JP2008192938A5 - - Google Patents

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Publication number
JP2008192938A5
JP2008192938A5 JP2007027413A JP2007027413A JP2008192938A5 JP 2008192938 A5 JP2008192938 A5 JP 2008192938A5 JP 2007027413 A JP2007027413 A JP 2007027413A JP 2007027413 A JP2007027413 A JP 2007027413A JP 2008192938 A5 JP2008192938 A5 JP 2008192938A5
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JP
Japan
Prior art keywords
wiring board
layer
board according
hole
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007027413A
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Japanese (ja)
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JP2008192938A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2007027413A priority Critical patent/JP2008192938A/en
Priority claimed from JP2007027413A external-priority patent/JP2008192938A/en
Publication of JP2008192938A publication Critical patent/JP2008192938A/en
Publication of JP2008192938A5 publication Critical patent/JP2008192938A5/ja
Pending legal-status Critical Current

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Claims (12)

貫通孔を有する絶縁層と、
前記絶縁層に積層され、かつ少なくとも一部が前記貫通孔を介して露出する導体層と、
前記導体層に接続され、かつ前記貫通孔の内面を覆う下地層と、
前記下地層を覆うように、少なくとも一部が前記貫通孔に形成されたビア導体と、
を備えた配線基板であって、
前記導体層と前記下地層との間には、前記導体層の金属材料と前記下地層の金属材料との金属結晶が形成されていることを特徴とする、配線基板。
An insulating layer having a through hole;
A conductor layer laminated on the insulating layer and exposed at least partially through the through hole;
An underlayer connected to the conductor layer and covering the inner surface of the through hole;
Via conductors at least partially formed in the through holes so as to cover the foundation layer;
A wiring board comprising:
A wiring substrate, wherein a metal crystal of the metal material of the conductor layer and the metal material of the base layer is formed between the conductor layer and the base layer.
前記導体層と前記下地層との間における酸化膜の厚みは、80nm以下である、請求項1に記載の配線基板。   The wiring board according to claim 1, wherein a thickness of the oxide film between the conductor layer and the base layer is 80 nm or less. 前記導体層は、銅、銀、金、アルミニウム、ニッケル、クロムのうちの少なくとも一つの金属材料を含んでおり、
前記下地層は、銅、ニッケル、クロム、チタン、タングステンおよびモリブデンのうちの少なくとも一つの金属材料を含んでいる、請求項1に記載の配線基板。
The conductor layer includes at least one metal material of copper, silver, gold, aluminum, nickel, chromium,
The wiring board according to claim 1, wherein the underlayer includes at least one metal material of copper, nickel, chromium, titanium, tungsten, and molybdenum.
前記金属結晶は、前記導体層と前記下地層との仮想界面の55%以上の領域で形成されている、請求項1に記載の配線基板。   The wiring board according to claim 1, wherein the metal crystal is formed in a region of 55% or more of a virtual interface between the conductor layer and the base layer. 前記下地層と前記ビア導体との間には、前記下地層の金属材料と前記ビア導体の金属材料との金属結晶が形成されている、請求項1に記載の配線基板。   The wiring board according to claim 1, wherein a metal crystal of a metal material of the base layer and a metal material of the via conductor is formed between the base layer and the via conductor. 前記下地層は、銅、ニッケル、クロム、チタン、タングステンおよびモリブデンのうちの少なくとも一つの金属材料を含んでおり、
前記ビア導体は、銅、銀、金、アルミニウム、ニッケルおよびクロムのうちの少なくとも一つである、請求項5に記載の配線基板。
The underlayer includes at least one metal material of copper, nickel, chromium, titanium, tungsten and molybdenum;
The wiring board according to claim 5, wherein the via conductor is at least one of copper, silver, gold, aluminum, nickel, and chromium.
前記金属結晶は、前記下地層と前記ビア導体との仮想界面の55%以上の領域で形成されている、請求項5に記載の配線基板。   The wiring board according to claim 5, wherein the metal crystal is formed in a region of 55% or more of a virtual interface between the base layer and the via conductor. 前記貫通孔の内面は、十点平均粗さRzが1μm以下である、請求項1に記載の配線基板。   The wiring board according to claim 1, wherein the inner surface of the through hole has a ten-point average roughness Rz of 1 μm or less. 前記貫通孔の内面の十点平均粗さRzは、30nm以上300nm以下である、請求項8に記載の配線基板。   The wiring board according to claim 8, wherein the ten-point average roughness Rz of the inner surface of the through hole is not less than 30 nm and not more than 300 nm. 前記絶縁層は、ポリイミド樹脂、アクリル樹脂、エポキシ樹脂、シアネート樹脂、ウレタン樹脂、テフロン(登録商標)樹脂、シリコン樹脂、ポリフェニレンエーテル樹脂、ビスマレイミドトリアジン樹脂、およびポリパラフェニレンベンズオキサゾールのうち少なくとも一つの絶縁材料を含んでおり、
前記下地層は、銅、ニッケル、クロム、チタン、タングステンおよびモリブデンのうちの少なくとも1つの金属材料を含んでいる、請求項9に記載の配線基板。
The insulating layer includes at least one of polyimide resin, acrylic resin, epoxy resin, cyanate resin, urethane resin, Teflon (registered trademark) resin, silicon resin, polyphenylene ether resin, bismaleimide triazine resin, and polyparaphenylene benzoxazole. Contains insulating material,
The wiring substrate according to claim 9, wherein the base layer includes at least one metal material of copper, nickel, chromium, titanium, tungsten, and molybdenum.
前記請求項1ないし10のいずれかに記載の配線基板と、
前記配線基板に実装された半導体素子と、
を備えていることを特徴とする、実装構造体。
The wiring board according to any one of claims 1 to 10,
A semiconductor element mounted on the wiring board;
A mounting structure characterized by comprising:
導体層が形成された絶縁層に対して、前記導体層の一部が露出するようにして貫通孔を形成する第1工程と、
前記導体層における前記貫通孔から露出する露出面および前記貫通孔の内面を覆うように下地層を形成する第2工程と、
前記下地層を覆うようにビア導体を形成する第3工程と、
を含む配線基板の製造方法であって、
前記第2工程は、前記露出面における十点平均粗さRzを1μm以下に維持した状態で行なわれることを特徴とする、配線基板の製造方法。
A first step of forming a through hole so that a part of the conductor layer is exposed with respect to the insulating layer on which the conductor layer is formed;
A second step of forming a base layer so as to cover an exposed surface exposed from the through hole in the conductor layer and an inner surface of the through hole;
A third step of forming a via conductor so as to cover the underlayer;
A method of manufacturing a wiring board including:
The method of manufacturing a wiring board, wherein the second step is performed in a state where the ten-point average roughness Rz on the exposed surface is maintained at 1 μm or less.
JP2007027413A 2007-02-06 2007-02-06 Wiring board, package structure, and manufacturing method of wiring board Pending JP2008192938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007027413A JP2008192938A (en) 2007-02-06 2007-02-06 Wiring board, package structure, and manufacturing method of wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007027413A JP2008192938A (en) 2007-02-06 2007-02-06 Wiring board, package structure, and manufacturing method of wiring board

