JP2009021530A - Insulating resin film and power module - Google Patents

Insulating resin film and power module Download PDF

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JP2009021530A
JP2009021530A JP2007185016A JP2007185016A JP2009021530A JP 2009021530 A JP2009021530 A JP 2009021530A JP 2007185016 A JP2007185016 A JP 2007185016A JP 2007185016 A JP2007185016 A JP 2007185016A JP 2009021530 A JP2009021530 A JP 2009021530A
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adhesive
resin film
adhesive layer
insulating resin
filler
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Takuji Kozu
卓司 神頭
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a filler structure that is suitable for being mixed in an adhesive at a high filling factor, and provide an adhesive layer using the same and a power module. <P>SOLUTION: A power module 10 is provided with a semiconductor chip 11, a heat sink 21, a metal wiring 23, an insulating resin film 26 provided between the metal wiring 23 and the heat sink 21, and a solder layer 14. The insulating resin film 26 has a first adhesive layer 26a formed by mixing a filler F in the adhesive E, and a second adhesive layer 26b provided on the upper and lower surfaces of the first adhesive layer 26a and substantially comprising only an adhesive. By the second adhesive layer 26b, the adhesive strength between the first adhesive layer 26a with the comparatively low adhesive strength due to the filler F and the adherend surface is enhanced. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、無機絶縁性材料からなるフィラーを混入した絶縁性樹脂膜およびパワーモジュールに関する。   The present invention relates to an insulating resin film and a power module mixed with a filler made of an inorganic insulating material.

図１０は、従来のＩＧＢＴチップを搭載したパワーモジュールの構造を示す断面図である。同図に示すように、ＣｕＭｏ等により構成されている放熱基板１０１の主面側には、放熱基板１０１に、半田層１０２により固定されたＡｌ板１０４と、Ａｌ板１０４の主面にＡｌろうによって固定されたＡｌＮ板１０６と、ＡｌＮ板１０６の主面にＡｌろうによって固定されたＡｌ配線１０８と、Ａｌ配線１０８の上に、半田層１０９により固定された半導体チップ１２０とを備えている。また、放熱基板１０１の裏面側には、グリース１１２によりフィン付きのヒートシンク１１３が取り付けられている。上記Ａｌ板１０４，ＡｌＮ板１０６およびＡｌ配線１０８は、ＤＢＡ基板として一体的に用いられている。   FIG. 10 is a cross-sectional view showing the structure of a power module on which a conventional IGBT chip is mounted. As shown in the figure, on the main surface side of the heat radiating substrate 101 made of CuMo or the like, an Al plate 104 fixed to the heat radiating substrate 101 by a solder layer 102 and an Al solder on the main surface of the Al plate 104. The AlN plate 106 fixed by the above, the Al wiring 108 fixed to the main surface of the AlN plate 106 by Al solder, and the semiconductor chip 120 fixed by the solder layer 109 on the Al wiring 108 are provided. Further, a heat sink 113 with fins is attached to the rear surface side of the heat dissipation substrate 101 with grease 112. The Al plate 104, AlN plate 106, and Al wiring 108 are integrally used as a DBA substrate.

このように、Ａｌ板１０４，ＡｌＮ板１０６およびＡｌ配線１０８をＤＢＡ基板（絶縁層を含む配線部材）として用いたパワーモジュールの構造は、たとえば、特許文献１に記載されている（同文献の図５参照）。同図には、チップ直下の半田層（同図の符号１２２）には、液相点が３００℃〜３３０℃の高融点半田（Ｓｎ−90%Ｐｂ）を用い、下方の半田層（同図の符号１２５）には、液相点が２１６℃程度の低融点半田（Ｓｎ−50%Ｐｂ）を用いている例が開示されている。なお、本明細書においては、組成割合を表す「％」は、重量％を示すものとする。
特開２００１−１６８２５６号公報 As described above, the structure of a power module using the Al plate 104, the AlN plate 106, and the Al wiring 108 as a DBA substrate (wiring member including an insulating layer) is described in, for example, Patent Document 1 (FIG. 1). 5). In the figure, a high melting point solder (Sn-90% Pb) having a liquidus point of 300 ° C. to 330 ° C. is used for a solder layer (reference numeral 122 in the figure) immediately below the chip, and a lower solder layer (same figure). 125) discloses an example in which a low melting point solder (Sn-50% Pb) having a liquidus point of about 216 ° C. is used. In the present specification, “%” representing the composition ratio represents weight%.
JP 2001-168256 A

上記図１０に開示される構造では、互いに融点が異なる２つの半田層１０２，１０９が設けられている。一般に、コストの上昇を回避したい場合には、できるだけ高融点のろう材（たとえば、特許文献１に記載されているような，融点が６００℃程度のＡｌ−11%Ｓｉ−2%Ｍｇ）の使用を避けて、リフロー炉を利用できる半田を用いる。そこで、図１０に示す下方の半田層１０２には、たとえば特許文献１における低融点半田（Ｓｎ−50%Ｐｂ）や、液相点が１８３℃程度の共晶半田（Ｓｎ−37%Ｐｂ）を用い、上方の半田層１０９には、たとえば液相点が３００℃〜３３０℃の高融点半田（Ｓｎ−90%Ｐｂなど）を用いるのが一般的である。すなわち、先の半田付け工程では高融点半田を用い、後の半田付け工程では、先の工程で形成された半田層がリフロー炉内で融解しないように、低融点半田を用いるのである。   In the structure disclosed in FIG. 10, two solder layers 102 and 109 having different melting points are provided. Generally, when it is desired to avoid an increase in cost, the use of a solder having a melting point as high as possible (for example, Al-11% Si-2% Mg having a melting point of about 600 ° C. as described in Patent Document 1) Use solder that can use a reflow oven. Therefore, for example, low melting point solder (Sn-50% Pb) in Patent Document 1 or eutectic solder (Sn-37% Pb) having a liquidus point of about 183 ° C. is used for the lower solder layer 102 shown in FIG. As the upper solder layer 109, for example, a high melting point solder (Sn-90% Pb or the like) having a liquidus point of 300 ° C. to 330 ° C. is generally used. That is, high melting point solder is used in the previous soldering process, and low melting point solder is used in the subsequent soldering process so that the solder layer formed in the previous process does not melt in the reflow furnace.

しかしながら、上記従来のパワーモジュールのように、２つの半田層を設けると、半田材料のコストと、２回のリフロー工程を行うことによる製造コストとによって、パワーモジュールのコストが多大となる。   However, when two solder layers are provided as in the above-described conventional power module, the cost of the power module increases due to the cost of the solder material and the manufacturing cost of performing the reflow process twice.

そこで、一方の半田層に代えて、接着剤を用いることが考えられる。その場合、熱抵抗を小さく維持するためには、熱伝導率の高いフィラーを接着剤に混入する必要があるが、フィラーを高充填率で接着剤に混入すると、接着強度が低下して、剥がれなどを生じるおそれがある。   Thus, it is conceivable to use an adhesive instead of one solder layer. In that case, in order to keep the thermal resistance small, it is necessary to mix a filler with high thermal conductivity into the adhesive. However, if the filler is mixed into the adhesive at a high filling rate, the adhesive strength is lowered and peeling occurs. This may cause

本発明の目的は、フィラーを高充填率で接着剤に混入した接着剤層を備えつつ接着強度の高い絶縁性樹脂膜、およびこれを用いたパワーモジュールを提供することにある。   An object of the present invention is to provide an insulating resin film having high adhesive strength while including an adhesive layer in which a filler is mixed in an adhesive at a high filling rate, and a power module using the same.

本発明の絶縁性樹脂膜は、無機絶縁性材料からなるフィラーおよび接着剤を含む第１の接着剤層と、実質的に接着剤のみからなる第２の接着剤層とを積層したものである。
ここで、「実質的に接着剤のみによって構成されている」とは、接着剤としての機能に必要な各種添加物や粘度調整のためのフィラーは含んでいてもよいが、熱伝導率向上のためのフィラーは含まないことを意味する。 The insulating resin film of the present invention is obtained by laminating a first adhesive layer containing a filler and an adhesive made of an inorganic insulating material, and a second adhesive layer consisting essentially of an adhesive. .
Here, “substantially composed only of an adhesive” may include various additives necessary for the function as an adhesive and fillers for viscosity adjustment. Means no filler.

