JP2008300412A - Gas treatment apparatus - Google Patents

Gas treatment apparatus Download PDF

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JP2008300412A
JP2008300412A JP2007141908A JP2007141908A JP2008300412A JP 2008300412 A JP2008300412 A JP 2008300412A JP 2007141908 A JP2007141908 A JP 2007141908A JP 2007141908 A JP2007141908 A JP 2007141908A JP 2008300412 A JP2008300412 A JP 2008300412A
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substrate
gas
processing
gas discharge
thinner
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JP4714185B2 (en
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Masatoshi Shiraishi
雅敏 白石
Yutaka Aso
豊 麻生
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/064—Transporting devices for sheet glass in a horizontal position
    • B65G49/065—Transporting devices for sheet glass in a horizontal position supported partially or completely on fluid cushions, e.g. a gas cushion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G51/00—Conveying articles through pipes or tubes by fluid flow or pressure; Conveying articles over a flat surface, e.g. the base of a trough, by jets located in the surface
    • B65G51/02—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases
    • B65G51/03—Directly conveying the articles, e.g. slips, sheets, stockings, containers or workpieces, by flowing gases over a flat surface or in troughs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups
    • B65G2249/045—Details of suction cups suction cups

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Mechanical Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a gas treatment apparatus in which a distance from a treatment gas ejection opening to a substrate can be reduced as much as possible without inviting growth in size and complication when treatment gas is supplied to the substrate for gas treatment. <P>SOLUTION: A reflow apparatus 100 includes a carrier path 2 for carrying a substrate G, and a floating member 10 which is provided above the carrier path 2, which has a reference surface 10a in which a plurality of treatment gas ejection openings 11 and suction openings 12 are formed and which is opposed to the carrier path 2, and which supplies treatment gas to the substrate G carried in the carrier path 2 and floats the substrate G carried in the carrier path 2 using the ejection and suction of the treatment gas, a carrier mechanism 5 for carrying the substrate G along the carrier path 2, and a control unit 25 for adjusting the ejection and suction of the treatment gas of the floating member 10, thereby controlling a distance between the reference surface 10a and the substrate G. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、例えばレジストのリフロー処理等の所定の処理ガスを用いてガス処理を行うガス処理装置に関する。   The present invention relates to a gas processing apparatus that performs gas processing using a predetermined processing gas such as resist reflow processing.

例えば半導体装置の製造プロセスにおいては、所定の層が形成された基板の表面にレジスト層を形成し、所定のパターンに対応して露光処理を行った後に当該ウエハのレジスト層に形成された露光パターンを現像するという、いわゆるフォトリソグラフィ技術により所定のパターンに対応したレジストマスクが用いられる。   For example, in a manufacturing process of a semiconductor device, a resist layer is formed on the surface of a substrate on which a predetermined layer is formed, and an exposure pattern formed on the resist layer of the wafer after performing exposure processing corresponding to the predetermined pattern A resist mask corresponding to a predetermined pattern is used by developing so-called photolithography technology.

ところで、近年、半導体装置の高集積化と微細化が益々進展しており、これにともなって半導体装置の製造工程が複雑化し、必要なマスクパターンが増加し、製造コストが増加する。このため、製造コストを大幅に低減すべく、フォトリソグラフィのためのマスクパターンの形成工程を統合させて全体の工程数を短縮させることが検討されている。   By the way, in recent years, high integration and miniaturization of semiconductor devices are progressing, and accordingly, the manufacturing process of the semiconductor devices becomes complicated, the necessary mask patterns increase, and the manufacturing cost increases. For this reason, in order to significantly reduce the manufacturing cost, it has been studied to integrate the mask pattern forming process for photolithography to reduce the total number of processes.

マスクパターンの形成工程数を削減する技術として、レジストに有機溶剤を浸透させることによりレジストを軟化させ、レジストのパターン形状を変化させることによって新たなマスクパターンを形成して、フォトリソグラフィによるマスクパターンの形成工程を低減することができるリフロー処理が提案されている（例えば、特許文献１）。   As a technique for reducing the number of mask pattern formation processes, a resist is softened by infiltrating the resist with an organic solvent, and a new mask pattern is formed by changing the resist pattern shape. A reflow process capable of reducing the formation process has been proposed (for example, Patent Document 1).

このようなリフロー処理は、レジスト膜を形成した基板をシンナー雰囲気に曝すことにより行われるが、従来から、このような処理を密閉チャンバー内で行う装置が用いられている（例えば特許文献２参照）。   Such a reflow process is performed by exposing a substrate on which a resist film is formed to a thinner atmosphere. Conventionally, an apparatus for performing such a process in a sealed chamber has been used (for example, see Patent Document 2). .

このようなリフロー処理をＦＰＤ（フラットパネルディスプレイ）の薄膜トランジスタ（ＴＦＴ）の製造に適用しようとする場合、ＦＰＤ用のガラス基板が益々大型化しており、リフロー装置も大型化、複雑化の傾向にあり、コストが高いという問題がある。また、ガス吐出口と基板との間が１０ｍｍ以上離れており、シンナー吐出口からシンナーが基板に到達するまでにシンナー濃度が低下し、高い反応速度を得ることが困難である。   When such reflow processing is applied to the manufacture of thin film transistors (TFTs) for FPDs (flat panel displays), glass substrates for FPDs are becoming larger and reflow devices are becoming larger and more complex. There is a problem that the cost is high. Further, the gas discharge port and the substrate are separated from each other by 10 mm or more, and the thinner concentration decreases before the thinner reaches the substrate from the thinner discharge port, and it is difficult to obtain a high reaction rate.

このような問題は、リフロー処理に限らず、他の処理ガスによるガス処理の場合も同様に生じる。
特開２００２−３３４８３０号公報 特開２００３―１５８０５４号公報 Such a problem occurs not only in the reflow process but also in the case of a gas process using another process gas.
JP 2002-334830 A Japanese Patent Laid-Open No. 2003-158054

本発明はかかる事情に鑑みてなされたものであって、基板に処理ガスを供給してガス処理を行う際に、大型化、複雑化を招くことなく、かつ処理ガス吐出口から基板までの距離を極力小さくすることができるガス処理装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and when supplying a processing gas to a substrate to perform gas processing, the distance from the processing gas discharge port to the substrate does not increase in size and complexity. An object of the present invention is to provide a gas processing apparatus capable of reducing the size as much as possible.