Publications (2)

Publication Number Publication Date
JP2008192938A JP2008192938A (en) 2008-08-21
JP2008192938A5 true JP2008192938A5 (en) 2009-09-03

Family

ID=39752729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007027413A Pending JP2008192938A (en) 2007-02-06 2007-02-06 Wiring board, package structure, and manufacturing method of wiring board

Country Status (1)

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JP (1) JP2008192938A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010157590A (en) * 2008-12-26 2010-07-15 Fujifilm Corp Method for producing multilayer wiring substrate
WO2024071007A1 (en) * 2022-09-30 2024-04-04 京セラ株式会社 Wiring board and circuit structure obtained using same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10190224A (en) * 1996-12-27 1998-07-21 Ibiden Co Ltd Multilayer printed wiring board and its manufacture
JP4049554B2 (en) * 2001-06-26 2008-02-20 イビデン株式会社 Multilayer printed wiring board and method for producing multilayer printed wiring board
JP2003229668A (en) * 2002-12-16 2003-08-15 Toshiba Corp Method of manufacturing multilayered wiring board
JP2004288748A (en) * 2003-03-19 2004-10-14 Sumitomo Bakelite Co Ltd Method of manufacturing wiring board
JP2006303171A (en) * 2005-04-20 2006-11-02 Teijin Ltd Substrate for flexible printed circuit
JP4701842B2 (en) * 2005-06-02 2011-06-15 凸版印刷株式会社 Manufacturing method of semiconductor device substrate

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