JP2009043993A - Magnetoresistance effect device, magnetic storage unit, magnetic memory unit - Google Patents

Magnetoresistance effect device, magnetic storage unit, magnetic memory unit Download PDF

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JP2009043993A
JP2009043993A JP2007208231A JP2007208231A JP2009043993A JP 2009043993 A JP2009043993 A JP 2009043993A JP 2007208231 A JP2007208231 A JP 2007208231A JP 2007208231 A JP2007208231 A JP 2007208231A JP 2009043993 A JP2009043993 A JP 2009043993A
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magnetic layer
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Arata Jogo
新 城後
Yutaka Shimizu
豊 清水
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Fujitsu Ltd
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<P>PROBLEM TO BE SOLVED: To provide a high-output and high-sensitivity magnetoresistance effect device and, a magnetic head, a magnetic storage unit, and a magnetic memory unit that use the magnetoresistance effect device. <P>SOLUTION: This magnetoresistance effect device comprises a fixed magnetic layer, a free magnetic layer, and a nonmagnetic layer sandwiched between the free magnetic layer and the fixed magnetic layer. At least one of the free magnetic layer and the fixed magnetic layer contains Co and/or Fe as a component, and is composed of a CoFeMg alloy film that further contains Mg. The foregoing CoFeMg alloy film has a composition with a composition range of (Co<SB>x</SB>Fe<SB>100-x</SB>)Mgy (where 0≤x≤100, 0<y<30 at%). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、磁気記憶装置において情報を再生するために使われる磁気抵抗効果素子、磁気ヘッド、磁気記憶装置、および磁気メモリ装置に関し、特に、磁気抵抗効果素子を構成する積層膜の積層方向にセンス電流を流すＣＰＰ（Ｃｕｒｒｅｎｔ−Ｐｅｒｐｅｎｄｉｃｕｌａｒ−ｔｏ−Ｐｌａｎｅ）型の構造を有する、いわゆるＣＰＰ型磁気抵抗効果素子に関する。 The present invention relates to a magnetoresistive effect element, a magnetic head, a magnetic memory device, and a magnetic memory device used for reproducing information in a magnetic memory device, and in particular, senses in a stacking direction of a laminated film constituting the magnetoresistive effect element. The present invention relates to a so-called CPP type magnetoresistive effect element having a CPP (Current-Perpendicular-to-Plane) type structure through which a current flows.

近年、磁気記憶装置の磁気ヘッドには、磁気記録媒体に記録された情報を再生するための再生用素子として磁気抵抗効果素子が用いられている。磁気抵抗効果素子は、磁気記録媒体から漏洩する信号磁界の向きの変化を電気抵抗の変化に変換する磁気抵抗効果を利用して磁気記録媒体に記録された情報を再生する。磁気記憶装置の高記録密度化に伴い、スピンバルブ膜を備えたものが主流となっている。   In recent years, magnetoresistive elements have been used in magnetic heads of magnetic storage devices as reproducing elements for reproducing information recorded on magnetic recording media. The magnetoresistive effect element reproduces information recorded on the magnetic recording medium using a magnetoresistive effect that converts a change in the direction of the signal magnetic field leaking from the magnetic recording medium into a change in electrical resistance. With the increase in recording density of magnetic storage devices, those having a spin valve film have become mainstream.

スピンバルブ膜は磁化が所定の方向に固定された固定磁化層と、非磁性層と、磁気記録媒体からの漏洩磁界の方向や強度に応じて磁化の方向が変わる自由磁化層が積層して構成されている。スピンバルブ膜は、固定磁化層の磁化と自由磁化層の磁化とがなす角に応じて電気抵抗値が変化する。電気抵抗値の変化を、スピンバルブ膜に一定値のセンス電流を流して電圧変化として検出することで、磁気抵抗効果素子が磁気記録媒体に記録されたビットを再生する。   A spin valve film is composed of a fixed magnetic layer whose magnetization is fixed in a predetermined direction, a nonmagnetic layer, and a free magnetic layer whose magnetization direction changes depending on the direction and strength of the leakage magnetic field from the magnetic recording medium. Has been. The electric resistance value of the spin valve film changes according to the angle formed by the magnetization of the fixed magnetization layer and the magnetization of the free magnetization layer. A change in electrical resistance value is detected as a voltage change by passing a constant sense current through the spin valve film, so that the magnetoresistive element reproduces a bit recorded on the magnetic recording medium.

現在、磁気抵抗効果素子は、スピンバルブ膜の積層方向、すなわち、固定磁化層、非磁性層、自由磁化層が積層された方向にセンス電流を流すＣＰＰ（Ｃｕｒｒｅｎｔ−Ｐｅｒｐｅｎｄｉｃｕｌａｒ−ｔｏ−Ｐｌａｎｅ）型の構造が用いられている。ＣＰＰ型のスピンバルブ膜は、コア幅（磁気記録媒体のトラック幅に対応するスピンバルブ膜の幅）が縮小されても出力がほとんど変化しないという特長を有するため、高記録密度化に適している。   At present, the magnetoresistive effect element is a CPP (Current-Perpendicular-to-Plane) type in which a sense current flows in the direction in which the spin valve film is laminated, that is, the direction in which the fixed magnetic layer, the nonmagnetic layer, and the free magnetic layer are laminated. Structure is used. The CPP type spin valve film has a feature that the output hardly changes even when the core width (the width of the spin valve film corresponding to the track width of the magnetic recording medium) is reduced. Therefore, the CPP type spin valve film is suitable for increasing the recording density. .

ＣＰＰ型のスピンバルブ膜の出力は、スピンバルブ膜に外部磁界を一方向からその逆の方向に磁界を掃引して印加した際の単位面積の磁気抵抗変化量で決まってくる。単位面積の磁気抵抗変化量は、スピンバルブ膜の磁気抵抗変化量とスピンバルブ膜の膜面の面積を乗じたものである。単位面積の磁気抵抗変化量を増加させるためには、自由磁化層や固定磁化層にスピン依存バルク散乱係数と比抵抗との積が大きな材料を用いる必要がある。スピン依存バルク散乱とは、伝導電子が持つスピンの向きに依存して自由磁化層や固定磁化層の層内で伝導電子が散乱する度合いが異なる現象であり、スピン依存バルク散乱係数が大きいほど、磁気抵抗変化量が大きくなる。また磁気抵抗変化量の他に、自由層が媒体からの信号磁界に感度良く回転するために保磁力（以下Ｈｃｆで表す）の値を低くする必要がある。   The output of the CPP type spin valve film is determined by the amount of change in magnetoresistance of a unit area when an external magnetic field is applied to the spin valve film by sweeping the magnetic field from one direction to the opposite direction. The amount of change in magnetoresistance per unit area is the product of the amount of change in magnetoresistance of the spin valve film and the area of the film surface of the spin valve film. In order to increase the amount of change in magnetoresistance per unit area, it is necessary to use a material having a large product of the spin-dependent bulk scattering coefficient and the specific resistance for the free magnetic layer and the fixed magnetic layer. Spin-dependent bulk scattering is a phenomenon in which the degree to which conduction electrons scatter within the free magnetic layer and the fixed magnetic layer depends on the spin direction of the conduction electrons, and the larger the spin-dependent bulk scattering coefficient, The amount of change in magnetoresistance increases. In addition to the amount of change in magnetoresistance, the coercive force (hereinafter referred to as Hcf) must be lowered in order for the free layer to rotate with high sensitivity to the signal magnetic field from the medium.

しかしながら、自由磁化層や固定磁化層にＣｏＦｅ合金やＮｉＦｅ合金のような一般的な磁性材料（例えば特開２００２−９２８２９を参照）を使用した場合、将来の高記録密度に向けて素子サイズが小さくなると、磁気抵抗変化量が不足してしまうと考えられる。   However, when a general magnetic material such as a CoFe alloy or NiFe alloy is used for the free magnetic layer or the fixed magnetic layer (see, for example, Japanese Patent Laid-Open No. 2002-92829), the element size is reduced toward a future high recording density. Then, it is considered that the amount of change in magnetoresistance is insufficient.

そこで、本発明は上記問題点に鑑みてなされたもので、高出力で高感度な磁気抵抗効果素子、これを用いた磁気ヘッド、磁気記憶装置、および磁気メモリ装置を提供することである。   Accordingly, the present invention has been made in view of the above problems, and provides a high-output and high-sensitivity magnetoresistive effect element, a magnetic head using the same, a magnetic storage device, and a magnetic memory device.

一観点によれば本発明は、固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを備えたＣＰＰ型磁気抵抗効果素子であって、前記自由磁化層と前記固定磁化層の少なくとも一方は、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含むＣｏＦｅＭｇ合金膜で構成され、当該ＣｏＦｅＭｇ合金膜は、（ＣｏｘＦｅ100-ｘ）Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成範囲の組成を有する磁気抵抗効果素子を提供する。ここでＣｏ，ＦｅおよびＭｇの各含有量は原子％で表している。このようなＣｏＦｅＭｇ合金膜の比抵抗はＣｏＦｅ合金膜の比抵抗の３倍以上あるため、上記ＣｏＦｅＭｇ合金膜を自由磁化層や固定磁化層に用いることで、スピン依存バルク散乱係数と比抵抗との積に依存する磁気抵抗変化量を、従来のＣｏＦｅ膜に比べて極めて大きくすることができ、その結果、磁気抵抗効果素子の出力を大幅に増加させることが可能となる。本発明によれば、磁気抵抗効果素子は、自由磁化層に上記（ＣｏｘＦｅ（１００−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）組成のＣｏＦｅＭｇ合金膜を用いることで、単位面積の磁気抵抗変化量ΔＲＡが増大し、磁気抵抗効果素子の出力が増大する。一方、このように本発明では前記ＣｏＦｅＭｇ合金膜中のＭｇ組成を増やすことで比抵抗値を上げることが可能ではあるが、Ｍｇ組成が３０原子%を超えると磁気モーメントが急減するため、ＭＲ比は低下してしまう。このため、前記ＣｏＦｅＭｇ合金膜において、Ｍｇ組成は、３０ａｔ％（原子％）を超えないのが好ましい。 According to one aspect, the present invention is a CPP magnetoresistive element including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic layer inserted between the fixed magnetic layer and the free magnetic layer, At least one of the free magnetic layer and the fixed magnetic layer is composed of a CoFeMg alloy film including Co and / or Fe as a constituent component and further including Mg, and the CoFeMg alloy film is (Co x Fe 100-x ) Mg. Provided is a magnetoresistive element having a composition in the composition range of y (where 0 ≦ x ≦ 100, 0 <y <30 at%). Here, the contents of Co, Fe and Mg are expressed in atomic%. Since the specific resistance of such a CoFeMg alloy film is more than three times the specific resistance of the CoFe alloy film, by using the CoFeMg alloy film as a free magnetic layer or a fixed magnetic layer, the spin-dependent bulk scattering coefficient and the specific resistance can be reduced. The amount of change in magnetoresistance depending on the product can be made extremely large as compared with the conventional CoFe film, and as a result, the output of the magnetoresistive element can be greatly increased. According to the present invention, a magnetoresistive effect element includes a CoFeMg alloy film having a composition of (Co x Fe (100−x) ) M y (where 0 ≦ x ≦ 100, 0 <y <30 at%) in a free magnetic layer. Is used, the magnetoresistive change ΔRA per unit area is increased, and the output of the magnetoresistive element is increased. On the other hand, in the present invention, it is possible to increase the specific resistance value by increasing the Mg composition in the CoFeMg alloy film as described above. However, when the Mg composition exceeds 30 atomic%, the magnetic moment rapidly decreases, so the MR ratio Will fall. For this reason, in the CoFeMg alloy film, the Mg composition preferably does not exceed 30 at% (atomic%).

また本発明は他の観点において、上記いずれかの磁気抵抗効果素子を備える磁気ヘッドを提供する。本発明によれば、磁気抵抗効果素子が高出力であるので、磁気ヘッドは、より高記録密度の磁気記録に対応することが可能となる。   In another aspect, the present invention provides a magnetic head including any one of the above magnetoresistive elements. According to the present invention, since the magnetoresistive element has a high output, the magnetic head can cope with magnetic recording with a higher recording density.

また本発明はその他の観点によれば、上記いずれかの磁気抵抗効果素子を有する磁気ヘッドと、磁気記録媒体とを備える磁気記憶装置を提供する。本発明によれば、磁気抵抗効果素子が高出力であるので、磁気記憶装置の高記録密度化が可能となる。   According to another aspect, the present invention provides a magnetic storage device including a magnetic head having any one of the magnetoresistive elements and a magnetic recording medium. According to the present invention, since the magnetoresistive element has a high output, it is possible to increase the recording density of the magnetic storage device.

本発明はその他の観点において、固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを有するＣＰＰ型の磁気抵抗効果膜で構成される記憶素子と、ビット線とワード線に電流を流して電流磁界によって磁場印加することにより、又は磁気抵抗効果膜にスピン偏極電流を流して前記自由磁化層の磁化を所定の方向に配列させる書き込み手段と、前記磁気抵抗効果膜にセンス電流を供給して抵抗値を検出する読み出し手段と、を備え、前記自由磁化層と固定磁化層の少なくとも一方がＣｏ及び／又はＦｅを構成成分として含みＭｇをさらに含み（ＣｏｘＦｅ（１００−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有するＣｏＦｅＭｇ合金膜よりなることを特徴とする磁気メモリ装置を提供する。本発明によれば、自由磁化層に前記ＣｏＦｅMg合金膜を用いることで、磁気抵抗効果膜の単位面積あたりの磁気抵抗変化量ΔＲＡが増大し、情報の読出しの際に、保持された「０」および「１」に対応する磁気抵抗値の差が増大するため、正確な読出しが可能となる。 In another aspect, the present invention provides a memory composed of a CPP type magnetoresistive film having a fixed magnetic layer, a free magnetic layer, and a nonmagnetic layer inserted between the fixed magnetic layer and the free magnetic layer. Writing means for arranging the magnetization of the free magnetic layer in a predetermined direction by passing a current through the element, the bit line and the word line and applying a magnetic field by a current magnetic field, or by passing a spin-polarized current through the magnetoresistive film And reading means for detecting a resistance value by supplying a sense current to the magnetoresistive film, wherein at least one of the free magnetic layer and the fixed magnetic layer contains Co and / or Fe as a constituent component, and Mg. further comprising (Co x Fe (100-x )) Mg y ( where 0 ≦ x ≦ 100,0 <y < 30at%) magnetic memory instrumentation characterized by comprising from CoFeMg alloy film having a composition of To provide. According to the present invention, by using the CoFeMg alloy film as the free magnetic layer, the magnetoresistance change amount ΔRA per unit area of the magnetoresistive effect film is increased, and “0” retained when reading information is obtained. And the difference between the magnetoresistance values corresponding to “1” increases, so that accurate reading can be performed.

本発明によれば、高出力でかつ磁界を検知する感度が良好な磁気抵抗効果素子、これを用いた磁気ヘッド、磁気記憶装置、および磁気メモリ装置が提供される。   According to the present invention, a magnetoresistive effect element having high output and good sensitivity for detecting a magnetic field, a magnetic head using the same, a magnetic storage device, and a magnetic memory device are provided.

以下図面を参照しつつ実施の形態を説明する。なお、説明の便宜のため、特に断らない限り、「単位面積の磁気抵抗変化量ΔＲＡ」を「磁気抵抗変化量ΔＲＡ」あるいは単に「ΔＲＡ」と略称する。
（第１の実施の形態）
本発明の第１の実施の形態に係る磁気抵抗効果素子と、誘導型記録素子を備えた複合型の磁気ヘッドについて説明する。 Embodiments will be described below with reference to the drawings. For convenience of explanation, unless otherwise specified, “magnetic resistance change amount ΔRA of unit area” is abbreviated as “magnetic resistance change amount ΔRA” or simply “ΔRA”.
(First embodiment)
A composite magnetic head including a magnetoresistive effect element according to a first embodiment of the present invention and an inductive recording element will be described.

図１は、複合型の磁気ヘッドの媒体対向面の要部を示す図である。ただし図１中、矢印Ｘの方向は、磁気抵抗効果素子に対向する磁気記録媒体（不図示）の移動方向を示す。   FIG. 1 is a diagram showing the main part of the medium facing surface of a composite magnetic head. However, in FIG. 1, the direction of the arrow X indicates the moving direction of a magnetic recording medium (not shown) facing the magnetoresistive element.

