JP2008523591A - 高誘電率ゲート誘電体および金属ゲート電極をもつ半導体デバイスの作成方法 - Google Patents
高誘電率ゲート誘電体および金属ゲート電極をもつ半導体デバイスの作成方法 Download PDFInfo
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- JP2008523591A JP2008523591A JP2007544642A JP2007544642A JP2008523591A JP 2008523591 A JP2008523591 A JP 2008523591A JP 2007544642 A JP2007544642 A JP 2007544642A JP 2007544642 A JP2007544642 A JP 2007544642A JP 2008523591 A JP2008523591 A JP 2008523591A
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- 239000002184 metal Substances 0.000 title claims abstract description 107
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 49
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
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- 125000006850 spacer group Chemical group 0.000 claims description 20
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- 230000000873 masking effect Effects 0.000 claims description 11
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052697 platinum Inorganic materials 0.000 claims description 5
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- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 5
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- XWCMFHPRATWWFO-UHFFFAOYSA-N [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] XWCMFHPRATWWFO-UHFFFAOYSA-N 0.000 claims description 4
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- NSXCBNDGHHHVKT-UHFFFAOYSA-N [Ti].[Sr].[Ba] Chemical compound [Ti].[Sr].[Ba] NSXCBNDGHHHVKT-UHFFFAOYSA-N 0.000 claims 3
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims 3
- FAUIDPFKEVQLLR-UHFFFAOYSA-N [O-2].[Zr+4].[Si+4].[O-2].[O-2].[O-2] Chemical compound [O-2].[Zr+4].[Si+4].[O-2].[O-2].[O-2] FAUIDPFKEVQLLR-UHFFFAOYSA-N 0.000 claims 2
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- BOIGHUSRADNYQR-UHFFFAOYSA-N aluminum;lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[La+3] BOIGHUSRADNYQR-UHFFFAOYSA-N 0.000 claims 1
- 230000033444 hydroxylation Effects 0.000 claims 1
- 238000005805 hydroxylation reaction Methods 0.000 claims 1
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
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- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Abstract
Description
Claims (20)
- 半導体デバイスを作成する方法であって:
基板上に二酸化ケイ素層を形成する段階と;
前記二酸化ケイ素層に窒素を加えて窒化二酸化ケイ素層を形成する段階と;
前記窒化二酸化ケイ素層の上に犠牲層を形成する段階と;
犠牲層を除去して溝を生成する段階と;
前記窒化二酸化ケイ素層の上で前記溝の中に高誘電率ゲート誘電体層を形成する段階と;
前記高誘電率ゲート誘電体層の上に金属ゲート電極を形成する段階、
