JP2008306223A5 - - Google Patents

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Publication number
JP2008306223A5
JP2008306223A5 JP2008244333A JP2008244333A JP2008306223A5 JP 2008306223 A5 JP2008306223 A5 JP 2008306223A5 JP 2008244333 A JP2008244333 A JP 2008244333A JP 2008244333 A JP2008244333 A JP 2008244333A JP 2008306223 A5 JP2008306223 A5 JP 2008306223A5
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Japan
Prior art keywords
inner chamber
chamber
wafer
disposed
vacuum
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JP2008244333A
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Japanese (ja)
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JP5025609B2 (en
JP2008306223A (en
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Priority to JP2008244333A priority Critical patent/JP5025609B2/en
Priority claimed from JP2008244333A external-priority patent/JP5025609B2/en
Publication of JP2008306223A publication Critical patent/JP2008306223A/en
Publication of JP2008306223A5 publication Critical patent/JP2008306223A5/ja
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Claims (4)

真空容器を構成する外側チャンバと、処理対象のウエハが載置される試料台を内部に有し外側チャンバから取り外し可能な内側チャンバと、この試料台の下方に配置され前記内側チャンバ内を排気する排気手段と、前記内側チャンバと前記外側チャンバとの間を気密に封止するシールとを備え、これらの間の空間が真空に維持される真空処理装置。 An outer chamber that constitutes a vacuum vessel, an inner chamber that has a sample stage on which a wafer to be processed is placed and can be removed from the outer chamber, and an inner chamber that is disposed below the sample stage and evacuates the inner chamber A vacuum processing apparatus comprising: exhaust means; and a seal that hermetically seals between the inner chamber and the outer chamber, and a space between them is maintained in a vacuum. 真空容器を形成する外側チャンバと、前記外側チャンバの内側に配置され真空処理室を形成する内側チャンバと、前記内側チャンバ内に配置されウエハが載せられる試料台と、前記試料台の直下方に配置された排気手段とを有する真空処理装置において、
前記内側チャンバに配置され前記ウエハを搬送するための開口を密閉するバルブを備え、
このバルブにより前記内側チャンバ及び外側チャンバの間が気密に封止されると共にこれらの間の空間が減圧され、前記排気手段が封止された前記内側チャンバ内を排気する真空処理装置。
An outer chamber that forms a vacuum vessel, an inner chamber that is disposed inside the outer chamber and forms a vacuum processing chamber, a sample table that is disposed in the inner chamber and on which a wafer is placed, and is disposed immediately below the sample table In a vacuum processing apparatus having an exhaust means,
A valve disposed in the inner chamber for sealing an opening for transferring the wafer;
A vacuum processing apparatus in which the inner chamber and the outer chamber are hermetically sealed by the valve, the space between them is decompressed, and the inside of the inner chamber in which the exhaust unit is sealed is exhausted .
真空容器を形成する外側チャンバと、前記外側チャンバの内側に配置され処理対象のウエハに対し軸対称の形状である真空処理室を形成する内側チャンバと、前記内側チャンバ内に配置され前記ウエハが載せられる試料台と、前記試料台の直下方に配置された排気手段とを有する真空処理装置において、
前記内側チャンバに配置され前記ウエハを搬送するための開口を密閉するバルブを備え、
このバルブにより前記内側チャンバ及び外側チャンバの間が気密に封止されると共にこれらの間の空間が減圧され、前記排気手段が封止された前記内側チャンバ内を排気する真空処理装置。
An outer chamber that forms a vacuum vessel, an inner chamber that is disposed inside the outer chamber and forms a vacuum processing chamber that is symmetrical with respect to the wafer to be processed, and an inner chamber that is disposed in the inner chamber and on which the wafer is placed In a vacuum processing apparatus having a sample stage and an exhaust means disposed immediately below the sample stage,
A valve disposed in the inner chamber for sealing an opening for transferring the wafer;
A vacuum processing apparatus in which the inner chamber and the outer chamber are hermetically sealed by the valve, the space between them is decompressed, and the inside of the inner chamber in which the exhaust unit is sealed is exhausted .
内部が排気されて減圧されその内部でウエハが処理される真空容器と、この真空容器の側壁と連結され減圧された内部を前記ウエハが搬送される搬送容器と、前記真空容器内に着脱可能に配置されその内部に処理用ガスが供給されてプラズマが形成される処理室及び前記ウエハがその上に載せられる試料台とを有しその内側壁が軸対象の形状を備えた内側チャンバと、この内側チャンバの下部で前記試料台の直下方に配置されこの内側チャンバ内部を排気する排気手段と連通された排気口と、前記内側チャンバの側壁上に配置され前記ウエハが内側を搬送される開口部と、前記搬送容器の内側と前記真空容器の内側とを開放及び気密に閉塞する第一のバルブと、前記真空容器と内側チャンバとの間に配置され前記開口を開放及び気密に閉塞する第二のバルブとを備え、この第二のバルブが前記開口を閉塞して前記内側チャンバと前記真空容器との間の空間が減圧されるとともに前記排気手段が軸対象な前記内側チャンバの内部を排気する真空処理装置。 A vacuum vessel in which the inside is evacuated and decompressed, and a wafer is processed therein, a transport vessel in which the wafer is transported through the decompressed inside connected to the side wall of the vacuum vessel, and a removable container in the vacuum vessel An inner chamber having a processing chamber in which a processing gas is supplied and plasma is formed to form plasma, and a sample stage on which the wafer is placed, the inner wall of which has an axial target shape; and An exhaust port disposed below the sample stage at the lower part of the inner chamber and communicating with an exhaust means for exhausting the interior of the inner chamber, and an opening disposed on the side wall of the inner chamber and through which the wafer is transported. A first valve that opens and airtightly closes the inside of the transfer container and the inside of the vacuum container, and is disposed between the vacuum container and the inner chamber to open and airtightly close the opening. A second valve, and the second valve closes the opening to depressurize the space between the inner chamber and the vacuum vessel, and the exhaust means passes through the interior of the inner chamber. Vacuum processing equipment to exhaust .
JP2008244333A 2003-09-04 2008-09-24 Vacuum processing equipment Active JP5025609B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008244333A JP5025609B2 (en) 2003-09-04 2008-09-24 Vacuum processing equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003313200 2003-09-04
JP2003313200 2003-09-04
JP2008244333A JP5025609B2 (en) 2003-09-04 2008-09-24 Vacuum processing equipment