これにより、第１の接着剤層の表面にフィラーが露出しても、第１の接着剤層と被接着面との間に第２の接着剤層が介在するので、接着強度が維持されて、剥がれなどの発生を抑制することができる。   As a result, even if the filler is exposed on the surface of the first adhesive layer, the second adhesive layer is interposed between the first adhesive layer and the adherend surface, so that the adhesive strength is maintained. The occurrence of peeling or the like can be suppressed.

第１の接着剤層が、固体シート状に形成されていることにより、各種機器中の接着剤層を形成するために便利な接着剤シートが得られる。また、第１の接着剤層中に気泡が存在している場合には、熱抵抗の増大を招くおそれがあるが、接着剤シートの状態で気泡の有無を予め検査しておくことにより、熱抵抗の増大を招く接着剤シートの使用を回避することができる。   By forming the first adhesive layer in the form of a solid sheet, an adhesive sheet convenient for forming the adhesive layer in various devices can be obtained. In addition, when air bubbles are present in the first adhesive layer, there is a risk of increasing the thermal resistance. However, by inspecting the presence or absence of air bubbles in the state of the adhesive sheet in advance, The use of an adhesive sheet that causes an increase in resistance can be avoided.

本発明のパワーモジュールは、半導体チップ用の配線部材と支持基材との間に、本発明の絶縁性樹脂膜を介在させたものである。   The power module of the present invention is obtained by interposing the insulating resin film of the present invention between a wiring member for a semiconductor chip and a support base material.

これにより、半田層に代えて絶縁性樹脂膜を利用することで、半田層を形成する工程が低減される。したがって、製造コストの削減を図りつつ、接着剤層中のフィラーの充填率を高め、放熱性能の高いパワーモジュールを得ることができる。   Thereby, the process of forming a solder layer is reduced by using an insulating resin film instead of the solder layer. Therefore, it is possible to obtain a power module with high heat dissipation performance by increasing the filling rate of the filler in the adhesive layer while reducing the manufacturing cost.

特に、支持部材が、フィンを有するヒートシンク部材であることにより、構造が簡素化されてコストの低減を図ることができるとともに、半導体チップから熱交換媒体に至る経路の熱抵抗が小さくなるので、放熱性能がより高くなる。   In particular, since the support member is a heat sink member having fins, the structure can be simplified and the cost can be reduced, and the thermal resistance of the path from the semiconductor chip to the heat exchange medium is reduced, so that heat is dissipated. Higher performance.

本発明の絶縁性樹脂膜によると、無機絶縁性材料からなるフィラーの充填率を高めつつ、被接着面との接着強度を維持することができ、この絶縁性樹脂膜を用いたパワーモジュールにより、放熱性能の向上を図ることができる。   According to the insulating resin film of the present invention, it is possible to maintain the adhesive strength with the adherend surface while increasing the filling rate of the filler made of the inorganic insulating material, and the power module using this insulating resin film, The heat dissipation performance can be improved.

−パワーモジュールの構造−
図１は、実施の形態に係るパワーモジュールセットの構造を示す斜視図である。同図に示すように、本実施形態のパワーモジュールセットは、放熱器５０の上に、複数のパワーモジュール１０を取り付けて構成されている。放熱器５０は、天板５０ａと天板５０ａに接合された容器５０ｂとからなり、天板５０ａには、パワーモジュール１０を組み込むための多数の矩形状貫通穴が設けられている。本実施形態においては、矩形状貫通穴が多数設けられているが、１つだけでもよい。放熱器５０を構成する天板５０ａと容器５０ｂとは、アルミニウムまたはアルミニウム合金からなり、ダイキャスト，押し出し，鍛造，鋳造，機械加工等によって組み立てることができる。 -Power module structure-
FIG. 1 is a perspective view showing a structure of a power module set according to the embodiment. As shown in the figure, the power module set of the present embodiment is configured by attaching a plurality of power modules 10 on a radiator 50. The radiator 50 includes a top plate 50a and a container 50b joined to the top plate 50a. The top plate 50a is provided with a number of rectangular through holes for incorporating the power module 10 therein. In the present embodiment, a large number of rectangular through holes are provided, but only one may be provided. The top plate 50a and the container 50b constituting the radiator 50 are made of aluminum or an aluminum alloy, and can be assembled by die casting, extrusion, forging, casting, machining, or the like.

本実施の形態では、放熱器５０は天板５０ａと容器５０ｂとを個別に形成してから両者を接合しているが、天板と容器とを一体に形成してもよい。その場合、たとえば一体型を用いたダイキャストにより放熱器を形成することができる。   In the present embodiment, the radiator 50 is formed by individually forming the top plate 50a and the container 50b and then joining the two. However, the top plate and the container may be integrally formed. In that case, the radiator can be formed, for example, by die casting using an integral type.

図２は、実施の形態に係るパワーモジュールセットのII-II線における断面図である。ただし、図２において配線構造の図示は省略されている。図３は、図２の一部を拡大して示す断面図である。図２および図３に示すように、本実施の形態のパワーモジュールセットにおいて、放熱器５０の天板５０ａと容器５０ｂとの間の空間５１には、熱交換媒体としての冷却水が図２の紙面に直交する方向に流れている。パワーモジュール１０は、Ｏリング２５により気密を保持しつつボルト５４により天板５０ａにネジ止めされている。また、パワーモジュール１０は、主要部材として、ＩＧＢＴなどの半導体素子が形成された半導体チップ１１と、半導体チップ１１内の半導体素子と外部部材とを電気的に接続するための金属配線２３と、金属配線２３と半導体チップ１１とを接合する，Ｐｂフリー半田を含む半田層１４と、半導体チップ１１で発生した熱を外方に放出するためのヒートシンク２１と、金属配線２３をヒートシンク２１に固着する絶縁性樹脂膜２６とを備えている。図３に示すように、半導体チップ１１の上面および下面には、それぞれ、ＩＧＢＴなどの半導体素子の活性領域に接続される上面電極１２および裏面電極１３が設けられている。そして、半導体チップ１１の裏面電極１３が、半田層１４によって、金属配線２３に導通状態で接合されている。   FIG. 2 is a cross-sectional view taken along line II-II of the power module set according to the embodiment. However, the illustration of the wiring structure is omitted in FIG. FIG. 3 is an enlarged cross-sectional view of a part of FIG. As shown in FIGS. 2 and 3, in the power module set of the present embodiment, cooling water as a heat exchange medium is shown in FIG. 2 in the space 51 between the top plate 50a and the container 50b of the radiator 50. It flows in the direction perpendicular to the paper surface. The power module 10 is screwed to the top plate 50 a by bolts 54 while being kept airtight by the O-ring 25. The power module 10 includes, as main members, a semiconductor chip 11 on which a semiconductor element such as an IGBT is formed, a metal wiring 23 for electrically connecting the semiconductor element in the semiconductor chip 11 and an external member, a metal A solder layer 14 containing Pb-free solder for joining the wiring 23 and the semiconductor chip 11, a heat sink 21 for releasing heat generated in the semiconductor chip 11 to the outside, and an insulation for fixing the metal wiring 23 to the heat sink 21. The resin film 26 is provided. As shown in FIG. 3, an upper surface electrode 12 and a back surface electrode 13 connected to an active region of a semiconductor element such as an IGBT are provided on the upper surface and the lower surface of the semiconductor chip 11, respectively. The back electrode 13 of the semiconductor chip 11 is joined to the metal wiring 23 in a conductive state by the solder layer 14.

ヒートシンク２１は、平板部２１ａと、平板部２１ａの裏面側から突出するフィン部２１ｂとからなり、平板部２１ａは、金属配線２３を支持する支持部材として機能している。そして、フィン部２１ｂは、熱交換媒体である冷却水にさらされて、熱交換効率を高めるように構成されている。ただし、フィン部２１ｂは必ずしも必要ではなく、また、フィン部２１ｂに代えて、他の放熱構造体を備えていてもよい。   The heat sink 21 includes a flat plate portion 21 a and fin portions 21 b protruding from the back surface side of the flat plate portion 21 a, and the flat plate portion 21 a functions as a support member that supports the metal wiring 23. And the fin part 21b is exposed to the cooling water which is a heat exchange medium, and is comprised so that heat exchange efficiency may be improved. However, the fin part 21b is not necessarily required, and may be provided with another heat dissipation structure instead of the fin part 21b.

