JP2009004601A - Field bonding precision measuring method of charged particle beam lithography apparatus - Google Patents

Field bonding precision measuring method of charged particle beam lithography apparatus Download PDF

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JP2009004601A
JP2009004601A JP2007164700A JP2007164700A JP2009004601A JP 2009004601 A JP2009004601 A JP 2009004601A JP 2007164700 A JP2007164700 A JP 2007164700A JP 2007164700 A JP2007164700 A JP 2007164700A JP 2009004601 A JP2009004601 A JP 2009004601A
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vernier
field
amount
pattern
main scale
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Kanji Ozawa
寛司 小澤
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Jeol Ltd
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Jeol Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a field bonding precision measuring method of a charged particle beam lithography apparatus capable of reducing the amount of field superposition by a vernier pattern with a small occupied region while maintaining a measurable range with respect to the field bonding precision measuring method of the charged particle beam lithography apparatus. <P>SOLUTION: A primary scale of a vernier pattern and two vernier scales having an interval different from the primary scale and an opposite direction corresponding to the primary scale are each arranged in the vicinity of the lithography field end. The ends of the lithography field are superposed by a fixed amount and drawn in such a manner that two vernier scales contact with the upper and lower parts or the right and left of the primary scale. Thereby, the amount of expansion/contraction and rotation of the field are calculated. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は荷電粒子ビーム描画装置のフィールド接合精度測定方法に関し、更に詳しくは電子ビーム描画装置等の荷電粒子線描画装置において、描画フィールドの伸縮及び回転を測定するようにした荷電粒子ビーム描画装置のフィールド接合精度測定方法に関する。   The present invention relates to a method for measuring field bonding accuracy of a charged particle beam drawing apparatus, and more particularly, to a charged particle beam drawing apparatus such as an electron beam drawing apparatus that measures expansion / contraction and rotation of a drawing field. The present invention relates to a method for measuring field bonding accuracy.

荷電粒子線描画装置において、描画フィールド間をつなぐ時のつなぎ精度を測定するためにバーニアを用いたフィールド接合精度測定方法が用いられる。図４はバーニアパターンによるフィールド接合精度測定例を示す図である。（ａ）は１フィールドの大きさを示しており、該フィールド内に主尺１と副尺２が図に示すようなレイアウトで配置されている。即ち、主尺１と副尺２は描画フィールド端近傍に配置されている。主尺１と副尺２はそれぞれ２つ設けられており、縦バーニアパターンと横バーニアパターンから構成されている。このバーニアパターンは、荷電粒子線描画装置を用いて作成されるものである。   In a charged particle beam drawing apparatus, a field junction accuracy measurement method using vernier is used to measure the connection accuracy when connecting drawing fields. FIG. 4 is a diagram showing an example of field junction accuracy measurement using a vernier pattern. (A) shows the size of one field, and the main scale 1 and the sub-scale 2 are arranged in the layout as shown in the figure. That is, the main scale 1 and the vernier 2 are arranged near the drawing field end. Two main scales 1 and two sub-scales 2 are provided, which are composed of a vertical vernier pattern and a horizontal vernier pattern. This vernier pattern is created using a charged particle beam drawing apparatus.

ここで、（ａ）に示すようなバーニアパターンを、当該描画フィールドを一定量だけ重ねることにより、主尺と副尺とが接触するように描画を行なう。（ｂ）はこの時の描画のようすを示す図である。３は描画フィールドの重なり領域を示している。重なり領域３内に主尺１と副尺１のバーニアパターンの重なりが形成される。ここで、Ａは描画フィールドの伸縮を測定するためのパターン、ＢとＣは描画フィールドの回転を測定するためのパターンである。   Here, a vernier pattern as shown in (a) is drawn so that the main scale and the vernier are in contact with each other by overlapping the drawing field by a certain amount. (B) is a diagram showing the drawing at this time. Reference numeral 3 denotes an overlapping area of drawing fields. Overlapping of the vernier patterns of the main scale 1 and the sub-scale 1 is formed in the overlapping region 3. Here, A is a pattern for measuring the expansion and contraction of the drawing field, and B and C are patterns for measuring the rotation of the drawing field.

