JP2009065170A - 希ガスクリーニングステップの追加によって改善したプラズマチャンバ壁のクリーニング - Google Patents
希ガスクリーニングステップの追加によって改善したプラズマチャンバ壁のクリーニング Download PDFInfo
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- JP2009065170A JP2009065170A JP2008229936A JP2008229936A JP2009065170A JP 2009065170 A JP2009065170 A JP 2009065170A JP 2008229936 A JP2008229936 A JP 2008229936A JP 2008229936 A JP2008229936 A JP 2008229936A JP 2009065170 A JP2009065170 A JP 2009065170A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 67
- 229910052756 noble gas Inorganic materials 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract 2
- 238000001636 atomic emission spectroscopy Methods 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 238000006303 photolysis reaction Methods 0.000 claims description 5
- 230000015843 photosynthesis, light reaction Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000001499 laser induced fluorescence spectroscopy Methods 0.000 claims description 2
- 238000000322 laser mass spectrometry Methods 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000001782 photodegradation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 238000011109 contamination Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】水分子を破壊して電子励起した酸素原子を形成できる高エネルギーのEUVフォトン(E>20eV)を放射する希ガスプラズマ(例えば、He)が、吸着された水を除去するために用いられる。該方法は、材料に吸収された水分子の光分解を引き起こすのに充分なエネルギーを有する、極端紫外及び/又は真空紫外のフォトンを放射して、酸素、水素及び/又は水酸基のラジカルを放出させることが可能である希ガスプラズマに対して該表面を露出することと、反応チャンバからラジカルを除去することとを含む。
【選択図】図2
Description
・反応チャンバから放出されたラジカルを除去する。
・放出された酸素、水素及び/又は水酸基のラジカル量を検出する。
・放出された酸素、水素及び/又は水酸基のラジカル量から、プラズマチャンバの水の汚染を定量化する。
・酸素、水素及び/又は水酸基のラジカル量を反応チャンバから除去して、表面での再堆積を回避する。
Claims (7)
- プラズマチャンバ内の材料表面から水の残留物を除去するための方法であって、
・材料に吸収された水分子の光分解を引き起こすのに充分なエネルギーを有する、極端紫外及び/又は真空紫外のフォトンを放射して、酸素、水素及び/又は水酸基のラジカルを放出させることが可能である希ガスプラズマに対して、該表面を露出すること、
・再堆積を回避するために、反応チャンバからラジカルを除去すること、を含む方法。 - 希ガスプラズマに表面を露出するステップは、0.39Pa〜10.66Paの範囲の希ガス圧力、100〜1500sccmの範囲の希ガス流量、および400W〜2000Wの範囲のプラズマパワーを用いて実施する請求項1記載の方法。
- 希ガスプラズマに表面を露出する際、光学発光分光法、レーザ誘起蛍光法または質量分析法によって、放出された酸素、水素及び/又は水酸基のラジカル量を検出することをさらに含む請求項1記載の方法。
- 放出された酸素、水素及び/又は水酸基のラジカル量を検出することは、光学発光分光法を用いて波長777nmで酸素ラジカルを検出することによって行うようにした請求項2記載の方法。
- 希ガスプラズマに表面を露出するステップの前に、O2/SF6プラズマまたはO2/Cl2プラズマを用いたウエハ無し自動クリーニング手順を実施するステップをさらに含む請求項1〜3の何れかに記載の方法。
- 該方法は、HeまたはArのプラズマを用いて、反応性イオンエッチングチャンバの内壁から水の残留物を除去するために用いられる請求項1〜5の何れかに記載の方法。
- 該方法は、その場(in-situ)で実施するようにした請求項1〜6の何れかに記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97084407P | 2007-09-07 | 2007-09-07 | |
US60/970,844 | 2007-09-07 | ||
US5087808P | 2008-05-06 | 2008-05-06 | |
US61/050,878 | 2008-05-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009065170A true JP2009065170A (ja) | 2009-03-26 |
JP5101442B2 JP5101442B2 (ja) | 2012-12-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008229936A Expired - Fee Related JP5101442B2 (ja) | 2007-09-07 | 2008-09-08 | 希ガスクリーニングステップの追加によって改善したプラズマチャンバ壁のクリーニング |
Country Status (3)
Country | Link |
---|---|
US (1) | US7964039B2 (ja) |
EP (1) | EP2034046B1 (ja) |
JP (1) | JP5101442B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110055402A (ko) | 2009-11-18 | 2011-05-25 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체 |
JP2011108603A (ja) * | 2009-11-20 | 2011-06-02 | Ulvac Japan Ltd | 薄膜リチウム二次電池及び薄膜リチウム二次電池の形成方法 |
