JP2009071297A - Manufacturing device for substrate for power module and manufacturing method for substrate for power module - Google Patents

Manufacturing device for substrate for power module and manufacturing method for substrate for power module Download PDF

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JP2009071297A
JP2009071297A JP2008211717A JP2008211717A JP2009071297A JP 2009071297 A JP2009071297 A JP 2009071297A JP 2008211717 A JP2008211717 A JP 2008211717A JP 2008211717 A JP2008211717 A JP 2008211717A JP 2009071297 A JP2009071297 A JP 2009071297A
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power module
manufacturing
substrate
metal plate
main body
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JP5181922B2 (en
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Toshiyuki Nagase
敏之 長瀬
Masahiro Yanagida
雅博 柳田
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing device for a substrate for a power module and a manufacturing method for the substrate for the power module that can surely braze a ceramic substrate and metal plates together in a short time. <P>SOLUTION: Disclosed is the manufacturing device for the substrate for the power module that manufactures the substrate for the power module by joining the ceramic substrate and metal plates 11 and 12 together. The manufacturing device for the substrate for the power module includes a device main body 21 which stores a stack 10 of the ceramic substrate 3 and metal plates 11 and 12 having brazing materials 14 and 15 interposed therebetween, a pressing means 23 having a pair of press plates 25A brought into contact with the stack 10 and pressing the stack 10 in the stacking direction thereof, an exhausting means 22 for producing a vacuum atmosphere in the device main body 12, and induction heating means 24A and 24B for heating at least either of the metal plates 11 and 12 and brazing materials 14 and 15, wherein the induction heating means 24A and 24B fuse the brazing materials 14 and 15 to join the ceramic substrate 3 and metal plates 11 and 12 together. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、大電流、高電圧を制御する半導体装置に用いられるパワーモジュール用基板を製造するための製造装置及び製造方法に関するものである。   The present invention relates to a manufacturing apparatus and a manufacturing method for manufacturing a power module substrate used in a semiconductor device that controls a large current and a high voltage.

この種のパワーモジュール用基板として、セラミックス基板の一方の面に回路層を形成する金属板が配設されたものやセラミックス基板の他方の面にも金属板が配設されたものが広く提案されている。
このようなパワーモジュール用基板は、例えば特許文献１及び特許文献２に示されるように、セラミックス基板の一方の面又は両面にろう材を介して金属板を載置して積層体を形成し、この積層体をその積層方向に加圧した状態で真空炉内で加熱してセラミックス基板と金属板とをろう付けすることにより製造される。 As this type of power module substrate, a substrate in which a metal plate for forming a circuit layer is disposed on one surface of a ceramic substrate and a substrate in which a metal plate is disposed on the other surface of a ceramic substrate are widely proposed. ing.
Such a power module substrate is formed, for example, as shown in Patent Document 1 and Patent Document 2, by placing a metal plate on one surface or both surfaces of a ceramic substrate via a brazing material, The laminated body is manufactured by heating in a vacuum furnace in a state of being pressurized in the laminating direction and brazing the ceramic substrate and the metal plate.

従来は、特許文献１，２に示すように、複数の積層体をクッション性のあるシート材を介して積み重ねて、これらを加圧手段によって積層方向に加圧した状態で真空炉内に装入し、真空炉内全体を加熱してろう材を溶融することで、大量のパワーモジュール用基板を製造している。
特開２００４−２８８８２９号公報 特開２００５−７２０３６号公報 Conventionally, as shown in Patent Documents 1 and 2, a plurality of laminated bodies are stacked via cushioning sheet materials, and these are charged into a vacuum furnace in a state where they are pressurized in a laminating direction by a pressurizing means. A large number of power module substrates are manufactured by melting the brazing material by heating the entire vacuum furnace.
JP 2004-288829 A JP 2005-72036 A

ところで、前述のパワーモジュール用基板の製造方法では、大型の真空炉全体を加熱してろう材を溶融しているので、真空炉内の熱が積層体の外周縁部から伝わって外周縁部のろう材から溶解し始め、その後、徐々に熱が内方に向けて伝導していき、ろう材の溶解が進行することになる。このため、ろう材を完全に溶融してろう付けするために、積層体を長時間にわたって真空炉内に滞留させておく必要があった。さらに、ろう材の外周縁部と内方部分とで温度差が生じてしまい、ろう材の溶融状態がばらついて、均一にろう付けできなくなるおそれがあった。   By the way, in the above-described method for manufacturing a power module substrate, since the brazing material is melted by heating the entire large vacuum furnace, the heat in the vacuum furnace is transmitted from the outer peripheral edge of the laminated body. It begins to melt from the brazing material, and then heat is gradually conducted inward, and the melting of the brazing material proceeds. For this reason, in order to melt and braze the brazing material completely, it was necessary to retain the laminate in the vacuum furnace for a long time. Furthermore, a temperature difference is generated between the outer peripheral edge portion and the inner portion of the brazing material, and the molten state of the brazing material varies, and there is a possibility that brazing cannot be performed uniformly.

また、複数の積層板を積み重ねて加圧して大型の真空炉で処理しているので、装置自体が大型化してしまうとともに、小ロット生産に対応することは困難であった。また、真空炉内に積層体を装入して真空炉内全体を加熱しているので、セラミックス基板もろう材と同様に加熱され、熱負荷が大きくなるといった問題があった。
さらに、長時間にわたって高温で維持されるので、セラミックス基板や金属板に含まれる元素が拡散し易くなり、パワーモジュール用基板の厚さ方向にこれらの元素の濃度勾配が形成されてしまうおそれがあった。 In addition, since a plurality of laminated plates are stacked, pressurized and processed in a large vacuum furnace, the apparatus itself becomes large and it is difficult to cope with small lot production. In addition, since the laminated body is inserted into the vacuum furnace and the entire inside of the vacuum furnace is heated, the ceramic substrate is also heated in the same manner as the brazing material, and there is a problem that the thermal load increases.
Furthermore, since it is maintained at a high temperature for a long time, the elements contained in the ceramic substrate and the metal plate are likely to diffuse, and a concentration gradient of these elements may be formed in the thickness direction of the power module substrate. It was.

