良好な導電性材料であればよい。また、半導体素子とリードフレームとの電気的接続を行なわない場合には熱伝導性の絶縁性接着剤を用いるのが望ましい。
また突起電極は、真空蒸着、めっき、スタッドバンプ法など適宜形成可能である。 In addition, solder is used for die bonding, but any conductive material having good thermal conductivity, such as a conductive paste, may be used. In addition, when electrical connection between the semiconductor element and the lead frame is not performed, it is desirable to use a heat conductive insulating adhesive.
The protruding electrode can be appropriately formed by vacuum deposition, plating, stud bump method or the like.

また、前記実施の形態では２端子素子について説明したが、３端子素子以上あるいは多端子素子にも適用可能であることはいうまでもない。例えば他の端子はリードに直交した側を用いて形成するようにしてもよい。   Further, although the two-terminal element has been described in the above embodiment, it is needless to say that the present invention can be applied to a three-terminal element or more or a multi-terminal element. For example, other terminals may be formed using the side orthogonal to the leads.

さらにまた、前記実施の形態では、ダイオードについて説明したが、シリコン基板を用いたバイポーラトランジスタ、絶縁ゲートバイポーラトランジスタ、化合物半導体基板を用いたＨＢＴにも適用可能である。   Furthermore, although the diode has been described in the above embodiment, the present invention can be applied to a bipolar transistor using a silicon substrate, an insulated gate bipolar transistor, and an HBT using a compound semiconductor substrate.

本発明の半導体装置によれば、放熱性の向上をはかることができることから、大電流用デバイスを必要とする種々の電子機器に適用可能である。   According to the semiconductor device of the present invention, the heat dissipation can be improved, and therefore, it can be applied to various electronic devices that require a device for large current.

本発明の実施の形態１の半導体装置を示す断面図Sectional drawing which shows the semiconductor device of Embodiment 1 of this invention 本発明の実施の形態１の半導体装置の上面図The top view of the semiconductor device of Embodiment 1 of this invention 本発明の実施の形態１におけるリードを示す上面図A top view showing a lead in Embodiment 1 of the present invention 本発明の実施の形態１の半導体装置の製造工程図Manufacturing process diagram of the semiconductor device according to the first embodiment of the present invention. 本発明の実施の形態２の半導体装置を示す断面図Sectional drawing which shows the semiconductor device of Embodiment 2 of this invention 本発明の実施の形態２の半導体装置の上面図The top view of the semiconductor device of Embodiment 2 of this invention 本発明の実施の形態３の半導体装置を示す断面図Sectional drawing which shows the semiconductor device of Embodiment 3 of this invention 本発明の実施の形態３の半導体装置を示す断面図Sectional drawing which shows the semiconductor device of Embodiment 3 of this invention 本発明の実施の形態４の半導体装置を示す断面図Sectional drawing which shows the semiconductor device of Embodiment 4 of this invention 従来例の樹脂封止型半導体装置の断面図Sectional view of a conventional resin-encapsulated semiconductor device

符号の説明Explanation of symbols

１ リード
２ 半導体素子
３ 突起電極
４ 樹脂
６（６ａ） 半田 1 Lead 2 Semiconductor Element 3 Protruding Electrode 4 Resin 6 (6a) Solder

Claims (10)

