JP2009113133A

JP2009113133A - Cmp-pad conditioner

Info

Publication number: JP2009113133A
Application number: JP2007286847A
Authority: JP
Inventors: Hiroshi Ishizuka; 博石塚
Original assignee: Individual
Current assignee: Individual
Priority date: 2007-11-05
Filing date: 2007-11-05
Publication date: 2009-05-28

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conditioner capable of efficiently achieving a sufficiently controlled surface accuracy on the surface of a CMP-pad during the conditioning of the pad. <P>SOLUTION: This conditioner includes a generally circular and flat polisher formed of a rigid flat circular base plate and a sintered diamond layer. In the polisher, the cemented carbide surface serving as a joining surface is joined to one circular or annular surface of the base plate. A linear groove group is formed in the sintered diamond layer, and a plurality of polishing projections of the same height are arranged along the groove group. The polishing projections are formed in a quadrangle columnar shape in the cross section vertical to the axis thereof. The outer side surface of each of the polishing projections comprises, at the top part, a reinforcement part diverged at 0-30° relative to a reference datum vertical to the base plate. The rear surface of each of the polishing projections includes a recess tilted downward at 5-45° relative to a reference datum parallel to the base plate. The angle between the outer side surface and the rear surface of each of the polishing projections is smaller than 90°. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、硬質ウレタンや各種半導体材料を高平面度かつ高能率で加工可能であり、特にＣＭＰ用パッド・コンディショナーとして使用可能な研磨工具に関する。 The present invention relates to a polishing tool capable of processing hard urethane and various semiconductor materials with high flatness and high efficiency, and particularly usable as a pad conditioner for CMP.

近年、配線の多層化や集積度の進んだ超ＬＳＩデバイスの製造において、層間絶縁膜やシリコン等金属膜ウェハの平坦化にＣＭＰ工程が用いられている。ＣＭＰ工程において研磨パッド(一般に硬質発泡ポリウレタン製)の高い平坦度及びウェハ研磨速度を維持するためには、頻繁にパッドの表面を精密研磨によりコンディショニングする必要があり、この目的のために、パッド・コンディショナーと呼ばれる研磨工具が使用されている。 In recent years, a CMP process is used to planarize a metal film wafer such as an interlayer insulating film and silicon in the manufacture of a VLSI multilayered and highly integrated VLSI device. In order to maintain the high flatness and wafer polishing speed of the polishing pad (generally made of rigid foam polyurethane) in the CMP process, it is necessary to condition the surface of the pad frequently by precision polishing. A polishing tool called a conditioner is used.

このようなコンディショナーとしては、超砥粒、特にダイヤモンド粒子を電着により金属円板に固定した構成の、多様な工具が公知である。例えばその一つにおいては、円板形基台の円形表面の中央に、砥粒を配置しない中空領域を、その外側に第一の、さらにその外側に第二の砥粒層領域をそれぞれ設ける。第一の砥粒層領域には、間隔をおいて小砥粒層部が複数列設けられ、各小砥粒層部は、略部分球面状を呈する***部の表面に、超砥粒を金属めっき相で固着したものである。第二の砥粒層領域は、リング状の円周***部に超砥粒を金属めっき相で固着して構成されている。
特開２００２−３３７０５０号公報 As such a conditioner, various tools having a configuration in which superabrasive grains, particularly diamond particles, are fixed to a metal disk by electrodeposition are known. For example, in one of them, a hollow area where no abrasive grains are arranged is provided at the center of the circular surface of the disk-shaped base, and a first abrasive grain area is provided outside the hollow area. In the first abrasive layer region, a plurality of rows of small abrasive layer portions are provided at intervals, and each of the small abrasive layer portions is made of metal with superabrasive grains on the surface of a raised portion having a substantially spherical shape. It is fixed in the plating phase. The second abrasive layer region is configured by adhering superabrasive grains to a ring-shaped circumferential ridge with a metal plating phase.
JP 2002-337050 A

パッドの表面には高精度の表面粗さ及び平坦度が要求され、その程度は回路の微細化の進行につれて益々厳しくなってきている。このようなパッドの表面を高効率で加工するためには、コンディショナーは、適切に配置された、充分な硬さを持つ研磨点を多数備えていなければならない。 The surface of the pad is required to have high-precision surface roughness and flatness, and the degree becomes increasingly severe as circuit miniaturization progresses. In order to process the surface of such a pad with high efficiency, the conditioner must have a number of polishing points that are appropriately arranged and have sufficient hardness.