図１を参照するに、複合型磁気ヘッド１０は、大略して、ヘッドスライダの基体となるＡｌ2Ｏ3−ＴｉＣ等の平坦なセラミック基板１１の上に形成された磁気抵抗効果素子２０と、その上に形成された誘導型記録素子１３から構成される。 Referring to FIG. 1, a composite magnetic head 10 is roughly composed of a magnetoresistive effect element 20 formed on a flat ceramic substrate 11 such as Al 2 O 3 —TiC serving as a base of a head slider, The inductive recording element 13 is formed thereon.

誘導型記録素子１３は、媒体対向面に磁気記録媒体のトラック幅に相当する幅を有する上部磁極１４と、非磁性材料からなる記録ギャップ層１５を挟んで上部磁極１４に対向する下部磁極１６と、上部磁極１４と下部磁極１６とを磁気的に接続するヨーク（図示されず）と、ヨークを巻回し、記録電流により記録磁界をする誘起するコイル（図示されず）等からなる。上部磁極１４、下部磁極１６、およびヨークは軟磁性材料より構成される。この軟磁性材料としては、記録磁界を確保するために飽和磁束密度の大なる材料、例えば、Ｎｉ８０Ｆｅ２０、ＣｏＺｒＮｂ、ＦｅＮ、ＦｅＳｉＮ、ＦｅＣｏ、ＣｏＮｉＦｅ等の組成を有する合金などの材料が挙げられる。なお、誘導型記録素子１３はこれに限定されるものではなく、公知の構造の誘導型記録素子を用いることができる。 The inductive recording element 13 includes an upper magnetic pole 14 having a width corresponding to the track width of the magnetic recording medium on the medium facing surface, and a lower magnetic pole 16 facing the upper magnetic pole 14 with a recording gap layer 15 made of a nonmagnetic material interposed therebetween. A yoke (not shown) that magnetically connects the upper magnetic pole 14 and the lower magnetic pole 16, a coil (not shown) that winds the yoke and induces a recording magnetic field by a recording current, and the like. The upper magnetic pole 14, the lower magnetic pole 16, and the yoke are made of a soft magnetic material. Examples of the soft magnetic material include a material having a high saturation magnetic flux density to ensure a recording magnetic field, for example, a material such as an alloy having a composition such as Ni 80 Fe 20 , CoZrNb, FeN, FeSiN, FeCo, or CoNiFe. . The inductive recording element 13 is not limited to this, and an inductive recording element having a known structure can be used.

磁気抵抗効果素子２０は、セラミック基板１１の表面に形成されたアルミナ膜１２上に、下部電極２１、磁気抵抗効果膜３０（以下、「ＧＭＲ膜３０」と称する。）、アルミナ膜２５、上部電極２２が積層された構成を有する。前記ＧＭＲ膜３０は、下部電極２１および上部電極２２とそれぞれ電気的に接続されている。   The magnetoresistive effect element 20 includes a lower electrode 21, a magnetoresistive effect film 30 (hereinafter referred to as “GMR film 30”), an alumina film 25, an upper electrode on an alumina film 12 formed on the surface of the ceramic substrate 11. 22 has a laminated structure. The GMR film 30 is electrically connected to the lower electrode 21 and the upper electrode 22, respectively.

前記ＧＭＲ膜３０の両側には、絶縁膜２３を介して磁区制御膜２４が設けられている。ここで前記磁区制御膜２４は、例えば、Ｃｒ膜と強磁性のＣｏＣｒＰｔ膜との積層体からなる。磁区制御膜２４は、ＧＭＲ膜３０を構成する自由磁化層（図２に示す。）の単磁区化を図り、バルクハウゼンノイズの発生を防止する。一方、前記下部電極２１および上部電極２２はセンス電流Ｉｓの流路としての機能に加え、磁気シールドとしての機能も兼ねる。そのため、前記下部電極２１および上部電極２２は、軟磁性合金、例えば組成がＮｉＦｅやＣｏＦｅ等の合金から構成される。さらに前記下部電極２１とＧＭＲ膜３０との界面に導電膜、例えば、Ｃｕ膜、Ｔａ膜、Ｔｉ膜等を設けてもよい。また前記磁気抵抗効果素子２０および誘導型記録素子１３は、腐食等を防止するためアルミナ膜や水素化カーボン膜等により覆われる。   Magnetic domain control films 24 are provided on both sides of the GMR film 30 with an insulating film 23 interposed therebetween. Here, the magnetic domain control film 24 is composed of, for example, a laminate of a Cr film and a ferromagnetic CoCrPt film. The magnetic domain control film 24 makes the free magnetic layer (shown in FIG. 2) constituting the GMR film 30 a single magnetic domain and prevents the occurrence of Barkhausen noise. On the other hand, the lower electrode 21 and the upper electrode 22 have a function as a magnetic shield in addition to a function as a flow path of the sense current Is. Therefore, the lower electrode 21 and the upper electrode 22 are made of a soft magnetic alloy, for example, an alloy such as NiFe or CoFe. Further, a conductive film, such as a Cu film, a Ta film, or a Ti film, may be provided at the interface between the lower electrode 21 and the GMR film 30. The magnetoresistive effect element 20 and the inductive recording element 13 are covered with an alumina film, a hydrogenated carbon film, or the like in order to prevent corrosion or the like.

ところで前記センス電流Ｉｓは、例えば上部電極２２から、ＧＭＲ膜３０をその膜面に略垂直に流れ下部電極２１に達する。その際、前記ＧＭＲ膜３０は、磁気記録媒体からの漏洩する信号磁界の強度および方向に対応して電気抵抗値、いわゆる磁気抵抗値を変化させる。そこで前記磁気抵抗効果素子２０は、前記ＧＭＲ膜３０の磁気抵抗値の変化を、所定の電流量のセンス電流Ｉｓを流し、生じた電圧変化の形で検出する。このように、前記磁気抵抗効果素子２０は、磁気記録媒体に記録された情報を再生することができる。なお、前記センス電流Ｉｓの流れる方向は図１に示す方向に限定されず、逆向きでもよい。また、磁気記録媒体の移動方向も逆向きでもよい。   By the way, the sense current Is flows, for example, from the upper electrode 22 through the GMR film 30 substantially perpendicular to the film surface and reaches the lower electrode 21. At that time, the GMR film 30 changes the electric resistance value, so-called magnetoresistance value, corresponding to the intensity and direction of the signal magnetic field leaking from the magnetic recording medium. Therefore, the magnetoresistive effect element 20 detects a change in the magnetoresistance value of the GMR film 30 in the form of a voltage change caused by passing a sense current Is of a predetermined current amount. Thus, the magnetoresistive effect element 20 can reproduce the information recorded on the magnetic recording medium. The direction in which the sense current Is flows is not limited to the direction shown in FIG. Further, the moving direction of the magnetic recording medium may be reversed.

図２は、第１の実施の形態に係る磁気抵抗効果素子を構成する第１例のＧＭＲ膜３０の断面図を示す。   FIG. 2 is a cross-sectional view of a first example GMR film 30 constituting the magnetoresistive effect element according to the first embodiment.

図２を参照するに、前記第１例のＧＭＲ膜３０は、下地層３１、反強磁性層３２、固定磁化積層体３３、非磁性金属層３７、自由磁化層３８、保護層３９が順次積層された構成を有する、いわゆるシングルスピンバルブ構造を有する。   Referring to FIG. 2, the GMR film 30 of the first example has a base layer 31, an antiferromagnetic layer 32, a fixed magnetization stack 33, a nonmagnetic metal layer 37, a free magnetization layer 38, and a protective layer 39 stacked in order. It has what is called a single spin valve structure.

前記下地層３１は、図１に示す下部電極２１の表面にスパッタ法等により形成され、例えば、ＮｉＣｒ合金膜や、Ｔａ膜（例えば膜厚５ｎｍ）とＮｉＦｅ合金膜（例えば膜厚５ｎｍ）との積層体等から構成される。このＮｉＦｅ合金膜は、Ｆｅの含有量が１７原子％〜２５原子％の範囲内であることが好ましい。このような組成のＮｉＦｅ合金膜を用いることにより、ＮｉＦｅ膜の結晶成長方向である（１１１）結晶面およびこれに結晶学的に等価な結晶面の表面に、反強磁性層３２がエピタキシャル成長する。これにより、反強磁性層３２の結晶性を向上させることができる。   The underlayer 31 is formed on the surface of the lower electrode 21 shown in FIG. 1 by sputtering or the like. For example, a NiCr alloy film, a Ta film (for example, a film thickness of 5 nm) and a NiFe alloy film (for example, a film thickness of 5 nm) It is composed of a laminate or the like. This NiFe alloy film preferably has a Fe content in the range of 17 atomic% to 25 atomic%. By using the NiFe alloy film having such a composition, the antiferromagnetic layer 32 is epitaxially grown on the surface of the (111) crystal plane which is the crystal growth direction of the NiFe film and the crystallographically equivalent crystal plane. Thereby, the crystallinity of the antiferromagnetic layer 32 can be improved.

反強磁性層３２は、例えば膜厚４ｎｍ〜３０ｎｍ（好ましくは４ｎｍ〜１０ｎｍ）のＭｎ−ＴＭ合金（ＴＭは、Ｐｔ、Ｐｄ、Ｎｉ、ＩｒおよびＲｈのうち少なくとも１種を含む）から構成される。Ｍｎ−ＴＭ合金としては、例えば組成がＰｔＭｎ、ＰｄＭｎ、ＮｉＭｎ、ＩｒＭｎ、ＰｔＰｄＭｎの合金が挙げられる。反強磁性層３２は、固定磁化積層体３３の第１固定磁化層３４に交換相互作用を及ぼして第１固定磁化層３４の磁化を所定の向きに固定する。固定磁化積層体３３は、反強磁性層３２側から第１固定磁化層３４、非磁性結合層３５、第２固定磁化層３６が順に積層されてなり、いわゆる積層フェリ構造を有する。固定磁化積層体３３は、第１固定磁化層３４の磁化と第２固定磁化層３６の磁化とが反強磁性的に交換結合し、磁化の向きが互いに反平行になる。   The antiferromagnetic layer 32 is made of, for example, a Mn-TM alloy having a film thickness of 4 nm to 30 nm (preferably 4 nm to 10 nm) (TM includes at least one of Pt, Pd, Ni, Ir, and Rh). . Examples of the Mn-TM alloy include alloys having a composition of PtMn, PdMn, NiMn, IrMn, and PtPdMn. The antiferromagnetic layer 32 exerts an exchange interaction on the first pinned magnetization layer 34 of the pinned magnetization stack 33 to pin the magnetization of the first pinned magnetization layer 34 in a predetermined direction. The fixed magnetization stack 33 has a so-called stacked ferrimagnetic structure in which a first fixed magnetization layer 34, a nonmagnetic coupling layer 35, and a second fixed magnetization layer 36 are sequentially stacked from the antiferromagnetic layer 32 side. In the fixed magnetization stack 33, the magnetization of the first fixed magnetization layer 34 and the magnetization of the second fixed magnetization layer 36 are antiferromagnetically exchange-coupled, and the magnetization directions are antiparallel to each other.

第１および第２固定磁化層３４，３６は、それぞれ膜厚１〜１０ｎｍのＣｏ，ＮｉおよびＦｅのうち、少なくともいずれかを含む強磁性材料から構成される。第１および第２固定磁化層３４，３６に好適な強磁性材料としては、例えば組成がＣｏＦｅ，ＣｏＦｅＢ，ＣｏＦｅＡｌ，ＣｏＦｅＭｇ，ＮｉＦｅ，ＦｅＣｏＣｕ，ＣｏＮｉＦｅ等の合金膜が挙げられる。なお前記第１および第２固定磁化層３４，３６のそれぞれは、１層のみならず、２層以上の積層体としてもよく、また前記積層体は、その各々の層が同一の元素の組み合わせでかつ互いに異なる組成比となる材料により構成してもよく、あるいは、互いに異なる元素を組み合わせた材料より構成してもよい。   The first and second pinned magnetic layers 34 and 36 are each made of a ferromagnetic material containing at least one of Co, Ni, and Fe having a film thickness of 1 to 10 nm. Examples of suitable ferromagnetic materials for the first and second pinned magnetic layers 34 and 36 include alloy films having a composition of CoFe, CoFeB, CoFeAl, CoFeMg, NiFe, FeCoCu, CoNiFe, and the like. Each of the first and second pinned magnetic layers 34 and 36 may be not only one layer but also a laminate of two or more layers, and each of the layers may be a combination of the same elements. And you may comprise with the material from which a composition ratio mutually differs, or you may comprise from the material which combined the mutually different element.

一方、前記第２固定磁化層３６としては、組成がＣｏＦｅＡｌ又はＣｏＦｅＭｇの合金膜を使うことが特に好ましい。これは、以下の理由によるものである。   On the other hand, as the second pinned magnetic layer 36, it is particularly preferable to use an alloy film having a composition of CoFeAl or CoFeMg. This is due to the following reason.

すなわち、組成がＣｏＦｅＡｌやＣｏＦｅＭｇの前記合金膜材料では比抵抗が、組成がＣｏＦｅの合金膜の比抵抗よりも極めて大きく、例えば具体的に組成比がＣｏ９０Ｆｅ１０の合金膜の場合、比抵抗２０μΩｃｍであるに対し、組成比がＣｏ５０Ｆｅ２０Ａｌ３０の合金膜では、比抵抗が前記組成Ｃｏ９０Ｆｅ１０の合金膜の６倍程度の１３０μΩｃｍとなる。また組成比がＣｏ５０Ｆｅ２５Ｍｇ２５の合金膜の場合は、３倍以上の６５μΩｃｍとなる。磁気抵抗変化量はスピン依存バルク散乱係数と比抵抗との積に依存するので、磁気抵抗変化量ΔＲＡは、上記ＣｏＦｅＡｌ合金膜やＣｏＦｅＭｇ合金膜を使った場合、前記ＣｏＦｅ合金膜を使った場合よりもはるかに大きくなる。したがって、第２固定磁化層３６に組成がＣｏＦｅＡｌ又はＣｏＦｅＭｇの合金膜を用いることで、磁気抵抗変化量ΔＲＡを大幅に増加することができる。 That is, the specific resistance of the alloy film material having a composition of CoFeAl or CoFeMg is much larger than the specific resistance of an alloy film having a composition of CoFe. For example, in the case of an alloy film having a specific composition ratio of Co 90 Fe 10 , the specific resistance In contrast, the alloy film having a composition ratio of Co 50 Fe 20 Al 30 has a specific resistance of 130 μΩcm, which is about six times that of the alloy film having the composition Co 90 Fe 10 . Further, in the case of an alloy film having a composition ratio of Co 50 Fe 25 Mg 25 , it is 65 μΩcm, which is three times or more. Since the magnetoresistance change depends on the product of the spin-dependent bulk scattering coefficient and the specific resistance, the magnetoresistance change ΔRA is greater when the CoFeAl alloy film or the CoFeMg alloy film is used than when the CoFe alloy film is used. Will be much larger. Therefore, by using an alloy film having a composition of CoFeAl or CoFeMg for the second pinned magnetization layer 36, the magnetoresistance change ΔRA can be significantly increased.

さらに、前記ＣｏＦｅＡｌ合金及びＣｏＦｅＭｇ合金膜の比抵抗は、前記ＣｏＦｅＡｌ合金膜及びＣｏＦｅＭｇ合金膜の組成比に対する依存性が小さいため、製造の際の組成管理が容易になるという利点もある。なお前記ＣｏＦｅＭｇ合金は、これらの利点から、次に説明する自由磁化層３８にも好適に用いられる。   Furthermore, since the specific resistance of the CoFeAl alloy and the CoFeMg alloy film is less dependent on the composition ratio of the CoFeAl alloy film and the CoFeMg alloy film, there is an advantage that the composition management at the time of manufacture becomes easy. The CoFeMg alloy is also preferably used for the free magnetic layer 38 described below because of these advantages.

前記第２固定磁化層３６において前記ＣｏＦｅＭｇ合金膜は、磁気抵抗変化量ΔＲＡが特に大きい点で、後ほど実施例１で説明するように、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含む、（ＣｏｘＦｅ（１００−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有することが好ましい。但し、Ｃｏ、Ｆｅ、およびＭｇの各含有量は原子％で表す。 In the second pinned magnetization layer 36, the CoFeMg alloy film has a particularly large magnetoresistance change ΔRA, and as will be described later in Example 1, further includes Co and / or Fe as a constituent component, and further includes Mg. (Co x Fe (100-x )) Mg y preferably has a composition of (where 0 ≦ x ≦ 100,0 <y < 30at%). However, each content of Co, Fe, and Mg is expressed in atomic%.