（ｃ）は描画フィールド間の伸縮を測定するパターンＡを拡大表示したものである。１１は主尺パターンを、１２は副尺パターンをそれぞれ示している。描画フィールド間の伸縮がない場合には、（ｃ）に示すように主尺と副尺の真ん中のバーニア１１ａと１２ａとが一直線に重なり合う。ここで、描画フィールド間に伸縮がある場合は、真ん中のバーニア１１ａと１２ａは重なり合わず、真ん中のバーニアから離れたバーニアが一直線に重なり合う。   (C) is an enlarged display of the pattern A for measuring expansion and contraction between drawing fields. Reference numeral 11 denotes a main scale pattern, and 12 denotes a vernier pattern. When there is no expansion / contraction between the drawing fields, the vernier 11a and 12a in the middle of the main and sub-scales overlap in a straight line as shown in FIG. Here, when there is expansion / contraction between the drawing fields, the middle vernier 11a and 12a do not overlap, and the vernier far from the middle vernier overlaps in a straight line.

そこで、主尺のバーニア間の距離を例えばｎ、副尺のバーニア間の距離をｎ´とし、真ん中のバーニアから３番目のバーニアが一直線に重なり合った場合には、この時の描画フィールド間の伸縮量は（ｎ−ｎ´）×３と測定する。このようにして描画フィールド間の接合精度を求める。以上、伸縮量を求める場合について説明したが、回転量を求める場合にも同様にして求める。   Therefore, when the distance between the main verniers is n, for example, the distance between the vernier verniers is n ', and the third vernier from the middle vernier overlaps in a straight line, the expansion / contraction between the drawing fields at this time The quantity is measured as (n−n ′) × 3. In this way, the joining accuracy between the drawing fields is obtained. Although the case where the amount of expansion / contraction is obtained has been described above, the same applies to the case where the amount of rotation is obtained.

従来のこの種の装置としては、フィールド間に形成された主尺目盛，副尺目盛と同一形状の主尺目盛と副尺目盛を形成し、これら両者の接触状態を認識することで、フィールド間のパターンのズレを測定する技術が知られている（例えば特許文献１参照）。また、転写用のパターン及び位置合わせ用のマークが形成された第１マスクを用いて、前記転写用のパターン及び位置合わせ用のマークの像を前記感光基板上の第１領域に転写し、前記感光基板上の第１領域に隣接する第２領域に前記転写用パターンの像につなぎ合わせて第１マスク又は該第１マスクとは異なる第２マスクのパターンの像を転写する際に、前記位置合わせ用のマークの像を検出し、該検出結果に基づいて前記第２領域に転写すべきパターンが形成されたマスクと前記感光基板との位置合わせを行なう技術が知られている。
特開平２−５４０７号公報（第３頁左上欄第１６行〜同頁左下欄第１０行、第１図） 特開平６−２０４１０５号公報（段落００１５〜００３０、図１、図２）。 This type of conventional device has a main scale and a sub-scale formed in the same shape as the main scale and the sub-scale formed between the fields, and by recognizing the contact state between these two, A technique for measuring the deviation of the pattern is known (see, for example, Patent Document 1). In addition, using the first mask on which the transfer pattern and the alignment mark are formed, the image of the transfer pattern and the alignment mark is transferred to the first region on the photosensitive substrate, and When transferring an image of a first mask or a pattern of a second mask different from the first mask onto the second area adjacent to the first area on the photosensitive substrate, the position is transferred. A technique is known in which an image of an alignment mark is detected, and a mask on which a pattern to be transferred to the second region is formed and the photosensitive substrate are aligned based on the detection result.
JP-A-2-5407 (page 3, upper left column, line 16 to page lower left column, line 10, FIG. 1) JP-A-6-204105 (paragraphs 0015 to 0030, FIGS. 1 and 2).