上記課題を解決するため、本発明の第１の観点では、基板に処理ガスを供給して所定の処理を施すガス処理装置であって、基板を搬送する搬送路と、搬送路を搬送されている基板をガスの吐出および吸引により浮上させる浮上機構と、複数の処理ガス吐出機構を有し、前記搬送路を搬送されている基板に向けて処理ガスを吐出させる処理ガス吐出機構と、前記搬送路に沿って基板を搬送させる搬送機構と、前記浮上機構のガスの噴出および吸引を調節して基板の浮上量を制御し、前記処理ガス吐出機構の前記処理ガス吐出口と基板との間の距離を制御する制御部とを具備することを特徴とするガス処理装置を提供する。   In order to solve the above problems, according to a first aspect of the present invention, there is provided a gas processing apparatus for supplying a processing gas to a substrate and performing a predetermined process, the transport path transporting the substrate, and the transport path being transported A levitation mechanism for levitation of a substrate by gas discharge and suction, a processing gas discharge mechanism having a plurality of processing gas discharge mechanisms, and discharging a processing gas toward the substrate being transferred along the transfer path, and the transfer A transport mechanism for transporting the substrate along the path, and controlling the flying amount of the substrate by adjusting the gas ejection and suction of the floating mechanism, and between the processing gas discharge port of the processing gas discharge mechanism and the substrate And a control unit that controls the distance.

上記第１の観点において、前記浮上機構は、複数のガス吐出口および吸引口が形成され前記搬送路と対向する基準面を有する浮上部材を有し、前記搬送路を搬送されている基板は、前記基準面から所定距離浮上する構成とすることができる。前記浮上部材は前記基準面に前記処理ガス吐出機構の前記複数の処理ガス吐出口を有する構成としてもよく、この場合に、前記処理ガス吐出機構は、前記浮上部材の複数のガス吐出口を前記処理ガス吐出口として用い、基板浮上用のガスとして前記処理ガスを用いるようにしてもよい。前記浮上部材は、前記搬送路の上方に設けられている構成とすることができる。   In the first aspect, the levitation mechanism includes a levitation member having a reference surface that is formed with a plurality of gas discharge ports and suction ports and faces the conveyance path, and the substrate being conveyed through the conveyance path is: It can be configured to float a predetermined distance from the reference plane. The floating member may be configured to have the plurality of processing gas discharge ports of the processing gas discharge mechanism on the reference surface, and in this case, the processing gas discharge mechanism includes the plurality of gas discharge ports of the floating member. The processing gas may be used as a processing gas discharge port, and the processing gas may be used as a substrate floating gas. The levitation member may be provided above the conveyance path.

また、上記第１の観点において、前記処理ガス吐出機構は、前記搬送路を挟んで前記浮上部材の反対側に設けられた処理ガス吐出部材を有し、前記処理ガス吐出部材は、複数の処理ガス吐出口が形成され前記搬送路と対向する基準面を有し、前記制御部は、前記搬送路を搬送されている基板と前記処理ガス吐出部材の基準面との距離が所定距離になるように前記浮上部材による基板の浮上距離を制御する構成とすることができる。   Further, in the first aspect, the processing gas discharge mechanism includes a processing gas discharge member provided on the opposite side of the floating member across the transport path, and the processing gas discharge member includes a plurality of processes. A gas discharge port is formed and has a reference surface facing the transfer path, and the control unit is configured such that a distance between the substrate being transferred through the transfer path and the reference plane of the processing gas discharge member is a predetermined distance. In addition, the floating distance of the substrate by the floating member can be controlled.

本発明の第２の観点では、基板に処理ガスを供給して所定の処理を施すガス処理装置であって、基板を搬送する搬送路と、搬送路の上方に設けられ、複数の処理ガス吐出口および吸引口が形成され前記搬送路と対向する基準面を有し、前記搬送路を搬送されている基板に処理ガスを供給するとともに、前記搬送路を搬送されている基板を前記処理ガスの吐出および吸引により浮上させる浮上部材と、前記搬送路に沿って基板を搬送させる搬送機構と、前記浮上部材の処理ガスの吐出および吸引を調節して前記基準面と基板との距離を制御する制御部とを具備することを特徴とするガス処理装置を提供する。   According to a second aspect of the present invention, there is provided a gas processing apparatus for supplying a processing gas to a substrate and performing a predetermined processing, a transport path for transporting the substrate, a plurality of process gas discharges provided above the transport path. An outlet and a suction port are formed, have a reference surface facing the transport path, and supply processing gas to the substrate transported through the transport path, and the substrate transported through the transport path is moved to the processing gas. A floating member that floats by discharge and suction, a transport mechanism that transports the substrate along the transport path, and a control that controls the distance between the reference surface and the substrate by adjusting the discharge and suction of the processing gas of the floating member And a gas processing apparatus.

上記第１、第２の観点において、前記浮上部材は、基板の温度を調節する温度調節機構を有する構成とすることができる。また、前記処理ガスとしてシンナーを用い、基板としてレジストパターンが形成されたものを用い、シンナーによりレジストパターンのリフロー処理を行うようにすることができる。   In the first and second aspects, the levitation member may have a temperature adjustment mechanism that adjusts the temperature of the substrate. Further, a thinner can be used as the processing gas, and a resist pattern can be used as a substrate, and the resist pattern can be reflowed with the thinner.

本発明によれば、搬送路を搬送されている基板をガスの吐出および吸引により浮上させるので、基板を平坦にして極力処理ガス吐出口との距離を小さくすることができ、高い反応速度を維持することができる。また、搬送路を搬送されている基板に対して処理ガスを吐出して処理するので、大きなサイズの基板に対してもハンドリングが容易であり、装置の簡素化が可能となる。   According to the present invention, since the substrate transported in the transport path is floated by gas discharge and suction, the substrate can be flattened and the distance from the processing gas discharge port can be reduced as much as possible, and a high reaction rate can be maintained. can do. In addition, since the processing gas is discharged and processed on the substrate being transported on the transport path, handling is easy even for a large-sized substrate, and the apparatus can be simplified.