この発明は、前述した事情に鑑みてなされたものであって、短時間でセラミックス基板と金属板とを確実にろう付け可能なパワーモジュール用基板の製造装置及びパワーモジュール用基板の製造方法を提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and provides a power module substrate manufacturing apparatus and a power module substrate manufacturing method capable of reliably brazing a ceramic substrate and a metal plate in a short time. The purpose is to do.

このような課題を解決して、前記目的を達成するために、本発明のパワーモジュール用基板の製造装置は、セラミックス基板と金属板とを接合してパワーモジュール用基板を製造するパワーモジュール用基板の製造装置であって、前記セラミックス基板と前記金属板とをろう材を介して積層した積層体を収容する装置本体と、前記積層体に密着させられる一対の加圧板を備えて前記積層体をその積層方向に加圧する加圧手段と、前記装置本体の内部を真空雰囲気とする排気手段と、前記金属板及び前記ろう材の少なくとも一方を加熱する誘導加熱手段と、を有し、該誘導加熱手段によって前記ろう材を溶融し、前記セラミックス基板と前記金属板とを接合することを特徴としている。   In order to solve the above problems and achieve the above object, the power module substrate manufacturing apparatus of the present invention is a power module substrate for manufacturing a power module substrate by bonding a ceramic substrate and a metal plate. An apparatus main body that houses a laminate in which the ceramic substrate and the metal plate are laminated via a brazing material, and a pair of pressure plates that are brought into close contact with the laminate. A pressure means for pressurizing in the laminating direction; an exhaust means for making the inside of the apparatus main body a vacuum atmosphere; and an induction heating means for heating at least one of the metal plate and the brazing material. The brazing material is melted by means, and the ceramic substrate and the metal plate are joined.

この構成のパワーモジュール用基板の製造装置によれば、誘導加熱手段によって前記金属板及び前記ろう材の少なくとも一方を局所的に加熱することでろう材を溶融できるので、セラミックス基板への熱負荷が小さくなる。また、加熱する部分が小さいため、均一にろう材を溶融させることができるとともに、加熱及び冷却の時間を短縮できる。また、誘導加熱であるので、誘導加熱手段が積層体から離れた位置にあっても前記金属板及び前記ろう材の少なくとも一方を確実に加熱することができる。
また、積層体が収容される装置本体内部を真空雰囲気とする排気手段を備えているので、真空雰囲気でろう材又は金属板を加熱することでこれらの酸化等を防止することができ、高品質のパワーモジュール用基板を製造することができる。 According to the power module substrate manufacturing apparatus having this configuration, since the brazing material can be melted by locally heating at least one of the metal plate and the brazing material by the induction heating means, the thermal load on the ceramic substrate is reduced. Get smaller. Moreover, since the part to be heated is small, the brazing filler metal can be uniformly melted and the time for heating and cooling can be shortened. In addition, since induction heating is used, at least one of the metal plate and the brazing material can be reliably heated even if the induction heating means is at a position away from the laminate.
Moreover, since the apparatus main body in which the laminated body is accommodated is provided with an exhaust means for making a vacuum atmosphere, it is possible to prevent oxidation and the like by heating the brazing material or the metal plate in a vacuum atmosphere. The power module substrate can be manufactured.

ここで、前記加圧板に、前記誘導加熱手段を埋設してもよい。
この場合、積層体に密着させられる加圧板に誘導加熱手段を埋設することで、この製造装置の小型化を図ることができる。また、積層体の近傍に誘導加熱手段を配置することが可能となり、効率的に金属板及びろう材の少なくとも一方を加熱することができる。 Here, the induction heating means may be embedded in the pressure plate.
In this case, it is possible to reduce the size of the manufacturing apparatus by embedding induction heating means in a pressure plate that is brought into close contact with the laminate. Moreover, it becomes possible to arrange | position an induction heating means in the vicinity of a laminated body, and can heat at least one of a metal plate and a brazing material efficiently.

さらに、前記装置本体を、内部に収容される前記積層体の積層方向に２分割するものとし、この２分割された前記装置本体の内面にそれぞれ前記加圧板を配設してもよい。
この場合、２分割された装置本体の一方に積層体を載置し、その上から装置本体の他方を積み重ねることで、装置本体内部に積層体を収容することができるとともに、装置本体の内面に設けられた加圧板を介して積層体を積層方向に加圧することができる。また、加圧板を装置本体の内面に配設することにより、製造装置の小型化を図ることができる。 Furthermore, the apparatus main body may be divided into two in the stacking direction of the laminated body housed therein, and the pressure plate may be disposed on the inner surface of the two divided apparatus main bodies.
In this case, the stacked body can be accommodated inside the apparatus main body by placing the stacked body on one of the two divided apparatus main bodies and stacking the other of the apparatus main bodies from above, and on the inner surface of the apparatus main body. The laminated body can be pressurized in the laminating direction via the provided pressure plate. Further, the manufacturing apparatus can be downsized by disposing the pressure plate on the inner surface of the apparatus main body.