また、第１固定磁化層３４として好適な軟磁性材料としては、比抵抗が低い点で、Ｃｏ６０Ｆｅ４０の組成比を有するＣｏＦｅ合金あるいはＮｉＦｅ組成を有するＮｉＦｅ合金が挙げられる。これは、第１固定磁化層３４の磁化は、第２固定磁化層３６の磁化の向きに対して逆向きとなるので、第１固定磁化層３４が磁気抵抗変化量ΔＲＡを低下させる方向に働くのに対し、比抵抗の低い強磁性材料を用いることで、磁気抵抗変化量ΔＲＡの低下を補償することができるためである。 Also, examples of the soft magnetic material suitable for the first pinned magnetic layer 34 include a CoFe alloy having a composition ratio of Co 60 Fe 40 or a NiFe alloy having a NiFe composition in terms of low specific resistance. This is because the magnetization of the first pinned magnetic layer 34 is opposite to the magnetization direction of the second pinned magnetic layer 36, so that the first pinned magnetic layer 34 acts in a direction to reduce the magnetoresistance change ΔRA. On the other hand, the use of a ferromagnetic material having a low specific resistance can compensate for a decrease in the magnetoresistance change ΔRA.

非磁性結合層３５は、その膜厚が第１固定磁性層３４と第２固定磁化層３６とが反強磁性的に交換結合する範囲に設定される。その範囲は、０．４ｎｍ〜１．５ｎｍ（好ましくは０．４ｎｍ〜０．９ｎｍ）である。非磁性結合層３５は、Ｒｕ，Ｒｈ，Ｉｒ，Ｒｕ系合金、Ｒｈ系合金、Ｉｒ系合金等の非磁性材料から構成される。Ｒｕ系合金としては、ＲｕにＣｏ，Ｃｒ，Ｆｅ，ＮｉおよびＭｎのうちいずれか一つ、あるいはこれらの合金との非磁性材料が好適である。これにより、前記第１固定磁化層３４の磁化の向きが所定の向きから変位したり反転したりする問題を回避できる。   The thickness of the nonmagnetic coupling layer 35 is set in a range where the first pinned magnetic layer 34 and the second pinned magnetic layer 36 are antiferromagnetically exchange coupled. The range is 0.4 nm to 1.5 nm (preferably 0.4 nm to 0.9 nm). The nonmagnetic coupling layer 35 is made of a nonmagnetic material such as Ru, Rh, Ir, Ru-based alloy, Rh-based alloy, or Ir-based alloy. As the Ru-based alloy, one of Ru, Co, Cr, Fe, Ni, and Mn, or a nonmagnetic material with these alloys is suitable. Thereby, it is possible to avoid the problem that the magnetization direction of the first pinned magnetic layer 34 is displaced or reversed from a predetermined direction.

さらに、図示を省略するが、第１固定磁化層３４と反強磁性層３２との間に第１固定磁化層３４よりも飽和磁束密度が高い強磁性材料からなる強磁性接合層を設けてもよい。   Further, although not shown, a ferromagnetic junction layer made of a ferromagnetic material having a saturation magnetic flux density higher than that of the first pinned magnetization layer 34 may be provided between the first pinned magnetization layer 34 and the antiferromagnetic layer 32. Good.

非磁性金属層３７は、例えば、膜厚１．５ｎｍ〜１０ｎｍの非磁性の導電性材料より構成される。非磁性金属層３７に好適な導電性材料としてはＣｕ、Ａｌ、Ｃｒ等が挙げられる。   The nonmagnetic metal layer 37 is made of, for example, a nonmagnetic conductive material having a thickness of 1.5 nm to 10 nm. Suitable conductive materials for the nonmagnetic metal layer 37 include Cu, Al, Cr and the like.

自由磁化層３８は、非磁性金属層３７の表面に設けられ、例えば膜厚が２ｎｍ〜１２ｎｍのＣｏＦｅＭｇ合金から構成される。このＣｏＦｅＭｇ合金は、上述したように、比抵抗が従来のＣｏＦｅ合金よりも極めて大きく、そのため前記自由磁化層３８では磁気抵抗変化量ΔＲＡが、合金ＣｏＦｅを用いた場合よりも極めて大きくなる。   The free magnetic layer 38 is provided on the surface of the nonmagnetic metal layer 37 and is made of, for example, a CoFeMg alloy having a thickness of 2 nm to 12 nm. As described above, this CoFeMg alloy has a much higher specific resistance than that of a conventional CoFe alloy. Therefore, in the free magnetic layer 38, the magnetoresistance change ΔRA is much larger than when the alloy CoFe is used.

ここで、前記固定強磁性層および自由磁化層のいずれか一方に用いられる上記組成範囲を有するＣｏＦｅＭｇ合金膜は、スパッタ法で作成する場合、所定の組成のＣｏＦｅＭｇ合金ターゲットを用いて成膜することが可能であるが、その他にも、Ｃｏ，Ｆｅ，Ｍｇ単体の、合計で３種類のターゲットを使い、同時にスパッタすることも可能であり、さらに前記３種類の単体ターゲットを順次スパッタして、Ｃｏ層とＦｅ層とＭｇ層を積層した積層膜の形に形成することも可能である。本発明において「ＣｏＦｅＭｇ合金膜」は、単にＣｏとＦｅとＭｇの合金膜のみならず、このような積層膜あるいは超格子構造膜をも含むものとする。さらに前記ＣｏＦｅＭｇ合金膜は、例えばＣｏ単体ターゲットとＦｅＭｇ合金よりなるターゲットなど、２種類の元素の合金ターゲットと単体ターゲットを組み合わせて同時放電させる方法や、同様に例えばＭｇ単体ターゲットとＣｏＦｅ合金ターゲットなど、２種類の元素の合金ターゲットと単体ターゲットを積層させて成膜する方法などが適用できる。また前記ＣｏＦｅＭｇ合金膜は、第４元素として、他にＡｌ，Ｇｅ，Ｓｂ，Ｃｕなどの元素を含んでいてもよい。   Here, when the CoFeMg alloy film having the above composition range used for either the fixed ferromagnetic layer or the free magnetic layer is formed by sputtering, it is formed using a CoFeMg alloy target having a predetermined composition. In addition, it is also possible to use a total of three types of targets of Co, Fe, and Mg alone, and simultaneously sputter, and further sequentially sputter the three types of single targets to obtain Co. It is also possible to form a laminated film in which a layer, an Fe layer, and an Mg layer are laminated. In the present invention, the “CoFeMg alloy film” includes not only an alloy film of Co, Fe and Mg but also such a laminated film or a superlattice structure film. Further, the CoFeMg alloy film is a method of simultaneously discharging a combination of an alloy target of two kinds of elements and a single target, such as a target composed of a single Co target and a FeMg alloy, and similarly, for example, a single Mg target and a CoFe alloy target, A method of forming a film by stacking an alloy target of two kinds of elements and a single target can be applied. The CoFeMg alloy film may contain other elements such as Al, Ge, Sb, and Cu as the fourth element.

前記保護層３９は非磁性の導電性材料からなり、例えばＲｕ、Ｃｕ、Ｔａ、Ａｕ、Ａｌ、およびＷのいずれかを含む金属膜から構成され、さらに、これらの金属膜の積層体から構成してもよい。保護層３９は、以下に説明する反強磁性層３２の反強磁性を出現させるための熱処理の際に自由磁化層３８の酸化を防止できる。   The protective layer 39 is made of a nonmagnetic conductive material, and is made of, for example, a metal film containing any one of Ru, Cu, Ta, Au, Al, and W, and is made of a laminate of these metal films. May be. The protective layer 39 can prevent the free magnetic layer 38 from being oxidized during the heat treatment for causing the antiferromagnetism of the antiferromagnetic layer 32 described below to appear.

次に第１例のＧＭＲ膜３０の形成方法を、図２を参照しつつ説明する。   Next, a method for forming the GMR film 30 of the first example will be described with reference to FIG.

図２を参照するに、最初に、スパッタ法、蒸着法、ＣＶＤ法等により、下地層３１から保護層３９までの各々の層を上述した材料を用いて形成する。   Referring to FIG. 2, first, each layer from the base layer 31 to the protective layer 39 is formed by using the above-described materials by sputtering, vapor deposition, CVD, or the like.

次いで、このようにして得られた積層体を磁界中で熱処理する。熱処理は、真空雰囲気で、例えば加熱温度２５０℃〜３２０℃、加熱時間約２〜４時間、印加磁界を１５９２ｋＡ／ｍに設定して実行される。この熱処理により、上述したＭｎ−ＴＭ合金のうちの一部は、規則合金化して反強磁性が出現する。また、熱処理の際に所定の方向に磁界を印加することで、反強磁性層３２の磁化方向を所定方向に配向させ、反強磁性層３２と固定磁化層３３との交換相互作用により固定磁化層３３の磁化を所定の向きに固定することができる。   Next, the laminated body thus obtained is heat-treated in a magnetic field. The heat treatment is performed in a vacuum atmosphere, for example, with a heating temperature of 250 ° C. to 320 ° C., a heating time of about 2 to 4 hours, and an applied magnetic field of 1592 kA / m. By this heat treatment, a part of the Mn-TM alloy described above is ordered and antiferromagnetism appears. Further, by applying a magnetic field in a predetermined direction during the heat treatment, the magnetization direction of the antiferromagnetic layer 32 is oriented in a predetermined direction, and fixed magnetization is generated by exchange interaction between the antiferromagnetic layer 32 and the fixed magnetization layer 33. The magnetization of the layer 33 can be fixed in a predetermined direction.

次いで、下地層３１から保護層３９までの積層体を図１に示すように所定の形状にパターニングしてＧＭＲ膜３０を得る。なお、下記に説明する第２例〜第５例のＧＭＲ膜も第１例のＧＭＲ膜３０と略同様にして形成する。第１例のＧＭＲ膜３０は、自由磁化層３８がＣｏＦｅＭｇからなるため、磁気抵抗変化量ΔＲＡが大きく、したがって、高出力な磁気抵抗効果素子を実現できる。   Next, the laminate from the base layer 31 to the protective layer 39 is patterned into a predetermined shape as shown in FIG. The GMR films of the second to fifth examples described below are formed in substantially the same manner as the GMR film 30 of the first example. The GMR film 30 of the first example has a large magnetoresistance change ΔRA because the free magnetic layer 38 is made of CoFeMg. Therefore, a high-output magnetoresistive element can be realized.

次に、第１の実施の形態に係る磁気抵抗効果素子を構成する第２例のＧＭＲ膜について説明する。この第２例では、図１に示す磁気抵抗効果素子１０のＧＭＲ膜３０の代わりに、図３に示す第２例のＧＭＲ膜を適用する。ただし図３は、第１の実施の形態に係る磁気抵抗効果素子を構成する第２例のＧＭＲ膜の断面図である。図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。   Next, a second example GMR film constituting the magnetoresistive effect element according to the first embodiment will be described. In the second example, the GMR film of the second example shown in FIG. 3 is applied instead of the GMR film 30 of the magnetoresistive effect element 10 shown in FIG. However, FIG. 3 is a cross-sectional view of a second example GMR film constituting the magnetoresistive effect element according to the first embodiment. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

図３を参照するに、第２例のＧＭＲ膜４０は、下地層３１、下部反強磁性層３２、下部固定磁化積層体３３、下部非磁性金属層３７、自由磁化層３８、上部非磁性金属層４７、上部固定磁化積層体４３、上部反強磁性層４２、保護層３９が順次積層された構成からなる。すなわち、ＧＭＲ膜４０は、図２に示す第１例のＧＭＲ膜の自由磁化層３８と保護層３９との間に、上部非磁性金属層４７、上部固定磁化積層体４３、上部反強磁性層４２を設けた対称配置構成を有し、いわゆるデュアルスピンバルブ構造を有する。なお、下部反強磁性層３２、下部固定磁化積層体３３、および下部非磁性金属層３４は、各々、図２に示す第１例のＧＭＲ膜の反強磁性層３２、固定磁化層３３、および非磁性金属層３４と同様の材料および膜厚を有するので同一の符号を用いている。上部非磁性金属層４７、上部反強磁性層４２は、各々、下部非磁性金属層３７、下部反強磁性層３２と同様の材料を用いることができ、膜厚も同様の範囲に設定される。また、上部固定磁化積層体４３は、上部反強磁性層４２側から上部第１固定磁化層４４、上部非磁性結合層４５、上部第２固定磁化層４６が順に積層されてなり、いわゆる積層フェリ構造を有する。上部第１固定磁化層４４、上部非磁性結合層４５、上部第２固定磁化層４６は、各々、下部第１固定磁化層３４、下部非磁性結合層３５、下部第２固定磁化層３６と同様の材料を用いることができ、膜厚も同様の範囲に設定される。   Referring to FIG. 3, the GMR film 40 of the second example includes an underlayer 31, a lower antiferromagnetic layer 32, a lower fixed magnetization stack 33, a lower nonmagnetic metal layer 37, a free magnetic layer 38, and an upper nonmagnetic metal. The layer 47, the upper fixed magnetization stack 43, the upper antiferromagnetic layer 42, and the protective layer 39 are sequentially stacked. That is, the GMR film 40 includes an upper nonmagnetic metal layer 47, an upper fixed magnetization stack 43, and an upper antiferromagnetic layer between the free magnetic layer 38 and the protective layer 39 of the GMR film of the first example shown in FIG. 42, a so-called dual spin valve structure. The lower antiferromagnetic layer 32, the lower pinned magnetization stack 33, and the lower nonmagnetic metal layer 34 are respectively an antiferromagnetic layer 32, a pinned magnetization layer 33, and a GMR film of the first example shown in FIG. Since the same material and film thickness as the nonmagnetic metal layer 34 are used, the same reference numerals are used. The upper nonmagnetic metal layer 47 and the upper antiferromagnetic layer 42 can be made of the same material as the lower nonmagnetic metal layer 37 and the lower antiferromagnetic layer 32, respectively, and the film thicknesses are also set in the same range. . The upper pinned magnetization stack 43 is formed by stacking an upper first pinned magnetization layer 44, an upper nonmagnetic coupling layer 45, and an upper second pinned magnetization layer 46 in this order from the upper antiferromagnetic layer 42 side. It has a structure. The upper first pinned magnetization layer 44, the upper nonmagnetic coupling layer 45, and the upper second pinned magnetization layer 46 are the same as the lower first pinned magnetization layer 34, the lower nonmagnetic coupling layer 35, and the lower second pinned magnetization layer 36, respectively. These materials can be used, and the film thickness is set in the same range.

前記ＧＭＲ膜４０は、自由磁化層３８が、図２に示す第１例のＧＭＲ膜の自由磁化層３８と同様のＣｏＦｅＭｇの組成範囲から選択される。したがって、磁気抵抗効果素子は、第１例のＧＭＲ膜の場合と同様の理由により大きな磁気抵抗変化量ΔＲＡを有している。   In the GMR film 40, the free magnetic layer 38 is selected from the same CoFeMg composition range as the free magnetic layer 38 of the GMR film of the first example shown in FIG. Therefore, the magnetoresistive effect element has a large magnetoresistance change ΔRA for the same reason as in the case of the GMR film of the first example.

さらに前記ＧＭＲ膜４０は、下部固定磁化積層体３３、下部非磁性金属層３７、自由磁化層３８、からなるスピンバルブ構造と、自由磁化層３８、上部非磁性金属層４７、上部固定磁化積層体からなるスピンバルブ構造を合わせ有する。したがって、ＧＭＲ膜４０では磁気抵抗変化量ΔＲＡが、第１例のＧＭＲ膜の磁気抵抗変化量ΔＲＡに対して約２倍まで増加し、その結果、第２例のＧＭＲ膜４０を磁気抵抗効果素子に用いることで、第１例のＧＭＲ膜を用いた場合よりも、いっそう高出力の磁気抵抗効果素子が実現できる。なお、ＧＭＲ膜４０の形成方法は第１例のＧＭＲ膜の形成方法と略同様であるので、説明を省略する。   Further, the GMR film 40 includes a spin valve structure including a lower fixed magnetization stack 33, a lower nonmagnetic metal layer 37, and a free magnetization layer 38, a free magnetization layer 38, an upper nonmagnetic metal layer 47, and an upper fixed magnetization stack. The spin valve structure consisting of Therefore, in the GMR film 40, the magnetoresistance change ΔRA increases to about twice the magnetoresistance change ΔRA of the first example GMR film. As a result, the second example GMR film 40 is changed into the magnetoresistive effect element. As a result, it is possible to realize a magnetoresistive element having a higher output than when the GMR film of the first example is used. Note that the method for forming the GMR film 40 is substantially the same as the method for forming the GMR film of the first example, and a description thereof will be omitted.

