JP2008507152A - 格子界面を有する画素セル - Google Patents
格子界面を有する画素セル Download PDFInfo
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- JP2008507152A JP2008507152A JP2007522578A JP2007522578A JP2008507152A JP 2008507152 A JP2008507152 A JP 2008507152A JP 2007522578 A JP2007522578 A JP 2007522578A JP 2007522578 A JP2007522578 A JP 2007522578A JP 2008507152 A JP2008507152 A JP 2008507152A
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- 239000000758 substrate Substances 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- VRZFDJOWKAFVOO-UHFFFAOYSA-N [O-][Si]([O-])([O-])O.[B+3].P Chemical compound [O-][Si]([O-])([O-])O.[B+3].P VRZFDJOWKAFVOO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
(1) 反射=|X−Y|2/(X+Y)2;
式中、Xは酸化層34の屈折率を表し、Yは基板14の屈折率を表す。前述の例では、反射パーセンテージは|4.0−1.6|2/(4.0+1.6)2〜18%である。したがって、フォトセンサ12は、フォトセンサ12がさらされる入射光36の約18%を捕捉しそこなう。これは望ましくない。
Claims (50)
- シリコン基板の中のフォトセンサと、
前記フォトセンサの上に備えられた酸化層であって、前記酸化層と前記基板が格子界面を定める、酸化層と、
を備える画素セル。 - 前記格子界面は半長方形格子である、請求項1に記載の画素セル。
- 前記半長方形格子は約100nmから約1000nmまでの範囲内の周期を有する、請求項2に記載の画素セル。
- 前記格子は340nmの周期を有する、請求項3に記載の画素セル。
- 前記半長方形格子は約10nmから約250nmまでの範囲内の深さを有する、請求項2に記載の画素セル。
- 前記格子は100nmの深さを有する、請求項5に記載の画素セル。
- 前記格子界面はブレーズド格子である、請求項1に記載の画素セル。
- 前記ブレーズド格子は約100nmから約1000nmの範囲内の周期を有する、請求項7に記載の画素セル。
- 前記ブレーズド格子は第1深さおよび第2深さを有する溝を有する、請求項7に記載の画素セル。
- 前記第1および第2深さは約10nmから約250nmまでの範囲内の深さを有する、請求項9に記載の画素セル。
- 前記フォトセンサはフォトダイオードである、請求項1に記載の画素セル。
- 前記フォトセンサは第1ドープド領域および第2ドープド領域を有するフォトダイオードである、請求項11に記載の画素セル。
- 前記第1ドープド領域はp型領域である、請求項12に記載の画素セル。
- 前記第2ドープド領域はn型領域である、請求項13に記載の画素セル。
- 前記フォトセンサはピンフォトダイオードである、請求項11に記載の画素セル。
- 前記酸化層の上方に材料層をさらに備える、請求項1に記載の画素セル。
- 前記材料層および前記酸化層は第2格子界面を定める、請求項16に記載の画素セル。
- 前記材料層はオルトケイ酸テトラエチル(TEOS)層である、請求項16に記載の画素セル。
- 前記TEOS層の上方のホウ素−リン−ケイ酸塩ガラス(BPSG)層をさらに備える、請求項18に記載の画素セル。
- 画素セルのアレイを有する集積回路であって、
前記アレイの少なくとも1つの画素セルは、
シリコン基板であって、その中に形成されるフォトセンサと、前記フォトセンサの上方に配置された複数の溝を有する、シリコン基板と、
前記複数の溝の中に且つ上方に備えられた酸化層であり、前記酸化層と前記溝の間に格子界面を形成する、酸化層と、
を有する、集積回路。 - 前記複数の溝は、ほぼ半長方形の形を有する、請求項20に記載の集積回路。
- 前記半長方形格子は約100nmから約1000nmまでの範囲内の周期を有する、請求項21に記載の集積回路。
- 前記半長方形格子は340nmの周期を有する、請求項22に記載の集積回路。
- 前記複数の溝の少なくとも1つは約10nmから約250nmまでの範囲内の所定の深さを有する、請求項21に記載の集積回路。
- 前記溝は100nmの深さを有する、請求項24に記載の集積回路。
- 前記格子界面はブレーズド格子である、請求項20に記載の集積回路。
- 第1側壁領域は第1深さを有し、第2側壁領域は第2深さを有し、第3側壁領域は第3深さを有する、請求項26に記載の集積回路。
- 前記第1、第2、および第3深さは約10nmから約250nmまでの範囲内にある、請求項27に記載の集積回路。
- 前記フォトセンサはフォトダイオードである、請求項20に記載の集積回路。
- 前記フォトダイオードはピンフォトダイオードである、請求項29に記載の集積回路。
- プロセッサと、
前記プロセッサと結合された撮像素子と、
読み出し回路と、
を備える画像処理システムであり、
前記撮像素子は複数の画素セルを含む撮像アレイを備え、
少なくとも1つの画素セルは、
シリコン基板の中のフォトセンサと、
前記フォトセンサの上方の酸化層であって、前記酸化層と前記基板は格子界面を定める、酸化層と、
を備え、
前記読み出し回路は、前記半導体基板内にあって、前記フォトセンサからの信号を提供する、
