JP2008236017A - High frequency circuit, high frequency circuit component, and communication apparatus employing them - Google Patents

High frequency circuit, high frequency circuit component, and communication apparatus employing them Download PDF

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JP2008236017A
JP2008236017A JP2007068870A JP2007068870A JP2008236017A JP 2008236017 A JP2008236017 A JP 2008236017A JP 2007068870 A JP2007068870 A JP 2007068870A JP 2007068870 A JP2007068870 A JP 2007068870A JP 2008236017 A JP2008236017 A JP 2008236017A
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circuit
frequency
signal
terminal
reception
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Keisuke Fukamachi
啓介 深町
Shigeru Kenmochi
茂 釼持
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Proterial Ltd
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Hitachi Metals Ltd
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Priority to JP2007068870A priority Critical patent/JP2008236017A/en
Priority to EP07008138A priority patent/EP1850491A3/en
Priority to US11/738,975 priority patent/US8682258B2/en
Priority to TW96114523A priority patent/TWI472170B/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency circuit which can be shared with at least two communication systems and suitable when a low noise amplifier circuit is shared, and to provide a high frequency component and a communication apparatus employing it. <P>SOLUTION: A high frequency circuit having a common terminal to which reception signals of first and second frequency bands are inputted, a first reception terminal to which the reception signal of first frequency band is delivered, a second reception terminal to which the reception signal of second frequency band is delivered, and a low noise amplifier circuit for amplifying the reception signals of first and second frequency bands is further provided with a variable notch filter circuit connected between the common terminal and the low noise amplifier circuit and passing the signal of first frequency band when a signal of first frequency band is received but blocking the signal of the first frequency band when a signal of the second frequency band is received, and a circuit connected between the first and second reception terminals and demultiplexing the signals of the first and second frequency bands. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、電子電気機器間における無線伝送を行う無線通信装置に関し、特に少なくとも２つの通信システムに共用可能な高周波回路及びこれを用いた通信装置に関する。   The present invention relates to a wireless communication apparatus that performs wireless transmission between electronic and electrical devices, and more particularly to a high-frequency circuit that can be shared by at least two communication systems and a communication apparatus using the same.

現在、ＩＥＥＥ８０２．１１規格に代表される無線ＬＡＮによるデータ通信が広く一般化している。例えばパーソナルコンピュータ（ＰＣ）、プリンタやハードディスク、ブロードバンドなルーターなどのＰＣの周辺機器、ＦＡＸ、冷蔵庫、標準テレビ（ＳＤＴＶ）、高品位テレビ（ＨＤＴＶ）、カメラ、ビデオ、携帯電話等々の電子機器、自動車内や航空機内での有線通信に変わる信号伝達手段として採用され、それぞれの電子電気機器間において無線データ伝送が行われている。   At present, data communication using a wireless LAN represented by the IEEE 802.11 standard is widely used. For example, personal computers (PCs), PC peripherals such as printers, hard disks, broadband routers, fax machines, refrigerators, standard televisions (SDTVs), high-definition televisions (HDTVs), electronic devices such as cameras, videos, and mobile phones, automobiles It is adopted as a signal transmission means that replaces wired communication in an airplane or in an aircraft, and wireless data transmission is performed between the respective electronic and electrical devices.

無線ＬＡＮの規格として、ＩＥＥＥ８０２．１１ａは、ＯＦＤＭ（直交周波数多重分割）変調方式を用いて、最大５４Ｍｂｐｓの高速データ通信をサポートするものであり、その周波数帯域は５ＧＨｚ帯が利用される。またＩＥＥＥ８０２．１１ｂは、ＤＳＳＳ（ダイレクト・シーケンス・スペクトル拡散）方式で、５．５Ｍｂｐｓ、１１Ｍｂｐｓの高速通信をサポートするものであり、無線免許なしに自由に利用可能な、２．４ＧＨｚのＩＳＭ（産業、科学及び医療）帯域が利用される。更にＩＥＥＥ８０２．１１ｇは、ＯＦＤＭ変調方式を用いて、最大５４Ｍｂｐｓの高速データ通信をサポートするものであり、ＩＥＥＥ８０２．１１ｂと同様に２．４ＧＨｚ帯域が利用される。   As a wireless LAN standard, IEEE802.11a supports high-speed data communication of a maximum of 54 Mbps using an OFDM (Orthogonal Frequency Division Division) modulation method, and a frequency band of 5 GHz is used. IEEE802.11b is a DSSS (Direct Sequence Spread Spectrum) system that supports high-speed communication at 5.5 Mbps and 11 Mbps, and is a 2.4 GHz ISM (industrial) that can be used freely without a radio license. , Science and medical) bands. Further, IEEE802.11g supports high-speed data communication of a maximum of 54 Mbps using the OFDM modulation scheme, and uses the 2.4 GHz band as in the case of IEEE802.11b.

本発明者は、このような無線ＬＡＮを用いた通信装置、高周波回路、高周波回路部品を、既に提供している（例えば、特許文献１）。この高周波回路は、図６に示すように、高周波スイッチ回路１、第１の分波回路３、第２の分波回路２、ローパスフィルタ回路５、ローパスフィルタ回路６、第１の高周波電力増幅器８、第２の高周波電力増幅器９、第１の低雑音増幅器１７、第２の低雑音増幅器７及び検波回路１６からなり、マルチバンドアンテナ端子と高周波スイッチ回路１との間にローパスフィルタ等の高調波低減回路を設けたものである。無線ＬＡＮを用いた通信装置では、それを構成する高周波部品の実装空間は限られているため、該高周波部品およびそれに用いられる高周波回路は、高性能であることに加えて、小型であることが要求される。これに対して、特許文献１の構成により、検波ダイオードで発生する高調波信号の低減、低雑音増幅器で発生した高調波信号の低減を可能とした。   The inventor has already provided a communication device, a high-frequency circuit, and a high-frequency circuit component using such a wireless LAN (for example, Patent Document 1). As shown in FIG. 6, the high-frequency circuit includes a high-frequency switch circuit 1, a first branching circuit 3, a second branching circuit 2, a low-pass filter circuit 5, a low-pass filter circuit 6, and a first high-frequency power amplifier 8. , A second high-frequency power amplifier 9, a first low-noise amplifier 17, a second low-noise amplifier 7, and a detection circuit 16, and a harmonic such as a low-pass filter between the multiband antenna terminal and the high-frequency switch circuit 1. A reduction circuit is provided. In a communication device using a wireless LAN, the mounting space for the high-frequency components that form the communication device is limited. Therefore, the high-frequency components and the high-frequency circuits used in the communication devices may be small in addition to high performance. Required. On the other hand, the configuration of Patent Document 1 enables reduction of harmonic signals generated by the detection diode and reduction of harmonic signals generated by the low noise amplifier.

特開２００６−３０４０８１号公報JP 2006-304081 A

しかし、特許文献１に記載の構成では、回路の小型化の要求を十分に満足しているものとは言えなかった。例えば、特許文献１記載の高周波回路は、２．４ＧＨｚ帯と５ＧＨｚ帯の受信側経路に各々第１の低雑音増幅器１７と第２の低雑音増幅器７を必要としていた。高周波回路、高周波部品のコストダウンや小型化の観点から、構成素子である低雑音増幅器の使用数を低減することが望ましい。これに対して分波回路の前段に広帯域の低雑音増幅器を配置することが有効である。しかし、一の低雑音増幅器で複数の異なる周波数帯域の受信信号を増幅する構成を採用すると、周波数帯域の異なる信号が低雑音増幅器に進入し、互いに干渉して信号の歪を発生しやすくなってしまうという問題があった。   However, the configuration described in Patent Document 1 cannot be said to sufficiently satisfy the demand for circuit miniaturization. For example, the high-frequency circuit described in Patent Document 1 requires the first low-noise amplifier 17 and the second low-noise amplifier 7 in the 2.4 GHz band and 5 GHz band reception side paths, respectively. From the viewpoint of cost reduction and miniaturization of high-frequency circuits and high-frequency components, it is desirable to reduce the number of low-noise amplifiers that are constituent elements. On the other hand, it is effective to arrange a broadband low-noise amplifier in front of the branching circuit. However, if a single low-noise amplifier is used to amplify a plurality of received signals in different frequency bands, signals with different frequency bands enter the low-noise amplifier and easily interfere with each other to generate signal distortion. There was a problem that.