次に、第１の実施の形態に係る磁気抵抗効果素子を構成する第３例のＧＭＲ膜について説明する。この第３例では前記図１に示す磁気抵抗効果素子１０のＧＭＲ膜３０の代わりに、図４に断面図を示す第３例のＧＭＲ膜５０を適用する。ただし図４は、第１の実施の形態に係る磁気抵抗効果素子を構成する第３例のＧＭＲ膜の断面図である。本第３例のＧＭＲ膜５０は、前記第２例のＧＭＲ膜４０の変形例である。図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。   Next, a third example GMR film constituting the magnetoresistive effect element according to the first embodiment will be described. In this third example, the GMR film 50 of the third example whose sectional view is shown in FIG. 4 is applied instead of the GMR film 30 of the magnetoresistive effect element 10 shown in FIG. FIG. 4 is a cross-sectional view of a third example GMR film constituting the magnetoresistive effect element according to the first embodiment. The GMR film 50 according to the third example is a modification of the GMR film 40 according to the second example. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

図４を参照するに、第３例のＧＭＲ膜５０は、下地層３１、下部反強磁性層３２、下部固定磁化積層体３３、下部非磁性金属層３７、自由磁化積層体５１、上部非磁性金属層４７、上部固定磁化積層体４３、上部反強磁性層４２、保護層３９が順次積層された構成からなる。すなわち、ＧＭＲ膜５０は、図３に示す第２例のＧＭＲ膜の自由磁化層３８の代
わりに自由磁化積層体５１を設けた構成を有する。自由磁化積層体５１は、下部非磁性金属層３７側から、第１界面磁性層５２、自由磁化層３８、第２界面磁性層５３が順に積層されてなる。自由磁化層３８は、図２に示す第１例のＧＭＲ膜３０の自由磁化層３８と同様の組成範囲のＣｏＦｅＭｇからなる。第１界面磁性層５２および第２界面磁性層５３は、それぞれ、例えば厚さが０．２ｎｍ〜２．５ｎｍの範囲に設定され、軟磁性材料からなり、拡散防止層として機能する。 Referring to FIG. 4, the GMR film 50 of the third example includes an underlayer 31, a lower antiferromagnetic layer 32, a lower fixed magnetization stack 33, a lower nonmagnetic metal layer 37, a free magnetization stack 51, and an upper nonmagnetic layer. The metal layer 47, the upper fixed magnetization stack 43, the upper antiferromagnetic layer 42, and the protective layer 39 are sequentially stacked. That is, the GMR film 50 has a configuration in which a free magnetic layered body 51 is provided instead of the free magnetic layer 38 of the GMR film of the second example shown in FIG. The free magnetization laminate 51 is formed by laminating a first interface magnetic layer 52, a free magnetization layer 38, and a second interface magnetic layer 53 in this order from the lower nonmagnetic metal layer 37 side. The free magnetic layer 38 is made of CoFeMg having the same composition range as the free magnetic layer 38 of the GMR film 30 of the first example shown in FIG. The first interface magnetic layer 52 and the second interface magnetic layer 53 are each set to a thickness in the range of, for example, 0.2 nm to 2.5 nm, are made of a soft magnetic material, and function as a diffusion prevention layer.

第１界面磁性層５２および第２界面磁性層５３は、それぞれスピン依存界面散乱係数が前記ＣｏＦｅＭｇ合金膜よりも大きな材料、例えばＣｏＦｅ合金膜、ＮｉＦｅ合金膜から選択されることが好ましい。前記ＣｏＦｅ合金膜としては、ＣｏＦｅ組成の合金以外にも、例えば、ＣｏＦｅＮｉ，ＣｏＦｅＣｕ，ＣｏＦｅＣｒ，ＣｏＦｅＡｌ等の組成の合金が挙げられる。また、ＮｉＦｅ合金膜としては、ＮｉＦｅ組成の合金以外にも、例えばＮｉＦｅＣｕ、ＮｉＦｅＣｒ等の組成の合金が挙げられる。前記自由磁化積層体５１では、自由磁化層３８をこのようなスピン依存界面散乱係数が大きな軟磁性材料膜で挟むことで、磁気抵抗変化量ΔＲＡを増加させることができる。なお、第１界面磁性層５２および第２界面磁性層５３には同じ組成の材料を用いてもよく、同じ元素を含み、組成比の異なる材料を用いてもよく、互いに異なる元素からなる材料を用いてもよい。   The first interface magnetic layer 52 and the second interface magnetic layer 53 are preferably selected from materials having a spin-dependent interface scattering coefficient larger than that of the CoFeMg alloy film, for example, a CoFe alloy film and a NiFe alloy film. Examples of the CoFe alloy film include alloys having a composition such as CoFeNi, CoFeCu, CoFeCr, and CoFeAl in addition to an alloy having a CoFe composition. Further, as the NiFe alloy film, an alloy having a composition such as NiFeCu, NiFeCr, or the like can be cited other than an alloy having a NiFe composition. In the free magnetic layered body 51, the magnetoresistive change ΔRA can be increased by sandwiching the free magnetic layer 38 with a soft magnetic material film having a large spin-dependent interface scattering coefficient. The first interface magnetic layer 52 and the second interface magnetic layer 53 may be made of materials having the same composition, may be made of materials containing the same elements and having different composition ratios, and materials made of elements different from each other. It may be used.

さらに第１界面磁性層５２および第２界面磁性層５３には、自由磁化層３８と異なる組成比のＣｏＦｅＭｇ合金膜を用いてもよい。例えば、第１界面磁性層５２および第２界面磁性層５３には、自由磁化層３８よりも保磁力の高い材料を用いてもよい。   Furthermore, a CoFeMg alloy film having a composition ratio different from that of the free magnetic layer 38 may be used for the first interface magnetic layer 52 and the second interface magnetic layer 53. For example, the first interfacial magnetic layer 52 and the second interfacial magnetic layer 53 may be made of a material having a higher coercive force than the free magnetic layer 38.

第３例のＧＭＲ膜５０は、第２例のＧＭＲ膜と同様の効果を有し、さらに自由磁化層３８の両面に第１界面磁性層５２および第２界面磁性層５３を設けることにより、磁気抵抗変化量ΔＲＡを第２例のＧＭＲ膜４０よりもさらに増加することができる。   The GMR film 50 of the third example has the same effect as that of the GMR film of the second example, and further, the first interface magnetic layer 52 and the second interface magnetic layer 53 are provided on both surfaces of the free magnetic layer 38, thereby The resistance change amount ΔRA can be further increased as compared with the GMR film 40 of the second example.

次に、第１の実施の形態に係る磁気抵抗効果素子を構成する第４例のＧＭＲ膜について説明する。この第４例では、図１に示す磁気抵抗効果素子１０のＧＭＲ膜３０の代わりに、第４例に断面図を示すＧＭＲ膜６０を適用する。第４例のＧＭＲ膜６０は、第２例のＧＭＲ膜４０の変形例である。図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。   Next, a fourth example GMR film constituting the magnetoresistive effect element according to the first embodiment will be described. In the fourth example, instead of the GMR film 30 of the magnetoresistive effect element 10 shown in FIG. 1, a GMR film 60 shown in a sectional view in the fourth example is applied. The GMR film 60 of the fourth example is a modification of the GMR film 40 of the second example. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

図５を参照するに、第４例のＧＭＲ膜６０は、下地層３１、下部反強磁性層３２、下部固定磁化積層体６１、下部非磁性金属層３７、自由磁化層３８、上部非磁性金属層４７、上部固定磁化積層体６２、上部反強磁性層４２、保護層３９が順次積層された構成からなる。すなわち、ＧＭＲ膜６０は、図３に示す第２例のＧＭＲ膜４０の下部固定磁化積層体３３および上部固定磁化積層体４３の代わりに、下部固定磁化積層体６１および上部固定磁化積層体６２を設けた構成を有する。   Referring to FIG. 5, the GMR film 60 of the fourth example includes an underlayer 31, a lower antiferromagnetic layer 32, a lower fixed magnetization stack 61, a lower nonmagnetic metal layer 37, a free magnetic layer 38, and an upper nonmagnetic metal. The layer 47, the upper pinned magnetic laminate 62, the upper antiferromagnetic layer 42, and the protective layer 39 are sequentially laminated. That is, the GMR film 60 includes a lower fixed magnetization stack 61 and an upper fixed magnetization stack 62 instead of the lower fixed magnetization stack 33 and the upper fixed magnetization stack 43 of the GMR film 40 of the second example shown in FIG. The configuration is provided.

前記下部固定磁化積層体６１は、下部第２固定磁化層３６の下部非磁性金属層３７側に第３界面磁性層６３を有し、上部固定磁化積層体６２は、上部第２固定磁化層４６の上部非磁性金属層４７側に第４界面磁性層６４を有する。第３界面磁性層６３および第４界面磁性層６４は、それぞれ、例えば厚さが０．２ｎｍ〜２．５ｎｍの範囲に設定され、強磁性材料から構成される。第３界面磁性層６３および第４界面磁性層６４は、それぞれ、スピン依存界面散乱がＣｏＦｅＭｇよりも大きな材料、例えばＣｏＦｅ合金膜や合金膜から選択されることが好ましい。ＣｏＦｅ合金としては、ＣｏＦｅ組成の合金の他に、例えば、ＣｏＦｅＮｉ、ＣｏＦｅＣｕ、ＣｏＦｅＣｒ、ＣｏＦｅＡｌ等の組成の合金が挙げられる。また、ＮｉＦｅ合金としては、ＮｉＦｅ素子の合金の他に、例えばＮｉＦｅＣｕ，ＮｉＦｅＣｒ等の組成の合金が挙げられる。これにより、磁気抵抗変化量ΔＲＡを増加させることができる。なお、第３界面磁性層６３および第４界面磁性層６４には同じ組成の材料を用いてもよく、同じ元素を含み、組成比の異なる材料を用いてもよく、互いに異なる元素からなる材料を用いてもよい。   The lower pinned magnetization stack 61 includes a third interface magnetic layer 63 on the lower nonmagnetic metal layer 37 side of the lower second pinned magnetization layer 36, and the upper pinned magnetization stack 62 includes an upper second pinned magnetization layer 46. A fourth interfacial magnetic layer 64 is provided on the upper nonmagnetic metal layer 47 side. The third interface magnetic layer 63 and the fourth interface magnetic layer 64 are each set to a thickness in the range of 0.2 nm to 2.5 nm, for example, and are made of a ferromagnetic material. Each of the third interface magnetic layer 63 and the fourth interface magnetic layer 64 is preferably selected from materials whose spin-dependent interface scattering is larger than that of CoFeMg, for example, a CoFe alloy film or an alloy film. Examples of the CoFe alloy include alloys having a composition such as CoFeNi, CoFeCu, CoFeCr, and CoFeAl in addition to an alloy having a CoFe composition. In addition to NiFe element alloys, NiFe alloys include alloys having compositions such as NiFeCu and NiFeCr. Thereby, the magnetoresistance change ΔRA can be increased. The third interface magnetic layer 63 and the fourth interface magnetic layer 64 may be made of materials having the same composition, may be made of materials containing the same elements and having different composition ratios, and materials made of elements different from each other. It may be used.

第４例のＧＭＲ膜６０は、第２例のＧＭＲ膜と同様の効果を有し、さらに第３界面磁性層６３および第４界面磁性層６４を設けることにより磁気抵抗変化量ΔＲＡを第２例のＧＭＲ膜よりもさらに増加することができる。   The GMR film 60 of the fourth example has the same effect as that of the GMR film of the second example. Further, by providing the third interface magnetic layer 63 and the fourth interface magnetic layer 64, the magnetoresistance change ΔRA is set to the second example. It can be further increased than that of the GMR film.

次に、第１の実施の形態に係る磁気抵抗効果素子を構成する第５例のＧＭＲ膜について説明する。この第５例では、図１に示す磁気抵抗効果素子１０のＧＭＲ膜３０の代わりに、図６に断面図を示すＧＭＲ膜６５を適用する。この第５例のＧＭＲ膜は、先の第４例のＧＭＲ膜の変形例である。図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。   Next, a fifth example GMR film constituting the magnetoresistive effect element according to the first embodiment will be described. In this fifth example, a GMR film 65 whose cross-sectional view is shown in FIG. 6 is applied instead of the GMR film 30 of the magnetoresistive effect element 10 shown in FIG. The GMR film of the fifth example is a modification of the GMR film of the fourth example. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

図６を参照するに、第５例のＧＭＲ膜６５は、下地層３１、下部反強磁性層３２、下部固定磁化積層体６６、下部非磁性金属層３７、自由磁化層３８、上部非磁性金属層４７、上部固定磁化積層体６７、上部反強磁性層４２、保護層３９が順次積層された構成からなる。すなわち、ＧＭＲ膜６５は、下部固定磁化積層体６６が下部第２固定磁化層３６の下部非磁性結合層３５側に第１強磁性接合層６８を有し、上部固定磁化積層体６７が上部第２固定磁化層４６の上部非磁性結合層４５側に第２強磁性接合層６９を有する以外は、第４例のＧＭＲ膜と同様の構成からなる。   Referring to FIG. 6, the GMR film 65 of the fifth example includes an underlayer 31, a lower antiferromagnetic layer 32, a lower fixed magnetization stack 66, a lower nonmagnetic metal layer 37, a free magnetic layer 38, and an upper nonmagnetic metal. The layer 47, the upper pinned magnetization stack 67, the upper antiferromagnetic layer 42, and the protective layer 39 are sequentially stacked. That is, in the GMR film 65, the lower pinned magnetization stack 66 has the first ferromagnetic junction layer 68 on the lower nonmagnetic coupling layer 35 side of the lower second pinned magnetization layer 36, and the upper pinned magnetization stack 67 has the upper first magnetization layer 67. The structure is the same as that of the GMR film of the fourth example except that the second pinned magnetization layer 46 has the second ferromagnetic junction layer 69 on the upper nonmagnetic coupling layer 45 side.

第１強磁性接合層６８および第２強磁性接合層６９は、その厚さが、例えば０．２ｎｍ〜２．５ｎｍの範囲に設定され、Ｃｏ，ＮｉおよびＦｅのいずれかを少なくとも含む強磁性材料、例えば、ＣｏＦｅ合金，ＣｏＦｅＢ合金，ＣｏＮｉＦｅ合金などからなる。第１強磁性接合層６８および第２強磁性接合層６９は、その飽和磁化が、それぞれ下部第２固定磁化層３６および上部第２固定磁化層４６の飽和磁化よりも大きな強磁性材料を用いることで、それぞれ下部第１固定磁化層３４、上部第１固定磁化層４４との交換結合を高め、下部第２固定磁化層３６および上部第２固定磁化層４６の磁化の向きをより安定化できる。その結果、磁気抵抗変化量ΔＲＡを安定化できる。   The first ferromagnetic junction layer 68 and the second ferromagnetic junction layer 69 have a thickness set in the range of, for example, 0.2 nm to 2.5 nm and include at least one of Co, Ni, and Fe. For example, it is made of a CoFe alloy, a CoFeB alloy, a CoNiFe alloy, or the like. The first ferromagnetic junction layer 68 and the second ferromagnetic junction layer 69 are made of a ferromagnetic material whose saturation magnetization is larger than that of the lower second fixed magnetization layer 36 and the upper second fixed magnetization layer 46, respectively. Thus, the exchange coupling with the lower first pinned magnetic layer 34 and the upper first pinned magnetic layer 44 can be enhanced, and the magnetization directions of the lower second pinned magnetic layer 36 and the upper second pinned magnetic layer 46 can be further stabilized. As a result, the magnetoresistance change ΔRA can be stabilized.

以上説明したように、第５例のＧＭＲ膜６５では、第２例のＧＭＲ膜と同様の効果を有し、さらに第１強磁性接合層６８および第２強磁性接合層６９を設けることにより、磁気抵抗変化量ΔＲＡを安定化できる。   As described above, the GMR film 65 of the fifth example has the same effect as the GMR film of the second example, and further, by providing the first ferromagnetic junction layer 68 and the second ferromagnetic junction layer 69, The magnetoresistance change ΔRA can be stabilized.

