JP2009055043A - 非化学量論的正方晶系アルカリ土類シリケート蛍光体を用いた発光装置 - Google Patents
非化学量論的正方晶系アルカリ土類シリケート蛍光体を用いた発光装置 Download PDFInfo
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims abstract description 44
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000003513 alkali Substances 0.000 title description 2
- 239000000126 substance Substances 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 80
- 239000010949 copper Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052693 Europium Inorganic materials 0.000 claims description 19
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 18
- 238000000465 moulding Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000012190 activator Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000009877 rendering Methods 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000009467 reduction Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract 1
- 230000002040 relaxant effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- -1 disilicates Chemical class 0.000 description 9
- 229910052605 nesosilicate Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 150000004760 silicates Chemical class 0.000 description 8
- 238000005090 crystal field Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 239000011575 calcium Substances 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004762 orthosilicates Chemical class 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000003746 solid phase reaction Methods 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 125000005587 carbonate group Chemical group 0.000 description 3
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 101001034830 Mus musculus Interferon-induced transmembrane protein 5 Proteins 0.000 description 1
- YJALXFITEHMESG-UHFFFAOYSA-N OB(O)O.OB(O)O.OB(O)O.OB(O)O.P.P.P.P Chemical compound OB(O)O.OB(O)O.OB(O)O.OB(O)O.P.P.P.P YJALXFITEHMESG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
【解決手段】本発明の発光装置は、発光ダイオードと、発光ダイオードの周囲に配置され、発光ダイオードから放出された光の少なくとも一部を吸収し、吸収した光とは異なる波長の光を放出する非化学量論的発光物質とを備え、非化学量論的発光物質は、正方晶系結晶構造を有し、結晶格子内に、化学量論的結晶構造のシリケート蛍光体に比べて、より多量のシリコンを有するシリケート蛍光体である。
【選択図】 図1
Description
(化学式1)
(BauSrvCawCux)3−y(Zn,Mg,Mn)zSi1+bO5+2b:Eua
ここで、u+v+w+x=1、y=z+a、z≦2、0<x≦1、0<a≦0.5、及び0<b<0.5である。また、銅が基本的にマトリクスの必須部分である正方晶系の非化学量論的シリケートが提供され得る。
図1は、本発明の一実施例による発光装置100を説明するための断面図である。図1は、少なくとも一つの発光ダイオードと発光物質とが組み合わせられたチップ型パッケージを示す。
以下、本発明の実施例に用いられる発光物質3について説明する。
(化学式1)
(BauSrvCawCux)3−y(Zn,Mg,Mn)zSi1+bO5+2b:Eua
ここで、u+v+w+x=1、y=z+a、z≦2、0<x≦1、0<a≦0.5、及び0<b<0.5である。
本発明の発光装置に用いられる発光物質の一実施例である下記の化学式2で表される発光物質の製造方法について説明する。
(化学式2)
Cu0.05Sr2.91Si1.05O5.1:Eu0.04
本発明の発光装置に用いられる発光物質の一実施例である下記の化学式3で表される発光物質の製造方法について説明する。
(化学式3)
Cu0.02Sr2.54Ba0.4Si1.03O5.06:Eu0.04
本発明の発光装置に用いられる発光物質の一実施例である下記の化学式4で表される発光物質の製造方法について説明する。
(化学式4)
Cu0.03Sr2.92Ca0.01Si1.03O5.06:Eu0.04
2 導電性ワイヤ
3 発光物質
5 電極パターン
6 発光ダイオード
9 伝導性接着剤
21 リフレクター
31、32 リード電極
33 コップ部
34 硬化性樹脂成形部
41 ヒートシンク
43 ハウジング
44 リード端子
51、52 ヒートシンク
53 ハウジング
54 リード端子
Claims (19)
- 発光ダイオードと、
前記発光ダイオードの周囲に配置され、前記発光ダイオードから放出された光の少なくとも一部を吸収し、吸収した光とは異なる波長の光を放出する非化学量論的発光物質とを備え、
前記非化学量論的発光物質は、正方晶系結晶構造を有し、結晶格子内に、化学量論的結晶構造のシリケート蛍光体に比べて、より多量のシリコンを有するシリケート蛍光体であることを特徴とする発光装置。 - 前記発光物質が、そのマトリクス内に2価の銅を含有し、活性剤としてユウロピウムを含有することを特徴とする請求項1に記載の発光装置。
- 前記発光物質が、化学式(BauSrvCawCux)3−y(Zn、Mg、Mn)zSi1+bO5+2b:Euaで表されるシリケートを含み、u+v+w+x=1、y=z+a、z≦2、0<x≦1、0<a≦0.5及び0<b<0.5であることを特徴とする請求項1に記載の発光装置。
- 前記発光物質が、波長250nm以上500nm以下の範囲の光により励起されることを特徴とする請求項1乃至3のいずれかに記載の発光装置。
- 前記発光物質が、前記発光ダイオードから放出した光の波長よりもより長波長の光を放出することを特徴とする請求項1乃至3のいずれかに記載の発光装置。
- 前記発光物質が、500nm以上630nm以下に発光ピーク波長を有する光を放出することを特徴とする請求項5に記載の発光装置。
- 前記発光ダイオードから放出された光と、前記発光物質から放出された光との混合により、白色光または所望の色相の光が生成されることを特徴とする請求項1乃至3のいずれかに記載の発光装置。
- 前記発光ダイオードは、青色光を放出する発光ダイオードであり、
前記発光装置が、前記発光ダイオードと前記発光物質とにより、Ra=80〜95である演色指数(CRI)を有する白色光を生成することを特徴とする請求項1乃至3のいずれかに記載の発光装置。 - 前記発光物質が、前記発光ダイオードの側面、上面、及び下面の少なくとも一面に配置されることを特徴とする請求項1乃至3のいずれかに記載の発光装置。
- 前記発光物質が、接着剤または成形剤に混合されることを特徴とする請求項9に記載の発光装置。
- 前記発光ダイオード及び前記発光物質が、一つのパッケージ内に配置されていることを特徴とする請求項1乃至3のいずれかに記載の発光装置。
- 前記パッケージ内に配置された他の発光ダイオードをさらに含み、前記他の発光ダイオードは、前記発光物質の発光ピーク波長よりもより長波長の光を放出することを特徴とする請求項11に記載の発光装置。
- 前記パッケージが、基板を含み、前記発光ダイオードが、基板上に実装されたことを特徴とする請求項11に記載の発光装置。
- 前記基板が、印刷回路基板またはリードフレームを含むことを特徴とする請求項13に記載の発光装置。
- 前記パッケージが、リフレクターをさらに含み、前記発光ダイオードが、前記リフレクター内に実装されることを特徴とする請求項13に記載の発光装置。
- 前記基板上において、前記発光ダイオードを封止する成形部をさらに含むことを特徴とする請求項13に記載の発光装置。
- 前記発光物質が、前記成形部内に分布されていることを特徴とする請求項16に記載の発光装置。
- 前記パッケージが、ヒートシンクを含み、前記発光ダイオードが、前記ヒートシンク上に実装されることを特徴とする請求項11に記載の発光装置。
- 前記発光ダイオードが、複数個の発光セルを有する交流駆動型の発光ダイオードであることを特徴とする請求項1乃至3のいずれかに記載の発光装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070086483 | 2007-08-28 | ||
KR10-2007-0086483 | 2007-08-28 | ||
KR10-2008-0075181 | 2008-07-31 | ||
KR1020080075181A KR101055769B1 (ko) | 2007-08-28 | 2008-07-31 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
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Also Published As
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JP5236397B2 (ja) | 2013-07-17 |
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