JP2008511974A - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
- Publication number
- JP2008511974A JP2008511974A JP2007528623A JP2007528623A JP2008511974A JP 2008511974 A JP2008511974 A JP 2008511974A JP 2007528623 A JP2007528623 A JP 2007528623A JP 2007528623 A JP2007528623 A JP 2007528623A JP 2008511974 A JP2008511974 A JP 2008511974A
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- base plate
- substrate
- semiconductor module
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000003825 pressing Methods 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
1’ モジュール
2、3、4、5、6、7 基板
2a、2b、2c、2d 基板の角
8、9 半導体チップ
10 上面
11 ベースプレート
11a、11b 長辺部
12 行
13、14 行
15、16 ホール(押圧装置)
15’、16’ ホール(押圧装置)
17、18 中央領域
19、20 長手方向の沿った辺
21、22 行
23 基板
25、26 (ホール)押圧装置
28 パワー半導体
(a)、(b) 距離
Claims (3)
- 少なくとも4つの各基板(2、3、4、5、6、7)が上に配置された熱伝導性のベースプレート(11)を備え、各基板は、動作時に発熱する少なくとも1つのパワー半導体デバイス(8、9)を備えている、パワー半導体モジュール(1)であって、
上記各基板(2、3、4、5、6、7)は、単一の行(12)内において、上記ベースプレート(11)上にそれぞれ配置されており、
上記ベースプレート(11)を冷却領域に押圧するために用いられる各押圧装置(15、16)が、それぞれ、上記ベースプレート(11)における、上記行(12)の長手方向に対して平行な2つの各長辺部(11a、11b)に、かつ、上記基板の近傍の位置に設けられている、パワー半導体モジュール(1)。 - 上記各基板(2、3、4、5、6、7)は、実質的に四角形であり、
押圧装置(15、16)が、上記基板の各角の領域(2a、2b、2c、2d)にそれぞれ設けられている、請求項1に記載のパワー半導体モジュール。 - 各押圧装置(15’、16’)が、上記基板における、上記長手方向に沿った各辺(19、20)の中央領域(17、18)に、上記各辺の近傍に位置し、かつ互いに向かい合う位置にそれぞれ設けられている、請求項1に記載のパワー半導体モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004042367A DE102004042367B4 (de) | 2004-09-01 | 2004-09-01 | Leistungshalbleitermodul |
DE102004042367.9 | 2004-09-01 | ||
PCT/EP2005/005505 WO2006024330A1 (de) | 2004-09-01 | 2005-05-20 | Leistungshalbleitermodul |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008511974A true JP2008511974A (ja) | 2008-04-17 |
JP4759716B2 JP4759716B2 (ja) | 2011-08-31 |
Family
ID=34970880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007528623A Active JP4759716B2 (ja) | 2004-09-01 | 2005-05-20 | パワー半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US7968988B2 (ja) |
EP (1) | EP1784863A1 (ja) |
JP (1) | JP4759716B2 (ja) |
DE (1) | DE102004042367B4 (ja) |
WO (1) | WO2006024330A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010086995A (ja) * | 2008-09-29 | 2010-04-15 | Sanyo Electric Co Ltd | 回路装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10352671A1 (de) | 2003-11-11 | 2005-06-23 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Leistungsmodul |
US10134718B2 (en) * | 2015-07-09 | 2018-11-20 | Mitsubishi Electric Corporation | Power semiconductor module |
JP7070661B2 (ja) | 2018-03-20 | 2022-05-18 | 富士電機株式会社 | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326711A (ja) * | 1994-05-31 | 1995-12-12 | Mitsubishi Electric Corp | 半導体装置 |
JPH08195471A (ja) * | 1995-01-17 | 1996-07-30 | Hitachi Ltd | モジュール型半導体装置 |
WO2000068992A1 (en) * | 1999-05-11 | 2000-11-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JP2003009546A (ja) * | 2001-06-20 | 2003-01-10 | Hitachi Ltd | 電力変換装置及びそれを備えた移動体 |
WO2003021680A2 (de) * | 2001-09-01 | 2003-03-13 | Eupec Gmbh | Leistungshalbleitermodul |
JP2004235175A (ja) * | 2003-01-28 | 2004-08-19 | Hitachi Ltd | パワー半導体モジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0584668B1 (de) * | 1992-08-26 | 1996-12-18 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleiter-Modul |
DE4338107C1 (de) * | 1993-11-08 | 1995-03-09 | Eupec Gmbh & Co Kg | Halbleiter-Modul |
DE59509057D1 (de) * | 1994-11-07 | 2001-04-05 | Eupec Gmbh & Co Kg | Brücken-Modul |
KR100272737B1 (ko) * | 1998-01-09 | 2001-01-15 | 윤종용 | 릴인쇄회로기판및그를이용한칩온보드패키지 |
DE19942915A1 (de) * | 1999-09-08 | 2001-03-15 | Still Gmbh | Leistungshalbleitermodul |
US6416332B1 (en) * | 2000-12-20 | 2002-07-09 | Nortel Networks Limited | Direct BGA socket for high speed use |
DE10139287A1 (de) * | 2001-08-09 | 2003-03-13 | Bombardier Transp Gmbh | Halbleitermodul |
DE10231219C1 (de) * | 2002-07-11 | 2003-05-22 | Semikron Elektronik Gmbh | Druckkontaktiertes Halbleiterrelais |
-
2004
- 2004-09-01 DE DE102004042367A patent/DE102004042367B4/de active Active
-
2005
- 2005-05-20 WO PCT/EP2005/005505 patent/WO2006024330A1/de active Application Filing
- 2005-05-20 JP JP2007528623A patent/JP4759716B2/ja active Active
- 2005-05-20 EP EP05754424A patent/EP1784863A1/de not_active Withdrawn
-
2007
- 2007-03-01 US US11/680,881 patent/US7968988B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326711A (ja) * | 1994-05-31 | 1995-12-12 | Mitsubishi Electric Corp | 半導体装置 |
JPH08195471A (ja) * | 1995-01-17 | 1996-07-30 | Hitachi Ltd | モジュール型半導体装置 |
WO2000068992A1 (en) * | 1999-05-11 | 2000-11-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JP2003009546A (ja) * | 2001-06-20 | 2003-01-10 | Hitachi Ltd | 電力変換装置及びそれを備えた移動体 |
WO2003021680A2 (de) * | 2001-09-01 | 2003-03-13 | Eupec Gmbh | Leistungshalbleitermodul |
JP2004235175A (ja) * | 2003-01-28 | 2004-08-19 | Hitachi Ltd | パワー半導体モジュール |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010086995A (ja) * | 2008-09-29 | 2010-04-15 | Sanyo Electric Co Ltd | 回路装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2006024330A1 (de) | 2006-03-09 |
EP1784863A1 (de) | 2007-05-16 |
DE102004042367B4 (de) | 2008-07-10 |
DE102004042367A1 (de) | 2006-03-09 |
JP4759716B2 (ja) | 2011-08-31 |
US20070205500A1 (en) | 2007-09-06 |
US7968988B2 (en) | 2011-06-28 |
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