なお、第１の実施の形態では、第３例〜第５例のＧＭＲ膜は、第２例のデュアルスピンバルブ構造のＧＭＲ膜の変形例であるが、第３例〜第５例のＧＭＲ膜と同様の変形例を図２のシングルスピンバルブ構造のＧＭＲ膜の自由磁化層や第２固定磁化層に適用してもよい。また、第３例のＧＭＲ膜と、第４例あるいは第５例のＧＭＲ膜とを互いに組み合わせてもよい。   In the first embodiment, the GMR films of the third to fifth examples are modified examples of the GMR film having the dual spin valve structure of the second example, but the GMR films of the third to fifth examples. A modification similar to the above may be applied to the free magnetic layer and the second pinned magnetic layer of the GMR film having the single spin valve structure of FIG. Further, the GMR film of the third example and the GMR film of the fourth example or the fifth example may be combined with each other.

実施例１は、図2に示す第１の実施の形態の第２例のＧＭＲ膜の構成を有する磁気抵抗効果素子を作製したものである。   Example 1 is a magnetoresistive effect element having the configuration of the GMR film of the second example of the first embodiment shown in FIG.

図7は、実施例１による、自由磁化層の組成とΔＲＡの関係を示す図である。ただし図７中、Ｎｏ．１〜Ｎｏ．１１のサンプルは、自由磁化層に用いたＣｏＦｅＭｇ合金の組成を異ならせている。   FIG. 7 is a graph showing the relationship between the composition of the free magnetic layer and ΔRA according to the first embodiment. However, in FIG. 1-No. 11 samples have different compositions of the CoFeMg alloys used for the free magnetic layer.

実施例１の各サンプルは、以下のようにして作製した。   Each sample of Example 1 was produced as follows.

最初に、熱酸化膜が形成されたシリコン基板上に、下部電極として、シリコン基板側からＣｕ（２５０ｎｍ）／ＮｉＦｅ（５０ｎｍ）の積層膜を形成し、次いで下記の組成および膜厚を有する下地層〜保護層までの積層体の各層を超高真空（真空度：２×１０-6Ｐａ以下）雰囲気でスパッタ装置を用いて、基板の加熱を行わないで形成し、次いで、反強磁性層の反強磁性を出現させるための熱処理を行った。熱処理の条件は、加熱温度３００℃、処理時間３時間、印加磁界１９５２ｋＡ／ｍとした。 First, a Cu (250 nm) / NiFe (50 nm) laminated film is formed from the silicon substrate side as a lower electrode on a silicon substrate on which a thermal oxide film is formed, and then an underlayer having the following composition and thickness Each layer of the laminate up to the protective layer is formed in a super high vacuum atmosphere (vacuum degree: 2 × 10 −6 Pa or less) using a sputtering apparatus without heating the substrate, and then the antiferromagnetic layer Heat treatment was performed to make antiferromagnetism appear. The heat treatment conditions were a heating temperature of 300 ° C., a treatment time of 3 hours, and an applied magnetic field of 1952 kA / m.

次いで、このようにして得られた積層体をイオンミリングにより研削し、０．１μｍ2〜０．６μｍ2の範囲の６種類の接合面積を有する積層体を作製した。なお実施例１では、各接合面積毎に、４０個の積層体を作製した。次いで、このようにして得られた積層体をシリコン酸化膜で覆い、次いでドライエッチングにより保護層を露出させ、保護層に接触するようにＡｕ膜からなる上部電極を形成した。以下に、実施例１のサンプルＮｏ．１〜Ｎｏ．１１のＧＭＲ膜の具体的構成を示す。なお、括弧内の数値は膜厚を表し、以下の実施例において同様である。 Then, the thus obtained laminate was ground by ion milling, to produce a laminate, having six junction area in the range of 0.1μm 2 ~0.6μm 2. In Example 1, 40 laminated bodies were produced for each bonding area. Next, the laminated body thus obtained was covered with a silicon oxide film, then the protective layer was exposed by dry etching, and an upper electrode made of an Au film was formed so as to be in contact with the protective layer. In the following, sample No. 1-No. 11 shows a specific configuration of 11 GMR films. In addition, the numerical value in parenthesis represents a film thickness and is the same in the following examples.

下地層：Ru（４ｎｍ）
反強磁性層：ＩｒＭｎ（7ｎｍ）
第１固定磁化層：Ｃｏ60Ｆｅ40（3ｎｍ）
非磁性結合層：Ｒｕ（０．７２ｎｍ）
第２固定磁化層：Ｃｏ40Ｆｅ60（4ｎｍ）
非磁性金属層：Ｃｕ（３．５ｎｍ）
自由磁化層：ＣｏＦｅＭｇ（4.7ｎｍ）
非磁性金属層：Ｃｕ（３．５ｎｍ）
保護層：Ｒｕ（５ｎｍ）
このようにして得られたサンプルＮｏ．１〜Ｎｏ．１１のそれぞれについて、センス電流の電流値を２ｍＡに設定し、外部磁界を下部および上部第２固定磁化層の磁化方向に平行に−７９ｋＡ／ｍ〜７９ｋＡ／ｍの範囲で掃引し、下部電極と上部電極との間の電圧をデジタルボルトメータにより測定し、磁気抵抗曲線を得た。さらにこの磁気抵抗曲線の最大値と最小値との差から磁気抵抗変化量ΔＲＡを求めた。また自由磁化層の保磁力は、外部磁界を上記と同じ方向に−７．９ｋＡ／ｍ〜７．９ｋＡ／ｍの範囲で掃引し、得られた磁気抵抗曲線のヒステリシスから求めた。 Underlayer: Ru (4 nm)
Antiferromagnetic layer: IrMn (7 nm)
First pinned magnetic layer: Co 60 Fe 40 (3 nm)
Nonmagnetic coupling layer: Ru (0.72 nm)
Second pinned magnetic layer: Co 40 Fe 60 (4 nm)
Nonmagnetic metal layer: Cu (3.5 nm)
Free magnetic layer: CoFeMg (4.7 nm)
Nonmagnetic metal layer: Cu (3.5 nm)
Protective layer: Ru (5 nm)
Sample No. obtained in this way. 1-No. 11, the current value of the sense current is set to 2 mA, the external magnetic field is swept in the range of −79 kA / m to 79 kA / m parallel to the magnetization direction of the lower and upper second fixed magnetization layers, The voltage between the upper electrode was measured with a digital voltmeter to obtain a magnetoresistance curve. Further, the magnetoresistance change ΔRA was obtained from the difference between the maximum value and the minimum value of the magnetoresistance curve. The coercive force of the free magnetic layer was determined from the hysteresis of the magnetoresistive curve obtained by sweeping the external magnetic field in the same direction as described above in the range of −7.9 kA / m to 7.9 kA / m.

図７を参照するに、サンプルＮｏ．１〜１１では、ＭＲ比はおおよそ２．８８ｍΩμｍ2以上であり、組成依存性が低く、広い範囲で高いΔＲＡが得られるのがわかる。 Referring to FIG. 1 to 11, the MR ratio is approximately 2.88 mΩμm 2 or more, and the dependency on the composition is low, and a high ΔRA can be obtained in a wide range.

図８は、従来自由磁化層に、従来のＣｏ40Ｆｅ60の合金膜を用いた場合と、本発明のＣｏＦｅＭｇ合金膜を用いた場合を比較したグラフである。 FIG. 8 is a graph comparing the case where a conventional Co 40 Fe 60 alloy film is used for the conventional free magnetic layer and the case where the CoFeMg alloy film of the present invention is used.

図８を参照するに、本発明のＣｏＦｅＭｇ合金膜ではΔＲＡは、Ｍｇを１０ａｔ％入れるだけで大きく上昇し、Ｃｏ68Ｆｅ22Ｍｇ10の組成で最大４．４mΩμｍ２と、ＣｏＦｅ合金膜の場合の１．５倍の値を示す。また図示の実験では、自由磁化層にのみ前記ＣｏＦｅＭｇ合金膜を用いているが、この材料をさらに第二固定磁化層に用いることで更なるΔＲＡの上昇が可能である。 Referring to FIG. 8, in the CoFeMg alloy film of the present invention, ΔRA greatly increases by adding Mg at 10 at%, and the maximum composition of Co 68 Fe 22 Mg 10 is 4.4 mΩμm 2, which is the case of the CoFe alloy film. The value is 1.5 times. In the illustrated experiment, the CoFeMg alloy film is used only for the free magnetic layer. However, by using this material for the second pinned magnetic layer, ΔRA can be further increased.

一方、Ｍｇを３０ａｔ％導入した場合には、ほぼ従来のＣｏＦｅ膜と同程度まで前記ΔＲＡの値が低下するが、この現象は、非磁性のＭｇ原子を３０ａｔ％添加することで前記ＣｏＦｅＭｇ合金の磁気モーメントが低下し、Mg組成の上昇に伴う比抵抗の増加効果と打ち消しあってΔＲＡの値が低下したものと考えられる。このことからMgの組成範囲は３０原子％以下（Ｍｇ≦３０ａｔ％）に限定されることが結論される。   On the other hand, when Mg is introduced at 30 at%, the value of ΔRA decreases to almost the same level as that of the conventional CoFe film. This phenomenon is caused by adding 30 at% of nonmagnetic Mg atoms to the CoFeMg alloy. It is considered that the value of ΔRA decreased due to the decrease in the magnetic moment and the cancellation of the effect of increasing the specific resistance accompanying the increase in Mg composition. From this, it is concluded that the composition range of Mg is limited to 30 atomic% or less (Mg ≦ 30 at%).

また図８より、自由層磁化の回転のしやすさを示すＨｃｆも、ＣｏＦｅ合金の場合より低くこの点でも前記ＣｏＦｅＭｇ合金は、従来材料よりも有効である。
（第２の実施の形態）
本発明の第２の実施の形態に係る磁気ヘッドは、磁気抵抗効果素子がトンネル磁気抵抗効果（以下、「ＴＭＲ」と称する。）膜を有するものである。第２の実施の形態に係る磁気ヘッドの構成は、図１に示す磁気ヘッドのＧＭＲ膜３０の代わりにＴＭＲ膜を設けた以外は、同様であるので、磁気ヘッドの説明を省略する。 Further, from FIG. 8, Hcf indicating the ease of rotation of the free layer magnetization is also lower than in the case of the CoFe alloy. In this respect, the CoFeMg alloy is more effective than the conventional material.
(Second Embodiment)
In the magnetic head according to the second embodiment of the present invention, the magnetoresistive element has a tunnel magnetoresistive (hereinafter referred to as “TMR”) film. The configuration of the magnetic head according to the second embodiment is the same except that a TMR film is provided instead of the GMR film 30 of the magnetic head shown in FIG.

図９〜図１３は、本発明の第２の実施の形態に係る磁気抵抗効果素子を構成する第１例〜第５例のＴＭＲ膜の断面図である。   9 to 13 are cross-sectional views of the TMR films of the first to fifth examples constituting the magnetoresistance effect element according to the second embodiment of the present invention.

図９〜図１３を参照するに、第１例〜第５例のＴＭＲ膜７０〜７４は、先の図２〜図６に示したＧＭＲ膜３０，４０，５０，６０，６５において、非磁性金属層（下部非磁性金属層）３７および上部非磁性金属層４７を、各々、絶縁材料からなる非磁性絶縁層（下部非磁性絶縁層３７ａ）および上部非磁性絶縁層４７ａ（以下、「非磁性絶縁層３７ａ，４７ａ」と略称する。）に置き換えた以外は同様の構成からなる。   Referring to FIGS. 9 to 13, the TMR films 70 to 74 of the first to fifth examples are nonmagnetic in the GMR films 30, 40, 50, 60 and 65 shown in FIGS. The metal layer (lower nonmagnetic metal layer) 37 and the upper nonmagnetic metal layer 47 are respectively divided into a nonmagnetic insulating layer (lower nonmagnetic insulating layer 37a) and an upper nonmagnetic insulating layer 47a (hereinafter referred to as “nonmagnetic”) made of an insulating material. The structure is the same except that the layers are abbreviated as “insulating layers 37a and 47a”.

非磁性絶縁層３７ａ，４７ａは、例えば厚さが０．２ｎｍ〜２．０ｎｍからなり、Ｍｇ、Ａｌ、Ｔｉ、およびＺｒからなる群のうちいずれか１種の酸化物からなる。このような酸化物としては、ＭｇＯ、ＡｌＯx、ＴｉＯx、ＺｒＯxが挙げられる。ここで、ｘは各々材料の化合物の化学量論組成からずれた組成でもよいことを示す。特に、非磁性絶縁層３７ａ，４７ａは、結晶質のＭｇＯであることが好ましく、特にトンネル抵抗変化率が増加する点で、ＭｇＯの（００１）面は、膜面に略平行であることが好ましい。また、非磁性絶縁層３７ａ，４７ａはＡｌ、Ｔｉ、およびＺｒからなる群のうちいずれか１種の窒化物、あるいは酸窒化物から構成されてもよい。このような窒化物としては、ＡｌＮ、ＴｉＮ、ＺｒＮが挙げられる。非磁性絶縁層３７ａ，４７ａの形成方法は、スパッタ法、ＣＶＤ法、蒸着法を用いて上記の材料を直接形成してもよく、スパッタ法、ＣＶＤ法、蒸着法を用いて金属膜を形成後、酸化処理や窒化処理を行って酸化膜や窒化膜に変換してもよい。   The nonmagnetic insulating layers 37a and 47a have a thickness of 0.2 nm to 2.0 nm, for example, and are made of any one of oxides selected from the group consisting of Mg, Al, Ti, and Zr. Examples of such oxides include MgO, AlOx, TiOx, and ZrOx. Here, x indicates that the composition may deviate from the stoichiometric composition of the compound of each material. In particular, the nonmagnetic insulating layers 37a and 47a are preferably made of crystalline MgO. In particular, the (001) plane of MgO is preferably substantially parallel to the film plane in terms of increasing the tunnel resistance change rate. . Further, the nonmagnetic insulating layers 37a and 47a may be made of any one nitride or oxynitride selected from the group consisting of Al, Ti, and Zr. Examples of such nitride include AlN, TiN, and ZrN. As a method for forming the nonmagnetic insulating layers 37a and 47a, the above materials may be directly formed using a sputtering method, a CVD method, or a vapor deposition method, and after forming a metal film using a sputtering method, a CVD method, or a vapor deposition method. Alternatively, the oxide film or the nitride film may be converted by performing an oxidation process or a nitridation process.

単位面積のトンネル抵抗変化量は、第１の実施の形態の単位面積の磁気抵抗変化量ΔＲＡの測定と同様して得られる。単位面積のトンネル抵抗変化量は、第１の実施の形態と同様の理由で、自由磁化層３８にＣｏＦｅMgを用いることで、単位面積のトンネル抵抗変化量の増加が見込まれる。また、第２固定磁化層３６，４６に前記ＣｏＦｅMg合金あるいはＣｏＦｅＡｌ合金を用いることで、さらなる単位面積のトンネル抵抗変化量の増加もまた見込まれる。   The amount of change in tunnel resistance of the unit area is obtained in the same manner as the measurement of the amount of change in magnetoresistance ΔRA of the unit area in the first embodiment. The amount of change in tunnel resistance of the unit area is expected to increase by using CoFeMg for the free magnetic layer 38 for the same reason as in the first embodiment. Further, by using the CoFeMg alloy or CoFeAl alloy for the second pinned magnetic layers 36 and 46, a further increase in the amount of change in tunnel resistance of the unit area is also expected.

自由磁化層３８のＣｏＦｅMgの組成範囲は、第１の実施の形態で説明した自由磁化層のＣｏＦｅMgの組成範囲と同様の範囲に設定される。これにより、高出力なＴＭＲ膜を有する磁気抵抗効果素子を実現できる。   The composition range of CoFeMg of the free magnetic layer 38 is set to the same range as the composition range of CoFeMg of the free magnetic layer described in the first embodiment. Thereby, a magnetoresistive effect element having a high output TMR film can be realized.

なお、第２の実施の形態では、第３例〜第５例のＴＭＲ膜は、第２例のＴＭＲ膜の変形例であるが、第３例〜第５例のＴＭＲ膜と同様の変形例を図9のＴＭＲ膜の自由磁化層や第２固定磁化層に適用してもよい。また、第３例のＴＭＲ膜と、第４例あるいは第５例のＴＭＲ膜とを互いに組み合わせてもよい。
（第３の実施の形態）
図１4は、本発明の実施の第３の実施の形態に係る磁気記憶装置の要部を示す平面図である。 In the second embodiment, the TMR films of the third to fifth examples are modifications of the TMR film of the second example. However, modifications similar to the TMR films of the third to fifth examples are used. May be applied to the free magnetic layer and the second pinned magnetic layer of the TMR film of FIG. Further, the TMR film of the third example and the TMR film of the fourth example or the fifth example may be combined with each other.
(Third embodiment)
FIG. 14 is a plan view showing the main part of a magnetic memory device according to the third embodiment of the present invention.

