JP2008311686A5 - - Google Patents

Download PDF

Info

Publication number
JP2008311686A5
JP2008311686A5 JP2008250994A JP2008250994A JP2008311686A5 JP 2008311686 A5 JP2008311686 A5 JP 2008311686A5 JP 2008250994 A JP2008250994 A JP 2008250994A JP 2008250994 A JP2008250994 A JP 2008250994A JP 2008311686 A5 JP2008311686 A5 JP 2008311686A5
Authority
JP
Japan
Prior art keywords
gas
processing apparatus
plasma processing
flow rate
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008250994A
Other languages
Japanese (ja)
Other versions
JP4963694B2 (en
JP2008311686A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2008250994A priority Critical patent/JP4963694B2/en
Priority claimed from JP2008250994A external-priority patent/JP4963694B2/en
Publication of JP2008311686A publication Critical patent/JP2008311686A/en
Publication of JP2008311686A5 publication Critical patent/JP2008311686A5/ja
Application granted granted Critical
Publication of JP4963694B2 publication Critical patent/JP4963694B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (7)

処理室と、前記処理室に電磁波を放射するためのアンテナと、前記処理室内にガスを供給するためのシャワープレートと、前記シャワープレートに供給された前記ガスを分散させるガス分散板と、前記ガス分散板にガスを供給するガス供給手段と、前記処理室内を減圧する真空排気手段と、被処理体を載置する電極と、前記アンテナに高周波電力を供給する電磁波放射電源とを有するプラズマ処理装置であって、
前記ガス供給手段は、複数のガス供給源から供給されたガス種毎に設けられたガス流量調節器を有し、
前記ガス分散板は、内側の領域と外側の領域に分割され、
ＣＤ寸法制御用の少なくとも１種類のガス以外の複数のガスからなる混合ガスである第１のガスの流量を所定のガス流量比に制御し、前記所定のガス流量比に制御されたガスを分配させる第一のガス分配手段と、前記ＣＤ寸法制御用の少なくとも１種類のガスである第２のガスの流量を所定のガス流量比に制御し、前記所定のガス流量比に制御されたガスを分配させる第二のガス分配手段とを備え、
前記第一のガス分配手段により分岐された一方の第１のガスが前記ガス分散板の内側の領域に、前記第一のガス分配手段により分岐された他方の第１のガスが前記ガス分散板の外側の領域にそれぞれ供給され、かつ、前記第二のガス分配手段により分岐された一方の第２のガスが前記ガス分散板の内側の領域に、前記第二のガス分配手段により分岐された他方の第２のガスが前記ガス分散板の外側の領域にそれぞれ供給されることによって、
前記シャワープレートの内側領域と外側領域からそれぞれ供給される前記第２のガスの流量を前記第１のガスとは独立に制御できることを特徴とするプラズマ処理装置。 A processing chamber, an antenna for radiating electromagnetic waves into the processing chamber, and the shower plate for supplying a gas into the processing chamber, a gas dispersion plate for dispersing the gas supplied to the shower plate, the gas and Ruga scan supply means to supply gas to the distribution plate, and the vacuum evacuation means for depressurizing the processing chamber, and electrodes for placing the object to be processed, and that electromagnetic waves radiated power to supply a high frequency power to the antenna a chromatic plasma processing apparatus,
The gas supply means includes a gas flow rate controller provided for each gas type supplied from a plurality of gas supply sources,
The gas distribution plate is divided into an inner region and an outer region,
The flow rate of the first gas, which is a mixed gas composed of a plurality of gases other than at least one kind of gas for CD dimension control, is controlled to a predetermined gas flow rate ratio, and the gas controlled to the predetermined gas flow rate ratio is distributed. Controlling the flow rate of the second gas, which is at least one kind of gas for CD dimension control, to a predetermined gas flow rate ratio, and the gas controlled to the predetermined gas flow rate ratio. A second gas distribution means for distributing,
One first gas branched by the first gas distribution means is in an area inside the gas dispersion plate, and the other first gas branched by the first gas distribution means is the gas distribution plate. One of the second gases supplied to the outer region of the gas and branched by the second gas distribution unit is branched by the second gas distribution unit to the inner region of the gas dispersion plate. By supplying the other second gas to the region outside the gas dispersion plate,
The plasma processing apparatus , wherein a flow rate of the second gas supplied from an inner region and an outer region of the shower plate can be controlled independently of the first gas . 請求項１記載のプラズマ処理装置において、
前記ＣＤ寸法制御用の少なくとも１種類のガスは、Ｏ ２ ガスまたはＮ ２ ガス、あるいはＯ ２ ガス及びＮ ２ ガスであることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The plasma processing apparatus, wherein the at least one kind of gas for CD dimension control is O 2 gas or N 2 gas, or O 2 gas and N 2 gas . 請求項１記載のプラズマ処理装置において、
前記第一のガス分配手段は、ガス分配器を有し、前記第二のガス分配手段は、前記Ｏ ２ ガスまたはＮ ２ ガス、あるいはＯ ２ ガス及びＮ ２ ガスがそれぞれ複数のガス流量調整器で供給されることにより、前記Ｏ ２ ガスまたはＮ ２ ガス、あるいはＯ ２ ガス及びＮ ２ ガスを分配することを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The first gas distribution unit includes a gas distributor, and the second gas distribution unit includes a plurality of gas flow regulators each including the O 2 gas or the N 2 gas, or the O 2 gas and the N 2 gas. The plasma processing apparatus distributes the O 2 gas or the N 2 gas, or the O 2 gas and the N 2 gas by being supplied at the same time . 請求項１記載のプラズマ処理装置において、
前記アンテナは内側領域と外側領域に分割され、
前記電磁波放射電源は、分配器により前記アンテナの内側領域と前記アンテナの外側領域にそれぞれ高周波電力を供給することを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The antenna is divided into an inner region and an outer region,
It said electromagnetic radiation source is a plasma processing apparatus characterized by supplying each radio frequency power to the outer region of the inner region of the antenna by distributor antenna. 請求項１記載のプラズマ処理装置において、The plasma processing apparatus according to claim 1,
前記載置電極の内側領域に高周波電力を供給する第一の高周波電源と、前記載置電極の外側領域に高周波電力を供給する第二の高周波電源とを有することを特徴とするプラズマ処理装置。A plasma processing apparatus comprising: a first high-frequency power source that supplies high-frequency power to an inner region of the placement electrode; and a second high-frequency power source that supplies high-frequency power to an outer region of the placement electrode. 請求項１記載のプラズマ処理装置において、The plasma processing apparatus according to claim 1,
前記第一のガス分配手段は、ガス分配器を有することを特徴とするプラズマ処理装置。The plasma processing apparatus, wherein the first gas distribution means includes a gas distributor. 請求項１記載のプラズマ処理装置において、The plasma processing apparatus according to claim 1,
前記第一及び第二のガス分配手段は、ガス分配器を有することを特徴とするプラズマ処理装置。The plasma processing apparatus, wherein the first and second gas distribution means include a gas distributor.
JP2008250994A 2008-09-29 2008-09-29 Plasma processing equipment Active JP4963694B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008250994A JP4963694B2 (en) 2008-09-29 2008-09-29 Plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008250994A JP4963694B2 (en) 2008-09-29 2008-09-29 Plasma processing equipment