本発明は、かかる問題点に鑑み、少なくとも２つの通信システムで共用可能な高周波回路において、低雑音増幅回路を共用する場合に好適な構成の提供、小型かつ高性能の高周波回路、さらにはこれを用いた高周波回路部品及び通信装置の提供を目的とする。   In view of such problems, the present invention provides a configuration suitable for sharing a low-noise amplifier circuit in a high-frequency circuit that can be shared by at least two communication systems, a small and high-performance high-frequency circuit, An object is to provide a high-frequency circuit component and a communication device used.

本発明は、第１及び第２の周波数帯域の受信信号が入力される共通端子（Ｔｃｏｍ）と、前記第１の周波数帯域の受信信号が出力される第１の受信端子（Rx_a）と、前記第２の周波数帯域の受信信号が出力される第２の受信端子（Rx_b）と、前記第１及び第２の周波数帯域の受信信号を増幅する低雑音増幅回路（ＬＮＡ）とを有し、前記第１の周波数帯域の信号の受信時には前記第１の周波数帯域の信号を通過し、前記第２の周波数帯域の信号の受信時には前記第１の周波数帯域の信号を阻止する可変ノッチフィルタ回路（ＶＮＦ）が前記共通端子（Ｔｃｏｍ）と前記低雑音増幅回路（ＬＮＡ）との間に接続され、前記低雑音増幅回路（ＬＮＡ）と前記第１の受信端子（Rx_a）および前記第２の受信端子（Rx_b）との間に前記第１及び第２の周波数帯域の信号を分波する分波回路（Ｄｉｐ２）とを具備する高周波回路（２０）である。異なる周波数帯域の受信信号の増幅に対して低雑音増幅回路（ＬＮＡ）を共用することによって、高周波回路を簡略、小型化することができる。さらに、前記構成によれば、周波数帯域の異なる信号が低雑音増幅器（ＬＮＡ）に進入して、互いに干渉して信号の歪を発生することを抑制することができる。   The present invention includes a common terminal (Tcom) to which received signals in the first and second frequency bands are input, a first receiving terminal (Rx_a) from which the received signals in the first frequency band are output, A second reception terminal (Rx_b) from which a reception signal in the second frequency band is output; and a low noise amplification circuit (LNA) for amplifying the reception signals in the first and second frequency bands, A variable notch filter circuit (VNF) that passes the signal of the first frequency band when receiving a signal of the first frequency band and blocks the signal of the first frequency band when receiving the signal of the second frequency band. ) Is connected between the common terminal (Tcom) and the low noise amplifier circuit (LNA), and the low noise amplifier circuit (LNA), the first reception terminal (Rx_a), and the second reception terminal ( Rx_b) between the first and second frequencies A high-frequency circuit (20) including a demultiplexing circuit (Dip2) for demultiplexing a band signal. By sharing a low noise amplifier circuit (LNA) for amplification of received signals in different frequency bands, the high frequency circuit can be simplified and miniaturized. Furthermore, according to the above configuration, it is possible to prevent signals having different frequency bands from entering the low noise amplifier (LNA) and interfering with each other to generate signal distortion.

前記高周波回路（２０）において、送受信信号が入出力されるアンテナ端子（Ａｎｔ）と、前記アンテナ端子（Ａｎｔ）と送信信号が入力される送信端子（Tx_a，Tx_b）または受信信号が出力される受信端子（Rx_a，Rx_b）との接続を切り替える、少なくとも３つのポートを備えた高周波スイッチ回路（ＳＷ）を備え、前記高周波スイッチ回路（ＳＷ）の受信端子側のポートが、前記共通端子（Ｔｃｏｍ）に接続されるのが好ましい。   In the high-frequency circuit (20), an antenna terminal (Ant) to which transmission / reception signals are inputted / outputted, a transmission terminal (Tx_a, Tx_b) to which the antenna terminals (Ant) and transmission signals are inputted, or reception to which reception signals are outputted. A high-frequency switch circuit (SW) having at least three ports that switches connection with the terminals (Rx_a, Rx_b) is provided, and a port on the receiving terminal side of the high-frequency switch circuit (SW) is connected to the common terminal (Tcom). It is preferable to be connected.

前記高周波回路（２０）において、前記可変ノッチフィルタ回路（ＶＮＦ）は、インダクタ（Ｌ）、容量（Ｃ）、抵抗（Ｒ）、スイッチ回路（D）および前記スイッチ回路（D）へ電圧を印加する電圧端子を有することが好ましい。   In the high frequency circuit (20), the variable notch filter circuit (VNF) applies a voltage to the inductor (L), the capacitor (C), the resistor (R), the switch circuit (D), and the switch circuit (D). It is preferable to have a voltage terminal.

前記高周波回路（２０）において、前記スイッチ回路（D）がＰＩＮダイオードであることが好ましい。   In the high-frequency circuit (20), the switch circuit (D) is preferably a PIN diode.

前記高周波回路（２０）において、前記スイッチ回路（D）がＦＥＴ（電界効果型トランジスタ）であることが好ましい。   In the high-frequency circuit (20), the switch circuit (D) is preferably an FET (field effect transistor).

また、本発明は、前記高周波回路（２０）における前記可変ノッチフィルタ回路（ＶＮＦ）、前記高周波スイッチ回路（ＳＷ）、前記低雑音増幅回路（ＬＮＡ）の少なくとも一部を積層体（１０）に搭載し、残部を電極パターンにより前記積層体（１０）内に構成した高周波回路部品（３０）である。   In the present invention, at least a part of the variable notch filter circuit (VNF), the high frequency switch circuit (SW), and the low noise amplifier circuit (LNA) in the high frequency circuit (20) is mounted on the laminate (10). The remainder is a high-frequency circuit component (30) configured in the laminate (10) with an electrode pattern.

更に、本発明は、前記高周波回路（２０）あるいは前記高周波回路部品（３０）を用いた通信装置である。   Furthermore, the present invention is a communication device using the high frequency circuit (20) or the high frequency circuit component (30).

本発明によれば、少なくとも２つの通信システムに共用可能な高周波回路において、低雑音増幅回路を共用する場合に好適な構成を提供し小型かつ高性能の高周波回路、さらにはこれを用いた高周波回路部品及び通信装置を提供できる。   According to the present invention, in a high-frequency circuit that can be shared by at least two communication systems, a configuration suitable for sharing a low-noise amplifier circuit is provided, a small and high-performance high-frequency circuit, and a high-frequency circuit using the same Components and communication devices can be provided.