また、一対の加圧板にそれぞれ誘導加熱手段を設け、一の誘導加熱手段と他の誘導加熱手段を選択的に用いて金属板及びろう材の少なくとも一方を加熱するようにしてもよい。
例えば、セラミックス基板の一方の面にのみ金属板をろう付けする際には、この金属板に密着させられる加圧板側の誘導加熱手段を用いて金属板及びろう材の少なくとも一方を加熱することができる。このように、製造するセラミックス基板に応じてろう付け条件を適宜設定することができ、小ロット生産に適した製造装置を提供することが可能となる。 Further, induction heating means may be provided for each of the pair of pressure plates, and at least one of the metal plate and the brazing material may be heated by selectively using one induction heating means and the other induction heating means.
For example, when brazing a metal plate only to one surface of a ceramic substrate, it is possible to heat at least one of the metal plate and the brazing material using an induction heating means on the pressure plate side that is in close contact with the metal plate. it can. Thus, brazing conditions can be set as appropriate according to the ceramic substrate to be manufactured, and a manufacturing apparatus suitable for small-lot production can be provided.

本発明のパワーモジュール用基板の製造方法は、セラミックス基板と金属板とを接合してパワーモジュール用基板を製造するパワーモジュール用基板の製造方法であって、前記セラミックス基板と前記金属板とをろう材を介して積層して積層体を形成し、前記積層体に密着させられる加圧板を介して前記積層体をその積層方向に加圧するとともに、少なくとも前記積層体の周囲を真空状態とし、誘導加熱手段によって前記金属板及び前記ろう材の少なくとも一方を加熱し、前記セラミックス基板と前記金属板とをろう付けすることを特徴としている。
この構成のパワーモジュール用基板の製造方法によれば、均一にしかも短時間でろう材を溶融させることができ、ろう付け作業を効率的に行うことができる。 The power module substrate manufacturing method of the present invention is a power module substrate manufacturing method for manufacturing a power module substrate by bonding a ceramic substrate and a metal plate, and the ceramic substrate and the metal plate are joined together. A laminate is formed through a material, and a laminate is formed. The laminate is pressurized in a laminating direction through a pressure plate that is in close contact with the laminate, and at least the periphery of the laminate is in a vacuum state, and induction heating is performed. At least one of the metal plate and the brazing material is heated by means to braze the ceramic substrate and the metal plate.
According to the method for manufacturing a power module substrate having this configuration, the brazing material can be melted uniformly and in a short time, and the brazing operation can be performed efficiently.

本発明に係るパワーモジュール用基板の製造装置及びパワーモジュール用基板の製造方法によれば、セラミックス基板と金属板とを短時間で確実にろう付けすることができる。   According to the power module substrate manufacturing apparatus and the power module substrate manufacturing method of the present invention, the ceramic substrate and the metal plate can be brazed reliably in a short time.

以下に、本発明の実施の形態について添付した図面を参照して説明する。まず、パワーモジュール用基板の概略構成について説明する。
パワーモジュール用基板２は、図１に示されるように、セラミックス基板３の一方の面に回路層４となる第１の金属板１１がろう付けされ、他方の面に金属層５となる第２の金属板１２がろう付けされている。 Embodiments of the present invention will be described below with reference to the accompanying drawings. First, a schematic configuration of the power module substrate will be described.
As shown in FIG. 1, the power module substrate 2 has a first metal plate 11 to be a circuit layer 4 brazed to one surface of the ceramic substrate 3 and a second metal layer 5 to the other surface. The metal plate 12 is brazed.

セラミックス基板３は、例えばＡｌＮ、Ａｌ２Ｏ３、Ｓｉ３Ｎ４若しくはＳｉＣ等で形成されている。回路層４及び金属層５はそれぞれ、例えば純Ａｌ若しくはＡｌ合金で形成されている。本実施形態では、回路層４及び金属層５は互いに同形同大とされている。
このような構成とされたパワーモジュール用基板２には、回路層４の表面に半導体チップ６がはんだ接合されるとともに、金属層５の表面に放熱体７（ヒートシンク）が接合され、図１に示すパワーモジュール１が成形される。 The ceramic substrate 3 is made of, for example, AlN, Al 2 O 3 , Si 3 N 4 or SiC. The circuit layer 4 and the metal layer 5 are each formed of pure Al or Al alloy, for example. In the present embodiment, the circuit layer 4 and the metal layer 5 have the same shape and size.
In the power module substrate 2 having such a configuration, a semiconductor chip 6 is soldered to the surface of the circuit layer 4 and a heat radiator 7 (heat sink) is joined to the surface of the metal layer 5. The power module 1 shown is molded.

次に、本実施形態であるパワーモジュール用基板２の製造装置２０について説明する。
この製造装置２０は、セラミックス基板３と第１、第２の金属板１１、１２とがろう材箔１４、１５を介して積層された積層体１０を内部に収容する装置本体２１と、装置本体２１内部を真空雰囲気とする排気手段２２と、積層体１０をその積層方向に加圧する加圧手段２３と、誘導加熱コイル２４Ａ、２４Ｂを備えている。 Next, the manufacturing apparatus 20 for the power module substrate 2 according to the present embodiment will be described.
The manufacturing apparatus 20 includes an apparatus main body 21 that accommodates a laminated body 10 in which a ceramic substrate 3 and first and second metal plates 11 and 12 are laminated via brazing material foils 14 and 15, and an apparatus main body. 21 includes an evacuation unit 22 that creates a vacuum atmosphere inside, a pressurizing unit 23 that pressurizes the stacked body 10 in the stacking direction, and induction heating coils 24A and 24B.