また、放熱器５０の天板５０ａ上に、半導体チップ１１等を囲むモジュール樹脂枠５３が設けられていて、モジュール樹脂枠５３がボルト５４によって天板５０ａに固定されている。モジュール樹脂枠５３の内部および外表面には電極端子層５６が形成されている。この電極端子層５６と金属配線２３とは、大電流用配線１８によって接続されており、電極端子層５６と半導体チップ１１の上面電極１２の一部とは、信号配線１７によって接続されている。これによって、パワーモジュール１０と外部機器との電気的な接続が可能になっている。また、モジュール樹脂枠５３の内方には、シリコンゲルからなるゲル層４０が設けられていて、ヒートシンク２１の上面側で半導体チップ１１，信号配線１７，大電流用配線１８，金属配線２３，半田層１４，絶縁性樹脂膜２６などの部材がゲル層４０内に埋設されている。   A module resin frame 53 surrounding the semiconductor chip 11 and the like is provided on the top plate 50 a of the radiator 50, and the module resin frame 53 is fixed to the top plate 50 a by bolts 54. Electrode terminal layers 56 are formed on the inner and outer surfaces of the module resin frame 53. The electrode terminal layer 56 and the metal wiring 23 are connected by a large current wiring 18, and the electrode terminal layer 56 and a part of the upper surface electrode 12 of the semiconductor chip 11 are connected by a signal wiring 17. As a result, the power module 10 and the external device can be electrically connected. Further, a gel layer 40 made of silicon gel is provided on the inner side of the module resin frame 53, and the semiconductor chip 11, the signal wiring 17, the high current wiring 18, the metal wiring 23, the solder on the upper surface side of the heat sink 21. Members such as the layer 14 and the insulating resin film 26 are embedded in the gel layer 40.

ここで、図３の拡大部分に示すように、絶縁性樹脂膜２６は、第１の接着剤層２６ａと、第１の接着剤層２６ａの上面および下面の上に形成された第２の接着剤層２６ｂとを備えている。第１の接着剤層２６ａは、接着剤Ｅに無機絶縁性材料からなるフィラーＦを混入して構成され、厚みが１００〜２００μｍである。一方、第２の接着剤層２６ｂは、実質的に接着剤のみによって構成され、厚みは１０μｍ程度である。「実質的に接着剤のみによって構成されている」とは、接着剤としての機能に必要な各種添加物や粘度調整のためのフィラーは含んでいてもよいが、熱伝導率向上のためのフィラーは含まないことを意味する。   Here, as shown in the enlarged portion of FIG. 3, the insulating resin film 26 includes a first adhesive layer 26a and a second adhesive formed on the upper and lower surfaces of the first adhesive layer 26a. And an agent layer 26b. The first adhesive layer 26a is configured by mixing the filler F made of an inorganic insulating material into the adhesive E, and has a thickness of 100 to 200 μm. On the other hand, the 2nd adhesive bond layer 26b is substantially comprised only with the adhesive agent, and thickness is about 10 micrometers. “Substantially composed only of an adhesive” may contain various additives necessary for the function as an adhesive and a filler for viscosity adjustment, but a filler for improving thermal conductivity. Means not included.

第１の接着剤層２６ａ中のフィラーＦの材質は、高硬度の無機絶縁性材料であって、たとえばＡｌＮ，ＳｉＣ，Ａｌ２Ｏ３，ＢＮ，窒化珪素，ダイヤモンドなどが好ましい。高硬度の無機絶縁性材料は、熱伝導率が高いので、第１の接着剤層２６ａの熱抵抗、ひいては絶縁性樹脂膜２６全体の熱抵抗を小さくすることができる。たとえばＡｌＮの熱伝導率は約２００（Ｗ／ｍ・Ｋ）であり、ＳｉＣの熱伝導率は約２００〜５００（Ｗ／ｍ・Ｋ）であり、Ａｌ２Ｏ３の熱伝導率は約１７（Ｗ／ｍ・Ｋ）であり、ＢＮの熱伝導率は約６０〜２００（Ｗ／ｍ・Ｋ）であり、窒化珪素の熱伝導率は約８０（Ｗ／ｍ・Ｋ）であり、ダイヤモンドの熱伝導率は最大２０００（Ｗ／ｍ・Ｋ）である。 The material of the filler F in the first adhesive layer 26a is a high-hardness inorganic insulating material, and for example, AlN, SiC, Al 2 O 3 , BN, silicon nitride, diamond and the like are preferable. Since the high-hardness inorganic insulating material has high thermal conductivity, the thermal resistance of the first adhesive layer 26a, and hence the thermal resistance of the entire insulating resin film 26, can be reduced. For example, the thermal conductivity of AlN is about 200 (W / m · K), the thermal conductivity of SiC is about 200 to 500 (W / m · K), and the thermal conductivity of Al 2 O 3 is about 17 (W / m · K), the thermal conductivity of BN is about 60 to 200 (W / m · K), the thermal conductivity of silicon nitride is about 80 (W / m · K), diamond The maximum thermal conductivity is 2000 (W / m · K).

一方、絶縁性樹脂膜２６中の接着剤Eには、エポキシ樹脂が用いられているが、エポキシ樹脂以外の熱硬化性接着剤や熱可塑性接着剤を用いることができる。   On the other hand, an epoxy resin is used for the adhesive E in the insulating resin film 26, but a thermosetting adhesive or a thermoplastic adhesive other than the epoxy resin can be used.

フィラーＦを混入した第１の接着剤層２６ａの表面には、ところどころにフィラーＦの一部が露出している。フィラーＦの充填率が高い場合には、露出場所の割合も高い。したがって、第１の接着剤層２６ａだけを、ヒートシンク２１と金属配線２３との間に介在させた場合、ヒートシンク２１および金属配線２３との界面において、フィラーＦの露出部分から剥がれが進行するおそれがある。それに対し、本実施の形態では、第１の接着剤層２６ａの上面および下面の上に、第２の接着剤層２６ｂが設けられているので、絶縁性樹脂膜２６と、ヒートシンク２１および金属配線２３との接着強度が高く維持され、剥がれなどのおそれを回避することができる。   On the surface of the first adhesive layer 26a mixed with the filler F, a part of the filler F is exposed in some places. When the filling rate of the filler F is high, the ratio of exposed locations is also high. Therefore, when only the first adhesive layer 26 a is interposed between the heat sink 21 and the metal wiring 23, there is a possibility that peeling will proceed from the exposed portion of the filler F at the interface between the heat sink 21 and the metal wiring 23. is there. In contrast, in the present embodiment, since the second adhesive layer 26b is provided on the upper and lower surfaces of the first adhesive layer 26a, the insulating resin film 26, the heat sink 21, and the metal wiring are provided. The adhesive strength with 23 is maintained high, and the possibility of peeling or the like can be avoided.

絶縁性樹脂膜２６全体の厚みは、０．４ｍｍ以下であることが好ましく、０．１ｍｍ〜０．２５ｍｍであることがより好ましい。絶縁性樹脂膜２６の熱抵抗は、熱伝導率と厚みに依存して定まるが、厚みが薄いほど熱抵抗が小さくなる。したがって、厚みが０．４ｍｍ以下であることにより、放熱性能が高くなることになる。   The total thickness of the insulating resin film 26 is preferably 0.4 mm or less, and more preferably 0.1 mm to 0.25 mm. The thermal resistance of the insulating resin film 26 is determined depending on the thermal conductivity and thickness, but the thermal resistance decreases as the thickness decreases. Therefore, heat dissipation performance will become high because thickness is 0.4 mm or less.

（変形例）
次に、実施の形態の変形例について説明する。本変形例においても、パワーモジュールセットの構成は、図１及び図２に示す構成と同じであって、絶縁性樹脂膜２６の構造だけが異なる。図４は、変形例に係る図２の一部を拡大して示す断面図である。ここで、図４の拡大部分に示すように、絶縁性樹脂膜２６は、接着剤Ｅに充填剤を混入して構成されている。充填剤は、大径表面コートフィラーＣＦ１と、小径表面コートフィラーＣＦ２とに区分けされている。同図に示すように、各表面コートフィラーＣＦ１，ＣＦ２は、無機絶縁性材料からなるフィラーＦと、フィラーＦの表面を覆う樹脂皮膜Ｌとからなり、全体の外形が実質的に球面体である。「実質的に球面体である」とは、製造工程などにおいて生じうる，真球面からの誤差を有するものは、球面体とする意味である。なお、１つの表面コートフィラーＣＦ１，ＣＦ２中に複数のフィラーＦが含まれていてもよい。 (Modification)
Next, a modification of the embodiment will be described. Also in this modification, the configuration of the power module set is the same as the configuration shown in FIGS. 1 and 2, and only the structure of the insulating resin film 26 is different. 4 is an enlarged cross-sectional view of a part of FIG. 2 according to the modification. Here, as shown in the enlarged portion of FIG. 4, the insulating resin film 26 is configured by mixing a filler in the adhesive E. The filler is divided into a large diameter surface coat filler CF1 and a small diameter surface coat filler CF2. As shown in the figure, each of the surface coat fillers CF1 and CF2 includes a filler F made of an inorganic insulating material and a resin film L covering the surface of the filler F, and the entire outer shape is substantially a spherical body. . The phrase “substantially spherical body” means that a spherical body is an object having an error from a true spherical surface that may occur in a manufacturing process or the like. A plurality of fillers F may be contained in one surface coat filler CF1, CF2.