以下、添付図面を参照しつつ、本発明の実施形態について説明する。
図１は、本発明の第１の実施形態に係るリフロー装置を示す断面図である。このリフロー装置１００は、筐体１を有し、筐体１内にはガラス基板Ｇが水平に搬送される搬送路２が形成されている。筐体１の一方の側壁には基板搬入口１ａが形成され、その側壁と対向する側壁には基板搬出口１ｂが形成されていて、基板搬入口１ａから搬入されたガラス基板Ｇが搬送路２を水平に搬送され、基板搬出口１ｂから搬出されるようになっている。ガラス基板Ｇは、複数のコロ３とコロ３を駆動する駆動機構４とを有する搬送機構５により搬送路２を矢印Ａの方向へ搬送される。複数のコロ３はフレーム６で連結され、フレーム６には昇降機構７が連結されており、昇降機構７により複数のコロ３が昇降可能となっている。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view showing a reflow apparatus according to a first embodiment of the present invention. The reflow apparatus 100 includes a housing 1, and a transport path 2 through which the glass substrate G is transported horizontally is formed in the housing 1. A substrate carry-in port 1 a is formed on one side wall of the housing 1, and a substrate carry-out port 1 b is formed on the side wall opposite to the side wall, and the glass substrate G carried in from the substrate carry-in port 1 a is transferred to the transfer path 2. Are transported horizontally and unloaded from the substrate unloading port 1b. The glass substrate G is transported along the transport path 2 in the direction of arrow A by a transport mechanism 5 having a plurality of rollers 3 and a drive mechanism 4 that drives the rollers 3. The plurality of rollers 3 are connected by a frame 6, and a lifting mechanism 7 is connected to the frame 6, and the plurality of rollers 3 can be moved up and down by the lifting mechanism 7.

筐体１内の搬送路２の上方には、ガラス基板Ｇを浮上させるとともに、処理ガスである気化されたシンナーを供給するシンナー供給機構として機能する浮上部材１０が設けられている。浮上部材１０の下面は、搬送路２と対向するように水平に形成された基準面１０ａとなっており、この基準面１０ａには、処理ガスである気化されたシンナーを吐出する複数のシンナー吐出口１１と、雰囲気を吸引する複数の吸引口１２とが形成されている。これら複数のシンナー吐出口１１および吸引口１２は、基準面１０ａの全面にわたって形成されており、複数のシンナー吐出口１１と吸引口１２とは例えば図２に示すように、ライン状にかつ交互的に設けられている。   Above the conveyance path 2 in the housing 1, a floating member 10 is provided that functions as a thinner supply mechanism that floats the glass substrate G and supplies vaporized thinner that is a processing gas. The lower surface of the levitation member 10 is a reference surface 10a formed horizontally so as to face the conveyance path 2, and a plurality of thinner discharges for discharging vaporized thinner, which is a processing gas, are provided on the reference surface 10a. An outlet 11 and a plurality of suction ports 12 for sucking the atmosphere are formed. The plurality of thinner discharge ports 11 and the suction ports 12 are formed over the entire reference surface 10a. The plurality of thinner discharge ports 11 and the suction ports 12 are arranged in a line and alternately, for example, as shown in FIG. Is provided.

各シンナー吐出口１１には浮上部材１０内に形成されたシンナー供給路１３が接続されており、これらシンナー供給路１３は共通のシンナー供給配管１４に接続されていて、このシンナー供給配管１４にはシンナー供給源１５が接続されている。シンナー供給源１５は、例えば図３に示すように、液体状のシンナーＬを貯留するシンナー貯留容器１６と、シンナー貯留容器１６内のシンナーＬにバブリングガス（例えばＮ２ガス）を供給するバブリングガス供給配管１７とを有しており、シンナーＬにバブリングガスを供給することによりシンナーを気化させ、気化されたシンナーをシンナー供給配管１４に導く。バブリングガス供給配管１７には、マスフローコントローラ等の流量制御器１７ａが設けられ、これによりバブリングガスの流量を制御してシンナーの気化量、すなわち気化されたシンナーの流量を制御可能となっている。 A thinner supply path 13 formed in the floating member 10 is connected to each thinner discharge port 11, and these thinner supply paths 13 are connected to a common thinner supply pipe 14. A thinner supply source 15 is connected. For example, as shown in FIG. 3, the thinner supply source 15 includes a thinner storage container 16 that stores liquid thinner L, and a bubbling gas that supplies bubbling gas (for example, N 2 gas) to the thinner L in the thinner storage container 16. The supply pipe 17 is provided, the bubbling gas is supplied to the thinner L to vaporize the thinner, and the vaporized thinner is guided to the thinner supply pipe 14. The bubbling gas supply pipe 17 is provided with a flow rate controller 17a such as a mass flow controller, whereby the flow rate of the bubbling gas can be controlled to control the vaporization amount of the thinner, that is, the vaporized thinner flow rate.

各吸引口１２には浮上部材１０内に形成された吸引路１８が接続されており、これら吸引路１８は共通の吸引配管１９に接続されていて、この吸引配管１９には真空ポンプ等の排気装置２０が接続されている。排気装置２０により吸引口１２、吸引路１８および吸引配管１９を介して浮上部材１０の下方の雰囲気を吸引することにより、ガラス基板Ｇの浮上距離を調整するとともに、気化されたシンナーを排出するようになっている。   A suction passage 18 formed in the floating member 10 is connected to each suction port 12, and these suction passages 18 are connected to a common suction pipe 19, which is evacuated by a vacuum pump or the like. A device 20 is connected. The exhaust device 20 sucks the atmosphere below the floating member 10 through the suction port 12, the suction path 18 and the suction pipe 19, so that the flying distance of the glass substrate G is adjusted and the vaporized thinner is discharged. It has become.

シンナー供給源１５および排気装置２０は制御部２５に電気的に接続されており、制御部２５は、シンナー供給源１５からの気化されたシンナーの流量および排気装置２０による吸引量を制御して、シンナー吐出口１１からのシンナーの吐出および吸引口１２による吸引を調節し、これらのバランスによりガラス基板Ｇの浮上量、すなわち基準面１０ａとガラス基板Ｇの表面との距離を例えば５０〜１００μｍ程度の極小さい距離に制御可能となっている。この場合に、基準面１０ａとガラス基板Ｇの表面との距離は、シンナー吐出口１１とガラス基板Ｇの表面との距離に相当する。   The thinner supply source 15 and the exhaust device 20 are electrically connected to the control unit 25, and the control unit 25 controls the flow rate of vaporized thinner from the thinner supply source 15 and the suction amount by the exhaust device 20, By adjusting the discharge of the thinner from the thinner discharge port 11 and the suction by the suction port 12, the floating amount of the glass substrate G, that is, the distance between the reference surface 10a and the surface of the glass substrate G is, for example, about 50 to 100 μm. It can be controlled to an extremely small distance. In this case, the distance between the reference surface 10a and the surface of the glass substrate G corresponds to the distance between the thinner discharge port 11 and the surface of the glass substrate G.