前述した従来の技術では、バーニアパターンの測定可能範囲を決定する主尺及び副尺の本数に比例して描画フィールドに対する占有領域及びフィールドの重ね量が大きくなるため、小さなフィールドの接合精度測定には適用できないという問題があった。   In the conventional technique described above, the occupied area and the amount of field overlap with the drawing field increase in proportion to the number of main and sub-scales that determine the measurable range of the vernier pattern. There was a problem that it was not applicable.

本発明はこのような課題に鑑みてなされたものであって、測定可能範囲を維持したまま占有領域の小さいバーニアパターンでフィールド重ね量を少なくできる荷電粒子ビーム描画装置のフィールド接合精度測定方法を提供することを目的としている。   The present invention has been made in view of such a problem, and provides a method for measuring the field bonding accuracy of a charged particle beam drawing apparatus capable of reducing the amount of field overlap with a vernier pattern having a small occupied area while maintaining a measurable range. The purpose is to do.

（１）請求項１記載の発明は、荷電粒子線を用いた描画装置の描画フィールドの伸縮及び回転を測定するフィールド接合精度測定方法であり、当該荷電粒子線描画装置により描画されたフィールド上のバーニアパターンを光学顕微鏡を用いた観察装置により観察し、当該バーニアパターンの主尺と副尺が一致する位置から、当該フィールドの伸縮量及び回転量を算出するフィールド接合精度測定方法において、バーニアパターンの主尺及び当該主尺と間隔が異なりかつ当該主尺と一致する方向が正反対の２つの副尺を各々描画フィールド端近傍に配置し、当該主尺の上下又は左右に当該２つの副尺が接触するように当該描画フィールドの端を一定量重ねて描画することで当該フィールドの伸縮量及び回転量を算出することを特徴とする。
（２）請求項２記載の発明は、前記伸縮量及び回転量の算出は、主尺と副尺のバーニアの端から、主尺と副尺とが一直線になるバーニアまでの本数を測定するものであることを特徴とする。 (1) The invention described in claim 1 is a field junction accuracy measuring method for measuring expansion and contraction and rotation of a drawing field of a drawing apparatus using a charged particle beam, and the field on the field drawn by the charged particle beam drawing apparatus. In a field joining accuracy measurement method of observing a vernier pattern with an observation device using an optical microscope and calculating the amount of expansion and contraction and rotation of the field from a position where the main scale and the sub-scale of the vernier pattern coincide, Two main scales and two main scales that are different in distance from the main scale and opposite to the main scale are arranged in the vicinity of the drawing field edge, and the two main scales are in contact with the top and bottom or left and right of the main scale. As described above, the amount of expansion and contraction and the amount of rotation of the field are calculated by drawing a certain amount of the edges of the drawing field.
(2) In the invention according to claim 2, the amount of expansion and contraction and the amount of rotation are measured by measuring the number of vernier from the end of the main and vernier verniers to the vernier where the main and vernier are in a straight line. It is characterized by being.

（１）請求項１記載の発明によれば、バーニアパターンの主尺及び当該主尺と間隔が異なりかつ当該主尺と一致する方向が正反対の２つの副尺を各々描画フィールド端近傍に配置し、当該主尺の上下又は左右に当該２つの副尺が接触するように当該描画フィールドの端を一定量重ねて描画することで、測定可能範囲を維持したまま占有領域の小さいバーニアパターンでフィールド重ね量を少なくすることができる。
（２）請求項２記載の発明によれば、フィールド間の伸縮量及び回転量を数値で表現することができる。 (1) According to the invention described in claim 1, the vernier pattern main scale and two vernier scales that are different in distance from the main scale and opposite to the main scale are arranged near the drawing field end. Overlaying the edges of the drawing field by a certain amount so that the two verniers touch the top and bottom or the left and right of the main scale, the field overlap with a vernier pattern with a small occupied area while maintaining the measurable range The amount can be reduced.
(2) According to the invention described in claim 2, the expansion / contraction amount and the rotation amount between the fields can be expressed numerically.