そして、絶縁性樹脂膜２６内において、大径表面コートフィラーＣＦ１同士の間隙に小径表面コートフィラーＣＦ２が入り込んでいる。本実施の形態においては、大径表面コートフィラーＣＦ１の径（最大部）は、所定範囲（３０〜６０μｍ）内にあり、小径表面コートフィラーＣＦ２の径は、大径表面コートフィラーＣＦ１の径の約０．２倍程度（６〜１２μｍ）である。たとえば、大径表面コートフィラーＣＦ１の径が４０±１０μｍであり、小径表面コートフィラーＣＦ２の径が、８±３μｍである。また、小径表面コートフィラーＣＦ２よりもさらに径の小さい微細表面コートフィラー（図示せず）を加えることにより、大径表面コートフィラーＣＦ１と小径表面コートフィラーＣＦ２との間隙に微細表面コートフィラーを入り込ませて、フィラーの充填率をさらに向上させることができる。   In the insulating resin film 26, the small-diameter surface coat filler CF2 enters the gap between the large-diameter surface coat fillers CF1. In the present embodiment, the diameter (maximum part) of the large-diameter surface coat filler CF1 is within a predetermined range (30 to 60 μm), and the small-diameter surface coat filler CF2 has a diameter equal to that of the large-diameter surface coat filler CF1. It is about 0.2 times (6 to 12 μm). For example, the large-diameter surface coat filler CF1 has a diameter of 40 ± 10 μm, and the small-diameter surface coat filler CF2 has a diameter of 8 ± 3 μm. Further, by adding a fine surface coat filler (not shown) having a diameter smaller than that of the small diameter surface coat filler CF2, the fine surface coat filler enters the gap between the large diameter surface coat filler CF1 and the small diameter surface coat filler CF2. Thus, the filler filling rate can be further improved.

以上のような整列状態は、たとえば、稠密六方構造や面心立方構造などの単結晶構造に類似した積み重ね状態である。そして、充填剤を混入した接着剤をスクリーン印刷などによって、塗布する際に圧力を印加することによって、各表面コートフィラーＣＦ１，ＣＦ２が最小の体積を占めるように移動する結果、実現される。ただし、部分的な整列状態の乱れはあっても、全体としての充填率がそれほど低下するわけではないので、ここにいう整列状態に含まれる。   The aligned state as described above is a stacked state similar to a single crystal structure such as a dense hexagonal structure or a face-centered cubic structure. Then, by applying pressure when applying the adhesive mixed with the filler by screen printing or the like, the surface coat fillers CF1 and CF2 move so as to occupy the minimum volume, which is realized. However, even if there is a partial disturbance in the alignment state, the filling rate as a whole does not decrease so much, so it is included in this alignment state.

特に、高硬度の無機絶縁性材料は、現実的な製造コストを維持しうる加工では、表面を滑らかにして球状に近づけることが困難で、表面が細かな凹凸を有している。そのため、フィラーを高充填率（たとえば６０〜７０％）で混入した接着剤は、極めて高粘度状態になって、上記実施の形態に示す第１の接着剤層２６ａをスクリーン印刷などで塗布することが困難である。   In particular, a high-hardness inorganic insulating material has a rough surface with fine irregularities because it is difficult to make the surface smooth and close to a sphere by processing that can maintain realistic manufacturing costs. Therefore, the adhesive mixed with the filler at a high filling rate (for example, 60 to 70%) is in a very high viscosity state, and the first adhesive layer 26a shown in the above embodiment is applied by screen printing or the like. Is difficult.

それに対し、本変形例の表面コートフィラーＣＦ１，ＣＦ２は、表面の凹凸の大きいフィラーＦであっても、その表面を樹脂被膜Ｌで被覆して、全体の外形を実質的に球面体にしているので、表面コートフィラーＣＦ１，ＣＦ２を混入しても、接着剤の粘度上昇を抑制することができる。その結果、本発明の表面コートフィラーＣＦ１，ＣＦ２を混入した接着剤を、スクリーン印刷などで、塗布することが可能になる。   On the other hand, the surface coat fillers CF1 and CF2 of this modified example have a substantially spherical surface as a whole by covering the surface with the resin coating L even if the filler F has large irregularities on the surface. Therefore, even if the surface coat fillers CF1 and CF2 are mixed, an increase in the viscosity of the adhesive can be suppressed. As a result, the adhesive mixed with the surface coat fillers CF1 and CF2 of the present invention can be applied by screen printing or the like.

ただし、表面コートフィラーＣＦ１，ＣＦ２の外形は必ずしも球状である必要はない。表面コートフィラーＣＦ１，ＣＦ２の外形が曲面体であれば、スクリーン印刷などが可能な程度に粘度を小さく抑えることはできる。特に、表面の任意の部分が凸であれば（言い換えると、曲率半径が正の値であれば）、接着剤の中で表面コートフィラーＣＦ１，ＣＦ２がスムーズに移動可能であるので、接着剤の粘度低減という本発明の効果を確実に発揮することができる。曲面体の例としては、球面体以外に、ラグビーボールのような２軸方向で径が異なる楕円体、３軸方向で径が異なる楕円体、多面体の表面を滑らかにしたもの、などがある。   However, the outer shape of the surface coat fillers CF1 and CF2 is not necessarily spherical. If the outer shape of the surface coat fillers CF1 and CF2 is a curved body, the viscosity can be suppressed to a level that allows screen printing and the like. In particular, if any part of the surface is convex (in other words, if the radius of curvature is a positive value), the surface coat fillers CF1 and CF2 can move smoothly in the adhesive. The effect of the present invention of reducing the viscosity can be surely exhibited. Examples of the curved body include a spherical body, an ellipsoid having a different diameter in two axes, such as a rugby ball, an ellipsoid having a diameter different in three axes, and a smooth surface of a polyhedron.

本変形例では、大径表面コートフィラーＣＦ１の径が所定範囲に収まっているので、大径表面コートフィラーＣＦ１が整列することで、フィラーの充填率を高めることができる。さらに、小径表面コートフィラーＣＦ２が大径表面コートフィラーＣＦ１の間隙に入り込む寸法に収まっていることで、より充填率を高めることができる。   In the present modification, the diameter of the large-diameter surface coat filler CF1 is within a predetermined range. Therefore, the filler filling rate can be increased by aligning the large-diameter surface coat filler CF1. Furthermore, since the small diameter surface coat filler CF2 is accommodated in the size of entering the gap between the large diameter surface coat filler CF1, the filling rate can be further increased.

ただし、表面コートフィラーＣＦの径がランダムに分布していても、表面コートフィラーＣＦの外形が任意の部分で凸状の曲面体であれば、表面コートフィラーＣＦが接着剤層中で自由に移動できるので、接着剤層をスクリーン印刷などによって塗布する際に、接着剤層に加わる圧力によって、各表面コートフィラーＣＦが最小の体積を占めるように移動する結果、一定の充填率の向上効果を発揮することができる。   However, even if the diameter of the surface coat filler CF is randomly distributed, the surface coat filler CF moves freely in the adhesive layer if the outer shape of the surface coat filler CF is a convex curved surface at an arbitrary portion. As a result, when applying the adhesive layer by screen printing, etc., the pressure applied to the adhesive layer moves so that each surface coat filler CF occupies the smallest volume, and as a result, a certain filling rate is improved. can do.

本変形例の表面コートフィラーＣＦ１，ＣＦ２の樹脂被膜Ｌは、エポキシ樹脂であり、接着剤に混入される前に、エポキシ樹脂は硬化されている。ただし、エポキシ樹脂を硬化前の熱可塑性状態で接着剤に混入してもよい。また、樹脂皮膜Ｌの材料が、エポキシ樹脂以外の熱硬化型樹脂や熱可塑性樹脂であってもよい。   The resin coating L of the surface coat fillers CF1 and CF2 of this modification is an epoxy resin, and the epoxy resin is cured before being mixed into the adhesive. However, you may mix an epoxy resin in an adhesive agent in the thermoplastic state before hardening. The material of the resin film L may be a thermosetting resin or a thermoplastic resin other than the epoxy resin.