以下、本発明の実施態様を図面を参照して説明するが、本発明がこれに限定されるものではない。図１に、２．４ＧＨｚ帯無線ＬＡＮ（ＩＥＥＥ８０２．１１ｂおよび／またはＩＥＥＥ８０２．１１ｇ）と５ＧＨｚ帯無線ＬＡＮ（ＩＥＥＥ８０２．１１ａおよび／またはＩＥＥＥ８０２．１１ｈ）の２つの通信システムを共用可能な本発明の一実施形態の回路ブロックを示す。本発明に係る高周波回路は、第１及び第２の周波数帯域の受信信号が入力される共通端子（Ｔｃｏｍ）と、前記第１の周波数帯域の受信信号が出力される第１の受信端子（Rx_a）と、前記第２の周波数帯域の受信信号が出力される第２の受信端子（Rx_b）と、前記第１及び第２の周波数帯域の受信信号を増幅する低雑音増幅回路（ＬＮＡ）とを有する。低雑音増幅回路はローノイズアンプ回路ともいう。第１の周波数帯域を２．４ＧＨｚ帯無線ＬＡＮ、第２の周波数帯域をそれよりも周波数の高い５ＧＨｚ帯無線ＬＡＮとして以下説明する。さらに、本発明に係る高周波回路は、第１の周波数帯域の信号の受信時には第１の周波数帯域の信号を通過し、第２の周波数帯域の信号の受信時には前記第１の周波数帯域の信号を阻止する可変ノッチフィルタ回路（ＶＮＦ）が共通端子（Ｔｃｏｍ）と低雑音増幅回路（ＬＮＡ）との間に接続され、低雑音増幅回路（ＬＮＡ）と第１の受信端子（Rx_a）および第２の受信端子（Rx_b）との間に第１及び第２の周波数帯域の信号を分波する分波回路（Ｄｉｐ２）とを具備する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. FIG. 1 shows an example of the present invention that can share two communication systems of 2.4 GHz band wireless LAN (IEEE802.11b and / or IEEE802.11g) and 5 GHz band wireless LAN (IEEE802.11a and / or IEEE802.11h). The circuit block of an embodiment is shown. The high-frequency circuit according to the present invention includes a common terminal (Tcom) to which received signals in the first and second frequency bands are input, and a first receiving terminal (Rx_a) from which the received signals in the first frequency band are output. ), A second reception terminal (Rx_b) from which a reception signal in the second frequency band is output, and a low noise amplification circuit (LNA) that amplifies the reception signals in the first and second frequency bands Have. The low noise amplifier circuit is also called a low noise amplifier circuit. The first frequency band will be described below as a 2.4 GHz band wireless LAN, and the second frequency band will be described as a 5 GHz band wireless LAN having a higher frequency. Furthermore, the high-frequency circuit according to the present invention passes the signal of the first frequency band when receiving the signal of the first frequency band, and passes the signal of the first frequency band when receiving the signal of the second frequency band. A variable notch filter circuit (VNF) for blocking is connected between the common terminal (Tcom) and the low noise amplifier circuit (LNA), and the low noise amplifier circuit (LNA), the first reception terminal (Rx_a), and the second A demultiplexing circuit (Dip2) for demultiplexing signals in the first and second frequency bands is provided between the receiving terminal (Rx_b).

本発明において、外部からの制御入力によって減衰極の位置を調整できる可変ノッチフィルタ回路（ＶＮＦ）を使用する。該可変ノッチフィルタ回路（ＶＮＦ）を用いることにより、第１の周波数帯域である２.４ＧＨｚ帯の信号の受信時には該第１の周波数帯域の信号を通過し、第２の周波数帯域である５ＧＨｚ帯の信号の受信時には第１の周波数帯域である２.４ＧＨｚ帯の信号を阻止する。すなわち、本発明に係る高周波回路において、可変ノッチフィルタ回路（ＶＮＦ）は、使用する２以上の通信システムのうち一部の通信システムの信号を阻止するために用いている。かかる点が、単純に不要な高調波の低減を目的とする従来の使用形態と異なる。さらに、可変ノッチフィルタ回路（ＶＮＦ）は低雑音増幅回路（ＬＮＡ）の前段に設けられ、且つ低雑音増幅回路（ＬＮＡ）の後段、すなわち低雑音増幅回路（ＬＮＡ）と第１の受信端子（Rx_a）および第２の受信端子（Rx_b）との間に第１及び第２の周波数帯域を分波する分波回路（Ｄｉｐ２）を設けられている。２.４ＧＨｚ帯と５ＧＨｚとで低雑音増幅回路（ＬＮＡ）を共用する、かかる構成によれば、高周波回路の小型化が可能となる。かかる場合、前記構成の可変ノッチフィルタ回路（ＶＮＦ）を用いることにより、周波数帯域の異なる信号が低雑音増幅器（ＬＮＡ）に進入して、互いに干渉して信号の歪が発生することを抑制することができる。   In the present invention, a variable notch filter circuit (VNF) that can adjust the position of the attenuation pole by an external control input is used. By using the variable notch filter circuit (VNF), when the 2.4 GHz band signal as the first frequency band is received, the signal in the first frequency band is passed and the 5 GHz band as the second frequency band is passed. When receiving the signal, the 2.4 GHz band signal which is the first frequency band is blocked. That is, in the high-frequency circuit according to the present invention, the variable notch filter circuit (VNF) is used to block signals of some communication systems among two or more communication systems to be used. This point is different from the conventional usage mode for simply reducing unnecessary harmonics. Further, the variable notch filter circuit (VNF) is provided in front of the low noise amplifier circuit (LNA), and is subsequent to the low noise amplifier circuit (LNA), that is, the low noise amplifier circuit (LNA) and the first receiving terminal (Rx_a). ) And the second receiving terminal (Rx_b), a demultiplexing circuit (Dip2) for demultiplexing the first and second frequency bands is provided. According to such a configuration in which the low noise amplifier circuit (LNA) is shared between the 2.4 GHz band and the 5 GHz, the high frequency circuit can be downsized. In such a case, by using the variable notch filter circuit (VNF) having the above-described configuration, it is possible to prevent signals having different frequency bands from entering the low noise amplifier (LNA) and interfering with each other to generate signal distortion. Can do.

上記の本発明に係る構成は、受信モジュールに用いられるような受信経路を主体とする高周波回路に適用してもよいし、送信経路も備えて送受信に用いられる高周波回路に適用してもよい。図１に示す回路ブロックの高周波回路は、第１と第２の周波数帯域を選択的に用いて無線通信を行うデュアルバンド無線装置に用いられる、送受信用の高周波回路である。図１の構成では、マルチバンドアンテナに接続され、送受信信号が入出力されるアンテナ端子（Ａｎｔ）と、アンテナ端子（Ａｎｔ）と送信信号が入力される送信端子または受信信号が出力される受信端子との接続を切り替える、少なくとも３つのポートを備えた高周波スイッチ回路(ＳＷ)を備えている。高周波スイッチ回路(ＳＷ)の受信端子側のポートが、共通端子（Ｔｃｏｍ）に接続され、高周波スイッチ回路(ＳＷ)の送信端子側のポートに第１の分波回路(Ｄｉｐ１)が接続されている。高周波スイッチ回路(ＳＷ)は、ＦＥＴ（電界効果型トランジスタ）やＰＩＮダイオードで構成できる。第１の分波回路(Ｄｉｐ１)は、低周波側フィルタ回路と高周波側フィルタ回路から構成され、低周波側フィルタ回路は２．４ＧＨｚ帯無線ＬＡＮの送信信号を通過させ、５ＧＨｚ帯無線ＬＡＮの送信信号を減衰させる。一方、高周波側フィルタ回路は５ＧＨｚ帯無線ＬＡＮの送信信号を通過させ、２．４ＧＨｚ帯無線ＬＡＮの送信信号を減衰させる。   The above-described configuration according to the present invention may be applied to a high-frequency circuit mainly including a reception path such as that used in a reception module, or may be applied to a high-frequency circuit that includes a transmission path and is used for transmission / reception. The high-frequency circuit of the circuit block shown in FIG. 1 is a transmission / reception high-frequency circuit used in a dual-band wireless device that performs wireless communication selectively using the first and second frequency bands. In the configuration of FIG. 1, an antenna terminal (Ant) that is connected to a multiband antenna and receives transmission / reception signals, and an antenna terminal (Ant) and a transmission terminal that receives transmission signals or a reception terminal that outputs reception signals. A high-frequency switch circuit (SW) having at least three ports for switching the connection to is provided. The port on the receiving terminal side of the high frequency switch circuit (SW) is connected to the common terminal (Tcom), and the first branching circuit (Dip1) is connected to the port on the transmission terminal side of the high frequency switch circuit (SW). . The high-frequency switch circuit (SW) can be composed of an FET (field effect transistor) or a PIN diode. The first demultiplexing circuit (Dip1) is composed of a low-frequency filter circuit and a high-frequency filter circuit. The low-frequency filter circuit passes a 2.4 GHz band wireless LAN transmission signal and transmits a 5 GHz band wireless LAN. Attenuate the signal. On the other hand, the high frequency side filter circuit passes the transmission signal of the 5 GHz band wireless LAN and attenuates the transmission signal of the 2.4 GHz band wireless LAN.