以下、図面を参照して本発明の実施の形態を詳細に説明する。図１は本発明を実施するためのシステム構成例を示す図であり、電子ビーム描画装置の構成例を示している。図において、１１は電子を出射する電子源、１２は該電子源１１から出射される電子ビーム、１３は電子ビーム１２を集束する集束レンズ、１４は電子ビーム１２を波形整形する第１アパーチャ、１５，１６は集束レンズ１３を通過した電子ビーム１２を集束する中間レンズである。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram showing a system configuration example for carrying out the present invention, and shows a configuration example of an electron beam drawing apparatus. In the figure, 11 is an electron source that emits electrons, 12 is an electron beam emitted from the electron source 11, 13 is a focusing lens that focuses the electron beam 12, 14 is a first aperture that shapes the electron beam 12, and 15 , 16 are intermediate lenses that focus the electron beam 12 that has passed through the focusing lens 13.

１７は電子ビーム１２をブランキングするブランキング電極、１８は電子ビーム１２を波形整形する第２アパーチャである。１９は電子ビーム１２を偏向する偏向電極、２０は電子ビーム１２を細かく絞る対物レンズ、２１は電子ビーム１２により所定の描画がなされる材料、２２は該材料２１を載置するステージ、２３は該ステージ２２を所定方向に移動させるステージ駆動制御装置である。該ステージ駆動制御装置２３としては、例えばゴニオメータが用いられる。   Reference numeral 17 denotes a blanking electrode for blanking the electron beam 12, and 18 denotes a second aperture for shaping the waveform of the electron beam 12. 19 is a deflection electrode for deflecting the electron beam 12, 20 is an objective lens for finely focusing the electron beam 12, 21 is a material on which a predetermined drawing is performed by the electron beam 12, 22 is a stage on which the material 21 is placed, and 23 is the It is a stage drive control device that moves the stage 22 in a predetermined direction. For example, a goniometer is used as the stage drive control device 23.

２４は前記偏向電極１９を駆動して材料２１上に所定の描画を行なうビーム走査制御装置、２５はブランキング電極１７にブランキング制御信号を与えるブランキング制御装置である。２６は装置全体の動作を制御する制御装置である。該制御装置２６としては、例えばコンピュータが用いられる。該制御装置２６は、前記ステージ駆動制御装置２３，ビーム走査制御装置２４及びブランキング制御装置２５の動作を制御する。   A beam scanning control device 24 drives the deflection electrode 19 to perform predetermined drawing on the material 21. A blanking control device 25 gives a blanking control signal to the blanking electrode 17. A control device 26 controls the operation of the entire apparatus. As the control device 26, for example, a computer is used. The control device 26 controls operations of the stage drive control device 23, the beam scanning control device 24 and the blanking control device 25.

２７は電子光学レンズ系を制御する電子光学レンズ系制御装置、２８は電子源１１を制御する電子源制御装置である。前記制御装置２６は、電子光学レンズ系制御装置２７及び電子源制御装置２８の動作を制御する。なお、電子ビームの代わりに他の荷電粒子ビームを用いることができる。このように構成された装置の動作を説明すれば、以下の通りである。   27 is an electron optical lens system controller for controlling the electron optical lens system, and 28 is an electron source controller for controlling the electron source 11. The control device 26 controls operations of the electron optical lens system control device 27 and the electron source control device 28. Other charged particle beams can be used instead of the electron beams. The operation of the apparatus configured as described above will be described as follows.