具体的には、制御部２５は、浮上部材１０に隣接して設けられた位置センサ２４からのガラス基板Ｇの検出信号を受け取り、この検出信号に基づいて、図３に示す流量制御器１７を制御してバブリングガスの流量を制御することによってシンナー吐出口１１からの処理ガスの吐出量を制御するとともに、排気装置２０に備えられたバルブ等を制御することにより吸引口１２からの吸引量を制御し、ガラス基板Ｇの浮上距離を制御する。   Specifically, the control unit 25 receives the detection signal of the glass substrate G from the position sensor 24 provided adjacent to the floating member 10, and based on this detection signal, controls the flow rate controller 17 shown in FIG. The amount of the processing gas discharged from the thinner discharge port 11 is controlled by controlling the flow rate of the bubbling gas, and the amount of suction from the suction port 12 is controlled by controlling the valve and the like provided in the exhaust device 20. And the flying distance of the glass substrate G is controlled.

制御部２５はまた、ガラス基板Ｇの浮上距離に対応して昇降機構７に信号を送り、コロ３がガラス基板Ｇを搬送可能となるように、コロ３の上下位置を制御するようになっている。   The control unit 25 also sends a signal to the lifting mechanism 7 in accordance with the flying distance of the glass substrate G, and controls the vertical position of the roller 3 so that the roller 3 can transport the glass substrate G. Yes.

一方、浮上部材１０の上面には温調水供給配管２６および温調水排出配管２７が接続されており、これらは浮上部材１０中の温調水流路（図示せず）に繋がっている。温調水供給配管２６および温調水排出配管２７は、温調水供給源２９に接続されており、温調水は浮上部材１０に循環供給されるようになっている。温調水供給源２９内の温調水の温度および流量は上記制御部２５により制御されるようになっており、これにより、浮上部材１０の温度が制御され、浮上部材１０に近接して搬送されるガラス基板Ｇの温度が制御されるようになっている。   On the other hand, a temperature adjustment water supply pipe 26 and a temperature adjustment water discharge pipe 27 are connected to the upper surface of the levitation member 10, and these are connected to a temperature adjustment water flow path (not shown) in the levitation member 10. The temperature control water supply pipe 26 and the temperature control water discharge pipe 27 are connected to a temperature control water supply source 29, and the temperature control water is circulated and supplied to the floating member 10. The temperature and flow rate of the temperature-controlled water in the temperature-controlled water supply source 29 are controlled by the control unit 25, whereby the temperature of the levitation member 10 is controlled and conveyed close to the levitation member 10. The temperature of the glass substrate G to be applied is controlled.

なお、駆動機構４によるガラス基板Ｇの搬送速度も制御部２５により制御されるようになっている。   The transport speed of the glass substrate G by the drive mechanism 4 is also controlled by the control unit 25.

このように構成されるリフロー装置１００においては、搬送機構５によりガラス基板Ｇを搬入口１ａから筐体１内に搬入し、搬送路２に沿ってガラス基板Ｇを矢印Ａの方向へ連続的に搬送する。ガラス基板Ｇの表面には所定パターンのレジスト層が形成されており、リフロー装置１００においては、このレジスト層を軟化させて流動させ、最初のパターンとは異なるパターンとする。   In the reflow apparatus 100 configured in this way, the glass substrate G is carried into the housing 1 from the carry-in entrance 1a by the carrying mechanism 5, and the glass substrate G is continuously moved in the direction of the arrow A along the carrying path 2. Transport. A resist layer having a predetermined pattern is formed on the surface of the glass substrate G. In the reflow apparatus 100, the resist layer is softened and fluidized to have a pattern different from the initial pattern.

筐体１内に搬入されたガラス基板Ｇには、浮上部材１０のシンナー吐出口１１からシンナーが吐出される。これにより、ガラス基板Ｇ上のレジストにシンナーが浸透し、軟化・流動される。そして、リフロー処理に供された後のシンナーは吸引口１２から速やかに吸引されて排出される。   The thinner is discharged from the thinner discharge port 11 of the floating member 10 onto the glass substrate G carried into the housing 1. Thereby, the thinner penetrates into the resist on the glass substrate G, and is softened and fluidized. The thinner after being subjected to the reflow process is quickly sucked and discharged from the suction port 12.

このとき、シンナー吐出口１１からのシンナーの吐出および吸引口１２からの吸引が上述したように制御部２５に制御され、ガラス基板Ｇの浮上量が制御される。また、この際に、制御部２５により昇降機構７を制御して搬送機構５のコロ３の位置がガラス基板Ｇの浮上量に合わせて調節される。   At this time, the discharge of the thinner from the thinner discharge port 11 and the suction from the suction port 12 are controlled by the control unit 25 as described above, and the flying height of the glass substrate G is controlled. At this time, the control unit 25 controls the elevating mechanism 7 to adjust the position of the roller 3 of the transport mechanism 5 in accordance with the flying height of the glass substrate G.

この場合に、浮上部材１０の基準面１０ａには全面に複数のシンナー吐出口１１および吸引口１２が形成されているため、ガラス基板Ｇは反りのない平坦な状態として浮上量を制御可能である。このため、ガラス基板Ｇを基準面１０ａに極めて近接させることができ、５０〜１００μｍといった極小さい浮上量とすることができる。したがって、シンナー吐出口１１とガラス基板Ｇとの距離を極力小さくして、高濃度のシンナーにより極めて効率よく、短時間で均一なリフロー処理を行うことができる。   In this case, since the plurality of thinner discharge ports 11 and suction ports 12 are formed on the entire reference surface 10a of the floating member 10, the glass substrate G can be controlled in a flat state without warping. . For this reason, the glass substrate G can be brought very close to the reference surface 10a, and a very small flying height of 50 to 100 μm can be obtained. Therefore, the distance between the thinner discharge port 11 and the glass substrate G can be made as small as possible, and a uniform reflow process can be performed in a short time with a highly concentrated thinner.

