JP2009074855A - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP2009074855A JP2009074855A JP2007242470A JP2007242470A JP2009074855A JP 2009074855 A JP2009074855 A JP 2009074855A JP 2007242470 A JP2007242470 A JP 2007242470A JP 2007242470 A JP2007242470 A JP 2007242470A JP 2009074855 A JP2009074855 A JP 2009074855A
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- light receiving
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- 238000001514 detection method Methods 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000037072 sun protection Effects 0.000 description 1
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-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/1626—Arrangements with two photodetectors, the signals of which are compared
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/20—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle
- G01J1/28—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source
- G01J1/30—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source using electric radiation detectors
- G01J1/32—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle using variation of intensity or distance of source using electric radiation detectors adapted for automatic variation of the measured or reference value
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】互いに異なる受光波長特性を有して、中間点を介して直列接続され且つ電子機器の筐体の開口に臨んで配置された2つの受光素子を含み、当該受光素子の直列回路の両端を基準電位に維持しつつ当該中間点から抽出される電流を表す信号を検出信号とする光検出装置。
【選択図】図4
Description
図2に示されたグラフから判るように、受光素子15aは、約320nmから約400nmまでの波長範囲において高い受光感度を有している(例えば、かかる高受光感度を有する領域を紫外線領域Aとする)。これに対して、受光素子15bは、約280nmから約400nmまでの波長範囲において高い受光感度を有している(例えば、かかる高受光感度を有する領域を紫外線領域Bとする)。従って、受光素子15a、15bは、異なる受光波長特性を有する。受光素子15aが紫外線領域Aに高受光感度を有する狭域受光素子であり、受光素子15bが紫外線領域Aよりも広い紫外線領域Bに高受光感度を有する広域受光素子である。
12a、12b、12c 開口
15a、15b 受光素子
32 光検出装置
33 電流−電圧変換増幅器
41 オペアンプ
42 フィードバック抵抗
Claims (4)
- 電子機器の筐体に照射される照射光の強さを検出する光検出装置であって、
互いに異なる受光波長特性を有して中間点を介して互いに直列接続され且つ前記筐体の開口に臨んで配置された2つの受光素子と、
前記受光素子の直列接続回路の両端を基準電位に維持する基準電位回路と、
前記中間点から抽出される電流の大きさに応じた光検出信号を生成する信号生成回路と、を含む光検出装置。 - 前記筐体の開口を経た入射光を前記2つの受光素子に中継する光学系を含む請求項1記載の光検出装置。
- 前記受光素子のうち一方の高感度受光波長領域が他方のそれよりも広いことを特徴とする請求項1又は2記載の光検出装置。
- 前記基準電位回路の基準電位は接地電位若しくは定電圧電位であることを特徴とする請求項3記載の光検出装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007242470A JP2009074855A (ja) | 2007-09-19 | 2007-09-19 | 光検出装置 |
KR1020080043242A KR20090030197A (ko) | 2007-09-19 | 2008-05-09 | 광 검출장치 |
CNA2008101269626A CN101393051A (zh) | 2007-09-19 | 2008-06-20 | 光检测装置 |
US12/211,298 US20090146048A1 (en) | 2007-09-19 | 2008-09-16 | Photo detecting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007242470A JP2009074855A (ja) | 2007-09-19 | 2007-09-19 | 光検出装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009074855A true JP2009074855A (ja) | 2009-04-09 |
Family
ID=40493459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007242470A Pending JP2009074855A (ja) | 2007-09-19 | 2007-09-19 | 光検出装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090146048A1 (ja) |
JP (1) | JP2009074855A (ja) |
KR (1) | KR20090030197A (ja) |
CN (1) | CN101393051A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010078423A (ja) * | 2008-09-25 | 2010-04-08 | Toshiba Corp | 固体撮像素子 |
JP2019215316A (ja) * | 2018-06-13 | 2019-12-19 | エー・ウント・エー・エレクトロニック・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング | 電子装置、そのような電子装置を備えた光ガスセンサー及びそのような電子装置を用いて光電流と温度を組み合せて測定する方法 |
WO2020209079A1 (ja) * | 2019-04-09 | 2020-10-15 | ソニーセミコンダクタソリューションズ株式会社 | 測距センサ、信号処理方法、および、測距モジュール |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838811B2 (en) * | 2007-12-03 | 2010-11-23 | Rohm Co., Ltd. | Ambient light sensor |
CN102739304A (zh) * | 2011-04-06 | 2012-10-17 | 北京同方微电子有限公司 | 一种用于芯片安全防护的光检测电路 |
CN102937479A (zh) * | 2012-11-15 | 2013-02-20 | 北京昆腾微电子有限公司 | 光强检测电路和方法 |
TWI484464B (zh) * | 2013-02-22 | 2015-05-11 | Au Optronics Corp | 光感測裝置 |
CN104539857B (zh) * | 2014-12-26 | 2018-02-27 | 电子科技大学 | 光电流读出电路及自适应光强成像阵列电路及其控制方法 |
CN108829171A (zh) * | 2018-07-24 | 2018-11-16 | 烽火通信科技股份有限公司 | 一种消除监控光电二极管暗电流的装置及方法 |