図１4を参照するに、磁気記憶装置９０は大略ハウジング９１からなる。ハウジング９１内には、スピンドル（図示されず）により駆動されるハブ９２、ハブ９２に固定されスピンドルにより回転される磁気記録媒体９３、アクチュエータユニット９４、アクチュエータユニット９４に支持され、磁気記録媒体９３の径方向に駆動されるアーム９５およびサスペンション９６、サスペンション９６に支持された磁気ヘッド９８が設けられている。磁気記録媒体９３は面内磁気記録方式あるいは垂直磁気記録方式のいずれの磁気記録媒体でもよく、斜め異方性を有する記録媒体でもよい。磁気記録媒体９３は磁気ディスクに限定されず、磁気テープであってもよい。
磁気ヘッド９８は、図１に示したように、セラミック基板１１の上に形成された磁気抵抗効果素子２０と、その上に形成された誘導型記録素子１３から構成される。誘導型記録素子１３は面内記録用のリング型の記録素子でもよく、垂直磁気記録用の単磁極型の記録
素子でもよく、他の公知の記録素子でもよい。磁気抵抗効果素子は、第１の実施の形態の第１例〜第５例のいずれかのＧＭＲ膜、あるいは第２の実施の形態の第１例〜第５例のいずれかのＴＭＲ膜を備える。したがって、磁気抵抗効果素子は単位面積の磁気抵抗変化量ΔＲＡ、あるいは単位面積のトンネル抵抗変化量が大きく、高出力である。よって、磁気記憶装置９０は、高記録密度記録に好適である。なお、第３の実施の形態に係る磁気記憶装置９０の基本構成は、図１4に示すものに限定されるものではない。
（第４の実施の形態）
図１５（Ａ）は本発明の第４の実施の形態に係る第１例の磁気メモリ装置の断面図、図１５（Ｂ）は前記図１５（Ａ）に示すＧＭＲ膜の構成図である。また、図１6は、第１例の磁気メモリ装置の一つのメモリセルの等価回路図である。なお、図１5（Ａ）では方向を示すために直交座標軸を合わせて示している。このうち、Ｙ1およびＹ2方向は紙面に垂直な方向であり、Ｙ1方向は紙面の奥に向かう方向、Ｙ2方向は紙面の手前に向かう方向である。なお、以下の説明において例えば単にＸ方向という場合は、Ｘ1方向およびＸ2方向のいずれでもよいことを示し、Ｙ方向およびＺ方向についても同様である。
図中、先に説明した部分に対応部分には同一の参照符号を付し、説明を省略する。 Referring to FIG. 14, the magnetic storage device 90 generally comprises a housing 91. In the housing 91, a hub 92 driven by a spindle (not shown), a magnetic recording medium 93 fixed to the hub 92 and rotated by the spindle, an actuator unit 94, and supported by the actuator unit 94, the magnetic recording medium 93 An arm 95 and a suspension 96 that are driven in the radial direction, and a magnetic head 98 supported by the suspension 96 are provided. The magnetic recording medium 93 may be either a longitudinal magnetic recording system or a perpendicular magnetic recording system, or a recording medium having oblique anisotropy. The magnetic recording medium 93 is not limited to a magnetic disk but may be a magnetic tape.
As shown in FIG. 1, the magnetic head 98 includes a magnetoresistive effect element 20 formed on the ceramic substrate 11 and an inductive recording element 13 formed thereon. The inductive recording element 13 may be a ring-type recording element for in-plane recording, a single-pole recording element for perpendicular magnetic recording, or another known recording element. The magnetoresistive element includes the GMR film of any one of the first to fifth examples of the first embodiment, or the TMR film of any of the first to fifth examples of the second embodiment. . Therefore, the magnetoresistive effect element has a large magnetoresistance change amount ΔRA per unit area or a tunnel resistance change amount per unit area and a high output. Therefore, the magnetic storage device 90 is suitable for high recording density recording. The basic configuration of the magnetic storage device 90 according to the third embodiment is not limited to that shown in FIG.
(Fourth embodiment)
FIG. 15A is a cross-sectional view of a first example magnetic memory device according to the fourth embodiment of the present invention, and FIG. 15B is a configuration diagram of the GMR film shown in FIG. 15A. FIG. 16 is an equivalent circuit diagram of one memory cell of the magnetic memory device of the first example. In FIG. 15A, the orthogonal coordinate axes are shown together to indicate the direction. Of these, the Y1 and Y2 directions are directions perpendicular to the paper surface, the Y1 direction is the direction toward the back of the paper surface, and the Y2 direction is the direction toward the front of the paper surface. In the following description, for example, simply referring to the X direction indicates that either the X1 direction or the X2 direction may be used, and the same applies to the Y direction and the Z direction.
In the figure, the same reference numerals are assigned to the parts corresponding to the parts described above, and the description thereof is omitted.

図１５（Ａ）、（Ｂ）、および図１６を参照するに、磁気メモリ装置１００は、例えばマトリクス状に配列された複数のメモリセル１０１からなる。メモリセル１０１は、大略して磁気抵抗効果（ＧＭＲ）膜３０とＭＯＳ型電界効果トランジスタ（ＦＥＴ）１０２からなる。なお、ＭＯＳ型ＦＥＴは、ｐチャネルＭＯＳ型ＦＥＴあるいはｎチャネルＭＯＳ型ＦＥＴを用いることができるが、ここでは、電子がキャリアとなるｎチャネルＭＯＳ型ＦＥＴを例として説明する。ＭＯＳ型ＦＥＴ１０２は、シリコン基板１０３中に形成されたｐ型不純物を含むｐウェル領域１０４と、ｐウェル領域１０４中のシリコン基板１０３の表面の近傍に互いに離隔してｎ型不純物が導入された不純物拡散領域１０５ａ、１０５ｂを有する。ここで、一方の不純物拡散領域１０５ａをソースＳ、他方の不純物拡散領域１０５ｂをドレインＤとする。ＭＯＳ型ＦＥＴ１０２は、２つの不純物拡散領域１０５ａ、１０５ｂの間のシリコン基板１０３の表面にゲート絶縁膜１０６を介してゲート電極Ｇが設けられている。   Referring to FIGS. 15A, 15B, and 16, the magnetic memory device 100 includes a plurality of memory cells 101 arranged in a matrix, for example. The memory cell 101 is roughly composed of a magnetoresistive effect (GMR) film 30 and a MOS field effect transistor (FET) 102. Note that a p-channel MOS type FET or an n-channel MOS type FET can be used as the MOS type FET. Here, an n-channel MOS type FET in which electrons are carriers will be described as an example. The MOS FET 102 is an impurity in which an n-type impurity is introduced in the vicinity of the surface of the silicon substrate 103 in the p-well region 104 and the p-well region 104 containing the p-type impurity formed in the silicon substrate 103. Diffusion regions 105a and 105b are provided. Here, one impurity diffusion region 105a is a source S, and the other impurity diffusion region 105b is a drain D. In the MOS type FET 102, a gate electrode G is provided on the surface of the silicon substrate 103 between the two impurity diffusion regions 105a and 105b via a gate insulating film 106.

ＭＯＳ型ＦＥＴ１０２のソースＳは、垂直配線１１４および層内配線１１５を介してＧＭＲ膜３０の一方の側、例えば下地層３１に電気的に接続される。また、ドレインＤには垂直配線１１４を介してプレート線１０８が電気的に接続される。ゲート電極Ｇには読出用ワード線１０９に電気的に接続される。なお、ゲート電極Ｇが読出用ワード線１０９を兼ねてもよい。また、ビット線１０１は、ＧＭＲ膜３０の他方の側、例えば保護膜３９に電気的に接続される。ＧＭＲ膜３０の下側には離隔して書込用ワード線１１１が設けられている。ＧＭＲ膜３０は、先に図２に示したＧＭＲ膜３０と同様の構成を有するＧＭＲ膜３０は、自由磁化層３８の磁化容易軸の方向を図１5（Ａ）に示すＸ軸方向に沿って設定し、磁化困難軸の方向をＹ方向に沿って設定する。磁化容易軸の方向は、熱処理により形成してもよく、形状異方性により形成してもよい。形状異方性によりＸ軸方向に磁化容易軸を形成する場合は、ＧＭＲ膜３０の膜面に平行な断面形状（Ｘ−Ｙ平面に平行な断面形状）をＹ方向の辺よりもＸ方向の辺が長い矩形とする。   The source S of the MOS type FET 102 is electrically connected to one side of the GMR film 30, for example, the base layer 31 through the vertical wiring 114 and the intralayer wiring 115. Further, the plate line 108 is electrically connected to the drain D through the vertical wiring 114. The gate electrode G is electrically connected to the read word line 109. Note that the gate electrode G may also serve as the read word line 109. The bit line 101 is electrically connected to the other side of the GMR film 30, for example, the protective film 39. A write word line 111 is provided below the GMR film 30 at a distance. The GMR film 30 has the same configuration as that of the GMR film 30 shown in FIG. 2. In the GMR film 30, the direction of the easy axis of the free magnetic layer 38 is along the X-axis direction shown in FIG. And the direction of the hard axis is set along the Y direction. The direction of the easy axis of magnetization may be formed by heat treatment or by shape anisotropy. When the easy magnetization axis is formed in the X-axis direction due to the shape anisotropy, the cross-sectional shape parallel to the film surface of the GMR film 30 (the cross-sectional shape parallel to the XY plane) is set in the X direction rather than the side in the Y direction. A rectangle with a long side.

なお、磁気メモリ装置１００は、シリコン基板１０３の表面やゲート電極Ｇがシリコン窒化膜やシリコン酸化膜等の層間絶縁膜１１３に覆われている。また、ＧＭＲ膜３０、プレート線１０８、読出用ワード線１０９、ビット線１１０、書込用ワード線１１１、垂直配線１１４、および層内配線１１５は、上記で説明した電気的な接続以外は層間絶縁膜１１３により互いに電気的に絶縁されている。     In the magnetic memory device 100, the surface of the silicon substrate 103 and the gate electrode G are covered with an interlayer insulating film 113 such as a silicon nitride film or a silicon oxide film. In addition, the GMR film 30, the plate line 108, the read word line 109, the bit line 110, the write word line 111, the vertical wiring 114, and the intra-layer wiring 115 are interlayer insulating except for the electrical connection described above. The film 113 is electrically insulated from each other.

磁気メモリ装置１００は、ＧＭＲ膜３０に情報を保持する。情報は、第２固定磁化層３６の磁化の方向に対して、自由磁化層３８の磁化の方向が平行あるいは反平行の状態であるかにより保持される。   The magnetic memory device 100 holds information in the GMR film 30. Information is held depending on whether the magnetization direction of the free magnetic layer 38 is parallel or antiparallel to the magnetization direction of the second pinned magnetic layer 36.

次に、磁気メモリ装置１００の書込みおよび読出し動作を説明する。
磁気メモリ装置１００のＧＭＲ膜３０への情報の書込み動作は、ＧＭＲ膜３０の上下に配置されたビット線１１０と書込用ワード線１１１により行われる。ビット線１１０はＧＭＲ膜３０の上方をＸ方向に延在しており、ビット線１１０に電流を流すことにより、ＧＭＲ膜３０にＹ方向に印加される。また、書込用ワード線１１１はＧＭＲ膜３０の下方をＹ方向に延在しており、書込用ワード線１１１に電流を流すことにより、ＧＭＲ膜３０にＸ方向に磁界が印加される。ＧＭＲ膜３０の自由磁化層３８の磁化は、実質的に磁界が印加されない場合はＸ方向（例えばＸ2方向とする。）を向いており、その磁化方向は安定である。 Next, write and read operations of the magnetic memory device 100 will be described.
The information write operation to the GMR film 30 of the magnetic memory device 100 is performed by the bit line 110 and the write word line 111 arranged above and below the GMR film 30. The bit line 110 extends in the X direction above the GMR film 30, and is applied to the GMR film 30 in the Y direction by passing a current through the bit line 110. The write word line 111 extends below the GMR film 30 in the Y direction, and a magnetic field is applied to the GMR film 30 in the X direction by passing a current through the write word line 111. The magnetization of the free magnetic layer 38 of the GMR film 30 is in the X direction (for example, the X2 direction) when a magnetic field is not substantially applied, and the magnetization direction is stable.

情報をＧＭＲ膜３０に書込む際はビット線１１０と書込用ワード線１１１に同時に電流を流す。例えば、自由磁化層３８の磁化をＸ1方向に向ける場合は、書込用ワード線１１１に流す電流をＹ1方向に流す。これにより、ＧＭＲ膜３０において磁界がＸ1方向となる。この際、ビット線１１０に流す電流の方向は、Ｘ1方向およびＸ2方向のいずれでもよい。ビット線１１０に流す電流による生じる磁界は、ＧＭＲ膜３０においてＹ1方向またはＹ2方向になり、自由磁化層３８の磁化が磁化困難軸の障壁を越えるための磁界の一部として機能する。すなわち、自由磁化層３８の磁化にＸ1方向の磁界と、Ｙ1方向またはＹ2方向とが同時に印加されることで、Ｘ2方向を向いていた自由磁化層３８の磁化は、Ｘ1方向に反転する。そして磁界を取り去った後も自由磁化層３８の磁化はＸ1方向を向いており、次の書込み動作の磁界あるいは消去用の磁界が印加されない限りは安定である。   When writing information to the GMR film 30, a current is simultaneously applied to the bit line 110 and the write word line 111. For example, when the magnetization of the free magnetic layer 38 is directed in the X1 direction, a current flowing through the write word line 111 is passed in the Y1 direction. As a result, the magnetic field in the GMR film 30 is in the X1 direction. At this time, the direction of the current flowing through the bit line 110 may be either the X1 direction or the X2 direction. The magnetic field generated by the current flowing through the bit line 110 is in the Y1 direction or the Y2 direction in the GMR film 30, and functions as part of the magnetic field for the magnetization of the free magnetic layer 38 to cross the barrier of the hard axis. That is, when the magnetic field in the X1 direction and the Y1 direction or the Y2 direction are simultaneously applied to the magnetization of the free magnetic layer 38, the magnetization of the free magnetic layer 38 facing the X2 direction is reversed in the X1 direction. Even after the magnetic field is removed, the magnetization of the free magnetic layer 38 is oriented in the X1 direction, and is stable unless a magnetic field for the next write operation or a magnetic field for erasure is applied.

このようにして、ＧＭＲ膜３０には自由磁化層３８の磁化の方向に応じて、「１」あるいは「０」を記録できる。   In this way, “1” or “0” can be recorded in the GMR film 30 depending on the magnetization direction of the free magnetic layer 38.

例えば、第２固定磁化層３６の磁化の方向がＸ1方向の場合に、自由磁化層３８の磁化方向がＸ1方向（トンネル抵抗値が低い状態）のときは「１」、Ｘ2方向（トンネル抵抗値が高い状態）のときは「０」に設定する。なお、書込み動作の際にビット線１１０および書込用ワード線１１１に供給される電流の大きさは、ビット線１１０あるいは書込用ワード線１１１のいずれか一方のみに電流が流れても自由磁化層３８の磁化の反転が生じない程度に設定される。これにより、電流を供給したビット線１１０と電流を供給した書込用ワード線１１１との交点にあるＧＭＲ膜３０の自由磁化層３８の磁化のみに記録が行われる。なお、書込み動作の際にビット線１１０に電流を流した際に、ＧＭＲ膜３０には電流が流れないように、ソースＳ側がハイピーダンスに設定される。   For example, when the magnetization direction of the second pinned magnetic layer 36 is the X1 direction and the magnetization direction of the free magnetic layer 38 is the X1 direction (the tunnel resistance value is low), “1”, the X2 direction (tunnel resistance value) Is set to “0”. Note that the magnitude of the current supplied to the bit line 110 and the write word line 111 during the write operation is such that the free magnetization is applied even if the current flows only in either the bit line 110 or the write word line 111. It is set to such an extent that the magnetization reversal of the layer 38 does not occur. As a result, recording is performed only on the magnetization of the free magnetic layer 38 of the GMR film 30 at the intersection of the bit line 110 supplied with current and the write word line 111 supplied with current. Note that the source S side is set to high impedance so that no current flows through the GMR film 30 when a current is passed through the bit line 110 during the write operation.