本実施形態では、装置本体２１は、その内部に収容される積層体１０の積層方向に２分割可能な構成とされており、上部本体２１Ａと下部本体２１Ｂとを備えている。上部本体２１Ａ及び下部本体２１Ｂの内面には、それぞれ積層体１０に密着させられる加圧板２５Ａ、２５Ｂが配設されている。なお、本実施形態では、図２に示すように、上部本体２１Ａと加圧板２５Ａ、下部本体２１Ｂと加圧板２５Ｂとがそれぞれ一体に成形されている。
また、この加圧板２５Ａ、２５Ｂの周囲にそれぞれ溝部２６Ａ、２６Ｂが形成され、溝部２６Ａ、２６Ｂの外周側に上部本体２１Ａと下部本体２１Ｂとがシール部材２８を介して互いに当接させられる当接面部２７Ａ、２７Ｂがそれぞれ形成されている。 In the present embodiment, the apparatus main body 21 is configured to be divided into two in the stacking direction of the stacked body 10 accommodated therein, and includes an upper main body 21A and a lower main body 21B. Pressure plates 25A and 25B that are in close contact with the laminate 10 are disposed on the inner surfaces of the upper main body 21A and the lower main body 21B, respectively. In the present embodiment, as shown in FIG. 2, the upper main body 21A and the pressure plate 25A, and the lower main body 21B and the pressure plate 25B are integrally formed.
Further, grooves 26A and 26B are formed around the pressure plates 25A and 25B, respectively, and the upper main body 21A and the lower main body 21B are brought into contact with each other via the seal member 28 on the outer peripheral side of the groove parts 26A and 26B. Surface portions 27A and 27B are respectively formed.

これら上部本体２１Ａと下部本体２１Ｂとを、内部に収容される積層体１０の積層方向に向けて、互いに近接するように押圧する加圧部材２９が設けられている。加圧板２５Ａ、２５Ｂとこの加圧部材２９とが、加圧手段２３を構成している。
さらに、下部本体２１Ｂに設けられた溝部２６Ｂに連通する排気管３０が配設され、この排気管３０には真空ポンプ３１が接続されている。これら排気管３０及び真空ポンプ３１が排気手段２２を構成している。 A pressure member 29 is provided to press the upper main body 21A and the lower main body 21B toward each other in the stacking direction of the stacked body 10 accommodated therein. The pressure plates 25 </ b> A and 25 </ b> B and the pressure member 29 constitute a pressure means 23.
Further, an exhaust pipe 30 communicating with a groove 26B provided in the lower main body 21B is disposed, and a vacuum pump 31 is connected to the exhaust pipe 30. The exhaust pipe 30 and the vacuum pump 31 constitute the exhaust means 22.

そして、上部本体２１Ａ及び下部本体２１Ｂに配設された加圧板２５Ａ、２５Ｂにそれぞれ誘導加熱コイル２４Ａ、２４Ｂが埋設されている。ここで、誘導加熱コイル２４Ａ、２４Ｂが埋設された加圧板２５Ａ、２５Ｂは、第１、第２の金属板１１、１２及びろう材箔１４、１５よりも電気抵抗が極めて高い絶縁体で構成されている。なお、これらの誘導加熱コイル２４Ａ、２４Ｂは、それぞれ独立して通電可能な構成とされている。   And the induction heating coils 24A and 24B are embed | buried under the pressurization plates 25A and 25B arrange | positioned at 21 A of upper main bodies and the lower main body 21B, respectively. Here, the pressure plates 25A and 25B in which the induction heating coils 24A and 24B are embedded are made of an insulator having an electric resistance much higher than that of the first and second metal plates 11 and 12 and the brazing material foils 14 and 15. ing. In addition, these induction heating coils 24A and 24B are configured to be able to energize independently.

以下に、前述した本実施形態であるパワーモジュール用基板２の製造装置２０を用いたパワーモジュール用基板２の製造方法について説明する。
まず、セラミックス基板３の一方の面（図３において上面）にろう材箔１４を介して回路層４を構成する第１の金属板１１を載置するとともに、セラミックス基板３の他方の面（図３において下面）にろう材箔１５を介して金属層５を構成する第２の金属板１２を載置して積層体１０を形成する（積層工程Ｓ１）。
ここで、ろう材箔１４、１５は、厚さ１０〜３０μｍのＡｌ系（例えば、Ａｌ−７ｗｔ％Ｓｉ）のろう材で形成されている。 Below, the manufacturing method of the board | substrate 2 for power modules using the manufacturing apparatus 20 of the board | substrate 2 for power modules which is this embodiment mentioned above is demonstrated.
First, the first metal plate 11 constituting the circuit layer 4 is placed on one surface (the upper surface in FIG. 3) of the ceramic substrate 3 via the brazing material foil 14, and the other surface of the ceramic substrate 3 (FIG. 3, the second metal plate 12 constituting the metal layer 5 is placed on the lower surface) via the brazing material foil 15 to form the laminate 10 (lamination step S1).
Here, the brazing material foils 14 and 15 are formed of an Al-based (for example, Al-7 wt% Si) brazing material having a thickness of 10 to 30 μm.

