JP2009186475A - 画像化検出器 - Google Patents
画像化検出器 Download PDFInfo
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- JP2009186475A JP2009186475A JP2009023700A JP2009023700A JP2009186475A JP 2009186475 A JP2009186475 A JP 2009186475A JP 2009023700 A JP2009023700 A JP 2009023700A JP 2009023700 A JP2009023700 A JP 2009023700A JP 2009186475 A JP2009186475 A JP 2009186475A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 79
- 230000005855 radiation Effects 0.000 claims abstract description 42
- 230000005865 ionizing radiation Effects 0.000 claims abstract description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 104
- 239000000758 substrate Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000013459 approach Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
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- 230000000694 effects Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
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- 239000002250 absorbent Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
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- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Multimedia (AREA)
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- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
【解決手段】ハイブリッド画像化検出器が、X線又は電子放射線又は他のイオン化放射線のようなイオン化放射線を検出するためにある。検出器は、読出しチップ(20)上にセンサ(10)を有する。センサ(10)は、異なる材料で異なる放射線吸収特性を有する重なり合った複数のセンサ材料層(12,14)を含む。材料は、例えば、Si及びSiGe、Si及びGe、又は、Si及びアモルファスSeであり得る。読出しチップは、それが閾値より上のパルスを検出するときに単一の計数を記録する光子計算読出しチップである。
【選択図】図1
Description
12 シリコン基板、第一センサ材料層
14 エピタキシャル層14、第二センサ材料層
16 バッファ層
18 ロッド
20 読出しチップ
22 光子計算検出器
24 バイアス回路
30 バンプ結合
32 オーム電極
40 陽極ロッド
42 オーム接点、陰極ロッド
Claims (16)
- 所定エネルギ範囲のX線又は電子のようなイオン化放射線を検出するための画像化検出器であって、
読出し回路構成を含む読出しチップを含み、
複数の画素の上でイオン化放射線を吸収するためのセンサを含み、該センサは、前記読出しチップに電気的に接続され、
前記読出しチップは、それが閾電荷よりも大きい光子又は電子によって励起される電荷を検出するときに、画素内のパルスを記録する回路構成を有し、
前記センサは、異なる放射線吸収特性を有する、重なり合った異なる材料の複数のセンサ材料層を含み、該複数のセンサ材料層は、前記所定エネルギ範囲に亘って入射放射線の少なくとも70%を吸収し、
前記センサ材料層は、第一半導体の第一センサ材料層と、第二半導体の第二センサ材料層と、前記第一センサ材料層と前記第二センサ材料層との間のバッファ層とを含み、該バッファ層は、前記第一センサ材料層の材料から前記第二センサ材料層の材料に変化する勾配付き組成を有する、
画像化検出器。 - 前記第一材料層及び前記第二材料層は、前記所定エネルギ範囲内のイオン化放射線が、前記第一材料層内に吸収されるときに、少なくとも第一電荷を生成し、且つ、前記第二材料層内に吸収されるときに、少なくとも第二電荷を生成する特性を有し、前記閾電荷は、前記第一電荷及び前記第二電荷のより高い方の45%と60%との間にある、請求項1に記載の検出器。
- 前記読出しチップは、イオン化放射線が検出されるときに、電荷の量に対応する電圧パルスを生成し、該電圧パルスを閾値と比較し、前記電圧パルスが前記閾値を超えるパルスだけ計算するよう構成される、請求項2に記載の検出器。
- 前記複数のセンサ材料層のそれぞれは、前記所定エネルギ範囲内少なくとも1つのエネルギで入射放射線の少なくとも20%を吸収する、請求項1又は2に記載の検出器。
- 前記第一センサ材料層は、前記読出しチップに隣接し、前記第二センサ材料層は、前記第一センサ材料層の上にあり、前記第二センサ材料層は、前記所定エネルギ範囲に亘って入射放射線の少なくとも30%、好ましくは、入射放射線の少なくとも50%を吸収する、請求項1乃至3のうちのいずれか1項に記載の検出器。
- 前記センサ材料層は、Siの1つの材料層と、Ge又はSiGeの他の材料層とを含む、請求項1乃至5のうちのいずれか1項に記載の検出器。
- 前記第一センサ材料層はSiであり、前記第二センサ材料層はGe又はSiGeである、請求項1乃至6のうちのいずれか1項に記載の検出器。
- 交互の第一材料及び第二材料層と、前記第一材料層と前記第二材料層との間のバッファ層とを含む、複数層を有する、請求項1乃至7のうちのいずれか1項に記載の検出器。
- 少なくとも2つの第一材料層と、少なくとも2つの第二材料層とを含む、請求項8に記載の検出器。
- 前記第二材料層の上にキャッピング層をさらに含む、請求項1乃至9のうちのいずれか1項に記載の検出器。
- 前記キャッピング層は、1μmから10μmの範囲内の厚さを有するSiの層である、請求項10に記載の検出器。
- 前記キャッピング層内に形成されるオーム接点をさらに含む、請求項10又は11に記載の検出器。
- 前記センサは、前記第一センサ材料層及び前記第二センサ材料層を通じて延びる複数の伝導性ロッドを含み、該ロッドは、前記読出しチップに接続される、請求項1乃至12のうちのいずれか1項に記載の検出器。
- 前記第一センサ材料層及び前記第二センサ材料層の少なくとも1つは、非晶質である、請求項13に記載の検出器。
- 前記非晶質第二センサ材料層は、非晶質セレンから成る、請求項14に記載の検出器。
- 前記読出しチップは、複数の読出しチップ回路を含み、各読出しチップ回路は、単一の画素に電気的に接続される、請求項1乃至15のうちのいずれか1項に記載の検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP08151089.3A EP2088451B1 (en) | 2008-02-05 | 2008-02-05 | Imaging detector |
EP08151089.3 | 2008-02-05 |
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JP2009186475A true JP2009186475A (ja) | 2009-08-20 |
JP5254066B2 JP5254066B2 (ja) | 2013-08-07 |
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US (1) | US7858945B2 (ja) |
EP (1) | EP2088451B1 (ja) |
JP (1) | JP5254066B2 (ja) |
CN (1) | CN101521246B (ja) |
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WO2016157332A1 (ja) * | 2015-03-27 | 2016-10-06 | パイオニア株式会社 | 撮像装置 |
WO2022190321A1 (ja) * | 2021-03-11 | 2022-09-15 | 国立大学法人静岡大学 | 放射線撮像装置 |
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WO2007072024A1 (en) * | 2005-12-21 | 2007-06-28 | Durham Scientific Crystals Limited | Semiconductor device with a bulk single crystal on a substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016504567A (ja) * | 2012-11-09 | 2016-02-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 検出器結晶のためのサブバンド赤外照射 |
WO2016157332A1 (ja) * | 2015-03-27 | 2016-10-06 | パイオニア株式会社 | 撮像装置 |
WO2022190321A1 (ja) * | 2021-03-11 | 2022-09-15 | 国立大学法人静岡大学 | 放射線撮像装置 |
Also Published As
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CN101521246B (zh) | 2013-02-27 |
US7858945B2 (en) | 2010-12-28 |
US20090200478A1 (en) | 2009-08-13 |
EP2088451B1 (en) | 2016-01-06 |
CN101521246A (zh) | 2009-09-02 |
JP5254066B2 (ja) | 2013-08-07 |
EP2088451A1 (en) | 2009-08-12 |
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