しかしながら、従来多用されているダイヤモンド粒子を金属基板に固着したタイプの工具では、コンディショニングにおける材料除去効率が必ずしも充分に高いとは言えなかった。 However, it has not been said that the material removal efficiency in conditioning is sufficiently high with a tool of the type in which diamond particles that have been frequently used are fixed to a metal substrate.

ところで、ダイヤモンドやｃ−ＢＮ等、超砥粒の粉末を超硬合金ブロックと共に超高圧高温下で処理して得られた超砥粒複合焼結体から、ワイヤ放電加工などの手法により特定形状の部品を切り出し、超硬合金層で裏打ちされた焼結超砥粒層を有する各種のチップや研磨部材を製造することは公知である。 By the way, from a superabrasive composite sintered body obtained by processing superabrasive powder such as diamond and c-BN together with a cemented carbide block under ultrahigh pressure and high temperature, a specific shape is obtained by a technique such as wire electric discharge machining. It is known to produce various chips and abrasive members having a sintered superabrasive layer cut out of a part and lined with a cemented carbide layer.

本発明者は先に、このような超砥粒複合焼結体で円板状回転研磨工具の研磨面を構成し、該研磨面に、頂部が一様なレベル上にある複数個の研磨島乃至研磨突起を設けた研磨工具を開発し、特許出願した。しかしこれらの工具では、パッドのコンディショニング工程において、パッドの研磨速度に改善の余地があることが判明した。 The present inventor previously formed a polishing surface of a disc-shaped rotary polishing tool with such a superabrasive composite sintered body, and a plurality of polishing islands whose tops are on a uniform level on the polishing surface. A polishing tool provided with polishing protrusions was developed and a patent application was filed. However, these tools have been found to have room for improvement in the pad polishing rate in the pad conditioning process.

従って本発明の主な目的は、研磨パッドのコンディショニングにおいて、充分に制御された表面精度をもつ研磨パッド表面を効率的に達成可能なコンディショナーを提供することにある。 Accordingly, it is a primary object of the present invention to provide a conditioner that can efficiently achieve a polishing pad surface with well-controlled surface accuracy in conditioning of the polishing pad.

本発明の別の目的は、シリコンや他の材種の金属の薄板の高精度・高効率の研磨に適した円板型回転型研磨工具を提供することにある。 Another object of the present invention is to provide a disk-type rotary polishing tool suitable for high-accuracy and high-efficiency polishing of silicon and other thin metal sheets.

本発明の要旨とするところは、剛性材からなり平らな円板状乃至円環状表面を有する基板、及び超硬合金体と隣接し層状に焼結一体化された焼結ダイヤモンド層で構成される全体として円板状乃至円環状を呈する平らな研磨体を有し、該研磨体は、超硬合金面を接合面として該基板の一方の円形又は円環状面と接合され、上記焼結ダイヤモンド層に線状溝群が形成され、かつ該溝群に沿って一様な高さの複数個の研磨突起が整列配置されたパッド・コンディショナーであって、該研磨突起は軸に垂直な断面において四辺形の柱状を呈し、研磨突起頂部において外周面は基板に垂直な基準面に対して0乃至30°の傾斜角αで裾広がり状を呈する補強部を有し、また各外方側面の背面は基板に平行な基準面に対する傾斜角βが5°乃至45°で下方に傾斜した逃げ面を有し、かつ外方側面と背面との為す面角(内角)γが90°よりも小さいことを特徴とするパッド・コンディショナーにある。 The gist of the present invention consists of a substrate made of a rigid material and having a flat disk-like or annular surface, and a sintered diamond layer adjacent to and cemented with the cemented carbide body in a layered manner. A flat abrasive body having a disk shape or an annular shape as a whole, and the abrasive body is bonded to one of the circular or annular surfaces of the substrate with a cemented carbide surface as a bonding surface; A pad conditioner in which a linear groove group is formed in the groove group and a plurality of polishing protrusions of uniform height are aligned along the groove group, and the polishing protrusion has four sides in a cross section perpendicular to the axis. The outer peripheral surface at the top of the polishing protrusion has a reinforcing portion that spreads at a tilt angle α of 0 to 30 ° with respect to a reference plane perpendicular to the substrate, and the back surface of each outer side surface Inclination angle β with respect to a reference plane parallel to the substrate is inclined downward at 5 ° to 45 ° The pad conditioner has a flank face and a surface angle (inner angle) γ between the outer side surface and the back surface is smaller than 90 °.