制御装置２６は、偏向電極１９を制御して材料２１上に主尺と副尺からなるバーニアパターンを描画する。このバーニアパターンを描画するにあたっては、前記電子光学レンズ系制御装置２７で各種の電子レンズを制御する。同時に、ブランキング電極１７のブランキングも制御する。この結果、材料上には、所定のバーニアパターンが形成される。この場合において、バーニアパターンは、フィールドの境界領域が重ね描画される。バーニアパターンが描画された材料は、取り出されて光学顕微鏡等の観察装置により観察される。以下、本発明のフィールド接合精度測定方法について詳細に説明する。   The control device 26 controls the deflection electrode 19 to draw a vernier pattern composed of a main scale and a sub-scale on the material 21. In drawing this vernier pattern, the electron optical lens system controller 27 controls various electron lenses. At the same time, the blanking of the blanking electrode 17 is also controlled. As a result, a predetermined vernier pattern is formed on the material. In this case, the vernier pattern is drawn by overlapping the boundary region of the field. The material on which the vernier pattern is drawn is taken out and observed with an observation device such as an optical microscope. Hereinafter, the field junction accuracy measuring method of the present invention will be described in detail.

本発明は荷電粒子ビームを用いた描画装置の描画フィールドの伸縮及び回転を測定するフィールド接合精度測定方法であり、前述した荷電粒子ビーム描画装置により描画されたフィールド上のバーニアパターンを光学顕微鏡等の観察装置により観察する。そして、当該バーニアパターンの主尺と副尺とが一致する位置から、当該フィールドの伸縮量及び回転量を算出するフィールド接合精度測定方法である。   The present invention is a field junction accuracy measuring method for measuring expansion and contraction and rotation of a drawing field of a drawing apparatus using a charged particle beam, and a vernier pattern on a field drawn by the above-described charged particle beam drawing apparatus is used for an optical microscope or the like. Observe with an observation device. And it is a field joining accuracy measuring method which calculates the expansion-contraction amount and rotation amount of the said field from the position where the main scale and sub-scale of the said vernier pattern correspond.

この目的のために、バーニアパターンの主尺及び当該主尺と間隔が異なりかつ当該主尺と一致する方向が正反対の２つの副尺をそれぞれ描画フィールド端近傍に配置し、当該主尺の上下又は左右に当該２つの副尺が接触するように当該描画フィールドの端を一定量重ねて描画することで、当該フィールドの伸縮量及び回転量を算出するものである。   For this purpose, two vernier patterns of the vernier pattern and two verniers whose distance from the main scale is different and opposite to the main scale are arranged in the vicinity of the drawing field edge, respectively, By drawing a certain amount of the end of the drawing field so that the two verniers touch the left and right, the amount of expansion / contraction and the amount of rotation of the field are calculated.

図２は本発明で用いるバーニアパターン例を示す図である。（ａ）は１フィールド当たりに描画されるバーニアパターンを示している。図において、３０は描画フィールドである。該描画フィールド３０は、ステージ２２（図１参照）を移動させないで、描画できる材料２１の範囲として定義される。   FIG. 2 is a diagram showing an example of a vernier pattern used in the present invention. (A) shows a vernier pattern drawn per field. In the figure, 30 is a drawing field. The drawing field 30 is defined as a range of the material 21 that can be drawn without moving the stage 22 (see FIG. 1).

３１，３２は主尺である。主尺３１は描画フィールド３０の上端部に形成され、主尺３２は描画フィールド３０の左端部に形成される。これら主尺３１，３２は、それぞれ縦方向のパターンと横方向のパターンとの組み合わせである。３５，３６は副尺Ａ、３７，３８は副尺Ｂである。副尺Ａ３５，３６と、副尺Ｂ３７，３８は縦方向のパターンと横方向のパターンとの組み合わせである。   31 and 32 are main scales. The main scale 31 is formed at the upper end of the drawing field 30, and the main scale 32 is formed at the left end of the drawing field 30. These main scales 31 and 32 are each a combination of a vertical pattern and a horizontal pattern. 35 and 36 are the vernier A, and 37 and 38 are the vernier B. The vernier A35, 36 and the vernier B37, 38 are a combination of a vertical pattern and a horizontal pattern.