画像処理システム。 - 前記格子界面は半長方形格子である、請求項31に記載の画像処理システム。
- 前記格子界面はブレーズド格子である、請求項31に記載の画像処理システム。
- 前記画素セルは前記酸化層の上方の材料層をさらに備える、請求項31に記載の画像処理システム。
- 前記材料層および前記酸化層は第2格子界面を定める、請求項34に記載の画像処理システム。
- 前記フォトセンサはフォトダイオードである、請求項31に記載の画像処理システム。
- 前記フォトセンサはピンフォトダイオードである、請求項31に記載の画像処理システム。
- 画素セルを形成する方法であって、
シリコン基板の中のうちのフォトセンサ専用のエリアの上方に、複数の溝を形成し、
前記複数の溝の内部及び上方に酸化膜を備えさせ、前記酸化膜と前記複数の溝との間に格子界面を形成する、
方法。 - さらに、前記専用エリアの中の前記シリコン基板の中にフォトセンサを形成する、請求項38に記載の方法。
- フォトセンサの形成は、p型およびn型ドーパントを有する前記シリコン基板をドープする、請求項39に記載の方法。
- 前記ドーピングの結果としてピンフォトダイオードとなる、請求項40に記載の方法。
- 前記複数の溝は前記シリコン基板をエッチングすることによって形成される、請求項38に記載の方法。
- 前記シリコン基板の前記エッチングは反応性イオンエッチングによって行われる、請求項42に記載の方法。
- 前記シリコン基板の前記エッチングは化学エッチングによって行われる、請求項42に記載の方法。
- 前記複数の溝は、前記シリコン基板の上方にフォトレジストを備えさえること、且つ、複数のシリコン列を形成すること、によって形成される、請求項38に記載の方法。
- 前記複数のシリコン列はエピタキシャル成長によって形成される、請求項45に記載の方法。
- 前記複数の溝は、ほぼ半長方形の形として形成される、請求項38に記載の方法。
- 前記複数の溝のうちの少なくとも1つは、約10nmから約250nmまでの範囲内の所定の深さを有するように形成される、請求項38に記載の方法。
- 前記格子界面は約100nmから約1000nmまでの範囲内の所定の周期を有する、請求項38に記載の方法。
- 前記複数の溝のうちの少なくとも1つは、前記酸化層と前記基板の間のブレーズド格子界面を定めるように、少なくとも3つの側壁領域を有するように形成される、請求項38に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/893,276 | 2004-07-19 | ||
US10/893,276 US7880255B2 (en) | 2004-07-19 | 2004-07-19 | Pixel cell having a grated interface |
PCT/US2005/025076 WO2006019968A1 (en) | 2004-07-19 | 2005-07-15 | Pixel cell having a grated interface |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008507152A true JP2008507152A (ja) | 2008-03-06 |
JP5460959B2 JP5460959B2 (ja) | 2014-04-02 |
Family
ID=34981835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007522578A Active JP5460959B2 (ja) | 2004-07-19 | 2005-07-15 | 格子界面を有する画素セル |
Country Status (7)
Country | Link |
---|---|
US (2) | US7880255B2 (ja) |
EP (1) | EP1779432B1 (ja) |
JP (1) | JP5460959B2 (ja) |
KR (1) | KR100854900B1 (ja) |
CN (1) | CN101019233A (ja) |
TW (1) | TWI297950B (ja) |
WO (1) | WO2006019968A1 (ja) |
Cited By (3)
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JP2020061576A (ja) * | 2013-07-03 | 2020-04-16 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
JP2021097238A (ja) * | 2015-06-05 | 2021-06-24 | ソニーグループ株式会社 | 光検出装置、および測距センサ |
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CN101019233A (zh) | 2007-08-15 |
EP1779432A1 (en) | 2007-05-02 |
US7880255B2 (en) | 2011-02-01 |
EP1779432B1 (en) | 2012-10-10 |
US20060011955A1 (en) | 2006-01-19 |
KR100854900B1 (ko) | 2008-08-28 |
US8101454B2 (en) | 2012-01-24 |
TWI297950B (en) | 2008-06-11 |
KR20070042182A (ko) | 2007-04-20 |
US20060081900A1 (en) | 2006-04-20 |
WO2006019968A1 (en) | 2006-02-23 |
JP5460959B2 (ja) | 2014-04-02 |
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