高周波スイッチ回路（ＳＷ）と送信端子との間の回路構成は特に限定するものではない。図１の構成では、第１の分波回路(Ｄｉｐ１)の低周波側フィルタ回路に、第１の電力増幅回路(ＰＡ１)が接続され、その第1の電力増幅回路(ＰＡ１)は第1のバンドパスフィルタ回路(ＢＰＦ１)を介して２．４ＧＨｚ帯無線ＬＡＮの送信端子（Tx_b）に接続されている。ここで、バンドパスフィルタ回路(ＢＰＦ１)は、送信信号に含まれる帯域外の不要なノイズを除去する。第１の電力増幅回路(ＰＡ１)は、２．４ＧＨｚ帯無線ＬＡＮの送信側回路から入力される送信信号を増幅する。第１の分波回路(Ｄｉｐ１)の低周波側フィルタ回路は、第１の電力増幅回路(ＰＡ１)にて発生する高調波信号を減衰する作用がある。   The circuit configuration between the high frequency switch circuit (SW) and the transmission terminal is not particularly limited. In the configuration of FIG. 1, the first power amplifier circuit (PA1) is connected to the low frequency filter circuit of the first branching circuit (Dip1), and the first power amplifier circuit (PA1) is the first power amplifier circuit (PA1). It is connected to a transmission terminal (Tx_b) of the 2.4 GHz band wireless LAN through a band pass filter circuit (BPF1). Here, the bandpass filter circuit (BPF1) removes unnecessary noise outside the band included in the transmission signal. The first power amplifier circuit (PA1) amplifies a transmission signal input from a 2.4 GHz band wireless LAN transmission side circuit. The low frequency side filter circuit of the first branching circuit (Dip1) has an effect of attenuating the harmonic signal generated in the first power amplifier circuit (PA1).

第１の分波回路(Ｄｉｐ１)の高周波側フィルタ回路には、ローパスフィルタ(ＬＰＦ)を介して第２の電力増幅回路(ＰＡ２)が接続されている。さらに、第２の電力増幅回路(ＰＡ２)は第２のバンドパスフィルタ回路(ＢＰＦ２)を介して、５ＧＨｚ帯無線ＬＡＮの送信端子（Tx_a）に接続されている。   A second power amplifier circuit (PA2) is connected to the high frequency side filter circuit of the first branching circuit (Dip1) through a low pass filter (LPF). Further, the second power amplifier circuit (PA2) is connected to the transmission terminal (Tx_a) of the 5 GHz band wireless LAN via the second bandpass filter circuit (BPF2).

ここで、バンドパスフィルタ回路(ＢＰＦ２)は、送信信号に含まれる帯域外の不要なノイズを除去し、第２の電力増幅回路(ＰＡ２)は、５ＧＨｚ帯無線ＬＡＮの送信側回路から入力される送信信号を増幅する。ローパスフィルタ(ＬＰＦ)は、増幅された送信信号を通過させるが、第２の電力増幅回路(ＰＡ２)にて発生する高調波信号を減衰する作用がある。なお、必要とされる特性に応じて、図１に示す構成にフィルタ等の回路素子を追加または削除することもできる。例えば、高周波スイッチ回路（ＳＷ）と第１の分波回路（Ｄｉｐ１）の間に検波回路を設けてもよい。この検波回路は、第１の分波回路（Ｄｉｐ１）と各電力増幅回路（ＰＡ１、ＰＡ２）、とのそれぞれの間に設けることもできるが、この場合は検波回路が２つ必要になり、小型化には向いていない。また、各電力増幅回路（ＰＡ１、ＰＡ２）内に検波出力を設けることもできる。この検波回路では、カプラにより検出した送信信号を基に検波用ダイオードで高周波電力を検波し、この検出信号をＲＦＩＣ回路などを介してフィードバックし、各電力増幅回路（ＰＡ１、ＰＡ２）の制御に利用される。   Here, the band pass filter circuit (BPF2) removes unnecessary noise outside the band included in the transmission signal, and the second power amplifier circuit (PA2) is input from the transmission side circuit of the 5 GHz band wireless LAN. Amplifies the transmission signal. The low-pass filter (LPF) allows the amplified transmission signal to pass therethrough but has an effect of attenuating the harmonic signal generated by the second power amplifier circuit (PA2). Note that circuit elements such as a filter can be added to or deleted from the configuration shown in FIG. 1 according to required characteristics. For example, a detection circuit may be provided between the high frequency switch circuit (SW) and the first branching circuit (Dip1). This detection circuit can be provided between the first demultiplexing circuit (Dip1) and each of the power amplification circuits (PA1, PA2). In this case, however, two detection circuits are required, and the size of the detection circuit is small. It is not suitable for conversion. Also, a detection output can be provided in each power amplifier circuit (PA1, PA2). In this detection circuit, high-frequency power is detected by a detection diode based on the transmission signal detected by the coupler, and this detection signal is fed back via an RFIC circuit and used for controlling each power amplifier circuit (PA1, PA2). Is done.