副尺Ａ３５は、描画フィールド３０の右端に形成され、副尺Ｂ３７もほぼ描画フィールド３０の右端部に副尺Ａ３５と近接して形成されている。副尺Ａ３６は描画フィールド３０の下端に形成され、副尺Ｂ３８もほぼ描画フィールド３０の下端部に副尺Ａ３６と近接して形成されている。図に示すように、バーニアパターンの主尺３１，３２と間隔が異なりかつ当該主尺３１，３２と一致する方向が正反対の２つの副尺Ａ３５，副尺Ｂ３７と、副尺Ａ３６，副尺Ｂ３８が形成されている。   The vernier A 35 is formed at the right end of the drawing field 30, and the vernier B 37 is also formed in the vicinity of the vernier A 35 almost at the right end of the drawing field 30. The vernier A 36 is formed at the lower end of the drawing field 30, and the vernier B 38 is also formed in the vicinity of the vernier A 36 almost at the lower end of the drawing field 30. As shown in the figure, two vernier A35, vernier B37, vernier A36, and vernier B38 are spaced apart from the main scales 31 and 32 of the vernier pattern and are opposite to each other in the direction coincident with the main scales 31 and 32. Is formed.

（ｂ）は（ａ）に示す描画フィールドが２個重ね合わせ描画された場合を示している。図において、４０が重ね合わせ領域を示している。該重ね合わせ領域４０に、３つの重ね合わせパターンＤ，Ｅ，Ｆが形成されている。図に示す重ね合わせ領域４０は、（ａ）に示す描画フィールド３０の副尺Ａ３５，副尺Ｂ３７と、次の画像フィールド３０Ａの主尺３２とが重ね合わせ描画された例を示している。ここで、重ね合わせパターンＤとＦは描画フィールドの回転量を算出するためのものであり、重ね合わせパターンＥは描画フィールドの伸縮量を算出するためのものである。   (B) shows a case where two drawing fields shown in (a) are overlaid and drawn. In the figure, reference numeral 40 denotes an overlapping region. Three overlapping patterns D, E, and F are formed in the overlapping region 40. The overlapping region 40 shown in the figure shows an example in which the vernier A35 and vernier B37 of the drawing field 30 shown in FIG. Here, the overlapping patterns D and F are for calculating the rotation amount of the drawing field, and the overlapping pattern E is for calculating the expansion / contraction amount of the drawing field.

描画フィールド端近傍には、フィールドの伸縮量測定用バーニアパターンの主尺、副尺Ａ，副尺Ｂ及びフィールドの回転量測定用バーニアパターンの主尺、副尺Ａ、副尺Ｂを描画フィールドを一定量重ねることで、主尺の上下あるいは左右に副尺Ａ，副尺Ｂが接触するように配置する。   In the vicinity of the drawing field end, the main scale, vernier A and vernier B of the vernier pattern for measuring the amount of expansion / contraction of the field, and the main scale, vernier A and vernier B of the vernier pattern for measuring the amount of rotation of the field By placing a certain amount, the vernier A and the vernier B are arranged so as to contact the upper and lower sides or the left and right sides of the main metric.

図３は本発明によるバーニアパターンの読み取りの説明図である。図に示すパターンは、図２のＥに示すパターンを拡大表示したものである。３つのパターンが上下方向に並んでいる。一番上は副尺Ｂのパターンを、真ん中は主尺パターンを、一番下は副尺Ａのパターンをそれぞれ示している。前記主尺と副尺Ａ、及び前記主尺と副尺Ｂは、フィールドの伸縮量あるいは回転量が理想値の場合に、主尺と副尺とが一致し、当該フィールドの伸縮量あるいは回転量が理想値に対して正又は負となった場合に、前記主尺と副尺Ａ、あるいは前記主尺と副尺Ｂの何れかの主尺と副尺が一致する。   FIG. 3 is an explanatory diagram for reading a vernier pattern according to the present invention. The pattern shown in the figure is an enlarged display of the pattern shown in E of FIG. Three patterns are lined up and down. The top is the vernier B pattern, the middle is the main scale pattern, and the bottom is the vernier A pattern. The main scale and the sub-scale A, and the main scale and the sub-scale B, when the expansion / contraction amount or the rotation amount of the field is an ideal value, the main measurement and the sub-measure match, Is positive or negative with respect to the ideal value, either the main scale and the sub-scale A or the main scale and the sub-scale B have the same main scale and sub-scale.