本変形例においても、絶縁性樹脂膜２６中の接着剤Eには、エポキシ樹脂が用いられているが、エポキシ樹脂以外の熱硬化性接着剤や熱可塑性接着剤を用いることができる。   Also in this modification, an epoxy resin is used as the adhesive E in the insulating resin film 26, but a thermosetting adhesive or a thermoplastic adhesive other than the epoxy resin can be used.

−絶縁性樹脂膜の作成方法−
図５（ａ）〜（ｃ）は、絶縁性樹脂膜２６の形成手順の一例を示す断面図である。図５（ａ）に示す工程で、スクリーン印刷等により、下地部材であるヒートシンク２１の上に、厚み１０μｍ程度の第２の接着剤層２６ｂを形成する。 -Method of making insulating resin film-
FIGS. 5A to 5C are cross-sectional views illustrating an example of a procedure for forming the insulating resin film 26. In the step shown in FIG. 5A, a second adhesive layer 26b having a thickness of about 10 μm is formed on the heat sink 21 as a base member by screen printing or the like.

次に、図５（ｂ）に示す工程で、第２の接着剤層２６ｂの上に、厚み１００〜２００μｍの第１の接着剤層２６ａを形成する。このとき、上記実施の形態における第１の接着剤層２６ａの構造（図３参照）の場合は、フィラーＦの充填率が高くなると、粘性の増大によってスクリーン印刷などは困難となる。したがって、たとえば、平板状の型内に接着剤ＥおよびフィラーＦを充填して、固化させて固体シート状の第１の接着剤層２６ａを第２の接着剤層２６ｂの上に貼り付ける方法を採ることができる。また、ポリテトラフルオロエチレン等のフッ素樹脂など、剥離性のよい材料からなる１対の平板間に、接着剤ＥおよびフィラーＦを挟んで硬化させた後、平板を剥離する方法を採ることもできる。   Next, in the step shown in FIG. 5B, a first adhesive layer 26a having a thickness of 100 to 200 μm is formed on the second adhesive layer 26b. At this time, in the case of the structure of the first adhesive layer 26a in the above-described embodiment (see FIG. 3), if the filling rate of the filler F is high, screen printing or the like becomes difficult due to an increase in viscosity. Therefore, for example, a method of filling the first adhesive layer 26a in the form of a solid sheet on the second adhesive layer 26b by filling the adhesive E and the filler F into a flat plate mold and solidifying it. Can be taken. Further, a method of peeling the flat plate after the adhesive E and the filler F are sandwiched between a pair of flat plates made of a material having good peelability, such as a fluororesin such as polytetrafluoroethylene, may be employed. .

このとき、接着剤としてエポキシ樹脂を用いる場合には、貼り付け前に硬化させておいてもよいが、半硬化状態（熱可塑性）にしておいて、表面にシランカップリング剤などの界面活性剤を表面に塗布しておくことが好ましい。表面にシランカップリング剤等を塗布することにより、エポキシ樹脂の表面が粘着性をもつので、取り扱い上の利便性が高まる。   At this time, when an epoxy resin is used as an adhesive, it may be cured before being attached, but it is in a semi-cured state (thermoplastic) and has a surface active agent such as a silane coupling agent on the surface. Is preferably applied to the surface. By applying a silane coupling agent or the like to the surface, the surface of the epoxy resin is sticky, so that convenience in handling is increased.

一方、変形例における第１の接着剤層２６ａの構造（図４参照）の場合は、第１の接着剤層２６ａをスクリーン印刷で塗布することもできるし、予め、固体シート状の第１の接着剤層２６ａ（エポキシシート）を形成しておいて、それを第２の接着剤層２６ｂの上に貼り付けてもよい。予めエポキシシートにしておくことにより、目視によって気泡がないことを確認することができる。気泡が存在すると、絶縁性樹脂膜２６の熱抵抗が増大するおそれがあるが、エポキシシートにしておくことにより、絶縁性樹脂膜２６の熱抵抗が気泡によって増大するのを未然に防止することができる。第２の接着剤層２６ｂについても、同様である。   On the other hand, in the case of the structure of the first adhesive layer 26a in the modification (see FIG. 4), the first adhesive layer 26a can be applied by screen printing, or the solid sheet-like first An adhesive layer 26a (epoxy sheet) may be formed and pasted on the second adhesive layer 26b. By using an epoxy sheet in advance, it can be confirmed visually that there are no bubbles. If bubbles exist, the thermal resistance of the insulating resin film 26 may increase. However, by using an epoxy sheet, it is possible to prevent the thermal resistance of the insulating resin film 26 from increasing due to the bubbles. it can. The same applies to the second adhesive layer 26b.

変形例の場合、表面コートフィラーＣＦ１，ＣＦ２の作製は、フィラーＦを樹脂皮膜Ｌの融液に浸漬した後、取り出して、相対向する平板間で転動させる、などの方法によって行うことができる。転動させる際に、エポキシ樹脂等が硬化していてもよいし、熱可塑性状態であってもよい。熱可塑性状態のものを転動させて球面体にする場合、球面体にしてから硬化させてもよいし、硬化させないままで接着剤に混入してもよい。なお、フィラーＦの径を所定範囲内に収める場合には、メッシュなどで予め粒度を区分けしておく。   In the case of the modification, the surface coat fillers CF1 and CF2 can be produced by a method in which the filler F is immersed in the melt of the resin film L and then taken out and rolled between the opposing flat plates. . When rolling, the epoxy resin or the like may be cured, or may be in a thermoplastic state. In the case where a thermoplastic material is rolled into a spherical body, it may be cured after it is made into a spherical body, or may be mixed in the adhesive without being cured. In addition, when the diameter of the filler F falls within a predetermined range, the particle size is divided in advance with a mesh or the like.

図６は、絶縁性樹脂膜２６の形成方法の他の例を示す断面図である。この方法では、第１の接着剤層２６ａを、１対の第２の接着剤層２６ｂで挟んで固体サンドイッチ構造の絶縁性樹脂膜２６を予め形成しておいて、絶縁性樹脂膜２６をヒートシンク２１の上に貼り付けることになる。ただし、下側の第２の接着剤層２６ｂおよび第１の接着剤層２６ａを固体シート状に形成しておいて、それをヒートシンク２１上に貼り付けた後、さらに上側の第２の接着剤層２６ｂをスクリーン印刷などによって形成してもよい。また、上側の第２の接着剤層２６ｂおよび第１の接着剤層２６ａを固体シート状に形成しておいて、下側の第２の接着剤層２６ｂをスクリーン印刷などによって形成した後、固体シート状の上側の第２の接着剤層２６ｂおよび第１の接着剤層２６ａを、下側の第２の接着剤層２６ｂの上に貼り付けてもよい。   FIG. 6 is a cross-sectional view showing another example of the method for forming the insulating resin film 26. In this method, an insulating resin film 26 having a solid sandwich structure is formed in advance by sandwiching the first adhesive layer 26a between a pair of second adhesive layers 26b, and the insulating resin film 26 is then heat sinked. It will be pasted on 21. However, after the lower second adhesive layer 26b and the first adhesive layer 26a are formed in a solid sheet shape and are attached onto the heat sink 21, the second adhesive layer on the upper side is further formed. The layer 26b may be formed by screen printing or the like. In addition, the upper second adhesive layer 26b and the first adhesive layer 26a are formed in a solid sheet shape, and the lower second adhesive layer 26b is formed by screen printing or the like. The sheet-like upper second adhesive layer 26b and the first adhesive layer 26a may be attached on the lower second adhesive layer 26b.

エポキシ樹脂の場合、固体シート状のものを貼り付けるよりも、液状の接着剤をスクリーン印刷などで塗布した後、硬化させる方が接着強度が高い。したがって、絶縁性樹脂膜２６によって接着される上下の部材のうち、接着強度が低い材料（たとえばＣｕ）に対しては、第２の接着剤層２６ｂをスクリーン印刷などで塗布した後、硬化させる方法が好ましい。   In the case of an epoxy resin, the adhesive strength is higher when a liquid adhesive is applied by screen printing or the like and then cured than when a solid sheet is attached. Therefore, among the upper and lower members bonded by the insulating resin film 26, a method of curing the material having a low adhesive strength (for example, Cu) after applying the second adhesive layer 26b by screen printing or the like. Is preferred.