また、処理ガスであるシンナーの供給および排気のための吸引を利用して、ガラス基板Ｇの浮上量を制御するのでガスの供給および排気のための機構を簡素化することができる。   In addition, since the floating amount of the glass substrate G is controlled by utilizing the suction for supplying and exhausting the thinner as the processing gas, the mechanism for supplying and exhausting the gas can be simplified.

さらに、搬送路２を搬送されているガラス基板Ｇに対してシンナーを吐出してリフロー処理するので、ガラス基板サイズが大きくてもハンドリングが容易であり、装置の簡素化が可能となる。   Furthermore, since the thinner is discharged to the glass substrate G being conveyed through the conveyance path 2 and reflow processing is performed, handling is easy even if the glass substrate size is large, and the apparatus can be simplified.

このリフロー処理に際して、温調水を流して浮上部材１０の温度を制御することにより、ガラス基板Ｇをリフロー処理に適した温度、例えば２０℃に制御する。これにより、適切なリフロー処理を行うことができる。   In this reflow process, the glass substrate G is controlled to a temperature suitable for the reflow process, for example, 20 ° C. by flowing the temperature-controlled water and controlling the temperature of the floating member 10. Thereby, an appropriate reflow process can be performed.

なお、本実施形態においては、処理ガスであるシンナーを用いてガラス基板Ｇの浮上を制御するようにしたが、ガラス基板Ｇの浮上に必要なシンナー吐出量とリフロー処理に必要なシンナー吐出量とが大きく異なる等の場合には、処理ガスであるシンナーの吐出口とガラス基板浮上のためのガス吐出口とを別個に設けるようにしてもよい。   In the present embodiment, the floating of the glass substrate G is controlled by using the thinner which is the processing gas. However, the thinner discharge amount necessary for the floating of the glass substrate G and the thinner discharge amount required for the reflow process are as follows. In the case where the difference is greatly different, a thinner discharge port as a processing gas and a gas discharge port for floating the glass substrate may be provided separately.

次に、本発明の第２の実施形態に係るリフロー装置について説明する。図４は、本発明の第２の実施形態に係るリフロー装置を示す断面図である。上記第１の実施形態では浮上部材１０がシンナー吐出部材を兼ねていたが、本実施形態では浮上部材とシンナー吐出部材とを別個に設けている。図４において図１と同じものには同じ符号を付して説明を簡略化する。   Next, a reflow apparatus according to the second embodiment of the present invention will be described. FIG. 4 is a cross-sectional view showing a reflow apparatus according to the second embodiment of the present invention. In the first embodiment, the levitation member 10 also serves as a thinner discharge member. However, in this embodiment, the levitation member and the thinner discharge member are provided separately. In FIG. 4, the same components as those in FIG.

このリフロー装置２００は、筐体１内の搬送路２の上方にシンナー吐出部材５０を設け、搬送路２の下方に浮上部材６０を設けている。   In the reflow apparatus 200, a thinner discharge member 50 is provided above the conveyance path 2 in the housing 1, and a floating member 60 is provided below the conveyance path 2.

シンナー吐出部材５０の下面は、搬送路２と対向するように水平に形成された基準面５０ａとなっており、この基準面５０ａには、処理ガスである気化されたシンナーを吐出する複数のシンナー吐出口５１が全面にわたって形成されている。シンナー吐出部材５０の内部には、シンナー拡散空間５２が形成されておりシンナー拡散空間５２から上記複数のシンナー吐出口５１に対応する位置に複数のシンナー吐出孔５３が延びている。シンナー吐出部材５０のシンナー拡散空間５２の上部にはシンナー供給配管５４が接続されており、シンナー供給配管５４にはシンナー供給源が接続されている。このシンナー供給源５５は、シンナー供給源１５と同様、例えば図３の構成を有している。   The lower surface of the thinner discharge member 50 is a reference surface 50a formed horizontally so as to face the conveyance path 2, and a plurality of thinners that discharge vaporized thinner, which is a processing gas, are disposed on the reference surface 50a. A discharge port 51 is formed over the entire surface. A thinner diffusion space 52 is formed inside the thinner discharge member 50, and a plurality of thinner discharge holes 53 extend from the thinner diffusion space 52 to positions corresponding to the plurality of thinner discharge ports 51. A thinner supply pipe 54 is connected to the upper part of the thinner diffusion space 52 of the thinner discharge member 50, and a thinner supply source is connected to the thinner supply pipe 54. This thinner supply source 55 has, for example, the configuration shown in FIG.

浮上部材６０の上面は、搬送路２と対向するように水平に形成された基準面６０ａとなっており、この基準面６０ａには、ガラス基板Ｇを浮上させるための浮上ガス、例えばエアーを吐出する複数の浮上ガス吐出口６１と、雰囲気を吸引する複数の吸引口６２とが形成されている。これら複数の浮上ガス吐出口６１および吸引口６２は、基準面６０ａの全面にわたって形成されており、第１の実施形態の複数のシンナー吐出口１１と吸引口１２と同様、例えば、ライン状にかつ交互的に設けられている。   The upper surface of the levitation member 60 is a reference surface 60a formed horizontally so as to face the conveyance path 2, and a levitation gas, for example, air for levitation of the glass substrate G is discharged onto the reference surface 60a. A plurality of floating gas discharge ports 61 and a plurality of suction ports 62 for sucking the atmosphere are formed. The plurality of floating gas discharge ports 61 and the suction ports 62 are formed over the entire reference surface 60a. Like the plurality of thinner discharge ports 11 and the suction ports 12 of the first embodiment, for example, They are provided alternately.

各浮上ガス吐出口６１には浮上部材６０内に形成された浮上ガス供給路６３が接続されており、これら浮上ガス供給路６３は共通の浮上ガス供給配管６４に接続されていて、この浮上ガス供給配管６４には浮上ガス供給源６５が接続されている。   A floating gas supply path 63 formed in the floating member 60 is connected to each floating gas discharge port 61, and these floating gas supply paths 63 are connected to a common floating gas supply pipe 64. A floating gas supply source 65 is connected to the supply pipe 64.