次に、高周波回路の受信経路側を説明する。少なくとも３つのポートを備えた高周波スイッチ回路（ＳＷ）の受信端子側のポートは、共通端子（Ｔｃｏｍ）に接続される。高周波スイッチ回路（ＳＷ）として、例えばＳＰＤＴ（単極双投）スイッチを用いることが出来る。共通端子（Ｔｃｏｍ）に、第１の周波数帯域の信号の受信時には第１の周波数帯域の信号を通過し、第２の周波数帯域の信号の受信時には第１の周波数帯域の信号を阻止する可変ノッチフィルタ回路（ＶＮＦ）が接続される。可変ノッチフィルタ回路（ＶＮＦ）の後段には、第１及び第２の周波数帯域の受信信号を増幅する低雑音増幅回路（ＬＮＡ）が接続される。更に、低雑音増幅回路（ＬＮＡ）と第１の受信端子（Rx_a）および第２の受信端子（Rx_b）との間に第１及び第２の周波数帯域を分波する分波回路（Ｄｉｐ２）とを設ける。すなわち、前記構成は、異なる周波数帯域の受信信号を一の低雑音増幅器回路で増幅し、周波数毎の経路の分岐はその低雑音増幅器回路の後段で行う構成である。この低雑音増幅回路(ＬＮＡ)は、２．４ＧＨｚ帯無線ＬＡＮの受信信号並びに５ＧＨｚ帯無線ＬＡＮの受信信号を増幅する。この場合、低雑音増幅は２．４ＧＨｚ帯および５ＧＨｚ帯の無線ＬＡＮの受信信号を増幅可能なように、ゲインの周波数特性が平坦で、広帯域をカバーするものを用いる事が望ましい。かかる構成によれば、異なる周波数帯域の受信信号を一の低雑音増幅器回路で増幅できるため、高周波回路を簡略化・小型化できる。さらに、この回路構成により、高周波回路部品の小型化、低コスト化が可能であり、更には低雑音増幅回路の入力側に分波回路およびバンドパス回路を使用する必要がないので、受信感度を向上できるなどの効果が有る。   Next, the reception path side of the high frequency circuit will be described. A port on the receiving terminal side of the high-frequency switch circuit (SW) having at least three ports is connected to a common terminal (Tcom). For example, an SPDT (single pole double throw) switch can be used as the high frequency switch circuit (SW). A variable notch that passes a signal in the first frequency band when receiving a signal in the first frequency band and blocks a signal in the first frequency band when receiving a signal in the second frequency band at the common terminal (Tcom). A filter circuit (VNF) is connected. A low noise amplifier circuit (LNA) that amplifies the received signals in the first and second frequency bands is connected to the subsequent stage of the variable notch filter circuit (VNF). Further, a demultiplexing circuit (Dip2) for demultiplexing the first and second frequency bands between the low noise amplifier circuit (LNA) and the first receiving terminal (Rx_a) and the second receiving terminal (Rx_b). Is provided. In other words, the above configuration is a configuration in which received signals in different frequency bands are amplified by one low noise amplifier circuit, and a branch of a path for each frequency is performed at a subsequent stage of the low noise amplifier circuit. This low noise amplifier circuit (LNA) amplifies the reception signal of the 2.4 GHz band wireless LAN and the reception signal of the 5 GHz band wireless LAN. In this case, it is desirable to use low noise amplification that has a flat gain frequency characteristic and covers a wide band so as to amplify the reception signals of the 2.4 GHz band and 5 GHz band wireless LAN. According to such a configuration, received signals in different frequency bands can be amplified by one low noise amplifier circuit, so that the high frequency circuit can be simplified and miniaturized. In addition, this circuit configuration can reduce the size and cost of high-frequency circuit components, and further eliminates the need to use a demultiplexing circuit and a bandpass circuit on the input side of the low-noise amplifier circuit. There are effects such as improvement.

分波回路（Ｄｉｐ２）の後段には、第１の周波数帯域の受信信号が出力される第１の受信端子（Rx_a）、第２の周波数帯域の受信信号が出力される第２の受信端子（Rx_b）が設けられる。第２の分波回路(Ｄｉｐ２)は、低周波側フィルタ回路と高周波側フィルタ回路から構成され、低周波側フィルタ回路は２．４ＧＨｚ帯無線ＬＡＮの受信信号を通過させ、５ＧＨｚ帯無線ＬＡＮの受信信号を減衰させる。一方、高周波側フィルタ回路は、５ＧＨｚ帯無線ＬＡＮの受信信号を通過させ、２．４ＧＨｚ帯無線ＬＡＮの受信信号を減衰させる。この作用により低雑音増幅で増幅された信号は、第２の分波回路(Ｄｉｐ２)により分波され、２．４ＧＨｚ帯無線ＬＡＮの受信信号は第３のバンドパスフィルタ回路(ＢＰＦ３)を介して２．４ＧＨｚ帯無線ＬＡＮの受信端（Rx_b）に出力され、５ＧＨｚ帯無線ＬＡＮの受信信号は５ＧＨｚ帯無線ＬＡＮの受信端（Rx_a）に出力される。   In the subsequent stage of the demultiplexing circuit (Dip2), a first reception terminal (Rx_a) from which a reception signal in the first frequency band is output, and a second reception terminal (in which the reception signal in the second frequency band is output) Rx_b) is provided. The second demultiplexing circuit (Dip2) is composed of a low frequency side filter circuit and a high frequency side filter circuit, and the low frequency side filter circuit passes the reception signal of the 2.4 GHz band wireless LAN and receives the reception of the 5 GHz band wireless LAN. Attenuate the signal. On the other hand, the high frequency side filter circuit passes the reception signal of the 5 GHz band wireless LAN and attenuates the reception signal of the 2.4 GHz band wireless LAN. The signal amplified by low noise amplification by this action is demultiplexed by the second demultiplexing circuit (Dip2), and the reception signal of the 2.4 GHz band wireless LAN is routed through the third bandpass filter circuit (BPF3). The signal is output to the reception end (Rx_b) of the 2.4 GHz band wireless LAN, and the reception signal of the 5 GHz band wireless LAN is output to the reception end (Rx_a) of the 5 GHz band wireless LAN.

図１において、高周波スイッチ回路（ＳＷ）と低雑音増幅回路（ＬＮＡ）との間に挿入された可変ノッチフィルタ（ＶＮＦ）の働きを、図２を参照して説明する。図２において、高周波スイッチ回路（ＳＷ）と低雑音増幅回路（ＬＮＡ）との間に挿入された可変ノッチフィルタ（ＶＮＦ）は、第１の周波数帯域（ｆ１＝２．４ＧＨｚ）の受信時には第１の周波数帯域を通過し（図２（ａ））、第２の周波数帯域（ｆ２＝５ＧＨｚ）の受信時には第１の周波数帯域（ｆ１＝２．４ＧＨｚ）を阻止する（図２（ｂ））。   The operation of the variable notch filter (VNF) inserted between the high frequency switch circuit (SW) and the low noise amplifier circuit (LNA) in FIG. 1 will be described with reference to FIG. In FIG. 2, the variable notch filter (VNF) inserted between the high-frequency switch circuit (SW) and the low-noise amplifier circuit (LNA) is the first when receiving the first frequency band (f1 = 2.4 GHz). The first frequency band (f1 = 2.4 GHz) is blocked when receiving the second frequency band (f2 = 5 GHz) (FIG. 2 (b)).