−絶縁性樹脂膜以外の部材の材質−
本実施の形態および変形例では、半田層１４は、Ｐｂフリー半田を用いて形成されている。一般に、Ｐｂフリー半田には、以下のものがある。たとえば、Ｓｎ（液相点２３２℃），Ｓｎ−3.5%Ａｇ（液相点２２１℃），Ｓｎ−3.0%Ａｇ（液相点２２２℃），Ｓｎ−3.5%Ａｇ−0.55%Ｃｕ（液相点２２０℃），Ｓｎ−3.0%Ａｇ−0.5%Ｃｕ（液相点２２０℃），Ｓｎ−1.5%Ａｇ−0.85%Ｃｕ−2.0Ｂｉ（液相点２２３℃），Ｓｎ−2.5%Ａｇ−0.5%Ｃｕ−1.0Ｂｉ（液相点２１９℃），Ｓｎ−5.8Ｂｉ（液相点１３８℃），Ｓｎ−0.55%Ｃｕ（液相点２２６℃），Ｓｎ−0.55%Ｃｕ−その他（液相点２２６℃），Ｓｎ−0.55%Ｃｕ−0.3%Ａｇ（液相点２２６℃），Ｓｎ−5.0%Ｃｕ（液相点３５８℃），Ｓｎ−3.0%Ｃｕ−0.3%Ａｇ（液相点３１２℃），Ｓｎ−3.5%Ａｇ−0.5%Ｂｉ−3.0Ｉｎ（液相点２１６℃），Ｓｎ−3.5%Ａｇ−0.5%Ｂｉ−4.0Ｉｎ（液相点２１１℃），Ｓｎ−3.5%Ａｇ−0.5%Ｂｉ−8.0Ｉｎ（液相点２０８℃），Ｓｎ−8.0%Ｚｎ−3.0%Ｂｉ（液相点１９７℃）等がある。本実施の形態では、液相点が２５０℃以下の低融点のＰｂフリー半田、たとえば、Ｓｎ−3.0%Ａｇ−0.5%Ｃｕ（液相点２２０℃）を用いているが、これに限定されるものではない。 -Materials of members other than insulating resin film-
In the present embodiment and modifications, the solder layer 14 is formed using Pb-free solder. In general, Pb-free solder includes the following. For example, Sn (liquid phase point 232 ° C.), Sn-3.5% Ag (liquid phase point 221 ° C.), Sn-3.0% Ag (liquid phase point 222 ° C.), Sn-3.5% Ag−0.55% Cu (liquid phase point) 220 ° C.), Sn-3.0% Ag-0.5% Cu (liquid phase point 220 ° C.), Sn-1.5% Ag-0.85% Cu-2.0 Bi (liquid phase point 223 ° C.), Sn-2.5% Ag-0.5% Cu -1.0Bi (liquid phase point 219 ° C), Sn-5.8Bi (liquid phase point 138 ° C), Sn-0.55% Cu (liquid phase point 226 ° C), Sn-0.55% Cu-others (liquid phase point 226 ° C) , Sn-0.55% Cu-0.3% Ag (liquid phase point 226 ° C), Sn-5.0% Cu (liquid phase point 358 ° C), Sn-3.0% Cu-0.3% Ag (liquid phase point 312 ° C), Sn- 3.5% Ag-0.5% Bi-3.0In (liquid phase point 216 ° C), Sn-3.5% Ag-0.5% Bi-4.0In (liquid phase point 211 ° C), Sn-3.5% Ag-0.5% Bi-8.0In (Liquid phase point 208 ° C), Sn-8.0% Zn 3.0% Bi (liquidus point 197 ° C.), and the like. In this embodiment, a low-melting point Pb-free solder having a liquidus point of 250 ° C. or lower, for example, Sn-3.0% Ag-0.5% Cu (liquidus point 220 ° C.) is used. It is not a thing.

本実施の形態では、絶縁性樹脂膜２６中の、接着剤Ｅおよび樹脂皮膜Ｌとして、エポキシ樹脂を用い、Ｐｂフリー半田の液相点よりも高いものを用いている。したがって、後述するパワーモジュールの組み立て工程において、絶縁性樹脂膜２６を形成した後で、Ｐｂフリー半田のリフロー工程を行うことが可能になる。本実施の形態によると、従来用いられていた２つの半田層に代えて、１つの半田層１４と、樹脂接着剤からなる絶縁性樹脂膜２６とを用いているので、工程の先後に応じて低融点のＰｂフリー半田と高融点のＰｂフリー半田とを用いる必要はなく、低融点のＰｂフリー半田だけで済むことになる。したがって、本実施の形態により、半田層１４をＰｂフリー化して、接続信頼性を確保しつつ、Ｐｂフリー化を図ることができる利点もある。   In the present embodiment, as the adhesive E and the resin film L in the insulating resin film 26, an epoxy resin is used, which is higher than the liquid phase point of Pb-free solder. Therefore, it becomes possible to perform a Pb-free solder reflow process after the insulating resin film 26 is formed in the power module assembly process described later. According to the present embodiment, instead of the conventionally used two solder layers, one solder layer 14 and the insulating resin film 26 made of a resin adhesive are used. It is not necessary to use a low melting point Pb-free solder and a high melting point Pb free solder, and only a low melting point Pb free solder is required. Therefore, according to the present embodiment, there is an advantage that the solder layer 14 can be made Pb-free and Pb-free can be achieved while ensuring connection reliability.

本実施の形態では、ヒートシンク２１の材料として、焼結アルミニウム（焼結Ａｌ）を用いているが、これに限定されるものではない。たとえば、Ａｌ，Ａｌ合金，Ｃｕ，Ｃｕ合金などの他の金属、ＡｌＮ，ＳｉＮ，ＢＮ，ＳｉＣ，ＷＣなどのセラミックス、或いは、Ａｌ−ＳｉＣ，Ｃｕ−Ｗ，Ｃｕ−Ｍｏなどの複合材料を用いてもよい。   In the present embodiment, sintered aluminum (sintered Al) is used as the material of the heat sink 21, but the material is not limited to this. For example, using other metals such as Al, Al alloy, Cu, Cu alloy, ceramics such as AlN, SiN, BN, SiC, WC, or composite materials such as Al—SiC, Cu—W, Cu—Mo. Also good.

本実施の形態では、金属配線２３の材料として、ＣｕまたはＣｕ合金を用いているが、これに限定されるものではない。たとえば、Ａｌ，Ａｌ合金，ＤＢＡ基板，ＤＢＣ基板や、Ａｌ−ＳｉＣ，Ｃｕ−Ｗ，Ｃｕ−Ｍｏなどの複合材料を用いてもよい。ただし、ＤＢＡ基板やＤＢＣ基板を用いると、製造コストが高くつく。本発明では、ＤＢＡ基板やＤＢＣ基板を用いなくても接合の信頼性を維持することができるので、金属配線２３をＣｕやＣｕ合金などの金属板単体構造とすることにより、製造コストの削減を図ることができる。   In the present embodiment, Cu or Cu alloy is used as the material of the metal wiring 23, but the material is not limited to this. For example, a composite material such as Al, Al alloy, DBA substrate, DBC substrate, Al—SiC, Cu—W, or Cu—Mo may be used. However, using a DBA substrate or a DBC substrate increases the manufacturing cost. In the present invention, since the reliability of bonding can be maintained without using a DBA substrate or a DBC substrate, manufacturing costs can be reduced by making the metal wiring 23 a single metal plate structure such as Cu or Cu alloy. Can be planned.

−パワーモジュールの製造工程−
次に、図７（ａ）〜（ｄ），図８（ａ）〜（ｄ）および図９（ａ）〜（ｃ）を参照しながら、本実施の形態のパワーモジュールの製造方法について説明する。図７（ａ）〜（ｄ）は、本実施の形態の製造工程における，樹脂接着剤の塗布からモジュール樹脂枠の取付までの工程を示す断面図である。図８（ａ）〜（ｄ）は、本実施の形態の製造工程における，チップマウントからポッティングまでの工程を示す断面図である。図９（ａ）〜（ｃ）は、本実施の形態の製造工程における，Ｏリングの設置からボルトの締結までの工程を示す断面図である。 -Power module manufacturing process-
Next, a method for manufacturing the power module of the present embodiment will be described with reference to FIGS. 7A to 7D, FIGS. 8A to 8D, and FIGS. 9A to 9C. . FIGS. 7A to 7D are cross-sectional views showing steps from application of the resin adhesive to attachment of the module resin frame in the manufacturing process of the present embodiment. 8A to 8D are cross-sectional views showing steps from chip mounting to potting in the manufacturing process of the present embodiment. FIGS. 9A to 9C are cross-sectional views showing steps from installation of an O-ring to fastening of a bolt in the manufacturing process of the present embodiment.