第１の面と、前記第１の面に対向する第２の面とを有する半導体素子と、
前記半導体素子の前記第１の面に当接する板状体からなるリードと、
前記半導体素子の前記第２の面に突出する突起電極と、
を備え、
前記リードは、少なくとも先端が前記突起電極と同一レベルになるように折り曲げ部を有する半導体装置。 A semiconductor element having a first surface and a second surface opposite to the first surface;
A lead made of a plate-like body that comes into contact with the first surface of the semiconductor element;
A protruding electrode protruding on the second surface of the semiconductor element;
With
The lead has a bent portion so that at least a tip thereof is at the same level as the protruding electrode. 請求項１に記載の半導体装置であって、
前記半導体素子は前記突起電極および前記リードの外表面が露呈するように樹脂封止された半導体装置。 The semiconductor device according to claim 1,
A semiconductor device in which the semiconductor element is resin-sealed so that the protruding electrode and the outer surface of the lead are exposed. 請求項１または２に記載の半導体装置であって、
前記リードは前記第２の面の近傍で外側に折り曲げられたガルウィング形状である半導体装置。 The semiconductor device according to claim 1, wherein
The lead is a semiconductor device having a gull wing shape that is bent outward in the vicinity of the second surface. 請求項１または２に記載の半導体装置であって、
前記リードは前記第２の面の近傍で内側に折り曲げられたＪベンド形状である半導体装置。 The semiconductor device according to claim 1, wherein
The lead is a semiconductor device having a J-bend shape bent inward in the vicinity of the second surface. 請求項１乃至４のいずれかに記載の半導体装置であって、
前記リードの先端は前記突起電極と同一面に位置する半導体装置。 The semiconductor device according to claim 1,
A semiconductor device in which a tip of the lead is located on the same plane as the protruding electrode. 請求項２乃至５のいずれかに記載の半導体装置であって、
前記リードは封止樹脂の外端よりも外方に突出し、前記封止樹脂の外端から所定の距離を隔てた位置で折り曲げられた半導体装置。 A semiconductor device according to any one of claims 2 to 5,
A semiconductor device in which the lead protrudes outward from the outer end of the sealing resin and is bent at a predetermined distance from the outer end of the sealing resin. 請求項２乃至５のいずれかに記載の半導体装置であって、
前記リードは封止樹脂の外端よりも外方に突出し、前記封止樹脂の外端に密着するように折り曲げられた半導体装置。 A semiconductor device according to any one of claims 2 to 5,
A semiconductor device in which the lead protrudes outward from the outer end of the sealing resin and is bent so as to be in close contact with the outer end of the sealing resin. 第１の面と、前記第１の面に対向する第２の面とに電気的接続用の電極を備えた半導体素子と、
前記半導体素子の第２の面に突起電極を形成する工程と、
板状体からなるリードを用意する工程と、
前記半導体素子の前記第１の面に当接するように板状体からなるリードに、前記半導体素子を搭載する工程と、
前記半導体素子を覆うように樹脂封止を行なう工程と、
前記リードを、少なくとも先端が前記突起電極と同一レベルになるように成型する工程とを有する半導体装置の製造方法。 A semiconductor element including an electrode for electrical connection on a first surface and a second surface opposite to the first surface;
Forming a protruding electrode on the second surface of the semiconductor element;
Preparing a lead made of a plate-like body;
Mounting the semiconductor element on a lead made of a plate-like body so as to come into contact with the first surface of the semiconductor element;
Performing resin sealing so as to cover the semiconductor element;
Forming the lead so that at least a tip thereof is at the same level as the protruding electrode. 請求項８に記載の半導体装置の製造方法であって、
前記突起電極を形成する工程は、真空蒸着法、めっき法、スタッドバンプ法のいずれかである半導体装置の製造方法。 A method for manufacturing a semiconductor device according to claim 8, comprising:
The step of forming the protruding electrode is a method for manufacturing a semiconductor device, which is one of a vacuum deposition method, a plating method, and a stud bump method. 請求項８または９に記載の半導体装置の製造方法であって、
前記突起電極の突出高さを低くするレベリング工程を含む半導体装置の製造方法。 A manufacturing method of a semiconductor device according to claim 8 or 9,
A manufacturing method of a semiconductor device including a leveling step of reducing a protruding height of the protruding electrode.
JP2008076374A 2008-03-24 2008-03-24 Semiconductor device and its manufacturing method Withdrawn JP2009231607A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631961A (en) * 2023-07-21 2023-08-22 青岛泰睿思微电子有限公司 Small-sized DFN packaging chip and wire bonding device thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631961A (en) * 2023-07-21 2023-08-22 青岛泰睿思微电子有限公司 Small-sized DFN packaging chip and wire bonding device thereof
CN116631961B (en) * 2023-07-21 2023-12-08 青岛泰睿思微电子有限公司 Small-sized DFN packaging chip and wire bonding device thereof

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