とを有する方法。 - 前記高誘電率ゲート誘電体層が、酸化ハフニウム、酸化ハフニウムケイ素、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムケイ素、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、酸化鉛スカンジウムタンタルおよびニオブ酸鉛亜鉛よりなる群から選択される物質を含む、請求項1記載の方法。
- 前記窒化二酸化ケイ素層を形成するために急速熱窒化プロセスが適用され、該急速熱窒化プロセスは前記二酸化ケイ素層を少なくとも約980°Cの温度でアンモニアに曝露することを含む、請求項1記載の方法。
- 前記窒化二酸化ケイ素層が約10オングストローム未満の厚さであり;
前記犠牲層が約500オングストロームないし約1100オングストロームの厚さであり、ポリシリコンを含んでおり;
前記犠牲層の除去が、該犠牲層を水酸化物源を含む水溶液に曝露することによって行われ;
前記高誘電率ゲート誘電体層が約5オングストロームないし約20オングストロームの厚さである、
請求項1記載の方法。 - 前記金属ゲート電極が、ハフニウム、ジルコニウム、チタン、タンタル、アルミニウム、金属炭化物、アルミニウム化物、ルテニウム、パラジウム、白金、コバルト、ニッケルおよび伝導性金属酸化物よりなる群から選択される物質を含む、請求項1記載の方法。
- 半導体デバイスを作成する方法であって:
基板上に二酸化ケイ素層を形成する段階と;
前記二酸化ケイ素層に窒素を加えて窒化二酸化ケイ素層を形成する段階と;
前記窒化二酸化ケイ素層の上にポリシリコン含有層を形成する段階と;
前記ポリシリコン含有層の上に硬マスク層を形成する段階と;
前記硬マスク層、前記ポリシリコン含有層および前記窒化二酸化ケイ素層をエッチングして、パターン化されたポリシリコン含有層およびパターン化された窒化二酸化ケイ素層を覆う硬マスクを形成する段階と;
前記パターン化されたポリシリコン含有層および前記パターン化された窒化二酸化ケイ素層の相反する側に第一のスペーサーおよび第二のスペーサーを形成する段階と;
前記パターン化されたポリシリコン含有層を、水酸化物源を含む水溶液に曝露して前記パターン化されたポリシリコン含有層を除去し、その際前記窒化二酸化ケイ素層を保持し、前記第一のスペーサーと前記第二のスペーサーとの間に位置する溝を生成する段階と;
前記パターン化された窒化二酸化ケイ素層の上で前記溝の中に高誘電率ゲート誘電体層を形成する段階と;
前記高誘電率ゲート誘電体層の上に金属ゲート電極を形成する段階、
とを有する方法。 - 前記窒化二酸化ケイ素層が約10オングストローム未満の厚さであり;
前記ポリシリコン含有層が約500オングストロームないし約1100オングストロームの厚さであり;
前記高誘電率ゲート誘電体層が約5オングストロームないし約20オングストロームの厚さである、
請求項6記載の方法。 - 前記高誘電率ゲート誘電体層が、酸化ハフニウム、酸化ハフニウムケイ素、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムケイ素、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、酸化鉛スカンジウムタンタルおよびニオブ酸鉛亜鉛よりなる群から選択される物質を含み、
前記金属ゲート電極が、ハフニウム、ジルコニウム、チタン、タンタル、アルミニウム、金属炭化物、アルミニウム化物、ルテニウム、パラジウム、白金、コバルト、ニッケルおよび伝導性金属酸化物よりなる群から選択される物質を含む金属層を含む、
請求項6記載の方法。 - 前記金属層が、ハフニウム、ジルコニウム、チタン、タンタル、アルミニウム、金属炭化物およびアルミニウム化物よりなる群から選択される物質を含み、約3.9eVないし約4.2eVの仕事関数をもつ、
請求項8記載の方法。 - 前記金属層が、ルテニウム、パラジウム、白金、コバルト、ニッケルおよび伝導性金属酸化物よりなる群から選択される物質を含む金属層を含み、約4.9eVないし約5.2eVの仕事関数をもつ、
請求項8記載の方法。 - 半導体デバイスを作成する方法であって:
基板上に二酸化ケイ素層を形成する段階と;
前記二酸化ケイ素層に窒素を加えて窒化二酸化ケイ素層を形成する段階と;
前記窒化二酸化ケイ素層の上にポリシリコン含有層を形成する段階と;
前記ポリシリコン含有層の上に窒化ケイ素含有層を形成する段階と;
前記窒化ケイ素含有層、前記ポリシリコン含有層および前記窒化二酸化ケイ素層をエッチングして、第一および第二のパターン化されたポリシリコン含有層ならびに第一および第二のパターン化された窒化二酸化ケイ素層を覆う第一および第二の窒化ケイ素含有硬マスクを形成する段階と;
前記第一のパターン化されたポリシリコン含有層および前記第一のパターン化された窒化二酸化ケイ素層の相反する側に第一のスペーサーおよび第二のスペーサーを形成し、前記第二のパターン化されたポリシリコン含有層および前記第二のパターン化された窒化二酸化ケイ素層の相反する側に第三のスペーサーおよび第四のスペーサーを形成する段階と;
前記第一および第二のパターン化されたポリシリコン含有層から前記第一および第二の窒化ケイ素含有硬マスクを除去する段階と;
前記第一および第二のパターン化されたポリシリコン含有層を、水酸化物源を含む水溶液に曝露して前記第一および第二のパターン化されたポリシリコン含有層を除去し、その際前記第一および第二の窒化二酸化ケイ素層を保持し、前記第一のスペーサーと前記第二のスペーサーとの間に位置する第一の溝および前記第三のスペーサーと前記第四のスペーサーとの間に位置する第二の溝を生成する段階と;