まず、図７（ａ）に示す工程で、焼結Ａｌからなり、平板部２１ａとフィン部２１ｂとを有するヒートシンク２１を準備する。そして、ヒートシンク２１の平板部２１ａの上面上に、上記図５（ａ）〜（ｃ）または図６に示す方法で、厚みがたとえば１００〜２００μｍの絶縁性樹脂膜２６を形成する。   First, in the step shown in FIG. 7A, a heat sink 21 made of sintered Al and having a flat plate portion 21a and fin portions 21b is prepared. Then, an insulating resin film 26 having a thickness of, for example, 100 to 200 μm is formed on the upper surface of the flat plate portion 21a of the heat sink 21 by the method shown in FIGS. 5A to 5C or FIG.

次に、図７（ｂ）に示す工程で、所定形状にパターニングされた金属配線２３を絶縁性樹脂膜２６の上にマウントし、図７（ｃ）に示す工程で、絶縁性樹脂膜２６により、金属配線２３をヒートシンク２１の平板部２１の上面に固着する。   Next, in the step shown in FIG. 7B, the metal wiring 23 patterned in a predetermined shape is mounted on the insulating resin film 26, and in the step shown in FIG. The metal wiring 23 is fixed to the upper surface of the flat plate portion 21 of the heat sink 21.

次に、図７（ｄ）に示す工程で、ヒートシンク２１の平板部２１ａの上に、モジュール樹脂枠５３を取り付ける。モジュール樹脂枠５３の内部および外表面には、電極端子層５６が一体成形により形成されている。そして、モジュール樹脂枠５３の内側には、電極端子層５６の一部が露出している。   Next, in the step shown in FIG. 7D, the module resin frame 53 is attached on the flat plate portion 21 a of the heat sink 21. Electrode terminal layers 56 are integrally formed on the inner and outer surfaces of the module resin frame 53. A part of the electrode terminal layer 56 is exposed inside the module resin frame 53.

次に、図８（ａ）に示す工程で、金属配線２３の上に、Ｐｂフリー半田を吐出または印刷し、Ｐｂフリー半田の上に、半導体チップ１１をマウントする。半導体チップ１１には、パワーデバイスとして機能するＩＧＢＴ、あるいはダイオードが形成されている。さらに、図８（ｂ）に示す工程で、パワーモジュールをリフロー炉に投入し、半導体チップ１１と金属配線２３とを接合する半田層１４を形成する。このときのリフロー炉の雰囲気は不活性ガス雰囲気または還元性雰囲気で、炉内の最高温度は２６０℃である。その後、フラックス洗浄を行なって、フラックス残渣を除去する。   Next, in a step shown in FIG. 8A, Pb-free solder is discharged or printed on the metal wiring 23, and the semiconductor chip 11 is mounted on the Pb-free solder. The semiconductor chip 11 is formed with an IGBT or a diode that functions as a power device. Further, in the step shown in FIG. 8B, the power module is put into a reflow furnace, and the solder layer 14 for joining the semiconductor chip 11 and the metal wiring 23 is formed. The atmosphere of the reflow furnace at this time is an inert gas atmosphere or a reducing atmosphere, and the maximum temperature in the furnace is 260 ° C. Thereafter, flux cleaning is performed to remove the flux residue.

次に、図８（ｃ）に示す工程で、比較的大径（たとえば４００μｍ径）のＡｌワイヤを用いたワイヤボンディングを行う。そして、半導体チップ１１の上面電極１２（図３参照）同士や、上面電極１２と金属配線２３との間、金属配線２３と電極端子層５６との間を接続する大電流用配線１８を形成する。その後、小径（たとえば１２５μｍ径）のＡｌワイヤを用いたワイヤボンディングを行なって、半導体チップ１１の上面電極１２と電極端子層５６との間を接続する信号配線１７を形成する。   Next, in the step shown in FIG. 8C, wire bonding using a relatively large diameter (for example, 400 μm diameter) Al wire is performed. Then, the large current wiring 18 is formed to connect the upper surface electrodes 12 (see FIG. 3) of the semiconductor chip 11, between the upper surface electrode 12 and the metal wiring 23, and between the metal wiring 23 and the electrode terminal layer 56. . Thereafter, wire bonding using an Al wire having a small diameter (for example, 125 μm diameter) is performed to form the signal wiring 17 that connects the upper surface electrode 12 of the semiconductor chip 11 and the electrode terminal layer 56.

次に、図８（ｄ）に示す工程で、シリコンゲルを用いたポッティングにより、モジュール樹脂枠５３の内方を埋めるゲル層４０を形成する。これにより、ヒートシンク２１の上面に設けられている、半導体チップ１１，信号配線１７，大電流用配線１８，金属配線２３，半田層１４，絶縁性樹脂膜２６などの部材が、ゲル層４０内に埋め込まれる。   Next, in the step shown in FIG. 8D, the gel layer 40 that fills the inside of the module resin frame 53 is formed by potting using silicon gel. Thereby, members such as the semiconductor chip 11, the signal wiring 17, the large current wiring 18, the metal wiring 23, the solder layer 14, and the insulating resin film 26 provided on the upper surface of the heat sink 21 are placed in the gel layer 40. Embedded.

次に、図９（ａ）に示す工程で、準備されている天板５０ａの矩形状貫通穴の周縁部に設けられた環状溝にＯリング２５を設置する。   Next, in the step shown in FIG. 9A, the O-ring 25 is installed in an annular groove provided at the peripheral edge of the rectangular through hole of the prepared top plate 50a.

次に、図９（ｂ）に示す工程で、天板５０ａの矩形状貫通穴にヒートシンク２１のフィン部２１ｂを挿通させて、パワーモジュール１０を放熱器５０にマウントし、図９（ｃ）に示す工程で、ボルト５４により、パワーモジュール１０を天板５０ａに固定する。同様にして、複数のパワーモジュールを、放熱器５０の複数の矩形状貫通穴に、それぞれ取り付ける。   Next, in the step shown in FIG. 9 (b), the fin portion 21b of the heat sink 21 is inserted into the rectangular through hole of the top plate 50a, and the power module 10 is mounted on the radiator 50. In the illustrated process, the power module 10 is fixed to the top board 50a by the bolt 54. Similarly, the plurality of power modules are respectively attached to the plurality of rectangular through holes of the radiator 50.

上述の工程により、放熱器５０の天板５０ａにパワーモジュール１０が実装された後、天板５０ａが容器５０ｂに接合される（図１および図２参照）。この接合は、機械かしめ等によって行なってもよい。これより、パワーモジュールセットが形成される。なお、先に天板５０ａと容器５０ｂとを接合してから、天板５０ａに各パワーモジュール１０を取り付けてもよい。   After the power module 10 is mounted on the top plate 50a of the radiator 50 by the above-described steps, the top plate 50a is joined to the container 50b (see FIGS. 1 and 2). This joining may be performed by mechanical caulking or the like. Thus, a power module set is formed. In addition, after joining the top plate 50a and the container 50b previously, you may attach each power module 10 to the top plate 50a.

本実施の形態のパワーモジュールの製造方法によると、先に、樹脂接着剤を用いて絶縁性樹脂膜２６を形成してから、Ｐｂフリー半田を用いて半田層１４を形成しているので、下方の部材の固着から上方の部材の固着までを、順次、効率よく行うことができる。すなわち、絶縁性樹脂膜２６の形成時には、金属配線２３のみを把持して樹脂接着剤の上に載置すればよく、半田層１４の形成時には、半導体チップ１１のみを把持してＰｂフリー半田の上に載置すればよいので、先に半田層１４を形成して半導体チップ１１および金属配線２３をヒートシンク２１上に載置するのに比べ、組立作業のための装置が簡素化され、作業能率も高くなる。よって、製造コストの低減を図ることができる。
しかも、本発明の絶縁性樹脂膜を用いることにより、被接着部材であるヒートシンク２１と金属配線２３との間の熱抵抗を、第２の接着剤層２６ｂに高充填率で混入されたフィラーによって低減しつつ、第１の接着剤層２６ａにより、接続の信頼性を高く維持することができる。 According to the method for manufacturing the power module of the present embodiment, the insulating resin film 26 is first formed using a resin adhesive, and then the solder layer 14 is formed using Pb-free solder. From the fixing of the member to the fixing of the upper member can be performed sequentially and efficiently. That is, when the insulating resin film 26 is formed, only the metal wiring 23 is gripped and placed on the resin adhesive, and when the solder layer 14 is formed, only the semiconductor chip 11 is gripped and Pb-free solder is formed. As compared with the case where the solder layer 14 is first formed and the semiconductor chip 11 and the metal wiring 23 are placed on the heat sink 21, the apparatus for the assembly work is simplified and the work efficiency is improved. Also gets higher. Therefore, the manufacturing cost can be reduced.
Moreover, by using the insulating resin film of the present invention, the thermal resistance between the heat sink 21 and the metal wiring 23, which are members to be bonded, is reduced by the filler mixed in the second adhesive layer 26b at a high filling rate. While being reduced, the first adhesive layer 26a can maintain high connection reliability.