図３は、可変ノッチフィルタ（ＶＮＦ）の一実施例である。可変ノッチフィルタ回路（ＶＮＦ）は、インダクタ（Ｌ）、容量（Ｃ）、抵抗（Ｒ）、スイッチ回路（Ｄ）および前記スイッチ回路へ電圧を印加する電圧端子（ＶＣ）を有する。スイッチ回路(Ｄ)は、ＦＥＴ（電界効果型トランジスタ）やＰＩＮダイオードで構成できる。ＦＥＴを使用した場合は駆動電流の低減や切り替え速度を高速化できる利点があり、ＰＩＮダイオードを使用した場合は廉価で小型パッケージ品が使用できる利点がある。図３の構成では、受信信号の経路のノードに容量（Ｃ）の一端が接続され、該容量（Ｃ）の他端にはインダクタ（Ｌ）の一端が直列に接続されている。前記インダクタ（Ｌ）の他端にはさらにスイッチ回路（Ｄ）の一端が直列に接続され、該スイッチ回路の他端は接地されている。インダクタ（Ｌ）の他端とスイッチ回路（Ｄ）の一端との間のノードには抵抗（Ｒ）の一端が接続され、該抵抗Ｒの他端は電圧端子（ＶＣ）に接続されている。電圧端子（ＶＣ）からのバイアス電圧を用いてスイッチ回路であるダイオード（Ｄ）をＯＮ／ＯＦＦ制御することにより、ノッチフィルタ回路の減衰極を調整することができる。ここで、ダイオード（Ｄ）としてＰＩＮダイオードのようなＯＦＦ時容量が０．３〜０．５ｐＦ程度に小さいものを選択するのが良い。ダイオード（Ｄ）はＯＮ時には０．１ｎＨ程度の微小なインダクタとして機能する。すなわち、図３において、例えば、コンデンサ（Ｃ）を２ｐＦ、インダクタ（Ｌ）を１ｎＨ程度の回路定数とし、ダイオード（Ｄ）をＯＮ／ＯＦＦ制御することにより、ＬＣ共振の共振周波数を変化させる。伝送特性を示すＳパラメータＳ２１は、例えば図４に示すような特性を示す。ダイオード（Ｄ）のＯＮ時には減衰極の中心周波数がｆ１（＝２．４ＧＨｚ）、ＯＦＦ時には減衰極の中心周波数がｆ１と異なるｆ２となる。従って、可変ノッチフィルタ（ＶＮＦ）は、第１の周波数帯域（２．４ＧＨｚ）の受信時には、ダイオード（Ｄ）をＯｆｆにして、第１の周波数帯域を通過させる。一方、第２の周波数帯域（ｆ２＝５ＧＨｚ）の受信時には、ダイオード（Ｄ）をＯｎにして、第１の周波数帯域（ｆ１＝２．４ＧＨｚ）を減衰させて阻止する。このように第１の周波数帯域の中心周波数を２．４ＧＨｚ、第２の周波数帯域の中心周波数を５ＧＨｚとすることによって、該周波数帯を用いるデュアルバンドの無線ＬＡＮに好適な高周波回路を提供することができる。なお、ダイオード（Ｄ）のＯＦＦ時に減衰極の中心周波数は、必ずしもがｆ２（５ＧＨｚ）である必要はないが、該構成を用いることによって周波数ｆ２の不要な信号が低雑音増幅回路に流入して第１の周波数帯域ｆ１の信号が歪むことを阻止することができる。   FIG. 3 is an example of a variable notch filter (VNF). The variable notch filter circuit (VNF) has an inductor (L), a capacitor (C), a resistor (R), a switch circuit (D), and a voltage terminal (VC) for applying a voltage to the switch circuit. The switch circuit (D) can be composed of an FET (field effect transistor) or a PIN diode. The use of an FET has the advantage that the drive current can be reduced and the switching speed can be increased, and the use of a PIN diode has the advantage that a small package product can be used at a low price. In the configuration of FIG. 3, one end of a capacitor (C) is connected to the node of the path of the received signal, and one end of an inductor (L) is connected in series to the other end of the capacitor (C). One end of a switch circuit (D) is further connected in series to the other end of the inductor (L), and the other end of the switch circuit is grounded. One end of a resistor (R) is connected to a node between the other end of the inductor (L) and one end of the switch circuit (D), and the other end of the resistor R is connected to a voltage terminal (VC). The attenuation pole of the notch filter circuit can be adjusted by ON / OFF control of the diode (D), which is a switch circuit, using the bias voltage from the voltage terminal (VC). Here, it is preferable to select a diode (D) having a small OFF-time capacitance of about 0.3 to 0.5 pF, such as a PIN diode. The diode (D) functions as a minute inductor of about 0.1 nH when ON. That is, in FIG. 3, for example, the capacitor (C) is set to a circuit constant of about 2 pF, the inductor (L) is set to about 1 nH, and the diode (D) is ON / OFF controlled to change the resonance frequency of the LC resonance. The S parameter S21 indicating the transmission characteristic indicates a characteristic as shown in FIG. 4, for example. When the diode (D) is ON, the center frequency of the attenuation pole is f1 (= 2.4 GHz), and when the diode (D) is OFF, the center frequency of the attenuation pole is f2, which is different from f1. Accordingly, when receiving the first frequency band (2.4 GHz), the variable notch filter (VNF) turns off the diode (D) and passes the first frequency band. On the other hand, when receiving the second frequency band (f2 = 5 GHz), the diode (D) is turned on to attenuate and block the first frequency band (f1 = 2.4 GHz). Thus, by setting the center frequency of the first frequency band to 2.4 GHz and the center frequency of the second frequency band to 5 GHz, a high-frequency circuit suitable for a dual-band wireless LAN using the frequency band is provided. Can do. Although the center frequency of the attenuation pole is not necessarily f2 (5 GHz) when the diode (D) is OFF, an unnecessary signal having the frequency f2 flows into the low-noise amplifier circuit by using this configuration. It is possible to prevent the signal in the first frequency band f1 from being distorted.

以上、第１の周波数帯域として中心周波数ｆ１＝２．４ＧＨｚ、第２の周波数帯域として中心周波数ｆ２＝５ＧＨｚの場合を説明したが、本発明は、これに限定されるものではなく、任意の周波数の組合せに適用できる。また、マルチバンドのみならず、トリプルバンド以上のマルチバンド通信にも適用できる。また、可変ノッチフィルタ回路（ＶＮＦ）の阻止帯域は前記２.４ＧＨｚ帯に限定されるものではない。前記第１の周波数帯域および／または第２の周波数帯域として、WiMAX に使用される２.６ＧＨｚや３.５ＧＨｚの帯域を用いることもできる。   The case where the center frequency f1 = 2.4 GHz as the first frequency band and the center frequency f2 = 5 GHz as the second frequency band has been described above. However, the present invention is not limited to this, and any frequency can be used. Applicable to any combination. Moreover, it is applicable not only to multiband but also to multiband communication of triple band or higher. The stop band of the variable notch filter circuit (VNF) is not limited to the 2.4 GHz band. As the first frequency band and / or the second frequency band, a band of 2.6 GHz or 3.5 GHz used for WiMAX may be used.

次に、本発明に係る一実施例の高周波回路を有する高周波回路部品を積層体部品（セラミック積層基板を用いた部品）として構成した場合の一実施形態を説明する。本発明に係る高周波回路部品では、高周波回路における前記可変ノッチフィルタ回路、前記高周波スイッチ回路、前記低雑音増幅回路の少なくとも一部を積層体に搭載し、残部を電極パターンにより前記積層体内に構成する。   Next, an embodiment in which a high-frequency circuit component having a high-frequency circuit according to one embodiment of the present invention is configured as a multilayer component (component using a ceramic multilayer substrate) will be described. In the high-frequency circuit component according to the present invention, at least a part of the variable notch filter circuit, the high-frequency switch circuit, and the low-noise amplifier circuit in the high-frequency circuit is mounted on the stacked body, and the remaining part is configured in the stacked body by an electrode pattern. .

図５は、本発明の高周波回路部品の一実施形態であって、積層体（１０）に搭載部品を搭載した斜視図である。可変ノッチフィルタ回路（ＶＮＦ）、高周波スイッチ回路（ＳＷ）、低雑音増幅回路（ＬＮＡ）、そして電力増幅回路（ＰＡ）を積層体（１０）に搭載する。可変ノッチフィルタ回路（ＶＮＦ）は、図３に示すように、コンデンサ（Ｃ）、インダクタ（Ｌ）、抵抗（Ｒ）、そしてダイオード（Ｄ）で構成される。図５において、これらは全てチップ部品として積層体（１０）に搭載する。   FIG. 5 is a perspective view of an embodiment of the high-frequency circuit component according to the present invention, in which the mounting component is mounted on the laminate (10). A variable notch filter circuit (VNF), a high frequency switch circuit (SW), a low noise amplifier circuit (LNA), and a power amplifier circuit (PA) are mounted on the laminate (10). As shown in FIG. 3, the variable notch filter circuit (VNF) includes a capacitor (C), an inductor (L), a resistor (R), and a diode (D). In FIG. 5, these are all mounted on the laminate (10) as chip parts.