次に、磁気メモリ装置１００のＧＭＲ膜３０への情報の読出し動作は、ビット線１１０にソースＳに対して負電圧を印加し、読出用ワード線１０９、すなわちゲート電極ＧにＭＯＳ型ＦＥＴ１０２の閾値電圧よりも大きな電圧（正電圧）を印加して行う。これによりＭＯＳ型ＦＥＴ１０２はオンとなり、電子がビット線１１０から、ＧＭＲ膜３０、ソースＳ、およびドレインＤを介してプレート線１０８に流れる。プレート線１０８に電流計等の電流値検出器１１８を電気的に接続することで、第２固定磁化層３６の磁化の方向に対する自由磁化層３８の磁化の方向に対応する磁気抵抗値を検出する。これにより、ＧＭＲ膜３０が保持する「１」あるいは「０」の情報を読出すことができる。   Next, in the information read operation to the GMR film 30 of the magnetic memory device 100, a negative voltage is applied to the bit line 110 with respect to the source S, and the threshold value of the MOS FET 102 is applied to the read word line 109, that is, the gate electrode G. This is performed by applying a voltage (positive voltage) larger than the voltage. As a result, the MOS FET 102 is turned on, and electrons flow from the bit line 110 to the plate line 108 via the GMR film 30, the source S, and the drain D. By electrically connecting a current value detector 118 such as an ammeter to the plate line 108, a magnetoresistance value corresponding to the magnetization direction of the free magnetic layer 38 relative to the magnetization direction of the second pinned magnetic layer 36 is detected. . Thereby, “1” or “0” information held by the GMR film 30 can be read.

第４の実施の形態に係る第１例の磁気メモリ装置１００は、ＧＭＲ膜３０の自由磁化層３８が前記ＣｏＦｅＭｇ合金膜からなるので、磁気抵抗変化量ΔＲＡが大きい。したがって、磁気メモリ装置１００は、情報の読出しの際に、保持された"０"および "１"に対応する磁気抵抗値の差が大きいので、正確な読出しができる。なお、磁気メモリ装置１００を構成するＧＭＲ膜３０は、図３〜図６に示す第２例〜第５例のＧＭＲ膜４０，５０，６０，６５のいずれかに置換してもよい。   In the magnetic memory device 100 of the first example according to the fourth embodiment, since the free magnetic layer 38 of the GMR film 30 is made of the CoFeMg alloy film, the magnetoresistance change ΔRA is large. Therefore, the magnetic memory device 100 can read data accurately because there is a large difference in magnetoresistive values corresponding to the stored “0” and “1” when reading information. The GMR film 30 constituting the magnetic memory device 100 may be replaced with any of the GMR films 40, 50, 60, and 65 of the second to fifth examples shown in FIGS.

図１７は、第１例の磁気メモリ装置の変形例を構成するＴＭＲ膜の構成図である。   FIG. 17 is a configuration diagram of a TMR film constituting a modification of the magnetic memory device of the first example.

図１７を図１５（Ａ）と共に参照するに、磁気メモリ装置１００を構成するＧＭＲ膜３０の代わりにＴＭＲ膜７０を用いてもよい。ＴＭＲ膜７０は、第２の実施の形態に係る磁気抵抗効果素子を構成する第１例のＴＭＲ膜と同様の構成を有する。ＴＭＲ膜７０は、例えば、下地層３１が層内配線１１５に接触し、保護膜３９がビット線１１０に接触している。また、自由磁化層３８の磁化容易軸は上述したＧＭＲ膜３０と同様に配置される。ＴＭＲ膜７０を用いた場合の磁気メモリ装置１００の書込み動作および読出し動作はＧＭＲ膜と同様であるのでその説明を省略する。   Referring to FIG. 17 together with FIG. 15A, a TMR film 70 may be used instead of the GMR film 30 constituting the magnetic memory device 100. The TMR film 70 has the same configuration as the TMR film of the first example that constitutes the magnetoresistive element according to the second embodiment. In the TMR film 70, for example, the base layer 31 is in contact with the in-layer wiring 115 and the protective film 39 is in contact with the bit line 110. Further, the easy axis of the free magnetic layer 38 is arranged in the same manner as the GMR film 30 described above. Since the write operation and read operation of the magnetic memory device 100 using the TMR film 70 are the same as those of the GMR film, the description thereof is omitted.

ＴＭＲ膜７０は、第２の実施の形態において説明したようにトンネル抵抗効果を示す。ＴＭＲ膜７０は、自由磁化層３８がＣｏＦｅＭｇからなるので、トンネル抵抗変化量が大きい。したがって、磁気メモリ装置１００は、情報の読出しの際に、保持された"０"および "１"に対応するトンネル抵抗変化量が大きいので、正確な読出しができる。なお、磁気メモリ装置を構成するＴＭＲ膜は、図11〜図13に示す第２例〜第４例のＴＭＲ膜を用いてもよい。   The TMR film 70 exhibits a tunnel resistance effect as described in the second embodiment. The TMR film 70 has a large amount of tunnel resistance change because the free magnetic layer 38 is made of CoFeMg. Therefore, the magnetic memory device 100 can read data accurately because the amount of change in tunnel resistance corresponding to the stored “0” and “1” is large when reading information. Note that the TMR films of the second to fourth examples shown in FIGS. 11 to 13 may be used as the TMR films constituting the magnetic memory device.

図１８は、第４の実施の形態に係る第２例の磁気メモリ装置の断面図である。図中、先に説明した部分に対応する部分には同一の参照符号を付し、説明を省略する。   FIG. 18 is a cross-sectional view of the magnetic memory device of the second example according to the fourth embodiment. In the figure, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

図１８を参照するに、磁気メモリ装置１２０は、ＧＭＲ膜３０に情報を書込むための機構が第１例の磁気メモリ装置と異なる。   Referring to FIG. 18, the magnetic memory device 120 is different from the magnetic memory device of the first example in the mechanism for writing information to the GMR film 30.

磁気メモリ装置１２０のメモリセルは、書込用ワード線１１１が設けられていない以外は、図１５（Ａ）および（Ｂ）に示すメモリセル１０１と同様の構成を有する。以下、図１５（Ｂ）を図１８とあわせて参照しつつ説明する。   The memory cell of the magnetic memory device 120 has the same configuration as the memory cell 101 shown in FIGS. 15A and 15B, except that the write word line 111 is not provided. Hereinafter, description will be made with reference to FIG.

磁気メモリ装置１２０は、書込み動作が第１例の磁気メモリ装置と異なっている。磁気メモリ装置１２０は、偏極スピン電流ＩｗをＧＭＲ膜３０に注入し、その電流の向きによって、自由磁化層３８の磁化の向きを第２固定磁化層３６の磁化の向きに対して平行の状態から反平行の状態に、あるいは反平行の状態から平行の状態に反転させる。偏極スピン電流Ｉｗは、電子が取り得る２つのスピンの向きの一方の向きの電子からなる電子流である。偏極スピン電流Ｉｗの向きをＧＭＲ膜３０のＺ1方向あるいはＺ2方向に流すことで、自由磁化層の磁化にトルクを発生させ、いわゆるスピン注入磁化反転を起こさせる。偏極スピン電流Ｉｗの電流量は、自由磁化層３８の膜厚に応じて適宜選択されるが数ｍＡ〜２０ｍＡ程度である。偏極スピン電流Ｉｗの電流量は、図15（Ａ）の第１例の磁気メモリ装置の書き込み動作の際にビット線１１０および書込用ワード線１１１に流す電流量より
も少なく、消費電力を低減できる。 The magnetic memory device 120 is different from the magnetic memory device of the first example in writing operation. The magnetic memory device 120 injects a polarized spin current Iw into the GMR film 30, and the magnetization direction of the free magnetic layer 38 is parallel to the magnetization direction of the second pinned magnetic layer 36 depending on the direction of the current. From anti-parallel to anti-parallel or from anti-parallel to parallel. The polarized spin current Iw is an electron flow composed of electrons in one of two spin directions that can be taken by electrons. By causing the direction of the polarized spin current Iw to flow in the Z1 direction or the Z2 direction of the GMR film 30, torque is generated in the magnetization of the free magnetic layer, and so-called spin injection magnetization reversal is caused. The amount of the polarized spin current Iw is appropriately selected according to the film thickness of the free magnetic layer 38, but is about several mA to 20 mA. The amount of current of the polarized spin current Iw is smaller than the amount of current flowing through the bit line 110 and the write word line 111 during the write operation of the magnetic memory device of the first example of FIG. Can be reduced.

なお、偏極スピン電流は、ＧＭＲ膜３０と略同様の構成を有するＣｕ膜を２つの強磁性層で挟んだ積層体に垂直に電流を流すことで生成することができる。電子のスピンの向きは２つの強磁性層の磁化の向きを平行あるいは反平行に設定することで制御できる。なお、磁気メモリ装置１２０の読み取り動作は図１５（Ａ）の第１例の磁気メモリ装置１００と同様である。   The polarized spin current can be generated by passing a current vertically through a stacked body in which a Cu film having a configuration substantially similar to that of the GMR film 30 is sandwiched between two ferromagnetic layers. The direction of electron spin can be controlled by setting the magnetization directions of the two ferromagnetic layers to be parallel or antiparallel. The reading operation of the magnetic memory device 120 is the same as that of the magnetic memory device 100 of the first example in FIG.

第２例の磁気メモリ装置１２０は、第１例の磁気メモリ装置と同様の効果を有する。さらに、第２例の磁気メモリ装置１２０は、第１例の磁気メモリ装置よりも低消費電力化が可能である。なお、磁気メモリ装置１２０は、ＧＭＲ膜３０の代わりに、図３〜図６に示す第２例〜第５例のＧＭＲ膜４０，５０，６０，６５のいずれかに置換してもよく、あるいは、図9〜図１3に示す第１例〜第４例のＴＭＲ膜に置換してもよい。また、第４の実施の形態の第１例および第２例の磁気メモリ装置では、ＭＯＳ型ＦＥＴにより書込み動作および読出し動作の際の電流方向を制御していたが、他の公知の手段により電流方向の制御を行ってもよい。
以上本発明の好ましい実施の形態について詳述したが、本発明は係る特定の実施の形態に限定されるものではなく、特許請求の範囲に記載された本発明の範囲内において、種々の変形・変更が可能である。例えば、第３の実施の形態では、磁気記録媒体がディスク状の場合を例に説明したが、本発明は、磁気記録媒体がテープ状である磁気テープ装置でも適用できることはいうまでもない。また、磁気抵抗効果素子と記録素子とを備える磁気ヘッドを一例として説明したが、磁気抵抗効果素子のみを備える磁気ヘッドでもよい。さらに、複数の磁気抵抗効果素子が配置された磁気ヘッドでもよい。 The magnetic memory device 120 of the second example has the same effect as the magnetic memory device of the first example. Furthermore, the magnetic memory device 120 of the second example can reduce power consumption compared with the magnetic memory device of the first example. The magnetic memory device 120 may be replaced with any of the GMR films 40, 50, 60, 65 of the second to fifth examples shown in FIGS. 3 to 6 instead of the GMR film 30, or The TMR films of the first to fourth examples shown in FIGS. 9 to 13 may be substituted. In the magnetic memory devices of the first example and the second example of the fourth embodiment, the current direction during the write operation and the read operation is controlled by the MOS type FET. Direction control may be performed.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the present invention described in the claims. It can be changed. For example, in the third embodiment, the case where the magnetic recording medium is disk-shaped has been described as an example. However, it is needless to say that the present invention can also be applied to a magnetic tape device in which the magnetic recording medium is tape-shaped. Further, the magnetic head including the magnetoresistive effect element and the recording element has been described as an example, but a magnetic head including only the magnetoresistive effect element may be used. Furthermore, a magnetic head in which a plurality of magnetoresistive elements are arranged may be used.

以上、本発明を好ましい実施形態について説明したが、本発明はかかる特定の実施形態に限定されるものではなく、特許請求の範囲に記載した要旨内において様々な変形・変更が可能である。
（付記１）
固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを備えたＣＰＰ型磁気抵抗効果素子であって、前記自由磁化層と前記固定磁化層の少なくとも一方は、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含むＣｏＦｅＭｇ合金膜で構成され、当該ＣｏＦｅＭｇ合金膜は、（ＣｏｘＦｅ100-ｘ）Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成範囲の組成を有する磁気抵抗効果素子。
（付記２）
前記自由磁化層を挟んで前記固定磁化層と反対側に配置される対称配置の固定磁化層と、前記自由磁化層と前記対称配置の固定磁化層との間に挿入される第２の非磁性層とをさらに有し、前記自由磁化層、前記固定磁化層、および前記対称配置の固定磁化層の少なくとも１つの層が、前記組成範囲内の組成を有するＣｏＦｅＭｇ合金膜で構成される付記１記載の磁気抵抗効果素子。
（付記３）
前記自由層及び／又は固定磁化層と非磁性層との間の界面に拡散防止層として軟磁性材料であるＣｏＦｅ合金膜、ＮｉＦｅ合金膜、あるいはＣｏＦｅＡｌ合金膜を積層した付記１または２記載の磁気抵抗効果素子。
（付記４）
固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される絶縁層とを備えるＣＰＰ型磁気抵抗効果素子であって、前記自由磁化層と、前記固定磁化層の少なくとも一方は、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含むＣｏＦｅＭｇ合金膜で構成され、当該ＣｏＦｅＭｇ合金膜は、（ＣｏｘＦｅ（100−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有する磁気抵抗効果素子。
（付記５）
前記自由層及び／又は固定磁化層と絶縁層との間の界面に拡散防止層として軟磁性材料であるＣｏＦｅ合金膜、ＮｉＦｅ合金膜、あるいはＣｏＦｅＡｌ合金膜を積層した付記４記載の磁気抵抗効果素子。
（付記６）
前記界面拡散防止層の膜厚が０．２〜３ｎｍである付記３または５記載の磁気抵抗効果素子。
（付記７）
前記ＣｏＦｅＭｇ合金膜は、さらにＡｌ、Ｇｅ，Ｓｂ，Ｃｕのうちの少なくとも一つを含む付記１〜６のうち、いずれか一項記載の磁気抵抗効果素子。
（付記８）
前記ＣｏＦｅＭｇ合金膜は、Ｃｏ，Ｆｅ，Ｍｇの合金よりなる付記１〜７のうち、いずれか一項記載の磁気抵抗効果素子。
（付記９）
前記ＣｏＦｅＭｇ合金膜は、Ｃｏ層とＦｅ層とＭｇ層の積層構造を有する付記１〜７のうち、いずれか一項記載の磁気抵抗効果素子。
（付記１０）
付記１〜９のうち、いずれか一項記載の磁気抵抗効果素子を有する磁気ヘッドと、磁気記録媒体とを備える磁気記憶装置。
（付記１１）
固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを有するＣＰＰ型の磁気抵抗効果膜で構成される記憶素子と、ビット線とワード線に電流を流して電流磁界によって磁場印加することにより、又は磁気抵抗効果膜にスピン偏極電流を流して前記自由磁化層の磁化を所定の方向に配列させる書き込み手段と、前記磁気抵抗効果膜にセンス電流を供給して抵抗値を検出する読み出し手段と、を備え、前記自由磁化層と固定磁化層の少なくとも一方がＣｏ及び／又はＦｅを構成成分として含みＭｇをさらに含み（ＣｏｘＦｅ（１００−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有するＣｏＦｅＭｇ合金膜よりなることを特徴とする磁気メモリ装置。 As mentioned above, although this invention was described about preferable embodiment, this invention is not limited to this specific embodiment, A various deformation | transformation and change are possible within the summary described in the claim.
(Appendix 1)
A CPP-type magnetoresistive effect element comprising a fixed magnetic layer, a free magnetic layer, and a nonmagnetic layer inserted between the fixed magnetic layer and the free magnetic layer, wherein the free magnetic layer and the fixed magnetic layer At least one of them is composed of a CoFeMg alloy film containing Co and / or Fe as a constituent component and further containing Mg, and the CoFeMg alloy film is (Co x Fe 100-x ) M g y (where 0 ≦ x ≦ 100 , 0 <y <30 at%).
(Appendix 2)
A symmetric arrangement of the fixed magnetization layer disposed on the opposite side of the fixed magnetization layer with the free magnetization layer interposed therebetween, and a second non-magnetism inserted between the free magnetization layer and the symmetric arrangement of the fixed magnetization layer Supplementary note 1 wherein at least one of the free magnetic layer, the fixed magnetic layer, and the symmetrical fixed magnetic layer is formed of a CoFeMg alloy film having a composition within the composition range. Magnetoresistive effect element.
(Appendix 3)
The magnetic field according to claim 1 or 2, wherein a CoFe alloy film, a NiFe alloy film, or a CoFeAl alloy film, which is a soft magnetic material, is laminated as an anti-diffusion layer at the interface between the free layer and / or the fixed magnetic layer and the nonmagnetic layer. Resistive effect element.
(Appendix 4)
A CPP magnetoresistive element including a fixed magnetic layer, a free magnetic layer, and an insulating layer inserted between the fixed magnetic layer and the free magnetic layer, wherein the free magnetic layer, the fixed magnetic layer, At least one is composed of a CoFeMg alloy film containing Co and / or Fe as a constituent component and further containing Mg, and the CoFeMg alloy film is (Co x Fe (100−x) ) M y (where 0 ≦ x ≦ A magnetoresistive element having a composition of 100, 0 <y <30 at%).
(Appendix 5)
The magnetoresistive element according to claim 4, wherein a CoFe alloy film, a NiFe alloy film, or a CoFeAl alloy film, which is a soft magnetic material, is laminated as an anti-diffusion layer at an interface between the free layer and / or the fixed magnetization layer and the insulating layer. .
(Appendix 6)
The magnetoresistive effect element according to appendix 3 or 5, wherein the interface diffusion preventing layer has a thickness of 0.2 to 3 nm.
(Appendix 7)
The magnetoresistive effect element according to any one of appendices 1 to 6, wherein the CoFeMg alloy film further includes at least one of Al, Ge, Sb, and Cu.
(Appendix 8)
The magnetoresistive effect element according to any one of appendices 1 to 7, wherein the CoFeMg alloy film is made of an alloy of Co, Fe, and Mg.
(Appendix 9)
The said CoFeMg alloy film is a magnetoresistive effect element as described in any one of the additional remarks 1-7 which have a laminated structure of Co layer, Fe layer, and Mg layer.
(Appendix 10)
A magnetic storage device comprising: a magnetic head having the magnetoresistive effect element according to any one of appendices 1 to 9; and a magnetic recording medium.
(Appendix 11)
A storage element including a pinned magnetic layer, a free magnetic layer, and a non-magnetic layer inserted between the fixed magnetic layer and the free magnetic layer, a bit line and a word line Current is applied to the magnetoresistive film, or a spin-polarized current is applied to the magnetoresistive film to align the magnetization of the free magnetic layer in a predetermined direction; and Reading means for detecting a resistance value by supplying a sense current, wherein at least one of the free magnetic layer and the fixed magnetic layer further includes Co and / or Fe as a constituent component, and further includes Mg (Co x Fe (100 -x)) Mg y (magnetic memory device characterized by consisting CoFeMg alloy film having a composition of wherein 0 ≦ x ≦ 100,0 <y < 30at%).