（他の実施の形態）
本発明のパワーモジュールに配置される半導体素子は、ワイドバンドギャップ半導体（ＳｉＣ，ＧａＮなど）を用いたパワーデバイスでもよいし、Ｓｉを用いたパワーデバイスでもよい。 (Other embodiments)
The semiconductor element disposed in the power module of the present invention may be a power device using a wide band gap semiconductor (SiC, GaN, etc.) or a power device using Si.

上記実施の形態では、半導体チップ１１に、ＩＧＢＴが形成されているが、ＭＯＳＦＥＴ，ダイオード，ＪＦＥＴなどが形成された半導体チップを用いてもよい。   In the above embodiment, the IGBT is formed on the semiconductor chip 11, but a semiconductor chip on which a MOSFET, a diode, a JFET, or the like is formed may be used.

上記実施の形態では、天板５０ａに多数のパワーモジュール１０を取り付ける構造を採ったが、天板を兼ねる単一のヒートシンク上に多数の半導体チップを搭載してもよい。   In the above embodiment, a structure in which a large number of power modules 10 are attached to the top plate 50a is adopted. However, a large number of semiconductor chips may be mounted on a single heat sink that also serves as the top plate.

ヒートシンク２１との熱交換を行う熱交換媒体は、冷却能やコストを考慮すると、フロリナートや水などの液体であることが好ましい。ただし、ヘリウム，アルゴン，窒素，空気などの気体であってもよい。   The heat exchange medium for exchanging heat with the heat sink 21 is preferably a liquid such as fluorinate or water in consideration of cooling ability and cost. However, it may be a gas such as helium, argon, nitrogen or air.

上記開示された本発明の実施の形態の構造は、あくまで例示であって、本発明の範囲はこれらの記載の範囲に限定されるものではない。本発明の範囲は、特許請求の範囲の記載によって示され、さらに特許請求の範囲の記載と均等の意味及び範囲内でのすべての変更を含むものである。   The structure of the embodiment of the present invention disclosed above is merely an example, and the scope of the present invention is not limited to the scope of these descriptions. The scope of the present invention is indicated by the description of the scope of claims, and further includes meanings equivalent to the description of the scope of claims and all modifications within the scope.

本発明のパワーモジュールは、ＭＯＳＦＥＴ，ＩＧＢＴ，ダイオード，ＪＦＥＴ等を搭載した各種機器に利用することができ、本発明の絶縁性樹脂膜はこのようなパワーモジュールの要素として利用することができる。   The power module of the present invention can be used for various devices equipped with MOSFETs, IGBTs, diodes, JFETs, etc., and the insulating resin film of the present invention can be used as an element of such a power module.

実施の形態に係るパワーモジュールセットの構造を示す斜視図である。It is a perspective view which shows the structure of the power module set which concerns on embodiment. 実施の形態に係るパワーモジュールセットのII-II線における断面図である。It is sectional drawing in the II-II line of the power module set which concerns on embodiment. 図２の一部を拡大して示す断面図である。It is sectional drawing which expands and shows a part of FIG. 変形例に係る図２の一部を拡大して示す断面図である。It is sectional drawing which expands and shows a part of FIG. 2 which concerns on a modification. （ａ）〜（ｃ）は、絶縁性樹脂膜の形成手順の一例を示す断面図である。(A)-(c) is sectional drawing which shows an example of the formation procedure of an insulating resin film. 絶縁性樹脂膜の形成方法の他の例を示す断面図である。It is sectional drawing which shows the other example of the formation method of an insulating resin film. （ａ）〜（ｄ）は、実施の形態の製造工程における，樹脂接着剤の塗布からモジュール樹脂枠の取付までの工程を示す断面図である。(A)-(d) is sectional drawing which shows the process from application | coating of a resin adhesive to attachment of a module resin frame in the manufacturing process of embodiment. （ａ）〜（ｄ）は、実施の形態の製造工程における，チップマウントからポッティングまでの工程を示す断面図である。(A)-(d) is sectional drawing which shows the process from the chip mounting to potting in the manufacturing process of embodiment. （ａ）〜（ｃ）は、本実施の形態の製造工程における，Ｏリングの設置からボルトの締結までの工程を示す断面図である。(A)-(c) is sectional drawing which shows the process from installation of an O-ring to the fastening of a volt | bolt in the manufacturing process of this Embodiment. 従来のＩＧＢＴチップを搭載したパワーモジュールの構造を示す断面図である。It is sectional drawing which shows the structure of the power module carrying the conventional IGBT chip | tip.

符号の説明Explanation of symbols

ＣＦ１ 大径表面コートフィラー
ＣＦ２ 小径表面コートフィラー
Ｅ 接着剤
Ｆ フィラー
Ｌ 樹脂皮膜
１０ パワーモジュール
１１ 半導体チップ
１２ 上面電極
１３ 裏面電極
１４ 半田層
１７ 信号配線
１８ 大電流用配線
２１ ヒートシンク
２１ａ 平板部
２１ｂ フィン部
２３ 金属配線
２５ Ｏリング
２６ 絶縁性樹脂膜
２６ａ 第１の接着剤層
２６ｂ 第２の接着剤層
４０ ゲル層
５０ 放熱器
５０ａ 天板
５０ｂ 容器
５３ モジュール樹脂枠
５６ 電極端子層 CF1 Large diameter surface coat filler CF2 Small diameter surface coat filler E Adhesive F Filler L Resin film 10 Power module 11 Semiconductor chip 12 Top electrode 13 Back electrode 14 Solder layer 17 Signal wiring 18 High current wiring 21 Heat sink 21a Flat plate portion 21b Fin portion 23 Metal wiring 25 O-ring 26 Insulating resin film 26a First adhesive layer 26b Second adhesive layer 40 Gel layer 50 Radiator 50a Top plate 50b Container 53 Module resin frame 56 Electrode terminal layer

Claims (5)

無機絶縁性材料からなるフィラーおよび接着剤を含む第１の接着剤層と、
前記第１の接着剤層の上面および下面のうち少なくとも一方の面上に形成され、実質的に接着剤のみからなる第２の接着剤層と、
を備えている絶縁性樹脂膜。 A first adhesive layer comprising a filler and an adhesive made of an inorganic insulating material;
A second adhesive layer that is formed on at least one of the upper surface and the lower surface of the first adhesive layer and substantially consists of an adhesive; and
Insulating resin film. 請求項１記載の絶縁性樹脂膜において、
前記第１の接着剤層は、固体シート状に形成されている、絶縁性樹脂膜。 The insulating resin film according to claim 1,
The first adhesive layer is an insulating resin film formed in a solid sheet shape. 請求項２記載の絶縁性樹脂膜において、
前記第２の接着剤層は、熱可塑性の状態で固化されて固体シート状に形成されている、絶縁性樹脂膜。 The insulating resin film according to claim 2,
The second adhesive layer is an insulating resin film that is solidified in a thermoplastic state and formed into a solid sheet. 半導体チップ内の半導体素子と外部とを電気的に接続するための配線部材と、
前記配線部材を支持する支持部材と、
前記配線部材と前記支持部材との間に介在する，請求項１〜３のうちいずれか１つに記載の絶縁性樹脂膜と、
を備えているパワーモジュール。 A wiring member for electrically connecting a semiconductor element in the semiconductor chip and the outside;
A support member for supporting the wiring member;
The insulating resin film according to any one of claims 1 to 3, interposed between the wiring member and the support member,
Power module equipped with. 請求項４記載のパワーモジュールにおいて、
前記支持部材は、フィンを有するヒートシンク部材である、パワーモジュール。 The power module according to claim 4, wherein
The power module is a power module, wherein the support member is a heat sink member having fins.
JP2007185016A 2007-07-13 2007-07-13 Insulating resin film and power module Pending JP2009021530A (en)

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