上記のように超高圧高温下で焼結されたＰＣＤやＰｃＢＮ等、超砥粒の焼結体で構成される円形研磨面を持つ本発明の回転研磨工具は、結合材の溶融温度以上で焼結されていることにより、超砥粒の固着強度が大きく、実質上脱落がない、という利点がある。 As described above, the rotary polishing tool of the present invention having a circular polishing surface composed of a sintered body of superabrasive grains, such as PCD and PcBN sintered under an ultrahigh pressure and high temperature, is sintered at a temperature higher than the melting temperature of the binder. By being bonded, there is an advantage that the fixing strength of the superabrasive grains is large and there is substantially no dropout.

本発明者は先に焼結ダイヤモンド層に四角乃至三角錐状研磨突起をもつ研磨工具を開発し、特願2005-243529及び2006-209236として特許出願をした。本発明は、さらにこの研磨突起形状に改良を加え、より好適な状態でコンディショニングを行えるようにしたものである。さらに本発明の研磨工具においては、研磨突起の頂部をより小さく構成することによって、単位面積当たりの尖端点の個数(密度)を増すことができ、研磨点の個数が先の発明に比べて格段に多く、コンディショニングにおいて著しい効率の向上が達成される。 The present inventor has previously developed a polishing tool having a square or triangular pyramid-shaped polishing protrusion on a sintered diamond layer, and filed patent applications as Japanese Patent Application Nos. 2005-243529 and 2006-209236. The present invention further improves the shape of this polishing protrusion so that conditioning can be performed in a more suitable state. Furthermore, in the polishing tool of the present invention, the number of point points (density) per unit area can be increased by configuring the top of the polishing protrusion to be smaller, and the number of polishing points is markedly higher than that of the previous invention. In particular, significant efficiency gains are achieved in conditioning.

一方、シリコン等のウェハを、剛性金属製の台金表面にダイヤモンド等の超砥粒を固定した工具で加工することができれば、コンディショニングのための時間及び経費が節約できる。 On the other hand, if a wafer such as silicon can be processed with a tool in which superabrasive grains such as diamond are fixed on the surface of a base metal made of rigid metal, the time and cost for conditioning can be saved.

本発明の好適な実施形態を、図面を用いて説明する。図１及び図２は、それぞれ円板及び円環状回転工具として構成した本発明のコンディショナーを示す略図であり、各工具１、２の表面、研磨突起(その一つを代表として３、４で示す)は、互いに直交して設けられた二組の直線状の主溝５〜８、９〜１２で限定され、隣接する研磨突起から隔てられる。 Preferred embodiments of the present invention will be described with reference to the drawings. 1 and 2 are schematic views showing the conditioner of the present invention configured as a disc and an annular rotary tool, respectively, and show the surface of each tool 1, 2 and polishing protrusions (one of which is represented by 3, 4). ) Is limited by two sets of linear main grooves 5 to 8 and 9 to 12 provided orthogonal to each other, and is separated from adjacent polishing protrusions.