Related Parent Applications (1)

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JP2004258568A Division JP4522795B2 (en) 2003-09-04 2004-09-06 Vacuum processing equipment

Related Child Applications (1)

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JP2012086184A Division JP5415583B2 (en) 2003-09-04 2012-04-05 Vacuum processing equipment

Publications (3)

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JP2008306223A JP2008306223A (en) 2008-12-18
JP2008306223A5 true JP2008306223A5 (en) 2009-07-02
JP5025609B2 JP5025609B2 (en) 2012-09-12

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JP2008244333A Active JP5025609B2 (en) 2003-09-04 2008-09-24 Vacuum processing equipment
JP2010025804A Expired - Fee Related JP5215332B2 (en) 2003-09-04 2010-02-08 Vacuum processing equipment
JP2012086184A Active JP5415583B2 (en) 2003-09-04 2012-04-05 Vacuum processing equipment

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JP2010025804A Expired - Fee Related JP5215332B2 (en) 2003-09-04 2010-02-08 Vacuum processing equipment
JP2012086184A Active JP5415583B2 (en) 2003-09-04 2012-04-05 Vacuum processing equipment

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5025609B2 (en) * 2003-09-04 2012-09-12 株式会社日立ハイテクノロジーズ Vacuum processing equipment
JP5206730B2 (en) 2010-04-28 2013-06-12 株式会社デンソー Catalyst energization controller
JP6101504B2 (en) * 2013-02-14 2017-03-22 株式会社日立ハイテクノロジーズ Module inspection equipment for vacuum processing equipment
JP6463220B2 (en) * 2015-05-21 2019-01-30 東京エレクトロン株式会社 Processing system
JP6557523B2 (en) * 2015-06-19 2019-08-07 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP6650841B2 (en) * 2016-06-27 2020-02-19 東京エレクトロン株式会社 Substrate lifting mechanism, substrate mounting table and substrate processing device
JP6775432B2 (en) * 2017-01-24 2020-10-28 Sppテクノロジーズ株式会社 Vacuum transfer module and substrate processing equipment
JP6750928B2 (en) * 2019-03-01 2020-09-02 株式会社日立ハイテク Vacuum processing device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160031A (en) * 1991-12-03 1993-06-25 Kokusai Electric Co Ltd Cvd device
JPH0878392A (en) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp Plasma processing apparatus and method for forming films for semiconductor wafer
EP0823491B1 (en) * 1996-08-07 2002-02-27 Concept Systems Design Inc. Gas injection system for CVD reactors
US6312525B1 (en) * 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
JP4209539B2 (en) * 1999-04-21 2009-01-14 東京エレクトロン株式会社 Processing equipment
JP5025609B2 (en) * 2003-09-04 2012-09-12 株式会社日立ハイテクノロジーズ Vacuum processing equipment

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