JP2009065015A5 - - Google Patents

Claims (4)

ボンド基板の下に第１の容器を配置した後、
前記ボンド基板を劈開させることで前記ボンド基板から形成される複数の第１の半導体膜を、前記第１の容器に載置し、
前記第１の容器の上に第２の容器を配置した後、前記第１の容器及び前記第２の容器を反転させることで、前記複数の第１の半導体膜を前記第２の容器に載置し、
前記複数の第１の半導体膜を前記第２の容器から拾い上げて、前記複数の第１の半導体膜どうしが離隔するように、なおかつ前記劈開により露出した面がベース基板側を向くように、前記複数の第１の半導体膜を前記ベース基板に貼り、
前記複数の第１の半導体膜をエッチングすることで、複数の第２の半導体膜を形成することを特徴とする半導体装置の作製方法。 After placing the first container under the bond substrate,
A plurality of first semiconductor films formed from the bond substrate by cleaving the bond substrate are placed on the first container,
After disposing the second container on the first container, the first container and the second container are inverted, so that the plurality of first semiconductor films are mounted on the second container. Place
The plurality of first semiconductor films are picked up from the second container so that the plurality of first semiconductor films are separated from each other, and the surface exposed by the cleavage is directed to the base substrate side. bonding the plurality of first semiconductor layer on the base substrate,
A method for manufacturing a semiconductor device, wherein the plurality of second semiconductor films are formed by etching the plurality of first semiconductor films. 第１の結晶面方位を有する第１のボンド基板の下に第１の容器を配置した後、
前記第１のボンド基板を劈開させることで前記第１のボンド基板から形成される複数の第１の半導体膜を、前記第１の容器に載置し、
前記第１の容器の上に第２の容器を配置した後、前記第１の容器及び前記第２の容器を反転させることで、前記複数の第１の半導体膜を前記第２の容器に載置し、
第２の結晶面方位を有する第２のボンド基板の下に第３の容器を配置した後、
前記第２のボンド基板を劈開させることで前記第２のボンド基板から形成される複数の第２の半導体膜を、前記第３の容器に載置し、
前記第３の容器の上に第４の容器を配置した後、前記第３の容器及び前記第４の容器を反転させることで、前記複数の第２の半導体膜を前記第４の容器に載置し、
前記複数の第１の半導体膜を前記第２の容器から拾い上げて、前記複数の第１の半導体膜どうしが離隔するように、なおかつ前記劈開により露出した面がベース基板側を向くように、前記複数の第１の半導体膜を前記ベース基板に貼り、
前記複数の第２の半導体膜を前記第４の容器から拾い上げて、前記複数の第２の半導体膜どうしが離隔するように、なおかつ前記複数の第１の半導体膜と前記複数の第２の半導体膜とが離隔するように、さらに前記劈開により露出した面が前記ベース基板側を向くように、前記複数の第２の半導体膜を前記ベース基板に貼り、
前記複数の第１の半導体膜及び前記複数の第２の半導体膜をエッチングすることで、複数の第３の半導体膜及び複数の第４の半導体膜を形成することを特徴とする半導体装置の作製方法。 After disposing the first container under the first bond substrate having the first crystal plane orientation,
A plurality of first semiconductor films formed from the first bond substrate by cleaving the first bond substrate are placed on the first container,
After disposing the second container on the first container, the first container and the second container are inverted, so that the plurality of first semiconductor films are mounted on the second container. Place
After placing the third container under the second bond substrate having the second crystal plane orientation,
A plurality of second semiconductor films formed from the second bond substrate by cleaving the second bond substrate are placed on the third container,
After disposing the fourth container on the third container, the third container and the fourth container are inverted, so that the plurality of second semiconductor films are mounted on the fourth container. Place
The plurality of first semiconductor films are picked up from the second container so that the plurality of first semiconductor films are separated from each other, and the surface exposed by the cleavage is directed to the base substrate side. A plurality of first semiconductor films are attached to the base substrate,
The plurality of second semiconductor films are picked up from the fourth container so that the plurality of second semiconductor films are separated from each other, and the plurality of first semiconductor films and the plurality of second semiconductors are separated from each other. so that the film is separated, so that more surface exposed by the cleavage faces the base substrate side, attached to said plurality of second semiconductor film on the base substrate,
A plurality of third semiconductor films and a plurality of fourth semiconductor films are formed by etching the plurality of first semiconductor films and the plurality of second semiconductor films. Method. 請求項２において、前記第１の結晶面方位は｛１００｝であり、前記第２の結晶面方位は｛１１０｝面であり前記第３の半導体膜からｎチャネル型の素子が形成され、前記第４の半導体膜からｐチャネル型の素子が形成されることを特徴とする半導体装置の作製方法。3. The device according to claim 2, wherein the first crystal plane orientation is {100}, the second crystal plane orientation is {110} plane, and an n-channel element is formed from the third semiconductor film, A method for manufacturing a semiconductor device, wherein a p-channel element is formed from a fourth semiconductor film. 請求項２または３において、前記第１のボンド基板及び前記第２のボンド基板にＨ _３ ^＋ イオンを有するソースガスをイオンドーピングして劈開面を形成することを特徴とする半導体装置の作製方法。 4. The method for manufacturing a semiconductor device according to claim 2, wherein the first bond substrate and the second bond substrate are ion-doped with a source gas including H ₃ ⁺ ions to form a cleavage plane .