各研磨突起のより詳細な構成を図３及び図４に示す。図４は、図３のＡ〜Ａにおける立面輪郭を示したものである。各突起は、上記直交する２組の、隣接主溝間の中央にこれらと平行して設けた切り込みによって４個の尖端部分１３〜１６に分割されるが、隣接尖端部分の対向する二つの傾斜背面１７、１８で限定される切込み１９を、本発明においては副溝と称する。副溝は、特に図４における研磨突起の立面輪郭から理解されるように、長さ方向に垂直な断面においてはＶ字型を呈する。直交する他の副溝は紙面に平行に設けられる。背面の傾斜は外周面に比べて緩やかで、これらの各背面と外周面２１〜２４とで構成される４個の錐状部分を尖端部分と呼び、各尖端部分の鋭利な頂点を尖端点と呼ぶ。 A more detailed configuration of each polishing protrusion is shown in FIGS. FIG. 4 shows an elevational contour in AA of FIG. Each protrusion is divided into four pointed portions 13 to 16 by a notch provided in parallel with the two sets of the adjacent main grooves in the two orthogonal directions. The notches 19 defined by the rear surfaces 17 and 18 are referred to as minor grooves in the present invention. The sub-groove exhibits a V shape in a cross section perpendicular to the length direction, as can be understood from the elevational contour of the polishing protrusion in FIG. Other sub-grooves orthogonal to each other are provided in parallel to the paper surface. The inclination of the back surface is gentle compared to the outer peripheral surface, and the four cone-shaped parts composed of each of these back surfaces and the outer peripheral surfaces 21 to 24 are called pointed parts, and the sharp apexes of each pointed part are pointed points. Call.

より広範囲の研磨面の構成を図５に、またそのＡ−Ａにおける断面図を図６に示す。図に見られるとおり、尖端部分同士はより浅い副溝２５、２６で分離され、各研磨突起２７〜３０は、研磨突起の外周面間に限定される主溝３２〜３４によって隣接研磨突起から隔てられている。 FIG. 5 shows a configuration of a wider polishing surface, and FIG. 6 shows a cross-sectional view taken along the line AA. As seen in the figure, the tip portions are separated by shallower sub-grooves 25, 26, and each polishing protrusion 27-30 is separated from the adjacent polishing protrusion by main grooves 32-34 defined between the outer peripheral surfaces of the polishing protrusions. It has been.

本発明において、上記のとおり各研磨突起は正方形乃至類似の四辺形断面を持つ柱状に形成されるが、補強のために研磨突起を裾拡がり、即ち根元を頂部よりも太くすることが好ましい。この場合、図４に示すように、裾拡がりの角度αは、コンディショナーの軸に垂直な基準面に対する(第一) 傾斜角として30°以下が好ましい。 In the present invention, as described above, each polishing protrusion is formed in a columnar shape having a square or similar quadrilateral cross section, but it is preferable to widen the polishing protrusion for reinforcement, that is, to make the base thicker than the top. In this case, as shown in FIG. 4, the skirt expansion angle α is preferably 30 ° or less as the (first) inclination angle with respect to the reference plane perpendicular to the conditioner axis.

一方、研磨突起の前記背面は、前記基準面に対して5°以上45°以下、好ましくは15°以下の、第二傾斜角βで、頂部中央に向かって下方傾斜にて形成される。このようにして構成される頂部の窪みは、研磨工程においては逃げ面として機能する。 On the other hand, the back surface of the polishing protrusion is formed with a second inclination angle β of 5 ° or more and 45 ° or less, preferably 15 ° or less with respect to the reference surface, with a downward inclination toward the top center. The top recess formed in this way functions as a flank in the polishing process.

前記において、研磨突起における一対の外周面と背面とがなす面角γ(＝α＋(90-β))は90°以下とすべきで、特に75°乃至60°が好適である。各傾斜角及び面角の好適な例を次表にまとめて示す。 In the above description, the surface angle γ (= α + (90−β)) formed by the pair of outer peripheral surfaces and the back surface of the polishing protrusion should be 90 ° or less, and particularly preferably 75 ° to 60 °. Suitable examples of each inclination angle and surface angle are summarized in the following table.

本発明の研磨工具において、上記研磨体は、ワイヤカットや型放電加工やレーザーによって円形、又は同心の中心円形孔を有する円環状焼結体層で構成することができる。 In the polishing tool of the present invention, the polishing body can be constituted by an annular sintered body layer having a circular or concentric central circular hole by wire cutting, die discharge machining, or laser.