次に、この積層体１０を下部本体２１Ｂの加圧板２５Ｂと金属層５（第２の金属板１２）の表面とが密着するように載置する。そして、上部本体２１Ａの加圧板２５Ａが回路層４（第１の金属板１１）の表面の上に載置される。ここで、上部本体２１Ａの当接面部２７Ａ及び下部本体２１Ｂの当接面部２７Ｂとの間にシール部材２８が配設される。この状態で、加圧部材２９によって上部本体２１Ａと下部本体２１Ｂとを互いに近接するように加圧する。これにより、装置本体２１の内部に収容された積層体１０は、加圧板２５Ａ、２５Ｂによってその積層方向に加圧される（加圧工程Ｓ２）。   Next, the laminated body 10 is placed so that the pressure plate 25B of the lower main body 21B and the surface of the metal layer 5 (second metal plate 12) are in close contact with each other. Then, the pressure plate 25A of the upper main body 21A is placed on the surface of the circuit layer 4 (first metal plate 11). Here, the seal member 28 is disposed between the contact surface portion 27A of the upper main body 21A and the contact surface portion 27B of the lower main body 21B. In this state, the upper body 21A and the lower body 21B are pressed by the pressing member 29 so as to be close to each other. Thereby, the laminated body 10 accommodated in the inside of the apparatus main body 21 is pressurized by the pressurization plates 25A and 25B in the lamination direction (pressurization process S2).

前述のようにして装置本体２１内部に収容された積層体１０の周囲には、上部本体２１Ａ及び下部本体２１Ｂにそれぞれ設けられた溝部２６Ａ、２６Ｂによって空間Ｓが形成されている。この空間Ｓには、排気管３０を通じて真空ポンプ３１が接続されており、この真空ポンプ３１によって装置本体２１内部が真空状態とされる（排気工程Ｓ３）。なお、本実施形態では、装置本体２１内部は、１．３３×１０−３Ｐａ以下の真空状態とされている。 As described above, a space S is formed around the stacked body 10 accommodated in the apparatus main body 21 by the groove portions 26A and 26B provided in the upper main body 21A and the lower main body 21B, respectively. A vacuum pump 31 is connected to the space S through an exhaust pipe 30, and the inside of the apparatus main body 21 is evacuated by the vacuum pump 31 (exhaust step S3). In the present embodiment, the inside of the apparatus main body 21 is in a vacuum state of 1.33 × 10 −3 Pa or less.

このように積層体１０を加圧するとともに装置本体２１内部を真空状態とした上で、それぞれの加圧板２５Ａ、２５Ｂに埋設された誘導加熱コイル２４Ａ、２４Ｂに通電する。上部本体２１Ａの加圧板２５Ａに埋設された誘導加熱コイル２４Ａに通電することにより、回路層４（第１の金属板１１）又はろう材箔１４に渦電流が発生し、この渦電流によるジュール熱でろう材箔１４を溶融する。一方、下部本体２１Ｂの加圧板２５Ｂに埋設された誘導加熱コイル２４Ｂに通電することにより、金属層５（第２の金属板１２）又はろう材箔１５に渦電流が発生し、この渦電流によるジュール熱でろう材箔１５を溶融する（誘導加熱工程Ｓ４）。   In this manner, the laminate 10 is pressurized and the inside of the apparatus main body 21 is evacuated, and then the induction heating coils 24A and 24B embedded in the pressure plates 25A and 25B are energized. By energizing the induction heating coil 24A embedded in the pressure plate 25A of the upper main body 21A, an eddy current is generated in the circuit layer 4 (first metal plate 11) or the brazing foil 14 and Joule heat is generated by this eddy current. The brazing foil 14 is melted. On the other hand, when the induction heating coil 24B embedded in the pressure plate 25B of the lower main body 21B is energized, an eddy current is generated in the metal layer 5 (second metal plate 12) or the brazing material foil 15, and the eddy current is generated. The brazing foil 15 is melted by Joule heat (induction heating step S4).

そして、この積層体１０を冷却してろう材を凝固させ、回路層４（第１の金属板１１）とセラミックス基板３、金属層５（第２の金属板１２）とセラミックス基板３とをそれぞれろう付けする（冷却工程Ｓ５）。
このようにして、パワーモジュール用基板２が製造される。 Then, the laminate 10 is cooled to solidify the brazing material, and the circuit layer 4 (first metal plate 11) and the ceramic substrate 3, and the metal layer 5 (second metal plate 12) and the ceramic substrate 3 are respectively connected. Brazing (cooling step S5).
In this way, the power module substrate 2 is manufactured.

本実施形態であるパワーモジュール用基板２の製造装置２０及びこれを用いた製造方法によれば、上部本体２１Ａの加圧板２５Ａに埋設された誘導加熱コイル２４Ａに通電することによって、回路層４（第１の金属板１１）及びろう材箔１４に渦電流を発生させて加熱し、ろう材箔１４を溶融することができる。一方、下部本体２１Ｂの加圧板２５Ｂに埋設された誘導加熱コイル２４Ｂに通電することによって、金属層５（第２の金属板１２）及びろう材箔１５に渦電流を発生させて加熱して、ろう材箔１５を溶融することができる。このように、セラミックス基板３を直接加熱することなく、回路層４（第１の金属板１１）、金属層５（第２の金属板１２）をろう付けすることが可能となり、セラミックス基板３への熱負荷を抑えることができる。   According to the manufacturing apparatus 20 for the power module substrate 2 and the manufacturing method using the same according to the present embodiment, the circuit layer 4 (by energizing the induction heating coil 24A embedded in the pressure plate 25A of the upper body 21A. The brazing filler metal foil 14 can be melted by generating and heating eddy currents in the first metal plate 11) and the brazing filler metal foil 14. On the other hand, by energizing the induction heating coil 24B embedded in the pressure plate 25B of the lower main body 21B, an eddy current is generated and heated in the metal layer 5 (second metal plate 12) and the brazing material foil 15, The brazing filler metal foil 15 can be melted. In this manner, the circuit layer 4 (first metal plate 11) and the metal layer 5 (second metal plate 12) can be brazed without directly heating the ceramic substrate 3, and the ceramic substrate 3 can be brazed. The heat load of can be suppressed.

