JP2009004722A - 半導体パッケージの製造方法 - Google Patents
半導体パッケージの製造方法 Download PDFInfo
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- JP2009004722A JP2009004722A JP2007208620A JP2007208620A JP2009004722A JP 2009004722 A JP2009004722 A JP 2009004722A JP 2007208620 A JP2007208620 A JP 2007208620A JP 2007208620 A JP2007208620 A JP 2007208620A JP 2009004722 A JP2009004722 A JP 2009004722A
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- metal film
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Abstract
【解決手段】半導体パッケージ300の製造方法は、上面にボンディングパッド312が備えられた半導体チップの前記ボンディングパッド外側部分に溝を形成する工程、前記溝側壁に絶縁膜311を形成する工程、前記側壁に絶縁膜311が形成された溝を埋め込むように前記半導体チップ310上に金属膜を形成する工程、前記金属膜をエッチングして、溝を埋め込む貫通シリコンビア314及び前記貫通シリコンビア314とボンディングパッド312とを連結する再配線316を、同時に形成する工程、並びに前記貫通シリコンビア314の底面が半導体チップ310から突出するように前記半導体チップ310の下面を除去する工程を含む。
【選択図】図3E
Description
前記半導体チップの下面を除去する工程は、グラインディング法及びエッチング法のうちの少なくとも何れか一つ以上の方法で遂行する。
前記半導体チップの下面を除去する工程は、グラインディング法及びエッチング法のうちの少なくとも何れか一つ以上の方法で遂行する。
前記外部接続端子はソルダボールで構成する。
図示するように、スタック型半導体パッケージ400は、貫通シリコンビア414及び再配線416を有する少なくとも二つ以上の半導体チップ410が、貫通シリコンビア414が相互連結されるように、すなわち上部半導体チップ410の貫通シリコンビア414が下部半導体チップ410の再配線416上に付着するように、スタックされた構造である。
310、410、510 半導体チップ
311 絶縁膜
312、512 ボンディングパッド
313 シード金属膜
314、414、514 貫通シリコンビア
316、416、516 再配線
317 金属膜
380 第1のマスクパターン
382 第2のマスクパターン
420、520 基板
430 埋め込み材
460 ソルダボール
580 モールド部
T 溝
Claims (20)
- 上面にボンディングパッドが備えられた半導体チップの前記ボンディングパッド外側部分に溝を形成する工程、
前記溝側壁に絶縁膜を形成する工程、
前記側壁に絶縁膜が形成された溝を埋め込むように前記半導体チップ上に金属膜を形成する工程、
前記金属膜をエッチングして、溝を埋め込む貫通シリコンビア及び前記貫通シリコンビアとボンディングパッドとを連結する再配線を、同時に形成する工程、並びに
前記貫通シリコンビアの底面が半導体チップから突出するように前記半導体チップの下面を除去する工程
を含むことを特徴とする半導体パッケージの製造方法。 - 前記半導体チップの下面を除去する工程の後、
前記半導体チップの上面及び下面それぞれに、前記貫通シリコンビアの上面及び下面が露出するように、モールド部を形成する工程を更に含むことを特徴とする請求項1に記載の半導体パッケージの製造方法。 - 前記金属膜を形成する工程は、
前記溝を含んだ半導体チップ上にシード金属膜を蒸着する工程、
前記シード金属膜上に金属膜を鍍金する工程、及び
前記金属膜をエッチバックして一部厚さを除去する工程
を含むことを特徴とする請求項1に記載の半導体パッケージの製造方法。 - 前記シード金属膜及び前記金属膜は、銅(Cu)、アルミニウム(Al)、金(Au)及びこれらそれぞれの合金のうちの何れか一つで形成することを特徴とする請求項3に記載の半導体パッケージの製造方法。
- 前記貫通シリコンビア及び再配線を同時に形成する工程は、
前記金属膜上の貫通シリコンビア及び再配線形成領域にマスクを形成する工程、
前記マスクにより覆われない金属膜部分をエッチングする工程、並びに
前記マスクを除去する工程
を含むことを特徴とする請求項1に記載の半導体パッケージの製造方法。 - 前記金属膜のエッチングは湿式エッチング法で遂行することを特徴とする請求項5に記載の半導体パッケージの製造方法。
- 前記半導体チップの下面を除去する工程は、グラインディング法及びエッチング法のうちの少なくとも何れか一つ以上の方法で遂行することを特徴とする請求項1に記載の半導体パッケージの製造方法。
- 前記溝を形成する工程乃至前記半導体チップの下面を除去する工程は、ウェハーレベルにて遂行することを特徴とする請求項1に記載の半導体パッケージの製造方法。