本発明における研磨突起は、直線状、特に直交する直線群で格子状に設けた主溝に沿って配置形成される。隣接主溝間の間隔乃至ピッチは600〜1200μｍが適当で、この中間に設けられる研磨突起は、頂部の４隅の近くに各尖端点をもつ略正方形断面上に配設し、隣接研磨突起間の間隔は300〜600μｍとするのが適当である。 The polishing protrusions in the present invention are arranged and formed along a main groove provided in a linear shape, in particular, a lattice shape in a group of orthogonal lines. The interval or pitch between adjacent main grooves is suitably 600 to 1200 μm, and the polishing protrusions provided in the middle are arranged on a substantially square cross section having respective apex points near the four corners of the top, and between adjacent polishing protrusions. It is appropriate that the distance of 300 to 600 μm.

尖端点の間隔は研磨面全体において一様に形成するのが簡便である。研磨突起の高さ乃至頂部尖端点の主溝底に対する高さは300μｍ以下が適切であるが、主溝は削り粉の主な排出路として機能するので、特にピッチが比較的小さい場合には、副溝よりも広くとるのが好ましい。 It is easy to form the intervals between the apex points uniformly over the entire polished surface. The height of the polishing protrusion to the height of the apex point of the main groove with respect to the bottom of the main groove is suitably 300 μm or less, but the main groove functions as a main discharge path for the shaving powder, and particularly when the pitch is relatively small, It is preferable to make it wider than the minor groove.

このような研磨突起群及び溝群の形成には、型彫りやワイヤカット等の放電加工やレーザーカット等、各種の公知手法が利用可能である。典型的な手法としてのワイヤカットを用いる場合には、焼結体層表面に沿って一組の平行な直線状溝群及び溝に隣接する研磨突起の各側面を放電加工により焼結ダイヤモンド面に形成した後、中心軸の周囲に90°回転させて次の組の、同様の直線状溝群及び隣接する研磨突起の各側面を切り出して、研磨突起を形成する。 Various known methods such as electric discharge machining such as engraving and wire cutting, and laser cutting can be used to form the polishing protrusion group and the groove group. When wire cutting is used as a typical technique, a set of parallel linear grooves along the surface of the sintered body layer and each side surface of the polishing protrusion adjacent to the grooves are formed into a sintered diamond surface by electric discharge machining. After the formation, it is rotated by 90 ° around the central axis, and the next set of the same linear groove group and each side surface of the adjacent polishing protrusion are cut out to form the polishing protrusion.

尖端点において副溝が主溝と同様に、例えば300μｍ以上の幅を有する場合には、全体を１種類のワイヤで加工することができるが、これ以下の幅の場合には、大小２種類の線径のワイヤを用い、２パス操作等で、例えば200μｍのより大きなワイヤで、より小さな副溝を例えば50μｍのより小径のワイヤで形成すれば、加工工程における精度と効率が同時に達成できるので、効果的である。 If the minor groove has a width of, for example, 300 μm or more at the apex point, the whole can be processed with one type of wire, but if the width is less than this, two types of large and small are available. If a wire with a wire diameter is used and a smaller secondary groove is formed with a smaller wire with a diameter of 50 μm, for example, with a larger wire of 200 μm, for example, in a two-pass operation, the accuracy and efficiency in the machining process can be achieved simultaneously. It is effective.

本発明における研磨体としては、0.1mm以上の研磨突起頂部が焼結ダイヤモンドで構成されている。本発明のパッド・コンディショナーでは、砥粒として働く各研磨突起は頂部を含む高さ60μｍ以上の部分がダイヤモンド焼結体(ＰＣＤ)で構成されている。研磨突起の尖端は焼結ダイヤモンドで構成されるが、突起全体を焼結ダイヤモンドで構成する必要はなく、下層部は超硬合金で構成することが出来る。上記研磨面の主溝の深さは特に主溝の幅(尖端点間隔)の50％以下、特に0.3mm以下とするのが好適である。 As a polishing body in the present invention, a top portion of a polishing protrusion of 0.1 mm or more is made of sintered diamond. In the pad conditioner of the present invention, each polishing projection that functions as an abrasive grain is composed of a diamond sintered body (PCD) at a height of 60 μm or more including the top. The tip of the polishing protrusion is made of sintered diamond, but the entire protrusion need not be made of sintered diamond, and the lower layer portion can be made of cemented carbide. The depth of the main groove on the polished surface is particularly preferably 50% or less, particularly 0.3 mm or less, of the width of the main groove (interval between points).