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004217118A Division JP4550507B2 (en) 2004-07-26 2004-07-26 Plasma processing equipment

Publications (3)

Publication Number Publication Date
JP2008311686A JP2008311686A (en) 2008-12-25
JP2008311686A5 true JP2008311686A5 (en) 2011-02-17
JP4963694B2 JP4963694B2 (en) 2012-06-27

Family

ID=40238942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008250994A Active JP4963694B2 (en) 2008-09-29 2008-09-29 Plasma processing equipment

Country Status (1)

Country Link
JP (1) JP4963694B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101519024B1 (en) * 2009-01-15 2015-05-12 삼성전자 주식회사 Gas Supply System For Plasma Etching Apparatus
JP7369183B2 (en) * 2018-09-26 2023-10-25 アプライド マテリアルズ インコーポレイテッド Thermal conductive spacer for plasma processing chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100935A (en) * 1984-10-23 1986-05-19 Fujitsu Ltd Dry etching equipment
US6294026B1 (en) * 1996-11-26 2001-09-25 Siemens Aktiengesellschaft Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops
JPH1116888A (en) * 1997-06-24 1999-01-22 Hitachi Ltd Etching device and operation method therefor
JP2000156370A (en) * 1998-09-16 2000-06-06 Tokyo Electron Ltd Method of plasma processing
JP2000208483A (en) * 1999-01-08 2000-07-28 Mitsubishi Electric Corp Method and system for processing wafer
JP4388627B2 (en) * 1999-07-05 2009-12-24 東京エレクトロン株式会社 Processing equipment
JP2002064084A (en) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd Gas introducing equipment for plasma treatment and plasma treating method
JP3764639B2 (en) * 2000-09-13 2006-04-12 株式会社日立製作所 Plasma processing apparatus and semiconductor device manufacturing method
JP3881307B2 (en) * 2002-12-19 2007-02-14 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP4550507B2 (en) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ Plasma processing equipment

Similar Documents

Publication Publication Date Title
JP2006041088A5 (en)
US8900402B2 (en) Semiconductor processing system having multiple decoupled plasma sources
CN102017057B (en) Plasma treatment apparatus and method for plasma-assisted treatment of substrates
US8900403B2 (en) Semiconductor processing system having multiple decoupled plasma sources
KR20180084647A (en) Plasma processing apparatus
JP2009527921A5 (en)
EP2276328B1 (en) Microwave plasma processing device
KR102618925B1 (en) Placing unit and plasma processing apparatus
JP2021093363A (en) Plasma reactor for processing a workpiece with an array of plasma point sources
KR20150108344A (en) Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device
JP2015501546A5 (en)
KR102263478B1 (en) Plasma Strip Tool With Multiple Gas Injection Zones
JP2004502318A5 (en)
SG144876A1 (en) A method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
TW201633362A (en) Plasma treatment device
US20190122863A1 (en) Plasma processing apparatus
JP2006216679A (en) Plasma processing method/device by pulse division supply and plasma cvd method
JP2008311686A5 (en)
JP2013012353A (en) Plasma processing apparatus
KR20140036224A (en) Semiconductor processing system having multiple decoupled plasma sources
KR101197020B1 (en) Substrate processing apparatus for uniform plasma discharge and method of adjusting strength of plasma discharge
JP2004200232A (en) Plasma production device
WO2011132903A3 (en) Plasma processing apparatus
KR101151225B1 (en) Capactively coupled plasma generation apparatus and capactively coupled plasma generation method
JP2004273533A (en) Plasma processing device and method therefor