前記第一および第二の窒化二酸化ケイ素層の上で前記第一および第二の溝の中に高誘電率ゲート誘電体層を形成する段階と;
前記高誘電率ゲート誘電体層の上に金属層を形成する段階と;
前記金属層の上に、マスキング層であって、該マスキング層の第一の部分は前記高誘電率ゲート誘電体層の第一の部分を覆い、該マスキング層の第二の部分は前記高誘電率ゲート誘電体層の第二の部分を覆うようなマスキング層を形成する段階と;
前記マスキング層の前記第一の部分を保持しつつ前記マスキング層の前記第二の部分を除去して前記金属層の部分を露出させる段階と;
前記金属層の露出した部分を除去して、前記高誘電率ゲート誘電体層の前記第一の部分を覆うが、前記高誘電率ゲート誘電体層の前記第二の部分は覆わない第一の金属層を生成する段階と;
前記マスキング層の前記第一の部分を除去する段階と;
前記第一の金属層の上および前記高誘電率ゲート誘電体層の前記第二の部分の上に、前記第一の金属層を覆い、前記高誘電率ゲート誘電体層の前記第二の部分を覆う第二の金属層を形成する段階、
とを有する方法。 - 前記高誘電率ゲート誘電体層が約5オングストロームないし約20オングストロームの厚さであり、酸化ハフニウム、酸化ハフニウムケイ素、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムケイ素、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、酸化鉛スカンジウムタンタルおよびニオブ酸鉛亜鉛よりなる群から選択される物質を含む、請求項11記載の方法。
- 前記第一の金属層が、ルテニウム、パラジウム、白金、コバルト、ニッケルおよび伝導性金属酸化物よりなる群から選択される金属を含み、約4.9eVないし約5.2eVの仕事関数をもち、
前記第二の金属ゲート電極が、ハフニウム、ジルコニウム、チタン、タンタル、アルミニウム、金属炭化物およびアルミニウム化物よりなる群から選択される金属を含み、約3.9eVないし約4.2eVの仕事関数をもつ、
請求項11記載の方法。 - 前記第一の金属層が約50ないし約100オングストロームの厚さのp型金属層を含み、前記第二の金属層が約50ないし約100オングストロームの厚さのn型金属層を含む請求項11記載の方法であって、さらに前記n型金属層の上に充填金属を形成する段階を有する、請求項11記載の方法。
- 前記充填金属が、窒化チタン、タングステン、チタン、アルミニウム、タンタル、窒化タンタル、コバルト、銅およびニッケルよりなる群から選択される、請求項14記載の方法。
- 前記窒化二酸化ケイ素層を形成するために急速熱窒化プロセスが適用され、該急速熱窒化プロセスは前記二酸化ケイ素層を少なくとも約980°Cの温度でアンモニアに曝露することを含む、請求項11記載の方法。
- 前記窒化シリコン含有層が約800ないし約1000オングストロームの厚さであり、前記マスキング層がスピンオングラスを含む、請求項11記載の方法。
- 前記第一および第二のパターン化されたポリシリコン含有層の除去が、前記第一および第二のパターン化されたポリシリコン含有層を、体積比で約0.1パーセントないし約10パーセントの、水酸化アンモニウムおよびテトラエチルアンモニウムヒドロキシドよりなる群から選択される水酸化物源を含む水溶液に曝露することにより行われる、請求項11記載の方法。
- 前記第一および第二のパターン化されたポリシリコン含有層が、約20°Cないし約30°Cの温度の前記水溶液に曝露され、前記水溶液は脱イオン水中に体積比で約0.1パーセントないし約5パーセントの水酸化アンモニウムを含むものであり、前記第一および第二のパターン化されたポリシリコン含有層が前記水溶液に曝露される間、約700kHzないし約1000kHzの周波数の音響エネルギーが、約3ないし約8ワット/cm2の散逸で加えられる、請求項18記載の方法。
- 前記第一および第二のパターン化されたポリシリコン含有層が、約20°Cないし約30°Cの温度で少なくとも約10分間、前記水溶液に曝露され、前記水溶液は脱イオン水中に体積比で約2パーセントないし約10パーセントのテトラエチルアンモニウムヒドロキシドを含むものである、請求項18記載の方法。
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GB2436047A (en) | 2007-09-12 |
GB2436047B (en) | 2011-03-16 |
GB0712808D0 (en) | 2007-08-08 |
WO2006063269A2 (en) | 2006-06-15 |
CN101099241A (zh) | 2008-01-02 |
TWI310588B (en) | 2009-06-01 |
US20060121678A1 (en) | 2006-06-08 |
TW200639947A (en) | 2006-11-16 |
WO2006063269A3 (en) | 2006-09-21 |
KR20070086471A (ko) | 2007-08-27 |
US7381608B2 (en) | 2008-06-03 |
CN101099241B (zh) | 2011-07-06 |
DE112005003119T5 (de) | 2008-04-17 |
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