上記研磨突起において、達成されるパッドの表面仕上がり及び効率は、本質的に研磨尖端点の突き出し高さ、特により浅く形成される副溝底に対する高さにより影響され、これは200μm以下30μm以上とするのが適切である。これよりも浅いと研磨体本体がパッド等のワークと直接接触し、コンディショニングが効果的に行われない。反面200mmよりも大きくなると、研磨単位の強度が不足したり、過剰な超砥粒層の厚さを必要とするという欠点が生じる。高精度を目的とする場合は例えば60μｍ以下の下限値に近い高さとし、作業効率を重要視する場合には160μｍ以上の値とする。 In the polishing protrusion, the surface finish and efficiency of the pad achieved is essentially influenced by the protrusion height of the polishing tip, particularly the height with respect to the sub-groove bottom formed shallower, which is 200 μm or less and 30 μm or more. It is appropriate to do. If it is shallower than this, the polishing body will be in direct contact with a work such as a pad, and conditioning will not be performed effectively. On the other hand, when the thickness is larger than 200 mm, there are disadvantages that the strength of the polishing unit is insufficient and that the thickness of the superabrasive layer is excessive. For the purpose of high accuracy, for example, the height is close to the lower limit of 60 μm or less, and when work efficiency is important, the value is 160 μm or more.

上記研磨突起の研磨性能はまた、研磨突起尖端に含有されるダイヤモンド粒子、即ち研磨体として焼結ダイヤモンド(ＰＣＤ)層を構成するダイヤモンド粒子の粒度に依存する。本発明においては、40-60μｍ(公称粒度)から0-2μｍ以下まで各粒度のＰＣＤ層が好適なダイヤモンド粒子の粒度として利用でき、特に8-16μｍ以下が好ましい。 The polishing performance of the polishing protrusion also depends on the particle size of diamond particles contained in the tip of the polishing protrusion, that is, the diamond particles constituting the sintered diamond (PCD) layer as an abrasive. In the present invention, PCD layers of various particle sizes from 40-60 μm (nominal particle size) to 0-2 μm or less can be used as suitable diamond particle sizes, and 8-16 μm or less is particularly preferable.

本発明の研磨体を構成するダイヤモンド焼結体は、ダイヤモンド粒子を、裏打ち材としての超硬合金及び、必要に応じてコバルト等の結合材金属と共に、ダイヤモンドが熱力学的に安定な超高圧高温条件下に供して得られる。焼結体から本発明の研磨体への加工は精密放電加工、典型的にはワイヤカットによって実現できる。 The diamond sintered body constituting the abrasive body of the present invention comprises diamond particles, a cemented carbide as a backing material, and optionally a binder metal such as cobalt, and diamond is thermodynamically stable at high pressure and high temperature. Obtained by subjecting to conditions. Processing from the sintered body to the polishing body of the present invention can be realized by precision electric discharge machining, typically wire cutting.

図１に概略示した構造のパッドコンディショナーを作成した。公称粒度40-60μmのダイヤモンド粒子から成る厚さ0.5mmのＰＣＤ層が超硬合金(ＷＣ−8％Ｃo)に同時焼結によって一体化された、直径100mmのダイヤモンド焼結体を研磨体素材として用い、直径108mmの、SUS316ステンレス鋼製円形基板に、エポキシ系接着剤で固着した。 A pad conditioner having the structure schematically shown in FIG. 1 was prepared. A diamond sintered body with a diameter of 100 mm in which a 0.5 mm thick PCD layer consisting of diamond particles with a nominal particle size of 40-60 μm is integrated with cemented carbide (WC-8% Co) by simultaneous sintering is used as a polishing body material. Used, it was fixed to a circular substrate made of SUS316 stainless steel having a diameter of 108 mm with an epoxy adhesive.