また、回路層４（第１の金属板１１）及びろう材箔１４、金属層５（第２の金属板１２）及びろう材箔１５を局所的に加熱することができるので、均一にろう材箔１４、１５を溶融させることができるとともに、ろう材箔１４，１５を溶融するための加熱時間及び溶融したろう材を凝固させるための冷却時間をそれぞれ短縮することができ、パワーモジュール用基板２を効率良く製造することができる。
さらに、誘導加熱コイル２４Ａ、２４Ｂを備えているので、加圧板２５Ａ、２５Ｂを回路層４（第１の金属板１１）及び金属層５（第２の金属板１２）に密着させて積層体１０を積層方向に加圧しても、回路層４（第１の金属板１１）及びろう材箔１４、金属層５（第２の金属板１２）及びろう材箔１５が誘導加熱コイル２４Ａ、２４Ｂに直接接触させることなく加熱することが可能となり、ろう付けを確実に行うことができる。 Further, since the circuit layer 4 (first metal plate 11) and the brazing material foil 14, the metal layer 5 (second metal plate 12) and the brazing material foil 15 can be locally heated, the brazing material is uniformly distributed. The foils 14 and 15 can be melted, and the heating time for melting the brazing material foils 14 and 15 and the cooling time for solidifying the molten brazing material can be shortened, respectively. Can be manufactured efficiently.
Further, since the induction heating coils 24A and 24B are provided, the pressure plates 25A and 25B are brought into close contact with the circuit layer 4 (first metal plate 11) and the metal layer 5 (second metal plate 12), so that the laminate 10 is provided. Are pressed in the laminating direction, the circuit layer 4 (first metal plate 11) and the brazing material foil 14, the metal layer 5 (second metal plate 12) and the brazing material foil 15 are applied to the induction heating coils 24A and 24B. Heating is possible without direct contact, and brazing can be performed reliably.

また、装置本体２１内部に収容された積層体１０の周囲に形成された空間Ｓに連通する排気管３０とこの排気管３０に接続された真空ポンプ３１とからなる排気手段２２を備えているので、真空雰囲気でろう材箔１４，１５を溶融することが可能となり、高品質のパワーモジュール用基板２を製造することができる。   In addition, since an exhaust unit 22 including an exhaust pipe 30 communicating with a space S formed around the laminate 10 accommodated in the apparatus main body 21 and a vacuum pump 31 connected to the exhaust pipe 30 is provided. The brazing filler metal foils 14 and 15 can be melted in a vacuum atmosphere, and the high-quality power module substrate 2 can be manufactured.

さらに、本実施形態では、装置本体２１が上部本体２１Ａと下部本体２１Ｂとからなり、これら上部本体２１Ａ及び下部本体２１Ｂの内面にそれぞれ加圧板２５Ａ、２５Ｂが配設されているので、下部本体２１Ｂに積層体１０を載置するとともに積層体１０の上に上部本体２１Ａを載置し、加圧部材２９によって上部本体２１Ａと下部本体２１Ｂとを互いに近接させることで、装置本体２１内に積層体１０を収容するとともに加圧板２５Ａ、２５Ｂによって積層体１０をその積層方向に加圧することができる。   Furthermore, in the present embodiment, the apparatus main body 21 includes an upper main body 21A and a lower main body 21B, and pressure plates 25A and 25B are disposed on the inner surfaces of the upper main body 21A and the lower main body 21B, respectively. The upper body 21A is placed on the laminated body 10, and the upper body 21A and the lower main body 21B are brought close to each other by the pressing member 29, whereby the laminated body is placed in the apparatus main body 21. 10 and pressurizing plates 25A and 25B can press the laminate 10 in the stacking direction.

また、本実施形態では、積層体１０の回路層４（第１の金属板１１）、金属層５（第２の金属板１２）に密着させられる加圧板２５Ａ、２５Ｂに誘導加熱コイル２４Ａ、２４Ｂが埋設されているので、積層体１０の近傍に誘導加熱コイル２４Ａ、２４Ｂを配置することができ、効率的に回路層４（第１の金属板１１）、金属層５（第２の金属板１２）及びろう材箔１４、１５を加熱することができる。さらに、この製造装置２０の小型化を図ることができる。   In the present embodiment, the induction heating coils 24A and 24B are applied to the pressure plates 25A and 25B that are brought into close contact with the circuit layer 4 (first metal plate 11) and the metal layer 5 (second metal plate 12) of the laminate 10. Is embedded, the induction heating coils 24A and 24B can be disposed in the vicinity of the laminate 10, and the circuit layer 4 (first metal plate 11) and the metal layer 5 (second metal plate) can be efficiently disposed. 12) and the brazing foils 14, 15 can be heated. Further, the manufacturing apparatus 20 can be reduced in size.

また、上部本体２１Ａの加圧板２５Ａに埋設された誘導加熱コイル２４Ａと下部本体２１Ｂの加圧板２５Ｂに埋設された誘導加熱コイル２４Ｂとが、それぞれ独立に通電可能な構成とされているので、例えば、回路層４（第１の金属板１１）のみをセラミックス基板３にろう付けする場合にも、この製造装置２０を用いることができる。また、局所的に加熱することができるので、セラミックス基板３の一方の面に回路層４（第１の金属板１１）をろう付けした状態で、セラミックス基板３の他方の面に金属層５（第２の金属板１２）をろう付けすることも可能となる。さらに、回路層４（第１の金属板１１）のろう付け条件と金属層５（第２の金属板１２）のろう付け条件をそれぞれ個別に設定することもできる。このように、製造するパワーモジュール用基板２に応じてろう付け条件を適宜設定することができる。   In addition, the induction heating coil 24A embedded in the pressure plate 25A of the upper main body 21A and the induction heating coil 24B embedded in the pressure plate 25B of the lower main body 21B can be independently energized. Even when only the circuit layer 4 (first metal plate 11) is brazed to the ceramic substrate 3, the manufacturing apparatus 20 can be used. Moreover, since it can heat locally, in the state which brazed the circuit layer 4 (1st metal plate 11) to one surface of the ceramic substrate 3, the metal layer 5 (on the other surface of the ceramic substrate 3). It is also possible to braze the second metal plate 12). Furthermore, the brazing conditions for the circuit layer 4 (first metal plate 11) and the brazing conditions for the metal layer 5 (second metal plate 12) can be set individually. Thus, brazing conditions can be set as appropriate according to the power module substrate 2 to be manufactured.