例えば（ａ）に示す負の場合、主尺と副尺Ａとの間で伸縮量を求める。例えば左端のバーニアｖ１から右方向に主尺と副尺Ａとが一直線になっているバーニアを見つける。この時、左端のバーニアｖ１から第４番目のバーニアが一直線になっていた場合、主尺のバーニア間の距離をＬ、副尺Ａのバーニア間の距離をＬ´として３×（Ｌ−Ｌ´）がこの時の伸縮量である。（ｃ）の示す正の場合、例えば右端のバーニアｖ７から左方向に写真と副尺Ｂとが一直線になっているバーニアを見つける。この時、右端のバーニアｖ７から第３番目のバーニアが一直線になっていた場合、主尺のバーニア間の距離をＬ、副尺Ｂのバーニア間の距離をＬ´´として２×（Ｌ−Ｌ´´）がこの時の伸縮量である。   For example, in the case of the negative shown in (a), the amount of expansion / contraction is obtained between the main scale and the vernier A. For example, a vernier in which the main scale and the vernier scale A are aligned in the right direction from the leftmost vernier v1 is found. At this time, if the fourth vernier from the vernier v1 at the left end is in a straight line, the distance between the verniers of the main scale A is L, and the distance between the verniers of the sub-scale A is L ′, 3 × (L−L ′ ) Is the amount of expansion and contraction at this time. In the positive case shown in (c), for example, a vernier in which the photograph and the vernier B are aligned in the left direction from the vernier v7 at the right end is found. At this time, when the third vernier from the rightmost vernier v7 is in a straight line, the distance between the verniers of the main scale B is L, and the distance between the verniers of the sub-scale B is L ″, 2 × (L−L "") Is the amount of expansion and contraction at this time.

以上、伸縮量を求める場合について説明したが、フィールド間の回転量の算出方法も同様にして求めることができる。この場合、回転量も距離として算出する。
上述の実施の形態では、荷電粒子ビーム描画装置として電子ビーム描画装置の場合を例にとったが、本発明はこれに限るものではなく、その他の荷電粒子ビームについても同様に適用することができる。 Although the case where the amount of expansion / contraction is obtained has been described above, the method for calculating the amount of rotation between fields can be obtained in the same manner. In this case, the rotation amount is also calculated as a distance.
In the above-described embodiment, the electron beam lithography apparatus is taken as an example of the charged particle beam lithography apparatus. However, the present invention is not limited to this, and can be similarly applied to other charged particle beams. .

このように、本発明によれば、測定可能範囲を維持したまま占有領域の小さいバーニアパターンでフィールド重ね量を少なくできる荷電粒子ビーム描画装置のフィールド接合精度測定方法を提供することができる。   As described above, according to the present invention, it is possible to provide a method for measuring the field bonding accuracy of a charged particle beam writing apparatus capable of reducing the amount of field overlap with a vernier pattern having a small occupied area while maintaining a measurable range.

本発明を実施するためのシステム構成例を示す図である。It is a figure which shows the system configuration example for implementing this invention. 本発明で用いるバーニアパターン例を示す図である。It is a figure which shows the example of a vernier pattern used by this invention. 本発明によるバーニアパターンの読み取りの説明図である。It is explanatory drawing of the reading of the vernier pattern by this invention. バーニアパターンによるフィールド接合精度測定例を示す図である。It is a figure which shows the example of a field joining accuracy measurement by a vernier pattern.