CN113447052A (zh) * | 2021-06-07 | 2021-09-28 | 武汉光迅科技股份有限公司 | 一种光接收组件及光传感设备 |
CN118129918A (zh) * | 2024-01-30 | 2024-06-04 | 北京邮电大学 | 抑制暗电流的分时共享红外读出电路、装置和红外成像仪 |
Citations (9)
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JPS6365325A (ja) * | 1986-09-05 | 1988-03-23 | Sharp Corp | 光量検出回路 |
JPH01292220A (ja) * | 1988-05-19 | 1989-11-24 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JPH0295824U (ja) * | 1989-01-18 | 1990-07-31 | ||
JPH04235424A (ja) * | 1991-01-10 | 1992-08-24 | Sumitomo Electric Ind Ltd | 光による情報伝達のための受光装置 |
JPH04310829A (ja) * | 1991-04-09 | 1992-11-02 | Japan Electron Control Syst Co Ltd | 筒内温度センサ |
JP2006222868A (ja) * | 2005-02-14 | 2006-08-24 | Murata Mfg Co Ltd | 光送受信モジュールおよびそれを備えた光送受信装置 |
JP2006329892A (ja) * | 2005-05-27 | 2006-12-07 | Mitsumi Electric Co Ltd | 受光装置 |
JP2006349625A (ja) * | 2005-06-20 | 2006-12-28 | Mitsubishi Electric Corp | 紫外線量測定装置および携帯電話機および紫外線量測定方法 |
JP2007205902A (ja) * | 2006-02-02 | 2007-08-16 | Epson Imaging Devices Corp | 光検知回路、電気光学装置および電子機器 |
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US4243879A (en) * | 1978-04-24 | 1981-01-06 | Carroll Manufacturing Corporation | Touch panel with ambient light sampling |
CH684971A5 (de) * | 1989-03-16 | 1995-02-15 | Landis & Gyr Tech Innovat | Ultraviolettlicht-Sensor. |
US5117099A (en) * | 1989-09-01 | 1992-05-26 | Schmidt Terrence C | Ambient light rejecting quad photodiode sensor |
US5650608A (en) * | 1991-12-05 | 1997-07-22 | Tv Interactive Data Corporation | Method and apparatus for generating ratiometric control signals |
JP2686036B2 (ja) * | 1993-07-09 | 1997-12-08 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードのバイアス回路 |
CN1091302C (zh) * | 1995-04-05 | 2002-09-18 | 松下电器产业株式会社 | 光检测装置及其制造方法 |
WO1999012469A1 (fr) * | 1997-09-05 | 1999-03-18 | Seiko Epson Corporation | Photodetecteur a reflexion et instrument de mesure de donnees biologiques |
US6756578B1 (en) * | 2002-01-17 | 2004-06-29 | Trimble Navigation Limited | Photocell bias circuit |
JP4353224B2 (ja) * | 2006-09-25 | 2009-10-28 | エプソンイメージングデバイス株式会社 | 光検出装置、電気光学装置、および電子機器 |
-
2007
- 2007-09-19 JP JP2007242470A patent/JP2009074855A/ja active Pending
-
2008
- 2008-05-09 KR KR1020080043242A patent/KR20090030197A/ko not_active Application Discontinuation
- 2008-06-20 CN CNA2008101269626A patent/CN101393051A/zh active Pending
- 2008-09-16 US US12/211,298 patent/US20090146048A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6365325A (ja) * | 1986-09-05 | 1988-03-23 | Sharp Corp | 光量検出回路 |
JPH01292220A (ja) * | 1988-05-19 | 1989-11-24 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JPH0295824U (ja) * | 1989-01-18 | 1990-07-31 | ||
JPH04235424A (ja) * | 1991-01-10 | 1992-08-24 | Sumitomo Electric Ind Ltd | 光による情報伝達のための受光装置 |
JPH04310829A (ja) * | 1991-04-09 | 1992-11-02 | Japan Electron Control Syst Co Ltd | 筒内温度センサ |
JP2006222868A (ja) * | 2005-02-14 | 2006-08-24 | Murata Mfg Co Ltd | 光送受信モジュールおよびそれを備えた光送受信装置 |
JP2006329892A (ja) * | 2005-05-27 | 2006-12-07 | Mitsumi Electric Co Ltd | 受光装置 |
JP2006349625A (ja) * | 2005-06-20 | 2006-12-28 | Mitsubishi Electric Corp | 紫外線量測定装置および携帯電話機および紫外線量測定方法 |
JP2007205902A (ja) * | 2006-02-02 | 2007-08-16 | Epson Imaging Devices Corp | 光検知回路、電気光学装置および電子機器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010078423A (ja) * | 2008-09-25 | 2010-04-08 | Toshiba Corp | 固体撮像素子 |
JP2019215316A (ja) * | 2018-06-13 | 2019-12-19 | エー・ウント・エー・エレクトロニック・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング | 電子装置、そのような電子装置を備えた光ガスセンサー及びそのような電子装置を用いて光電流と温度を組み合せて測定する方法 |
JP7266436B2 (ja) | 2018-06-13 | 2023-04-28 | エー・ウント・エー・エレクトロニック・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング | 電子装置を備えた光ガスセンサー及びそのような電子装置を用いて光電流と温度を組み合せて測定する方法 |
WO2020209079A1 (ja) * | 2019-04-09 | 2020-10-15 | ソニーセミコンダクタソリューションズ株式会社 | 測距センサ、信号処理方法、および、測距モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20090146048A1 (en) | 2009-06-11 |
CN101393051A (zh) | 2009-03-25 |
KR20090030197A (ko) | 2009-03-24 |
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