積層体（１０）は、例えば１０００℃以下で低温焼結が可能なセラミック誘電体材料ＬＴＣＣ（Ｌｏｗ Ｔｅｍｐｅｒａｔｕｒｅ Ｃｏ‐ｆｉｒｅｄ Ｃｅｒａｍｉｃｓ）からなり、厚さが１０μｍ〜２００μｍのグリーンシートに、低抵抗率のＡｇやＣｕ等の導電ペーストを印刷して所定の電極パターンを形成し、複数のグリーンシートを適宜一体的に積層し、焼結することにより製造することが出来る。前記誘電体材料としては、例えばＡｌ、Ｓｉ、Ｓｒを主成分として、Ｔｉ、Ｂｉ、Ｃｕ、Ｍｎ、Ｎａ、Ｋを副成分とする材料や、Ａｌ、Ｓｉ、Ｓｒを主成分としてＣａ、Ｐｂ、Ｎａ、Ｋを複成分とする材料や、Ａｌ、Ｍｇ、Ｓｉ、Ｇｄを含む材料や、Ａｌ、Ｓｉ、Ｚｒ、Ｍｇを含む材料が用いられ、誘電率は５〜１５程度の材料を用いる。   The laminate (10) is made of, for example, a ceramic dielectric material LTCC (Low Temperature Co-fired Ceramics) that can be sintered at a low temperature of 1000 ° C. or less, and is formed of a low resistivity Ag on a green sheet having a thickness of 10 μm to 200 μm. It can be manufactured by printing a conductive paste such as Cu or Cu to form a predetermined electrode pattern, appropriately laminating a plurality of green sheets, and sintering. As the dielectric material, for example, Al, Si, Sr as a main component, Ti, Bi, Cu, Mn, Na, K as a subcomponent, Al, Si, Sr as a main component, Ca, Pb, A material containing Na and K as a multicomponent, a material containing Al, Mg, Si, and Gd, and a material containing Al, Si, Zr, and Mg are used, and a material having a dielectric constant of about 5 to 15 is used.

なお、セラミック誘電体材料の他に、樹脂積層基板や樹脂とセラミック誘電体粉末を混合してなる複合材料を用いてなる積層基板を用いることも可能である。また、前記セラミック基板をＨＴＣＣ（高温同時焼成セラミック）技術を用いて、誘電体材料を、Ａｌ２Ｏ３を主体とするものとし、伝送線路等をタングステンやモリブデン等の高温で焼結可能な金属導体として構成しても良い。 In addition to the ceramic dielectric material, it is also possible to use a resin multilayer substrate or a multilayer substrate made of a composite material obtained by mixing a resin and ceramic dielectric powder. Further, the ceramic substrate is made of HTCC (high temperature co-fired ceramic) technology, the dielectric material is mainly Al 2 O 3 , and the transmission line and the like can be sintered at a high temperature such as tungsten or molybdenum. You may comprise as a conductor.

積層体（１０）の内部には、図５で積層体（１０）に搭載した可変ノッチフィルタ（ＶＮＦ）、高周波スイッチ回路（ＳＷ）、低雑音増幅回路（ＬＮＡ）、および電力増幅回路（ＰＡ）以外の、図１に示したローパスフィルタ（ＬＰＦ）やバンドパスフィルタ（ＢＰＦ）を形成する。かかる回路素子を積層体（１０）の内部に形成することにより、高周波スイッチ回路（ＳＷ）、や電力増幅回路（ＰＡ）を一体化した小型の高周波部品が実現可能となる。   The laminated body (10) includes a variable notch filter (VNF), a high frequency switch circuit (SW), a low noise amplifier circuit (LNA), and a power amplifier circuit (PA) mounted on the laminated body (10) in FIG. Other than the above, the low pass filter (LPF) and the band pass filter (BPF) shown in FIG. 1 are formed. By forming such a circuit element in the laminated body (10), a small high-frequency component in which the high-frequency switch circuit (SW) and the power amplifier circuit (PA) are integrated can be realized.

本実施例のセラミック積層基板は、平面の寸法が６．５ｍｍ×５．３ｍｍであり、非常に小型に構成することができた。また、セラミック積層基板の高さは０．６ｍｍと薄く、半導体素子をベアチップ実装することにより、搭載部品及びその樹脂封止を含めても、高さ１．３ｍｍに構成することができた。すなわちこの平面寸法で７ｍｍ角以下と非常に小型化することができた。   The ceramic laminated substrate of this example had a planar dimension of 6.5 mm × 5.3 mm, and could be configured very small. Moreover, the height of the ceramic laminated substrate was as thin as 0.6 mm, and by mounting the semiconductor element by bare chip, it was possible to configure the height to 1.3 mm including the mounted components and the resin sealing thereof. That is, it was possible to reduce the size to 7 mm square or less with this planar size.

従来回路構成では２.４ＧＨｚ帯の−１５ｄＢｍの信号が低雑音増幅器に入力され、この２倍の周波数である５ＧＨｚの高調波発生量が５ＧＨｚ帯の受信端子より−３０ｄＢｍ出力され、５ＧＨｚ帯の受信信号に対する感度の劣化を招いていた。これに対して、ＶＮＦを用いた本発明を適用する事により、５ＧＨｚ帯の受信端子より出力される高調波発生量を−７０ｄＢｍまで低減する事が可能となり、受信感度の劣化を未然に防止する事が可能となった。   In the conventional circuit configuration, a signal of −15 dBm in the 2.4 GHz band is input to the low noise amplifier, and a harmonic generation amount of 5 GHz, which is twice this frequency, is output from the reception terminal in the 5 GHz band by −30 dBm and received in the 5 GHz band. The sensitivity to the signal was degraded. On the other hand, by applying the present invention using VNF, it is possible to reduce the amount of harmonics output from the receiving terminal in the 5 GHz band to -70 dBm, thereby preventing deterioration of the receiving sensitivity. Things became possible.

以上説明した高周波回路、あるいは高周波回路をセラミック積層基板で構成した高周波回路部品を、例えば２．４ＧＨｚ帯無線ＬＡＮ（ＩＥＥＥ８０２．１１ｂおよび／またはＩＥＥＥ８０２．１１ｇ）と５ＧＨｚ帯無線ＬＡＮ（ＩＥＥＥ８０２．１１ａおよび／またはＩＥＥＥ８０２．１１ｈ）の２つの通信システムを共用可能なＲＦフロントエンド回路となし、これを用いた小型のマルチバンド通信装置を実現することが出来る。通信システムは上記した周波数帯域や通信規格に限るものではなく各種通信システムに利用可能である。また、２つの通信システムだけではなく、例えば高周波スイッチ回路を更に多段に切り替える形態をとることにより、より多数の通信システムに対応可能となる。本発明に係る高周波回路または高周波回路部品を用いた通信装置としては、例えば携帯電話に代表される無線通信機器、パーソナルコンピュータ（ＰＣ）、プリンタやハードディスク、ブロードバンドルータ等のＰＣの周辺機器、ＦＡＸ、冷蔵庫、標準テレビ（ＳＤＴＶ）、高品位テレビ（ＨＤＴＶ）、カメラ、ビデオ、等の家庭内電子機器などに展開が出来る。   For example, a 2.4 GHz band wireless LAN (IEEE802.11b and / or IEEE802.11g) and a 5 GHz band wireless LAN (IEEE802.11a and / or Alternatively, an RF front-end circuit that can share two IEEE802.11h communication systems is provided, and a small multiband communication device using the RF front-end circuit can be realized. The communication system is not limited to the frequency band and communication standard described above, and can be used for various communication systems. In addition to the two communication systems, for example, by adopting a configuration in which the high-frequency switch circuit is switched in more stages, it is possible to cope with a larger number of communication systems. As a communication apparatus using the high-frequency circuit or high-frequency circuit component according to the present invention, for example, a wireless communication device represented by a mobile phone, a personal computer (PC), a peripheral device of a PC such as a printer, a hard disk, a broadband router, a FAX, It can be deployed in refrigerators, standard television (SDTV), high-definition television (HDTV), cameras, video, and other home electronic devices.