各吸引口６２には浮上部材６０内に形成された吸引路６８が接続されており、これら吸引路６８は共通の吸引配管６９に接続されていて、この吸引配管６９には真空ポンプ等の排気装置７０が接続されている。排気装置７０により吸引口６２、吸引路６８および吸引配管６９を介して浮上部材６０の上方の雰囲気を吸引することにより、ガラス基板Ｇの浮上距離を調整するとともに、気化されたシンナーを排出するようになっている。   A suction passage 68 formed in the floating member 60 is connected to each suction port 62, and these suction passages 68 are connected to a common suction pipe 69. The suction pipe 69 is exhausted by a vacuum pump or the like. A device 70 is connected. The exhaust device 70 sucks the atmosphere above the floating member 60 through the suction port 62, the suction path 68, and the suction pipe 69, thereby adjusting the flying distance of the glass substrate G and discharging the vaporized thinner. It has become.

浮上ガス供給源６５および排気装置７０は制御部７５に電気的に接続されており、制御部７５は、浮上ガス供給源６５からの浮上ガスの流量および排気装置７０による吸引量を制御して、浮上ガス吐出口６１からの浮上ガスの吐出および吸引口６２による吸引を調節し、これらのバランスによりガラス基板Ｇの浮上量、すなわち基準面６０ａとガラス基板Ｇの表面との距離を制御可能となっている。したがって、この距離を制御することにより、シンナー吐出口５１が形成された基準面５０ａと基板との距離を小さい距離に制御可能となっている。   The levitation gas supply source 65 and the exhaust device 70 are electrically connected to the control unit 75, and the control unit 75 controls the flow rate of the levitation gas from the levitation gas supply source 65 and the suction amount by the exhaust device 70, By adjusting the discharge of the floating gas from the floating gas discharge port 61 and the suction by the suction port 62, the floating amount of the glass substrate G, that is, the distance between the reference surface 60a and the surface of the glass substrate G can be controlled by these balances. ing. Therefore, by controlling this distance, the distance between the reference surface 50a on which the thinner discharge port 51 is formed and the substrate can be controlled to a small distance.

浮上部材６０の下面には温調水供給配管７６および温調水排出配管７７が接続されており、これらは浮上部材６０中の温調水流路（図示せず）に繋がっている。温調水供給配管７６および温調水排出配管７７は、温調水供給源７９に接続されており、温調水は浮上部材６０に循環供給されるようになっている。温調水供給源７９内の温調水の温度および流量は上記制御部７５により制御されるようになっており、これにより、浮上部材６０の温度が制御され、浮上部材６０に近接して搬送されるガラス基板Ｇの温度が制御されるようになっている。   A temperature adjustment water supply pipe 76 and a temperature adjustment water discharge pipe 77 are connected to the lower surface of the levitation member 60, and these are connected to a temperature adjustment water flow path (not shown) in the levitation member 60. The temperature adjustment water supply pipe 76 and the temperature adjustment water discharge pipe 77 are connected to a temperature adjustment water supply source 79 so that the temperature adjustment water is circulated and supplied to the floating member 60. The temperature and flow rate of the temperature-controlled water in the temperature-controlled water supply source 79 are controlled by the control unit 75, whereby the temperature of the levitation member 60 is controlled and conveyed close to the levitation member 60. The temperature of the glass substrate G to be applied is controlled.

図４には図示していないが、ガラス基板Ｇを搬送する搬送機構８０は、図５に示すように、ガラス基板Ｇの両側にそれぞれ複数設けられガラス基板Ｇの端部を吸着する複数の吸着部材８１と、吸着部材８１を支持するとともにガラス基板Ｇを搬送する一対の搬送体８２と、搬送体８２をガイドする一対のガイドレール８３と、搬送体８２を駆動する駆動機構８４と、ガイドレール８３を昇降する昇降機構８５とを有している。駆動機構８４および昇降機構８５は制御部７５により制御される。制御部７５は、ガラス基板Ｇの浮上距離に対応してガイドレール８３の上下位置を制御するようになっている。   Although not shown in FIG. 4, a plurality of transport mechanisms 80 for transporting the glass substrate G are provided on both sides of the glass substrate G as shown in FIG. A member 81, a pair of transport bodies 82 that support the suction member 81 and transport the glass substrate G, a pair of guide rails 83 that guide the transport body 82, a drive mechanism 84 that drives the transport body 82, and a guide rail And an elevating mechanism 85 for elevating and lowering 83. The drive mechanism 84 and the lifting mechanism 85 are controlled by the control unit 75. The control unit 75 controls the vertical position of the guide rail 83 corresponding to the flying distance of the glass substrate G.

このように構成されるリフロー装置２００においては、搬送機構８０によりガラス基板Ｇを搬入口１ａから筐体１内に搬入し、搬送路２に沿ってガラス基板Ｇを矢印Ａの方向へ連続的に搬送する。ガラス基板Ｇの表面には所定パターンのレジスト層が形成されており、このレジスト層のリフロー処理が施される。   In the reflow apparatus 200 configured in this way, the glass substrate G is carried into the housing 1 from the carry-in entrance 1a by the carrying mechanism 80, and the glass substrate G is continuously moved in the direction of the arrow A along the carrying path 2. Transport. A resist layer having a predetermined pattern is formed on the surface of the glass substrate G, and a reflow process of the resist layer is performed.

筐体１内に搬入されたガラス基板Ｇには、シンナー吐出部材５０のシンナー吐出口５１からシンナーが吐出される。ことにより、ガラス基板Ｇ上のレジストにシンナーが浸透し、軟化・流動される。そして、リフロー処理に供された後のシンナーは浮上部材６０の吸引口６２から速やかに吸引されて排出される。   The thinner is discharged from the thinner discharge port 51 of the thinner discharge member 50 onto the glass substrate G carried into the housing 1. As a result, the thinner penetrates into the resist on the glass substrate G, and is softened and fluidized. The thinner after being subjected to the reflow process is quickly sucked and discharged from the suction port 62 of the floating member 60.

このとき、浮上部材６０の浮上ガス吐出口６１からの浮上ガスの吐出および吸引口６２からの吸引が上述したように制御部７５に制御され、ガラス基板Ｇの浮上量が制御される。また、この際に、制御部７５により昇降機構８５を制御して搬送機構８０のガイドレール８３の位置がガラス基板Ｇの浮上量に合わせて調節される。   At this time, the discharge of the floating gas from the floating gas discharge port 61 of the floating member 60 and the suction from the suction port 62 are controlled by the control unit 75 as described above, and the floating amount of the glass substrate G is controlled. At this time, the controller 75 controls the elevating mechanism 85 to adjust the position of the guide rail 83 of the transport mechanism 80 according to the flying height of the glass substrate G.