特に、本実施形態では、セラミックス基板３にそれぞれ回路層４（第１の金属板１１）、金属層５（第２の金属板１２）をろう材箔１４、１５を介して積層させた積層体１０を１つのみ装置本体２１内に収容してろう付けしているので、パワーモジュール用基板２の小ロット生産に対応することができる。
また、本実施形態では、加圧板２５Ａ、２５Ｂがそれぞれ上部本体２１Ａ、下部本体２１Ｂに一体に成形されているので、この製造装置２０の一層の小型化を図ることが可能となる。 In particular, in the present embodiment, a laminate in which the circuit layer 4 (first metal plate 11) and the metal layer 5 (second metal plate 12) are laminated on the ceramic substrate 3 via the brazing foils 14 and 15, respectively. Since only one 10 is accommodated in the apparatus main body 21 and brazed, it is possible to cope with small-lot production of the power module substrate 2.
In the present embodiment, the pressure plates 25A and 25B are formed integrally with the upper main body 21A and the lower main body 21B, respectively, so that the manufacturing apparatus 20 can be further miniaturized.

以上、本発明の実施形態について説明したが、本発明はこれに限定されることはなく、その発明の技術的思想を逸脱しない範囲で適宜変更可能である。
例えば、本実施形態では、パワーモジュール用基板として金属層を備えたものとして説明したが、この金属層を設けないものであってもよい。
セラミックス基板、回路層及び金属層、ろう材の材質は、本実施形態に限定されることはなく、他の材質で構成されていてもよい。 As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.
For example, in the present embodiment, the power module substrate has been described as including a metal layer, but the metal layer may not be provided.
The materials of the ceramic substrate, the circuit layer, the metal layer, and the brazing material are not limited to the present embodiment, and may be composed of other materials.

また、誘導加熱コイルを上部本体及び下部本体に埋設したものとして説明したが、これに限定されることはなく、上部本体及び下部本体の外側に誘導加熱コイルを別途設けてもよい。
さらに、装置本体を上部本体と下部本体に２分割され、その内面に加圧板が一体に成形された構成として説明したが、これに限定されることはなく、装置本体の内部に加圧手段が別途設けられていてもよい。
また、一対の誘導加熱コイルを備えたものとして説明したが、どちらか一方の誘導加熱コイルを備えたものであってもよい。 Further, although the induction heating coil has been described as being embedded in the upper main body and the lower main body, the present invention is not limited to this, and the induction heating coil may be separately provided outside the upper main body and the lower main body.
Furthermore, the apparatus main body has been described as being divided into an upper main body and a lower main body, and a pressure plate is integrally formed on the inner surface of the apparatus main body. However, the present invention is not limited to this, and a pressurizing means is provided inside the apparatus main body. It may be provided separately.
Moreover, although demonstrated as a thing provided with a pair of induction heating coil, you may be provided with either one induction heating coil.

本発明の実施形態であるパワーモジュール用基板の製造装置で製造されたパワーモジュール用基板を適用したパワーモジュールを示す説明図である。It is explanatory drawing which shows the power module to which the board | substrate for power modules manufactured with the manufacturing apparatus of the board | substrate for power modules which is embodiment of this invention is applied. 本発明の実施形態であるパワーモジュール用基板の製造装置を示す説明図である。It is explanatory drawing which shows the manufacturing apparatus of the board | substrate for power modules which is embodiment of this invention. 図２に示すパワーモジュール用基板の製造装置に収容される積層体の説明図である。It is explanatory drawing of the laminated body accommodated in the manufacturing apparatus of the board | substrate for power modules shown in FIG. 本発明の実施形態であるパワーモジュール用基板の製造方法を示すフロー図である。It is a flowchart which shows the manufacturing method of the board | substrate for power modules which is embodiment of this invention.

符号の説明Explanation of symbols

１ パワーモジュール
２ パワーモジュール用基板
３ 回路層
４ 金属層
１０ 積層体
１１ 第１の金属板
１２ 第２の金属板
１４、１５ ろう材箔（ろう材）
２０ 製造装置（パワーモジュール用基板の製造装置）
２１ 装置本体
２２ 排気手段
２３ 加圧手段
２４Ａ、２４Ｂ 誘導加熱コイル
２５Ａ、２５Ｂ 加圧板 DESCRIPTION OF SYMBOLS 1 Power module 2 Power module substrate 3 Circuit layer 4 Metal layer 10 Laminate body 11 First metal plate 12 Second metal plates 14 and 15 Brazing material foil (brazing material)
20 Manufacturing Equipment (Power Module Board Manufacturing Equipment)
21 Apparatus body 22 Exhaust means 23 Pressurizing means 24A, 24B Induction heating coils 25A, 25B Pressurizing plate

Claims (5)