CN111994868A (zh) * | 2020-08-12 | 2020-11-27 | 天津大学 | 极紫外光与等离子体复合原子尺度加工方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5448619B2 (ja) * | 2009-07-21 | 2014-03-19 | 東京応化工業株式会社 | サポートプレートの洗浄方法 |
US9564286B2 (en) | 2014-08-14 | 2017-02-07 | Samsung Electronics Co., Ltd. | Method of forming thin film of semiconductor device |
US20170287791A1 (en) | 2016-03-31 | 2017-10-05 | Tokyo Electron Limited | Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy |
WO2018094219A1 (en) | 2016-11-18 | 2018-05-24 | Tokyo Electron Limited | Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process |
US10446453B2 (en) | 2017-03-17 | 2019-10-15 | Tokyo Electron Limited | Surface modification control for etch metric enhancement |
CN108847390B (zh) * | 2018-06-13 | 2021-04-02 | 上海华力微电子有限公司 | 一种等离子体刻蚀的方法 |
CN111477537B (zh) * | 2020-04-07 | 2023-05-19 | 北京晶亦精微科技股份有限公司 | 一种晶圆清洗方法及晶圆清洗设备 |
US11791141B2 (en) * | 2020-07-29 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for residual gas analysis |
Citations (11)
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JPH1098019A (ja) * | 1996-09-24 | 1998-04-14 | Kawasaki Steel Corp | 表面清浄化方法 |
JPH11286023A (ja) * | 1998-04-03 | 1999-10-19 | Ulvac Corp | プラズマクリーニング方法及びプラズマクリーニング装置 |
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-
2008
- 2008-09-05 US US12/205,596 patent/US7964039B2/en not_active Expired - Fee Related
- 2008-09-08 JP JP2008229936A patent/JP5101442B2/ja not_active Expired - Fee Related
- 2008-09-08 EP EP08163870.2A patent/EP2034046B1/en not_active Not-in-force
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1098019A (ja) * | 1996-09-24 | 1998-04-14 | Kawasaki Steel Corp | 表面清浄化方法 |
JPH11336662A (ja) * | 1997-07-16 | 1999-12-07 | Mitsubishi Heavy Ind Ltd | 真空容器および真空容器からの排気方法 |
JPH11286023A (ja) * | 1998-04-03 | 1999-10-19 | Ulvac Corp | プラズマクリーニング方法及びプラズマクリーニング装置 |
JP2001351867A (ja) * | 2000-06-07 | 2001-12-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体製造装置 |
JP2002228356A (ja) * | 2000-09-08 | 2002-08-14 | Boc Group Inc:The | 圧縮ガスシリンダのプラズマ乾燥及び不動態化 |
US20020074014A1 (en) * | 2000-10-16 | 2002-06-20 | Mao-Chang Yeh | Method for cleaning a metal etching chamber |
JP2006508535A (ja) * | 2002-11-26 | 2006-03-09 | アクセリス テクノロジーズ インコーポレーテッド | 低k誘電体フィルムのための乾燥処理 |
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JP2007101024A (ja) * | 2005-10-03 | 2007-04-19 | Seiko Epson Corp | 被乾燥体の乾燥方法、乾燥機、及びデバイスの製造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110055402A (ko) | 2009-11-18 | 2011-05-25 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 그 클리닝 방법 및 프로그램을 기록한 기록매체 |
JP2011108603A (ja) * | 2009-11-20 | 2011-06-02 | Ulvac Japan Ltd | 薄膜リチウム二次電池及び薄膜リチウム二次電池の形成方法 |
CN111994868A (zh) * | 2020-08-12 | 2020-11-27 | 天津大学 | 极紫外光与等离子体复合原子尺度加工方法 |
CN111994868B (zh) * | 2020-08-12 | 2022-05-17 | 天津大学 | 极紫外光与等离子体复合原子尺度加工方法 |
Also Published As
Publication number | Publication date |
---|---|
US7964039B2 (en) | 2011-06-21 |
EP2034046A2 (en) | 2009-03-11 |
EP2034046B1 (en) | 2014-02-12 |
US20090065025A1 (en) | 2009-03-12 |
JP5101442B2 (ja) | 2012-12-19 |
EP2034046A3 (en) | 2012-03-28 |
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