符号の説明Explanation of symbols

１１ 電子源
１２ 電子ビーム
１３ 集束レンズ
１４ 第１アパーチャ
１５ 中間レンズ
１６ 中間レンズ
１７ ブランキング電極
１８ 第２アパーチャ
１９ 偏向電極
２０ 対物レンズ
２１ 材料
２２ ステージ
２３ ステージ駆動制御装置
２４ ビーム走査制御装置
２５ ブランキング制御装置
２６ 制御装置
２７ 電子光学レンズ系制御装置
２８ 電子源制御装置 DESCRIPTION OF SYMBOLS 11 Electron source 12 Electron beam 13 Focusing lens 14 1st aperture 15 Intermediate lens 16 Intermediate lens 17 Blanking electrode 18 2nd aperture 19 Deflection electrode 20 Objective lens 21 Material 22 Stage 23 Stage drive control device 24 Beam scanning control device 25 Blanking Control device 26 Control device 27 Electro-optical lens system control device 28 Electron source control device

Claims (2)

荷電粒子線を用いた描画装置の描画フィールドの伸縮及び回転を測定するフィールド接合精度測定方法であり、当該荷電粒子線描画装置により描画されたフィールド上のバーニアパターンを光学顕微鏡を用いた観察装置により観察し、当該バーニアパターンの主尺と副尺が一致する位置から、当該フィールドの伸縮量及び回転量を算出するフィールド接合精度測定方法において、
バーニアパターンの主尺及び当該主尺と間隔が異なりかつ当該主尺と一致する方向が正反対の２つの副尺を各々描画フィールド端近傍に配置し、当該主尺の上下又は左右に当該２つの副尺が接触するように当該描画フィールドの端を一定量重ねて描画することで当該フィールドの伸縮量及び回転量を算出することを特徴とする荷電粒子ビーム描画装置のフィールド接合精度測定方法。 A field junction accuracy measuring method for measuring expansion and contraction and rotation of a drawing field of a drawing apparatus using a charged particle beam, and a vernier pattern on the field drawn by the charged particle beam drawing apparatus by an observation apparatus using an optical microscope In the field joining accuracy measurement method for calculating the amount of expansion and contraction and rotation of the field from the position where the main scale and the vernier of the vernier pattern coincide with each other,
The vernier pattern main scale and two vernier scales that are different in distance from the main scale and that are opposite in direction to the main scale are arranged near the drawing field end, respectively, A method for measuring field bonding accuracy of a charged particle beam writing apparatus, wherein the amount of expansion and contraction and rotation of the field are calculated by drawing a predetermined amount of the end of the drawing field so that the scale comes into contact. 前記伸縮量及び回転量の算出は、主尺と副尺のバーニアの端から、主尺と副尺とが一直線になるバーニアまでの本数を測定するものであることを特徴とする荷電粒子ビーム描画装置のフィールド接合精度測定方法。   The calculation of the amount of expansion and contraction and the amount of rotation is performed by measuring the number of vernier lines from the end of the vernier of the main scale and the vernier to the vernier in which the main scale and the vernier are in a straight line. A method for measuring the accuracy of field bonding of a device.
JP2007164700A 2007-06-22 2007-06-22 Field bonding precision measuring method of charged particle beam lithography apparatus Pending JP2009004601A (en)

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US10256073B2 (en) 2017-02-15 2019-04-09 Nuflare Technology, Inc. Charged particle beam writing method

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JPH0499309A (en) * 1990-08-17 1992-03-31 Sony Corp Vernier pattern

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JPS59134826A (en) * 1983-01-21 1984-08-02 Hitachi Ltd Vernier pattern
JPH03238809A (en) * 1990-02-15 1991-10-24 Nec Corp Alignment mask for semiconductor device
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Publication number Priority date Publication date Assignee Title
JP2014036147A (en) * 2012-08-09 2014-02-24 Dainippon Printing Co Ltd Method for detecting positional deviation and substrate having pattern for detecting positional deviation
US10256073B2 (en) 2017-02-15 2019-04-09 Nuflare Technology, Inc. Charged particle beam writing method

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