次いでＰＣＤ層の表面を型放電加工により平坦化した後ワイヤカット放電加工によりＰＣＤ層に切り込み、研磨突起を隣接頂部間隔500μmとして、研磨突起頂部からダイヤモンド焼結体に垂直な面に対して10°のテーパーを付けて280μｍの深さまで直線状に切り込み、主溝を形成した。ワイヤを更に側方へ駆動し、焼結ダイヤモンド層の表面から40°の角度で深さ160μｍの対称的なＶ字型溝を切り込み、副溝を形成した。 Next, the surface of the PCD layer is flattened by die discharge machining, then cut into the PCD layer by wire-cut electric discharge machining, and the polishing protrusions are set at an interval of 500 μm between adjacent apexes, and 10 ° from the top of the polishing protrusions to the surface perpendicular to the diamond sintered body A main groove was formed by cutting straightly to a depth of 280 μm. The wire was driven further to the side, and a symmetrical V-shaped groove having a depth of 160 μm was cut at an angle of 40 ° from the surface of the sintered diamond layer to form a sub-groove.

この操作を研磨素材の前面について繰り返しすことにより、第一組の主及び副溝群を形成した後、上記研磨素材を軸の周りに90°回転させて固定し、前記の操作を繰り返すことによって、直交する二組の主溝群、二組の副溝群並びに、外周側面と内側の隣接する傾斜背面対とで構成され、各面の交点に尖端点を有する研磨突起群を形成し、工具を完成させた。この構成における角度α、β、γはそれぞれ10、40、60°、研磨突起における尖端点間の距離は500μｍとなる。 By repeating this operation for the front surface of the abrasive material, after forming the first set of main and sub groove groups, the abrasive material is rotated by 90 ° around the axis and fixed, and the above operation is repeated. A pair of orthogonal main grooves, two sets of sub-grooves, and an outer peripheral side surface and a pair of inclined back surfaces on the inner side, forming a polishing projection group having a point at the intersection of each surface, and a tool Was completed. In this configuration, the angles α, β, and γ are 10, 40, and 60 °, respectively, and the distance between the tip points of the polishing protrusion is 500 μm.

図２に概略示した構造のパッド・コンティショナーを作成した。厚さ0.6mmの焼結ダイヤモンド層が超硬合金に同時焼結によって一体化されている、直径90mmのＰＣＤブロックを工具素材として用いた。 A pad conditioner having the structure schematically shown in FIG. 2 was prepared. A 90 mm diameter PCD block in which a 0.6 mm thick sintered diamond layer was integrated with cemented carbide by simultaneous sintering was used as the tool material.

上記ＰＣＤブロックにおいて焼結ダイヤモンド層の表面を放電加工(ＥＤＭ)により平坦化し、ワイヤカットにより主溝及び研磨突起を隣接頂部間隔360μｍ、研磨突起頂部における尖端点間隔300μｍで形成した。主溝底に対する尖端点の高さは250μｍであった。 In the PCD block, the surface of the sintered diamond layer was flattened by electric discharge machining (EDM), and the main grooves and the polishing protrusions were formed by wire cutting with an interval between adjacent apexes of 360 μm and a point interval between the apexes of the polishing protrusions of 300 μm. The height of the apex point with respect to the bottom of the main groove was 250 μm.

研磨突起頂部には、同様に主溝に平行なワイヤカット操作により、対向する２対の稜からそれぞれ45°の俯角を付けて切り込むことにより、互いに直交するＶ字型断面の副溝を120μｍの深さまで切り込んだ。この操作により研磨突起頂部の４隅に、二つの外周面と二つの傾斜背面とで構成され、頂部に尖端点を有する尖端を形成した。 Similarly, the top of the polishing protrusion is cut by making a 45 ° depression angle from two opposing ridges by wire cutting operation parallel to the main groove, thereby forming a 120 μm V-shaped cross-sectional sub-groove perpendicular to each other. Cut to depth. As a result of this operation, apexes having two outer peripheral surfaces and two inclined back surfaces and having apex points at the apexes were formed at the four corners of the top of the polishing protrusion.

本発明の円板型回転型研磨工具は、特にＣＭＰパッド・コンディショナーを意図したものであるが、さらに半導体ウェハ等の表面の直接研磨にも適用できる。 The disc-type rotary polishing tool of the present invention is particularly intended for a CMP pad conditioner, but can also be applied to direct polishing of the surface of a semiconductor wafer or the like.