セラミックス基板と金属板とを接合してパワーモジュール用基板を製造するパワーモジュール用基板の製造装置であって、
前記セラミックス基板と前記金属板とをろう材を介して積層した積層体を収容する装置本体と、
前記積層体に密着させられる一対の加圧板を備えて前記積層体をその積層方向に加圧する加圧手段と、
前記装置本体の内部を真空雰囲気とする排気手段と、
前記金属板及び前記ろう材の少なくとも一方を加熱する誘導加熱手段と、を有し、
該誘導加熱手段によって前記ろう材を溶融し、前記セラミックス基板と前記金属板とを接合することを特徴とするパワーモジュール用基板の製造装置。 A power module substrate manufacturing apparatus for manufacturing a power module substrate by bonding a ceramic substrate and a metal plate,
An apparatus main body for accommodating a laminate in which the ceramic substrate and the metal plate are laminated via a brazing material;
A pressure unit that includes a pair of pressure plates that are in close contact with the laminate, and pressurizes the laminate in the stacking direction;
An evacuation means for making the inside of the apparatus main body a vacuum atmosphere;
Induction heating means for heating at least one of the metal plate and the brazing material,
An apparatus for manufacturing a power module substrate, wherein the brazing material is melted by the induction heating means, and the ceramic substrate and the metal plate are joined. 請求項１に記載のパワーモジュール用基板の製造装置であって、
前記加圧板に、前記誘導加熱手段が埋設されていることを特徴とするパワーモジュール用基板の製造装置。 It is a manufacturing apparatus of the board for power modules according to claim 1,
The apparatus for manufacturing a power module substrate, wherein the induction heating means is embedded in the pressure plate. 請求項１または請求項２に記載のパワーモジュール用基板の製造装置であって、
前記装置本体は、内部に収容される前記積層体の積層方向に２分割され、この２分割された前記装置本体の内面にそれぞれ前記加圧板が配設されていることを特徴とするパワーモジュール用基板の製造装置。 An apparatus for manufacturing a power module substrate according to claim 1 or 2,
The apparatus main body is divided into two in the stacking direction of the laminate accommodated therein, and the pressure plate is disposed on the inner surface of the two divided apparatus main bodies. Board manufacturing equipment. 請求項１から請求項３のいずれか１項に記載のパワーモジュール用基板の製造装置であって、
前記一対の加圧板にそれぞれ誘導加熱手段が設けられており、一の誘導加熱手段と他の誘導加熱手段を選択的に用いて前記金属板及び前記ろう材の少なくとも一方を加熱することを特徴とするパワーモジュール用基板の製造装置。 A power module substrate manufacturing apparatus according to any one of claims 1 to 3,
An induction heating means is provided for each of the pair of pressure plates, and at least one of the metal plate and the brazing material is selectively heated using one induction heating means and another induction heating means. Manufacturing equipment for power module substrates. セラミックス基板と金属板とを接合してパワーモジュール用基板を製造するパワーモジュール用基板の製造方法であって、
前記セラミックス基板と前記金属板とをろう材を介して積層して積層体を形成し、
前記積層体に密着させられる加圧板を介して前記積層体をその積層方向に加圧するとともに、
少なくとも前記積層体の周囲を真空状態とし、
誘導加熱手段によって前記金属板及び前記ろう材の少なくとも一方を加熱し、前記セラミックス基板と前記金属板とをろう付けすることを特徴とするパワーモジュール用基板の製造方法。 A power module substrate manufacturing method for manufacturing a power module substrate by bonding a ceramic substrate and a metal plate,
Laminating the ceramic substrate and the metal plate via a brazing material to form a laminate,
While pressurizing the laminate in the laminating direction via a pressure plate that is in close contact with the laminate,
At least the periphery of the laminate is in a vacuum state,
A method for manufacturing a power module substrate, wherein at least one of the metal plate and the brazing material is heated by induction heating means to braze the ceramic substrate and the metal plate.
JP2008211717A 2007-08-22 2008-08-20 Power module substrate manufacturing apparatus and power module substrate manufacturing method Expired - Fee Related JP5181922B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029320A (en) * 2009-07-23 2011-02-10 Mitsubishi Materials Corp Method and device of manufacturing substrate for power module, and manufacture intermediate
JP2011029319A (en) * 2009-07-23 2011-02-10 Mitsubishi Materials Corp Method of manufacturing substrate for power module, and manufacture intermediate

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JPS61121489A (en) * 1984-11-19 1986-06-09 株式会社東芝 Cu wiring sheet for manufacture of substrate
JPS6487328A (en) * 1987-09-30 1989-03-31 Seidensha Electronics Fusion-welding process of synthetic resin plate and its device
JPH0570253A (en) * 1991-02-26 1993-03-23 Daihen Corp Joining method for ceramics with each other and thermal joining insert material
JP2001062809A (en) * 1999-08-24 2001-03-13 Sekisui Chem Co Ltd Method and apparatus for manufacture of building panel

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JPS61121489A (en) * 1984-11-19 1986-06-09 株式会社東芝 Cu wiring sheet for manufacture of substrate
JPS6487328A (en) * 1987-09-30 1989-03-31 Seidensha Electronics Fusion-welding process of synthetic resin plate and its device
JPH0570253A (en) * 1991-02-26 1993-03-23 Daihen Corp Joining method for ceramics with each other and thermal joining insert material
JP2001062809A (en) * 1999-08-24 2001-03-13 Sekisui Chem Co Ltd Method and apparatus for manufacture of building panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029320A (en) * 2009-07-23 2011-02-10 Mitsubishi Materials Corp Method and device of manufacturing substrate for power module, and manufacture intermediate
JP2011029319A (en) * 2009-07-23 2011-02-10 Mitsubishi Materials Corp Method of manufacturing substrate for power module, and manufacture intermediate

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