この場合に、浮上部材６０の基準面６０ａには全面に複数の浮上ガス吐出口６１および吸引口６２が形成されているため、ガラス基板Ｇは反りのない平坦な状態として浮上量を制御可能である。このため、ガラス基板Ｇをシンナー吐出部材５０の基準面５０ａに極めて近接させることができる。このときの近接距離は、シンナー吐出部材５０の基準面５０ａに依存し、安全性の観点から第１の実施形態よりも多少大きな距離にならざるを得ないが、数ミリ程度、例えば１〜５ｍｍ程度と従来に比較すると著しく小さくすることができる。したがって、シンナー吐出口５１とガラス基板Ｇとの距離を極力小さくして、高濃度のシンナーにより極めて効率よく、短時間で均一なリフロー処理を行うことができる。   In this case, since the plurality of floating gas discharge ports 61 and suction ports 62 are formed on the entire reference surface 60a of the floating member 60, the flying height can be controlled in a flat state without warping. is there. For this reason, the glass substrate G can be brought very close to the reference surface 50 a of the thinner discharge member 50. The proximity distance at this time depends on the reference surface 50a of the thinner discharge member 50 and must be slightly larger than the first embodiment from the viewpoint of safety, but is about several millimeters, for example, 1 to 5 mm. Compared to the conventional level, it can be significantly reduced. Therefore, the distance between the thinner discharge port 51 and the glass substrate G can be made as small as possible, and a uniform reflow process can be performed in a short time with a highly concentrated thinner.

また、搬送路２を搬送されているガラス基板Ｇに対してシンナーを吐出してリフロー処理するので、ガラス基板サイズが大きくてもハンドリングが容易であり、装置の簡素化が可能となる。   Further, since thinner is discharged to the glass substrate G being conveyed through the conveyance path 2 and reflow processing is performed, handling is easy even if the glass substrate size is large, and the apparatus can be simplified.

この第２の実施形態は、第１の実施形態のような処理ガスであるシンナーを用いて浮上距離を制御することが困難な場合に有効である。   The second embodiment is effective when it is difficult to control the flying distance using the thinner that is the processing gas as in the first embodiment.

なお、本発明は上記実施形態に限定されることなく、種々変形可能である。例えば、上記実施形態では、処理ガスとしてシンナーを用いるリフロー装置を例にとって説明したが、これに限らず、例えばＨＭＤＳを用いるアドヒージョン処理のような他の処理ガスを用いるガス処理にも適用可能である。また、温度調整機構として温調水を循環させる機構を例にとって説明したが、これに限るものではなく、例えばアドヒージョン処理のような加熱制御する必要がある場合には、ヒーター等を用いることができる。さらに、基板の搬送機構としてコロ搬送およびレール搬送を例にとって説明したが、これに限るものではなく、例えばベルト搬送等他の搬送機構を採用することもできる。さらにまた、上記実施形態では基板としてＦＰＤ用のガラス基板を用いた例について示したが、半導体ウエハ等の他の基板のガス処理にも適用可能である。   In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, in the above-described embodiment, a reflow apparatus using thinner as a processing gas has been described as an example. However, the present invention is not limited thereto, and can be applied to gas processing using another processing gas such as an adhesion process using HMDS. . Further, the mechanism for circulating the temperature-controlled water as an example of the temperature adjustment mechanism has been described. However, the present invention is not limited to this, and a heater or the like can be used when heating control such as an adhesion process is required. . Furthermore, although roller conveyance and rail conveyance have been described as examples of the substrate conveyance mechanism, the present invention is not limited to this, and other conveyance mechanisms such as belt conveyance can also be adopted. Furthermore, in the above-described embodiment, an example in which a glass substrate for FPD is used as a substrate has been described.

本発明は、レジストのリフロー処理に好適である。   The present invention is suitable for resist reflow processing.

本発明の第１の実施形態に係るリフロー装置を示す断面図。Sectional drawing which shows the reflow apparatus which concerns on the 1st Embodiment of this invention. 本発明の第１の実施形態に係るリフロー装置に用いられる浮上部材の基準面に形成されたシンナー吐出口と吸引口との配置例を説明するための図。The figure for demonstrating the example of arrangement | positioning of the thinner discharge outlet and suction port which were formed in the reference plane of the floating member used for the reflow apparatus which concerns on the 1st Embodiment of this invention. 発明の第１の実施形態に係るリフロー装置に用いられるシンナー供給源を示す模式図。The schematic diagram which shows the thinner supply source used for the reflow apparatus which concerns on the 1st Embodiment of invention. 本発明の第２の実施形態に係るリフロー装置を示す断面図。Sectional drawing which shows the reflow apparatus which concerns on the 2nd Embodiment of this invention. 本発明の第２の実施形態に係るリフロー装置に用いられる搬送機構を示す断面図。Sectional drawing which shows the conveyance mechanism used for the reflow apparatus which concerns on the 2nd Embodiment of this invention.

符号の説明Explanation of symbols

１；筐体
２；搬送路
３；コロ
４；駆動機構
５，８０；搬送機構
７；昇降機構
１０，６０；浮上部材
１０ａ，５０ａ，６０ａ；基準面
１１，５１；シンナー吐出口
１２，６２；吸引口
１５，５５；シンナー供給源
２０，７０；排気装置
２５，７５；制御部
２９，７９；温調水供給源
５０；シンナー吐出部材
８１；吸着部材
８２；搬送体
８３；ガイドレール
１００，２００；リフロー装置
Ｇ；ガラス基板 DESCRIPTION OF SYMBOLS 1; Housing | casing 2; Conveyance path 3; Roller 4; Drive mechanism 5,80; Conveyance mechanism 7; Elevating mechanism 10,60; Floating member 10a, 50a, 60a; Reference surface 11,51; Thinner discharge port 12,62; Suction port 15, 55; Thinner supply source 20, 70; Exhaust device 25, 75; Control unit 29, 79; Temperature control water supply source 50; Thinner discharge member 81; Adsorption member 82; Conveyance body 83; Reflow equipment G glass substrate

Claims (9)