本発明に従って作製されたコンディショナーの一例を示す説明図(平面図)。An explanatory view (plan view) showing an example of a conditioner manufactured according to the present invention. 本発明に従って作製されたコンディショナーの別の例を示す説明図(平面図)。An explanatory view (plan view) showing another example of a conditioner made according to the present invention. 研磨突起の詳細を示す平面図。The top view which shows the detail of a grinding | polishing protrusion. 図３のＡ−Ａにおける研磨突起の断面輪郭及び各角度の位置関係を示す立面図。FIG. 4 is an elevational view showing a cross-sectional contour of the polishing protrusion and a positional relationship of each angle in AA of FIG. 3. コンディショナー表面の部分詳細図(平面図)。Partial detail of the conditioner surface (plan view). 図５のＡ−Ａにおける立面図。FIG. 6 is an elevation view along A-A in FIG. 5.

符号の説明Explanation of symbols

１、２工具
３、４研磨突起
５〜１２主溝
１３〜１６尖端部分
１７、１８尖端部分背面
１９切込み(副溝)
２１〜２４外周面
２５、２６副溝
２７〜３０研磨突起
３２〜３４主溝 1, 2 Tool 3, 4 Polishing protrusion 5-12 Main groove 13-16 Pointed portion 17, 18 Pointed portion rear surface 19 Cutting (sub-groove)
21-24 Outer peripheral surface 25, 26 Sub-groove 27-30 Polishing protrusion 32-34 Main groove

Claims

剛性材からなり平らな円板状乃至円環状表面を有する基板、及び超硬合金体と隣接し層状に焼結一体化された焼結ダイヤモンド層で構成される全体として円板状乃至円環状を呈する平らな研磨体を有し、該研磨体は、超硬合金面を接合面として該基板の一方の円形又は円環状面と接合され、上記焼結ダイヤモンド層に線状溝群が形成され、かつ該溝群に沿って一様な高さの複数個の研磨突起が整列配置されたパッド・コンディショナーであって、該研磨突起は軸に垂直な断面において四辺形の柱状を呈し、研磨突起頂部において外周面は基板に垂直な基準面に対して0乃至30°の傾斜角αで裾広がり状を呈する補強部を有し、また各外方側面の背面は基板に平行な基準面に対する傾斜角βが5°乃至45°で下方に傾斜した逃げ面を有し、かつ外方側面と背面との為す面角(内角)γが90°よりも小さいことを特徴とするパッド・コンディショナー。 A disk-like or annular shape as a whole comprising a substrate made of a rigid material and having a flat disk-like or annular surface, and a sintered diamond layer adjacent to and cemented with the cemented carbide body. A flat abrasive body, and the abrasive body is bonded to one circular or annular surface of the substrate with a cemented carbide surface as a bonding surface, and a linear groove group is formed in the sintered diamond layer, And a pad conditioner in which a plurality of polishing protrusions of uniform height are aligned and arranged along the groove group, the polishing protrusions having a quadrangular columnar shape in a cross section perpendicular to the axis, and the tops of the polishing protrusions The outer peripheral surface has a reinforced portion having a skirt-like shape with an inclination angle α of 0 to 30 ° with respect to a reference plane perpendicular to the substrate, and the back surface of each outer side surface is inclined with respect to the reference surface parallel to the substrate β is 5 ° to 45 ° and has a flank that slopes downward, and the outer side A pad conditioner characterized in that the surface angle (inner angle) γ between the back and the back is less than 90 °.

前記面角γが90°以下である請求項１に記載のパッド・コンディショナー。 The pad conditioner according to claim 1, wherein the surface angle γ is 90 ° or less.

前記面角γが75°以下である請求項１に記載のパッド・コンディショナー。 The pad conditioner according to claim 1, wherein the surface angle γ is 75 ° or less.

前記面角γが60°である請求項１乃至３の各項に記載のパッド・コンディショナー。 The pad conditioner according to any one of claims 1 to 3, wherein the surface angle γ is 60 °.