本発明の第１の実施の形態に係る磁気ヘッドの媒体対向面の要部を示す図である。FIG. 3 is a diagram illustrating a main part of a medium facing surface of the magnetic head according to the first embodiment of the invention. 第１の実施の形態に係る磁気抵抗効果素子を構成する第１例のＧＭＲ膜の断面図である。It is sectional drawing of the GMR film | membrane of the 1st example which comprises the magnetoresistive effect element based on 1st Embodiment. 第１の実施の形態に係る磁気抵抗効果素子を構成する第２例のＧＭＲ膜の断面図である。It is sectional drawing of the GMR film | membrane of the 2nd example which comprises the magnetoresistive effect element based on 1st Embodiment. 第１の実施の形態に係る磁気抵抗効果素子を構成する第３例のＧＭＲ膜の断面図である。It is sectional drawing of the GMR film | membrane of the 3rd example which comprises the magnetoresistive effect element based on 1st Embodiment. 第１の実施の形態に係る磁気抵抗効果素子を構成する第４例のＧＭＲ膜の断面図である。It is sectional drawing of the GMR film | membrane of the 4th example which comprises the magnetoresistive effect element based on 1st Embodiment. 第１の実施の形態に係る磁気抵抗効果素子を構成する第５例のＧＭＲ膜の断面図である。It is sectional drawing of the GMR film | membrane of the 5th example which comprises the magnetoresistive effect element which concerns on 1st Embodiment. 実施例１の自由磁化層の組成と、ΔＲＡを示す図である。It is a figure which shows the composition of the free magnetic layer of Example 1, and (DELTA) RA. 自由磁化層のＣｏＦｅＭｇ合金組成とΔＲＡ、Ｈｃｆとの関係を表す図。The figure showing the relationship between CoFeMg alloy composition of a free magnetic layer, (DELTA) RA, and Hcf. 本発明の第２の実施の形態に係る磁気抵抗効果素子を構成する第１例のＴＭＲ膜の断面図である。It is sectional drawing of the TMR film | membrane of the 1st example which comprises the magnetoresistive effect element which concerns on the 2nd Embodiment of this invention. 第２の実施の形態に係る磁気抵抗効果素子を構成する第２例のＴＭＲ膜の断面図である。It is sectional drawing of the TMR film | membrane of the 2nd example which comprises the magnetoresistive effect element which concerns on 2nd Embodiment. 第２の実施の形態に係る磁気抵抗効果素子を構成する第３例のＴＭＲ膜の断面図である。It is sectional drawing of the TMR film | membrane of the 3rd example which comprises the magnetoresistive effect element which concerns on 2nd Embodiment. 第２の実施の形態に係る磁気抵抗効果素子を構成する第４例のＴＭＲ膜の断面図である。It is sectional drawing of the TMR film | membrane of the 4th example which comprises the magnetoresistive effect element which concerns on 2nd Embodiment. 第２の実施の形態に係る磁気抵抗効果素子を構成する第５例のＴＭＲ膜の断面図である。It is sectional drawing of the TMR film | membrane of the 5th example which comprises the magnetoresistive effect element which concerns on 2nd Embodiment. 本発明の第３の実施の形態に係る磁気記憶装置の要部を示す平面図である。It is a top view which shows the principal part of the magnetic memory device based on the 3rd Embodiment of this invention. （Ａ）は本発明の第４の実施の形態に係る第１例の磁気メモリ装置の断面図、（Ｂ）は（Ａ）に示すＧＭＲ膜の構成図である。(A) is sectional drawing of the magnetic memory device of the 1st example which concerns on the 4th Embodiment of this invention, (B) is a block diagram of the GMR film | membrane shown to (A). 第１例の磁気メモリ装置の一つのメモリセルの等価回路図である。It is an equivalent circuit diagram of one memory cell of the magnetic memory device of the first example. 第１例の磁気メモリ装置の変形例を構成するＴＭＲ膜の構成図である。It is a block diagram of the TMR film | membrane which comprises the modification of the magnetic memory device of a 1st example. 第４の実施の形態に係る第２例の磁気メモリ装置の断面図である。It is sectional drawing of the magnetic memory device of the 2nd example which concerns on 4th Embodiment.

符号の説明Explanation of symbols

１０，９８ 磁気ヘッド
１１ セラミック基板
１２，２５ アルミナ膜
１３ 誘導型記録素子
１４ 上部磁極
１５ 記録ギャップ層
１６ 下部磁極
２０ 磁気抵抗効果素子
２１ 下部電極
２２ 上部電極
２３ 絶縁膜
２４ 磁区制御膜
３０，４０，５０，６０，６５ 磁気抵抗効果（ＧＭＲ）膜
３１ 下地層
３２ 反強磁性層（下部反強磁性層）
３３ 固定磁化積層体（下部固定磁化積層体）
３４ 第１固定磁化層（下部第１固定磁化層）
３５ 非磁性結合層（下部非磁性結合層）
３６ 第２固定磁化層（下部第２固定磁化層）
３７ 非磁性金属層（下部非磁性金属層）
３７ａ 非磁性絶縁層（下部非磁性絶縁層）
３８ 自由磁化層
３９ 保護層
４２ 上部反強磁性層
４３，６２，６７ 上部固定磁化積層体
４４ 上部第１固定磁化層
４５ 上部非磁性結合層
４６ 上部第２固定磁化層
４７ 上部非磁性金属層
４７ａ 上部非磁性絶縁層
５１ 自由磁化積層体
５２ 第１界面磁性層
５３ 第２界面磁性層
６１，６６ 下部固定磁化積層体
６３ 第３界面磁性層
６４ 第４界面磁性層
６８ 第１強磁性接合層
６９ 第２強磁性接合層
７０〜７４ トンネル磁気抵抗効果（ＴＭＲ）膜
９０ 磁気記憶装置
１００，１２０ 磁気メモリ装置 DESCRIPTION OF SYMBOLS 10,98 Magnetic head 11 Ceramic substrate 12, 25 Alumina film 13 Inductive recording element 14 Upper magnetic pole 15 Recording gap layer 16 Lower magnetic pole 20 Magnetoresistive element 21 Lower electrode 22 Upper electrode 23 Insulating film 24 Magnetic domain control film 30, 40, 50, 60, 65 Magnetoresistive (GMR) film 31 Underlayer 32 Antiferromagnetic layer (lower antiferromagnetic layer)
33 Fixed magnetization stack (lower fixed magnetization stack)
34. First fixed magnetic layer (lower first fixed magnetic layer)
35 Nonmagnetic coupling layer (lower nonmagnetic coupling layer)
36 Second pinned magnetic layer (lower second pinned magnetic layer)
37 Nonmagnetic metal layer (lower nonmagnetic metal layer)
37a Nonmagnetic insulating layer (lower nonmagnetic insulating layer)
38 free magnetic layer 39 protective layer 42 upper antiferromagnetic layer 43, 62, 67 upper fixed magnetization stack 44 upper first fixed magnetic layer 45 upper nonmagnetic coupling layer 46 upper second fixed magnetic layer 47 upper nonmagnetic metal layer 47a Upper nonmagnetic insulating layer 51 Free magnetization stack 52 First interface magnetic layer 53 Second interface magnetic layer 61, 66 Lower fixed magnetization stack 63 Third interface magnetic layer 64 Fourth interface magnetic layer 68 First ferromagnetic junction layer 69 Second ferromagnetic junction layer 70 to 74 Tunnel magnetoresistive effect (TMR) film 90 Magnetic storage device 100, 120 Magnetic memory device

Claims (7)

固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを備えたＣＰＰ型磁気抵抗効果素子であって、前記自由磁化層と前記固定磁化層の少なくとも一方は、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含むＣｏＦｅＭｇ合金膜で構成され、当該ＣｏＦｅＭｇ合金膜は、（ＣｏｘＦｅ100-ｘ）Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成範囲の組成を有する磁気抵抗効果素子。 A CPP-type magnetoresistive effect element comprising a fixed magnetic layer, a free magnetic layer, and a nonmagnetic layer inserted between the fixed magnetic layer and the free magnetic layer, wherein the free magnetic layer and the fixed magnetic layer At least one of them is composed of a CoFeMg alloy film containing Co and / or Fe as a constituent component and further containing Mg, and the CoFeMg alloy film is (Co x Fe 100-x ) M g y (where 0 ≦ x ≦ 100 , 0 <y <30 at%). 前記自由磁化層を挟んで前記固定磁化層と反対側に配置される対称配置の固定磁化層と、前記自由磁化層と前記対称配置の固定磁化層との間に挿入される第２の非磁性層とをさらに有し、前記自由磁化層、前記固定磁化層、および前記対称配置の固定磁化層の少なくとも１つの層が、前記組成範囲内の組成を有するＣｏＦｅＭｇ合金膜で構成される請求項１に記載の磁気抵抗効果素子。   A symmetric arrangement of the fixed magnetization layer disposed on the opposite side of the fixed magnetization layer with the free magnetization layer interposed therebetween, and a second non-magnetism inserted between the free magnetization layer and the symmetric arrangement of the fixed magnetization layer The at least one of the free magnetic layer, the fixed magnetic layer, and the symmetrically arranged fixed magnetic layer is formed of a CoFeMg alloy film having a composition within the composition range. 2. A magnetoresistive element described in 1. 前記自由層及び／又は固定磁化層と非磁性層との間の界面に拡散防止層として軟磁性材料であるＣｏＦｅ合金膜、ＮｉＦｅ合金膜、あるいはＣｏＦｅＡｌ合金膜を積層した請求項２記載の磁気抵抗効果素子。   The magnetoresistive film according to claim 2, wherein a CoFe alloy film, a NiFe alloy film, or a CoFeAl alloy film, which is a soft magnetic material, is laminated as a diffusion prevention layer at an interface between the free layer and / or the fixed magnetic layer and the nonmagnetic layer. Effect element. 固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される絶縁層とを備えるＣＰＰ型磁気抵抗効果素子であって、前記自由磁化層と、前記固定磁化層の少なくとも一方は、Ｃｏ及び／又はＦｅを構成成分として含みＭｇをさらに含むＣｏＦｅＭｇ合金膜で構成され、当該ＣｏＦｅＭｇ合金膜は、（ＣｏｘＦｅ（100−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有する磁気抵抗効果素子。 A CPP magnetoresistive element including a fixed magnetic layer, a free magnetic layer, and an insulating layer inserted between the fixed magnetic layer and the free magnetic layer, wherein the free magnetic layer, the fixed magnetic layer, At least one is composed of a CoFeMg alloy film containing Co and / or Fe as a constituent component and further containing Mg, and the CoFeMg alloy film is (Co x Fe (100−x) ) M y (where 0 ≦ x ≦ A magnetoresistive element having a composition of 100, 0 <y <30 at%). 請前記自由層及び／又は固定磁化層と絶縁層との間の界面に拡散防止層として軟磁性材料であるＣｏＦｅ合金膜、ＮｉＦｅ合金膜、あるいはＣｏＦｅＡｌ合金膜を積層した請求項４記載の磁気抵抗効果素子。   5. The magnetoresistance according to claim 4, wherein a CoFe alloy film, a NiFe alloy film, or a CoFeAl alloy film, which is a soft magnetic material, is laminated as an anti-diffusion layer at an interface between the free layer and / or the fixed magnetization layer and the insulating layer. Effect element. 請求項１〜５のうち、いずれか一項記載の磁気抵抗効果素子を有する磁気ヘッドと、磁気記録媒体とを備える磁気記憶装置。   A magnetic storage device comprising: a magnetic head having the magnetoresistive effect element according to claim 1; and a magnetic recording medium. 固定磁化層と、自由磁化層と、前記固定磁化層と自由磁化層の間に挿入される非磁性層とを有するＣＰＰ型の磁気抵抗効果膜で構成される記憶素子と、ビット線とワード線に電流を流して電流磁界によって磁場印加することにより、又は磁気抵抗効果膜にスピン偏極電流を流して前記自由磁化層の磁化を所定の方向に配列させる書き込み手段と、前記磁気抵抗効果膜にセンス電流を供給して抵抗値を検出する読み出し手段と、を備え、前記自由磁化層と固定磁化層の少なくとも一方がＣｏ及び／又はＦｅを構成成分として含みＭｇをさらに含み（ＣｏｘＦｅ（１００−ｘ））Ｍｇｙ（ここで０≦ｘ≦１００，０<ｙ<３０ａｔ％）の組成を有するＣｏＦｅＭｇ合金膜よりなることを特徴とする磁気メモリ装置。 A storage element including a pinned magnetic layer, a free magnetic layer, and a non-magnetic layer inserted between the fixed magnetic layer and the free magnetic layer, a bit line and a word line Current is applied to the magnetoresistive film, or a spin-polarized current is applied to the magnetoresistive film to align the magnetization of the free magnetic layer in a predetermined direction; and Reading means for detecting a resistance value by supplying a sense current, wherein at least one of the free magnetic layer and the fixed magnetic layer further includes Co and / or Fe as a constituent component, and further includes Mg (Co x Fe (100 -x)) Mg y (magnetic memory device characterized by consisting CoFeMg alloy film having a composition of wherein 0 ≦ x ≦ 100,0 <y < 30at%).
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012104825A (en) * 2010-11-05 2012-05-31 Grandis Inc Method and system for providing hybrid magnetic tunneling junction element with improved switching
CN108831741A (en) * 2018-06-15 2018-11-16 北京科技大学 Increase the method for feeromagnetic metal/oxide bi-layer film interface magnetic anisotropy energy energy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012104825A (en) * 2010-11-05 2012-05-31 Grandis Inc Method and system for providing hybrid magnetic tunneling junction element with improved switching
CN108831741A (en) * 2018-06-15 2018-11-16 北京科技大学 Increase the method for feeromagnetic metal/oxide bi-layer film interface magnetic anisotropy energy energy

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