基板に処理ガスを供給して所定の処理を施すガス処理装置であって、
基板を搬送する搬送路と、
搬送路を搬送されている基板をガスの吐出および吸引により浮上させる浮上機構と、
複数の処理ガス吐出機構を有し、前記搬送路を搬送されている基板に向けて処理ガスを吐出させる処理ガス吐出機構と、
前記搬送路に沿って基板を搬送させる搬送機構と、
前記浮上機構のガスの吐出および吸引を調節して基板の浮上量を制御し、前記処理ガス吐出機構の前記処理ガス吐出口と基板との間の距離を制御する制御部と
を具備することを特徴とするガス処理装置。 A gas processing apparatus for supplying a processing gas to a substrate and performing a predetermined processing,
A transport path for transporting the substrate;
A levitation mechanism that levitates the substrate being conveyed through the conveyance path by gas discharge and suction;
A processing gas discharge mechanism that has a plurality of processing gas discharge mechanisms and discharges the processing gas toward the substrate being transported through the transport path;
A transport mechanism for transporting the substrate along the transport path;
A control unit that controls the floating amount of the substrate by adjusting gas discharge and suction of the floating mechanism, and controls the distance between the processing gas discharge port of the processing gas discharge mechanism and the substrate. A gas processing apparatus. 前記浮上機構は、複数のガス吐出口および吸引口が形成され前記搬送路と対向する基準面を有する浮上部材を有し、前記搬送路を搬送されている基板は、前記基準面から所定距離浮上することを特徴とする請求項１に記載のガス処理装置。   The levitation mechanism includes a levitation member having a reference surface formed with a plurality of gas discharge ports and suction ports and facing the conveyance path, and the substrate being conveyed along the conveyance path floats a predetermined distance from the reference surface. The gas processing apparatus according to claim 1, wherein: 前記浮上部材は前記基準面に前記処理ガス吐出機構の前記複数の処理ガス吐出口を有することを特徴とする請求項２に記載のガス処理装置。   The gas processing apparatus according to claim 2, wherein the floating member has the plurality of processing gas discharge ports of the processing gas discharge mechanism on the reference surface. 前記処理ガス吐出機構は、前記浮上部材の複数のガス吐出口を前記処理ガス吐出口として用い、基板浮上用のガスとして前記処理ガスを用いることを特徴とする請求項３に記載のガス処理装置。   The gas processing apparatus according to claim 3, wherein the processing gas discharge mechanism uses a plurality of gas discharge ports of the floating member as the processing gas discharge ports, and uses the processing gas as a gas for floating the substrate. . 前記浮上部材は、前記搬送路の上方に設けられていることを特徴とする請求項２から請求項４のいずれか１項に記載のガス処理装置。   The gas processing apparatus according to claim 2, wherein the levitation member is provided above the conveyance path. 前記処理ガス吐出機構は、前記搬送路を挟んで前記浮上部材の反対側に設けられた処理ガス吐出部材を有し、前記処理ガス吐出部材は、複数の処理ガス吐出口が形成され前記搬送路と対向する基準面を有し、前記制御部は、前記搬送路を搬送されている基板と前記処理ガス吐出部材の基準面との距離が所定距離になるように前記浮上部材による基板の浮上距離を制御することを特徴とする請求項２に記載のガス処理装置。   The processing gas discharge mechanism has a processing gas discharge member provided on the opposite side of the floating member across the transfer path, and the processing gas discharge member has a plurality of process gas discharge ports formed therein. The control unit is configured to lift the substrate by the floating member so that a distance between the substrate being transported on the transport path and the reference surface of the processing gas discharge member is a predetermined distance. The gas processing device according to claim 2, wherein the gas processing device is controlled. 基板に処理ガスを供給して所定の処理を施すガス処理装置であって、
基板を搬送する搬送路と、
搬送路の上方に設けられ、複数の処理ガス吐出口および吸引口が形成され前記搬送路と対向する基準面を有し、前記搬送路を搬送されている基板に処理ガスを供給するとともに、前記搬送路を搬送されている基板を前記処理ガスの吐出および吸引により浮上させる浮上部材と、
前記搬送路に沿って基板を搬送させる搬送機構と、
前記浮上部材の処理ガスの吐出および吸引を調節して前記基準面と基板との距離を制御する制御部と
を具備することを特徴とするガス処理装置。 A gas processing apparatus for supplying a processing gas to a substrate and performing a predetermined processing,
A transport path for transporting the substrate;
A plurality of process gas discharge ports and suction ports provided above the transport path, having a reference surface facing the transport path, and supplying a processing gas to a substrate transported through the transport path; A levitation member that levitates the substrate being conveyed through the conveyance path by discharging and sucking the processing gas;
A transport mechanism for transporting the substrate along the transport path;
A gas processing apparatus comprising: a control unit that controls a distance between the reference surface and the substrate by adjusting discharge and suction of the processing gas of the floating member. 前記浮上部材は、基板の温度を調節する温度調節機構を有することを特徴とする請求項２から請求項７のいずれか１項に記載のガス処理装置。   The gas processing apparatus according to claim 2, wherein the floating member includes a temperature adjustment mechanism that adjusts a temperature of the substrate. 前記処理ガスとしてシンナーを用い、基板としてレジストパターンが形成されたものを用い、シンナーによりレジストパターンのリフロー処理を行うことを特徴とする請求項１から請求項８のいずれか１項に記載のガス処理装置。   The gas according to any one of claims 1 to 8, wherein a thinner is used as the processing gas and a resist pattern is formed as a substrate, and the resist pattern is reflowed by the thinner. Processing equipment.
JP2007141908A 2007-05-29 2007-05-29 Gas processing equipment Expired - Fee Related JP4714185B2 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158054A (en) * 2001-08-28 2003-05-30 Nec Kagoshima Ltd Substrate processing system
JP2005228881A (en) * 2004-02-12 2005-08-25 Tokyo Electron Ltd Levitation substrate transfer processing method and its apparatus
JP2006164683A (en) * 2004-12-06 2006-06-22 Sharp Corp Inline type plasma processing device
JP2007073876A (en) * 2005-09-09 2007-03-22 V Technology Co Ltd Work stage and exposure device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158054A (en) * 2001-08-28 2003-05-30 Nec Kagoshima Ltd Substrate processing system
JP2005228881A (en) * 2004-02-12 2005-08-25 Tokyo Electron Ltd Levitation substrate transfer processing method and its apparatus
JP2006164683A (en) * 2004-12-06 2006-06-22 Sharp Corp Inline type plasma processing device
JP2007073876A (en) * 2005-09-09 2007-03-22 V Technology Co Ltd Work stage and exposure device

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