JP2008515229A - 後工程のための均一な銅相互接続部及び形成方法 - Google Patents
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 187
- 239000010949 copper Substances 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000012805 post-processing Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 claims abstract description 109
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 10
- 210000001787 dendrite Anatomy 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
【解決手段】 不純物含有銅シード層(440)を備える相互接続部によって、後工程半導体デバイスの銅相互接続部の縁の欠陥が緩和される。不純物含有銅シード層(440)が障壁層(230)を覆い、障壁層(230)が開口部を有する絶縁層(115)を覆う。電気めっき銅が絶縁層(115)の開口部を埋める。化学的機械研磨により、障壁層(230)と、電気めっき銅浴から得られた不純物含有銅シード層(440)と、電気めっき銅とが、絶縁層(115)に平坦化される。
【選択図】 図4
Description
Claims (20)
- 銅相互接続部であって、
或る量の不純物を含有する不純物含有銅ソースから得られ、下にある絶縁層(115)の中への銅の実質的な拡散を防止する障壁層(230)の上に堆積された、不純物含有銅シード層(440)と、
或る量の不純物を含有する不純物含有銅ソースから得られ、下にある前記絶縁層(115)の開口部を埋める、不純物含有銅(350)と、
を含む銅相互接続部。 - 前記不純物含有銅シード層(440)の前記銅ソースが、前記不純物含有銅(350)の前記銅ソースに等しい、請求項1に記載の銅相互接続部。
- 前記不純物の含有量が、前記不純物含有銅シード層(440)及び前記不純物含有銅(350)の少なくとも1つの0.001重量%以上1.20重量%以下を占める、請求項1に記載の銅相互接続部。
- 堆積前に前記不純物含有銅シード層(440)中の前記不純物含有銅が前記不純物含有銅(350)に実質的に等しい、請求項1に記載の銅相互接続部。
- 前記不純物含有銅ソース中の前記銅が、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項1に記載の銅相互接続部。
- 銅相互接続部を形成する方法であって、
或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅シード層(440)を、下にある絶縁層(115)の開口部の内部を覆い、下にある前記絶縁層(115)の中への前記銅の実質的な拡散を防止する障壁層(230)の上に堆積するステップと、
前記開口部を、或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅(350)で埋めるステップと、
を含む方法。 - 前記不純物含有銅シード層(440)の前記銅シード・ソースが前記不純物含有銅(350)の前記銅シード・ソースに等しい、請求項6に記載の方法。
- 前記不純物の含有量が、前記不純物含有銅シード層(440)及び前記不純物含有銅(350)の少なくとも1つの0.001重量%以上1.20重量%以下を占める、請求項6に記載の方法。
- 前記不純物含有銅シード・ソースが、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項6に記載の方法。
- 堆積前に前記不純物含有銅シード層(440)中の前記不純物含有銅が前記不純物含有銅(350)に実質的に等しい、請求項6に記載の方法。
- 前記不純物含有銅シード層(440)が、スパッタリング、PVD、CVD、IPVD、及びALDの少なくとも1つによって堆積される、請求項6に記載の方法。
- 前記不純物含有銅シード層(440)、前記障壁層(230)及び前記不純物含有銅(350)を、前記不純物含有銅シード層(440)、前記障壁層(230)及び前記不純物含有銅(350)が前記絶縁層(115)と平坦化されるまで化学的機械研磨するステップをさらに含む、請求項6に記載の方法。
- 銅相互接続部であって、
開口部を有する絶縁層(115)と、
下にある前記絶縁層(115)上に堆積され前記開口部の内部を覆い、下にある前記絶縁層(115)の中への銅の実質的な拡散を防止する、障壁層(230)と、
或る量の不純物を含有する不純物含有銅ソースから得られ、前記障壁層(230)上に堆積され前記開口部を埋める、不純物含有銅シード(350)と、
を備えた銅相互接続部。 - 前記不純物の含有量が、前記不純物含有銅シード(350)の0.001重量%以上1.20重量%以下を占める、請求項13に記載の銅相互接続部。
- 前記不純物含有銅ソースから得られる前記不純物含有銅(350)が、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項13に記載の銅相互接続部。
- 銅相互接続部を形成する方法であって、
絶縁層(115)を堆積するステップと、
前記絶縁層(115)に開口部をエッチングするステップと、
前記絶縁層(115)への前記銅の実質的な拡散を防止する障壁層(230)を、前記開口部の内部を覆って前記絶縁層(115)内に堆積するステップと、
前記開口部を、或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅シード(350)で埋めるステップと、
を含む方法。 - 前記不純物の含有量が、前記不純物含有銅シードの0.001重量%以上1.20重量%以下を占める、請求項16に記載の方法。
- 前記不純物含有銅シード(350)及び前記障壁層(230)を、前記不純物含有銅シード(350)及び前記障壁層(230)が前記絶縁層(115)と平坦化されるまで化学的機械研磨するステップをさらに含む、請求項16に記載の方法。
- 前記不純物含有銅シード・ソースが、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項16に記載の方法。
- 前記不純物含有銅シード(350)が、スパッタリング、PVD、CVD、IPVD、及びALDの少なくとも1つによって堆積される、請求項16に記載の方法。
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US10/711,700 US20060071338A1 (en) | 2004-09-30 | 2004-09-30 | Homogeneous Copper Interconnects for BEOL |
PCT/US2005/033539 WO2006039138A1 (en) | 2004-09-30 | 2005-09-20 | Homogeneous copper interconnects for beol |
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US (2) | US20060071338A1 (ja) |
EP (1) | EP1800335A4 (ja) |
JP (1) | JP2008515229A (ja) |
KR (1) | KR20070067067A (ja) |
CN (1) | CN101023514A (ja) |
TW (1) | TW200618176A (ja) |
WO (1) | WO2006039138A1 (ja) |
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JP2014534609A (ja) * | 2011-09-14 | 2014-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属相互接続構造体およびそれを形成する方法(銅相互接続構造体における微細構造変更) |
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US10586732B2 (en) | 2016-06-30 | 2020-03-10 | International Business Machines Corporation | Via cleaning to reduce resistance |
US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
US11599804B2 (en) * | 2020-04-17 | 2023-03-07 | Disney Enterprises, Inc. | Automated annotation of heterogeneous content |
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JP2014534609A (ja) * | 2011-09-14 | 2014-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属相互接続構造体およびそれを形成する方法(銅相互接続構造体における微細構造変更) |
Also Published As
Publication number | Publication date |
---|---|
WO2006039138A1 (en) | 2006-04-13 |
KR20070067067A (ko) | 2007-06-27 |
US20060071338A1 (en) | 2006-04-06 |
EP1800335A4 (en) | 2008-01-02 |
CN101023514A (zh) | 2007-08-22 |
EP1800335A1 (en) | 2007-06-27 |
US20080156636A1 (en) | 2008-07-03 |
TW200618176A (en) | 2006-06-01 |
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