JP2009170885A - 有機電界発光素子及びその製造方法 - Google Patents
有機電界発光素子及びその製造方法 Download PDFInfo
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- JP2009170885A JP2009170885A JP2008306326A JP2008306326A JP2009170885A JP 2009170885 A JP2009170885 A JP 2009170885A JP 2008306326 A JP2008306326 A JP 2008306326A JP 2008306326 A JP2008306326 A JP 2008306326A JP 2009170885 A JP2009170885 A JP 2009170885A
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- transport layer
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- H—ELECTRICITY
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Abstract
【解決手段】本発明は、第1電極110と、第1電極110上に位置する発光層120と、発光層120上に位置する第1電子輸送層131と、第1電子輸送層131上に位置し、第1電子輸送層131の最低非占有分子軌道(LUMO)エネルギーレベルの絶対値よりも小さい最低非占有分子軌道エネルギーレベルの絶対値を有する第2電子輸送層132と、第2電子輸送層132上に位置する第2電極140と、を含むことによって、低電圧下では電子注入及び輸送を抑制して電流密度を低く維持することができ、それによってブラック実現時に素子発光を抑制することのできる有機電界発光素子に関する。
【選択図】図1A
Description
第1電極としてITOを130nm厚さで形成した。続いて、前記第1電極上に正孔注入層としてIDE−406(出光社製)を210nmの厚さで形成し、正孔輸送層としてはNPBを20nm厚さで形成した。前記正孔輸送層上にホストとしてCBPに、ドーパンドとしてIr(piq)3を15wt%の濃度で混合して40nmの厚さで赤色発光層を形成した。前記赤色発光層上に第1電子輸送層としてAlq3を30nm厚さで形成した。前記Alq3の最低非占有分子軌道エネルギーレベルは−3.1eVであった。続いて、前記第1電子輸送層上に第2電子輸送層として、BAlqを10nm厚さで形成した。前記BAlqの最低非占有分子軌道エネルギーレベルは−2.9eVであった。次いで、前記第2電子輸送層上に第2電極としてMgAg膜を厚さ160Åで形成し、前記MgAg膜上にAl膜を1000Åの厚さで形成した。
第1電極としてITOを130nm厚さで形成した。続いて、前記第1電極上に正孔注入層としてIDE−406(出光社製)を210nmの厚さで形成し、正孔輸送層としてはNPBを20nm厚さで形成した。前記正孔輸送層上にホストとしてCBPに、ドーパンドとしてIr(piq)3を15wt%の濃度を混合して40nmの厚さで赤色発光層を形成した。前記赤色発光層上に第1電子輸送層としてAlq3を30nm厚さで形成した。続いて、前記第1電子輸送層上に第2電子輸送層なしに、第2電極としてMgAg膜を厚さ160Åで形成し、前記MgAg膜上にAl膜を1000Åの厚さで形成した。
120 発光層
131 第1電子輸送層、
132 第2電子輸送層、
140 第2電極、
150 正孔注入層、
160 正孔輸送層、
170 電子抑制層、
180 正孔抑制層。
Claims (12)
- 第1電極と、
前記第1電極上に位置する発光層と、
前記発光層上に位置する第1電子輸送層と、
前記第1電子輸送層上に位置し、前記第1電子輸送層の最低非占有分子軌道(LUMO)エネルギーレベルの絶対値よりも小さい最低非占有分子軌道エネルギーレベルの絶対値を有する第2電子輸送層と、
前記第2電子輸送層上に位置する第2電極と、
を含むことを特徴とする有機電界発光素子。 - 前記第2電子輸送層の最低非占有分子軌道エネルギーレベルの絶対値は、前記第1電子輸送層の最低非占有分子軌道エネルギーレベルの絶対値よりも0.2eV以上小さいことを特徴とする請求項1に記載の有機電界発光素子。
- 前記第2電子輸送層の最低非占有分子軌道エネルギーレベルの絶対値は、前記第1電子輸送層の最低非占有分子軌道エネルギーレベルの絶対値よりも0.2ないし1eV以下小さいことを特徴とする請求項1に記載の有機電界発光素子。
- 前記第1電子輸送層の電子移動度は、前記第2電子輸送層の電子移動度よりも大きいことを特徴とする請求項1に記載の有機電界発光素子。
- 前記第1電子輸送層の電子移動度は1×10−6cm2/V・s以上であることを特徴とする請求項4に記載の有機電界発光素子。
- 前記第2電子輸送層の電子移動度は1×10−8cm2/V・sないし1×10−6cm2/V・s未満であることを特徴とする請求項4に記載の有機電界発光素子。
- 前記第2電子輸送層の厚さは1ないし20nmであることを特徴とする請求項1に記載の有機電界発光素子。
- 前記第1電子輸送層及び前記第2電子輸送層のそれぞれは、オキシゾール系化合物、イソキサゾール系化合物、トリアゾール系化合物、イソチアゾール系化合物、オキサジアゾール系化合物、チアジアゾール系化合物、ペリレン系化合物、Alq3(トリス(8−キノリノラト)−アルミニウム(tris(8−quinolinolato)−aluminium))、BAlq、SAlq、Almq3、Gaq’2OPiv、Gaq’2OAc、2(Gaq’2)、BPQ(ビス(フェニルキノクサリン))、TPQ(starburst トリス(フェニルキノクサリン))、1、3、5−トリアジン、BCP(2、9−ジメチル−4、7−ジフェニル−1、10−フェナントロリン)、BeBq2(ビス(10−ヒドロキシベンゾ[h]キノラート)ベリリウム)、TPBI(2、2’、2”−(1、3、5−ベンズインエトリイル)−トリス(1−フェニル−1−H−ベンゾイミタゾール))、E3(トフルオレン)、及びCBP(4、4’−N、N’−ジカルバゾール−ビフェニル)からなるグループから選択された一つであることを特徴とする請求項1に記載の有機電界発光素子。
- 前記第1電子輸送層はAlq3であり、前記第2電子輸送層はBAlqであることを特徴とする請求項8に記載の有機電界発光素子。
- 前記第1電子輸送層はCBPであり、前記第2電子輸送層はBAlqであることを特徴とする請求項8に記載の有機電界発光素子。
- 前記有機電界発光素子にブラック実現のため4V以下の低電圧が印加された場合、0.01mA/cm2以下の電流密度値を有することを特徴とする請求項1に記載の有機電界発光素子。
- 第1電極を形成する工程と、
前記第1電極上に発光層を形成する工程と、
前記発光層上に第1電子輸送層を形成する工程と、
前記第1電子輸送層上に前記第1電子輸送層の最低非占有分子軌道(LUMO)エネルギーレベルの絶対値よりも小さい最低非占有分子軌道エネルギーレベルの絶対値を有する第2電子輸送層を形成する工程と、
前記第2電子輸送層上に第2電極を形成する工程と、
を含むことを特徴とする有機電界発光素子の製造方法。
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