- 前記ウェハーレベルにて半導体チップの下面を除去する工程の後、チップレベルに分離するようにソーイングする工程を更に含むことを特徴とする請求項8に記載の半導体パッケージの製造方法。
- 上面にボンディングパッドが備えられた半導体チップの前記ボンディングパッド外側部分に溝を形成する工程、
前記溝側壁に絶縁膜を形成する工程、
前記側壁に絶縁膜が形成された溝を埋め込むように前記半導体チップ上に金属膜を形成する工程、
前記金属膜をエッチングして、溝を埋め込む貫通シリコンビア及び前記貫通シリコンビアとボンディングパッドを連結する再配線を、同時に形成する工程、
前記貫通シリコンビアの底面が半導体チップから突出するように前記半導体チップの下面を除去する工程、並びに
前記底面が突出した貫通シリコンビアを有する少なくとも二つ以上の半導体チップを、前記貫通シリコンビアが相互連結されるようにスタックする工程
を含むことを特徴とする半導体パッケージの製造方法。 - 前記半導体チップの下面を除去する工程の後、かつ前記少なくとも二つ以上の半導体チップをスタックする工程の前、
前記半導体チップの上面及び下面それぞれに、前記貫通シリコンビアの上面及び下面が露出するように、モールド部を形成する工程を更に含むことを特徴とする請求項10に記載の半導体パッケージの製造方法。 - 前記金属膜を形成する工程は、
前記溝を含んだ半導体チップ上にシード金属膜を蒸着する工程、
前記シード金属膜上に金属膜を鍍金する工程、及び
前記金属膜をエッチバックして一部厚さを除去する工程
を含むことを特徴とする請求項10に記載の半導体パッケージの製造方法。 - 前記シード金属膜及び前記金属膜は、銅(Cu)、アルミニウム(Al)、金(Au)及びこれらそれぞれの合金膜のうちの何れか一つで形成することを特徴とする請求項10に記載の半導体パッケージの製造方法。
- 前記貫通シリコンビア及び再配線を同時に形成する工程は、
前記金属膜上の貫通シリコンビア及び再配線形成領域にマスクを形成する工程、
前記マスクにより覆われない金属膜部分をエッチングする工程、並びに
前記マスクを除去する工程、
を含むことを特徴とする請求項10に記載の半導体パッケージの製造方法。 - 前記金属膜のエッチングは湿式エッチング法で遂行することを特徴とする請求項10に記載の半導体パッケージの製造方法。
- 前記半導体チップの下面を除去する工程は、グラインディング法及びエッチング法のうちの少なくとも何れか一つ以上の方法で遂行することを特徴とする請求項10に記載の半導体パッケージの製造方法。
- 前記溝を形成する工程乃至前記半導体チップの下面を除去する工程は、ウェハーレベルにて遂行することを特徴とする請求項10に記載の半導体パッケージの製造方法。
- 前記ウェハーレベルにて半導体チップの下面を除去する工程の後、チップレベルに分離するようにソーイングする工程を更に含むことを特徴とする請求項17に記載の半導体パッケージの製造方法。
- 前記半導体チップの下面を除去する工程の後、
前記半導体チップを基板上に付着する工程、及び
前記基板の下面に外部接続端子を付着する工程
を更に含むことを特徴とする請求項10に記載の半導体パッケージの製造方法。 - 前記外部接続端子はソルダボールで構成することを特徴とする請求項19に記載の半導体パッケージの製造方法。
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WO2011036819A1 (ja) * | 2009-09-28 | 2011-03-31 | 株式会社 東芝 | 半導体装置の製造方法 |
US8535977B2 (en) | 2009-09-28 | 2013-09-17 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
JP5377657B2 (ja) * | 2009-09-28 | 2013-12-25 | 株式会社東芝 | 半導体装置の製造方法 |
WO2011055825A1 (ja) | 2009-11-09 | 2011-05-12 | 三菱瓦斯化学株式会社 | シリコン貫通ビアプロセスにおけるシリコン基板裏面エッチング用エッチング液及びこれを用いたシリコン貫通ビアを有する半導体チップの製造方法 |
JP5671606B2 (ja) * | 2011-03-09 | 2015-02-18 | 国立大学法人 東京大学 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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CN101330025A (zh) | 2008-12-24 |
US20080318361A1 (en) | 2008-12-25 |
CN101330025B (zh) | 2010-12-08 |
KR100895813B1 (ko) | 2009-05-06 |
KR20080111830A (ko) | 2008-12-24 |
US7795139B2 (en) | 2010-09-14 |
JP5179796B2 (ja) | 2013-04-10 |
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