本発明の一実施例に係る高周波回路の回路ブロックである。It is a circuit block of the high frequency circuit concerning one example of the present invention. 本発明の高周波回路に用いる可変ノッチフィルタの機能を示す図である。It is a figure which shows the function of the variable notch filter used for the high frequency circuit of this invention. 本発明の高周波回路に用いる可変ノッチフィルタの回路図である。It is a circuit diagram of the variable notch filter used for the high frequency circuit of this invention. 本発明の高周波回路のＳ２１−周波数特性図である。It is S21-frequency characteristic figure of the high frequency circuit of this invention. 本発明の高周波回路部品の斜視図である。It is a perspective view of the high frequency circuit component of this invention. 従来の高周波回路の一例を示す回路ブロック図である。It is a circuit block diagram which shows an example of the conventional high frequency circuit.

符号の説明Explanation of symbols

Ａｎｔ： アンテナ端子
Ｒｘ＿ａ、Ｒｘ＿ｂ： 受信端子
Ｔｘ＿ａ、Ｔｘ＿ｂ： 送信端子
Ｔｃｏｍ： 共通端子
ＶＮＦ： 可変ノッチフィルタ回路
ＬＮＡ：低雑音増幅回路
Ｄｉｐ１，Ｄｉｐ２： 分波回路
ＳＷ： 高周波スイッチ回路
ｆ１： 第１の周波数帯域の中心周波数
ｆ２： 第２の周波数帯域の中心周波数
１０： 積層体
２０： 高周波回路
３０： 高周波回路部品 Ant: Antenna terminals Rx_a, Rx_b: Reception terminals Tx_a, Tx_b: Transmission terminal Tcom: Common terminal VNF: Variable notch filter circuit LNA: Low noise amplification circuit Dip1, Dip2: Demultiplexing circuit SW: High frequency switch circuit f1: First frequency Center frequency f2 of band: Center frequency of second frequency band 10: Laminate 20: High frequency circuit 30: High frequency circuit component

Claims (7)

第１及び第２の周波数帯域の受信信号が入力される共通端子と、
前記第１の周波数帯域の受信信号が出力される第１の受信端子と、
前記第２の周波数帯域の受信信号が出力される第２の受信端子と、
前記第１及び第２の周波数帯域の受信信号を増幅する低雑音増幅回路とを有し、
前記第１の周波数帯域の信号の受信時には前記第１の周波数帯域の信号を通過し、前記第２の周波数帯域の信号の受信時には前記第１の周波数帯域の信号を阻止する可変ノッチフィルタ回路が前記共通端子と前記低雑音増幅回路の間に接続され、
前記低雑音増幅回路と、前記第１の受信端子および前記第２の受信端子との間に前記第１及び第２の周波数帯域の信号を分波する分波回路を具備することを特徴とする高周波回路。 A common terminal to which received signals in the first and second frequency bands are input;
A first reception terminal from which a reception signal of the first frequency band is output;
A second reception terminal from which a reception signal of the second frequency band is output;
A low-noise amplifier circuit for amplifying the received signals in the first and second frequency bands,
A variable notch filter circuit that passes the signal of the first frequency band when receiving the signal of the first frequency band and blocks the signal of the first frequency band when receiving the signal of the second frequency band; Connected between the common terminal and the low-noise amplifier circuit;
A demultiplexing circuit for demultiplexing the signals of the first and second frequency bands is provided between the low noise amplifier circuit and the first receiving terminal and the second receiving terminal. High frequency circuit. 送受信信号が入出力されるアンテナ端子と、
前記アンテナ端子と送信信号が入力される送信端子または受信信号が出力される受信端子との接続を切り替える、少なくとも３つのポートを備えた高周波スイッチ回路を備え、
前記高周波スイッチ回路の受信端子側のポートが、前記共通端子に接続されていることを特徴とする請求項１に記載の高周波回路。 An antenna terminal for transmitting / receiving signals;
A high-frequency switch circuit having at least three ports for switching the connection between the antenna terminal and a transmission terminal to which a transmission signal is input or a reception terminal to which a reception signal is output;
The high frequency circuit according to claim 1, wherein a port on the receiving terminal side of the high frequency switch circuit is connected to the common terminal. 前記可変ノッチフィルタ回路は、インダクタ、容量、抵抗、スイッチ回路および前記スイッチ回路へ電圧を印加する電圧端子を有することを特徴とする請求項１または２に記載の高周波回路。   The high frequency circuit according to claim 1, wherein the variable notch filter circuit includes an inductor, a capacitor, a resistor, a switch circuit, and a voltage terminal that applies a voltage to the switch circuit. 前記スイッチ回路がＰＩＮダイオードであることを特徴とする請求項１乃至３のいずれかに記載の高周波回路。   The high-frequency circuit according to claim 1, wherein the switch circuit is a PIN diode. 前記スイッチ回路がＦＥＴであることを特徴とする請求項１乃至３のいずれかに記載の高周波回路。   The high-frequency circuit according to any one of claims 1 to 3, wherein the switch circuit is an FET. 請求項１乃至５のいずれかに記載の高周波回路における前記可変ノッチフィルタ回路、前記高周波スイッチ回路、前記低雑音増幅回路の少なくとも一部を積層体に搭載し、
残部を電極パターンにより前記積層体内に構成したことを特徴とする高周波回路部品。 At least a part of the variable notch filter circuit, the high-frequency switch circuit, and the low-noise amplifier circuit in the high-frequency circuit according to any one of claims 1 to 5 is mounted on a laminate,
A high-frequency circuit component, wherein the remaining portion is configured in the laminated body by an electrode pattern. 請求項１乃至５のいずれかに記載の高周波回路または請求項６に記載の高周波回路部品を用いたことを特徴とする通信装置。
A communication device using the high-frequency circuit according to claim 1 or the high-frequency circuit component according to claim 6.
JP2007068870A 2006-04-26 2007-03-16 High frequency circuit, high frequency circuit component, and communication apparatus employing them Pending JP2008236017A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007068870A JP2008236017A (en) 2007-03-16 2007-03-16 High frequency circuit, high frequency circuit component, and communication apparatus employing them
EP07008138A EP1850491A3 (en) 2006-04-26 2007-04-20 High-frequency circuit, high-frequency device and communications apparatus
US11/738,975 US8682258B2 (en) 2006-04-26 2007-04-23 High-frequency circuit, high-frequency device, and communication apparatus
TW96114523A TWI472170B (en) 2006-04-26 2007-04-25 High-frequency circuit, high-frequency device, and communications apparatus

Applications Claiming Priority (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011130098A (en) * 2009-12-16 2011-06-30 Toshiba Corp Information processing apparatus
CN115642927A (en) * 2022-12-15 2023-01-24 唯捷创芯(天津)电子技术股份有限公司 Radio frequency signal receiving front-end module, signal transmission control method and mobile terminal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011130098A (en) * 2009-12-16 2011-06-30 Toshiba Corp Information processing apparatus
CN115642927A (en) * 2022-12-15 2023-01-24 唯捷创芯(天津)电子技术股份有限公司 Radio frequency signal receiving front-end module, signal transmission control method and mobile terminal

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